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WO2003012845A1 - Dispositif et procede de fabrication de semiconducteurs - Google Patents

Dispositif et procede de fabrication de semiconducteurs Download PDF

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Publication number
WO2003012845A1
WO2003012845A1 PCT/JP2002/007821 JP0207821W WO03012845A1 WO 2003012845 A1 WO2003012845 A1 WO 2003012845A1 JP 0207821 W JP0207821 W JP 0207821W WO 03012845 A1 WO03012845 A1 WO 03012845A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor fabrication
quick
treating
heat
metal thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2002/007821
Other languages
English (en)
Japanese (ja)
Inventor
Daniel Lee Diehl
Nobuo Owada
Yuki Togashi
Keiji Miyamoto
Terukazu Aitani
Kyoji Goto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to JP2003517927A priority Critical patent/JPWO2003012845A1/ja
Publication of WO2003012845A1 publication Critical patent/WO2003012845A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76861—Post-treatment or after-treatment not introducing additional chemical elements into the layer
    • H01L21/76864—Thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
    • H01L21/76873—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for electroplating

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

Selon l'invention, un recuit est réalisé après formation d'une couche de semence par un procédé de dépôt physique en phase vapeur (PVD), de sorte à former de manière satisfaisante une couche de semence et une couche mince métallique de câblage constituant une structure double damascène dans un dispositif semiconducteur. La couche mince métallique de câblage est ensuite formée par un procédé de dépôt électro-chimique (ECP). L'invention concerne également un système de PVD comprenant une chambre de recuit de traitement à réchauffement rapide et un système d'ECP comprenant une chambre de recuit de traitement à réchauffement rapide qui permettent de mettre en oeuvre le procédé selon l'invention.
PCT/JP2002/007821 2001-07-31 2002-07-31 Dispositif et procede de fabrication de semiconducteurs Ceased WO2003012845A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003517927A JPWO2003012845A1 (ja) 2001-07-31 2002-07-31 半導体製造装置及び半導体製造方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2001-232960 2001-07-31
JP2001-268038 2001-07-31
JP2001268038 2001-07-31
JP2001232960 2001-07-31

Publications (1)

Publication Number Publication Date
WO2003012845A1 true WO2003012845A1 (fr) 2003-02-13

Family

ID=26619736

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2002/007821 Ceased WO2003012845A1 (fr) 2001-07-31 2002-07-31 Dispositif et procede de fabrication de semiconducteurs

Country Status (2)

Country Link
JP (1) JPWO2003012845A1 (fr)
WO (1) WO2003012845A1 (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005340478A (ja) * 2004-05-26 2005-12-08 Toshiba Corp 半導体装置の製造方法
CN111524839A (zh) * 2012-08-31 2020-08-11 斯克林集团公司 基板处理装置
CN113791510A (zh) * 2021-08-06 2021-12-14 河北光兴半导体技术有限公司 用于电致变色玻璃的制备系统
JP2024009941A (ja) * 2017-07-14 2024-01-23 マイクロマテリアルズ エルエルシー 高圧処理チャンバ用のガス供給システム

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07142552A (ja) * 1993-11-20 1995-06-02 Tokyo Electron Ltd 搬送アーム装置及びこれを用いた処理室集合装置
JPH1079432A (ja) * 1996-08-09 1998-03-24 Samsung Electron Co Ltd 半導体装置製造のためのメタル工程自動化システム
JPH11238694A (ja) * 1998-02-23 1999-08-31 Anelva Corp 真空レーザアニール装置のステージ装置
JPH11260761A (ja) * 1998-03-10 1999-09-24 Ebara Corp 基板のめっき方法
JPH11283979A (ja) * 1998-03-27 1999-10-15 Sony Corp 半導体装置の製造方法
JP2000124156A (ja) * 1998-10-12 2000-04-28 Sony Corp 半導体製造装置
JP2000269334A (ja) * 1999-03-18 2000-09-29 Kobe Steel Ltd 配線膜の形成方法
JP2000323554A (ja) * 1999-05-14 2000-11-24 Tokyo Electron Ltd 処理装置
US6258717B1 (en) * 1999-07-30 2001-07-10 International Business Machines Corporation Method to produce high quality metal fill in deep submicron vias and lines

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07142552A (ja) * 1993-11-20 1995-06-02 Tokyo Electron Ltd 搬送アーム装置及びこれを用いた処理室集合装置
JPH1079432A (ja) * 1996-08-09 1998-03-24 Samsung Electron Co Ltd 半導体装置製造のためのメタル工程自動化システム
JPH11238694A (ja) * 1998-02-23 1999-08-31 Anelva Corp 真空レーザアニール装置のステージ装置
JPH11260761A (ja) * 1998-03-10 1999-09-24 Ebara Corp 基板のめっき方法
JPH11283979A (ja) * 1998-03-27 1999-10-15 Sony Corp 半導体装置の製造方法
JP2000124156A (ja) * 1998-10-12 2000-04-28 Sony Corp 半導体製造装置
JP2000269334A (ja) * 1999-03-18 2000-09-29 Kobe Steel Ltd 配線膜の形成方法
JP2000323554A (ja) * 1999-05-14 2000-11-24 Tokyo Electron Ltd 処理装置
US6258717B1 (en) * 1999-07-30 2001-07-10 International Business Machines Corporation Method to produce high quality metal fill in deep submicron vias and lines

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005340478A (ja) * 2004-05-26 2005-12-08 Toshiba Corp 半導体装置の製造方法
CN111524839A (zh) * 2012-08-31 2020-08-11 斯克林集团公司 基板处理装置
CN111524839B (zh) * 2012-08-31 2023-06-06 斯克林集团公司 基板处理装置
JP2024009941A (ja) * 2017-07-14 2024-01-23 マイクロマテリアルズ エルエルシー 高圧処理チャンバ用のガス供給システム
JP7629968B2 (ja) 2017-07-14 2025-02-14 マイクロマテリアルズ エルエルシー 高圧処理チャンバ用のガス供給システム
CN113791510A (zh) * 2021-08-06 2021-12-14 河北光兴半导体技术有限公司 用于电致变色玻璃的制备系统

Also Published As

Publication number Publication date
JPWO2003012845A1 (ja) 2004-11-25

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