[go: up one dir, main page]

WO2002019407A3 - A method for spatial distribution of chemical groups on a semiconductor surface - Google Patents

A method for spatial distribution of chemical groups on a semiconductor surface Download PDF

Info

Publication number
WO2002019407A3
WO2002019407A3 PCT/CA2001/001232 CA0101232W WO0219407A3 WO 2002019407 A3 WO2002019407 A3 WO 2002019407A3 CA 0101232 W CA0101232 W CA 0101232W WO 0219407 A3 WO0219407 A3 WO 0219407A3
Authority
WO
WIPO (PCT)
Prior art keywords
spatial distribution
chemical groups
semiconductor surface
oxidized
silicon surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CA2001/001232
Other languages
French (fr)
Other versions
WO2002019407A2 (en
Inventor
Danial D M Wayner
James T C Wojtyk
Rabah Boukherroub
Mauro Tomietto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Research Council of Canada
Original Assignee
National Research Council of Canada
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Research Council of Canada filed Critical National Research Council of Canada
Priority to AU2001287440A priority Critical patent/AU2001287440A1/en
Publication of WO2002019407A2 publication Critical patent/WO2002019407A2/en
Publication of WO2002019407A3 publication Critical patent/WO2002019407A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/48—Biological material, e.g. blood, urine; Haemocytometers
    • G01N33/50—Chemical analysis of biological material, e.g. blood, urine; Testing involving biospecific ligand binding methods; Immunological testing
    • G01N33/53—Immunoassay; Biospecific binding assay; Materials therefor
    • G01N33/543—Immunoassay; Biospecific binding assay; Materials therefor with an insoluble carrier for immobilising immunochemicals
    • G01N33/54353—Immunoassay; Biospecific binding assay; Materials therefor with an insoluble carrier for immobilising immunochemicals with ligand attached to the carrier via a chemical coupling agent
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/48—Biological material, e.g. blood, urine; Haemocytometers
    • G01N33/50—Chemical analysis of biological material, e.g. blood, urine; Testing involving biospecific ligand binding methods; Immunological testing
    • G01N33/53—Immunoassay; Biospecific binding assay; Materials therefor
    • G01N33/543—Immunoassay; Biospecific binding assay; Materials therefor with an insoluble carrier for immobilising immunochemicals
    • G01N33/551—Immunoassay; Biospecific binding assay; Materials therefor with an insoluble carrier for immobilising immunochemicals the carrier being inorganic
    • G01N33/553—Metal or metal coated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Immunology (AREA)
  • Urology & Nephrology (AREA)
  • Molecular Biology (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Hematology (AREA)
  • Biomedical Technology (AREA)
  • Microbiology (AREA)
  • Biochemistry (AREA)
  • Biotechnology (AREA)
  • Cell Biology (AREA)
  • Pathology (AREA)
  • General Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Nanotechnology (AREA)
  • Food Science & Technology (AREA)
  • Medicinal Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Silicon Compounds (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

The present invention provides an improved method for the patterning of silicon surfaces. The methods encompass the use of photoinitiation to deliberately oxide specific regions of a silicon surface, followed by differential modification of the oxidized and non-oxidized portions. In this way, the moieties can be arranged on a silicon surface with accurate spatial organization.
PCT/CA2001/001232 2000-08-30 2001-08-30 A method for spatial distribution of chemical groups on a semiconductor surface Ceased WO2002019407A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2001287440A AU2001287440A1 (en) 2000-08-30 2001-08-30 A method for spatial distribution of chemical groups on a semiconductor surface

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US22877000P 2000-08-30 2000-08-30
US60/228,770 2000-08-30
US24492900P 2000-11-02 2000-11-02
US60/244,929 2000-11-02

Publications (2)

Publication Number Publication Date
WO2002019407A2 WO2002019407A2 (en) 2002-03-07
WO2002019407A3 true WO2002019407A3 (en) 2002-09-19

Family

ID=26922663

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CA2001/001232 Ceased WO2002019407A2 (en) 2000-08-30 2001-08-30 A method for spatial distribution of chemical groups on a semiconductor surface

Country Status (2)

Country Link
AU (1) AU2001287440A1 (en)
WO (1) WO2002019407A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4429105B2 (en) 2003-08-19 2010-03-10 キヤノン株式会社 Organic substance-immobilized structure and production method thereof, peptide and DNA
US20060057026A1 (en) * 2004-09-14 2006-03-16 Boiadjiev Vassil I Gold thiolate and photochemically functionalized microcantilevers using molecular recognition agents
EP2183595B1 (en) 2007-08-01 2016-04-20 Surfix BV Protein repelling silicon and germanium surfaces

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5429708A (en) * 1993-12-22 1995-07-04 The Board Of Trustees Of The Leland Stanford Junior University Molecular layers covalently bonded to silicon surfaces
EP0783176A2 (en) * 1996-01-05 1997-07-09 Motorola, Inc. Improved masking methods during semiconductor device fabrication
US6017696A (en) * 1993-11-01 2000-01-25 Nanogen, Inc. Methods for electronic stringency control for molecular biological analysis and diagnostics

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6017696A (en) * 1993-11-01 2000-01-25 Nanogen, Inc. Methods for electronic stringency control for molecular biological analysis and diagnostics
US5429708A (en) * 1993-12-22 1995-07-04 The Board Of Trustees Of The Leland Stanford Junior University Molecular layers covalently bonded to silicon surfaces
EP0783176A2 (en) * 1996-01-05 1997-07-09 Motorola, Inc. Improved masking methods during semiconductor device fabrication

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JIANG H-B ET AL: "FAST SUB-MICROMETER INTERFERENCE LITHOGRAPHY ON SILICON", APPLIED PHYSICS B: LASERS AND OPTICS, SPRINGER INTERNATIONAL, BERLIN, DE, vol. B66, no. 4, 1 April 1998 (1998-04-01), pages 523 - 525, XP000754356, ISSN: 0946-2171 *

Also Published As

Publication number Publication date
AU2001287440A1 (en) 2002-03-13
WO2002019407A2 (en) 2002-03-07

Similar Documents

Publication Publication Date Title
MXPA02011663A (en) Substrate with a reduced light-scattering, ultraphobic surface and a method for the production of the same.
WO2003021635A3 (en) Passivated nanoparticles, method of fabrication thereof, and devices incorporating nanoparticles
ATE487991T1 (en) SAFETY DEVICE WITH MULTIPLE SAFETY MARKS
WO2002017387A3 (en) Conductive material patterning methods
WO2002048701A3 (en) Nanosensors
DE69941449D1 (en) SENSOR WITH MICRO-MADE OPENINGS
EP0735600A3 (en) Lateral hall element
NZ548643A (en) Adjustable gripping tool
EP1022771A3 (en) Improved contact and deep trench patterning
WO2002045179A1 (en) Light-emitting device and its manufacturing method and visible-light-emitting device
AU2002351820A1 (en) Assay based on doped nanoparticles
AU2002229082A1 (en) Non-contact fluid transfer methods, apparatus and uses thereof
WO2004077258A3 (en) System and method for structuring distributed applications
TW200707632A (en) Semiconductor device and forming method thereof
WO2004018333A8 (en) Conveying device and method for conveying a workpiece from a first to a second conveying level
WO2005034207A3 (en) Varying carrier mobility on finfet active surfaces to achieve overall design goals
WO2003019643A1 (en) Semiconductor device having high-permittivity insulation film and production method therefor
GB2393851B (en) Integrated circuits protected against reverse engineering and method for fabricating the same using an apparent metal contact line terminating on field oxide
TW331017B (en) Manufacturing and checking method of semiconductor substrate
AU2002349757A1 (en) Method for forming thin film, substrate having thin film formed by the method, and photoelectric conversion device using the substrate
DE50104587D1 (en) Device for returning workpieces machined in a machining arrangement
WO2002019407A3 (en) A method for spatial distribution of chemical groups on a semiconductor surface
AU2001287065A1 (en) Modified carbon, silicon and germanium surfaces
WO2004100224A3 (en) Pin photodetector
WO2005067355A3 (en) Patterned circuits and method for making same

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ PH PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG US UZ VN YU ZA ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
AK Designated states

Kind code of ref document: A3

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ PH PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG US UZ VN YU ZA ZW

AL Designated countries for regional patents

Kind code of ref document: A3

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

REG Reference to national code

Ref country code: DE

Ref legal event code: 8642

122 Ep: pct application non-entry in european phase
NENP Non-entry into the national phase

Ref country code: JP