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WO2002029901A1 - Thin film transistor, liquid crystal display device comprising it, and electroluminescence display device - Google Patents

Thin film transistor, liquid crystal display device comprising it, and electroluminescence display device Download PDF

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Publication number
WO2002029901A1
WO2002029901A1 PCT/JP2001/007459 JP0107459W WO0229901A1 WO 2002029901 A1 WO2002029901 A1 WO 2002029901A1 JP 0107459 W JP0107459 W JP 0107459W WO 0229901 A1 WO0229901 A1 WO 0229901A1
Authority
WO
WIPO (PCT)
Prior art keywords
display device
thin film
film transistor
liquid crystal
insulation film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2001/007459
Other languages
French (fr)
Japanese (ja)
Inventor
Kazuki Kitamura
Tetsuo Kawakita
Hiroshi Sano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of WO2002029901A1 publication Critical patent/WO2002029901A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes

Landscapes

  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

A thin film transistor comprises a substrate (11), an undercoat insulation film (12) formed over the substrate (11), a silicon-based semiconductor film (14) having a source region (32), a channel region (61), and a drain region (33) formed on the undercoat insulation film (12), a gate insulation film (16) adjacent to the channel region (61) of the semiconductor film (14), and a filmy gate electrode (31) adjacent to the gate insulation film (16). The sum of the inner stresses of the gate electrode (31) and the gate insulation film (16) is tensile.
PCT/JP2001/007459 2000-09-29 2001-08-30 Thin film transistor, liquid crystal display device comprising it, and electroluminescence display device Ceased WO2002029901A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000-300065 2000-09-29
JP2000300065 2000-09-29

Publications (1)

Publication Number Publication Date
WO2002029901A1 true WO2002029901A1 (en) 2002-04-11

Family

ID=18781789

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2001/007459 Ceased WO2002029901A1 (en) 2000-09-29 2001-08-30 Thin film transistor, liquid crystal display device comprising it, and electroluminescence display device

Country Status (2)

Country Link
TW (1) TW503584B (en)
WO (1) WO2002029901A1 (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05129286A (en) * 1991-11-07 1993-05-25 Casio Comput Co Ltd Silicon nitride film
JPH07115203A (en) * 1993-10-20 1995-05-02 Matsushita Electric Ind Co Ltd Thin film, method for manufacturing thin film, and thin film transistor using the same
JPH09283518A (en) * 1996-04-12 1997-10-31 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacturing method thereof
US5815223A (en) * 1994-06-20 1998-09-29 Canon Kabushiki Kaisha Display device having a silicon substrate, a locos film formed on the substrate, a tensile stress film formed on the locos film, and TFTs formed on the tensile stress film
US5817548A (en) * 1995-11-10 1998-10-06 Sony Corporation Method for fabricating thin film transistor device
JP2000200763A (en) * 1998-12-29 2000-07-18 Semiconductor Energy Lab Co Ltd Semiconductor device and its manufacture

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05129286A (en) * 1991-11-07 1993-05-25 Casio Comput Co Ltd Silicon nitride film
JPH07115203A (en) * 1993-10-20 1995-05-02 Matsushita Electric Ind Co Ltd Thin film, method for manufacturing thin film, and thin film transistor using the same
US5815223A (en) * 1994-06-20 1998-09-29 Canon Kabushiki Kaisha Display device having a silicon substrate, a locos film formed on the substrate, a tensile stress film formed on the locos film, and TFTs formed on the tensile stress film
US5817548A (en) * 1995-11-10 1998-10-06 Sony Corporation Method for fabricating thin film transistor device
JPH09283518A (en) * 1996-04-12 1997-10-31 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacturing method thereof
JP2000200763A (en) * 1998-12-29 2000-07-18 Semiconductor Energy Lab Co Ltd Semiconductor device and its manufacture

Also Published As

Publication number Publication date
TW503584B (en) 2002-09-21

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