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WO2003050328A1 - Appareil d'electrodeposition, procede d'electrodeposition et procede pour produire un dispositif a semi-conducteurs - Google Patents

Appareil d'electrodeposition, procede d'electrodeposition et procede pour produire un dispositif a semi-conducteurs Download PDF

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Publication number
WO2003050328A1
WO2003050328A1 PCT/JP2001/010873 JP0110873W WO03050328A1 WO 2003050328 A1 WO2003050328 A1 WO 2003050328A1 JP 0110873 W JP0110873 W JP 0110873W WO 03050328 A1 WO03050328 A1 WO 03050328A1
Authority
WO
WIPO (PCT)
Prior art keywords
plating
bath
conductive member
film
lead
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2001/010873
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English (en)
Japanese (ja)
Inventor
Koujiro Kameyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to TW090105093A priority Critical patent/TW501277B/zh
Priority to JP2001095257A priority patent/JP3568486B2/ja
Priority to CNB011121610A priority patent/CN100457979C/zh
Priority to EP01274958A priority patent/EP1464731A4/fr
Priority to CA002467037A priority patent/CA2467037A1/fr
Priority to PCT/JP2001/010873 priority patent/WO2003050328A1/fr
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to KR10-2003-7014306A priority patent/KR20040058113A/ko
Priority to US10/487,158 priority patent/US20040235219A1/en
Priority to CNB018233600A priority patent/CN1318651C/zh
Priority to JP2002253781A priority patent/JP3995564B2/ja
Publication of WO2003050328A1 publication Critical patent/WO2003050328A1/fr
Anticipated expiration legal-status Critical
Priority to US11/692,695 priority patent/US7772043B2/en
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/06—Suspending or supporting devices for articles to be coated
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/16—Apparatus for electrolytic coating of small objects in bulk
    • C25D17/28—Apparatus for electrolytic coating of small objects in bulk with means for moving the objects individually through the apparatus during treatment
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/10—Electroplating with more than one layer of the same or of different metals
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/60—Electroplating characterised by the structure or texture of the layers
    • C25D5/605—Surface topography of the layers, e.g. rough, dendritic or nodular layers
    • C25D5/611—Smooth layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
    • H01L23/49582—Metallic layers on lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]

Definitions

  • the present invention relates to a plating apparatus, a plating method, and a method of manufacturing a semiconductor device.
  • a lead material in which the surface of a conductive member such as Cu alone, a Cu alloy, or a Fe—Ni alloy is coated with a plating layer of Sn alone or an Sn alloy is a simple material of Cu or C It has the excellent conductivity and mechanical strength that u alloy has. Yet, the rie de material is a high-performance conductor having both also corrosion resistance and good solderability to S n alone or S n alloy is provided. Therefore, they are frequently used in the fields of electrical and electronic equipment such as various terminals, connectors, and leads, and in the field of power cables.
  • solderability is solder (! -Alloy), which has good solderability and corrosion resistance, and is used in the electrical and electronic industrial parts such as connectors and lead frames. It is widely used as a plating tool.
  • FIG. 7 is a cross-sectional view showing a basic structure of a lead member having an AA cross section in the semiconductor lead frame shown in FIG.
  • the conductive member 21 is made of Cu, a Cu-based alloy containing Cu as a main component, or a Fe-i-based alloy containing Fe-Ni as a main component. Then, on the surfaces of the conductive members 21, two layers of plating films of different metal materials are applied. For example, the first plating film 22 of Sn and the second plating film of Sn—Bi The lug film 23 is formed in this order.
  • the thickness of the first main luck film 2 2 ti when the thickness of the second main luck film 3 was set to t 2, is about 3 ⁇ 1 5 / ⁇ ⁇ , t 2 about 1-5 /
  • im, 1; 2 ; 1 is set to about 0.1 to 0.5, cost, solderability, heat resistance, solder joint strength, welding with aluminum wire, etc. It is known that it has good characteristics also in terms of the welding strength of the part and that it is suitable because it can improve the performance as a lead material.
  • Fig. 8 shows the layout of the entire automatic plating system.
  • organic contaminants such as oils and fats which inhibit the adhesion of the solder plating film on the surface of the conductive member 21 and the solderability are removed.
  • a chemical etching treatment (basically, a treatment using an oxidation-reduction reaction) is performed in the chemical etching bath 3 to remove the presence of grain boundaries and inclusions.
  • the surface of the conductive member 21 having a more uneven surface is made uniform.
  • the oxide film adhered in the washing bath 4 is removed in the acid activation bath 5.
  • plating is performed in the solder plating device 7. Since the solder plating solution is strongly acidic, the surface after plating is acidic. On such surfaces, the film discolors over time and the solderability deteriorates.
  • the washing bath 8 and the neutralization bath 9 the acid remaining on the plating surface is neutralized to remove the adsorbed organic matter. Thereafter, the conductive member 21 washed and washed in the washing bath 10 and the washing bath 11 is dried in the drying device 12.
  • FIG. 9 is a cross-sectional view of the chemical etching bath 3 in the BB direction in the entire plating apparatus shown in FIG.
  • the function of the chemical etching bath 3 is as described above.
  • the mechanism of this plating device will be described.
  • the lateral feed type pusher 13 and the transport rail 14 are both movable in the vertical direction.
  • the upper limit position and lower limit position of the movable range are determined, and the moving range is repeated.
  • Hanging hooks 15 are suitable for the work purpose.
  • the auxiliary plating rack 16 that suspends the conductive member 21 to be plated is hung on the hanging hook 15 and set in the plating device.
  • the transverse feed type pusher 13 will be described.
  • the distance between the traverse pushers 13 is basically equal to the distance between the centers of adjacent bathtubs.
  • the lateral feed type pusher 13 is mounted on a single arm. When the hanging hook 15 is moved one span in the working direction, the pusher 13 returns by that amount. The lateral feed type pusher 13 feeds one span at the upper limit position and returns by the lower limit position. Also, the transport rails 14 move vertically but do not move in the traveling direction. The repetition of this work keeps the plating device functioning.
  • This plating apparatus described above had one plating pretreatment line and one solder plating line. For example, a first plating film 22 is formed on the conductive member 21, a Sn plating film is formed on the second plating film 23, and a Sn—Bi plating film is formed on the second plating film 23.
  • a Sn plating film is formed on the first plating film 22 and a Sn_Ag plating film is formed on the second plating film 23.
  • the same Sn plating solution can be used for both of the first plating film, but the plating solution to be used for the second plating film is different. Therefore, after the former plating film has been formed on the conductive member 21, the plating device is stopped once and the plating solution in the bath tub is replaced with a plating solution for the latter. A plating film was formed on the next conductive member 21.
  • plating work is performed by applying a strong current density to the plating solution.
  • various thicknesses of the plating film were formed mainly by varying the current density.
  • the upper limit of the current density range suitable for the plating solution is called the maximum current density.
  • this solder plating apparatus has one plating pretreatment line and one solder plating line. Therefore, when forming a plurality of combinations of plating films on the conductive member 21, there is a problem that when the combination of the plating films is changed, it is not possible to perform operations continuously. In other words, in this plating apparatus, the conductive members 21 were successively immersed in the prepared plating liquid, so that the plating film of the same plating film combination could be formed continuously. However, depending on the intended use of the conductive member 21 to be plated, a plurality of combinations of plating films could not be continuously formed on the conductive member 21. In other words, the solder plating line has a problem that extra time and labor are required for replacing the plating liquid.
  • the plating bath in the plating line forms a plating film on the conductive member 21. It has electrodes for supplying liquid and current. Then, a plating film was formed by using the plating apparatus.
  • conductive members 21 there are various types of conductive members 21 depending on the surface area and the design. Therefore, a current flows from the anode to the cathode, but a uniform current does not always pass through any part of the surface of the conductive member 21 serving as the cathode. In other words, each part of the conductive member 21 is not necessarily equidistant from the anode.
  • the present invention has been made in view of the above-mentioned conventional problems, and a plating apparatus of the present invention is a plating apparatus having a plating pre-processing line and a plating line, wherein the plating line includes a plurality of plating lines.
  • the present invention is characterized in that a plating bath is provided, and a plating bath is provided for the desired plating bath.
  • the plating line has a plurality of plating baths below the transfer rail.
  • a plating liquid storage bathtub is installed corresponding to the plating bathtub, and a function is provided for moving the plating liquid between the bathtubs.
  • a plurality of plating baths and a plating bath for each of them may be installed under the transport rail to provide a function to move plating liquid between both baths.
  • a single transfer rail or a combination of a plurality of single-layer or two- or more-layer plating films can be formed continuously on the conductive member. Can be.
  • the plating method of the present invention uses the conductive member and the plating auxiliary rack integrally as another electrode different from the electrode, and further comprises the plating auxiliary rack.
  • the plating film thickness and the plating film composition distribution can be adjusted by being located between the electrode and the conductive member.
  • the plating apparatus of the present invention includes an electrode for supplying a desired plating liquid and a current in a plating bath, and a conductive member installed on a plating auxiliary rack. And a plating apparatus for forming a plating film by forming the plating film in the plating auxiliary rack made of a conductive material. I do.
  • the plating auxiliary rack is formed into a rectangular parallelepiped having four main pillars, and the conductive member is provided in the plating auxiliary rack to form a plating film.
  • a more uniform current density can be applied to any part of the conductive member with respect to various conductive members having different surface areas, designs, and the like.
  • a plurality of plating lines are provided in the plating line. It has a plating bath for forming a plating film layer of a pattern, and each plating bath is provided with a plating liquid storage bath. Described.
  • FIG. 1 is a layout schematically showing the functions of a solder plating line for implementing the plating apparatus of the present invention.
  • the pre-dip bath 43, the first bath 44, the second bath 45, the third bath 46, and the washing bath 47 are transport rails. It is installed under 4 2. Then, it is sent one pitch at a time by a lateral feed type pusher 41, and a plating film is formed on the conductive member 21 (see FIG. 7) using these baths as in the conventional case.
  • the first mode is a mode in which a plating liquid storage bathtub is installed as needed in correspondence with the plating bathtub.
  • the first plating bath 44 is not provided with a plating liquid storage bath, and the first plating bath 49 for the second plating bath 45 is provided.
  • a second plating liquid storage bathtub 50 for the third plating bathtub 46 is installed.
  • a plating liquid storage bath was installed under the plating bath so that the plating liquid could be stored in a short time when storing the plating liquid.
  • a plurality of combination plating films can be continuously formed on the conductive member 21 with one transfer rail according to the intended use. And features.
  • FIG. 2 similarly to FIG. 1 described above, is a layout schematically showing the functions of a solder plating line for implementing the plating apparatus of the present invention.
  • the predip bath 53, the first plating bath 54, the second plating bath 55, the third plating bath 56, and the washing bath 57 are transport lines 5. Installed under 2. Then, they are fed one pitch at a time by a transverse feed type pusher 51, and a plating film is formed on the conductive member 21 using the baths.
  • a plating liquid storage bath is provided for all plating baths.
  • a first plating solution storage bath 59 for the first plating bath 54 and a second plating bath 60 for the second plating bath 55 are provided.
  • a third plating solution storage bath 61 for the third plating bath 56 is installed.
  • a plating liquid storage bathtub is installed under the plating bathtub as in the first embodiment described above. Was placed.
  • the mechanism for transporting the solder plating line is the same as that in FIG. 9 described above.
  • the plating bath of Sn is put in the first plating bath 44, and the plating bath of Sn-Bi is put in the second plating bath 45.
  • the third plating bath 46 contains a plating solution of Sn—Ag.
  • the required plating bath is selected according to the intended use of the plated conductive member 21, and the plating liquid in the plating bath that is not required is moved to the plating liquid storage bath. I do.
  • the plating liquid is always placed in the first plating bath 44 containing the plating liquid of Sn, and the conductive member 21 is immersed in the plating liquid of Sn.
  • a single-layer plating film of Sn is formed on the conductive member 21 or a plating film of Sn—Bi or Sn—Ag is formed on the second layer with the first-layer force SSn. Is done. Since the structure of the lead material is the same as that shown in FIG. 7, the same reference numerals are used. First, a case where only the first plating film 22 of Sn single layer is formed on the conductive member 21 will be described.
  • the first plating bath 44 containing the plating solution of Sn always contains the plating solution of Sn, and the plating film of Sn is formed on the conductive member 21.
  • the conductive member 21 treated with the above-mentioned plating pretreatment line is subjected to removal of a hydroxyl film on the surface thereof in a pre-dipping bath 43, and the plating of Sn in the first plating bath 44 is performed. Immerse in liquid.
  • the plating liquid in the bath is stored in the first plating bath. Move to bathtub 49 and second plating liquid storage bathtub 50.
  • the conductive member 21 having the Sn plating film formed in the first plating bath 44 is conveyed to the second plating bath 45 and the third plating bath 46. No plating film is formed because no plating liquid is contained in the sample.
  • the surface of the conductive member 21 on which the plating film is formed is washed in a washing bath 47. As a result, an Sn single-layer plating film is formed on the conductive member 21.
  • a case in which two layers of the first plating film 22 and the second plating film 23 are formed on the conductive member 21 will be described.
  • the step of forming the plating film on the conductive member 21 is the same as described above.
  • the first plating bath 44 always contains the plating solution of Sn
  • the first plating film 22 of Sn is formed on the conductive member 21.
  • a plating bath for forming the second plating film 23 is selected according to the intended use of the conductive member 21.
  • the plating solution of Sn—Ag in the third plating bath 4.6 is stored in the second plating solution. Move to bathtub 50.
  • the plating solution of Sn—Bi in the second plating bath 45 is moved to the first plating bath 49.
  • the Sn-Ag plating liquid is returned from the second plating liquid storage bath 50 to the third plating bath 46.
  • a two-layer plating film of Sn and Sn—Bi or Sn and Sn—Ag is formed on the conductive member 21.
  • the metal material of the plating liquid in the first plating bath 44 is Sn
  • the metal material of the plating liquid in the second plating bath 45 is Sn—.
  • B i the metal material of the plating solution in the third plating bath 46 is Sn—Ag. Since the metal and the solution excluding the solvent for dissolving the metal have the same liquid composition, a plating film can be continuously formed on the conductive member 21. However, a plating film may be formed on the conductive member 21 with a plating solution having a different liquid composition.
  • the plating method of the solder plating line is the same as that of the first embodiment described above.
  • the first plating bath 54 contains a plating solution of Sn
  • the required plating bath is selected according to the intended use of the plated conductive member 21, and the plating liquid in the plating bath that is not required is transferred to the plating bath. Moving.
  • Sn or Sn: Bi 98 (% by weight): 2 (% by weight) is formed on the conductive part.
  • a plating bath containing a plurality of plating liquids having different plating liquid constitutions, and a plating bath containing the plating liquid are installed in the plating bath as needed or all. Then, the plating solution can be moved in both bathtubs according to the intended use of the conductive member 21. As a result, it is possible to form a plurality of combinations of plating films continuously on one transfer rail.
  • a plurality of combinations of plating films can be formed on the conductive member 21 by one continuous conveyance rail. This eliminates the need to temporarily stop the plating apparatus according to the combination of the plating membranes and replace the plating liquid in the bathtub. As a result, the working time can be greatly reduced, and the labor for replacing the plating solution can be omitted.
  • each plating solution does not mix with each other, so that the plating solution is managed and the plating bath is maintained. Labor can be greatly reduced.
  • a plurality of combinations of plating films can be continuously formed on one transfer rail.
  • the plating liquid is moved to the first plating bath, and the plating film is formed in the second and third plating baths, and the first and second plating baths are formed.
  • the tank there is a method in which the plating liquid is moved to the first and second plating liquid storage baths, and a single-layer plating film is formed only in the third plating bath.
  • a thick plating film can be formed on the conductive member 21 by putting a plating solution having the same composition into adjacent plating baths.
  • a plurality of plating films can be continuously formed on one transport rail. It is possible to form.
  • solder plating has been described as an example, but this plating device can be used not only for solder plating.
  • this plating device can be used not only for solder plating.
  • a plurality of combinations of plating films can be formed on the conductive member 21 continuously by using one plating rail by using the plating device.
  • an auxiliary plating rack having a rectangular parallelepiped structure centered on four main pillars and This section describes the plating method using the plating auxiliary rack.
  • the surface area and the like can be variously changed. It is characterized in that the current density is applied more uniformly to any part of the conductive member 21.
  • the plating solution has a current density range suitable for each plating solution when performing plating work, and performing plating work within that range provides high quality plating.
  • a kick film can be formed.
  • this method consists of four main pillars.
  • the conductive member 21 is set in the rectangular auxiliary rack 72, and the entire auxiliary rack 72 is immersed in the plating liquid in the plating bath 71. Since the auxiliary plating rack 72 is formed of a conductive material, the cathode is integrally formed with the conductive member 21. As shown in FIG. 2, the conductive member 21 is The main column of the auxiliary rack 72 is located between the anode 73 and the conductive member 21 because it is installed so as to be located at the center of the auxiliary rack 72.
  • a plating film having a uniform plating film thickness and a uniform plating film composition distribution is formed on a variety of different conducting members 21 such as a conducting member 21 having a large surface area and a conducting member having a small surface area. This is bad.
  • a plating film may be formed on the conductive member 21 having a large surface area.
  • the plating liquid has a current density in a range suitable for the plating liquid.
  • the surface area is large, there is a difference in how the current density is applied between the center and the end of the conductive member 21.
  • the main pillar of the auxiliary plating rack 72 enters between the conductive member 21 and the anode 73 to avoid most of the portion having a high current density. Thus, it assists in the electrolysis adjustment in the plating solution.
  • the surface of No. 1 has a uniform thickness and uniform plating film composition without any unformed part. A plating film is formed.
  • a plating apparatus used in the plating method of the present invention will be described.
  • a plating auxiliary rack 72 made of a conductive material is used.
  • the plating auxiliary rack 72 has a rectangular parallelepiped shape composed of four main pillars. Then, this plating auxiliary rack 72 is provided with the conductive member 21 at the center and is located between the conductive member 21 and the node 73 to assist in forming a plating film. I do.
  • the plating auxiliary rack 72 forms a cathode integrally with the conductive member 21, and forms an anode in the plating liquid so that a plating film having a uniform plating film composition with a uniform film thickness is formed. Assist in adjustment.
  • the metal auxiliary rack 72 forms a cathode integrally with the conductive member 21, and the four main pillars of the metal auxiliary rack 72 are formed of the conductive member 21.
  • the electrolysis in the plating liquid is adjusted with the assistance of the plating auxiliary rack 72, and a uniform current density is applied to all surfaces of the conductive member 21.
  • the plating film thickness and the plating film composition distribution can be optimized and uniform. It becomes possible to form a plating film.
  • solder plating As described above, the case of solder plating has been described as an example. However, this plating device can be used not only for solder plating. For example, there are Sn plating, Cu plating, and Ni plating. Also in these cases, a plating film can be formed on various types of conductive members 21 under conditions suitable for plating liquid by using a plating device used in the plating method.
  • the main metal material is made of Sn alone.
  • a smooth film is formed on the 22 surfaces of the first plating film.
  • the first plating film preferentially precipitates Bi with a large ionization tendency. It has characteristics that Due to this phenomenon, the surface of the first plating film 22 is formed as a film with non-smooth precipitated particles.
  • the non-smooth particles preferentially precipitated fall off in the step of contacting the lead frame with a current-carrying terminal to determine the quality of the IC, so that the dropped particles are reduced. This is the case where the adhesion between leads leads to defects.
  • the frictional resistance of the surface of the lead frame decreases, and the lead frame stays on the transporting means in contact with the lead frame.
  • FIG. 5 is a schematic diagram of a die for bending a lead frame. Then, as shown in the drawing, a problem occurs when the lead frame 82 of the semiconductor device 81 is cut and bent by the punch 83.
  • the lead frame 82 with the plating is placed on the pedestals 84 A and B, and the sealing body of the semiconductor device 81 and the lead frame 82 are attached to the pedestal 84 A and the lead. Fix with supporting means 8 5. At this time, the leading end of the lead frame 82 is placed on the base 84 B. Then, the lead frame 82 is cut by the punch 83 and the other portion is bent. At this time, the bottom surface of the punch 83 and the surface of the lead frame 82 come into contact with each other, and the coarse precipitate particles adhere to the bottom surface of the punch 83 as chips or adhere to the lead frame 82. Phenomenon occurs.
  • the plating liquid can be freely selected, and the surface of the conductive member 21 can be made of the first single Sn.
  • the plating film 22 can be formed.
  • the plating auxiliary rack 72 is used when plating the conductive member 21, the surface of the plating auxiliary rack 72 is also used. A plating film is formed. Then, the plating auxiliary rack 72 is subjected to cleaning and the like in a subsequent process, and the plating film of the plating auxiliary rack 72 itself is dropped, but the plating auxiliary rack 72 is removed by one transport line. Repeat step 7 2. For this reason, a very small amount of Bi is mixed into the plating solution made of the metallic material of Sn alone.
  • the anode used as the electrode 73 contains a very small amount of Bi as an impurity. Therefore, Bi is mixed with Sn to a certain extent even in the plating solution of Sn alone.
  • the first plating film 22 is a plating film made of Sn alone, there is a possibility that the first plating film 22 is formed as a semiconductor device in which a very small amount of Bi exists in the coating. -Therefore, it was investigated how much Bi would be mixed into the first plating film 22 to cause a problem. When 81 is contained in 0 to 0.5% by weight with respect to 311, no precipitated particles are generated. Also, Bi is 0.5 to 1.0 weight relative to Sn.
  • the first plating film 22 is formed of a plating film of Sn alone or 1% by weight or less (particularly 0 to 0.5% by weight), on which any concentration of Sn is deposited. — It was found that even if the Bi film 23 was formed, the particles were not coarsened.
  • a semiconductor device using a lead frame described below mounts a semiconductor chip on the lead frame and performs wiring using a thin metal wire. Thereafter, the lead that is sealed and exposed from the sealing portion is bent. The single semiconductor device is electrically measured via a lead and supplied to a user. Then, on the user side, it is fixed to the electrode on the mounting board via a brazing material.
  • the plating process can be performed before mounting the semiconductor chip and after sealing.
  • plating is performed before mounting the semiconductor chip, it is necessary to prevent the plating film from being applied to the connection parts of the thin metal wires.
  • processing is performed after sealing, there is an advantage that the metal conductive portion exposed from the sealing portion can be immersed in the plating agent, and selective deposition is not required.
  • the semiconductor device has been described as a circuit device, passive elements and composites thereof may be sealed.
  • a sealing material it is possible to treat a ripened or thermosetting resin-ceramic or the like.
  • the present invention can be applied to an electrode such as a CSP in which a semiconductor chip is fixed on a matrix on an electrode on a support substrate, and then sealed and then individualized.
  • an electrode such as a CSP in which a semiconductor chip is fixed on a matrix on an electrode on a support substrate, and then sealed and then individualized.
  • means capable of supplying current to all the electrodes is required.
  • this plating apparatus has a function of moving plating liquid between both baths by means of a solder plating line, so that it can be continuously used on one transfer rail.
  • a plating film composed of a plurality of layers or a combination of a plurality of layers can be formed. Therefore, the plating liquid is not replaced every time the plating film formed on the conductive member is replaced, and the plating device is not temporarily stopped.
  • each plating liquid does not mix with each other, so that the control of the plating liquid and the equipment for the plating bath, plating, etc. Maintenance effort can also be significantly reduced.
  • a plating auxiliary rack having a rectangular parallelepiped shape composed of four main columns made of a conductive material is used. By using this, a high-quality plating film can be formed on various conductive members having different surface areas and the like.
  • a fourth effect is that in a method for manufacturing a semiconductor device in which a plurality of plating films are formed on the surface of a conductive member such as Cu alone, a Cu alloy, or a Fe—Ni alloy, (1)
  • the plating film is formed by using a plating solution mainly composed of Sn—Bi metal material, particularly Sn containing a small amount of Bi mixed therein. It is possible to realize a method for manufacturing a semiconductor device having a good plating film, in which no precipitated particles are generated on the surface of the tacky film, or even if they are generated, the particles are extremely fine.
  • FIG. 1 is a diagram illustrating a plating line used in the plating device of the present invention.
  • FIG. 2 is a diagram illustrating a plating line used in the plating device of the present invention.
  • FIG. 4 is a diagram for explaining a plating auxiliary rack used in the plating device of the present invention.
  • the figure is a layout ′ as viewed from above, in which a plating operation is performed in a plating bath used in the plating apparatus of the present invention, and
  • FIG. 5 is a diagram illustrating a method of manufacturing a semiconductor device of the present invention.
  • FIG. 6 is a view for explaining a lead frame to which a semiconductor chip for applying the present invention and a conventional plating is fixed, and FIG.
  • FIG. 7 is a drawing showing a conventional two-layer plating film according to the present invention.
  • FIG. 6 is a view for explaining a cross section of the semiconductor lead frame shown in FIG. 6 as viewed in the direction AA
  • FIG. 8 is a view for explaining a layout of the entire automatic plating apparatus according to the present invention.
  • FIG. 9 is a view for explaining a cross section of the chemical etching bath of the entire automatic plating apparatus shown in FIG. 7 of the present invention, which is shown in FIG.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

La présente invention concerne un procédé pour produire une pluralité de combinaisons de films d'électrodéposition de manière continue sur un rail de transfert unique et pour produire un film d'électrodéposition de grande qualité, qui présente une épaisseur uniforme sur les surfaces d'un cadre de connexion et de connexions. A cette fin, un appareil d'électrodéposition comprenant une pluralité de réservoirs d'électrodéposition dans lesquels se trouvent des bains de solution d'électrodéposition est placé en-dessous d'un rail de transfert. Le déplacement de la solution d'électrodéposition entre les réservoirs d'électrodéposition et les bains de solution d'électrodéposition permet de sélectionner un film d'électrodéposition à produire sur un élément conducteur (21). Il est ainsi possible de produire des combinaisons de films d'électrodéposition de manière continue sur l'élément conducteur (21) au moyen du rail de transfert unique.
PCT/JP2001/010873 2000-03-29 2001-12-12 Appareil d'electrodeposition, procede d'electrodeposition et procede pour produire un dispositif a semi-conducteurs Ceased WO2003050328A1 (fr)

Priority Applications (11)

Application Number Priority Date Filing Date Title
TW090105093A TW501277B (en) 2000-03-29 2001-03-06 Plating device
CNB011121610A CN100457979C (zh) 2000-03-29 2001-03-29 电镀装置
JP2001095257A JP3568486B2 (ja) 2000-03-29 2001-03-29 半導体装置の製造方法
CA002467037A CA2467037A1 (fr) 2000-03-29 2001-12-12 Appareil d'electrodeposition, procede d'electrodeposition et procede pour produire un dispositif a semi-conducteurs
PCT/JP2001/010873 WO2003050328A1 (fr) 2000-03-29 2001-12-12 Appareil d'electrodeposition, procede d'electrodeposition et procede pour produire un dispositif a semi-conducteurs
EP01274958A EP1464731A4 (fr) 2001-12-12 2001-12-12 Appareil d'electrodeposition, procede d'electrodeposition et procede pour produire un dispositif a semi-conducteurs
KR10-2003-7014306A KR20040058113A (ko) 2001-12-12 2001-12-12 도금 장치, 도금 방법 및 반도체 장치의 제조 방법
US10/487,158 US20040235219A1 (en) 2000-12-18 2001-12-12 Plating apparatus, plating method, and method for manufacturing semiconductor device
CNB018233600A CN1318651C (zh) 2000-03-29 2001-12-12 镀敷装置、镀敷方法及半导体装置的制造方法
JP2002253781A JP3995564B2 (ja) 2000-03-29 2002-08-30 半導体装置およびその製造方法
US11/692,695 US7772043B2 (en) 2001-12-12 2007-03-28 Plating apparatus, plating method and manufacturing method for semiconductor device

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2000091048 2000-03-29
JP2000096097 2000-03-31
JP2001095257A JP3568486B2 (ja) 2000-03-29 2001-03-29 半導体装置の製造方法
PCT/JP2001/010873 WO2003050328A1 (fr) 2000-03-29 2001-12-12 Appareil d'electrodeposition, procede d'electrodeposition et procede pour produire un dispositif a semi-conducteurs

Publications (1)

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WO2003050328A1 true WO2003050328A1 (fr) 2003-06-19

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Publication number Priority date Publication date Assignee Title
JP6433414B2 (ja) * 2015-11-18 2018-12-05 株式会社中央製作所 エレベータ式めっき装置

Citations (5)

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Publication number Priority date Publication date Assignee Title
JPH11330340A (ja) * 1998-05-21 1999-11-30 Hitachi Ltd 半導体装置およびその実装構造体
JP2001234390A (ja) * 2000-02-28 2001-08-31 Furukawa Electric Co Ltd:The メッキ方法
JP2001234389A (ja) * 2000-02-28 2001-08-31 Furukawa Electric Co Ltd:The メッキ装置
JP2001254199A (ja) * 2000-03-09 2001-09-18 Sanyo Electric Co Ltd メッキ装置
JP2001271200A (ja) * 2000-03-27 2001-10-02 Sanyo Electric Co Ltd メッキ装置

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Publication number Priority date Publication date Assignee Title
JPS58704Y2 (ja) * 1978-08-25 1983-01-07 松下電器産業株式会社 メッキ装置
JPH085560Y2 (ja) * 1990-03-14 1996-02-14 日本碍子株式会社 セラミックパッケージ用電気めっき治具

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Publication number Priority date Publication date Assignee Title
JPH11330340A (ja) * 1998-05-21 1999-11-30 Hitachi Ltd 半導体装置およびその実装構造体
JP2001234390A (ja) * 2000-02-28 2001-08-31 Furukawa Electric Co Ltd:The メッキ方法
JP2001234389A (ja) * 2000-02-28 2001-08-31 Furukawa Electric Co Ltd:The メッキ装置
JP2001254199A (ja) * 2000-03-09 2001-09-18 Sanyo Electric Co Ltd メッキ装置
JP2001271200A (ja) * 2000-03-27 2001-10-02 Sanyo Electric Co Ltd メッキ装置

Non-Patent Citations (1)

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Title
See also references of EP1464731A4 *

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