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WO2002034684A1 - Procede de liaison anodique a basses temperatures - Google Patents

Procede de liaison anodique a basses temperatures Download PDF

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Publication number
WO2002034684A1
WO2002034684A1 PCT/EP2001/012379 EP0112379W WO0234684A1 WO 2002034684 A1 WO2002034684 A1 WO 2002034684A1 EP 0112379 W EP0112379 W EP 0112379W WO 0234684 A1 WO0234684 A1 WO 0234684A1
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WO
WIPO (PCT)
Prior art keywords
glass
mol
bonding
anodic bonding
few
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2001/012379
Other languages
German (de)
English (en)
Inventor
Volker Baier
Stefan Barth
Andreas Gebhardt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Institut fuer Physikalische Hochtechnologie eV
Original Assignee
Institut fuer Physikalische Hochtechnologie eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Institut fuer Physikalische Hochtechnologie eV filed Critical Institut fuer Physikalische Hochtechnologie eV
Priority to EP01988699A priority Critical patent/EP1335885A1/fr
Priority to AU2002221754A priority patent/AU2002221754A1/en
Publication of WO2002034684A1 publication Critical patent/WO2002034684A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00349—Creating layers of material on a substrate
    • B81C1/00357—Creating layers of material on a substrate involving bonding one or several substrates on a non-temporary support, e.g. another substrate
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/12—Silica-free oxide glass compositions
    • C03C3/16—Silica-free oxide glass compositions containing phosphorus
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C4/00—Compositions for glass with special properties
    • C03C4/18—Compositions for glass with special properties for ion-sensitive glass
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/24—Fusion seal compositions being frit compositions having non-frit additions, i.e. for use as seals between dissimilar materials, e.g. glass and metal; Glass solders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
    • B81C2201/019—Bonding or gluing multiple substrate layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2924/01—Chemical elements
    • H01L2924/01011—Sodium [Na]
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    • H01—ELECTRIC ELEMENTS
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    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
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    • H01L2924/0102—Calcium [Ca]
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    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
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    • H01L2924/01039—Yttrium [Y]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01041—Niobium [Nb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01058—Cerium [Ce]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/01—Chemical elements
    • H01L2924/01072—Hafnium [Hf]
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/01—Chemical elements
    • H01L2924/01073—Tantalum [Ta]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/1026—Compound semiconductors
    • H01L2924/1032—III-V
    • H01L2924/10329—Gallium arsenide [GaAs]

Definitions

  • the invention relates to a method for anodic bonding at low temperatures, which allows different materials to be joined together by anodic bonding.
  • Anodic bonding is a technology that has been well established in microsystems technology for connecting glass with silicon for various purposes. For example, such connections are required for covers, housings, for SOI technology or for sensor and actuator components. It is also known to connect silicon or metals (such as aluminum, copper etc.) coated with dielectric layers (e.g. nitride, carbide, oxide) with a dielectric material (preferably glass) with a correspondingly high ionic conductivity. The anodic bonding process is used in the manufacture of
  • Sensors in particular, for example, pressure and acceleration sensors, and actuators and SOI wafers, are widely used [see: Esashi M., Ura N., Matsumoto Y., Anodic Bonding for Integrated Capacitive Sensors, Micro Electro Mechanical Systems '92, Travemünde , February 4th-7th ' , 1992 or Harendt Gh., Appel W., Graf H.-G., Höfflinger B., Penteker E., Wafer Bonding and its Application to Silicon-on-Insulator Fabrication, Micromechanics Europe '90, Berlin, 26.- 27.11.1990].
  • silicon wafers with pyrex glass panes are bonded at relatively high temperatures of approx.
  • thermoelectric layers 400 ° C and a voltage of a few 100 V to approx. 2000 V, which has a restrictive effect on a number of practical applications because, due to the high temperatures required, component functions such as For example, temperature-sensitive thin thermoelectric layers, passivation and insulation layers made of organic substances can be destroyed.
  • pyrex glass is deposited as a thin layer on silicon by magnetron sputtering in a high vacuum, and then another silicon wafer can also be used at temperatures around 400 ° C, but at a lower voltage
  • bond connections have proven to be particularly problematic, both with regard to their manufacturability and permanent strength, in which silicon components are completely or partially provided with dielectric and / or metallic coatings, as is the case here This is the case, for example, in the production of sensors which contain the dielectric layers required for microsystem technology, such as SiO 2 or Si3N4, and conductive layers for contacting and signal routing. In any case, both joining partners must be flat and have very low roughness.
  • the invention has for its object to provide a method and a suitable material that enables anodic bonding at room temperature.
  • the essence of the invention is to find materials that have a high ionic conductivity in the order of> 10 "9 ⁇ " 1 cm “1 have negligible electronic conductivity at working temperature, e.g. room temperature (300 K).
  • working temperature e.g. room temperature (300 K).
  • this selection criterion is deliberately omitted in the present invention, so that materials can be connected by anodic bonding, which may have differences in the thermal expansion coefficient in about half the order of magnitude in the intended operating temperature range.
  • FIG. 1 shows an example of a plate containing cavities, which is anodically bonded between two covering plates in a transparent representation
  • Fig. 2 shows an assembly according to Fig. 1 in a non-transparent representation.
  • a first exemplary embodiment the bonding of platelets 2, consisting of silicon or silicon, provided with dielectric layers, to a platelet 1, consisting of a phosphate glass, is to be described.
  • a phosphate glass with the composition (in mol%) Na2 ⁇ : ND2O5: P 2 ⁇ 5 55: 15: 30 is used for this.
  • the flat glass substrate and / or the Si substrate to be connected to it is provided with a plurality of microcavities 3 or, depending on the intended purpose, with a wide variety of recesses.
  • the substrates to be connected have mutually corresponding flat surfaces which are brought into contact with one another.
  • the corresponding components, liquids, biological materials or the like are placed in the cavities 3 mentioned.
  • a bonding voltage of approx. 300 - 400 V is applied for approx. 2 - 5 min for a glass thickness of approx. 2 mm.
  • a charge of approx. 1 C / cm is implemented in the glass.
  • Both glass systems can be sputtered using both DC and HF processes, the sputtering layers also being bondable, with significantly higher temperature ranges of the bond stability. Any materials, e.g. also metals for which platelets 2 are used, which can be anodically bonded to one another using the phosphate glass layers used.
  • the glass components to be bonded can be in layer form or as bulk material, the components to be connected being brought into close mechanical contact with one another and the layer composite being held at temperatures of the order of 300 K as a function of the dielectric and / or electrically conductive layers and the bonding voltage , wherein the layer composite to be bonded is subjected to a DC electrical voltage, which is determined depending on the thickness of the glass component, starting from a few micrometers layer thickness to a few millimeters, from a few V to a few 100 V, adapted.
  • the advantage of the described method lies in the low bonding temperature, a relatively low bonding voltage and bonding time, so that both solvents and biological objects can be provided in the receptacles of the substrates that have not been able to withstand the bonding temperatures that were customary up to now.
  • Any tests, syntheses or the like can be carried out on the hermetically sealed components and preparations under closed conditions.
  • these cavities can serve as mini autoclaves in which highly explosive chemical tests, e.g. Miniature explosions, which are e.g. using lasers, electrical or other thermal sources and can even examine optically through the glass.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Organic Chemistry (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Joining Of Glass To Other Materials (AREA)

Abstract

La présente invention concerne un procédé de liaison anodique. L'objectif de la présente invention est de mettre au point un matériau adapté à ce procédé, qui permette une liaison anodique à température ambiante. A cette fin, un verre phosphaté contenant du niobium ou du tantale et présentant une conductivité d'ions alcalins > 10<-9> OMEGA <-1>cm<-1> à 300 K est utilisé en tant que verre de liaison.
PCT/EP2001/012379 2000-10-27 2001-10-26 Procede de liaison anodique a basses temperatures Ceased WO2002034684A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP01988699A EP1335885A1 (fr) 2000-10-27 2001-10-26 Procede de liaison anodique a basses temperatures
AU2002221754A AU2002221754A1 (en) 2000-10-27 2001-10-26 Method for anodic bonding at low temperatures

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10053865A DE10053865C1 (de) 2000-10-27 2000-10-27 Verfahren zum anodischen Bonden bei niedrigen Temperaturen
DE10053865.7 2000-10-27

Publications (1)

Publication Number Publication Date
WO2002034684A1 true WO2002034684A1 (fr) 2002-05-02

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2001/012379 Ceased WO2002034684A1 (fr) 2000-10-27 2001-10-26 Procede de liaison anodique a basses temperatures

Country Status (4)

Country Link
EP (1) EP1335885A1 (fr)
AU (1) AU2002221754A1 (fr)
DE (1) DE10053865C1 (fr)
WO (1) WO2002034684A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004011368A3 (fr) * 2002-07-30 2004-06-10 Abbott Lab Procede de fixation anodique basse temperature utilisant de l'energie focalisee pour l'assemblage de systemes micro-usines
US11827562B2 (en) 2017-12-21 2023-11-28 Schott Glass Technologies (Suzhou) Co. Ltd Bondable glass and low auto-fluorescence article and method of making it

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10308048A1 (de) * 2003-02-26 2004-09-09 Abb Research Ltd. Verfahren zur Herstellung von Trägerelementen
DE10350038A1 (de) * 2003-10-27 2005-05-25 Robert Bosch Gmbh Verfahren zum anodischen Bonden von Wafern und Vorrichtung

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19545422A1 (de) * 1995-12-06 1997-06-12 Inst Physikalische Hochtech Ev Bondglas und Verfahren zum anodischen Bonden bei niedrigen Temperaturen

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3244197B2 (ja) * 1992-10-26 2002-01-07 日本合成化学工業株式会社 ポリビニルアルコール系樹脂の溶融成形方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19545422A1 (de) * 1995-12-06 1997-06-12 Inst Physikalische Hochtech Ev Bondglas und Verfahren zum anodischen Bonden bei niedrigen Temperaturen
DE19545422C2 (de) 1995-12-06 1998-11-19 Inst Physikalische Hochtech Ev Verfahren zum anodischen Bonden von Siliziumkomponenten mit Glaskomponenten

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
CHOWDARI B V R ET AL: "ELECTRICAL AND ELECTROCHEMICAL CHARACTERIZATION OF LI2O:P2O5:NB2O5-BASED SOLID ELECTROLYTES", JOURNAL OF NON-CRYSTALLINE SOLIDS, NORTH-HOLLAND PHYSICS PUBLISHING. AMSTERDAM, NL, vol. 110, no. 1, 1 July 1989 (1989-07-01), pages 101 - 110, XP000033873, ISSN: 0022-3093 *
CHOWDARI B V R ET AL: "IONIC CONDUCTIVITY STUDIES OF THE VITREOUS LI2O:P2O5:TA2O5 SYSTEM", JOURNAL OF NON-CRYSTALLINE SOLIDS, NORTH-HOLLAND PHYSICS PUBLISHING. AMSTERDAM, NL, vol. 108, no. 3, 1 April 1989 (1989-04-01), pages 323 - 332, XP000007839, ISSN: 0022-3093 *
MARTIN S W: "IONIC CONDUCTION IN PHOSPHATE GLASSES", JOURNAL OF THE AMERICAN CERAMIC SOCIETY, AMERICAN CERAMIC SOCIETY. COLUMBUS, US, vol. 74, no. 8, 1 August 1991 (1991-08-01), pages 1767 - 1783, XP000230593, ISSN: 0002-7820 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004011368A3 (fr) * 2002-07-30 2004-06-10 Abbott Lab Procede de fixation anodique basse temperature utilisant de l'energie focalisee pour l'assemblage de systemes micro-usines
US11827562B2 (en) 2017-12-21 2023-11-28 Schott Glass Technologies (Suzhou) Co. Ltd Bondable glass and low auto-fluorescence article and method of making it

Also Published As

Publication number Publication date
AU2002221754A1 (en) 2002-05-06
EP1335885A1 (fr) 2003-08-20
DE10053865C1 (de) 2002-04-04

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