WO2003007026A1 - Method for producing microscopic components - Google Patents
Method for producing microscopic components Download PDFInfo
- Publication number
- WO2003007026A1 WO2003007026A1 PCT/FR2002/002488 FR0202488W WO03007026A1 WO 2003007026 A1 WO2003007026 A1 WO 2003007026A1 FR 0202488 W FR0202488 W FR 0202488W WO 03007026 A1 WO03007026 A1 WO 03007026A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- etching
- mask
- isotropic
- openings
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00388—Etch mask forming
- B81C1/00404—Mask characterised by its size, orientation or shape
Definitions
- the present invention relates to the manufacture of microscopic parts.
- microscopic parts are currently more and more widespread.
- a preferred field of application relates to systems combining both integrated circuits and microscopic optical parts. These can be, for example, light wave communication systems, optical interconnection systems, light beam controls, display systems, etc.
- There are many methods of manufacturing microscopic parts We can cite, by way of example, direct etching processes by scanning a laser beam or electrons, or reactive ion etching (RIE) carried out under anisotropic conditions and using successive deposits of masks on the part. to engrave.
- RIE reactive ion etching
- the mask includes a set of openings of square section and variable area. For the same duration of exposure to the laser beam, the depth of material of substrate removed associated with an opening of the mask depends on the area of the latter.
- the substrate Since laser etching is essentially anisotropic, the substrate is only etched in areas exposed directly to the laser beam. So that the entire surface of the substrate is etched, this substrate is mounted on a movable table, and is very slightly displaced, during etching, around a rest position in a plane perpendicular to the laser beam, while the source of the beam and mask remain fixed.
- the present invention relates to a particularly simple method for manufacturing microscopic parts.
- the present invention also relates to a method for manufacturing microscopic parts compatible with current technologies for manufacturing integrated circuits.
- the present invention provides a method of manufacturing a microscopic part in a substrate comprising the steps of carrying out a first etching, having a loading and isotropic effect, of the substrate through a mask comprising an assembly substantially punctual openings arranged in a matrix network, the area of each opening being determined by the depth to be etched under this opening; and perform a second isotropic etching of the substrate in the absence of the mask.
- the openings of the mask are substantially circular.
- the mask is deposited on the substrate, then is removed, after the first isotropic etching of the substrate.
- the first etching and / or the second etching are reactive ion etchings produced under isotropic conditions.
- the first etching and / or the second etching are chemical etchings produced under isotropic conditions.
- the substrate is a semiconductor wafer.
- the mask is made of aluminum.
- FIG. 1 represents a sectional view of a substrate, covered with a mask, in which it is desired to manufacture a microscopic part
- 2 shows a top view of the mask of Figure 1
- Figure 3 shows the view of Figure 1 after a first isotropic etching
- Figure 4 shows the view of Figure 1 after removal of the mask
- FIG. 5 represents the view of FIG. 1 after a second isotropic etching
- Figure 6 shows a schematic perspective view of the part obtained.
- FIG. 1 represents a substrate 10 covered with a mask 11.
- the substrate 10 consists of a silicon wafer and the mask 11 in a thin layer of aluminum, or aluminum alloy, having a thickness for example of about 200 nm, deposited on the substrate 10 according to any technique known to those skilled in the art.
- Four substantially cylindrical openings 12, 13, 14 and 15, formed in the mask 11, are shown in FIG. 1. They each have, in the plane of the mask 11, a circular section. In the example of Figure 1, the diameter of the openings 12 to 15 increases from the left to the right of the figure.
- the axes of the openings 12 to 15, shown in dotted lines, are parallel and also spaced.
- the openings 12 to 15 are defined in the mask 11 using conventional lithography and etching techniques, well known to those skilled in the art.
- FIG. 2 represents a top view of an example of a mask 11.
- the openings of the mask 11 are represented by black disks and are distributed according to a regular matrix network comprising, in the present example, 9 rows and 19 equally spaced columns. It should be noted that the distribution, the number and the dimensions of the openings of the mask 11 are given simply by way of example so as to clearly explain the method according to the invention.
- the mask 11, as shown in Figure 2 is intended to manufacture a part having the shape of a convex half-ellipsoid. For this purpose, the areas of the openings gradually increase from the center of the network to the outer edges.
- FIG. 3 represents a sectional view of the substrate 10 after the completion of a first etching.
- the engraving used is a reactive ion etching (RIE) carried out under isotropic conditions, for example it may be an etching of the SF 6 type at high pressure and at low power.
- RIE reactive ion etching
- the present invention uses the principle commonly called "loading effect", characteristic of this type of etching, according to which the depth of etched substrate 10 is directly a function of the area of the opening of the mask 11 placed in screw -a-vis. Thus, by precisely fixing the areas of the different openings of the mask 11, it is possible to control the depth of the substrate 10 etched opposite each opening.
- the etching being carried out isotropically, it extends laterally at substantially the same speed as orthogonally to the surface of the substrate 10.
- the portions of the substrate 10 located between the openings of the mask 11, are also etched d 'a depth which depends on the dimension of the openings of the mask 11 adjacent.
- the depth of the etched substrate 10 increases from the center to the outer edges of the mask 11.
- the outer surface 16 of the substrate 10 can, after the etching described above, be fairly irregular and have a high roughness.
- FIG. 4 represents a sectional view of the substrate 10 once the mask 11 has been removed.
- the removal of the mask 11 can be obtained by chemical etching.
- FIG. 5 represents the substrate 10 after carrying out a second isotropic etching, for example a reactive ion etching.
- the second etching makes it possible to polish the external surface 16 of the substrate 10 in order to reduce the roughness.
- the roughness finally obtained is a function of the duration of the second isotropic polishing etching.
- an etching can be carried out for approximately 20 to 50 minutes, in order to obtain roughness less than approximately 30 nanometers.
- FIG. 6 represents the general shape of the part obtained from the mask 11 of FIG. 2. It is a semi-ellipsoid, projecting from the semiconductor wafer from which it was formed.
- the half ellipsoid can be used as a lens in micro-optical systems. According to the method of the invention, it is possible to obtain a half-ellipsoid having a large diameter of a few hundred micrometers.
- the present process has many advantages. Indeed, it uses etching technologies which are widely used in the integrated circuit manufacturing industry. It is therefore easy to envisage manufacturing on an industrial scale microscopic parts according to the present process. In addition, the method being fully compatible with integrated circuit technology, it is possible, for example, to integrate electronic components and optical elements on the same component.
- the method according to the invention is particularly simple to implement since it comprises only a small number of steps (in particular a single masking of the substrate).
- the second etching has a simple polishing role to obtain a surface having an acceptable roughness.
- the present invention is susceptible of various variants and modifications which will appear to those skilled in the art.
- the present invention mentions the use of a silicon type substrate. It is, of course, entirely possible to use the present process with another type of substrate, for example glass, or plastic.
- the material making up the mask may be different from aluminum or an aluminum alloy. he can be of any type of material compatible with the substrate and the engravings used (for example oxide or chromium). The material must be such that the mask has a certain rigidity so as not to sag on the exterior surface of the substrate when the first isotropic etching of the substrate is carried out.
- the openings made in the substrate do not necessarily have a circular section. Any type of section may be suitable, for example square, and the type of section of the openings may be chosen according to the manufacturing techniques of the mask used.
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Micromachines (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
PROCEDE DE FABRICATION DE PIECES MICROSCOPIQUES PROCESS FOR MANUFACTURING MICROSCOPIC PARTS
La présente invention concerne la fabrication de pièces microscopiques.The present invention relates to the manufacture of microscopic parts.
L'utilisation de pièces microscopiques est actuellement de plus en plus répandue. Un domaine d'application privilégié concerne les systèmes associant à la fois des circuits intégrés et des pièces optiques microscopiques. Il peut s'agir par exemple de systèmes de communication par ondes lumineuses, de systèmes d'interconnexion optique, de commandes de faisceaux lumineux, de systèmes d'affichage, etc. II existe de nombreux procédés de fabrication de pièces microscopiques. On peut citer, à titre d'exemple, des procédés de gravures directes par balayage d'un faisceau laser ou d'électrons, ou de gravures ioniques réactives (RIE) réalisées dans des conditions anisotropes et utilisant des dépôts successifs de masques sur la pièce à graver.The use of microscopic parts is currently more and more widespread. A preferred field of application relates to systems combining both integrated circuits and microscopic optical parts. These can be, for example, light wave communication systems, optical interconnection systems, light beam controls, display systems, etc. There are many methods of manufacturing microscopic parts. We can cite, by way of example, direct etching processes by scanning a laser beam or electrons, or reactive ion etching (RIE) carried out under anisotropic conditions and using successive deposits of masks on the part. to engrave.
Le document intitulé "A New Method for Three Dimensional Excimer Laser I crcmac±i-Liiing, Hole Area Modulation (HA) " T. Masuzawa, J. Olde-Benneker, J.J.C. Eindhoven, CIRP General Assembly, volume 49 N°l 139-142 (2000) , décrit un procédé de fabrication de pièces microscopiques utilisant un laser venant graver un substrat au travers d'un masque éloigné du substrat, des moyens de focalisation du faisceau laser étant disposés entre le substrat et le masque. Le masque comprend un ensemble d'ouvertures de section carrée et d'aire variable. Pour une même durée d'exposition au faisceau laser, la profondeur de matière de substrat éliminé associée à une ouverture du masque est fonction de l'aire de celle-ci. La gravure laser étant essentiellement anisotrope, le substrat n'est gravé que dans les zones exposées directement au faisceau laser. Pour que toute la surface du substrat soit gravée, ce substrat est monté sur une table mobile, et est très légèrement déplacé, lors de la gravure, autour d'une position de repos dans un plan perpendiculaire au faisceau laser, tandis que la source du faisceau et le masque restent fixes.The document entitled "A New Method for Three Dimensional Excimer Laser I crcmac ± i-Liiing, Hole Area Modulation (HA)" T. Masuzawa, J. Olde-Benneker, JJC Eindhoven, CIRP General Assembly, volume 49 N ° l 139- 142 (2000), describes a method of manufacturing microscopic parts using a laser etching a substrate through a mask remote from the substrate, means for focusing the laser beam being arranged between the substrate and the mask. The mask includes a set of openings of square section and variable area. For the same duration of exposure to the laser beam, the depth of material of substrate removed associated with an opening of the mask depends on the area of the latter. Since laser etching is essentially anisotropic, the substrate is only etched in areas exposed directly to the laser beam. So that the entire surface of the substrate is etched, this substrate is mounted on a movable table, and is very slightly displaced, during etching, around a rest position in a plane perpendicular to the laser beam, while the source of the beam and mask remain fixed.
L'utilisation d'ouvertures d'aires différentes réparties sur le masque permet de réaliser des pièces microscopiques présentant une surface extérieure continûment courbe comportant des dénivellations en marche d'escalier. Néanmoins, le procédé décrit dans ce document demeure complexe et délicat à mettre en oeuvre à une échelle industrielle, étant donné que le substrat doit être disposé sur un support mobile par rapport à la source laser et doit être déplacé de façon très précise en statique et en dynamique.The use of openings of different areas distributed over the mask makes it possible to produce microscopic parts having a continuously curved external surface comprising unevennesses in staircase step. However, the process described in this document remains complex and delicate to implement on an industrial scale, given that the substrate must be placed on a mobile support relative to the laser source and must be moved very precisely in static and in dynamics.
La présente invention vise un procédé particulièrement simple de fabrication de pièces microscopiques.The present invention relates to a particularly simple method for manufacturing microscopic parts.
La présente invention vise également un procédé de fabrication de pièces microscopiques compatible avec les technologies actuelles de fabrication de circuits intégrés.The present invention also relates to a method for manufacturing microscopic parts compatible with current technologies for manufacturing integrated circuits.
Pour atteindre cet objet, la présente invention prévoit un procédé de fabrication d'une pièce microscopique dans un substrat comprenant les étapes consistant à effectuer une première gravure, présentant un effet de chargement et isotrope, du substrat au travers d'un masque comportant un ensemble d'ouvertures sensiblement ponctuelles disposées selon un réseau matriciel, l'aire de chaque ouverture étant déterminée par la profondeur à graver sous cette ouverture ; et effectuer une deuxième gravure isotrope du substrat en l'absence du masque. Selon un mode de réalisation de l'invention, les ouvertures du masque sont sensiblement circulaires.To achieve this object, the present invention provides a method of manufacturing a microscopic part in a substrate comprising the steps of carrying out a first etching, having a loading and isotropic effect, of the substrate through a mask comprising an assembly substantially punctual openings arranged in a matrix network, the area of each opening being determined by the depth to be etched under this opening; and perform a second isotropic etching of the substrate in the absence of the mask. According to one embodiment of the invention, the openings of the mask are substantially circular.
Selon un mode de réalisation de 1 ' invention, le masque est déposé sur le substrat, puis est retiré, après la première gravure isotrope du substrat.According to an embodiment of the invention, the mask is deposited on the substrate, then is removed, after the first isotropic etching of the substrate.
Selon un mode de réalisation de l'invention, la première gravure et/ou la seconde gravure sont des gravures ioniques réactives réalisées dans des conditions isotropes.According to one embodiment of the invention, the first etching and / or the second etching are reactive ion etchings produced under isotropic conditions.
Selon un mode de réalisation de 1 ' invention, la pre- mière gravure et/ou la seconde gravure sont des gravures chimiques réalisées dans des conditions isotropes.According to an embodiment of the invention, the first etching and / or the second etching are chemical etchings produced under isotropic conditions.
Selon un mode de réalisation de l'invention, le substrat est une plaquette de semiconducteur.According to one embodiment of the invention, the substrate is a semiconductor wafer.
Selon un mode de réalisation de l'invention, le masque est en aluminium.According to one embodiment of the invention, the mask is made of aluminum.
Ces objets, caractéristiques et avantages, ainsi que d'autres de la présente invention seront exposés en détail dans la description suivante d'un mode de réalisation particulier fait à titre non-limitatif en relation avec les figures jointes parmi lesquelles : la figure 1 représente une vue en coupe d'un substrat, recouvert d'un masque, dans lequel on veut fabriquer une pièce microscopique ; la figure 2 représente une vue de dessus du masque de la figure 1 ; la figure 3 représente la vue de la figure 1 après une première gravure isotrope ; la figure 4 représente la vue de la figure 1 après retrait du masque ; la figure 5 représente la vue de la figure 1 après une seconde gravure isotrope ; et la figure 6 représente une vue schématique en perspective de la pièce obtenue.These objects, characteristics and advantages, as well as others of the present invention will be described in detail in the following description of a particular embodiment made without limitation in relation to the attached figures, among which: FIG. 1 represents a sectional view of a substrate, covered with a mask, in which it is desired to manufacture a microscopic part; 2 shows a top view of the mask of Figure 1; Figure 3 shows the view of Figure 1 after a first isotropic etching; Figure 4 shows the view of Figure 1 after removal of the mask; FIG. 5 represents the view of FIG. 1 after a second isotropic etching; and Figure 6 shows a schematic perspective view of the part obtained.
On va décrire de façon détaillée un mode de réalisation de la présente invention en relation avec les figures 1 à 6. On notera que dans ces diverses figures, les épaisseurs et dimensions latérales des divers composants ne sont pas tracées à l'échelle ni à l'intérieur d'une même figure ni d'une figure à l'autre pour améliorer la lisibilité de ces figures. Par ailleurs, de mêmes références désigneront de mêmes éléments, à des stades successifs de fabrication.An embodiment of the present invention will be described in detail in relation to the Figures 1 to 6. It will be noted that in these various figures, the thicknesses and lateral dimensions of the various components are not drawn to scale either within the same figure or from one figure to another to improve the readability of these figures. Furthermore, the same references will designate the same elements, at successive stages of manufacture.
La figure 1 représente un substrat 10 recouvert d'un masque 11. Le substrat 10 consiste en une plaquette de silicium et le masque 11 en une couche mince d'aluminium, ou d'alliage d'aluminium, ayant une épaisseur par exemple d'environ 200 nm, déposée sur le substrat 10 selon n'importe quelle technique connue de 1 'homme du métier. Quatre ouvertures 12, 13, 14 et 15, sensiblement cylindriques, formées dans le masque 11, sont représentées sur la figure 1. Elles possèdent chacune, dans le plan du masque 11, une section circulaire. Dans l'exemple de la figure 1, le diamètre des ouvertures 12 à 15 augmente de la gauche vers la droite de la figure. Les axes des ouvertures 12 à 15, représentés en pointillés, sont parallèles et également espacés. Les ouvertures 12 à 15 sont définies dans le masque 11 à l'aide de techniques classiques de lithographie et de gravure, bien connues de l'homme du métier.FIG. 1 represents a substrate 10 covered with a mask 11. The substrate 10 consists of a silicon wafer and the mask 11 in a thin layer of aluminum, or aluminum alloy, having a thickness for example of about 200 nm, deposited on the substrate 10 according to any technique known to those skilled in the art. Four substantially cylindrical openings 12, 13, 14 and 15, formed in the mask 11, are shown in FIG. 1. They each have, in the plane of the mask 11, a circular section. In the example of Figure 1, the diameter of the openings 12 to 15 increases from the left to the right of the figure. The axes of the openings 12 to 15, shown in dotted lines, are parallel and also spaced. The openings 12 to 15 are defined in the mask 11 using conventional lithography and etching techniques, well known to those skilled in the art.
La figure 2 représente une vue de dessus d'un exemple de masque 11. Les ouvertures du masque 11 sont représentées par des disques noirs et sont réparties selon un réseau matriciel régulier comportant, dans le présent exemple, 9 lignes et 19 colonnes également espacées. Il faut bien noter que la répartition, le nombre et les dimensions des ouvertures du masque 11 sont donnés à simple titre d'exemple de façon à clairement expliquer le procédé selon l'invention. Le masque 11, tel que représenté sur la figure 2, est destiné à fabriquer une pièce ayant la forme d'un demi-ellipsoïde convexe. Dans ce but, les aires des ouvertures augmentent graduellement depuis le centre du réseau jusqu'aux bords extérieurs.FIG. 2 represents a top view of an example of a mask 11. The openings of the mask 11 are represented by black disks and are distributed according to a regular matrix network comprising, in the present example, 9 rows and 19 equally spaced columns. It should be noted that the distribution, the number and the dimensions of the openings of the mask 11 are given simply by way of example so as to clearly explain the method according to the invention. The mask 11, as shown in Figure 2, is intended to manufacture a part having the shape of a convex half-ellipsoid. For this purpose, the areas of the openings gradually increase from the center of the network to the outer edges.
La figure 3 représente une vue en coupe du substrat 10 après la réalisation d'une première gravure. La gravure utilisée est une gravure ionique réactive (RIE) réalisée dans des conditions isotropes, par exemple il peut s'agir d'une gravure du type SF6 à forte pression et à faible puissance. La présente invention utilise le principe communément appelé "effet de chargement" (loading effect) , caractéristique de ce type de gravure, selon lequel la profondeur de substrat 10 gravé est directement fonction de l'aire de l'ouverture du masque 11 placée en vis-à-vis. Ainsi, en fixant précisément les aires des différentes ouvertures du masque 11, il est possible de contrôler la profondeur de substrat 10 gravé en vis-à-vis de chaque ouverture. En outre, la gravure étant réalisée de manière isotrope, elle s'étend latéralement sensiblement à la même vitesse qu'orthogonalement à la surface du substrat 10. Ainsi, les portions du substrat 10 situées entre les ouvertures du masque 11, sont également gravées d'une profondeur qui dépend de la dimension des ouvertures du masque 11 adjacentes. Dans le présent exemple, la profondeur de substrat 10 gravé augmente depuis le centre jusqu'aux bords extérieurs du masque 11. Comme cela est représenté sur la figure 3, la surface extérieure 16 du substrat 10 peut, après la gravure décrite ci-dessus, être assez irrégulière et présenter une rugosité élevée.FIG. 3 represents a sectional view of the substrate 10 after the completion of a first etching. The engraving used is a reactive ion etching (RIE) carried out under isotropic conditions, for example it may be an etching of the SF 6 type at high pressure and at low power. The present invention uses the principle commonly called "loading effect", characteristic of this type of etching, according to which the depth of etched substrate 10 is directly a function of the area of the opening of the mask 11 placed in screw -a-vis. Thus, by precisely fixing the areas of the different openings of the mask 11, it is possible to control the depth of the substrate 10 etched opposite each opening. In addition, the etching being carried out isotropically, it extends laterally at substantially the same speed as orthogonally to the surface of the substrate 10. Thus, the portions of the substrate 10 located between the openings of the mask 11, are also etched d 'a depth which depends on the dimension of the openings of the mask 11 adjacent. In the present example, the depth of the etched substrate 10 increases from the center to the outer edges of the mask 11. As shown in FIG. 3, the outer surface 16 of the substrate 10 can, after the etching described above, be fairly irregular and have a high roughness.
La figure 4 représente une vue en coupe du substrat 10 une fois le masque 11 retiré. Le retrait du masque 11 peut être obtenu par gravure chimique. La figure 5 représente le substrat 10 après la réalisation d'une seconde gravure isotrope, par exemple une gravure ionique réactive. La seconde gravure permet de polir la surface extérieure 16 du substrat 10 afin d'en diminuer la rugosité. La rugosité finalement obtenue est fonction de la durée de la seconde gravure isotrope de polissage. A titre d'exemple, on peut réaliser une gravure d'environ 20 à 50 minutes, pour obtenir des rugosités inférieures à 30 nanomètres environ.FIG. 4 represents a sectional view of the substrate 10 once the mask 11 has been removed. The removal of the mask 11 can be obtained by chemical etching. FIG. 5 represents the substrate 10 after carrying out a second isotropic etching, for example a reactive ion etching. The second etching makes it possible to polish the external surface 16 of the substrate 10 in order to reduce the roughness. The roughness finally obtained is a function of the duration of the second isotropic polishing etching. By way of example, an etching can be carried out for approximately 20 to 50 minutes, in order to obtain roughness less than approximately 30 nanometers.
La figure 6 représente la forme générale de la pièce obtenue à partir du masque 11 de la figure 2. Il s'agit d'un demi-ellipsoïde, en saillie par rapport à la plaquette de semiconducteur à partir de laquelle il a été formé. Le demi- ellipsoïde peut être utilisé comme lentille dans des systèmes de micro-optique. Selon le procédé de l'invention, on peut obtenir un demi-ellipsoïde ayant un grand diamètre de quelques centaines de micromètres.FIG. 6 represents the general shape of the part obtained from the mask 11 of FIG. 2. It is a semi-ellipsoid, projecting from the semiconductor wafer from which it was formed. The half ellipsoid can be used as a lens in micro-optical systems. According to the method of the invention, it is possible to obtain a half-ellipsoid having a large diameter of a few hundred micrometers.
Le présent procédé présente de nombreux avantages. En effet, il utilise des technologies de gravure qui sont largement répandues dans 1 ' industrie de fabrication des circuits intégrés . On peut donc facilement envisager de fabriquer à une échelle industrielle de pièces microscopiques selon le présent procédé. De plus, le procédé étant entièrement compatible avec la technologie des circuits intégrés, il est possible, par exemple, d'intégrer sur un même composant des éléments électroniques et des éléments optiques.The present process has many advantages. Indeed, it uses etching technologies which are widely used in the integrated circuit manufacturing industry. It is therefore easy to envisage manufacturing on an industrial scale microscopic parts according to the present process. In addition, the method being fully compatible with integrated circuit technology, it is possible, for example, to integrate electronic components and optical elements on the same component.
Enfin, le procédé selon l'invention est particulièrement simple à mettre en oeuvre puisqu'il ne comporte qu'un faible nombre d'étapes (en particulier un unique masquage du substrat) . Le fait que la première gravure du substrat soit isotrope, ce qui est inhabituel lorsque l'on désire graver un substrat pour l'obtention de formes complexes, permet de graver toute la surface extérieure du substrat dès la première étape de gravure. Grâce à une répartition adaptée des aires des ouvertures du masque, on obtient, dès la première gravure, une surface extérieure de substrat relativement proche de la surface désirée. La seconde gravure a un simple rôle de polissage pour obtenir une surface présentant une rugosité acceptable.Finally, the method according to the invention is particularly simple to implement since it comprises only a small number of steps (in particular a single masking of the substrate). The fact that the first etching of the substrate is isotropic, which is unusual when it is desired to etch a substrate for obtaining complex shapes, makes it possible to etch the entire outer surface of the substrate from the first etching step. Thanks to a suitable distribution of the areas of the mask openings, an external surface of the substrate is obtained relatively close to the desired surface, from the first etching. The second etching has a simple polishing role to obtain a surface having an acceptable roughness.
Bien entendu, la présente invention est susceptible de diverses variantes et modifications qui apparaîtront à l'homme de l'art. En particulier, la présente invention mentionne l'utilisation d'un substrat de type silicium. Il est, bien sûr, tout à fait possible d'utiliser le présent procédé avec un autre type de substrat, par exemple du verre, ou du plastique.Of course, the present invention is susceptible of various variants and modifications which will appear to those skilled in the art. In particular, the present invention mentions the use of a silicon type substrate. It is, of course, entirely possible to use the present process with another type of substrate, for example glass, or plastic.
De même, le matériau composant le masque peut être différent de l'aluminium ou d'un alliage d'aluminium. Il peut s'agir de n'importe quel type de matériau compatible avec le substrat et les gravures utilisés (par exemple de l'oxyde ou du chrome) . Le matériau doit être tel que le masque présente une certaine rigidité pour ne pas s'affaisser sur la surface extérieure du substrat lorsque 1 ' on réalise la première gravure isotrope du substrat. En outre, les ouvertures réalisées dans le substrat ne présentent pas nécessairement une section circulaire. Tout type de section peut convenir, par exemple carrée, et l'on pourra choisir le type de section des ouvertures selon les techniques de fabrication du masque retenues.Likewise, the material making up the mask may be different from aluminum or an aluminum alloy. he can be of any type of material compatible with the substrate and the engravings used (for example oxide or chromium). The material must be such that the mask has a certain rigidity so as not to sag on the exterior surface of the substrate when the first isotropic etching of the substrate is carried out. In addition, the openings made in the substrate do not necessarily have a circular section. Any type of section may be suitable, for example square, and the type of section of the openings may be chosen according to the manufacturing techniques of the mask used.
De même, il est possible d'utiliser tout type de gravure, compatible avec le substrat et le masque, dans la mesure où cette gravure présente un effet de chargement et est isotrope. Ainsi, certaines gravures chimiques peuvent convenir. Similarly, it is possible to use any type of etching, compatible with the substrate and the mask, insofar as this etching has a loading effect and is isotropic. Thus, certain chemical engravings may be suitable.
Claims
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0109363A FR2827270B1 (en) | 2001-07-13 | 2001-07-13 | PROCESS FOR MANUFACTURING MICROSCOPIC PARTS |
| FR01/09363 | 2001-07-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2003007026A1 true WO2003007026A1 (en) | 2003-01-23 |
Family
ID=8865474
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/FR2002/002488 Ceased WO2003007026A1 (en) | 2001-07-13 | 2002-07-12 | Method for producing microscopic components |
Country Status (2)
| Country | Link |
|---|---|
| FR (1) | FR2827270B1 (en) |
| WO (1) | WO2003007026A1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL1034489C2 (en) * | 2007-10-09 | 2009-04-14 | Micronit Microfluidics Bv | Methods for manufacturing a microstructure. |
| CN105000530A (en) * | 2014-04-25 | 2015-10-28 | 劳力士有限公司 | Process for manufacturing a strengthened timepiece component and corresponding timepiece component and timepiece |
| JP2020082345A (en) * | 2018-11-23 | 2020-06-04 | 株式会社村田製作所 | Method for etching recessed structure |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1500975A3 (en) * | 2003-07-21 | 2006-01-18 | Ingeneric GmbH | Process for the fabrication of optical microstructures |
| FR2875339B1 (en) * | 2004-09-16 | 2006-12-08 | St Microelectronics Sa | MOS TRANSISTOR WITH DEFORMABLE GRID |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0398082A1 (en) * | 1989-05-19 | 1990-11-22 | Siemens Aktiengesellschaft | Method for optical lens production |
| JPH06204183A (en) * | 1992-12-28 | 1994-07-22 | Fuji Electric Co Ltd | Processing method for silicon substrate |
| EP1035423A2 (en) * | 1999-02-19 | 2000-09-13 | Samsung Electronics Co., Ltd. | Micro-lens, combination micro-lens and vertical cavity surface emitting laser, and methods for manufacturing the same |
-
2001
- 2001-07-13 FR FR0109363A patent/FR2827270B1/en not_active Expired - Fee Related
-
2002
- 2002-07-12 WO PCT/FR2002/002488 patent/WO2003007026A1/en not_active Ceased
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0398082A1 (en) * | 1989-05-19 | 1990-11-22 | Siemens Aktiengesellschaft | Method for optical lens production |
| JPH06204183A (en) * | 1992-12-28 | 1994-07-22 | Fuji Electric Co Ltd | Processing method for silicon substrate |
| EP1035423A2 (en) * | 1999-02-19 | 2000-09-13 | Samsung Electronics Co., Ltd. | Micro-lens, combination micro-lens and vertical cavity surface emitting laser, and methods for manufacturing the same |
Non-Patent Citations (2)
| Title |
|---|
| MASUZAWA T ET AL: "New method for three dimensional excimer laser micromachining, Hole Area Modulation (HAM)", CIRP ANN MANUF TECHNOL;CIRP ANNALS - MANUFACTURING TECHNOLOGY 2000 HALLWAG PUBL LTD, BERNE, SWITZERLAND, vol. 49, no. 1, 2000, pages 139 - 142, XP001058187 * |
| PATENT ABSTRACTS OF JAPAN vol. 018, no. 556 (E - 1620) 24 October 1994 (1994-10-24) * |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL1034489C2 (en) * | 2007-10-09 | 2009-04-14 | Micronit Microfluidics Bv | Methods for manufacturing a microstructure. |
| WO2009048321A2 (en) | 2007-10-09 | 2009-04-16 | Micronit Microfluidics B.V. | Methods for manufacturing a microstructure |
| WO2009048321A3 (en) * | 2007-10-09 | 2009-06-04 | Micronit Microfluidics Bv | Methods for manufacturing a microstructure |
| CN105000530A (en) * | 2014-04-25 | 2015-10-28 | 劳力士有限公司 | Process for manufacturing a strengthened timepiece component and corresponding timepiece component and timepiece |
| EP2937311B1 (en) * | 2014-04-25 | 2019-08-21 | Rolex Sa | Method for manufacturing a reinforced timepiece component, corresponding timepiece component and timepiece |
| JP2020082345A (en) * | 2018-11-23 | 2020-06-04 | 株式会社村田製作所 | Method for etching recessed structure |
| JP7060000B2 (en) | 2018-11-23 | 2022-04-26 | 株式会社村田製作所 | Methods for etching recessed structures |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2827270B1 (en) | 2004-01-02 |
| FR2827270A1 (en) | 2003-01-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7662544B2 (en) | Method for manufacturing a master, master, method for manufacturing optical elements and optical element | |
| EP1982217B1 (en) | Production of cavities that can be filled with a fluid material in an optical microtechnological component | |
| EP0660140A1 (en) | Method for making a relief structure on a substrate from semiconductor material | |
| EP1986239B9 (en) | Method for making a matrix for detecting electromagnetic radiation and, in particular, infrared radiation. | |
| WO2005017623A2 (en) | $m(c)method for producing inclined flank patterns by photolithography | |
| EP2769249A1 (en) | Method for producing a refractive or diffractive optical device | |
| FR3059110A1 (en) | OPTICAL DIFFUSER AND METHOD FOR MANUFACTURING THE SAME | |
| WO2003007026A1 (en) | Method for producing microscopic components | |
| CA2457905C (en) | Method for making a colour image sensor with recessed contact apertures prior to thinning | |
| EP3789825B1 (en) | Method for manufacturing a plurality of microparts | |
| EP1439580A1 (en) | Fabrication of fine and narrow-spaced trenches | |
| EP1951610B1 (en) | Method of forming moulds for nano imprinting | |
| FR2803396A1 (en) | METHOD FOR FORMING A CONCAVE MICRORELIEF IN A SUBSTRATE, AND IMPLEMENTATION OF THE METHOD FOR PRODUCING OPTICAL COMPONENTS | |
| US20030038033A1 (en) | Process for fabricating high aspect ratio embossing tool and microstructures | |
| FR2766582A1 (en) | METHOD OF MANUFACTURING OPTICAL COMPONENT AND OPTICAL COMPONENT MANUFACTURED ACCORDING TO THIS METHOD | |
| EP2456625B1 (en) | Method for manufacturing a device with a display element | |
| US20250199200A1 (en) | Metalens assembly and method for manufacturing the same | |
| FR3076658A1 (en) | METHOD FOR ETCHING A CAVITY IN A LAYER STACK | |
| EP4066057B1 (en) | Screen with retroreflecting microstructures | |
| JP2005283814A (en) | Optical element after being subjected antireflection processing and metal mold therefof, and method for manufacturing the metal mold | |
| US20030038105A1 (en) | Tool for embossing high aspect ratio microstructures | |
| EP4617230A1 (en) | Method for manufacturing a timepiece from a base plate | |
| EP2260336B1 (en) | Method of making micron or submicron cavities | |
| EP4283408A1 (en) | Method for manufacturing a clock component | |
| WO2017009564A1 (en) | Stencil and method for manufacturing the stencil |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| AK | Designated states |
Kind code of ref document: A1 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ OM PH PL PT RO RU SD SE SG SI SK SL TJ TM TN TR TT TZ UA UG US UZ VN YU ZA ZM ZW |
|
| AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR IE IT LU MC NL PT SE SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG |
|
| 121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
| DFPE | Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101) | ||
| REG | Reference to national code |
Ref country code: DE Ref legal event code: 8642 |
|
| 122 | Ep: pct application non-entry in european phase | ||
| NENP | Non-entry into the national phase |
Ref country code: JP |
|
| WWW | Wipo information: withdrawn in national office |
Country of ref document: JP |