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WO2003026023A3 - Synthese de couches, de revetements ou de films par limitation de la pression exercee sur une couche de precurseur - Google Patents

Synthese de couches, de revetements ou de films par limitation de la pression exercee sur une couche de precurseur Download PDF

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Publication number
WO2003026023A3
WO2003026023A3 PCT/US2002/029605 US0229605W WO03026023A3 WO 2003026023 A3 WO2003026023 A3 WO 2003026023A3 US 0229605 W US0229605 W US 0229605W WO 03026023 A3 WO03026023 A3 WO 03026023A3
Authority
WO
WIPO (PCT)
Prior art keywords
layers
coatings
films
synthesis
exerted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2002/029605
Other languages
English (en)
Other versions
WO2003026023A2 (fr
Inventor
Billy J Stanbery
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HelioVolt Corp
Original Assignee
HelioVolt Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/957,132 external-priority patent/US6500733B1/en
Priority claimed from US09/957,121 external-priority patent/US6559372B2/en
Priority claimed from US09/957,125 external-priority patent/US6787012B2/en
Priority claimed from US09/957,207 external-priority patent/US6593213B2/en
Priority claimed from US09/957,123 external-priority patent/US6881647B2/en
Priority claimed from US09/957,050 external-priority patent/US6736986B2/en
Priority to AU2002326953A priority Critical patent/AU2002326953A1/en
Priority to EP20020761712 priority patent/EP1470594A2/fr
Application filed by HelioVolt Corp filed Critical HelioVolt Corp
Publication of WO2003026023A2 publication Critical patent/WO2003026023A2/fr
Anticipated expiration legal-status Critical
Publication of WO2003026023A3 publication Critical patent/WO2003026023A3/fr
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0005—Separation of the coating from the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0623—Sulfides, selenides or tellurides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/305—Sulfides, selenides, or tellurides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/139—Manufacture or treatment of devices covered by this subclass using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1698—Thin semiconductor films on metallic or insulating substrates the metallic or insulating substrates being flexible
    • H10F77/1699—Thin semiconductor films on metallic or insulating substrates the metallic or insulating substrates being flexible the films including Group I-III-VI materials, e.g. CIS or CIGS on metal foils or polymer foils
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Laminated Bodies (AREA)
  • Recrystallisation Techniques (AREA)
  • Chemical Vapour Deposition (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Physical Vapour Deposition (AREA)
  • Coating Apparatus (AREA)

Abstract

L'invention concerne des systèmes et des procédés de synthèse de films, de revêtements ou de couches par limitation de la pression exercée sur un précurseur. Ledit procédé consiste à exercer une pression entre une première couche de précurseur (350) couplée à un premier substrat (310) et une seconde couche de précurseur (350) couplée à un second substrat (340); à former une couche de composition (360); et à déplacer le premier substrat (310) par rapport au second (340), la couche de composition (360) restant couplée audit second substrat (340).
PCT/US2002/029605 2001-09-20 2002-09-19 Synthese de couches, de revetements ou de films par limitation de la pression exercee sur une couche de precurseur Ceased WO2003026023A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
AU2002326953A AU2002326953A1 (en) 2001-09-20 2002-09-19 Synthesis of layers, coatings or films using pressure containment exerted on precursor layers
EP20020761712 EP1470594A2 (fr) 2001-09-20 2002-09-19 Synthese de couches, de revetements ou de films par limitation de la pression exercee sur une couche de precurseur

Applications Claiming Priority (12)

Application Number Priority Date Filing Date Title
US09/957,125 2001-09-20
US09/957,121 2001-09-20
US09/957,121 US6559372B2 (en) 2001-09-20 2001-09-20 Photovoltaic devices and compositions for use therein
US09/957,125 US6787012B2 (en) 2001-09-20 2001-09-20 Apparatus for the synthesis of layers, coatings or films
US09/957,207 US6593213B2 (en) 2001-09-20 2001-09-20 Synthesis of layers, coatings or films using electrostatic fields
US09/957,123 US6881647B2 (en) 2001-09-20 2001-09-20 Synthesis of layers, coatings or films using templates
US09/957,123 2001-09-20
US09/957,132 US6500733B1 (en) 2001-09-20 2001-09-20 Synthesis of layers, coatings or films using precursor layer exerted pressure containment
US09/957,132 2001-09-20
US09/957,050 2001-09-20
US09/957,207 2001-09-20
US09/957,050 US6736986B2 (en) 2001-09-20 2001-09-20 Chemical synthesis of layers, coatings or films using surfactants

Publications (2)

Publication Number Publication Date
WO2003026023A2 WO2003026023A2 (fr) 2003-03-27
WO2003026023A3 true WO2003026023A3 (fr) 2004-04-15

Family

ID=27560353

Family Applications (6)

Application Number Title Priority Date Filing Date
PCT/US2002/029701 Ceased WO2003026026A2 (fr) 2001-09-20 2002-09-18 Synthese de couches, de revetements ou de films au moyen de champs electrostatiques
PCT/US2002/029529 Ceased WO2003026022A2 (fr) 2001-09-20 2002-09-18 Synthese de couches et de revetements a l'aide d'agents tensioactifs
PCT/US2002/029684 Ceased WO2003026028A2 (fr) 2001-09-20 2002-09-18 Appareil de synthese de couches, de revetements ou de films
PCT/US2002/029605 Ceased WO2003026023A2 (fr) 2001-09-20 2002-09-19 Synthese de couches, de revetements ou de films par limitation de la pression exercee sur une couche de precurseur
PCT/US2002/029607 Ceased WO2003026024A2 (fr) 2001-09-20 2002-09-19 Dispositifs photovoltaiques et compositions utilisees dans ces dispositifs
PCT/US2002/029608 Ceased WO2003026025A2 (fr) 2001-09-20 2002-09-19 Synthese de couches, de revetements ou de films au moyen d'une couche de collecte

Family Applications Before (3)

Application Number Title Priority Date Filing Date
PCT/US2002/029701 Ceased WO2003026026A2 (fr) 2001-09-20 2002-09-18 Synthese de couches, de revetements ou de films au moyen de champs electrostatiques
PCT/US2002/029529 Ceased WO2003026022A2 (fr) 2001-09-20 2002-09-18 Synthese de couches et de revetements a l'aide d'agents tensioactifs
PCT/US2002/029684 Ceased WO2003026028A2 (fr) 2001-09-20 2002-09-18 Appareil de synthese de couches, de revetements ou de films

Family Applications After (2)

Application Number Title Priority Date Filing Date
PCT/US2002/029607 Ceased WO2003026024A2 (fr) 2001-09-20 2002-09-19 Dispositifs photovoltaiques et compositions utilisees dans ces dispositifs
PCT/US2002/029608 Ceased WO2003026025A2 (fr) 2001-09-20 2002-09-19 Synthese de couches, de revetements ou de films au moyen d'une couche de collecte

Country Status (4)

Country Link
EP (3) EP1476906A2 (fr)
AU (3) AU2002334597B2 (fr)
WO (6) WO2003026026A2 (fr)
ZA (2) ZA200404979B (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9105797B2 (en) 2012-05-31 2015-08-11 Alliance For Sustainable Energy, Llc Liquid precursor inks for deposition of In—Se, Ga—Se and In—Ga—Se
US9130084B2 (en) 2010-05-21 2015-09-08 Alliance for Substainable Energy, LLC Liquid precursor for deposition of copper selenide and method of preparing the same
US9142408B2 (en) 2010-08-16 2015-09-22 Alliance For Sustainable Energy, Llc Liquid precursor for deposition of indium selenide and method of preparing the same

Families Citing this family (6)

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Publication number Priority date Publication date Assignee Title
WO2005040454A1 (fr) 2003-10-29 2005-05-06 Kabushiki Kaisha Kobe Seiko Sho Procede et dispositif de traitement de surface
US20070160763A1 (en) * 2006-01-12 2007-07-12 Stanbery Billy J Methods of making controlled segregated phase domain structures
US7767904B2 (en) 2006-01-12 2010-08-03 Heliovolt Corporation Compositions including controlled segregated phase domain structures
KR101245556B1 (ko) 2006-01-12 2013-03-19 헬리오볼트 코오퍼레이션 제어된 상 분리 도메인 구조를 만드는 장치
US8034317B2 (en) 2007-06-18 2011-10-11 Heliovolt Corporation Assemblies of anisotropic nanoparticles
DE102008014824B4 (de) 2008-03-18 2014-07-10 Leonhard Kurz Stiftung & Co. Kg Dotierfolien und deren Verwendung

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DE4225385A1 (de) * 1992-07-31 1994-02-03 Siemens Solar Gmbh Verfahren zur kostengünstigen Herstellung einer Schicht eines Verbindungshalbleiters
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WO2000033363A1 (fr) * 1998-11-30 2000-06-08 Nova Crystals, Inc. Procede d'assemblage de plaquettes de semi-conducteur dissemblables
US6251754B1 (en) * 1997-05-09 2001-06-26 Denso Corporation Semiconductor substrate manufacturing method

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EP0381509A1 (fr) * 1989-02-02 1990-08-08 Alcan International Limited Procédé pour produire des films détachés fabriqués par dépôt en phase vapeur
DE4225385A1 (de) * 1992-07-31 1994-02-03 Siemens Solar Gmbh Verfahren zur kostengünstigen Herstellung einer Schicht eines Verbindungshalbleiters
EP0621130A2 (fr) * 1993-04-23 1994-10-26 Canon Kabushiki Kaisha Méthode de liaison à l'état solide
WO1997022152A1 (fr) * 1995-12-12 1997-06-19 Davis, Joseph & Negley ELABORATION DE PELLICULE-PRECURSEURS EN CuxInyGazSen (x=0-2, y=0-2, z=0-2, n=0-3) PAR GALVANOSPLASTIE POUR LA FABRICATION DE CELLULES SOLAIRES A HAUT RENDEMENT
US6251754B1 (en) * 1997-05-09 2001-06-26 Denso Corporation Semiconductor substrate manufacturing method
WO2000033363A1 (fr) * 1998-11-30 2000-06-08 Nova Crystals, Inc. Procede d'assemblage de plaquettes de semi-conducteur dissemblables

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9130084B2 (en) 2010-05-21 2015-09-08 Alliance for Substainable Energy, LLC Liquid precursor for deposition of copper selenide and method of preparing the same
US9142408B2 (en) 2010-08-16 2015-09-22 Alliance For Sustainable Energy, Llc Liquid precursor for deposition of indium selenide and method of preparing the same
US9105797B2 (en) 2012-05-31 2015-08-11 Alliance For Sustainable Energy, Llc Liquid precursor inks for deposition of In—Se, Ga—Se and In—Ga—Se

Also Published As

Publication number Publication date
ZA200404981B (en) 2005-09-28
WO2003026025A2 (fr) 2003-03-27
WO2003026022A2 (fr) 2003-03-27
WO2003026028A3 (fr) 2003-12-18
WO2003026024A2 (fr) 2003-03-27
ZA200404979B (en) 2005-07-27
EP1470593A2 (fr) 2004-10-27
WO2003026025A3 (fr) 2003-12-18
WO2003026026A2 (fr) 2003-03-27
AU2002326953A1 (en) 2003-04-01
WO2003026026A3 (fr) 2003-12-18
WO2003026028A2 (fr) 2003-03-27
AU2002325038B2 (en) 2006-03-09
WO2003026023A2 (fr) 2003-03-27
AU2002334597B2 (en) 2005-12-22
WO2003026024A3 (fr) 2003-12-31
EP1476906A2 (fr) 2004-11-17
EP1470594A2 (fr) 2004-10-27
WO2003026022A3 (fr) 2003-11-20

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