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WO2002030109A1 - Dispositif et procede de formation d"images - Google Patents

Dispositif et procede de formation d"images Download PDF

Info

Publication number
WO2002030109A1
WO2002030109A1 PCT/JP2001/008721 JP0108721W WO0230109A1 WO 2002030109 A1 WO2002030109 A1 WO 2002030109A1 JP 0108721 W JP0108721 W JP 0108721W WO 0230109 A1 WO0230109 A1 WO 0230109A1
Authority
WO
WIPO (PCT)
Prior art keywords
vertical transfer
transfer registers
light
voltage supply
imaging
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2001/008721
Other languages
English (en)
French (fr)
Inventor
Kouichi Harada
Tomoo Mitsunaga
Seiji Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2000303519A external-priority patent/JP2002112121A/ja
Priority claimed from JP2000303520A external-priority patent/JP2002112120A/ja
Priority claimed from JP2000307082A external-priority patent/JP4482781B2/ja
Application filed by Sony Corp filed Critical Sony Corp
Priority to EP01972676A priority Critical patent/EP1324599A4/en
Priority to US10/148,838 priority patent/US7719573B2/en
Publication of WO2002030109A1 publication Critical patent/WO2002030109A1/ja
Anticipated expiration legal-status Critical
Priority to US12/633,044 priority patent/US8390691B2/en
Ceased legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/15Charge-coupled device [CCD] image sensors
    • H10F39/153Two-dimensional or three-dimensional array CCD image sensors
    • H10F39/1536Frame transfer
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/70Circuitry for compensating brightness variation in the scene
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/133Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements including elements passing panchromatic light, e.g. filters passing white light
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50Control of the SSIS exposure
    • H04N25/57Control of the dynamic range
    • H04N25/58Control of the dynamic range involving two or more exposures
    • H04N25/581Control of the dynamic range involving two or more exposures acquired simultaneously
    • H04N25/583Control of the dynamic range involving two or more exposures acquired simultaneously with different integration times
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/71Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/73Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using interline transfer [IT]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/15Charge-coupled device [CCD] image sensors
    • H10F39/151Geometry or disposition of pixel elements, address lines or gate electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/805Coatings

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
PCT/JP2001/008721 2000-10-03 2001-10-03 Dispositif et procede de formation d"images Ceased WO2002030109A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP01972676A EP1324599A4 (en) 2000-10-03 2001-10-03 FIGURE APPARATUS AND ILLUSTRATIVE METHOD
US10/148,838 US7719573B2 (en) 2000-10-03 2001-10-03 Device and method for processing photographic image data
US12/633,044 US8390691B2 (en) 2000-10-03 2009-12-08 Device and method for processing photographic image data

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2000-303520 2000-10-03
JP2000303519A JP2002112121A (ja) 2000-10-03 2000-10-03 撮像装置および方法
JP2000-303519 2000-10-03
JP2000303520A JP2002112120A (ja) 2000-10-03 2000-10-03 撮像装置および方法
JP2000307082A JP4482781B2 (ja) 2000-10-06 2000-10-06 撮像装置および方法
JP2000-307082 2000-10-06

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US10148838 A-371-Of-International 2001-10-03
US12/633,044 Continuation US8390691B2 (en) 2000-10-03 2009-12-08 Device and method for processing photographic image data

Publications (1)

Publication Number Publication Date
WO2002030109A1 true WO2002030109A1 (fr) 2002-04-11

Family

ID=27344845

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2001/008721 Ceased WO2002030109A1 (fr) 2000-10-03 2001-10-03 Dispositif et procede de formation d"images

Country Status (3)

Country Link
US (2) US7719573B2 (ja)
EP (1) EP1324599A4 (ja)
WO (1) WO2002030109A1 (ja)

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US7605940B2 (en) * 1999-09-17 2009-10-20 Silverbrook Research Pty Ltd Sensing device for coded data
US8416468B2 (en) 1999-09-17 2013-04-09 Silverbrook Research Pty Ltd Sensing device for subsampling imaged coded data
US7623168B2 (en) * 2000-07-13 2009-11-24 Eastman Kodak Company Method and apparatus to extend the effective dynamic range of an image sensing device
JP2003009002A (ja) * 2001-06-22 2003-01-10 Sanyo Electric Co Ltd 撮像装置
KR100975444B1 (ko) * 2003-04-30 2010-08-11 크로스텍 캐피탈, 엘엘씨 리셋전압 보상부를 구비한 이미지센서
US7920908B2 (en) * 2003-10-16 2011-04-05 David Hattery Multispectral imaging for quantitative contrast of functional and structural features of layers inside optically dense media such as tissue
DE102004011147B3 (de) * 2004-03-08 2005-11-03 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Bildaufnahmevorrichtung mit mehreren Bildaufnahmemodi
EP1788956B1 (en) * 2004-09-17 2011-11-09 Codman & Shurtleff, Inc. Vascular occlusion device with an embolic mesh ribbon
US7875840B2 (en) * 2006-11-16 2011-01-25 Aptina Imaging Corporation Imager device with anti-fuse pixels and recessed color filter array
US7593248B2 (en) * 2006-11-16 2009-09-22 Aptina Imaging Corporation Method, apparatus and system providing a one-time programmable memory device
US7940311B2 (en) * 2007-10-03 2011-05-10 Nokia Corporation Multi-exposure pattern for enhancing dynamic range of images
DE102008027188A1 (de) * 2008-06-06 2009-12-10 Volkswagen Ag Bildaufnahmevorrichtung

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JPH0287785A (ja) 1988-09-26 1990-03-28 Konica Corp 撮像装置
JPH0759012A (ja) * 1993-06-30 1995-03-03 Sony Corp 固体撮像装置及びその駆動方法
JPH09191099A (ja) * 1996-01-09 1997-07-22 Sony Corp 固体撮像素子およびその読み出し方法

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JPH06315068A (ja) * 1993-04-28 1994-11-08 Xerox Corp 短期および長期の積分周期を有するラスタ入力スキャナ
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JPH07254966A (ja) 1995-02-15 1995-10-03 Olympus Optical Co Ltd 電子的撮像装置
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Publication number Priority date Publication date Assignee Title
JPH0287785A (ja) 1988-09-26 1990-03-28 Konica Corp 撮像装置
JPH0759012A (ja) * 1993-06-30 1995-03-03 Sony Corp 固体撮像装置及びその駆動方法
JPH09191099A (ja) * 1996-01-09 1997-07-22 Sony Corp 固体撮像素子およびその読み出し方法

Non-Patent Citations (1)

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Title
See also references of EP1324599A4

Also Published As

Publication number Publication date
US20100085460A1 (en) 2010-04-08
US20030052976A1 (en) 2003-03-20
EP1324599A1 (en) 2003-07-02
EP1324599A4 (en) 2006-07-19
US7719573B2 (en) 2010-05-18
US8390691B2 (en) 2013-03-05

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