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WO2003027649A1 - Detection of metals in semiconductor wafers - Google Patents

Detection of metals in semiconductor wafers Download PDF

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Publication number
WO2003027649A1
WO2003027649A1 PCT/GB2002/004295 GB0204295W WO03027649A1 WO 2003027649 A1 WO2003027649 A1 WO 2003027649A1 GB 0204295 W GB0204295 W GB 0204295W WO 03027649 A1 WO03027649 A1 WO 03027649A1
Authority
WO
WIPO (PCT)
Prior art keywords
wafer
laser
metal
electromagnetic radiation
wafers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/GB2002/004295
Other languages
French (fr)
Inventor
Gary Lewis Jones
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pure Wafer Ltd
Original Assignee
Pure Wafer Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pure Wafer Ltd filed Critical Pure Wafer Ltd
Publication of WO2003027649A1 publication Critical patent/WO2003027649A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/71—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light thermally excited
    • G01N21/718—Laser microanalysis, i.e. with formation of sample plasma
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/02—Devices for withdrawing samples
    • G01N1/22—Devices for withdrawing samples in the gaseous state
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/02—Devices for withdrawing samples
    • G01N1/04—Devices for withdrawing samples in the solid state, e.g. by cutting
    • G01N2001/045—Laser ablation; Microwave vaporisation

Definitions

  • This invention relates to a method for the detection of metals such as Copper, Boron, Phosphor and Aluminium in semiconductor wafers.
  • Semiconductor wafers comprise a substrate of semiconductor material onto which metals such as copper are deposited to form conductive pads and tracks.
  • metals such as copper are deposited to form conductive pads and tracks.
  • a disadvantage of this is that the metal can diffuse into the semiconductor substrate, thereby degrading the electrical characteristics of the semiconductor and affecting its performance. Accordingly, its desirable to be able to determine the degree of metal contamination in the substrate.
  • Number 6,140,131 discloses a method for determining the degree of metal contamination in semiconductors by x-ray analysis. A disadvantage of this method is that it is both time consuming and expensive.
  • This slurry is expensive and has to be re-used.
  • a disadvantage of this is that the slurry may contain metals from a contaminated wafer and thus there is a substantial risk that the metal contaminants will be ground into the surface of wafers which are subsequently polished. Accordingly, it is desirable to be able to determine the degree of metal contamination in a semiconductor wafer prior to the reclamation process, so that the contaminated wafers can be rejected and the contamination of slurry avoided.
  • a method of detecting one or more metals in a semiconductor wafer comprising directing a laser at the wafer to cause localised vaporisation thereof and analysing the spectral characteristics of the electromagnetic radiation emitted from the resultant plasma plume to detect for the presence of said metal (s).
  • the laser causes rapid heating of a localised area of the semiconductor wafer, causing vaporisation of the wafer material, disassociation into its atomic species, and ionisation which produces a plasma plume.
  • the excited species relax as the plasma cools and emit electromagnetic radiation at the characteristic wavelengths of the elements of the material. This radiation can be spectrally analysed to determine the concentration of the metal (s) present in the wafer.
  • the method is relatively simply and can be performed quickly and easily to give a reliable indication of the presence of the or each metal under consideration.
  • the laser only causes localised heating of the wafer and thus the method is non-destructive of the wafer.
  • the magnitude of the electromagnetic radiation at the characteristic wavelength of the or each metal is measured to determine the concentration of the metal in the wafer.
  • the magnitude of the electromagnetic radiation at the characteristic wavelength of copper is measured to determine the concentration of copper in the wafer.
  • the laser is directed adjacent an edge of the wafer in order to avoid damaging the area of the wafer on which semiconductor devices can be formed.
  • the laser is used to form a marking such as a bar code or a serial number on the wafer, the above-mentioned method being carried out at least one point during the laser marking process.
  • the laser is pulsed at one point on the wafer to cause a sequential localised vaporisation at increasing depths, the spectral characteristics of the electromagnetic radiation emitted from each resultant plasma plume being analysed in order to give an indication of the level of metal contamination at different depths of the wafer.
  • the laser is continuously directed at one point on the wafer to cause localised vaporisation at increasing depths, the spectral characteristics of the electromagnetic radiation emitted from the plasma plume is analysed at at least two points in time during the process.
  • the spectral characteristics are analysed continuously to a depth of 4-40 ⁇ m in the wafer.
  • the method is performed at more than one point on the wafer, so as to avoid the risk of the method being performed at a localised point where no metal exists.
  • the method is performed along a line extending across the wafer, with the plume being sequentially or continuously analysed along the said line.
  • the laser may be displaced or deflected.
  • the wafer may be moved or rotated relative to the laser.
  • the laser is directed at the front or rear surface of the wafer in a direction which preferably extends substantially perpendicular to the plane of the wafer.
  • the laser may be directed at a side edge of the wafer, in a direction which co-extends with the plane of the wafer.
  • Figure 1 is a plan view of an apparatus for carrying out a method in accordance with this invention for detecting metal in a semiconductor wafer
  • Figure 2 is a diagram depicting one method of movement of the laser of the apparatus of Figure 1 relative to the wafer;
  • Figure 3 is a diagram depicting an alternative method of movement of the laser of the apparatus of Figure 1 relative to the wafer.
  • a laser beam 11 is fired at a point adjacent the side edge of the front surface of the wafer 10, in a direction which extends perpendicular to the plane of wafer 10.
  • the laser beam 11 causes rapid heating of a localised area of the semiconductor wafer 10, causing the wafer material to vaporise, disassociate into its elemental species and ionise to produce a plasma plume 12, As the plasma plume 12 cools, the excited elemental species relax and emit light at their characteristic wavelengths.
  • the system has to be capable of detecting 2-15 photons radiating at the characteristic wavelength of copper.
  • the light is conducted by an optical fibre and/or lenses 13 to a prism 14 or a reflection grating, which breaks the light down into its spectral components.
  • a diffraction grating 15 is used to select the required emission wavelength (s) of the metal (s) to be detected.
  • the light passing through the diffraction grating 15 is then detected by a photomultiplier tube 16.
  • the output of the photomultiplier tube 16 is fed to a computer (not shown) to provide an indication of the level of copper and/or other metals present in the wafer 10.
  • the laser 11 may be continuously pulsed at one point on the wafer 10 and each time the pulse is produced, the depth of penetration into the wafer increases, thereby enabling the level of metal contamination at different depths to be determined.
  • the wafer can be marked with a laser and during the marking process, the plume produced by the laser can be analysed at one or more points 20, 21 to detect the level of metal contamination in the wafer.
  • the laser may be scanned across an area, as shown in Figure 3 of the drawings.
  • the present invention provides a reliable and non-destructive method of detecting the level of metal contamination in semiconductor wafers, which can be performed as a part of the process for marking serial numbers etc. on the wafer.

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  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Optics & Photonics (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)

Abstract

A method of detecting for the presence one or more metals in a semiconductor wafer (10) comprises directing a laser beam (13) at the wafer (10) to cause localised vaporisation thereof and analysing the spectral characteristics of the electromagnetic radiation emitted from the resultant plasma plume (12) to detect for the presence of the metal (s). The method is performed on wafers (10) which are to be reclaimed by the steps of removing films of foreign matter from the surface of the wafer (10) by etching and then polishing opposite sides of the wafer (10) by etching and then polishing opposite sides of the wafer in a slurry. Any metals present in the wafers are detected prior to reclamation, so that those wafers can be rejected, thereby avoiding contamination of the slurry and the resultant risk that the metal contaminants will be ground into the surface of wafers which are subsequently polished.

Description

Detection of Metals in Semiconductor Wafers
This invention relates to a method for the detection of metals such as Copper, Boron, Phosphor and Aluminium in semiconductor wafers.
Semiconductor wafers comprise a substrate of semiconductor material onto which metals such as copper are deposited to form conductive pads and tracks. A disadvantage of this is that the metal can diffuse into the semiconductor substrate, thereby degrading the electrical characteristics of the semiconductor and affecting its performance. Accordingly, its desirable to be able to determine the degree of metal contamination in the substrate. US Patent
Number 6,140,131 discloses a method for determining the degree of metal contamination in semiconductors by x-ray analysis. A disadvantage of this method is that it is both time consuming and expensive.
It is also known to determine the degree of metal contamination within a semiconductor wafer using a mass spectrometer to analyse a portion of the wafer. However, a disadvantage of this method is that the wafer has to be destroyed in order to remove a portion of the wafer for analysis. Furthermore the method is extremely time consuming.
Semiconductor wafers are expensive to produce and often many wafers are wasted, either as a result of them being used for test purposes or as a result of a fault in the manufacturing process. Accordingly, its desirable to be able to reclaim such wafers for re-use.
Our co-pending European Patent Application Number 1205 968 describes a process for reclaiming wafers in which the surface depositions including the metal tracks and pads are removed chemically. The doped semiconductor regions in the substrate are then removed by polishing using an abrasive slurry.
This slurry is expensive and has to be re-used. However, a disadvantage of this is that the slurry may contain metals from a contaminated wafer and thus there is a substantial risk that the metal contaminants will be ground into the surface of wafers which are subsequently polished. Accordingly, it is desirable to be able to determine the degree of metal contamination in a semiconductor wafer prior to the reclamation process, so that the contaminated wafers can be rejected and the contamination of slurry avoided.
It is also desirable for a company which reclaims wafers on behalf of a manufacturer to be able to prove to the manufacturer that any metal contamination in the reclaimed wafer was present prior to the wafer being reclaimed.
Accordingly, it is an object of the present invention to provide a method of detecting metals in a semiconductor wafer which is reliable and yet which can be performed quickly and easily without any of the above-mentioned problems.
In accordance with this invention, there is provided a method of detecting one or more metals in a semiconductor wafer comprising directing a laser at the wafer to cause localised vaporisation thereof and analysing the spectral characteristics of the electromagnetic radiation emitted from the resultant plasma plume to detect for the presence of said metal (s).
The laser causes rapid heating of a localised area of the semiconductor wafer, causing vaporisation of the wafer material, disassociation into its atomic species, and ionisation which produces a plasma plume. The excited species relax as the plasma cools and emit electromagnetic radiation at the characteristic wavelengths of the elements of the material. This radiation can be spectrally analysed to determine the concentration of the metal (s) present in the wafer.
The method is relatively simply and can be performed quickly and easily to give a reliable indication of the presence of the or each metal under consideration.
The laser only causes localised heating of the wafer and thus the method is non-destructive of the wafer. Preferably the magnitude of the electromagnetic radiation at the characteristic wavelength of the or each metal is measured to determine the concentration of the metal in the wafer. Preferably the magnitude of the electromagnetic radiation at the characteristic wavelength of copper is measured to determine the concentration of copper in the wafer.
Preferably the laser is directed adjacent an edge of the wafer in order to avoid damaging the area of the wafer on which semiconductor devices can be formed.
Preferably the laser is used to form a marking such as a bar code or a serial number on the wafer, the above-mentioned method being carried out at least one point during the laser marking process. In one embodiment, the laser is pulsed at one point on the wafer to cause a sequential localised vaporisation at increasing depths, the spectral characteristics of the electromagnetic radiation emitted from each resultant plasma plume being analysed in order to give an indication of the level of metal contamination at different depths of the wafer.
In an alternative embodiment, the laser is continuously directed at one point on the wafer to cause localised vaporisation at increasing depths, the spectral characteristics of the electromagnetic radiation emitted from the plasma plume is analysed at at least two points in time during the process.
Preferably the spectral characteristics are analysed continuously to a depth of 4-40μm in the wafer.
Preferably the method is performed at more than one point on the wafer, so as to avoid the risk of the method being performed at a localised point where no metal exists.
Preferably the method is performed along a line extending across the wafer, with the plume being sequentially or continuously analysed along the said line.
In order to perform the methods at different points on the wafer, the laser may be displaced or deflected. Alternatively, the wafer may be moved or rotated relative to the laser.
Preferably the laser is directed at the front or rear surface of the wafer in a direction which preferably extends substantially perpendicular to the plane of the wafer.
Alternatively, the laser may be directed at a side edge of the wafer, in a direction which co-extends with the plane of the wafer.
An embodiment of this invention will now be described by way of example only and with reference to the accompanying drawings, in which:
Figure 1 is a plan view of an apparatus for carrying out a method in accordance with this invention for detecting metal in a semiconductor wafer; Figure 2 is a diagram depicting one method of movement of the laser of the apparatus of Figure 1 relative to the wafer; and
Figure 3 is a diagram depicting an alternative method of movement of the laser of the apparatus of Figure 1 relative to the wafer.
Referring to Figure 1 of the drawings, there is shown a semiconductor wafer 10. In order to detect the level of copper or other metals in the wafer 10, a laser beam 11 is fired at a point adjacent the side edge of the front surface of the wafer 10, in a direction which extends perpendicular to the plane of wafer 10. The laser beam 11 causes rapid heating of a localised area of the semiconductor wafer 10, causing the wafer material to vaporise, disassociate into its elemental species and ionise to produce a plasma plume 12, As the plasma plume 12 cools, the excited elemental species relax and emit light at their characteristic wavelengths.
In the case of copper, as little as 5-15 parts per billion can affect the electrical characteristics of the wafer and thus the system has to be capable of detecting 2-15 photons radiating at the characteristic wavelength of copper. In order to analyse the plume 12, the light is conducted by an optical fibre and/or lenses 13 to a prism 14 or a reflection grating, which breaks the light down into its spectral components. A diffraction grating 15 is used to select the required emission wavelength (s) of the metal (s) to be detected. The light passing through the diffraction grating 15 is then detected by a photomultiplier tube 16. The output of the photomultiplier tube 16 is fed to a computer (not shown) to provide an indication of the level of copper and/or other metals present in the wafer 10.
The laser 11 may be continuously pulsed at one point on the wafer 10 and each time the pulse is produced, the depth of penetration into the wafer increases, thereby enabling the level of metal contamination at different depths to be determined.
Referring to Figure 2 of the drawings, it is often desirable to be able to mark the wafer with a serial number or bar code around its edge. In order to achieve this, the wafer can be marked with a laser and during the marking process, the plume produced by the laser can be analysed at one or more points 20, 21 to detect the level of metal contamination in the wafer.
In order to ensure that the method is not carried out on an isolated point of wafer 10 comprising little or no metal contamination, the laser may be scanned across an area, as shown in Figure 3 of the drawings.
It will be appreciated that the present invention provides a reliable and non-destructive method of detecting the level of metal contamination in semiconductor wafers, which can be performed as a part of the process for marking serial numbers etc. on the wafer.

Claims

Claims
1. A method of detecting one or more metals in a semiconductor wafer comprising directing a laser at the wafer to cause localised vaporisation thereof and analysing the spectral characteristics of the electromagnetic radiation emitted from the resultant plasma plume to detect for the presence of said metal (s) .
2. A method as claimed in claim 1, in which the magnitude of the electromagnetic radiation at the characteristic wavelength of the or each metal is measured to determine the concentration of the metal in the wafer.
3. A method as claimed in claim 2, in which the magnitude of the electromagnetic radiation at the characteristic wavelength of copper is measured to determine the concentration of copper in the wafer.
4. A method as claimed in any preceding claim, in which the laser is directed adjacent an edge of the wafer
5. A method as claimed in any preceding claim, which is performed whilst the laser is forming a visible marking on the wafer.
6. A method as claimed in any preceding claim, in which the laser is pulsed at one point on the wafer, the spectral characteristics of the electromagnetic radiation emitted from each resultant plasma plume being analysed in order to give an indication of the level of metal contamination at different depths of penetration into the wafer.
7. A method as claimed in any preceding claim, in which the laser is continuously directed at one point on the wafer to cause localised vaporisation at increasing depths, the spectral characteristics of the electromagnetic radiation emitted from the plasma plume being analysed at at least two points in time during the process
8. A method as claimed in claim 7, in which the spectral characteristics are analysed continuously to a depth of 4-40μm in the wafer.
9. A method as claimed in any preceding claim, which is performed at more than one point on the wafer.
10. A method as claimed in claim 9, which is performed along a line extending across the wafer, with the plume being sequentially or continuously analysed along the said line.
11. A method as claimed in claims 9 or 10, in which the laser is displaced or deflected to move between the points.
12. A method as claimed in claims 9 or 10, in which the wafer is moved or rotated relative to the laser to move between the points.
13. A method as claimed in any preceding claim, in which the laser is directed at the front or rear surface of the wafer in a direction which preferably extends substantially perpendicular to the plane of the wafer.
14. A method as claimed in any of claims 1 to 12, in which the laser is directed at a side edge of the wafer, in a direction which co-extends with the plane of the wafer.
PCT/GB2002/004295 2001-09-24 2002-09-19 Detection of metals in semiconductor wafers Ceased WO2003027649A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0122932.7 2001-09-24
GB0122932A GB2384303A (en) 2001-09-24 2001-09-24 Detection of metals in semiconductor wafers

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WO2003027649A1 true WO2003027649A1 (en) 2003-04-03

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WO (1) WO2003027649A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008090535A1 (en) * 2007-01-22 2008-07-31 Soreq Nuclear Research Center Remote detection of vapour with enhancement of evaporation by heating

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JPH09243535A (en) * 1996-03-07 1997-09-19 Hitachi Ltd Pollution analysis method and device
ES2134164A1 (en) * 1997-12-10 1999-09-16 Univ Malaga Computerised analysis method using spectroscopy of plasmas produced by laser for quality control of solar cells

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US5847825A (en) * 1996-09-25 1998-12-08 Board Of Regents University Of Nebraska Lincoln Apparatus and method for detection and concentration measurement of trace metals using laser induced breakdown spectroscopy
GB9803932D0 (en) * 1998-02-26 1998-04-22 Matra Bae Dynamics Uk Ltd Apparatus for the investigation of surface chemistry

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JPH09243535A (en) * 1996-03-07 1997-09-19 Hitachi Ltd Pollution analysis method and device
ES2134164A1 (en) * 1997-12-10 1999-09-16 Univ Malaga Computerised analysis method using spectroscopy of plasmas produced by laser for quality control of solar cells

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KOCH J ET AL: "Industrial and environmental analysis by diode laser atomic absorption spectrometry", TRENDS IN OPTICS AND PHOTONICS. LASER APPLICATIONS TO CHEMICAL AND ENVIRONMENTAL ANALYSIS. VOL.36. TECHNICAL DIGEST POSTCONFERENCE EDITION, TRENDS IN OPTICS AND PHOTONICS. LASER APPLICATIONS TO CHEMICAL AND ENVIRONMENTAL ANALYSIS. VOL.36. TECHNICAL D, 2000, Washington, DC, USA, Opt. Soc. America, USA, pages 156 - 158, XP001121409, ISBN: 1-55752-626-5 *
MATSUO Y ET AL: "Formation and laser-induced-fluorescence study of SiO/sup +/ ions produced by laser ablation of Si in oxygen gas", APPLIED PHYSICS LETTERS, 25 AUG. 1997, AIP, USA, vol. 71, no. 8, pages 996 - 998, XP001121407, ISSN: 0003-6951 *
MATSUO Y ET AL: "Laser spectroscopy of molecular ions produced by laser ablation of refractory materials", RIKEN REVIEW, AUG. 1997, INST. PHYS. CHEM. RES. (RIKEN), JAPAN, no. 15, pages 79 - 80, XP009002404, ISSN: 0919-3405 *
MILAN M ET AL: "DEPTH PROFILING OF PHOSPHORUS IN PHOTONIC-GRADE SILICON USING LASER-INDUCED BREAKDOWN SPECTROMETRY", APPLIED SPECTROSCOPY, THE SOCIETY FOR APPLIED SPECTROSCOPY. BALTIMORE, US, vol. 52, no. 3, 1 March 1998 (1998-03-01), pages 444 - 448, XP000776177, ISSN: 0003-7028 *
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008090535A1 (en) * 2007-01-22 2008-07-31 Soreq Nuclear Research Center Remote detection of vapour with enhancement of evaporation by heating

Also Published As

Publication number Publication date
TW544750B (en) 2003-08-01
GB0122932D0 (en) 2001-11-14
GB2384303A (en) 2003-07-23

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