[go: up one dir, main page]

WO2002015650A3 - Externally excited torroidal plasma source - Google Patents

Externally excited torroidal plasma source Download PDF

Info

Publication number
WO2002015650A3
WO2002015650A3 PCT/US2001/025505 US0125505W WO0215650A3 WO 2002015650 A3 WO2002015650 A3 WO 2002015650A3 US 0125505 W US0125505 W US 0125505W WO 0215650 A3 WO0215650 A3 WO 0215650A3
Authority
WO
WIPO (PCT)
Prior art keywords
enclosure
openings
coupled
plasma source
torroidal path
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2001/025505
Other languages
French (fr)
Other versions
WO2002015650A2 (en
Inventor
Hiroji Hanawa
Yan Ye
Kenneth S Collins
Kartik Ramaswamy
Andrew Nguyen
Tsutomu Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/636,699 external-priority patent/US6348126B1/en
Priority claimed from US09/638,075 external-priority patent/US7094316B1/en
Priority claimed from US09/636,435 external-priority patent/US6494986B1/en
Priority claimed from US09/637,174 external-priority patent/US6551446B1/en
Priority claimed from US09/636,700 external-priority patent/US6453842B1/en
Priority claimed from US09/636,434 external-priority patent/US6468388B1/en
Priority claimed from US09/636,436 external-priority patent/US6410449B1/en
Priority to KR1020037002020A priority Critical patent/KR100809889B1/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to JP2002519385A priority patent/JP5204941B2/en
Priority to EP01964028A priority patent/EP1307896A2/en
Publication of WO2002015650A2 publication Critical patent/WO2002015650A2/en
Publication of WO2002015650A3 publication Critical patent/WO2002015650A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

A plasma reactor for processing a workpiece, including an enclosure defining a vacuum chamber, a workpiece support within the enclosure facing an overlying portion of the enclosure, the enclosure having at least first and second openings therethrough near generally opposite sides of the workpiece support. At least one hollow conduit is connected to the first and second openings. A closed torroidal path is provided through the conduit and extending between the first and second openings across the wafer surface. A process gas supply is coupled to the interior of the chamber for supplying process gas to the torroidal path. A coil antenna is coupled to an RF power source and inductively coupled to the interior of the hollow conduit and capable of maintaining a plasma in the torroidal path.
PCT/US2001/025505 2000-08-11 2001-08-13 Externally excited torroidal plasma source Ceased WO2002015650A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020037002020A KR100809889B1 (en) 2000-08-11 2001-08-13 Plasma chamber with externally excited toroidal plasma source
EP01964028A EP1307896A2 (en) 2000-08-11 2001-08-13 Externally excited torroidal plasma source
JP2002519385A JP5204941B2 (en) 2000-08-11 2001-08-13 Toroidal plasma chamber excited from outside

Applications Claiming Priority (14)

Application Number Priority Date Filing Date Title
US09/636,434 US6468388B1 (en) 2000-08-11 2000-08-11 Reactor chamber for an externally excited torroidal plasma source with a gas distribution plate
US09/638,075 2000-08-11
US09/636,436 2000-08-11
US09/637,174 2000-08-11
US09/638,075 US7094316B1 (en) 2000-08-11 2000-08-11 Externally excited torroidal plasma source
US09/636,699 2000-08-11
US09/636,700 US6453842B1 (en) 2000-08-11 2000-08-11 Externally excited torroidal plasma source using a gas distribution plate
US09/636,699 US6348126B1 (en) 2000-08-11 2000-08-11 Externally excited torroidal plasma source
US09/636,435 2000-08-11
US09/636,434 2000-08-11
US09/636,700 2000-08-11
US09/636,436 US6410449B1 (en) 2000-08-11 2000-08-11 Method of processing a workpiece using an externally excited torroidal plasma source
US09/637,174 US6551446B1 (en) 2000-08-11 2000-08-11 Externally excited torroidal plasma source with a gas distribution plate
US09/636,435 US6494986B1 (en) 2000-08-11 2000-08-11 Externally excited multiple torroidal plasma source

Publications (2)

Publication Number Publication Date
WO2002015650A2 WO2002015650A2 (en) 2002-02-21
WO2002015650A3 true WO2002015650A3 (en) 2002-06-20

Family

ID=27569863

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/025505 Ceased WO2002015650A2 (en) 2000-08-11 2001-08-13 Externally excited torroidal plasma source

Country Status (4)

Country Link
EP (1) EP1307896A2 (en)
JP (1) JP5204941B2 (en)
KR (1) KR100809889B1 (en)
WO (1) WO2002015650A2 (en)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6939434B2 (en) * 2000-08-11 2005-09-06 Applied Materials, Inc. Externally excited torroidal plasma source with magnetic control of ion distribution
US7223676B2 (en) * 2002-06-05 2007-05-29 Applied Materials, Inc. Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer
US7430984B2 (en) 2000-08-11 2008-10-07 Applied Materials, Inc. Method to drive spatially separate resonant structure with spatially distinct plasma secondaries using a single generator and switching elements
KR100542740B1 (en) * 2002-11-11 2006-01-11 삼성전자주식회사 Method and apparatus for generating gas plasma, gas composition for plasma generation and method for manufacturing semiconductor device using same
JP4657620B2 (en) 2004-04-13 2011-03-23 株式会社日立ハイテクノロジーズ Plasma processing equipment
WO2006099438A1 (en) * 2005-03-15 2006-09-21 Varian Semiconductor Equipment Associates, Inc. Profile adjustment in plasma ion implantation
FR2886051B1 (en) * 2005-05-20 2007-08-10 Commissariat Energie Atomique METHOD FOR DETACHING THIN FILM
ATE543199T1 (en) * 2005-05-23 2012-02-15 New Power Plasma Co Ltd PLASMA CHAMBER WITH DISCHARGE INDUCING BRIDGE
JP5257917B2 (en) * 2006-04-24 2013-08-07 株式会社ニューパワープラズマ Inductively coupled plasma reactor with multiple magnetic cores
US7732309B2 (en) * 2006-12-08 2010-06-08 Applied Materials, Inc. Plasma immersed ion implantation process
US7871828B2 (en) * 2007-02-06 2011-01-18 Applied Materials, Inc. In-situ dose monitoring using optical emission spectroscopy
RU2007105087A (en) * 2007-02-12 2008-08-20 Борис Федорович Полторацкий (RU) PLASMA ENERGY CONVERTER AND ELECTROMAGNETIC VORTEX REACTOR FOR ITS IMPLEMENTATION
US7989329B2 (en) * 2007-12-21 2011-08-02 Applied Materials, Inc. Removal of surface dopants from a substrate
US7968439B2 (en) * 2008-02-06 2011-06-28 Applied Materials, Inc. Plasma immersion ion implantation method using a pure or nearly pure silicon seasoning layer on the chamber interior surfaces
US7713757B2 (en) * 2008-03-14 2010-05-11 Applied Materials, Inc. Method for measuring dopant concentration during plasma ion implantation
US8742665B2 (en) * 2009-11-18 2014-06-03 Applied Materials, Inc. Plasma source design
JP2011040786A (en) * 2010-10-25 2011-02-24 Hitachi High-Technologies Corp Plasma treatment apparatus
KR101241049B1 (en) * 2011-08-01 2013-03-15 주식회사 플라즈마트 Plasma generation apparatus and plasma generation method
SG11201506564RA (en) * 2013-03-15 2015-09-29 Plasmability Llc Toroidal plasma processing apparatus
JP2015215942A (en) * 2014-05-07 2015-12-03 国立大学法人金沢大学 Plasma generating apparatus and plasma generating method
TWI670749B (en) * 2015-03-13 2019-09-01 美商應用材料股份有限公司 Plasma source coupled to a process chamber
US10443150B2 (en) 2015-05-21 2019-10-15 Plasmability, Llc Toroidal plasma processing apparatus with a shaped workpiece holder
JP2022007611A (en) * 2020-06-26 2022-01-13 東京エレクトロン株式会社 Device for forming plasma, device for processing substrate, and method for forming plasma
JP7770685B2 (en) * 2022-07-05 2025-11-17 国立大学法人金沢大学 Plasma generating device and plasma processing method
US12284747B2 (en) 2023-03-07 2025-04-22 Finesse Technology Co., Ltd. Hollow cathode discharge assistant transformer coupled plasma source and operation method of the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4431898A (en) * 1981-09-01 1984-02-14 The Perkin-Elmer Corporation Inductively coupled discharge for plasma etching and resist stripping
EP0546852A1 (en) * 1991-12-13 1993-06-16 Hughes Aircraft Company Methods and apparatus for generating a plasma for "downstream" rapid shaping of surfaces of substrates and films
US5542559A (en) * 1993-02-16 1996-08-06 Tokyo Electron Kabushiki Kaisha Plasma treatment apparatus
WO1999000823A1 (en) * 1997-06-26 1999-01-07 Applied Science And Technology, Inc. Toroidal low-field reactive gas source

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11135297A (en) * 1997-10-31 1999-05-21 Kumagai Hiromi Plasma generator
KR20020029743A (en) * 1999-08-06 2002-04-19 로버트 엠. 포터 Inductively coupled ring-plasma source apparatus for processing gases and materials and method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4431898A (en) * 1981-09-01 1984-02-14 The Perkin-Elmer Corporation Inductively coupled discharge for plasma etching and resist stripping
EP0546852A1 (en) * 1991-12-13 1993-06-16 Hughes Aircraft Company Methods and apparatus for generating a plasma for "downstream" rapid shaping of surfaces of substrates and films
US5542559A (en) * 1993-02-16 1996-08-06 Tokyo Electron Kabushiki Kaisha Plasma treatment apparatus
WO1999000823A1 (en) * 1997-06-26 1999-01-07 Applied Science And Technology, Inc. Toroidal low-field reactive gas source

Also Published As

Publication number Publication date
WO2002015650A2 (en) 2002-02-21
KR20030029130A (en) 2003-04-11
EP1307896A2 (en) 2003-05-07
KR100809889B1 (en) 2008-03-06
JP2004506339A (en) 2004-02-26
JP5204941B2 (en) 2013-06-05

Similar Documents

Publication Publication Date Title
WO2002015650A3 (en) Externally excited torroidal plasma source
TW279240B (en) Parallel-plate icp source/rf bias electrode head
TW329018B (en) RF plasma reactor plasma
WO2002033729A3 (en) Plasma reactor with reduced reaction chamber
US5451259A (en) ECR plasma source for remote processing
US5198725A (en) Method of producing flat ecr layer in microwave plasma device and apparatus therefor
AU1240692A (en) Cluster tool soft etch module and ecr plasma generator therefor
TW344936B (en) Plasma apparatus
TW326617B (en) Plasma generator and surface treatment apparatus using this plasma generator
WO2004027825A3 (en) Beam plasma source
WO2003015123A3 (en) Dual frequency plasma etch reactor with independent plasma density/chemistry and ion energy control
TW335517B (en) Apparatus and method for processing plasma
TW200632980A (en) Plasma generation apparatus
WO2003010809A1 (en) Plasma treating device and substrate mounting table
EP1804274A3 (en) Plasma processing apparatus
KR960030338A (en) Plasma processing apparatus
US6770165B2 (en) Apparatus for plasma treatment
TW360913B (en) Plasma source for HDP-CVD chamber
US20110088848A1 (en) Microwave plasma-treating apparatus
WO2004023510A3 (en) Capacitively coupled plasma reactor with uniform radial distribution of plasma
PL345159A1 (en) Semiconductor process chamber electrode and method for making the same
KR102377280B1 (en) Dovetail groove machining method and substrate treatment apparatus
EP1134774A3 (en) Plasma processing apparatus
EP0402867A3 (en) Apparatus for microwave processing in a magnetic field
US7575987B2 (en) Method of plasma doping

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): JP KR SG

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR

121 Ep: the epo has been informed by wipo that ep was designated in this application
AK Designated states

Kind code of ref document: A3

Designated state(s): JP KR SG

AL Designated countries for regional patents

Kind code of ref document: A3

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR

DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
WWE Wipo information: entry into national phase

Ref document number: 1020037002020

Country of ref document: KR

WWE Wipo information: entry into national phase

Ref document number: 2002519385

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 2001964028

Country of ref document: EP

WWP Wipo information: published in national office

Ref document number: 1020037002020

Country of ref document: KR

WWP Wipo information: published in national office

Ref document number: 2001964028

Country of ref document: EP