[go: up one dir, main page]

WO2003096769A1 - Systeme de traitement par reaction haute frequence - Google Patents

Systeme de traitement par reaction haute frequence Download PDF

Info

Publication number
WO2003096769A1
WO2003096769A1 PCT/JP2003/005662 JP0305662W WO03096769A1 WO 2003096769 A1 WO2003096769 A1 WO 2003096769A1 JP 0305662 W JP0305662 W JP 0305662W WO 03096769 A1 WO03096769 A1 WO 03096769A1
Authority
WO
WIPO (PCT)
Prior art keywords
high frequency
outer container
processing system
coupling section
reaction processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2003/005662
Other languages
English (en)
Japanese (ja)
Inventor
Toshiyuki Takamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to US10/513,427 priority Critical patent/US20050212626A1/en
Priority to JP2004508507A priority patent/JP3637397B2/ja
Publication of WO2003096769A1 publication Critical patent/WO2003096769A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/12—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electromagnetic waves
    • B01J19/122—Incoherent waves
    • B01J19/126—Microwaves
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/12—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electromagnetic waves
    • B01J19/122—Incoherent waves
    • B01J19/129—Radiofrequency

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Cleaning In General (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

L'invention concerne un système de traitement par réaction haute fréquence, comprenant un contenant extérieur (40) constitué d'un matériau diélectrique et possédant deux faces d'extrémité fermant la cavité intérieure, une ou plusieurs sections de couplage haute fréquence (42) disposées à une position arbitraire sur la surface extérieure du contenant extérieur (40), un ou plusieurs contenants intérieurs (41) constitués d'un matériau diélectrique et possédant chacun deux faces d'extrémité fermant la cavité intérieure, ces contenants intérieurs étant disposés de façon à recevoir une onde haute fréquence arrivant par la section de couplage haute fréquence (42) sans toucher la face latérale intérieure du contenant extérieur (40), ainsi qu'une partie (43) en matériau conducteur destinée à recouvrir la surface extérieure du contenant extérieur à l'exception de la partie pourvue de la section de couplage haute fréquence (42), le potentiel étant maintenu à un niveau égal au potentiel de terre d'une ligne haute fréquence.
PCT/JP2003/005662 2002-05-07 2003-05-06 Systeme de traitement par reaction haute frequence Ceased WO2003096769A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US10/513,427 US20050212626A1 (en) 2002-05-07 2003-05-06 High frequency reaction processing system
JP2004508507A JP3637397B2 (ja) 2002-05-07 2003-05-06 高周波反応処理装置

Applications Claiming Priority (10)

Application Number Priority Date Filing Date Title
JP2002-167849 2002-05-07
JP2002167849 2002-05-07
JP2002-167850 2002-05-07
JP2002167850 2002-05-07
JP2002307627 2002-09-17
JP2002-307627 2002-09-17
JP2002-307626 2002-09-17
JP2002307626 2002-09-17
JP2003-38959 2003-01-14
JP2003038959 2003-01-14

Publications (1)

Publication Number Publication Date
WO2003096769A1 true WO2003096769A1 (fr) 2003-11-20

Family

ID=29424811

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2003/005662 Ceased WO2003096769A1 (fr) 2002-05-07 2003-05-06 Systeme de traitement par reaction haute frequence

Country Status (2)

Country Link
JP (1) JP3637397B2 (fr)
WO (1) WO2003096769A1 (fr)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007520880A (ja) * 2004-01-12 2007-07-26 アクセリス テクノロジーズ インコーポレーテッド プラズマリアクター用のガス分配プレートアセンブリ
JP2008177131A (ja) * 2007-01-22 2008-07-31 Shibaura Mechatronics Corp プラズマ発生装置、プラズマ処理装置及びプラズマ処理方法
JP2013134837A (ja) * 2011-12-26 2013-07-08 Tokyo Electron Ltd プラズマ生成装置及びプラズマ処理装置
JP2014524106A (ja) * 2011-06-24 2014-09-18 リカーボン，インコーポレイテッド マイクロ波共鳴空洞
JP2015128742A (ja) * 2014-01-07 2015-07-16 マイクロ波化学株式会社 化学反応装置、及び化学反応方法
JP2015142904A (ja) * 2014-11-13 2015-08-06 マイクロ波化学株式会社 化学反応装置、及び化学反応方法
KR101614028B1 (ko) 2013-05-27 2016-04-20 가부시키가이샤 아도테쿠 프라즈마 테쿠노로지 마이크로파 플라즈마 발생장치의 공동 공진기
JP2016520797A (ja) * 2013-03-13 2016-07-14 ラドム コーポレイションＲａｄｏｍ Ｃｏｒｐｏｒａｔｉｏｎ 誘電体共振器を使用するマイクロ波プラズマ分光計
US10337998B2 (en) 2017-02-17 2019-07-02 Radom Corporation Plasma generator assembly for mass spectroscopy
JPWO2021192810A1 (fr) * 2020-03-23 2021-09-30
WO2024024817A1 (fr) * 2022-07-27 2024-02-01 株式会社アビット・テクノロジーズ Dispositif de génération de plasma à micro-ondes, dispositif de traitement au plasma à micro-ondes et procédé de traitement au plasma à micro-ondes
WO2025022605A1 (fr) * 2023-07-26 2025-01-30 株式会社アビット・テクノロジーズ Dispositif de génération de plasma à micro-ondes, dispositif de traitement au plasma à micro-ondes et procédé de traitement au plasma à micro-ondes

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115767868A (zh) * 2022-11-02 2023-03-07 南方科技大学 射流激发装置及射流激发系统

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6471097A (en) * 1987-09-10 1989-03-16 Mitsubishi Electric Corp Plasma device
US5082517A (en) * 1990-08-23 1992-01-21 Texas Instruments Incorporated Plasma density controller for semiconductor device processing equipment
US5235251A (en) * 1991-08-09 1993-08-10 The United States Of America As Represented By The Secretary Of The Air Force Hydraulic fluid cooling of high power microwave plasma tubes
US5262610A (en) * 1991-03-29 1993-11-16 The United States Of America As Represented By The Air Force Low particulate reliability enhanced remote microwave plasma discharge device
JPH0760111A (ja) * 1993-08-26 1995-03-07 Toshiba Corp 光反応装置
JPH09115894A (ja) * 1995-07-10 1997-05-02 Applied Materials Inc マイクロ波プラズマベースアプリケータ
JPH09312285A (ja) * 1996-02-14 1997-12-02 Applied Materials Inc 二重壁式マイクロ波プラズマアプリケータ
JP2000260596A (ja) * 1999-03-11 2000-09-22 Hitachi Ltd プラズマ装置
JP2003096570A (ja) * 2001-09-20 2003-04-03 Kobe Steel Ltd プラズマ処理方法及び装置
JP2003159314A (ja) * 2001-11-27 2003-06-03 Hitachi Ltd 紫外線殺菌処理装置

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6471097A (en) * 1987-09-10 1989-03-16 Mitsubishi Electric Corp Plasma device
US5082517A (en) * 1990-08-23 1992-01-21 Texas Instruments Incorporated Plasma density controller for semiconductor device processing equipment
US5262610A (en) * 1991-03-29 1993-11-16 The United States Of America As Represented By The Air Force Low particulate reliability enhanced remote microwave plasma discharge device
US5235251A (en) * 1991-08-09 1993-08-10 The United States Of America As Represented By The Secretary Of The Air Force Hydraulic fluid cooling of high power microwave plasma tubes
JPH0760111A (ja) * 1993-08-26 1995-03-07 Toshiba Corp 光反応装置
JPH09115894A (ja) * 1995-07-10 1997-05-02 Applied Materials Inc マイクロ波プラズマベースアプリケータ
JPH09312285A (ja) * 1996-02-14 1997-12-02 Applied Materials Inc 二重壁式マイクロ波プラズマアプリケータ
JP2000260596A (ja) * 1999-03-11 2000-09-22 Hitachi Ltd プラズマ装置
JP2003096570A (ja) * 2001-09-20 2003-04-03 Kobe Steel Ltd プラズマ処理方法及び装置
JP2003159314A (ja) * 2001-11-27 2003-06-03 Hitachi Ltd 紫外線殺菌処理装置

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007520880A (ja) * 2004-01-12 2007-07-26 アクセリス テクノロジーズ インコーポレーテッド プラズマリアクター用のガス分配プレートアセンブリ
JP2008177131A (ja) * 2007-01-22 2008-07-31 Shibaura Mechatronics Corp プラズマ発生装置、プラズマ処理装置及びプラズマ処理方法
JP2014524106A (ja) * 2011-06-24 2014-09-18 リカーボン，インコーポレイテッド マイクロ波共鳴空洞
JP2013134837A (ja) * 2011-12-26 2013-07-08 Tokyo Electron Ltd プラズマ生成装置及びプラズマ処理装置
US10863611B2 (en) 2013-03-13 2020-12-08 Radom Corporation Microwave plasma spectrometer using dielectric resonator
JP2016520797A (ja) * 2013-03-13 2016-07-14 ラドム コーポレイションＲａｄｏｍ Ｃｏｒｐｏｒａｔｉｏｎ 誘電体共振器を使用するマイクロ波プラズマ分光計
JP2016522533A (ja) * 2013-03-13 2016-07-28 ラドム コーポレイションＲａｄｏｍ Ｃｏｒｐｏｒａｔｉｏｎ 誘電体共振器を使用するプラズマ発生器
US10285256B2 (en) 2013-03-13 2019-05-07 Radom Corporation Microwave plasma spectrometer using dielectric resonator
KR101614028B1 (ko) 2013-05-27 2016-04-20 가부시키가이샤 아도테쿠 프라즈마 테쿠노로지 마이크로파 플라즈마 발생장치의 공동 공진기
JP2015128742A (ja) * 2014-01-07 2015-07-16 マイクロ波化学株式会社 化学反応装置、及び化学反応方法
JP2015142904A (ja) * 2014-11-13 2015-08-06 マイクロ波化学株式会社 化学反応装置、及び化学反応方法
US10337998B2 (en) 2017-02-17 2019-07-02 Radom Corporation Plasma generator assembly for mass spectroscopy
US10900907B2 (en) 2017-02-17 2021-01-26 Radom Corporation Portable plasma source for optical spectroscopy
JPWO2021192810A1 (fr) * 2020-03-23 2021-09-30
WO2021192810A1 (fr) * 2020-03-23 2021-09-30 株式会社エス・エス・ティ Dispositif de traitement par réaction à haute fréquence et système de traitement par réaction à haute fréquence
CN115336395A (zh) * 2020-03-23 2022-11-11 Sst有限公司 高频反应处理装置与高频反应处理系统
JP7289170B2 (ja) 2020-03-23 2023-06-09 株式会社エス・エス・ティ 高周波反応処理装置および高周波反応処理システム
CN115336395B (zh) * 2020-03-23 2025-07-01 Sst有限公司 高频反应处理装置与高频反应处理系统
WO2024024817A1 (fr) * 2022-07-27 2024-02-01 株式会社アビット・テクノロジーズ Dispositif de génération de plasma à micro-ondes, dispositif de traitement au plasma à micro-ondes et procédé de traitement au plasma à micro-ondes
WO2025022605A1 (fr) * 2023-07-26 2025-01-30 株式会社アビット・テクノロジーズ Dispositif de génération de plasma à micro-ondes, dispositif de traitement au plasma à micro-ondes et procédé de traitement au plasma à micro-ondes

Also Published As

Publication number Publication date
JPWO2003096769A1 (ja) 2005-09-15
JP3637397B2 (ja) 2005-04-13

Similar Documents

Publication Publication Date Title
WO2003096769A1 (fr) Systeme de traitement par reaction haute frequence
WO2001073892A3 (fr) Antenne ou antenne reseau, a rayonnement longitudinal, dotee d'une impedance reglable
AU2001276986A1 (en) Tunable microwave devices with auto-adjusting matching circuit
EP1119111A4 (fr) Isolateur a amplificateur de puissance integre
EP1109251A3 (fr) Unité d'antenne et appareil de communication l'utilisant
AU1746901A (en) An antenna device, a communication device comprising such an antenna device and a method of operating the communication device
EP1049193A3 (fr) Composant électronique, résonateur diélectrique, filtre diélectrique, duplexeur et dispositif de communication
AU2000263509A1 (en) Impedance tuned termination assembly and connectors incorporating same
WO2002016973A3 (fr) Dispositifs electroniques et optiques et procedes de realisation
AU2001271788A1 (en) Hydrophobic coating with dlc and fas on substrate
AU1868401A (en) Antenna provided with an assembly of filtering materials
WO2005043670A3 (fr) Dispositif de communication dote d'un systeme d'antenne interne
AU2001268242A1 (en) Electrically shielded connector
DE60331205D1 (de) h eine Wand
AU2415500A (en) Conductive leads with non-wettable surfaces
EP1589603A3 (fr) Dispositif diélectrique
WO2008068351A3 (fr) Tube electronique a cathode froide a commande optique
EP2077603A3 (fr) Antenne rayonnante diélectrique à fuites
AU4702699A (en) Pivotable multiple frequency band antenna with capacitive coupling
WO2002071533A8 (fr) Transition de ligne microruban
AU2001273465A1 (en) Integrated tunable surface acoustic wave technology and systems provided thereby
WO1998033243A3 (fr) Connecteur enfichable coaxial hf
WO2004051787A3 (fr) Couplage accordable
AU1701200A (en) Dielectric waveguide microwave sensor
WO2003061065A8 (fr) Antenne en double f inverses

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): CN JP KR US

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT RO SE SI SK TR

DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 2004508507

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 10513427

Country of ref document: US

122 Ep: pct application non-entry in european phase