[go: up one dir, main page]

WO2003043072A1 - Etching method and plasma etcher - Google Patents

Etching method and plasma etcher Download PDF

Info

Publication number
WO2003043072A1
WO2003043072A1 PCT/JP2002/011844 JP0211844W WO03043072A1 WO 2003043072 A1 WO2003043072 A1 WO 2003043072A1 JP 0211844 W JP0211844 W JP 0211844W WO 03043072 A1 WO03043072 A1 WO 03043072A1
Authority
WO
WIPO (PCT)
Prior art keywords
etching
frequency
plasma
lower electrode
treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2002/011844
Other languages
French (fr)
Japanese (ja)
Inventor
Masanobu Honda
Kazuya Nagaseki
Hanako Kida
Koichi Yatsuda
Youbun Ito
Koichiro Inazawa
Hisataka Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Tokyo Electron Ltd
Original Assignee
Toshiba Corp
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Electron Ltd filed Critical Toshiba Corp
Priority to JP2003544806A priority Critical patent/JP4203996B2/en
Publication of WO2003043072A1 publication Critical patent/WO2003043072A1/en
Priority to US10/844,498 priority patent/US20050103441A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

A plasma etching method for setting a large etching ratio and forming a properly shaped hole, and a plasma etcher. For etching an etching target film (204) with a patterned organic film (202) as a mask, a treatment gas is introduced into a hermetic treatment container (104). A lower electrode (106) is provided with a high-frequency power source (122) of e.g. 40MHz and a high-frequency source (128) of 3.2MHz to impress two different high-frequency powers on the lower electrode. A suitable combination of the sizes of the high-frequency powers enables etching treatment by a low plasma electron density (Ne) and high self-bias voltage (Vdc).
PCT/JP2002/011844 2001-11-14 2002-11-13 Etching method and plasma etcher Ceased WO2003043072A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2003544806A JP4203996B2 (en) 2001-11-14 2002-11-13 Etching method and plasma etching apparatus
US10/844,498 US20050103441A1 (en) 2001-11-14 2004-05-13 Etching method and plasma etching apparatus

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2001349289 2001-11-14
JP2001-349289 2001-11-14
JP2002115087 2002-04-17
JP2002-115087 2002-04-17

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US10/844,498 Continuation US20050103441A1 (en) 2001-11-14 2004-05-13 Etching method and plasma etching apparatus

Publications (1)

Publication Number Publication Date
WO2003043072A1 true WO2003043072A1 (en) 2003-05-22

Family

ID=26624522

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2002/011844 Ceased WO2003043072A1 (en) 2001-11-14 2002-11-13 Etching method and plasma etcher

Country Status (3)

Country Link
JP (1) JP4203996B2 (en)
TW (1) TWI222132B (en)
WO (1) WO2003043072A1 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007516622A (en) * 2003-12-23 2007-06-21 ラム リサーチ コーポレーション Selectivity control method in plasma processing system
JP2008193015A (en) * 2007-02-08 2008-08-21 Tokyo Electron Ltd Plasma etching method, plasma etching apparatus, control program, and computer storage medium
JP2008244144A (en) * 2007-03-27 2008-10-09 Toshiba Corp Manufacturing method of semiconductor device
US8222155B2 (en) 2004-06-29 2012-07-17 Lam Research Corporation Selectivity control in a plasma processing system
CN107924837A (en) * 2015-08-12 2018-04-17 中央硝子株式会社 Dry etching method

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6925202B2 (en) * 2017-08-30 2021-08-25 東京エレクトロン株式会社 Etching method and etching equipment

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0794482A (en) * 1993-09-24 1995-04-07 Sumitomo Metal Ind Ltd Dry etching method
JP2000156370A (en) * 1998-09-16 2000-06-06 Tokyo Electron Ltd Plasma processing method
JP2001168088A (en) * 1999-10-26 2001-06-22 Samsung Electronics Co Ltd Method for etching insulating film of semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0794482A (en) * 1993-09-24 1995-04-07 Sumitomo Metal Ind Ltd Dry etching method
JP2000156370A (en) * 1998-09-16 2000-06-06 Tokyo Electron Ltd Plasma processing method
JP2001168088A (en) * 1999-10-26 2001-06-22 Samsung Electronics Co Ltd Method for etching insulating film of semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007516622A (en) * 2003-12-23 2007-06-21 ラム リサーチ コーポレーション Selectivity control method in plasma processing system
US8222155B2 (en) 2004-06-29 2012-07-17 Lam Research Corporation Selectivity control in a plasma processing system
JP2008193015A (en) * 2007-02-08 2008-08-21 Tokyo Electron Ltd Plasma etching method, plasma etching apparatus, control program, and computer storage medium
JP2008244144A (en) * 2007-03-27 2008-10-09 Toshiba Corp Manufacturing method of semiconductor device
CN107924837A (en) * 2015-08-12 2018-04-17 中央硝子株式会社 Dry etching method
CN107924837B (en) * 2015-08-12 2022-02-01 中央硝子株式会社 Dry etching method

Also Published As

Publication number Publication date
JPWO2003043072A1 (en) 2005-03-10
TWI222132B (en) 2004-10-11
JP4203996B2 (en) 2009-01-07
TW200300578A (en) 2003-06-01

Similar Documents

Publication Publication Date Title
SG130195A1 (en) High aspect ratio etch using modulation of rf powers of various frequencies
KR101860676B1 (en) Etching processing method
WO2004102638A3 (en) Rf pulsing of a narrow gap capacitively coupled reactor
KR101485384B1 (en) Plasma processing method and processing apparatus
TW200739719A (en) Plasma etching method and computer-readable storage medium
US20090078678A1 (en) Plasma processing apparatus and plasma processing method
SE0102134D0 (en) Plasma generation method and apparatus
WO2003049169A1 (en) Plasma etching method and plasma etching device
WO2005045904A3 (en) Notch-free etching of high aspect soi structures using a time division multiplex process and rf bias modulation
JP2007501530A5 (en)
WO2004027825A3 (en) Beam plasma source
SG152207A1 (en) Methods for forming high aspect ratio features on a substrate
ATE417946T1 (en) DEPOSITION METHOD USING A THERMAL PLASMA EXPANDED WITH A REPLACEABLE PLATE
TW345682B (en) Method for etching polycide structures
TW200520089A (en) Etch with ramping
TW200746292A (en) Plasma etching method, and computer-readable recording medium
WO2003043072A1 (en) Etching method and plasma etcher
US20040119006A1 (en) Neutral particle beam processing apparatus
WO2003088313A3 (en) Improved method for etching vias
JPH11195641A (en) Plasma processing method
JP3223692B2 (en) Dry etching method
WO2003028081A3 (en) Method for etching structures in an etching body by means of a plasma
EP1667216A3 (en) Dielectric etch method with high density and low bombardment energy plasma providing high etch rates
JP2007080850A5 (en)
WO1996038857A3 (en) Magnetically enhanced radio frequency reactive ion etching method and apparatus

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ OM PH PL PT RO RU SD SE SG SI SK SL TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR IE IT LU MC NL PT SE SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 2003544806

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 10844498

Country of ref document: US

122 Ep: pct application non-entry in european phase