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WO2003017371A3 - Integrierte halbleiterschaltung mit einem varaktor - Google Patents

Integrierte halbleiterschaltung mit einem varaktor Download PDF

Info

Publication number
WO2003017371A3
WO2003017371A3 PCT/DE2002/002953 DE0202953W WO03017371A3 WO 2003017371 A3 WO2003017371 A3 WO 2003017371A3 DE 0202953 W DE0202953 W DE 0202953W WO 03017371 A3 WO03017371 A3 WO 03017371A3
Authority
WO
WIPO (PCT)
Prior art keywords
varactor
implant
drain
source
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/DE2002/002953
Other languages
English (en)
French (fr)
Other versions
WO2003017371A2 (de
Inventor
Judith Maget
Marc Tiebout
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Publication of WO2003017371A2 publication Critical patent/WO2003017371A2/de
Publication of WO2003017371A3 publication Critical patent/WO2003017371A3/de
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03J—TUNING RESONANT CIRCUITS; SELECTING RESONANT CIRCUITS
    • H03J3/00—Continuous tuning
    • H03J3/02—Details
    • H03J3/16—Tuning without displacement of reactive element, e.g. by varying permeability
    • H03J3/18—Tuning without displacement of reactive element, e.g. by varying permeability by discharge tube or semiconductor device simulating variable reactance
    • H03J3/185—Tuning without displacement of reactive element, e.g. by varying permeability by discharge tube or semiconductor device simulating variable reactance with varactors, i.e. voltage variable reactive diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/212—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors
    • H10D84/215—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors of only varactors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/027—Generators characterised by the type of circuit or by the means used for producing pulses by the use of logic circuits, with internal or external positive feedback
    • H03K3/03—Astable circuits
    • H03K3/0315—Ring oscillators

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

Mit integrierten Halbleiterschaltungen können VCO-Schaltungen (voltage controlled oscillator) gefertigt werden, die elektrische Schwingkreise enthalten, deren Schwingverhalten mithilfe eines Varaktors (2), d.h. eines Kondensators variabler Kapazität verändert werden kann. Integrierte Varaktoren (2) werden heute in MOSFET-Bauweise hergestellt, d.h. weisen eine Gate-Elektrode (3) und je eine Source- (6) und eine Drain-Implantation (7) auf, wobei letztere elektrisch kurzgeschlossen werden und gemeinsam mit dem Halbleitersubstrat unter der Gate-Elektrode (3) eine von zwei Kondensatorplatten bilden. Um das Kapazitätsverhältnis der maximalen Kapazität zur minimalen Kapazität eines solchen Varaktors (2) zu erhöhen, wird vorgeschlagen, die Source-/Drain-Implantationen (6, 7) in lateraler Richtung vollständig außerhalb der Grundfläche (8) des Schichtenstapels (5) der Gate-Elektrode (3) anzuordnen und das Halbleitersubstrat (1) unter der Gateoxidschicht (4) zwischen der Source-Implantation (6) und der Drain-Implantation (7) in lateraler Richtung homogen zu dotieren.
PCT/DE2002/002953 2001-08-10 2002-08-12 Integrierte halbleiterschaltung mit einem varaktor Ceased WO2003017371A2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10139396A DE10139396A1 (de) 2001-08-10 2001-08-10 Integrierte Halbleiterschaltung mit einem Varaktor
DE10139396.2 2001-08-10

Publications (2)

Publication Number Publication Date
WO2003017371A2 WO2003017371A2 (de) 2003-02-27
WO2003017371A3 true WO2003017371A3 (de) 2003-08-28

Family

ID=7695073

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2002/002953 Ceased WO2003017371A2 (de) 2001-08-10 2002-08-12 Integrierte halbleiterschaltung mit einem varaktor

Country Status (2)

Country Link
DE (1) DE10139396A1 (de)
WO (1) WO2003017371A2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5121114B2 (ja) * 2003-05-29 2013-01-16 三洋電機株式会社 画素回路および表示装置
SE527215C2 (sv) * 2004-03-23 2006-01-24 Infineon Technologies Ag Integrerad omkopplingsanordning
US20090115525A1 (en) * 2004-10-22 2009-05-07 University Of Florida Research Foundation, Inc. Frequency tunable low noise amplifier
WO2010010518A1 (en) * 2008-07-23 2010-01-28 Nxp B.V. Circuit comprising a varactor device
US9640532B2 (en) * 2014-02-14 2017-05-02 Qualcomm Incorporated Stacked metal oxide semiconductor (MOS) and metal oxide metal (MOM) capacitor architecture

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5872047A (en) * 1996-06-24 1999-02-16 Hyundai Electronics Industries Co., Ltd. Method for forming shallow junction of a semiconductor device
WO1999013514A2 (en) * 1997-09-11 1999-03-18 Telefonaktiebolaget Lm Ericsson Electrical devices and a method of manufacturing the same
US5965928A (en) * 1996-04-17 1999-10-12 Nec Corporation Semiconductor device with MOS capacitor and fabrication method thereof
US6034388A (en) * 1998-05-15 2000-03-07 International Business Machines Corporation Depleted polysilicon circuit element and method for producing the same
WO2001020666A1 (en) * 1999-09-10 2001-03-22 Koninklijke Philips Electronics N.V. Integrated circuit
US6228696B1 (en) * 1998-11-05 2001-05-08 Vantis Corporation Semiconductor-oxide-semiconductor capacitor formed in integrated circuit
US20010009785A1 (en) * 1999-12-30 2001-07-26 Mohamed Arafa Method of fabricating a supply decoupling capacitor

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5561398A (en) * 1995-05-16 1996-10-01 National Semiconductor Corporation LC-tuned voltage controlled ring oscillator
US5965912A (en) * 1997-09-03 1999-10-12 Motorola, Inc. Variable capacitor and method for fabricating the same
ES2317648T3 (es) * 1997-09-11 2009-04-16 Telefonaktiebolaget Lm Ericsson (Publ) Dispositivo electrico que comprende una capacitancia o capacidad depe ndiente del voltaje o tension y metodo de fabricacion del mismo.
EP1024538A1 (de) * 1999-01-29 2000-08-02 STMicroelectronics S.r.l. MOS Varaktor, insbesondere für Radiofrequenzsender-Empfänger

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5965928A (en) * 1996-04-17 1999-10-12 Nec Corporation Semiconductor device with MOS capacitor and fabrication method thereof
US5872047A (en) * 1996-06-24 1999-02-16 Hyundai Electronics Industries Co., Ltd. Method for forming shallow junction of a semiconductor device
WO1999013514A2 (en) * 1997-09-11 1999-03-18 Telefonaktiebolaget Lm Ericsson Electrical devices and a method of manufacturing the same
US6034388A (en) * 1998-05-15 2000-03-07 International Business Machines Corporation Depleted polysilicon circuit element and method for producing the same
US6228696B1 (en) * 1998-11-05 2001-05-08 Vantis Corporation Semiconductor-oxide-semiconductor capacitor formed in integrated circuit
WO2001020666A1 (en) * 1999-09-10 2001-03-22 Koninklijke Philips Electronics N.V. Integrated circuit
US20010009785A1 (en) * 1999-12-30 2001-07-26 Mohamed Arafa Method of fabricating a supply decoupling capacitor

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
SVELTO F ET AL: "A 1.3 GHZ LOW-PHASE NOISE FULLY TUNABLE CMOS LC VCO", IEEE JOURNAL OF SOLID-STATE CIRCUITS, IEEE INC. NEW YORK, US, vol. 35, no. 3, March 2000 (2000-03-01), pages 356 - 361, XP000956944, ISSN: 0018-9200 *
SVELTO F ET AL: "A METAL-OXIDE-SEMICONDUCTOR VARACTOR", IEEE ELECTRON DEVICE LETTERS, IEEE INC. NEW YORK, US, vol. 20, no. 4, April 1999 (1999-04-01), pages 164 - 166, XP000805722, ISSN: 0741-3106 *

Also Published As

Publication number Publication date
DE10139396A1 (de) 2003-01-16
WO2003017371A2 (de) 2003-02-27

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