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WO2003001581A3 - Procedes et dispositif pour le retrait d'un materiau conducteur d'un substrat micro-electronique par voie electrique, mecanique ou chimique - Google Patents

Procedes et dispositif pour le retrait d'un materiau conducteur d'un substrat micro-electronique par voie electrique, mecanique ou chimique Download PDF

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Publication number
WO2003001581A3
WO2003001581A3 PCT/US2002/019495 US0219495W WO03001581A3 WO 2003001581 A3 WO2003001581 A3 WO 2003001581A3 US 0219495 W US0219495 W US 0219495W WO 03001581 A3 WO03001581 A3 WO 03001581A3
Authority
WO
WIPO (PCT)
Prior art keywords
conductive material
microelectronic substrate
electrical
mechanical
methods
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2002/019495
Other languages
English (en)
Other versions
WO2003001581A2 (fr
Inventor
Whonchee Lee
Scott G Meikle
Scott E Moore
Trung T Doan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/888,084 external-priority patent/US7112121B2/en
Priority claimed from US09/888,002 external-priority patent/US7160176B2/en
Priority claimed from US09/887,767 external-priority patent/US7094131B2/en
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Priority to KR1020037016758A priority Critical patent/KR100663662B1/ko
Priority to EP02744464A priority patent/EP1399956A2/fr
Priority to JP2003507878A priority patent/JP4446271B2/ja
Publication of WO2003001581A2 publication Critical patent/WO2003001581A2/fr
Publication of WO2003001581A3 publication Critical patent/WO2003001581A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/046—Lapping machines or devices; Accessories designed for working plane surfaces using electric current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/16—Polishing
    • C25F3/30—Polishing of semiconducting materials
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F5/00—Electrolytic stripping of metallic layers or coatings
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F7/00—Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H01L21/32125—Planarisation by chemical mechanical polishing [CMP] by simultaneously passing an electrical current, i.e. electrochemical mechanical polishing, e.g. ECMP

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Electrochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Engineering (AREA)
  • Weting (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Element Separation (AREA)

Abstract

L'invention se rapporte à un procédé et à un dispositif permettant le retrait d'un matériau conducteur d'un substrat micro-électronique. Dans un mode de réalisation, le procédé peut consister à mettre en contact un substrat micro-électronique avec la surface de polissage d'un tampon de polissage, à coupler électriquement un matériau conducteur du substrat micro-électronique à une source de potentiel électrique, et à oxyder au moins une partie du matériau conducteur par application d'un courant électrique au travers du matériau conducteur à partir de la source de potentiel électrique. Par exemple, le procédé peut consister à disposer une première et une deuxième électrodes de part et d'autre d'une surface faciale d'un substrat micro-électronique, à disposer un fluide électrolytique entre ladite surface faciale et les électrodes, les électrodes étant en communication fluidique avec le fluide électrolytique, et à déplacer au moins le substrat micro-électronique par rapport au tampon de polissage ou inversement.
PCT/US2002/019495 2001-06-21 2002-06-20 Procedes et dispositif pour le retrait d'un materiau conducteur d'un substrat micro-electronique par voie electrique, mecanique ou chimique Ceased WO2003001581A2 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020037016758A KR100663662B1 (ko) 2001-06-21 2002-06-20 마이크로전자 기판으로부터 도전성 물질을 전기적, 기계적 및/또는 화학적으로 제거하기 위한 장치 및 방법
EP02744464A EP1399956A2 (fr) 2001-06-21 2002-06-20 Procedes et dispositif pour le retrait d'un materiau conducteur d'un substrat micro-electronique par voie electrique, mecanique ou chimique
JP2003507878A JP4446271B2 (ja) 2001-06-21 2002-06-20 ミクロ電子基板から導電物質を電気的、機械的および／または化学的に除去する方法および装置

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US09/887,767 2001-06-21
US09/888,084 US7112121B2 (en) 2000-08-30 2001-06-21 Methods and apparatus for electrical, mechanical and/or chemical removal of conductive material from a microelectronic substrate
US09/888,084 2001-06-21
US09/888,002 US7160176B2 (en) 2000-08-30 2001-06-21 Methods and apparatus for electrically and/or chemically-mechanically removing conductive material from a microelectronic substrate
US09/887,767 US7094131B2 (en) 2000-08-30 2001-06-21 Microelectronic substrate having conductive material with blunt cornered apertures, and associated methods for removing conductive material
US09/888,002 2001-06-21

Publications (2)

Publication Number Publication Date
WO2003001581A2 WO2003001581A2 (fr) 2003-01-03
WO2003001581A3 true WO2003001581A3 (fr) 2003-10-30

Family

ID=27420529

Family Applications (2)

Application Number Title Priority Date Filing Date
PCT/US2002/019495 Ceased WO2003001581A2 (fr) 2001-06-21 2002-06-20 Procedes et dispositif pour le retrait d'un materiau conducteur d'un substrat micro-electronique par voie electrique, mecanique ou chimique
PCT/US2002/019496 Ceased WO2003001582A2 (fr) 2001-06-21 2002-06-20 Substrat micro-electronique comportant un materiau conducteur a ouvertures avec coins emousses, et procedes correspondants permettant d'enlever le materiau conducteur

Family Applications After (1)

Application Number Title Priority Date Filing Date
PCT/US2002/019496 Ceased WO2003001582A2 (fr) 2001-06-21 2002-06-20 Substrat micro-electronique comportant un materiau conducteur a ouvertures avec coins emousses, et procedes correspondants permettant d'enlever le materiau conducteur

Country Status (6)

Country Link
EP (2) EP1399957A2 (fr)
JP (2) JP2004531899A (fr)
KR (2) KR100598477B1 (fr)
CN (1) CN100356523C (fr)
AU (1) AU2002316303A1 (fr)
WO (2) WO2003001581A2 (fr)

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6837983B2 (en) 2002-01-22 2005-01-04 Applied Materials, Inc. Endpoint detection for electro chemical mechanical polishing and electropolishing processes
US6962524B2 (en) 2000-02-17 2005-11-08 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US6979248B2 (en) 2002-05-07 2005-12-27 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US6988942B2 (en) 2000-02-17 2006-01-24 Applied Materials Inc. Conductive polishing article for electrochemical mechanical polishing
US6991528B2 (en) 2000-02-17 2006-01-31 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US7029365B2 (en) 2000-02-17 2006-04-18 Applied Materials Inc. Pad assembly for electrochemical mechanical processing
US7059948B2 (en) 2000-12-22 2006-06-13 Applied Materials Articles for polishing semiconductor substrates
US7070475B2 (en) 2002-09-16 2006-07-04 Applied Materials Process control in electrochemically assisted planarization
US7077721B2 (en) 2000-02-17 2006-07-18 Applied Materials, Inc. Pad assembly for electrochemical mechanical processing
US7084064B2 (en) 2004-09-14 2006-08-01 Applied Materials, Inc. Full sequence metal and barrier layer electrochemical mechanical processing
US7112270B2 (en) 2002-09-16 2006-09-26 Applied Materials, Inc. Algorithm for real-time process control of electro-polishing
US7125477B2 (en) 2000-02-17 2006-10-24 Applied Materials, Inc. Contacts for electrochemical processing
US7137879B2 (en) 2001-04-24 2006-11-21 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US7186164B2 (en) 2003-12-03 2007-03-06 Applied Materials, Inc. Processing pad assembly with zone control
US7303662B2 (en) 2000-02-17 2007-12-04 Applied Materials, Inc. Contacts for electrochemical processing
US7303462B2 (en) 2000-02-17 2007-12-04 Applied Materials, Inc. Edge bead removal by an electro polishing process
US7344432B2 (en) 2001-04-24 2008-03-18 Applied Materials, Inc. Conductive pad with ion exchange membrane for electrochemical mechanical polishing
US7390744B2 (en) 2004-01-29 2008-06-24 Applied Materials, Inc. Method and composition for polishing a substrate
US7422982B2 (en) 2006-07-07 2008-09-09 Applied Materials, Inc. Method and apparatus for electroprocessing a substrate with edge profile control
US7427340B2 (en) 2005-04-08 2008-09-23 Applied Materials, Inc. Conductive pad
US7520968B2 (en) 2004-10-05 2009-04-21 Applied Materials, Inc. Conductive pad design modification for better wafer-pad contact

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7374644B2 (en) 2000-02-17 2008-05-20 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US6991526B2 (en) 2002-09-16 2006-01-31 Applied Materials, Inc. Control of removal profile in electrochemically assisted CMP
US7842169B2 (en) 2003-03-04 2010-11-30 Applied Materials, Inc. Method and apparatus for local polishing control
US7998335B2 (en) 2005-06-13 2011-08-16 Cabot Microelectronics Corporation Controlled electrochemical polishing method

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5911619A (en) * 1997-03-26 1999-06-15 International Business Machines Corporation Apparatus for electrochemical mechanical planarization
US6033953A (en) * 1996-12-27 2000-03-07 Texas Instruments Incorporated Method for manufacturing dielectric capacitor, dielectric memory device
US6143155A (en) * 1998-06-11 2000-11-07 Speedfam Ipec Corp. Method for simultaneous non-contact electrochemical plating and planarizing of semiconductor wafers using a bipiolar electrode assembly
US6171467B1 (en) * 1997-11-25 2001-01-09 The John Hopkins University Electrochemical-control of abrasive polishing and machining rates
JP2001077117A (ja) * 1999-09-07 2001-03-23 Sony Corp 半導体装置の製造方法、研磨装置および研磨方法
US20010036746A1 (en) * 2000-03-09 2001-11-01 Shuzo Sato Methods of producing and polishing semiconductor device and polishing apparatus
US20020052126A1 (en) * 2000-08-31 2002-05-02 Whonchee Lee Electro-mechanical polishing of platinum container structure
US20020070126A1 (en) * 2000-09-19 2002-06-13 Shuzo Sato Polishing method, polishing apparatus, plating method, and plating apparatus
WO2002064314A1 (fr) * 2001-02-12 2002-08-22 Speedfam-Ipec Corporation Procédé et appareil de planarisation pour pièces

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01241129A (ja) * 1988-03-23 1989-09-26 Toshiba Corp 半導体装置の製造方法
KR960006714B1 (ko) * 1990-05-28 1996-05-22 가부시끼가이샤 도시바 반도체 장치의 제조 방법
KR100280107B1 (ko) * 1998-05-07 2001-03-02 윤종용 트렌치 격리 형성 방법
US6121152A (en) * 1998-06-11 2000-09-19 Integrated Process Equipment Corporation Method and apparatus for planarization of metallized semiconductor wafers using a bipolar electrode assembly

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6033953A (en) * 1996-12-27 2000-03-07 Texas Instruments Incorporated Method for manufacturing dielectric capacitor, dielectric memory device
US5911619A (en) * 1997-03-26 1999-06-15 International Business Machines Corporation Apparatus for electrochemical mechanical planarization
US6171467B1 (en) * 1997-11-25 2001-01-09 The John Hopkins University Electrochemical-control of abrasive polishing and machining rates
US6143155A (en) * 1998-06-11 2000-11-07 Speedfam Ipec Corp. Method for simultaneous non-contact electrochemical plating and planarizing of semiconductor wafers using a bipiolar electrode assembly
JP2001077117A (ja) * 1999-09-07 2001-03-23 Sony Corp 半導体装置の製造方法、研磨装置および研磨方法
US20010036746A1 (en) * 2000-03-09 2001-11-01 Shuzo Sato Methods of producing and polishing semiconductor device and polishing apparatus
US20020052126A1 (en) * 2000-08-31 2002-05-02 Whonchee Lee Electro-mechanical polishing of platinum container structure
US20020070126A1 (en) * 2000-09-19 2002-06-13 Shuzo Sato Polishing method, polishing apparatus, plating method, and plating apparatus
WO2002064314A1 (fr) * 2001-02-12 2002-08-22 Speedfam-Ipec Corporation Procédé et appareil de planarisation pour pièces

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 20 10 July 2001 (2001-07-10) *

Cited By (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7278911B2 (en) 2000-02-17 2007-10-09 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US7422516B2 (en) 2000-02-17 2008-09-09 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US7569134B2 (en) 2000-02-17 2009-08-04 Applied Materials, Inc. Contacts for electrochemical processing
US6988942B2 (en) 2000-02-17 2006-01-24 Applied Materials Inc. Conductive polishing article for electrochemical mechanical polishing
US6991528B2 (en) 2000-02-17 2006-01-31 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US7029365B2 (en) 2000-02-17 2006-04-18 Applied Materials Inc. Pad assembly for electrochemical mechanical processing
US7285036B2 (en) 2000-02-17 2007-10-23 Applied Materials, Inc. Pad assembly for electrochemical mechanical polishing
US7077721B2 (en) 2000-02-17 2006-07-18 Applied Materials, Inc. Pad assembly for electrochemical mechanical processing
US7344431B2 (en) 2000-02-17 2008-03-18 Applied Materials, Inc. Pad assembly for electrochemical mechanical processing
US7303462B2 (en) 2000-02-17 2007-12-04 Applied Materials, Inc. Edge bead removal by an electro polishing process
US7303662B2 (en) 2000-02-17 2007-12-04 Applied Materials, Inc. Contacts for electrochemical processing
US7125477B2 (en) 2000-02-17 2006-10-24 Applied Materials, Inc. Contacts for electrochemical processing
US7137868B2 (en) 2000-02-17 2006-11-21 Applied Materials, Inc. Pad assembly for electrochemical mechanical processing
US7207878B2 (en) 2000-02-17 2007-04-24 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US6962524B2 (en) 2000-02-17 2005-11-08 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US7059948B2 (en) 2000-12-22 2006-06-13 Applied Materials Articles for polishing semiconductor substrates
US7344432B2 (en) 2001-04-24 2008-03-18 Applied Materials, Inc. Conductive pad with ion exchange membrane for electrochemical mechanical polishing
US7311592B2 (en) 2001-04-24 2007-12-25 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US7137879B2 (en) 2001-04-24 2006-11-21 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US6837983B2 (en) 2002-01-22 2005-01-04 Applied Materials, Inc. Endpoint detection for electro chemical mechanical polishing and electropolishing processes
US6979248B2 (en) 2002-05-07 2005-12-27 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US7070475B2 (en) 2002-09-16 2006-07-04 Applied Materials Process control in electrochemically assisted planarization
US7112270B2 (en) 2002-09-16 2006-09-26 Applied Materials, Inc. Algorithm for real-time process control of electro-polishing
US7294038B2 (en) 2002-09-16 2007-11-13 Applied Materials, Inc. Process control in electrochemically assisted planarization
US7628905B2 (en) 2002-09-16 2009-12-08 Applied Materials, Inc. Algorithm for real-time process control of electro-polishing
US7186164B2 (en) 2003-12-03 2007-03-06 Applied Materials, Inc. Processing pad assembly with zone control
US7390744B2 (en) 2004-01-29 2008-06-24 Applied Materials, Inc. Method and composition for polishing a substrate
US7084064B2 (en) 2004-09-14 2006-08-01 Applied Materials, Inc. Full sequence metal and barrier layer electrochemical mechanical processing
US7446041B2 (en) 2004-09-14 2008-11-04 Applied Materials, Inc. Full sequence metal and barrier layer electrochemical mechanical processing
US7520968B2 (en) 2004-10-05 2009-04-21 Applied Materials, Inc. Conductive pad design modification for better wafer-pad contact
US7427340B2 (en) 2005-04-08 2008-09-23 Applied Materials, Inc. Conductive pad
US7422982B2 (en) 2006-07-07 2008-09-09 Applied Materials, Inc. Method and apparatus for electroprocessing a substrate with edge profile control

Also Published As

Publication number Publication date
JP4446271B2 (ja) 2010-04-07
AU2002316303A1 (en) 2003-01-08
CN1516894A (zh) 2004-07-28
KR20040021616A (ko) 2004-03-10
KR100598477B1 (ko) 2006-07-11
JP2004531899A (ja) 2004-10-14
JP2004531649A (ja) 2004-10-14
WO2003001582A2 (fr) 2003-01-03
KR100663662B1 (ko) 2007-01-03
CN100356523C (zh) 2007-12-19
EP1399957A2 (fr) 2004-03-24
EP1399956A2 (fr) 2004-03-24
KR20040010773A (ko) 2004-01-31
WO2003001582A3 (fr) 2003-10-30
WO2003001581A2 (fr) 2003-01-03

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