WO2002031493A1 - Method of treating metal analysis sample and device thereof - Google Patents
Method of treating metal analysis sample and device thereof Download PDFInfo
- Publication number
- WO2002031493A1 WO2002031493A1 PCT/JP2001/008932 JP0108932W WO0231493A1 WO 2002031493 A1 WO2002031493 A1 WO 2002031493A1 JP 0108932 W JP0108932 W JP 0108932W WO 0231493 A1 WO0231493 A1 WO 0231493A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- sample
- sputtering
- metal
- receiver
- metal analysis
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/32—Polishing; Etching
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
- G01N33/20—Metals
- G01N33/202—Constituents thereof
- G01N33/2022—Non-metallic constituents
Definitions
- the present invention relates to a pretreatment method and apparatus for a metal sample to be subjected to elemental analysis (hereinafter, also referred to as a metal analysis sample).
- the present invention relates to a pretreatment method and a pretreatment device for removing contaminants adhering to or adsorbing on the surface of a metal sample prior to analyzing a trace element in the metal.
- the present invention relates to an apparatus for analyzing elements in metals provided with this pretreatment device.
- the surface of the metal analysis sample is still contaminated by chemicals and contaminants removed during cleaning and polishing, or by reoxidation by air before measurement by the analyzer. ing.
- Analytical value of such residual contamination and recontamination In the case of quantitative analysis of oxygen, for example, the effect on oxygen can be as large as l to 2 Ppm in terms of concentration, resulting in ppm level errors (iron and steel vol. 85, p. 138 (1999), etc. ).
- adsorption or oxidation of atmospheric substances is easily caused instantaneously, and it is important to remove recontaminated parts and residual contaminated parts to improve analysis accuracy.
- Japanese Patent Application Laid-Open No. 8-211043 discloses a method in which a metal analysis sample is discharged in a low-pressure gas to remove contaminants on the surface, and then transferred directly to an analyzer for carbon analysis. I have. Note that the cleaning process by the discharge is referred to as a sputtering process.
- the method disclosed in the above-mentioned Japanese Patent Application Laid-Open No. 8-211043 has the disadvantage that the metal sample is placed on the opposite side of the sample (e.g., It is necessary to rotate or invert the metal analysis sample in order to clean the contact surface with the metal by sputtering.
- the operation of inverting the sample is not only complicated, but also may cause the metal analysis sample to come into contact with the atmosphere or to fall off the sample stage. If the sample falls off the stage, it can no longer be analyzed.
- Japanese Patent Application Laid-Open No. 8-211043 it is practically impossible to clean the rear surface side (the contact surface with the sample table) of the metal sample occupying a large area by sputtering.
- Japanese Patent Application Laid-Open No. 11-316220 discloses that after a metal analysis sample is subjected to a sputtering treatment in a pretreatment chamber in an inert atmosphere connected to an analyzer, the sample from which surface contaminants have been removed is exposed to the atmosphere.
- a method has been disclosed for moving to an elemental analyzer for analysis. In this method, since the metal sample is supported at a point from the side, almost the entire surface of the analysis sample can be simultaneously decontaminated.
- the present invention solves the above-mentioned problems of the prior art in order to increase the precision of quantitative analysis of trace components in metal, and provides a pretreatment device and a pretreatment method capable of easily and efficiently removing contaminants on the surface of a metal sample. I will provide a. In addition, the Another object is to provide an analyzer. Disclosure of the invention
- the present invention provides: (1) a processing chamber having an openable and closable sample loading port at the upper part and an openable and closable sample outlet at the lower part, and having a gas inlet and a gas outlet; (2) a processing chamber for sputtering. (3) a sample transport rod which is joined to the one-sided electrode and a dual-purpose sample receiver, and is installed through at least one side wall of the processing chamber and capable of substantially horizontal movement and axial rotation; and A metal consisting of a counter electrode for sputtering installed at least facing the interior of the room so as not to impede the loading and discharging of the sample, and between which the sample receiver is placed so as to be able to be placed.
- This is a pretreatment device for analysis samples.
- the sample contact area of the sample receiver is preferably 10% or less of the surface area of the metal analysis sample.
- At least the facing counter electrode for sputtering which is installed to face each other, is cylindrical.
- the present invention also provides an invention of an elemental analyzer in a metal in which the sample inlet of the elemental analyzer is connected below the sample outlet of any of the pretreatment devices described above.
- a metal analysis sample is loaded onto the sample receiver from the sample loading port, and (2) the processing chamber is evacuated to a reduced pressure atmosphere.
- the metal analysis sample on the sample receiver is placed between the at least opposing counter electrodes for sputtering by the sample carrier rod.
- a voltage is applied between the electrode on the sample side and a counter electrode for sputtering, and the surface of the metal analysis sample is cleaned by sputtering.
- the sample receiver is moved to the sample transport rod.
- the invention also provides a pretreatment method for elemental analysis in metals.
- FIG. 1 is an explanatory view showing one example of a metal analyzer provided with a pretreatment device for a metal analysis sample according to the present invention.
- FIG. 2 is a perspective view showing an example of a mounted state of a sample receiver and a metal analysis sample according to the present invention.
- FIG. 3 is a perspective view showing another example of the mounted state of the sample receiver and the metal analysis sample in the present invention.
- the present invention can be broadly classified into three inventions: a pretreatment device for a metal analysis sample and a pretreatment method, and an apparatus for analyzing elements in metals provided with the pretreatment device.
- a pretreatment device for a metal analysis sample and a pretreatment method an apparatus for analyzing elements in metals provided with the pretreatment device.
- an apparatus for analyzing elements in metals provided with the pretreatment device.
- the pretreatment method according to the present invention includes the steps of, as disclosed in Japanese Patent Application Laid-Open No. H11-316220, for example, by analyzing the surface of a metal analysis sample in a processing chamber maintained in an inert gas atmosphere prior to analysis of component elements in the metal. It can be suitably applied to a pretreatment method for cleaning by sputtering.
- the metal analysis sample is supported at two points from the side, but in the present invention, the metal analysis sample is used as a sample receiver supported from the bottom side, and the sample contact area of the sample receiver is smaller.
- One feature is that it uses a structure that is as small as possible.
- FIG. 1 is an explanatory view showing one example of a pretreatment of a metal analysis sample according to the present invention.
- the metal analysis sample S has its surface contaminated portion removed in the processing chamber 1 by a sputtering process. It is led into the analyzer 13.
- the processing chamber 1 is preferably a housing, and has an inert gas inlet and an inert gas inlet. It is equipped with a tret, and has a sample loading port 12 at the top of the main body and a sample outlet 9 at the bottom of the main body.
- the sample outlet 9 is connected to a sample inlet 10 of an element analyzer 13 through a slide gate 11 capable of maintaining airtightness.
- the processing chamber 1 is provided with a sample receiver 3 which also functions as a cathode for sputtering, and the sample receiver 3 is joined to a sample transport 4.
- the transport rod 4 penetrates the side wall of the processing chamber 1 and is externally connected to the moving and rotating mechanism 2. Thereby, the metal analysis sample S can be moved substantially horizontally back and forth while the metal analysis sample S is placed on the analysis sample receiver 3, and the metal analysis sample S can be received by turning the transport rod 4 at a predetermined position. You can now fall from.
- the anodes 7 for sputtering are installed to face each other.
- the opposed anode 7 is installed so that the sample receiver 3 on which the metal analysis sample S is placed can be arranged therebetween.
- the sample receiver 3 and the anode 7 are connected to a power supply (not shown) that generates a high voltage, for example, 1 KV.
- the metal analysis sample S is loaded into the sample receiver 3 from the sample loading inlet 12.
- an inert gas such as an argon gas is used to adjust the pressure to a predetermined pressure in the range of 100 Pa to 1000 Pa.
- the metal analysis sample S placed on the sample receiver 3 is horizontally moved between the opposed anodes 7 by the sample transport rod 4. In this state, a voltage is applied between the sample receiver 3 (cathode) and the counter electrode 7 (anode), and contaminants on the surface of the metal analysis sample S are removed by sputtering.
- the slide gate 11 is opened and the sample transport rod 4 is rotated.
- the metal analysis sample S is dropped into the element analyzer through the sample inlet 10 of the element analyzer. After that, elemental analysis is performed.
- the discharge can be performed with the polarity reversed, with the sample receiver 3 on the anode side and the counter electrode 7 on the cathode side.
- the metal analysis sample S can be supported by, for example, two rod-shaped sample receivers 3 as shown in FIG.
- the metal analysis sample While being placed on the sample receiver 3, it is supported with an extremely small contact area with the bottom surface.
- the metal analysis sample S is sputtered except for a small contact portion with the support 3.
- the sputtering itself has the property of wrapping around the metal analysis sample S serving as an electrode, almost the entire surface of the sample S can be simultaneously contaminated and removed.
- handling is simple and stable.
- the sample receiver 3 is configured to support the metal analysis sample S from the bottom surface side, and the contact area of the sample receiver in contact with the bottom surface of the metal analysis sample S is reduced. It must be extremely small, and furthermore, a sufficient gap must be ensured on the bottom surface side of the metal analysis sample S for high-speed collision of sputtering ions (eg, argon gas ions).
- sputtering ions eg, argon gas ions
- a wire mesh shape as shown in FIG. 3 is also exemplified.
- any material having a small contact area with the bottom surface of the metal analysis sample S and a large gap as viewed from the counter electrode 7 may be used, such as a square or circular frame.
- the contact area between the metal analysis sample S and the sample receiver 3 is preferably designed to be as small as possible because the removal rate of surface contaminants greatly affects the analysis error.
- the sample contact area of the preferable sample receiver is 10% or less of the surface area of the metal analysis sample S. More preferably, it is 5% or less of the bottom area of the metal analysis sample, and more preferably 3% or less of the bottom area of the metal analysis sample.
- the sample receiver 3 keeps the metal analysis sample S at a constant polarity during the removal of the surface contamination by sputtering, it is preferable that the sample receiver 3 has higher electric conductivity.
- a material that does not generate gas or other pollutants due to the heat generated during the sputtering process should be selected. From such a viewpoint, for example, it is preferable to use 18-8 stainless steel.
- the preliminary processing apparatus of the present invention is configured so that the sample receiver 3 can move forward and backward in the processing chamber 1 and rotate freely.
- the sample receiver 3 is moved by the moving and rotating mechanism 2 via the sample transport rod 4.
- the moving / rotating mechanism 2 allows the sample receiver 3 to move forward and backward in the processing chamber 1 by a known means such as a motor and a cylinder.
- the "at least a counter electrode for sputtering that is installed to face the other" in the present invention will be described in detail.
- two counter electrodes 7 anodes
- a sample receiver cathode
- the counter electrode is installed facing the metal analysis sample at a position that is not symmetrical.However, in general, uniform sputtering reduces the analysis error, so the counter electrode is It is preferable to set them at symmetric positions. From the viewpoint of performing sputtering more uniformly and efficiently, it is preferable that the counter electrode is cylindrical, and it is preferable to arrange the sample receiver in which the metal sample is placed inside the cylindrical counter electrode. Good.
- the cylinder may be, for example, a square tube, but more preferably a cylinder. Also, a curved counter electrode can be used.
- the curved counter electrode may be formed by cutting out a part of a cylindrical counter electrode and forming a substantially cylindrical shape, or a semi-circular counter electrode may be arranged to face each other.
- the counter electrode there are an installation method in which a plurality of flat and curved counter electrodes are opposed to each other with respect to a metal analysis sample, and an installation method in which the counter electrode is substantially cylindrical or has a cylindrical shape and is opposed to each other. Therefore, in the present application, it was defined as "at least installed facing each other".
- the surface contamination of the metal Removal can be efficiently performed in a relatively narrow space surrounded by the counter electrode 7.
- the present invention can be applied irrespective of the type of metal to be analyzed, and can be applied irrespective of the type of element to be analyzed or the analysis method.
- the type of sputtering is not limited, and can be replaced by arc sputtering.
- the analysis sample receiver and the vicinity of the counter electrode can be directly or indirectly cooled by a suitable refrigerant.
- the oxygen in the steel sample was determined by melting-infrared absorption method in an inert gas.
- Table 1 shows the results.
- the examples in Table 1 are the results of performing oxygen analysis after performing the pretreatment by the pretreatment device of the present invention shown in FIG.
- the comparative example is the result of direct oxygen analysis without performing pretreatment. Is the average value of the oxygen concentration measured five times for each of the two samples A and B, and ⁇ is the standard deviation (variation).
- the oxygen analysis value is about 1-2 ppm lower than that of the comparative example, and it can be seen that the analysis accuracy is improved.
- the pretreatment apparatus and the pretreatment method of this invention the pretreatment which cleans the surface of a metal analysis sample by sputtering can be easily performed, preventing recontamination etc. by exposure to air. Furthermore, according to the elemental analysis apparatus for metals equipped with the pretreatment apparatus of the present invention, the influence of contaminants on the metal surface is extremely small, a high-precision elemental analysis value can be obtained, and the pretreatment of the analysis sample can be performed. The time required is also significantly reduced. Therefore, according to the present invention, the purity of not only ferrous materials but also non-ferrous metal materials can be quickly and accurately evaluated, and a series of analytical operations can be automated.
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- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Food Science & Technology (AREA)
- Medicinal Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Investigating And Analyzing Materials By Characteristic Methods (AREA)
- Sampling And Sample Adjustment (AREA)
Description
Claims
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/181,912 US6726739B2 (en) | 2000-10-12 | 2001-10-11 | Method of treating metal analysis sample and device thereof |
| EP01974788A EP1279958A4 (en) | 2000-10-12 | 2001-10-11 | METHOD FOR TREATING A METALLANALYSIS SAMPLE AND ESTABLISHMENT THEREFOR |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000311479 | 2000-10-12 | ||
| JP2000-311479 | 2000-10-12 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2002031493A1 true WO2002031493A1 (en) | 2002-04-18 |
Family
ID=18791232
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP2001/008932 Ceased WO2002031493A1 (en) | 2000-10-12 | 2001-10-11 | Method of treating metal analysis sample and device thereof |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US6726739B2 (ja) |
| EP (1) | EP1279958A4 (ja) |
| WO (1) | WO2002031493A1 (ja) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7187947B1 (en) | 2000-03-28 | 2007-03-06 | Affinity Labs, Llc | System and method for communicating selected information to an electronic device |
| JP2001343309A (ja) * | 2000-06-01 | 2001-12-14 | Kawasaki Steel Corp | 金属分析試料の予備処理方法および装置 |
| CN104865349A (zh) * | 2015-04-27 | 2015-08-26 | 安徽省农业科学院土壤肥料研究所 | 蓝莓叶片营养诊断及施肥方法 |
| CN105319327B (zh) * | 2015-10-28 | 2018-03-09 | 青岛农业大学 | 茶树全生长季叶片矿质营养诊断技术 |
| CN114166590B (zh) * | 2021-11-15 | 2022-07-15 | 哈尔滨工业大学(威海) | 一种用于介观尺度试样力学性能测试的磁控溅射设备 |
| CN115463873B (zh) * | 2022-07-11 | 2023-08-25 | 贵阳铝镁设计研究院有限公司 | 一种用于块状金属样品检测中的压紧清洁装置及方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6283953U (ja) * | 1985-11-12 | 1987-05-28 | ||
| JPH01308939A (ja) * | 1989-03-28 | 1989-12-13 | Showa Alum Corp | 金属材中のガス分析装置 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0721039Y2 (ja) | 1984-04-27 | 1995-05-15 | 株式会社エ−ユ−イ−研究所 | プラグイン形カ−トリツジ |
| JPS6283953A (ja) | 1985-10-04 | 1987-04-17 | Canon Inc | 記録装置 |
| JPH08211043A (ja) | 1995-02-01 | 1996-08-20 | Nippon Steel Corp | 金属中炭素分析試料用予備処理装置 |
| US5922179A (en) * | 1996-12-20 | 1999-07-13 | Gatan, Inc. | Apparatus for etching and coating sample specimens for microscopic analysis |
| JPH11316220A (ja) | 1998-02-26 | 1999-11-16 | Kawasaki Steel Corp | 金属中微量元素の高精度分析方法および装置 |
-
2001
- 2001-10-11 EP EP01974788A patent/EP1279958A4/en not_active Withdrawn
- 2001-10-11 US US10/181,912 patent/US6726739B2/en not_active Expired - Fee Related
- 2001-10-11 WO PCT/JP2001/008932 patent/WO2002031493A1/ja not_active Ceased
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6283953U (ja) * | 1985-11-12 | 1987-05-28 | ||
| JPH01308939A (ja) * | 1989-03-28 | 1989-12-13 | Showa Alum Corp | 金属材中のガス分析装置 |
Non-Patent Citations (1)
| Title |
|---|
| See also references of EP1279958A4 * |
Also Published As
| Publication number | Publication date |
|---|---|
| EP1279958A4 (en) | 2005-02-23 |
| US20030010633A1 (en) | 2003-01-16 |
| US6726739B2 (en) | 2004-04-27 |
| EP1279958A1 (en) | 2003-01-29 |
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