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WO2003085747A3 - Method for the electrodeposition of a material belonging to column iv - Google Patents

Method for the electrodeposition of a material belonging to column iv Download PDF

Info

Publication number
WO2003085747A3
WO2003085747A3 PCT/FR2003/000977 FR0300977W WO03085747A3 WO 2003085747 A3 WO2003085747 A3 WO 2003085747A3 FR 0300977 W FR0300977 W FR 0300977W WO 03085747 A3 WO03085747 A3 WO 03085747A3
Authority
WO
WIPO (PCT)
Prior art keywords
column
electrode
electrodeposition
reactor
nickel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/FR2003/000977
Other languages
French (fr)
Other versions
WO2003085747A2 (en
Inventor
Remi Colin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to EP03740537A priority Critical patent/EP1493192A2/en
Priority to AU2003260703A priority patent/AU2003260703A1/en
Publication of WO2003085747A2 publication Critical patent/WO2003085747A2/en
Publication of WO2003085747A3 publication Critical patent/WO2003085747A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1221—The active layers comprising only Group IV materials comprising polycrystalline silicon
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D9/00—Electrolytic coating other than with metals
    • C25D9/04—Electrolytic coating other than with metals with inorganic materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Manufacture And Refinement Of Metals (AREA)

Abstract

The invention concerns a method involving a reactor (1) wherein is deposited a material, belonging to column IV of the periodic table, said reactor (1) consisting of a closed chamber (2), containing an aqueous medium (3), consisting of distilled water, heating elements (4), a first electrode (7) constituting the material to be deposited, and a second electrode (9) constituting the metal support, copper or nickel, designed to receive the layer of the material and a third metal electrode (8), copper or nickel, designed to apply an electric field inside the chamber.
PCT/FR2003/000977 2002-04-05 2003-03-27 Method for the electrodeposition of a material belonging to column iv Ceased WO2003085747A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP03740537A EP1493192A2 (en) 2002-04-05 2003-03-27 Method for depositing a material belonging to column iv of the periodic table, in aqueous medium on a conductive or semiconductive support
AU2003260703A AU2003260703A1 (en) 2002-04-05 2003-03-27 Method for the electrodeposition of a material belonging to column iv

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR02/04368 2002-04-05
FR0204368A FR2838236B1 (en) 2002-04-05 2002-04-05 PROCESS FOR DEPOSITION OF POLYCRYSTALLINE SILICUM IN AQUEOUS MEDIUM ON A CONDUCTIVE OR SEMICONDUCTOR SUPPORT

Publications (2)

Publication Number Publication Date
WO2003085747A2 WO2003085747A2 (en) 2003-10-16
WO2003085747A3 true WO2003085747A3 (en) 2004-04-01

Family

ID=28052210

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/FR2003/000977 Ceased WO2003085747A2 (en) 2002-04-05 2003-03-27 Method for the electrodeposition of a material belonging to column iv

Country Status (4)

Country Link
EP (1) EP1493192A2 (en)
AU (1) AU2003260703A1 (en)
FR (1) FR2838236B1 (en)
WO (1) WO2003085747A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100570916C (en) 2005-05-30 2009-12-16 松下电器产业株式会社 Thermoelectric conversion material, thermoelectric conversion element using the same, and electronic equipment and cooling device having the same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4341610A (en) * 1978-06-22 1982-07-27 Schumacher John C Energy efficient process for continuous production of thin semiconductor films on metallic substrates
US4571328A (en) * 1982-09-24 1986-02-18 Teknico Industries, Inc. Aqueous hydrides
US5462723A (en) * 1993-10-01 1995-10-31 Coralplex, Inc. Aqueous hydrides and method of manufacture therefore

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4341610A (en) * 1978-06-22 1982-07-27 Schumacher John C Energy efficient process for continuous production of thin semiconductor films on metallic substrates
US4571328A (en) * 1982-09-24 1986-02-18 Teknico Industries, Inc. Aqueous hydrides
US5462723A (en) * 1993-10-01 1995-10-31 Coralplex, Inc. Aqueous hydrides and method of manufacture therefore

Also Published As

Publication number Publication date
WO2003085747A2 (en) 2003-10-16
AU2003260703A1 (en) 2003-10-20
FR2838236B1 (en) 2004-07-30
FR2838236A1 (en) 2003-10-10
AU2003260703A8 (en) 2003-10-20
EP1493192A2 (en) 2005-01-05

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