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WO2003076118A1 - Substrat semi-conducteur, puce a semi-conducteur et procede de fabrication d'un dispositif a semi-conducteur - Google Patents

Substrat semi-conducteur, puce a semi-conducteur et procede de fabrication d'un dispositif a semi-conducteur Download PDF

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Publication number
WO2003076118A1
WO2003076118A1 PCT/JP2003/002866 JP0302866W WO03076118A1 WO 2003076118 A1 WO2003076118 A1 WO 2003076118A1 JP 0302866 W JP0302866 W JP 0302866W WO 03076118 A1 WO03076118 A1 WO 03076118A1
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WO
WIPO (PCT)
Prior art keywords
semiconductor substrate
region
cutting
semiconductor
modified region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2003/002866
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English (en)
Japanese (ja)
Inventor
Fumitsugu Fukuyo
Kenshi Fukumitsu
Naoki Uchiyama
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Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Priority to AU2003211575A priority Critical patent/AU2003211575A1/en
Priority to JP2003574373A priority patent/JP4509573B2/ja
Publication of WO2003076118A1 publication Critical patent/WO2003076118A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26

Definitions

  • the present invention relates to a semiconductor substrate, a semiconductor chip, and a method for manufacturing a semiconductor device that are suitably used for manufacturing a semiconductor device.
  • the semiconductor substrate is cut (cutting) into functional elements by a diamond blade to obtain a semiconductor chip. It is common.
  • the semiconductor substrate may be cut by heating and melting by irradiating the semiconductor substrate with laser light having absorptivity to the semiconductor substrate (heating and melting process).
  • the functional element since the cutting of the semiconductor substrate by the above-described cutting process or heat melting process is performed after the functional element is formed on the semiconductor substrate, the functional element may be destroyed due to, for example, heat generated at the time of cutting.
  • the present invention has been made in view of such circumstances, and a semiconductor substrate and a semiconductor chip that can prevent a functional element from being destroyed by cutting in a manufacturing process of a semiconductor device And a method of manufacturing a semiconductor device.
  • the semiconductor substrate according to the present invention has an internal cutting origin region by a modified region formed by multiphoton absorption formed at the position of a condensing point of the laser beam by irradiation of the laser beam. It is characterized by being formed.
  • the modified region by multiphoton absorption formed at the position of the condensing point of the laser beam by the irradiation of the laser beam is formed inside the semiconductor substrate. That is, in this modified region, the condensing point of the laser beam is set inside the semiconductor substrate, When a phenomenon called multiphoton absorption occurs at the position of the light condensing point, it is formed inside the semiconductor substrate. In laser light irradiation that can generate multiphoton absorption, the surface of the semiconductor substrate is not melted because the laser light is hardly absorbed by the surface of the semiconductor substrate. Therefore, in the semiconductor device manufacturing process, the functional element can be formed on the surface of the semiconductor substrate as before.
  • the cutting start region is formed inside the semiconductor substrate by the modified region. If a modified region is formed inside the semiconductor substrate, the semiconductor substrate cracks with a relatively small force starting from the modified region. Therefore, the semiconductor substrate is divided and cut along the cutting origin region with high accuracy. can do. Therefore, in the semiconductor device manufacturing process, the conventional cutting and heating / melting after forming the functional element are not required, and the functional element can be prevented from being broken by cutting the semiconductor substrate.
  • the condensing point is a portion where the laser beam is condensed.
  • the functional element means a light receiving element such as a photodiode, a light emitting element such as a laser diode, or a circuit element formed as a circuit.
  • the cutting starting point region means a region that becomes a starting point of cutting when the semiconductor substrate is cut. Accordingly, the cutting start region is a planned cutting portion where cutting is planned in the semiconductor substrate.
  • the cut starting point region may be formed by continuously forming the modified region, or may be formed by intermittently forming the modified region.
  • the semiconductor substrate according to the present invention can be obtained by irradiation with laser light under the condition that the peak power density at the focal point is 1 ⁇ 10 8 (W / cm 2 ) or more and the pulse width is 1 ⁇ s or less.
  • the cutting starting point region is formed inside by the modified region including the melt processing region formed at the position of the condensing point of the laser beam.
  • the peak power density at the focal point is 1 X 1 0 8 (w
  • a modified region including a melt-processed region formed at the position of the condensing point of the laser beam by irradiation with the laser beam under a condition where the pulse width is 1 ⁇ s or less is a semiconductor substrate. It is formed inside. In other words, this melting process area is focused on the laser beam.
  • the dots are aligned inside the semiconductor substrate, and a phenomenon called multiphoton absorption occurs at the position of the condensing point and is locally heated to form the inside of the semiconductor substrate. Since this melting region is an example of the above-described modified region, even with this semiconductor substrate, functional elements can be formed on the surface of the semiconductor substrate in the manufacturing process of the semiconductor device, and the function can be achieved. It is possible to prevent functional elements from being destroyed by cutting the semiconductor substrate after the elements are formed.
  • the semiconductor substrate according to the present invention is characterized in that a cutting start region is formed inside by a modified region formed at the position of a condensing point of the laser beam by irradiation of the laser beam. This reformed region may be a melted region.
  • the functional element can be formed on the surface of the semiconductor substrate in the manufacturing process of the semiconductor device for the same reason as the semiconductor substrate according to the present invention described above, and after the functional element is formed. It is possible to prevent the functional element from being broken by cutting the semiconductor substrate.
  • the formation of the modified region may be due to multiphoton absorption or may be due to others.
  • the semiconductor substrate according to the present invention is characterized in that it has an outer edge portion along the outer edge, and a cutting start region is formed by a modified region inside an inner portion of the outer edge portion.
  • the functional element can be formed on the surface of the semiconductor substrate in the manufacturing process of the semiconductor device for the same reason as the semiconductor substrate according to the present invention described above, and after the functional element is formed. It is possible to prevent the functional element from being broken by cutting the semiconductor substrate.
  • a cutting start area inside the inner part of the outer edge of the semiconductor substrate, it is possible to prevent unintentional cutting of the semiconductor substrate in the semiconductor substrate transport process and the heating process for functional element formation.
  • the cutting start area is formed in a lattice shape, and is partitioned by the cutting start area. Among the divided sections, it is preferable that the cutting start area intersects at the corner portion of the section located on the outer edge side.
  • “lattice” means not only the case where the cutting start regions extending in two orthogonal directions intersect, but also the case where the cutting starting regions extending in two different directions intersect. Crossing is not limited to the case where cutting origin areas along two different directions intersect each other directly, but also when cutting origin areas along two different directions intersect three-dimensionally (that is, in a twisting relationship) In the case of).
  • an identification mark for identifying the position of the cutting start region formed inside the semiconductor substrate is provided on the surface of the semiconductor substrate.
  • an identification mark for identifying the position of the cutting start area is provided on the surface of the semiconductor substrate. Therefore, in the semiconductor device manufacturing process, It is possible to grasp the position of the cutting start region formed inside based on the recognition mark and perform patterning of the functional element to cut the semiconductor substrate or the like.
  • a semiconductor chip according to the present invention forms a modified region by multiphoton absorption inside a semiconductor substrate by irradiating a laser beam with a converging point inside the semiconductor substrate.
  • the modified region is formed by cutting the semiconductor substrate using the modified region as a starting point region, and has a modified region on the cut surface by the cutting.
  • the cut surface is protected by the modified region, it is possible to prevent occurrence of chipping and cracking on the cut surface. Furthermore, when the peripheral edge of the semiconductor chip is surrounded by the cut surface, the peripheral edge of the semiconductor chip The part is surrounded by the modified region, whereby the bending strength of the semiconductor chip can be improved.
  • the semiconductor chip according to the present invention has a condensing point inside the semiconductor substrate, the peak power density at the condensing point is 1 X 10 8 (W / cm 2 ) or more and the pulse is 1 ⁇ s or less.
  • a modified region including a melt-processed region is formed inside the semiconductor substrate, and the semiconductor substrate is cut using the modified region including the melt-processed region as a cutting start region. It is formed and has a modified region including a melt-processed region on a cut surface by cutting.
  • melt processing region in this semiconductor chip is an example of the above-described modified region, it is possible to prevent the occurrence of chipping and cracking on the cut surface and also the peripheral portion of the semiconductor chip is the cut surface. When surrounded by, the bending strength of the semiconductor chip can be improved.
  • the semiconductor chip according to the present invention forms a modified region in the semiconductor substrate by aligning the condensing point inside the semiconductor substrate and irradiating the laser beam, and cutting the modified region as a starting point. It is formed by cutting a semiconductor substrate as a region, and has a modified region on a cut surface by cutting. In some cases, the reformed region is a melt-treated region.
  • the semiconductor chip for the same reason as the semiconductor chip according to the present invention described above, it is possible to prevent the occurrence of chipping and cracking on the cut surface, and the periphery of the semiconductor chip is surrounded by the cut surface. If it is, the bending strength of the semiconductor chip can be improved.
  • the formation of the modified region may be caused by multiphoton absorption or may be caused by others.
  • the semiconductor chip according to the present invention is characterized in that a modified region including a melt processing region is formed on an end face.
  • this semiconductor chip it is possible to prevent occurrence of chipping and cracking at an end face such as a cut surface due to cutting of a semiconductor substrate. If the peripheral edge of the semiconductor chip is surrounded by a modified region, the bending strength of the semiconductor chip can be improved.
  • the method for manufacturing a semiconductor device irradiates a laser beam with a condensing point inside the semiconductor substrate, and forms a modified region by multiphoton absorption inside the semiconductor substrate.
  • a functional element is formed on the semiconductor substrate after the step of forming the cutting origin region within a predetermined distance from the laser light incident surface of the semiconductor substrate along the planned cutting line of the semiconductor substrate and the step of forming the cutting origin region.
  • the semiconductor device manufacturing method includes irradiating a laser beam with a converging point inside the semiconductor substrate, forming a modified region inside the semiconductor substrate, and using this modified region, the semiconductor substrate Forming a cutting start region within a predetermined distance from the laser light incident surface of the semiconductor substrate along a predetermined cutting line of the semiconductor substrate, a step of forming a functional element on the semiconductor substrate after the step of forming the cutting start region, and a functional device And a step of cutting the semiconductor substrate along the cutting start region after the step of forming the substrate.
  • the reformed region is a melt-processed region.
  • FIG. 1 is a plan view of a semiconductor substrate during laser processing by the laser processing method according to the present embodiment.
  • FIG. 2 is a cross-sectional view of the semiconductor substrate shown in FIG.
  • FIG. 3 is a plan view of the semiconductor substrate after laser processing by the laser processing method according to the present embodiment.
  • FIG. 4 is a cross-sectional view taken along line IV-IV of the semiconductor substrate shown in FIG.
  • FIG. 5 is a cross-sectional view taken along line V—V of the semiconductor substrate shown in FIG.
  • FIG. 6 is a plan view of a semiconductor substrate cut by the laser processing method according to this embodiment.
  • FIG. 7 shows a silicon wafer cut by the laser processing method according to this embodiment.
  • FIG. 8 is a graph showing the relationship between the wavelength of the laser beam and the transmittance of the collar portion of the silicon substrate in the laser processing method according to the present embodiment.
  • FIG. 9 is a schematic configuration diagram of a laser processing apparatus according to the present embodiment.
  • FIG. 10 is a perspective view of the semiconductor substrate according to the first embodiment.
  • FIG. 11 is a sectional view taken along line XI-XI of the semiconductor substrate shown in FIG.
  • FIG. 12 is a cross-sectional view taken along the line XII-XII of the semiconductor substrate shown in FIG.
  • FIG. 13 shows a photograph of a laser mark provided on the surface of the semiconductor substrate shown in FIG.
  • FIG. 14 is a flowchart for explaining the method of manufacturing the semiconductor substrate according to the first embodiment.
  • FIG. 15 is a plan view of the semiconductor substrate according to the second embodiment.
  • FIG. 16 is an enlarged view of a main part of the semiconductor substrate shown in FIG.
  • FIG. 17 is a plan view for explaining the method of manufacturing the semiconductor substrate shown in FIG. 15.
  • FIG. 18 is a cross-sectional view of the semiconductor substrate shown in FIG. 15 taken along line XVIII-XVIII.
  • FIG. 19 is a perspective view of the semiconductor chip according to the example.
  • the semiconductor substrate is irradiated with laser light with the focusing point aligned inside, and a modified region by multiphoton absorption is formed in the ridge of the semiconductor substrate.
  • the laser processing method is used. This laser processing method, particularly multiphoton absorption, will be described first.
  • the intensity of the laser beam is determined by the peak power density (W / cm 2 ) at the condensing point of the laser beam. For example, the intensity of the laser beam is high when the peak power density is 1 X 10 8 (W / cm 2 ) or more. Photon absorption occurs.
  • the peak power density can be calculated by (Energy per pulse of laser beam at the focal point) ⁇ (Laser beam beam spot cross-sectional area X pulse width).
  • the intensity of the laser beam is determined by the electric field strength (WZ cm 2 ) at the condensing point of the laser beam.
  • FIGS. Fig. 1 is a plan view of the semiconductor substrate 1 during laser processing
  • Fig. 2 is a cross-sectional view of the semiconductor substrate 1 shown in Fig. 1 along the line II-II
  • Fig. 3 is a diagram of the semiconductor substrate 1 after laser processing.
  • 4 is a cross-sectional view taken along line IV-IV of semiconductor substrate 1 shown in FIG. 3
  • FIG. 5 is a cross-sectional view taken along line V-V of semiconductor substrate 1 shown in FIG.
  • FIG. 6 is a plan view of the cut semiconductor substrate 1.
  • the surface 3 of the semiconductor substrate 1 has a desired cutting line 5 for cutting the semiconductor substrate 1.
  • the planned cutting line 5 is a virtual line extending in a straight line (the actual cutting line 5 may be used as the planned cutting line 5 on the semiconductor substrate 1).
  • the modified region 7 is formed by irradiating the semiconductor substrate 1 with the laser beam L by aligning the condensing point P inside the semiconductor substrate 1 under the condition that multiphoton absorption occurs.
  • the condensing point is a portion where the laser beam L is condensed.
  • the condensing point P is moved along the planned cutting line 5.
  • the modified region 7 is formed only inside the semiconductor substrate 1 along the planned cutting line 5 as shown in FIGS. 3 to 5, and the cutting start region (scheduled cutting portion) is formed by the modified region 7. 9 is formed.
  • the semiconductor substrate 1 is The modified region 7 is not formed by absorbing the laser beam L and causing the semiconductor substrate 1 to generate heat.
  • the laser beam L is transmitted through the semiconductor substrate 1 and multiphoton absorption is generated inside the semiconductor substrate 1 to form the modified region 7. Therefore, since the laser beam L is hardly absorbed at the surface 3 of the semiconductor substrate 1, the surface 3 of the semiconductor substrate 1 is not melted.
  • the semiconductor substrate 1 When the semiconductor substrate 1 is cut, if there is a starting point at the location to be cut, the semiconductor substrate 1 is cracked from the starting point, so that the semiconductor substrate 1 can be cut with a relatively small force as shown in FIG. Therefore, the semiconductor substrate 1 can be cut without causing unnecessary cracks in the surface 3 of the semiconductor substrate 1.
  • An artificial force is applied, for example, by applying bending stress or shear stress to the semiconductor substrate along the cutting start region of the semiconductor substrate, or generating thermal stress by giving a temperature difference to the semiconductor substrate. It is to be.
  • the other one is to form a cutting start region, so that it naturally breaks in the cross-sectional direction (thickness direction) of the semiconductor substrate starting from the cutting start region, resulting in the semiconductor substrate being cut Is the case.
  • the cutting start region is formed by one row of modified regions, and when the thickness of the semiconductor substrate is large, the thickness direction is increased. This is made possible by forming the cutting start region by the modified regions formed in a plurality of rows. Even in the case of natural cracking, a crack does not run on the surface of the portion corresponding to the portion where the cutting start region is not formed at the portion to be cut, and corresponds to the portion where the cutting start region is formed. Since only the part can be cleaved, the cleaving can be controlled well. In recent years, the thickness of semiconductor substrates such as silicon wafers tends to be reduced, and such a cleaving method with good controllability is very effective. 66
  • the modified region formed by multiphoton absorption includes a melt processing region described below.
  • a focusing point is set inside the semiconductor substrate, and laser light is irradiated under the condition that the electric field intensity at the focusing point is 1 ⁇ 10 8 (W / cm 2 ) or more and the pulse width is 1 ⁇ s or less.
  • the inside of the semiconductor substrate is locally heated by multiphoton absorption.
  • a melt processing region is formed inside the semiconductor substrate.
  • the melt treatment region is a region once solidified after melting, a region just in a molten state, or a region re-solidified from a molten state, and can also be referred to as a phase-changed region or a region where the crystal structure has changed.
  • a melt-processed region can also be said to be a region in which one structure is changed to another structure in a single crystal structure, an amorphous structure, or a polycrystalline structure. That is, for example, a region where a single crystal structure is changed to an amorphous structure, a region where a single crystal structure is changed to a polycrystalline structure, a region where a single crystal structure is changed to a structure including an amorphous structure and a polycrystalline structure are included. means .
  • the melt processing region has, for example, an amorphous silicon structure.
  • the upper limit value of the electric field strength is, for example, 1 ⁇ 10 12 (W / cm 2 ).
  • the pulse width is preferably 1 ns to 200 ns.
  • the inventor has confirmed through experiments that a melt-processed region is formed inside a silicon wafer.
  • the experimental conditions are as follows.
  • Light source Semiconductor laser pumped Nd: Y AG laser
  • Pulse width 30 ns.
  • Polarization characteristics linearly polarized light
  • FIG. 7 shows a photograph of a cross section of a part of a silicon wafer cut by laser processing under the above conditions.
  • FIG. A melt processing region 13 is formed inside the silicon wafer 11. The size in the thickness direction of the melt processing region 13 formed under the above conditions is about 100 m.
  • FIG. 8 is a graph showing the relationship between the wavelength of the laser beam and the transmittance inside the silicon substrate. However, the reflection components on the front side and back side of the silicon substrate are removed to show the internal transmittance. The above relationship was shown for each of the thickness t of the silicon substrate of 50 m, 1 0 0 ⁇ m, 2 0 00 ⁇ , 5 0 0 m, and 1 0 0 0 ⁇ m.
  • the laser beam should be transmitted more than 80% inside the silicon substrate.
  • the thickness of the silicon wafer 11 shown in Fig. 7 is 3500 / m
  • the melt-processed region 13 due to multiphoton absorption is formed near the center of the silicon wafer, that is, 1 75 Aim from the surface. Is done.
  • the transmittance is 90% or more when referring to a silicon wafer with a thickness of 200 m. Therefore, the laser beam is hardly absorbed inside the silicon wafer 11, and almost all is transmitted. .
  • melt processing region 1 3 is not formed by multiphoton absorption. Means that.
  • the formation of the melt-processed region by multiphoton absorption is, for example, from “Picosecond” pulse laser on pages 7 2 to 7 3 of the 6th Annual Meeting of the Japan Welding Society (September 6th, 2000) It is described in “Processing characteristics evaluation of silicon”.
  • Silicon wafers are cracked in the cross-sectional direction starting from the cutting start region formed in the melt processing region, and as a result, the crack reaches the front and back surfaces of the silicon wafer. Disconnected.
  • the cracks that reach the front and back surfaces of the silicon wafer may grow spontaneously, or they may grow when a force is applied to the silicon wafer.
  • cracks grow naturally from the cutting start area to the front and back surfaces of the silicon wafer when the crack grows from a state where the melt processing area forming the cutting start area is melted, In some cases, cracks grow when the solidification region that forms the region re-solidifies from a molten state.
  • the melt processing region is formed only inside the silicon wafer, and the melt processing region is formed only inside the cut surface after cutting as shown in FIG. If the cutting start region is formed in the semiconductor substrate by the melt processing region, it is difficult to generate unnecessary cracks off the cutting start region line during cleaving, so that the cleaving control becomes easy.
  • the case of the melt processing region has been described as the modified region formed by multiphoton absorption.
  • the cutting origin region is formed as follows in consideration of the crystal structure of the semiconductor substrate and its cleavage property, the The semiconductor substrate can be cut with high accuracy with even smaller force starting from the cutting start region.
  • the direction along the (1 1 1) plane (first cleavage plane) or (1 1 0) plane (second cleavage plane) It is preferable to form a cutting starting area. Further, in the case of a substrate made of a zinc-blende III-group V compound semiconductor such as Ga As, it is preferable to form the cutting origin region in the direction along the (1 1 0) plane.
  • the direction in which the above-described cutting start region is to be formed (for example, a single crystal silicon substrate) If the orientation flat is formed on the semiconductor substrate along the direction perpendicular to the direction in which the cutting origin region is to be formed (in the direction along the (1 1 1) plane), the cutting is performed based on the orientation flat. It is possible to easily and accurately form the cutting starting point region along the direction in which the starting point region is to be formed on the semiconductor substrate.
  • FIG. 9 is a schematic configuration diagram of the laser processing apparatus 100.
  • the laser processing apparatus 100 includes a laser light source 10 1 that generates the laser light L, and a laser light source control unit 1 0 that controls the laser light source 1 0 1 in order to adjust the output, pulse width, and the like of the laser light L. 2, a dichroic mirror 10 0 3 having a function of reflecting the laser beam L and arranged to change the direction of the optical axis of the laser beam L by 90 °, and a laser reflected by the dichroic mirror 1 0 3
  • the mounting table 1 0 7 is an infrared transmission illumination 1 1 6 that generates infrared light to illuminate the semiconductor substrate 1 with infrared rays, and a semiconductor substrate 1 is illuminated with infrared rays by the infrared transmission illumination 1 1 6. And a support portion 1 0 7 a for supporting the substrate 1 on the infrared transmission illumination 1 1 6.
  • the Z-axis direction is a direction orthogonal to the surface 3 of the semiconductor substrate 1, it is the direction of the focal depth of the laser light L incident on the semiconductor substrate 1. Therefore, by moving the Z-axis stage 1 1 3 in the Z-axis direction, the laser beam L is transmitted to the surface 3 or inside of the semiconductor substrate 1. Focus point P can be adjusted. Further, the movement of the condensing point P in the X (Y) axis direction is performed by moving the semiconductor substrate 1 in the X (Y) axis direction by the X (Y) axis stage 109 (11 1).
  • the laser light source 101 is an Nd: YAG laser that generates pulsed laser light.
  • Nd YV_ ⁇ 4 Les monodentate
  • Nd there is a YLF laser or a titanium sapphire laser. If that form a molten processed region, N d: Y AG laser, N d: YV0 4 laser, N d: it is preferable to use YL F, single THE.
  • pulsed laser light is used for processing the semiconductor substrate 1, but continuous wave laser light may be used as long as multiphoton absorption can be caused.
  • the laser processing apparatus 100 further includes an observation light source 11 7 that generates visible light to illuminate the semiconductor substrate 1 mounted on the mounting table 107 with visible light, a dike mouth mirror 103, and a condensing lens 105. And a beam splitter for visible light 119 arranged on the same optical axis as the above.
  • a dichroic mirror 103 is disposed between the beam splitter 1 19 and the condensing lens 105.
  • the beam splitter 1 19 has the function of reflecting about half of the visible light and transmitting the other half, and the direction of the optical axis of the visible light is 90. It is arranged to change.
  • the laser processing apparatus 100 further includes an imaging element 121 and an imaging lens 123 disposed on the same optical axis as the beam splitter 119, the dichroic mirror 103, and the condensing lens 105.
  • An example of the image sensor 121 is a CCD camera.
  • the reflected light of the visible light that illuminates the surface 3 including the cutting line 5 etc. passes through the condensing lens 105, the dichroic mirror 103, and the beam splitter 1 19, and is imaged by the imaging lens 123.
  • the image is captured at 121 and becomes image data.
  • the semiconductor substrate 1 is illuminated with infrared rays from the infrared transmission illumination 1 1 6, and an imaging data processing unit 1 25 to be described later sets the observation surfaces of the imaging lens 1 2 3 and the imaging device 1 2 1 to the semiconductor substrate 1. According to the inside, the inside of the semiconductor substrate 1 can be imaged and the imaging data inside the semiconductor substrate 1 can be acquired.
  • the laser processing apparatus 100 further includes an imaging data processing unit 1 2 5 to which imaging data output from the imaging element 1 2 1 is input, and an overall control unit 1 2 7 that controls the entire laser processing apparatus 100. And a monitor 1 2 9.
  • the imaging data processing unit 1 2 5 calculates focus data for focusing the visible light generated by the observation light source 1 1 7 on the surface 3 based on the imaging data. Based on this focus data, the stage controller 1 1 5 controls the movement of the Z-axis stage 1 1 3 so that the visible light is focused on the surface 3. Therefore, the imaging data processing unit 1 2 5 functions as an autofocus unit. Further, the imaging data processing unit 1 25 calculates image data such as an enlarged image of the surface 3 based on the imaging data. This image data is sent to the overall control unit 1 27, where it is subjected to various processing and sent to the monitor 1 29. As a result, an enlarged image or the like is displayed on the monitor 1 29.
  • the overall control unit 1 2 7 receives data from the stage control unit 1 1 5 and image data from the imaging data processing unit 1 2 5. Based on these data, the laser light source control unit 1 0 2 The entire laser beam machining apparatus 100 is controlled by controlling the observation light source 1 ′ 17 and the stage controller 1 15. Therefore, the overall control unit 1 2 7 functions as a converter unit.
  • FIG. 10 is a perspective view of the semiconductor substrate 1 according to the first embodiment.
  • FIG. 11 is a cross-sectional view taken along the line XI-XI of the semiconductor substrate ⁇ shown in FIG. 10.
  • FIG. FIG. 13 is a cross-sectional view taken along line XII—XII of the semiconductor substrate 1 shown in FIG. 13, and
  • FIG. 13 shows the semiconductor substrate shown in FIG. 2 is a view showing a photograph of a laser mark provided on the surface of 1.
  • the semiconductor substrate 1 according to Example 1 is a disc-shaped silicon wafer having a thickness of 3500 ⁇ m and an outer diameter of 4 inches. As shown in FIG. Orientation flats (hereinafter referred to as “OF”) 15 are formed by cutting out to form straight lines.
  • OF Orientation flats
  • a cutting origin region 9 a extending in a direction parallel to OF 15 is formed inside the semiconductor substrate 1, and the center of the outer diameter inside the semiconductor substrate 1 (hereinafter referred to as “reference origin”). A plurality of force is formed at predetermined intervals.
  • a plurality of cutting start region 9 b extending in a direction perpendicular to OF 15 is formed in the semiconductor substrate 1 at predetermined intervals from the reference origin.
  • the cutting start region 9 a is formed only inside the semiconductor substrate 1 and does not reach the front surface 3 and the back surface 17 of the semiconductor substrate 1. The same applies to the cutting start region 9b.
  • Each of the cutting start region 9 a and the cutting start region 9 b is formed by a melt processing region formed in one row inside the semiconductor substrate 1.
  • the laser mark 19 is provided. By both the laser mark 19 and the OF 15, the positions of the cutting start region 9 a and the cutting start region 9 b formed inside the semiconductor substrate 1 can be grasped. That is, both of the laser marks 19 and ⁇ F 15 function as identification marks for identifying the positions of the cutting start region 9 a and the cutting start region 9 formed in the semiconductor substrate 1.
  • Laser mark 1
  • the formation location of 9 may be formed at a location other than a functional portion such as a circuit formed on the semiconductor substrate, or a portion not used as a semiconductor device at the peripheral portion of the semiconductor substrate.
  • the laser mark 19 is formed by melting the surface 3 of the semiconductor substrate 1 by a clean laser marking method called “soft marking”, which has no thermal effect. As shown in FIG. Mark 19 is concave with a diameter of 1 ⁇ ⁇ .
  • the light absorption characteristics of the semiconductor substrate 1 are measured with a spectrophotometer or the like (not shown). Based on this measurement result, laser light for forming the laser mark 19 on the surface 3 of the semiconductor substrate 1 and laser light L having a wavelength transparent to the semiconductor substrate 1 or a wavelength with little absorption are generated. Each laser light source 1 0 1 to be selected is selected (S 1 0 1). Subsequently, the thickness of the semiconductor substrate 1 is measured. Based on the measurement result of the thickness and the refractive index of the semiconductor substrate 1, the amount of movement of the semiconductor substrate 1 in the Z-axis direction is determined (S 1 0 3).
  • the laser beam L is located on the surface 3 of the semiconductor substrate 1 in order to position the condensing point P of the laser light L having a wavelength transparent to the semiconductor substrate 1 or a wavelength with less absorption to the semiconductor substrate 1. This is the amount of movement of the semiconductor substrate 1 in the Z-axis direction with respect to the condensing point P of light L. This amount of movement is input to the overall control unit 1 27.
  • the semiconductor substrate 1 is placed on the support member 1 0 7 a of the mounting table 1 0 7 of the laser processing apparatus 100. Then, visible light is generated from the observation light source 1 1 7 to illuminate the semiconductor substrate 1 (S 1 0 5). The surface 3 of the illuminated semiconductor substrate 1 is imaged by the image sensor 1 2 1. The imaging data imaged by the imaging element 1 2 1 is sent to the imaging data processing unit 1 2 5. Based on this imaging data, the imaging data processing unit 1 2 5 calculates focus data such that the visible light focus of the observation light source 1 1 7 is located on the surface 3 (S 1 0 7) 0
  • This focus data is sent to the stage controller 1 1 5.
  • the stage controller 1 15 moves the Z-axis stage 1 13 in the Z-axis direction based on the focus data (S 1 0 9). Thereby, the focus of the visible light of the observation light source 1 17 is located on the surface 3 of the semiconductor substrate 1.
  • the imaging data processing unit 1 25 calculates the enlarged image data of the surface 3 of the semiconductor substrate 1 based on the imaging data.
  • This enlarged image data is sent to the monitor 1 2 9 via the overall control unit 1 2 7, and as a result, the monitor 1 2 9 displays the surface of the semiconductor substrate 1. A magnified image of surface 3 is displayed.
  • the semiconductor substrate 1 is rotated by the e stage 1 0 8 so that the direction of OF 15 of the semiconductor substrate 1 coincides with the stroke direction of the Y stage 1 1 1 (s i i i
  • the X-axis stage 1 0 9, Y so that the condensing point of the laser beam for forming the laser mark 19 on the surface 3 of the semiconductor substrate 1 is located immediately above the reference origin on the surface 3 of the semiconductor substrate 1.
  • the semiconductor substrate 1 is moved by the axis stage 1 1 1 and the Z axis stage 1 1 3 (S 1 1 3). In this state, laser light is irradiated to form a laser mark 19 at a position immediately above the reference origin on the surface 3 of the semiconductor substrate 1 (S 1 15).
  • the movement amount data determined in step S 1 0 3 and previously input to the overall control unit 1 2 7 is sent to the stage control unit 1 15. Based on this movement amount data, the stage controller 1 15 moves the semiconductor substrate 1 in the Z-axis direction by the Z-axis stage 1 1 3 to the position where the condensing point P of the laser beam L is inside the semiconductor substrate 1 (S 1 1 7
  • laser light L is generated from the laser light source 101 and the semiconductor substrate 1 is irradiated with the laser light L. Since the condensing point P of the laser beam L is located inside the semiconductor substrate 1, the melting region is formed only inside the semiconductor substrate 1. Then, the semiconductor substrate 1 is moved by the X-axis stage 1 0 9 and the Y-axis stage 1 1 1, and the cutting origin region 9 a and OF extending inside the semiconductor substrate 1 in the direction parallel to ⁇ F 1 5 A plurality of cutting starting point regions 9b extending in a direction perpendicular to 15 are formed at predetermined intervals from the reference origin (S 1 19), and the semiconductor substrate 1 according to the first embodiment is manufactured.
  • the semiconductor substrate 1 is illuminated with infrared rays by infrared transmission illumination 1 1 6, and the imaging data processing unit 1 2 5 uses the imaging lens 1 2 3 and the imaging device 1 2 1 to observe the observation surface of the semiconductor substrate 1. If it is matched with the inside of the semiconductor substrate 1, it is possible to take an image of the cutting start point region 9 a and the cutting start point region 9 b formed inside the semiconductor substrate 1, acquire image pickup data, and display it on the monitor 1 29.
  • the semiconductor substrate 1 according to the first embodiment is disposed inside the semiconductor substrate 1.
  • the laser beam L is irradiated.
  • a melt processing region by multiphoton absorption is formed inside the semiconductor substrate 1.
  • the laser beam L is hardly absorbed by the surface 3 of the semiconductor substrate 1, so that the surface 3 of the semiconductor substrate 1 is not melted. Therefore, in the semiconductor device manufacturing process, a functional element can be formed on the surface 3 of the semiconductor substrate 1 by a conventional process. Since the back surface 17 of the semiconductor substrate 1 is not melted, the back surface 17 of the semiconductor substrate 1 can of course be handled in the same manner as the front surface 3 of the semiconductor substrate 1.
  • the cutting start region 9 a and the cutting start region 9 b are formed inside the semiconductor substrate 1 in the melting treatment region. If a melt-processed area is formed inside the semiconductor substrate 1, the semiconductor substrate 1 cracks with a relatively small force starting from the melt-processed area, so the cutting start area 9 a and the cutting start area The semiconductor substrate 1 can be broken and cut along the line 9b with high accuracy. Therefore, in the manufacturing process of the semiconductor device, cutting and heating / melting processing after the formation of the functional element as in the conventional method is not necessary. For example, the semiconductor substrate 1 along the cutting start region 9a and the cutting start region 9b. The semiconductor substrate 1 can be cut simply by applying a knife edge to the back surface 17 of the substrate. Therefore, it is possible to prevent the functional element from being broken by cutting the semiconductor substrate 1 after the functional element is formed.
  • Both 5 and 5 serve as a reference for the positions of the cutting start region 9 a and the cutting start region 9 b formed inside the semiconductor substrate 1. Therefore, in the semiconductor device manufacturing process, the positions of the cutting start region 9 a and the cutting start region 9 b formed inside the semiconductor substrate 1 are determined based on the laser mark 19 and OF 15. By grasping and patterning the functional element, the semiconductor substrate 1 can be cut.
  • Example 2 of the semiconductor substrate according to the present invention will be described with reference to FIGS.
  • the semiconductor substrate 1 according to Example 2 is a disk-shaped GaAs wafer having a thickness of 3500 m and an outer diameter of 4 inches, and as shown in FIG. Some of them are cut out to form a straight line, and OF 15 is formed.
  • This semiconductor substrate 1 has an outer edge portion 3 1 along the outer edge (the outer portion of the two-dot chain line in FIG. 15), and an inner portion 3 2 of this outer edge portion 3 1 (the inner side of the two-dot chain line in FIG. 15).
  • a plurality of cutting starting region 9 a extending in a direction parallel to the OF 15 and a plurality extending in a direction perpendicular to the OF 15
  • the cutting start region 9b is formed.
  • the cutting start regions 9 a and 9 b are formed in a lattice shape inside the inner portion 32, so that the inner portion 32 is partitioned into a large number of rectangular partition portions 33.
  • the cutting start region 9 a and the cutting start region 9 b are formed to intersect. That is, in the corner portion 33a, the cutting start region 9a ends beyond the cutting start region 9b, and the cutting start region 9b ends beyond the cutting start region 9a.
  • the “partition part 3 3 located on the outer edge part 3 1 side among the many part parts 3 3” means, in other words, the “partition part 3 3 formed adjacent to the outer edge part 3 1. It can also be said that the divided section 3 3 ”.
  • a method for manufacturing the semiconductor substrate 1 according to Example 2 will be described.
  • a mask 36 having an opening 35 having the same shape as the inner portion 32 of the semiconductor substrate 1 is prepared.
  • a mask 36 is overlaid on the semiconductor substrate 1 so that the inner part 3 2 is exposed from the opening 35.
  • the outer edge portion 31 of the semiconductor substrate 1 is covered with the mask 36.
  • the laser processing apparatus 100 described above is used to irradiate the laser beam with the converging point inside the semiconductor substrate 1, and the semiconductor substrate 1 is melted by multiphoton absorption.
  • the cutting start region 9 a, 9 b is formed inside a predetermined distance from the laser light incident surface of the semiconductor substrate 1 (that is, the surface of the semiconductor substrate 1 exposed from the opening 35 of the mask 36). To do.
  • the planned cutting line 5 that becomes the scanning line of the laser beam is set in a grid pattern with OF 15 as a reference, but the starting point 5 a and the end point 5 b of each planned cutting line 5 are positioned on the mask 36.
  • the laser beam is irradiated to the inner portion 32 of the semiconductor substrate 1 reliably and under equivalent conditions.
  • the melt-processed region formed inside the inner portion 3 2 can be formed in an almost equivalent formation state even at the position of deviation, and it is possible to form precise cutting start regions 9 a and 9 b. become.
  • the starting point 5a and the ending point 5b of each planned cutting line 5 are positioned near the boundary between the inner part 3 2 and the outer edge part 31 of the semiconductor substrate 1, and each cutting schedule is scheduled.
  • the functional elements are formed on the surface of the semiconductor substrate 1 in the semiconductor device manufacturing process for the same reason as the semiconductor substrate 1 according to the first embodiment.
  • the cutting start regions 9 a and 9 b are formed inside the inner portion 3 2 of the semiconductor substrate 1 and the cutting start regions 9 a and 9 b are not formed on the outer edge portion 31, The mechanical strength of the conductor substrate 1 as a whole is improved. Therefore, it is possible to prevent a situation in which the semiconductor substrate 1 is unexpectedly cut in the transport process of the semiconductor substrate 1 or the heating process for forming the functional element.
  • the cutting start regions 9 a and 9 b are formed so as to intersect with each other. As with the other portions of the partition 33, the formation of the cutting start regions 9a and 9 is ensured and satisfactory. Therefore, when the semiconductor substrate 1 is cut, chipping can be prevented if chipping occurs in the semiconductor chip corresponding to the partition portion 33.
  • the cutting start regions 9 a and 9 b are contained inside the semiconductor substrate 1 and are not exposed to the outside, so that a melting processing region constituting the cutting start regions 9 a and 9 b is formed. It is also possible to prevent gas from being generated during the process.
  • the melt processing regions constituting the cutting start regions 9 a and 9 b are formed inside the semiconductor substrate 1, a gettering effect for trapping impurities is expected, and in the semiconductor device manufacturing process, Impurities such as heavy metals can be removed from the device active region. The same applies to the semiconductor substrate 1 according to the first embodiment.
  • FIG. 19 is a perspective view of the semiconductor chip 21 according to the embodiment. Fine 66
  • FIG. 1 A first figure.
  • the semiconductor chip 21 according to Example 1 is formed as follows. That is, using the semiconductor substrate 1 according to Example 1 or Example 2 described above, in the manufacturing process of the semiconductor device, the cutting start region 9 a and the cutting start region 9 b formed inside the semiconductor substrate 1 The position is grasped based on the laser marks 19 and OF 15 and a plurality of functional elements 23 are formed on the surface 3 of the semiconductor substrate 1 by patterning. Then, after an inspection process such as a probe test, on the back surface 17 of the semiconductor substrate 1 along the cutting start region 9a and the cutting start region 9b based on the laser mark 19 and ⁇ ⁇ F 15 The semiconductor substrate 1 is cut by applying a knife edge to obtain the semiconductor chip 2 1.
  • the periphery of the semiconductor chip 21 formed in this way is surrounded by the cut surface 25, and the cutting start region is formed on the cut surface 25 of the end surface of the semiconductor chip 21.
  • 9 a or a cutting origin region 9 b Since both the cutting start region 9 a and the cutting start region 9 b are formed by the melting processing region, the semiconductor chip 21 has the melting processing region on the cut surface 25. .
  • the semiconductor chip 21 since the cut surface 25 is protected by the melt processing region, it is possible to prevent occurrence of chipping and cracking on the cut surface 25.
  • the peripheral edge of the semiconductor chip 21 is surrounded by the cut surface 25, the peripheral edge of the semiconductor chip 21 is surrounded by the melt processing region, thereby increasing the bending strength of the semiconductor chip 21. It can be improved.
  • the laser mark and OF are provided on the surface of the semiconductor substrate as identification marks for identifying the position of the cutting start region formed inside the semiconductor substrate.
  • a plurality of laser marks may be provided, Or pull the lie .. JP03 / 02866
  • an identification mark can be provided on the surface of the semiconductor substrate.
  • the cutting start region is formed in a lattice shape inside the semiconductor substrate.
  • the cutting start region is formed by laser processing, the cutting start region is cut along a line having an arbitrary shape. A starting region can be formed.
  • the semiconductor chip of the above embodiment has a peripheral portion surrounded by a cut surface.
  • the peripheral portion is a cut surface, chipping on the cut surface by the melt processing region is possible. Cracking is prevented and the bending strength of the semiconductor chip is improved.
  • the modified region by multiphoton absorption formed at the position of the condensing point of the laser light by irradiation of the laser light is formed inside the semiconductor substrate.
  • the modified region is formed inside the semiconductor substrate by causing the phenomenon that multi-photon absorption occurs at the position of the condensing point when the condensing point of the laser beam is aligned with the inside of the semiconductor substrate. .
  • the surface of the semiconductor substrate is not melted because the laser light is hardly absorbed on the surface of the semiconductor substrate. Therefore, in the semiconductor device manufacturing process, functional elements can be formed on the surface of the semiconductor substrate as in the past.
  • the cutting start region is formed inside the semiconductor substrate by the modified region. If a modified region is formed inside the semiconductor substrate, the semiconductor substrate cracks with a relatively small force starting from the modified region, so the semiconductor substrate is divided and cut along the cutting origin region with high accuracy. can do. Therefore, in the manufacturing process of the semiconductor device, cutting and heating / melting processing after forming the functional element as in the past are not required, and the functional element can be prevented from being broken by cutting the semiconductor substrate.

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Abstract

L'invention concerne un substrat semi-conducteur dont l'élément fonctionnel est protégé contre la cassure par la découpe pendant le processus de fabrication d'un dispositif à semi-conducteur. Le substrat semi-conducteur (1) est caractérisé en ce que les zones de début de découpe (9a, 9b) sont formées à l'intérieur d'une région de fusion par absorption de multiphotons par rayonnement avec un faisceau laser au point focal du faisceau laser. En conséquence, on obtient un élément fonctionnel sur la surface du substrat semi-conducteur. Pendant la formation des zones de début de découpe (9a, 9b) à l'intérieur du substrat semi-conducteur (1), ce dernier (1) est découpé par cassure haute précision faisant intervenir une force relativement petite le long des zones de début de découpe (9a, 9b).
PCT/JP2003/002866 2002-03-12 2003-03-11 Substrat semi-conducteur, puce a semi-conducteur et procede de fabrication d'un dispositif a semi-conducteur Ceased WO2003076118A1 (fr)

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AU2003211575A AU2003211575A1 (en) 2002-03-12 2003-03-11 Semiconductor substrate, semiconductor chip, and semiconductor device manufacturing method
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TWI289890B (en) 2007-11-11

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