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WO2002014565A1 - Ferromagnetic shape-memory alloy - Google Patents

Ferromagnetic shape-memory alloy Download PDF

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Publication number
WO2002014565A1
WO2002014565A1 PCT/JP2001/006864 JP0106864W WO0214565A1 WO 2002014565 A1 WO2002014565 A1 WO 2002014565A1 JP 0106864 W JP0106864 W JP 0106864W WO 0214565 A1 WO0214565 A1 WO 0214565A1
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Prior art keywords
phase
atomic
shape memory
memory alloy
content
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PCT/JP2001/006864
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French (fr)
Japanese (ja)
Inventor
Kiyohito Ishida
Katsunari Oikawa
Ryosuke Kainuma
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National Institute of Advanced Industrial Science and Technology AIST
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National Institute of Advanced Industrial Science and Technology AIST
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Priority claimed from JP2000290220A external-priority patent/JP3425935B2/en
Priority claimed from JP2001118315A external-priority patent/JP2002317235A/en
Application filed by National Institute of Advanced Industrial Science and Technology AIST filed Critical National Institute of Advanced Industrial Science and Technology AIST
Publication of WO2002014565A1 publication Critical patent/WO2002014565A1/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H01F1/01Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
    • H01F1/03Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity
    • H01F1/0302Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity characterised by unspecified or heterogeneous hardness or specially adapted for magnetic hardness transitions
    • H01F1/0306Metals or alloys, e.g. LAVES phase alloys of the MgCu2-type
    • H01F1/0308Metals or alloys, e.g. LAVES phase alloys of the MgCu2-type with magnetic shape memory [MSM], i.e. with lattice transformations driven by a magnetic field, e.g. Heusler alloys
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C30/00Alloys containing less than 50% by weight of each constituent

Definitions

  • the present invention relates to a ferromagnetic shape memory alloy having excellent ductility, having ferromagnetism, and causing martensite transformation.
  • Actuator materials include piezoelectric materials, magnetostrictive materials, electrorheological fluids, and shape memory alloys. In all of the materials, the function of the actuator is manifested by a phase transformation phenomenon of the crystal structure, which involves the conversion of physicochemical properties and mechanical energy.
  • shape memory alloys utilize a martensitic transformation by cooling and a reverse transformation mechanism by heating.
  • the shape is constrained in the alloy by constraining the shape in the austenite state, which is the high-temperature phase, and the alloy is memorized by heat treatment. After being transformed in the martensite state, which is the low-temperature phase, the reverse transformation that returns to austenite when heated And return to the original shape.
  • the transformation temperature during heating is higher than the transformation temperature during cooling, and the temperature difference is called temperature hysteresis.
  • the case where the temperature hysteresis is small is called thermoelastic martensite transformation, and a large shape recovery strain of about 5% can be obtained.
  • shape memory alloys utilizing thermoelastic martensitic transformation require heating and cooling because they exhibit a shape memory effect due to temperature changes.However, the cooling process is rate-limited by heat dissipation, so shape memory The response speed of the effect is slow. Therefore, the shape memory effect is repeatedly There was a problem that it was difficult to use it every night.
  • ferromagnetic shape memory alloys have attracted attention as a new factor material. Ferromagnetic shape memory alloys are intended to enhance the response of the shape memory effect by applying magnetic energy externally, not by temperature change, to induce magnetically induced martensite transformation. Alternatively, when a magnetic field is applied in the martensitic phase, distortion occurs due to twin movement. This distortion is intended to be applied as an actuary.
  • Japanese Patent Application Laid-Open No. 11-269611 discloses an iron-based magnetic shape memory alloy and a method for producing the same.
  • This technology applies magnetic energy to iron-based magnetic shape memory alloys based on Fe-Pd-based alloys with a Pd content of 27-32 at.% Or Fe-Pt-based alloys with a Pt content of 23-30 at.
  • the purpose of the present invention is to provide a shape-memory phenomenon by imparting a magnetically induced martensitic transformation.
  • JP-A-5-311287 discloses a ferromagnetic Cu-based shape memory material and a method for producing the same.
  • a Cu—A1-Mn alloy powder is pressed, solidified, molded, sintered, and processed to use the shape memory phenomenon in an electrical switching device and a temperature sensing sensor.
  • U.S. Pat. No. 5,958,154 discloses a technique in which a magnetic field is applied to a material for an actuator of a Ni-Mn-Ga alloy to exhibit a shape memory phenomenon.
  • this technique has a problem that it is difficult to give a complicated and precise shape as a mechanical part because the ductility of the material is low, and the repetition characteristics are poor. Disclosure of the invention
  • An object of the present invention is to solve the above problems and provide a ferromagnetic shape memory alloy having excellent ductility, having ferromagnetism, and causing martensitic transformation.
  • the present invention provides a ferromagnetic material containing Co as a component and having a single-phase structure composed of a / 3 phase having a B 2 structure or a two-phase structure composed of eight phases and another phase. Shape memory alloy.
  • the present invention provides a composition comprising 5 to 70 atomic% of Co, 5 to 70 atomic% of Ni, and 5 to 50 atomic% of A1, with the balance being unavoidable impurities and a single phase comprising a B 2 structure ⁇ phase.
  • It is a ferromagnetic shape memory alloy having a phase structure or a two-phase structure composed of 7 phases and a ⁇ phase having a B 2 structure.
  • the present invention provides a composition containing 35 to 65 atomic% of Co and 20 to 35 atomic% of Ga, with the balance being Ni and unavoidable impurities, and a single-phase structure or a B 2 structure composed of a ⁇ phase having a B 2 structure.
  • This is a ferromagnetic shape memory alloy having a three-phase structure and a two-phase structure composed of a second phase having a cccc structure.
  • the present invention in addition to the above-mentioned composition, it is preferable to contain 0.001 to 30 atomic% of Fe and / or 0.001 to 30 atomic% of Mn.
  • one of Ga, In, and Si is contained in an amount of 0.001 to 50 atomic%, or a total of two or more of them is contained in an amount of 0.001 to 50 atomic%.
  • one of In and Si is contained at 0.001 to 50 atomic%, or two of them are contained at 0.001 to 50 atomic% in total.
  • B is 0.0005 to 0.01 atomic%
  • Mg is 0.0005 to 0.01 atomic%
  • C is 0.0005 to 0.01 atomic%
  • 0.0005 is 0.0005 atomic%. It is preferable to contain one or more of 0.01 to 0.01 atomic%.
  • one of Pt, Pd, Au, Ag, Nb, V, Ti, Cr, Zr, Cu, W, and Mo is 0.001 to 10 atomic% or two or more. The total content is preferably 0.001 to 10 atomic%.
  • the present invention has a single-phase structure, as a preferred embodiment, it is preferable that the ⁇ phase having the B2 structure is a single crystal.
  • the volume fraction of the seven phases is 0.0 :! It is preferable to satisfy the range of ⁇ 80% by volume.
  • the second phase of the above-described fee structure, epsilon of ⁇ phase and / or L 1 2 structure 7 'phase contact and Z or hcp structure of A 1 structures - is preferably C 0 phase, the I cc It is preferable that the volume fraction of the second phase of the structure satisfies the range of 0.01 to 80% by volume.
  • FIG. 1 is a perspective view showing the orientation of the test piece and the direction of the magnetic field.
  • the present invention is a ferromagnetic shape memory alloy containing Co as a component and having a single-phase structure composed of a B 2 structure ⁇ phase or a two-phase structure composed of an S phase and another phase.
  • the ferromagnetic shape memory alloy of the present invention contains 5 to 70 atomic% of Co, 5 to 70 atomic% of Ni, and 5 to 50 atomic% of A1, with the balance being unavoidable impurities.
  • Fe is 0.0101-30 atomic%
  • Mn is 0.001-30 atomic%
  • Ga is 0.001-50 atomic%
  • In is 0.001-50 atomic%
  • Si is 0.001-50 atomic%
  • B is 0.0005-0.01 atomic%
  • one of Pt, Pd, Au, Ag, Nb, V, Ti, Cr, Zr, Cu, W and Mo is 0.001 to: L0 atomic% or a total of two or more is 0.00 :! ⁇ 10 atomic% is preferred New
  • Co is an element that improves shape memory characteristics and magnetic characteristics together with Ni and Al. However, if the Co content is less than 5 atomic%, the ferromagnetism disappears. If the Co content exceeds 70 atomic%, no shape memory effect is exhibited. Therefore, the Co content needs to satisfy the range of 5 to 70 atomic%.
  • Ni is an element that improves shape memory characteristics together with Co and A1. However, when the Ni content is less than 5 atomic% or the Ni content exceeds 70 atomic%, the shape memory effect is not exhibited. Therefore, the Ni content must satisfy the range of 5 to 70 atomic%.
  • A1 is an element that improves shape memory characteristics and magnetic characteristics together with Co and Ni. However, when the A1 content is less than 5 atomic% or the A1 content exceeds 50 atomic%, the shape memory effect is not exhibited. Thus, A1 content Ru required force s 3 ⁇ 4 satisfying the range of 5 to 50 atomic%>.
  • Fe is an element that expands the region where the / 2 phase of the B 2 structure (the so-called CeCl structure) exists, and the temperature at which the base structure mainly composed of the ⁇ phase of the B 2 structure causes martensitic transformation (hereinafter, martensitic transformation). It is an element that changes the temperature at which the magnetic properties change from paramagnetic to ferromagnetic (hereinafter referred to as the Curie temperature).
  • the Fe content is less than 0.001 at%, the effect of expanding the region where the three phases of the B 2 structure exist cannot be exhibited.
  • the Fe content exceeds 30 atomic%, the effect of expanding the existence region of the / 3 phase of the B 2 structure is saturated. Therefore, the Fe content preferably satisfies the range of 0.001 to 30 atomic%.
  • Mn is an element that promotes the formation of the / 3 phase of the B 2 structure and an element that changes the martensitic transformation temperature and the Curie temperature. However, if the Mn content is less than 0.001 atomic%, the effect of expanding the region where the / 3 phase of the B2 structure is present is not exhibited. Further, c thus the Mn content is effective to widen the existing area of more than 30 atomic% B 2 structure / 3-phase saturated, Mn content is preferably within the ranges of 0.001 to 30 atomic% .
  • Ga is an element that changes the martensite transformation temperature and the Curie temperature.
  • the synergistic effect of In and Si reduces the martensite transformation temperature and the curry temperature within the range of -200 to 200 ° C. Can be controlled freely.
  • the Ga content is less than 0.001 atomic%, the effects of controlling the martensite transformation temperature and the Curie temperature are not exhibited. Further, even if the Ga content exceeds 50 atomic%, the effects of controlling the martensite transformation temperature and the Curie temperature are not exhibited. Therefore, the Ga content preferably satisfies the range of 0.001 to 50 atomic%.
  • the In content is less than 0.001 atomic%, the effects of controlling the martensitic transformation temperature and the Curie temperature are not exhibited. Further, even if the In content exceeds 50 atomic%, the effect of controlling the martensite transformation temperature and the Curie temperature is not exhibited. Therefore, the In content preferably satisfies the range of 0.001 to 50 atomic%.
  • Si is an element that changes the martensite transformation temperature and the Curie temperature.
  • the synergistic effect of Ga and In allows the martensite transformation temperature and the Curie temperature to be adjusted within the range of 200 to 200 ° C. Can be controlled.
  • the Si content is less than 0.001 atomic%, the effects of controlling the martensitic transformation temperature and the Curie temperature are not exhibited. Further, even if the Si content exceeds 50 atomic%, the control effects of the martensite transformation temperature and the Curie temperature are not exhibited. Therefore, the Si content preferably satisfies the range of 0.001 to 50 atomic%.
  • B is an element that refines the structure and improves the ductility and shape memory properties of the material.
  • the B content is less than 0.0005 atomic%, the effects of making the structure finer and improving the ductility of the material are not exhibited.
  • the B content exceeds 0.01 atomic%, the effect of miniaturization and improvement of ductility saturates. Therefore, the B content is 0.00 It is preferable to satisfy the range of 05 to 01 atomic%.
  • Mg is an element that refines the structure and improves the ductility and shape memory properties of the material.
  • the Mg content is less than 0.0005 atomic%, the effects of making the structure finer and improving the ductility are not exhibited. If the Mg content exceeds 0.01 atomic%, the effects of miniaturization and improvement of ductility are saturated. Therefore, the Mg content preferably satisfies the range of 0.0005 to 0.01 atomic%.
  • C is an element that refines the structure and improves the ductility and shape memory properties of the material.
  • the C content is less than 0.0005 atomic%, the effects of miniaturizing the structure and improving the ductility of the material are not exhibited. If the C content exceeds 0.01 atomic%, the effects of miniaturization and improvement of ductility are saturated. Therefore, the C content preferably satisfies the range of 0.0005 to 0.01 atomic%.
  • P is an element that refines the structure and improves the ductility and shape memory properties of the material.
  • the P content is less than 0.0005 atomic%, the effects of miniaturizing the structure and improving the ductility of the material are not exhibited. If the P content exceeds 0.01 atomic%, the effects of miniaturization and improvement of ductility are saturated. Therefore, the P content preferably satisfies the range of 0.0005 to 0.01 atomic%.
  • All of Pt, Pd, Au, Ag, Nb, V, Ti, Cr, Zr, Cu, W and Mo not only change the martensitic transformation temperature and Curie temperature, but also refine the structure and improve the ductility of the material. It is an element to improve. However, if these elements are less than 0.001 at%, the effects of making the structure finer and improving the ductility of the material are not exhibited. If these elements exceed 10 atomic%, the effect of miniaturization and improvement of ductility saturates.
  • the ferromagnetic shape memory alloy of the present invention has a force having a single phase structure composed of a ⁇ phase of B 2 structure (so-called CeCl structure), or a two phase structure composed of 7 phases of ⁇ cc structure and ⁇ phase of ⁇ 2 structure. Having.
  • a single phase structure When it has a single phase structure, it may be a single crystal or a polycrystal. However, single crystals are preferred because of their excellent shape memory properties and magnetic properties.
  • a method for obtaining a single crystal is not limited to a specific method, and a conventionally known method such as a Chiyoklarski method may be used.
  • the two-phase structure is more preferable because the ductility, shape memory properties and magnetic properties are remarkably improved as compared with the single-phase structure.
  • the volume fraction of the seven phases is less than 0.01% by volume, the effect of improving shape memory characteristics and magnetic characteristics is not exhibited.
  • the volume fraction of the y-phase exceeds 80% by volume, the effect of improving shape memory properties and magnetic properties is saturated. Therefore, the volume fraction of the y phase preferably satisfies the range of 0.01 to 80% by volume.
  • the molten metal is solidified, heat-treated at 500 to L400 6 C, and then quenched. In this way, a two-phase structure of a phase and a seven phase is obtained, and then, when processed into a predetermined shape, excellent ductility is exhibited.
  • the sheet material After quenching, the sheet material is further subjected to cold rolling or hot rolling to form a sheet material, processed into a predetermined shape, and subjected to a recrystallization heat treatment at 500 to 1400 ° C., thereby imparting a shape memory function to B 2.
  • a ferromagnetic shape memory alloy with a single-phase structure consisting of the ⁇ phase is obtained.
  • This single-phase ferromagnetic shape memory alloy is further heat-treated at 500 to 1400 ° C to preferentially precipitate seven phases at the / 3 phase grain boundary, thereby providing B2 with a shape memory function.
  • a ferromagnetic shape memory alloy with a two-phase structure consisting of a ⁇ phase with a structure and seven phases with a ⁇ cc structure with excellent ductility is obtained.
  • the ferromagnetic shape memory alloy of the present invention contains 35 Co65 atomic% of Co and 20-35 atomic% of Ga, with the balance being Ni and unavoidable impurities. Furthermore, 0.001 to 30 atomic% of Fe, 0.001 to 30 atomic% of Mn, 0.001 to 50 atomic% of In, 0.001 to 50 atomic% of Si, and 0.0005 to 0.01 of B Atomic%, 0.0005 to 0.01 atomic% of Mg, 0.0005 to 0.01 atomic of C, and 0.0005 to 0.01 atomic% of P are preferable.
  • one of Pt, Pd, Au, Ag, Nb, V, Ti, Cr, Zr, Cu, W and Mo is 0.001 ⁇ ; L0 atomic% or two or more is 0.001 ⁇ 10 It is preferable to contain the atom%.
  • Co is an element that improves shape memory characteristics and magnetic characteristics together with Ni. However, if the Co content is less than 35 atomic%, the ferromagnetism disappears. If the Co content exceeds 65 atomic%, no shape memory effect is exhibited. Therefore, the Co content must satisfy the range of 35 to 65 atomic%.
  • Ga is an element that changes the martensite transformation temperature and the Curie temperature, and can freely control the martensite transformation temperature and the Curie temperature in the range of -200 to 200 ° C. However, if the Ga content is less than 20 atomic%, the effects of controlling the martensite transformation temperature and the Curie temperature are not exhibited. Further, even if the Ga content exceeds 35 atomic%, the effects of controlling the martensite transformation temperature and the Curie temperature are not exhibited. Therefore, the Ga content must satisfy the range of 20 to 35 atomic%.
  • Fe is an element that expands the existence region of the / 3 phase of the B 2 structure (so-called CeCl structure). It is an element that changes the temperature at which the magnetic properties change from paramagnetic to ferromagnetic (hereinafter referred to as the Curie temperature).
  • the Curie temperature changes the temperature at which the magnetic properties change from paramagnetic to ferromagnetic.
  • the Fe content is less than 0.001 atomic%, the effect of expanding the region where the B 2 structure phase exists is exhibited. Absent.
  • the Fe content exceeds 30 atomic%, the effect of expanding the region where the ⁇ phase having the B 2 structure exists is saturated. Therefore, the Fe content preferably satisfies the range of 0.001 to 30 atomic%.
  • Mn is an element that promotes the formation of the / 3 phase of the B 2 structure and an element that changes the martensite transformation temperature and the Curie temperature.
  • Mn content is less than 0.001 atomic%, the effect of expanding the region where the / 3 phase of the B2 structure is present is not exhibited.
  • the In is an element that changes the martensite transformation temperature and the Curie temperature together with Si, and the synergistic effect with Si can freely control the martensite transformation temperature and the Curie temperature in the range of -200 to 200 ° C.
  • the In content is less than 0.001 atomic%, the effects of controlling the martensite transformation temperature and the Curie temperature are not exhibited. Further, even if the In content exceeds 50 atomic%, the effect of controlling the martensitic transformation temperature and the Curie temperature is not exhibited. Therefore, the In content preferably satisfies the range of 0.001 to 50 atomic%.
  • Si is an element that changes the martensite transformation temperature and Curie temperature, and the synergistic effect with In allows the martensite transformation temperature and Curie temperature to be freely controlled in the range of -200 to 200 ° C.
  • the Si content is less than 0.001 atomic%, the control effects of the martensite transformation temperature and the Curie temperature are not exhibited. Further, even if the Si content exceeds 50 atomic%, the effect of controlling the martensitic transformation temperature and the Curie temperature is not exhibited. Therefore, the Si content preferably satisfies the range of 0.001 to 50 atomic%.
  • B is an element that refines the structure and improves the ductility and shape memory properties of the material.
  • the B content is 0.01 atomic%. If it exceeds, the effects of miniaturization and improvement of ductility are saturated. Therefore, the B content preferably satisfies the range of 0.0005 to 0.01 atomic%.
  • Mg is an element that refines the structure and improves the ductility and shape memory properties of the material. However, if the content is less than 0.0005 atomic%, the effect of making the structure finer and improving the ductility is not exhibited. If the Mg content exceeds 0.01 atomic%, the effects of miniaturization and improvement of ductility are saturated. Therefore, the Mg content preferably satisfies the range of 0.0005 to 0.01 atomic%.
  • C is an element that refines the structure and improves the ductility and shape memory properties of the material.
  • the C content is less than 0.0005 atomic%, the effects of miniaturizing the structure and improving the ductility of the material are not exhibited. If the C content exceeds 0.01 atomic%, the effects of miniaturization and improvement of ductility are saturated. Therefore, the C content preferably satisfies the range of 0.0005 to 0.01 atomic%.
  • P is an element that refines the structure and improves the ductility and shape memory properties of the material.
  • the P content is less than 0.0005 atomic%, the effects of miniaturizing the structure and improving the ductility of the material are not exhibited. If the P content exceeds 0.01 atomic%, the effects of miniaturization and improvement of ductility are saturated. Therefore, the P content preferably satisfies the range of 0.0005 to 0.01 atomic%.
  • All of Pt, Pd, Au, Ag, Nb, V, Ti, Cr, Zr, Cu, W and Mo not only change the martensite transformation temperature and Curie temperature, but also refine the structure and ductility of the material. Is an element that improves the However, if these elements are less than 0.001 at%, the effects of making the structure finer and improving the ductility of the material are not exhibited. If these elements exceed 10 atomic%, the effect of miniaturization and improvement of ductility saturates. Therefore, when one of these elements is added, the content satisfies the range of 0.001 to 10 atomic%, and when two or more of these elements are added, the total content is 0.001 to: It is preferable to satisfy the range of L0 atomic%.
  • the ferromagnetic shape memory alloy of the present invention has a single phase structure composed of a ⁇ phase having a B 2 structure (so-called CeCl structure) or a two phase structure composed of a ⁇ phase having a ⁇ 2 structure and a second phase having an fcc structure. Having.
  • a single phase structure When it has a single phase structure, it may be a single crystal or a polycrystal. However, single crystals are preferred because of their excellent shape memory properties and magnetic properties.
  • a method for obtaining a single crystal is not limited to a specific method, and a conventionally known method such as a Chiyoklarski method may be used.
  • the two-phase structure is more preferable because the ductility, shape memory properties and magnetic properties are remarkably improved as compared with the single-phase structure.
  • the second phase of the dual phase structure is of A 1 structure ⁇ phase and / or L 1 2 Structure of ⁇ 'phase and or hcp structure having an fcc structure epsilon - C. It is preferably a phase.
  • the volume fraction of the second phase is less than 0.01% by volume, the effect of improving shape memory properties and magnetic properties is not exhibited.
  • the volume fraction of the second phase exceeds 80% by volume, the effect of improving shape memory properties and magnetic properties is saturated. Therefore, the volume fraction of the second phase preferably satisfies the range of 0.01 to 80% by volume.
  • the molten metal is solidified, heat-treated at 500 to 1400 ° C., and then quenched. In this way, a two-phase structure of the phase and the second phase (ie, the ⁇ phase and the Z or 7 ′ phase) is obtained, and then, when processed into a predetermined shape, it exhibits excellent ductility.
  • the sheet material After quenching, the sheet material is further subjected to cold rolling or hot rolling to form a sheet material, processed into a predetermined shape, and subjected to a recrystallization heat treatment at 500 to 1400 ° C., thereby imparting a shape memory function to B 2.
  • a ferromagnetic shape memory alloy with a single-phase structure consisting of the ⁇ phase is obtained.
  • This ferromagnetic shape memory alloy having a single phase structure is further heat-treated at 300 to 1400 ° C, and the 7 phase and / or the 7 phase and the Z or ⁇ — (:. Analysis
  • the ferromagnetic shape of a two-phase structure consisting of a B2 structure / 3 phase with shape memory function and a fee structure second phase (ie, 7 phase and / or 7 'phase) with excellent ductility A memory alloy is obtained.
  • Inventive Examples 3 and 4 show that the polycrystalline ⁇ phase was formed in the same manner as in Inventive Examples 1 and 2, and then the single crystal ⁇ phase (B 2 structure) was strengthened by strain annealing. This is an example of manufacturing a magnetic shape memory alloy.
  • Inventive Example 5 and Inventive Example 6 were obtained by forming a polycrystalline phase in the same manner as in Inventive Example 1 and Inventive Example 2, and then heat-treating at 500 to 1350 ° C to bring the yS phase grain boundary to r.
  • a phase is precipitated to produce a ferromagnetic shape memory alloy having a two-phase structure of 8 phases having a B2 structure having a shape memory function and 7 phases having a ⁇ cc structure having excellent ductility.
  • the volume fraction of the 7 phase of Invention Example 5 was 10% by volume
  • the volume fraction of the ⁇ phase of Invention Example 6 was 40% by volume.
  • Comparative Example 1 is an example in which the content of Co is out of the range of the present invention
  • Comparative Example 2 is an example in which the content of Ni is out of the range of the present invention
  • Comparative Example 3 is an example in which the content of A1 is in the range of the present invention. This is an example that is out of range.
  • a polycrystal; S phase was produced in the same manner as in Inventive Examples 1 and 2.
  • Comparative Example 2 a single-crystal phase was produced in the same manner as in Inventive Examples 3 and 4.
  • Comparative Example 3 a two-phase structure consisting of seven phases was formed in the same manner as in Inventive Examples 5 and 6. The volume fraction of the seven phases in Comparative Example 3 was 90% by volume.
  • the recovery rate (%) of the shape memory property is a value calculated by the following equation (1), and the magnetostrictive property (%) is a value calculated by the following equation (2). %) Is a value calculated by the following equation (3).
  • Magnetostrictive property (%) 100 X ⁇ (L 2 -Li) / Li ⁇ ⁇ ⁇ ⁇ (2)
  • the invention example shows that the shape memory alloy which is excellent in the recovery rate of the shape memory property, the magnetostriction property, and the cold rolling rate is better. I got it.
  • the single-phase structure of a single crystal ⁇ phase invention example By forming a two-phase structure (3, 4) or a / 3 phase and a 7-phase (Invention Examples 5 and 6), compared with a polycrystalline / 3-phase single-phase structure (Invention Examples 1 and 2), A ferromagnetic shape memory alloy with more excellent recovery rate of yield memory property, magnetostriction property and cold rolling rate was obtained.
  • Invention Example 6 which is particularly excellent in processing performance (that is, high in cold rolling ratio) and Invention Example 5 which is excellent in recovery rate of shape memory characteristics and magnetostriction characteristics
  • the type and amount of additive elements are appropriate. It is possible to obtain a ferromagnetic shape memory alloy having the performance according to the purpose and application by selecting the above.
  • Inventive Examples 9 and 10 are obtained by forming a polycrystalline / 3 phase in the same manner as in Inventive Examples 7 and 8, and then subjecting the single-crystal ⁇ phase (B 2 structure) to strain annealing. This is an example of manufacturing a ferromagnetic shape memory alloy.
  • Inventive Examples 11 and 12 are similar to Inventive Examples 7 and 8 except that a polycrystalline ⁇ phase was generated in the same manner as in Inventive Examples 7 and 8, and then heat-treated at 500 to 1350 ° C to generate a ⁇ phase crystal boundary.
  • Precipitated 7 phase and Z or 7 'phase, B2 structure / 3 phase with shape memory function and 2nd phase of ⁇ cc structure with excellent ductility (ie 7 phase and ⁇ or 7' phase) This is an example of manufacturing a two-phase ferromagnetic shape memory alloy.
  • the volume fraction of the second phase of Invention Example 11 was 10% by volume, and the volume fraction of the second phase of Invention Example 12 was 40% by volume.
  • Comparative Example 4 is an example in which the content of Co is out of the range of the present invention
  • Comparative Example 5 is an example in which the content of Ga is out of the range of the present invention.
  • a polycrystalline j8 phase was produced in the same manner as in Inventive Examples 7 and 8.
  • Comparative Example 5 was performed in the same manner as in Invention Examples 11 and 12. In this way, a two-phase structure of a third phase and a second phase was formed. The volume fraction of the second phase in Comparative Example 5 was 90% by volume.
  • a strip of 50 mm x 5 thigh x 0.3 mm was cut out and subjected to a bending test to measure the recovery rate when 2% bending strain was applied.
  • Magnetostrictive characteristics are as follows: Invention Example 9-: single crystal /? Phase: For L0 and Comparative Example 5, as shown in FIG. 1, a test piece having a size of 5 mm ⁇ 5 bandages ⁇ 5 mm was cut out, and the (1 10) plane A strain gauge 2 was attached to the sample, and a magnetic field H having a strength of 30 A / m was applied in the [001] direction to measure the amount of strain.
  • Invention Examples 11, 12 and Comparative Example 5 which have a two-phase structure of the / 3 phase and the second phase (that is, the 7 phase and / or 7 'phase), a 30 minxl0minx lmm strip-shaped specimen was used in the rolling direction. The amount of strain in the rolling direction when a magnetic field was applied in a parallel direction was measured.
  • the recovery rate (%) of the shape memory characteristic is a value calculated by the following equation (1), as in Table 2, and the magnetostrictive property (%) is a value calculated by the following equation (2).
  • the cold rolling reduction (%) is a value calculated by the following equation (3). '
  • Magnetostrictive property (%) 100 X ⁇ (L 2 -Li) / Lx ⁇ ⁇ ⁇ ⁇ ⁇ (2)
  • Example 7- Of the L2s, a single-crystal ⁇ phase single-phase structure (Inventive Examples 9 and 10) and a two-phase structure of ⁇ phase and second phase (Inventive Examples 11 and 12) make Compared with the single-phase structure of the crystalline ⁇ phase (Inventive Examples 7 and 8), a ferromagnetic shape memory alloy having more excellent shape memory recovery rate, magnetostriction property and cold rolling rate could be obtained.
  • Invention Example 12 which is particularly excellent in processing performance (that is, high in cold rolling ratio) and Invention Example 11 which is excellent in recovery rate of shape memory characteristics and magnetostriction characteristics, the type and amount of the added element are appropriate. It is possible to obtain a ferromagnetic shape memory alloy having the performance according to the purpose and application by selecting the above.
  • Shape memory characteristics ⁇ Recovery 80 % or more
  • 0.1% or more, 0.2% or less ⁇ : 0.01% or more, 0.1% or less X: less than 0.01%

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Abstract

A ferromagnetic shape-memory alloy which has a composition consisting of 5 to 70 at.% cobalt, 5 to 70 at.% nickel, 5 to 50 at.% aluminum, and unavoidable impurities as the remainder and has either a single-phase structure consisting of a ß phase of a B2 structure or a two-phase structure consisting of a η phase of an fcc structure and a ß phase of a B2 structure; or a ferromagnetic shape-memory alloy which has a composition consisting of 35 to 65 at.% cobalt, 20 to 35 at.% gallium, and nickel and unavoidable impurities as the remainder and has either a single-phase structure consisting of a ß phase of a B2 structure or a two-phase structure consisting of a ß phase of a B2 structure and an fcc structure as a second phase.

Description

明 細 書  Specification

強磁性形状記憶合金 Ferromagnetic shape memory alloy

技術分野 Technical field

本発明は、 延性に優れ、 強磁性を有し、 かつマルテンサイ ト変態を生じる強磁 性形状記憶合金に関する。  The present invention relates to a ferromagnetic shape memory alloy having excellent ductility, having ferromagnetism, and causing martensite transformation.

背景技術 Background art

機械構造物を構成する部品のうち、 変形, 移動あるいは応力を発生する機能性 部品はァクチユエ一夕一と呼ばれる。 ァクチユエ一ターの材料としては、 圧電材 料, 磁歪材料, 電気粘性流体, 形状記憶合金等がある。 いずれの材料も、 ァクチ ユエ一ターの機能は結晶構造の相変態現象を伴って発現し、 物理化学的特性値や 力学的エネルギーの変換作用が関わっている。  Among the components that make up a mechanical structure, functional components that generate deformation, movement, or stress are called factories. Actuator materials include piezoelectric materials, magnetostrictive materials, electrorheological fluids, and shape memory alloys. In all of the materials, the function of the actuator is manifested by a phase transformation phenomenon of the crystal structure, which involves the conversion of physicochemical properties and mechanical energy.

ァクチユエ一タ一用材料のうち、 形状記憶合金は、 冷却によるマルテンサイ ト 変態と、 加熱によるその逆変態機構を利用するものである。 すなわち高温相であ るオーステナイ ト状態で形状を拘束して熱処理することによつて合金に形状を記 憶させ、 低温相であるマルテンサイ ト状態で変形した後、 加熱するとオーステナ ィ 卜に戻る逆変態を生じて元の形状に戻るのである。  Among the materials used for actuators, shape memory alloys utilize a martensitic transformation by cooling and a reverse transformation mechanism by heating. In other words, the shape is constrained in the alloy by constraining the shape in the austenite state, which is the high-temperature phase, and the alloy is memorized by heat treatment. After being transformed in the martensite state, which is the low-temperature phase, the reverse transformation that returns to austenite when heated And return to the original shape.

一般に、 冷却時の変態温度よりも加熱時の変態温度の方が高く、 その温度差を 温度ヒステリシスという。 温度ヒステリシスが小さい場合を熱弾性マルテンサイ ト変態といい、 約 5 %にも及ぶ大きな形状回復歪が得られる。 しかし熱弾性マル テンサイ ト変態を利用する形状記憶合金は、 温度変化によって形状記憶効果を発 現させるのであるから加熱と冷却が必要であるが、 冷却過程は熱放散で律速され るため、 形状記憶効果の応答速度が遅い。 したがって形状記憶効果を繰り返し発 現させるァクチユエ一夕一には利用し難いという問題があった。 Generally, the transformation temperature during heating is higher than the transformation temperature during cooling, and the temperature difference is called temperature hysteresis. The case where the temperature hysteresis is small is called thermoelastic martensite transformation, and a large shape recovery strain of about 5% can be obtained. However, shape memory alloys utilizing thermoelastic martensitic transformation require heating and cooling because they exhibit a shape memory effect due to temperature changes.However, the cooling process is rate-limited by heat dissipation, so shape memory The response speed of the effect is slow. Therefore, the shape memory effect is repeatedly There was a problem that it was difficult to use it every night.

そこで近年、 新しいァクチユエ一ター用材料として強磁性形状記憶合金が注目 されている。 強磁性形状記憶合金は、 温度変化ではなく、 外的に磁気エネルギー を付加して、 磁気誘起マルテンサイ 卜変態を生じさせ、 形状記憶効果の応答性を 高めようとするものである。 あるいはマルテンサイ 卜相状態で磁場を加えると、 双晶の移動で歪みを生じる。 この歪みをァクチユエ一夕一として応用しようとす るものである。  Therefore, in recent years, ferromagnetic shape memory alloys have attracted attention as a new factor material. Ferromagnetic shape memory alloys are intended to enhance the response of the shape memory effect by applying magnetic energy externally, not by temperature change, to induce magnetically induced martensite transformation. Alternatively, when a magnetic field is applied in the martensitic phase, distortion occurs due to twin movement. This distortion is intended to be applied as an actuary.

特開平 11- 269611 号公報には、 鉄基磁性形状記憶合金およびその製造方法が開 示されている。 この技術は、 Pd含有量が 27〜32原子%の Fe— Pd系合金、 あるいは Pt含有量が 23〜30原子%の Fe - Pt系合金を基本とする鉄基磁性形状記憶合金に磁 気エネルギーを付与して磁気誘起マルテンサイ ト変態を発現させることによって、 形状記憶現象を発現させようとするものである。 しかしこの技術では、 材料の延 性が低いので機械部品として複雑かつ精密な形状を付与するのが困難であり、 し かも原料価格が高いため経済的にも不利であつた。  Japanese Patent Application Laid-Open No. 11-269611 discloses an iron-based magnetic shape memory alloy and a method for producing the same. This technology applies magnetic energy to iron-based magnetic shape memory alloys based on Fe-Pd-based alloys with a Pd content of 27-32 at.% Or Fe-Pt-based alloys with a Pt content of 23-30 at. The purpose of the present invention is to provide a shape-memory phenomenon by imparting a magnetically induced martensitic transformation. However, with this technology, it was difficult to give a complex and precise shape as a mechanical part because of the low ductility of the material, and it was economically disadvantageous because of the high raw material price.

特開平 5-311287号公報には、 強磁性 Cu系形状記憶材料とその製造方法が開示さ れている。 この技術は、 Cu— A1— Mn合金粉末体を加圧して固化成形した後、 焼結 および加工して、 形状記憶現象を電気的スィツチング装置や温度感知センサ一に 利用しょうとするものである。 しかしこの技術では、 粉末材料を加圧成形して焼 結した後、 加工するため機械部品として複雑かつ精密な形状を付与するのが困難 であった。  JP-A-5-311287 discloses a ferromagnetic Cu-based shape memory material and a method for producing the same. In this technology, a Cu—A1-Mn alloy powder is pressed, solidified, molded, sintered, and processed to use the shape memory phenomenon in an electrical switching device and a temperature sensing sensor. However, with this technology, it was difficult to impart a complex and precise shape as a mechanical part because the powder material was pressed and sintered and then processed.

米国特許 5, 958, 154号公報には、 Ni— Mn— Ga系合金のァクチユエ一タ一用材料 に磁場を付与して形状記憶現象を発現させる技術が開示されている。 しかしこの 技術では、 材料の延性が低いので機械部品として複雑かつ精密な形状を付与する のが困難であり、 しかも繰り返し特性が悪いという問題があった。 発明の開示 U.S. Pat. No. 5,958,154 discloses a technique in which a magnetic field is applied to a material for an actuator of a Ni-Mn-Ga alloy to exhibit a shape memory phenomenon. However, this technique has a problem that it is difficult to give a complicated and precise shape as a mechanical part because the ductility of the material is low, and the repetition characteristics are poor. Disclosure of the invention

本発明は上記のような問題を解消し、 延性に優れ、 強磁性を有し、 かつマルテ ンサイト変態を生じる強磁性形状記憶合金を提供することを目的とする。 この目 的を達成するための本発明は、 成分として Coを含有し、 かつ B 2構造の /3相から なる単相組織または; 8相と他の相とからなる 2相組織を有する強磁性形状記憶合 金である。  An object of the present invention is to solve the above problems and provide a ferromagnetic shape memory alloy having excellent ductility, having ferromagnetism, and causing martensitic transformation. In order to achieve this object, the present invention provides a ferromagnetic material containing Co as a component and having a single-phase structure composed of a / 3 phase having a B 2 structure or a two-phase structure composed of eight phases and another phase. Shape memory alloy.

すなわち本発明は、 Coを 5〜70原子%、 Niを 5〜70原子%、 A1を 5〜50原子% 含有し、 残部が不可避的不純物からなる組成と、 B 2構造の^相からなる単相組 織または 7相と B 2構造の β相からなる 2相組織とを有する強磁性形状記憶合金 である。  That is, the present invention provides a composition comprising 5 to 70 atomic% of Co, 5 to 70 atomic% of Ni, and 5 to 50 atomic% of A1, with the balance being unavoidable impurities and a single phase comprising a B 2 structure ^ phase. It is a ferromagnetic shape memory alloy having a phase structure or a two-phase structure composed of 7 phases and a β phase having a B 2 structure.

また本発明は、 Coを 35〜65原子%、 Gaを 20〜35原子%含有し、 残部が Niおよび 不可避的不純物からなる組成と、 B 2構造の^相からなる単相組織または B 2構 造の /3相と ί c c構造の第 2相からなる 2相組織とを有する強磁性形状記憶合金 である。  Further, the present invention provides a composition containing 35 to 65 atomic% of Co and 20 to 35 atomic% of Ga, with the balance being Ni and unavoidable impurities, and a single-phase structure or a B 2 structure composed of a ^ phase having a B 2 structure. This is a ferromagnetic shape memory alloy having a three-phase structure and a two-phase structure composed of a second phase having a cccc structure.

また本発明においては、 好適態様として、 前記した組成に加えて、 Feを 0. 001 〜30原子%および/または Mnを 0. 001〜30原子%含有することが好ましい。 また 前記した組成に加えて、 Ga、 Inおよび Siのうちの 1種を 0. 001〜50原子%または 2種以上を合計 0. 001〜50原子%含有することが好ましい。 また前記した組成に 加えて、 Inおよび Siのうちの 1種を 0. 001〜50原子%または 2種を合計 0. 001〜 50原子%含有することが好ましい。 また前記した組成に加えて、 Bを 0. 0005〜0. 01原子%、 Mgを 0. 0005〜0. 01原子%、 Cを 0. 0005〜0. 01原子%ぉょび を0. 0005 〜0. 01原子%のうちの 1種または 2種以上含有することが好ましい。 また前記し た組成に加えて、 Pt、 Pd、 Au、 Ag、 Nb、 V、 Ti、 Cr、 Zr、 Cu、 Wおよび Moのうち の 1種を 0· 001〜10原子%または 2種以上を合計 0. 001〜10原子%含有すること が好ましい。 さらに本発明において単相組織を有する場合は、 好適態様として、 B 2構造の ^相が単結晶であることが好ましい。 In a preferred embodiment of the present invention, in addition to the above-mentioned composition, it is preferable to contain 0.001 to 30 atomic% of Fe and / or 0.001 to 30 atomic% of Mn. In addition to the above-described composition, it is preferable that one of Ga, In, and Si is contained in an amount of 0.001 to 50 atomic%, or a total of two or more of them is contained in an amount of 0.001 to 50 atomic%. In addition to the above-described composition, it is preferable that one of In and Si is contained at 0.001 to 50 atomic%, or two of them are contained at 0.001 to 50 atomic% in total. In addition to the above-mentioned composition, B is 0.0005 to 0.01 atomic%, Mg is 0.0005 to 0.01 atomic%, C is 0.0005 to 0.01 atomic%, and 0.0005 is 0.0005 atomic%. It is preferable to contain one or more of 0.01 to 0.01 atomic%. In addition to the above-described composition, one of Pt, Pd, Au, Ag, Nb, V, Ti, Cr, Zr, Cu, W, and Mo is 0.001 to 10 atomic% or two or more. The total content is preferably 0.001 to 10 atomic%. Further, when the present invention has a single-phase structure, as a preferred embodiment, it is preferable that the ^ phase having the B2 structure is a single crystal.

また本発明において 2相組織を有する場合は、 好適態様として、 前記した 7相 の体積分率が 0.0:!〜 80体積%の範囲を満足することが好ましい。 あるいは前記し た f e e構造の第 2相が、 A 1構造のァ相および/または L 12 構造の 7' 相お よび Zまたは h c p構造の ε - C0 相であることが好ましく、 その ί c c構造の 第 2相の体積分率が 0.01〜80体積%の範囲を満足することが好ましい。 図面の簡単な説明 When the present invention has a two-phase structure, as a preferred embodiment, the volume fraction of the seven phases is 0.0 :! It is preferable to satisfy the range of ~ 80% by volume. Or the second phase of the above-described fee structure, epsilon of § phase and / or L 1 2 structure 7 'phase contact and Z or hcp structure of A 1 structures - is preferably C 0 phase, the I cc It is preferable that the volume fraction of the second phase of the structure satisfies the range of 0.01 to 80% by volume. BRIEF DESCRIPTION OF THE FIGURES

図 1は、 試験片の方位と磁界の方向を示す斜視図である。  FIG. 1 is a perspective view showing the orientation of the test piece and the direction of the magnetic field.

く符号の説明〉  Description of symbols>

1 試験片  1 Test piece

2 ストレンゲ一ジ 発明を実施するための最良の形態 2 best mode for carrying out the invention

本発明は、 成分として Coを含有し、 かつ B 2構造の^相からなる単相組織また は S相と他の相とからなる 2相組織を有する強磁性形状記憶合金である。  The present invention is a ferromagnetic shape memory alloy containing Co as a component and having a single-phase structure composed of a B 2 structure ^ phase or a two-phase structure composed of an S phase and another phase.

まず本発明の、 Coを 5〜70原子%含有する強磁性形状記憶合金の組成について 説明する。 本発明の強磁性形状記憶合金は、 Coを 5〜70原子%, Niを 5〜70原子 %, A1を 5〜50原子%含有し、 残部が不可避的不純物からなる。 さらに Feを 0.0 01〜30原子%, Mnを 0.001〜30原子%, Gaを 0.001〜50原子%, Inを 0.001〜50 原子%, Siを 0.001〜50原子%, Bを 0.0005〜0.01原子%, Mgを 0.0005〜0.01原 子%, Cを 0.0005〜0.01原子%, Pを 0.0005〜0.01原子%含有することが好まし い。 また、 Pt, Pd, Au, Ag, Nb, V, Ti, Cr, Zr, Cu, Wおよび Moのうちの 1種 を 0.001〜: L0原子%または 2種以上を合計 0.00:!〜 10原子%含有することが好ま しい。 First, the composition of the ferromagnetic shape memory alloy containing 5 to 70 atomic% of Co according to the present invention will be described. The ferromagnetic shape memory alloy of the present invention contains 5 to 70 atomic% of Co, 5 to 70 atomic% of Ni, and 5 to 50 atomic% of A1, with the balance being unavoidable impurities. Furthermore, Fe is 0.0101-30 atomic%, Mn is 0.001-30 atomic%, Ga is 0.001-50 atomic%, In is 0.001-50 atomic%, Si is 0.001-50 atomic%, B is 0.0005-0.01 atomic%, It is preferable to contain 0.0005 to 0.01 atomic% of Mg, 0.0005 to 0.01 atomic% of C, and 0.0005 to 0.01 atomic% of P. Further, one of Pt, Pd, Au, Ag, Nb, V, Ti, Cr, Zr, Cu, W and Mo is 0.001 to: L0 atomic% or a total of two or more is 0.00 :! ~ 10 atomic% is preferred New

Coは、 Niや Alとともに形状記憶特性および磁気特性を向上させる元素である。 しかし、 Co含有量が 5原子%未満では強磁性を消失する。 また、 Co含有量が 70原 子%を超えると形状記憶効果は発現しない。 したがって、 Co含有量は 5〜70原子 %の範囲を満足する必要がある。  Co is an element that improves shape memory characteristics and magnetic characteristics together with Ni and Al. However, if the Co content is less than 5 atomic%, the ferromagnetism disappears. If the Co content exceeds 70 atomic%, no shape memory effect is exhibited. Therefore, the Co content needs to satisfy the range of 5 to 70 atomic%.

Niは、 Coや A1とともに形状記憶特性を向上させる元素である。 しかし、 Ni含有 量が 5原子%未満または Ni含有量が 70原子%を超えると形状記憶効果は発現しな い。 したがって、 Ni含有量は 5〜70原子%の範囲を満足する必要がある。  Ni is an element that improves shape memory characteristics together with Co and A1. However, when the Ni content is less than 5 atomic% or the Ni content exceeds 70 atomic%, the shape memory effect is not exhibited. Therefore, the Ni content must satisfy the range of 5 to 70 atomic%.

A1は、 Coや Niとともに形状記憶特性および磁気特性を向上させる元素である。 しかし、 A1含有量が 5原子%未満または A1含有量が 50原子%を超えると形状記憶 効果は発現しない。 したがって、 A1含有量は 5〜50原子%の範囲を満足する必要 力 s ¾>る。 A1 is an element that improves shape memory characteristics and magnetic characteristics together with Co and Ni. However, when the A1 content is less than 5 atomic% or the A1 content exceeds 50 atomic%, the shape memory effect is not exhibited. Thus, A1 content Ru required force s ¾ satisfying the range of 5 to 50 atomic%>.

Feは、 B 2構造 (いわゆる CeCl構造) の/?相の存在領域を広げる元素であり、 また B 2構造の ^相を主とする基地組織がマルテンサイ ト変態を生じる温度 (以 下、 マルテンサイト変態温度という) および磁気特性が常磁性から強磁性に転移 する温度 (以下、 キュリー温度という) を変化させる元素である。 しかし、 Fe含 有量が 0. 001原子%未満では B 2構造の 3相の存在領域を広げる効果が発揮され ない。 また、 Fe含有量が 30原子%を超えると B 2構造の /3相の存在領域を広げる 効果が飽和する。 したがって、 Fe含有量は 0. 001〜30原子%の範囲を満足するの が好ましい。  Fe is an element that expands the region where the / 2 phase of the B 2 structure (the so-called CeCl structure) exists, and the temperature at which the base structure mainly composed of the ^ phase of the B 2 structure causes martensitic transformation (hereinafter, martensitic transformation). It is an element that changes the temperature at which the magnetic properties change from paramagnetic to ferromagnetic (hereinafter referred to as the Curie temperature). However, if the Fe content is less than 0.001 at%, the effect of expanding the region where the three phases of the B 2 structure exist cannot be exhibited. On the other hand, if the Fe content exceeds 30 atomic%, the effect of expanding the existence region of the / 3 phase of the B 2 structure is saturated. Therefore, the Fe content preferably satisfies the range of 0.001 to 30 atomic%.

Mnは、 B 2構造の /3相の生成を促進する元素であり、 またマルテンサイト変態 温度およびキュリー温度を変化させる元素である。 しかし、 Mn含有量が 0. 001原 子%未満では B 2構造の /3相の存在領域を広げる効果が発揮されない。 また、 Mn 含有量が 30原子%を超えると B 2構造の /3相の存在領域を広げる効果が飽和する c したがって、 Mn含有量は 0. 001〜30原子%の範囲を満足するのが好ましい。 Gaは、 Inや Siとともに、 マルテンサイ ト変態温度およびキュリー温度を変化さ せる元素であり、 Inと Siとの相乗効果によって、 マルテンサイ 卜変態温度および キユリ一温度を— 200〜 200°Cの範囲で自在に制御できる。 しカヽし、 Ga含有量が 0. 001原子%未満ではマルテンサイ ト変態温度およびキュリ一温度の制御効果が 発揮されない。 また、 Ga含有量が 50原子%を超えてもマルテンサイ ト変態温度お よびキュリー温度の制御効果が発揮されない。 したがって、 Ga含有量は 0. 001〜 50原子%の範囲を満足するのが好ましい。 Mn is an element that promotes the formation of the / 3 phase of the B 2 structure and an element that changes the martensitic transformation temperature and the Curie temperature. However, if the Mn content is less than 0.001 atomic%, the effect of expanding the region where the / 3 phase of the B2 structure is present is not exhibited. Further, c thus the Mn content is effective to widen the existing area of more than 30 atomic% B 2 structure / 3-phase saturated, Mn content is preferably within the ranges of 0.001 to 30 atomic% . Ga, together with In and Si, is an element that changes the martensite transformation temperature and the Curie temperature.The synergistic effect of In and Si reduces the martensite transformation temperature and the curry temperature within the range of -200 to 200 ° C. Can be controlled freely. However, if the Ga content is less than 0.001 atomic%, the effects of controlling the martensite transformation temperature and the Curie temperature are not exhibited. Further, even if the Ga content exceeds 50 atomic%, the effects of controlling the martensite transformation temperature and the Curie temperature are not exhibited. Therefore, the Ga content preferably satisfies the range of 0.001 to 50 atomic%.

Inは、 Gaや Siとともに、 マルテンサイ ト変態温度およびキュリー温度を変化さ せる元素であり、 Gaと Siとの相乗効果によって、 マルテンサイ ト変態温度および キュリー温度を一 200〜 200DCの範囲で自在に制御できる。 しかし、 In含有量が 0. 001原子%未満ではマルテンサイト変態温度およびキュリ一温度の制御効果が 発揮されない。 また、 In含有量が 50原子%を超えてもマルテンサイ ト変態温度お よびキュリー温度の制御効果が発揮されない。 したがって、 In含有量は 0. 001〜 50原子%の範囲を満足するのが好ましい。 In, along with Ga and Si, an element that changes the martensitic transformation temperature and the Curie temperature, by the synergistic effect of the Ga and Si, freely martensitic transformation temperature and the Curie temperature in the range of one 200 to 200 D C Can be controlled. However, when the In content is less than 0.001 atomic%, the effects of controlling the martensitic transformation temperature and the Curie temperature are not exhibited. Further, even if the In content exceeds 50 atomic%, the effect of controlling the martensite transformation temperature and the Curie temperature is not exhibited. Therefore, the In content preferably satisfies the range of 0.001 to 50 atomic%.

Siは、 Gaや Inとともに、 マルテンサイ ト変態温度およびキュリー温度を変化さ せる元素であり、 Gaと Inとの相乗効果によって、 マルテンサイ ト変態温度および キュリー温度を一 200〜 200°Cの範囲で自在に制御できる。 し力、し、 Si含有量が 0. 001原子%未満ではマルテンサイト変態温度およびキュリー温度の制御効果が 発揮されない。 また、 Si含有量が 50原子%を超えてもマルテンサイ ト変態温度お よびキュリー温度の制御効果が発揮されない。 したがって、 Si含有量は 0. 001~ 50原子%の範囲を満足するのが好ましい。  Si, together with Ga and In, is an element that changes the martensite transformation temperature and the Curie temperature.The synergistic effect of Ga and In allows the martensite transformation temperature and the Curie temperature to be adjusted within the range of 200 to 200 ° C. Can be controlled. When the Si content is less than 0.001 atomic%, the effects of controlling the martensitic transformation temperature and the Curie temperature are not exhibited. Further, even if the Si content exceeds 50 atomic%, the control effects of the martensite transformation temperature and the Curie temperature are not exhibited. Therefore, the Si content preferably satisfies the range of 0.001 to 50 atomic%.

Bは、 Mg, Cや Pとともに、 組織を微細化し、 材料の延性および形状記憶特性 を向上させる元素である。 しかし、 B含有量が 0. 0005原子%未満では組織の微細 化および材料の延性向上の効果が発揮されない。 また、 B含有量が 0. 01原子%を 超えると微細化および延性向上の効果が飽和する。 したがって、 B含有量は 0. 00 05〜 01原子%の範囲を満足するのが好ましい。 B, together with Mg, C and P, is an element that refines the structure and improves the ductility and shape memory properties of the material. However, when the B content is less than 0.0005 atomic%, the effects of making the structure finer and improving the ductility of the material are not exhibited. On the other hand, if the B content exceeds 0.01 atomic%, the effect of miniaturization and improvement of ductility saturates. Therefore, the B content is 0.00 It is preferable to satisfy the range of 05 to 01 atomic%.

Mgは、 B , Cや Pとともに、 組織を微細化し、 材料の延性および形状記憶特性 を向上させる元素である。 しかし、 Mg含有量が 0. 0005原子%未満では組織の微細 化および延性向上の効果が発揮されない。 また、 Mg含有量が 0. 01原子%を超える と微細化および延性向上の効果が飽和する。 したがって、 Mg含有量は 0. 0005〜0. 01原子%の範囲を満足するのが好ましい。  Mg, together with B, C and P, is an element that refines the structure and improves the ductility and shape memory properties of the material. However, when the Mg content is less than 0.0005 atomic%, the effects of making the structure finer and improving the ductility are not exhibited. If the Mg content exceeds 0.01 atomic%, the effects of miniaturization and improvement of ductility are saturated. Therefore, the Mg content preferably satisfies the range of 0.0005 to 0.01 atomic%.

Cは、 B, Mgや Pとともに、 組織を微細化し、 材料の延性および形状記憶特性 を向上させる元素である。 しかし、 C含有量が 0. 0005原子%未満では組織の微細 化および材料の延性向上の効果が発揮されない。 また、 C含有量が 0. 01原子%を 超えると微細化および延性向上の効果が飽和する。 したがって、 C含有量は 0. 00 05〜0. 01原子%の範囲を満足するのが好ましい。  C, together with B, Mg and P, is an element that refines the structure and improves the ductility and shape memory properties of the material. However, if the C content is less than 0.0005 atomic%, the effects of miniaturizing the structure and improving the ductility of the material are not exhibited. If the C content exceeds 0.01 atomic%, the effects of miniaturization and improvement of ductility are saturated. Therefore, the C content preferably satisfies the range of 0.0005 to 0.01 atomic%.

Pは、 B, Mgや Cとともに、 組織を微細化し、 材料の延性および形状記憶特性 を向上させる元素である。 しかし、 P含有量が 0. 0005原子%未満では組織の微細 化および材料の延性向上の効果が発揮されない。 また、 P含有量が 0. 01原子%を 超えると微細化および延性向上の効果が飽和する。 したがって、 P含有量は 0. 00 05〜0. 01原子%の範囲を満足するのが好ましい。  P, together with B, Mg and C, is an element that refines the structure and improves the ductility and shape memory properties of the material. However, if the P content is less than 0.0005 atomic%, the effects of miniaturizing the structure and improving the ductility of the material are not exhibited. If the P content exceeds 0.01 atomic%, the effects of miniaturization and improvement of ductility are saturated. Therefore, the P content preferably satisfies the range of 0.0005 to 0.01 atomic%.

Pt, Pd, Au, Ag, Nb, V , Ti, Cr, Zr, Cu, Wおよび Moは、 いずれもマルテン サイト変態温度やキュリー温度を変化させるだけでなく、 組織を微細化し、 材料 の延性を向上させる元素である。 しかし、 これらの元素が 0. 001原子%未満では 組織の微細化および材料の延性向上の効果が発揮されない。 また、 これらの元素 が 10原子%を超えると微細化および延性の向上効果が飽和する。 したがって、 こ れらの元素を 1種添加する場合は、 その含有量は 0. 001〜10原子%の範囲を満足 し、 2種以上添加する場合は、 その含有量は合計 0. 001〜; L0原子%の範囲を満足 するのが好ましい。  All of Pt, Pd, Au, Ag, Nb, V, Ti, Cr, Zr, Cu, W and Mo not only change the martensitic transformation temperature and Curie temperature, but also refine the structure and improve the ductility of the material. It is an element to improve. However, if these elements are less than 0.001 at%, the effects of making the structure finer and improving the ductility of the material are not exhibited. If these elements exceed 10 atomic%, the effect of miniaturization and improvement of ductility saturates. Therefore, when one of these elements is added, its content satisfies the range of 0.001 to 10 atomic%, and when two or more of these elements are added, the total content is 0.001 to; It is preferable to satisfy the range of L0 atomic%.

次に本発明の、 Coを 5〜70原子%含有する強磁性形状記憶合金の組織について 説明する。 本発明の強磁性形状記憶合金は、 B 2構造 (いわゆる CeCl構造) の β 相からなる単相組織を有する力、、 または ί c c構造の 7相と Β 2構造の β相から なる 2相組織を有する。 Next, regarding the structure of the ferromagnetic shape memory alloy containing 5 to 70 atomic% of Co according to the present invention, explain. The ferromagnetic shape memory alloy of the present invention has a force having a single phase structure composed of a β phase of B 2 structure (so-called CeCl structure), or a two phase structure composed of 7 phases of ί cc structure and β phase of Β 2 structure. Having.

単相組織を有する場合は、 単結晶であっても良いし、 あるいは多結晶であって も良い。 ただし単結晶の方が、 形状記憶特性や磁気特性が優れているので好まし い。 本発明においては、 単結晶を得る方法は特定の方法に限定せず、 チヨクラル スキー法等の従来から知られている方法を用いれば良い。  When it has a single phase structure, it may be a single crystal or a polycrystal. However, single crystals are preferred because of their excellent shape memory properties and magnetic properties. In the present invention, a method for obtaining a single crystal is not limited to a specific method, and a conventionally known method such as a Chiyoklarski method may be used.

2相組織は、 単相組織に比べて延性, 形状記憶特性および磁気特性が著しく向 上するので一層好ましい。 ただし 7相の体積分率が 0. 01体積%未満では形状記憶 特性や磁気特性の向上効果が発揮されない。 また、 y相の体積分率が 80体積%を 超えると形状記憶特性や磁気特性の向上効果が飽和する。 したがって、 y相の体 積分率は 0. 01〜80体積%の範囲を満足するのが好ましい。  The two-phase structure is more preferable because the ductility, shape memory properties and magnetic properties are remarkably improved as compared with the single-phase structure. However, if the volume fraction of the seven phases is less than 0.01% by volume, the effect of improving shape memory characteristics and magnetic characteristics is not exhibited. On the other hand, when the volume fraction of the y-phase exceeds 80% by volume, the effect of improving shape memory properties and magnetic properties is saturated. Therefore, the volume fraction of the y phase preferably satisfies the range of 0.01 to 80% by volume.

本発明の強磁性形状記憶合金を製造する場合は、 溶湯を凝固させて 500〜: L400 6Cで熱処理を行なった後、 焼入れを行なう。 こうして 相と 7相との 2相組織が 得られるので、 その後、 所定の形状に加工する際に優れた延性を発揮するのであ o When producing the ferromagnetic shape memory alloy of the present invention, the molten metal is solidified, heat-treated at 500 to L400 6 C, and then quenched. In this way, a two-phase structure of a phase and a seven phase is obtained, and then, when processed into a predetermined shape, excellent ductility is exhibited.

焼入れした後、 さらに冷間圧延または熱間圧延を行なって板材とした後、 所定 の形状に加工し、 500〜1400°Cで再結晶熱処理を行なうことによって、 形状記憶 機能を付与された B 2構造の ^相からなる単相組織の強磁性形状記憶合金が得ら れる。  After quenching, the sheet material is further subjected to cold rolling or hot rolling to form a sheet material, processed into a predetermined shape, and subjected to a recrystallization heat treatment at 500 to 1400 ° C., thereby imparting a shape memory function to B 2. A ferromagnetic shape memory alloy with a single-phase structure consisting of the ^ phase is obtained.

この単相組織の強磁性形状記憶合金を、 さらに 500〜1400°Cで熱処理して /3相 の結晶粒界に 7相を優先的に析出させることによって、 形状記憶機能を付与され た B 2構造の^相と延性に優れた ί c c構造の 7相からなる 2相組織の強磁性形 状記憶合金が得られる。  This single-phase ferromagnetic shape memory alloy is further heat-treated at 500 to 1400 ° C to preferentially precipitate seven phases at the / 3 phase grain boundary, thereby providing B2 with a shape memory function. A ferromagnetic shape memory alloy with a two-phase structure consisting of a ^ phase with a structure and seven phases with a ί cc structure with excellent ductility is obtained.

次に本発明の、 Coを 35〜65原子%含有する強磁性形状記憶合金の組成について 説明する。 本発明の強磁性形状記憶合金は、 Coを 35^65原子%, Gaを 20〜35原子 %含有し、 残部が Niおよび不可避的不純物からなる。 さらに Feを 0. 001〜30原子 %, Mnを 0. 001〜30原子%, Inを 0. 001〜50原子%, Siを 0. 001〜50原子%, B を 0. 0005〜0. 01原子%, Mgを 0. 0005〜0. 01原子%, Cを 0. 0005〜0. 01原子 P を 0. 0005〜0. 01原子%含有することが好ましい。 また、 Pt, Pd, Au, Ag, Nb, V, Ti, Cr, Zr, Cu, Wおよび Moのうちの 1種を 0. 001〜; L0原子%または 2種以上を 合計 0. 001〜10原子%含有することが好ましい。 Next, the composition of the ferromagnetic shape memory alloy containing 35 to 65 atomic% of Co according to the present invention will be described. explain. The ferromagnetic shape memory alloy of the present invention contains 35 Co65 atomic% of Co and 20-35 atomic% of Ga, with the balance being Ni and unavoidable impurities. Furthermore, 0.001 to 30 atomic% of Fe, 0.001 to 30 atomic% of Mn, 0.001 to 50 atomic% of In, 0.001 to 50 atomic% of Si, and 0.0005 to 0.01 of B Atomic%, 0.0005 to 0.01 atomic% of Mg, 0.0005 to 0.01 atomic of C, and 0.0005 to 0.01 atomic% of P are preferable. In addition, one of Pt, Pd, Au, Ag, Nb, V, Ti, Cr, Zr, Cu, W and Mo is 0.001 ~; L0 atomic% or two or more is 0.001 ~ 10 It is preferable to contain the atom%.

Coは、 Niとともに形状記憶特性および磁気特性を向上させる元素である。 しか し、 Co含有量が 35原子%未満では強磁性を消失する。 また、 Co含有量が 65原子% を超えると形状記憶効果は発現しない。 したがって、 Co含有量は 35〜65原子%の 範囲を満足する必要がある。  Co is an element that improves shape memory characteristics and magnetic characteristics together with Ni. However, if the Co content is less than 35 atomic%, the ferromagnetism disappears. If the Co content exceeds 65 atomic%, no shape memory effect is exhibited. Therefore, the Co content must satisfy the range of 35 to 65 atomic%.

Gaは、 マルテンサイ ト変態温度およびキュリー温度を変化させる元素であり、 マルテンサイ ト変態温度およびキュリー温度を— 200 〜 200°Cの範囲で自在に制 御できる。 しかし、 Ga含有量が 20原子%未満ではマルテンサイ ト変態温度および キュリー温度の制御効果が発揮されない。 また、 Ga含有量が 35原子%を超えても マルテンサイ ト変態温度およびキュリー温度の制御効果が発揮されない。 したが つて、 Ga含有量は 20〜35原子%の範囲を満足する必要がある。  Ga is an element that changes the martensite transformation temperature and the Curie temperature, and can freely control the martensite transformation temperature and the Curie temperature in the range of -200 to 200 ° C. However, if the Ga content is less than 20 atomic%, the effects of controlling the martensite transformation temperature and the Curie temperature are not exhibited. Further, even if the Ga content exceeds 35 atomic%, the effects of controlling the martensite transformation temperature and the Curie temperature are not exhibited. Therefore, the Ga content must satisfy the range of 20 to 35 atomic%.

は、 Coとともに形状記憶特性を向上させる元素であり、 Ni含有量が不足した り、 あるいは過剰であると形状記憶効果は発現しない。 したがって、 上記した範 囲内で含有される Coおよび Gaの残部を Niとする必要がある。  Is an element that improves shape memory characteristics together with Co, and the shape memory effect is not exhibited if the Ni content is insufficient or excessive. Therefore, the balance of Co and Ga contained within the above range must be Ni.

Feは、 B 2構造 (いわゆる CeCl構造) の /3相の存在領域を広げる元素であり、 また B 2構造の /3相を主とする基地組織がマルテンサイ ト変態を生じる温度 (以 下、 マルテンサイ ト変態温度という) および磁気特性が常磁性から強磁性に転移 する温度 (以下、 キュリー温度という) を変化させる元素である。 し力、し、 Fe含 有量が 0. 001原子%未満では B 2構造の 相の存在領域を広げる効果が発揮され ない。 また、 Fe含有量が 30原子%を超えると B 2構造の^相の存在領域を広げる 効果が飽和する。 したがって、 Fe含有量は 0. 001〜30原子%の範囲を満足するの が好ましい。 Fe is an element that expands the existence region of the / 3 phase of the B 2 structure (so-called CeCl structure). It is an element that changes the temperature at which the magnetic properties change from paramagnetic to ferromagnetic (hereinafter referred to as the Curie temperature). When the Fe content is less than 0.001 atomic%, the effect of expanding the region where the B 2 structure phase exists is exhibited. Absent. On the other hand, if the Fe content exceeds 30 atomic%, the effect of expanding the region where the ^ phase having the B 2 structure exists is saturated. Therefore, the Fe content preferably satisfies the range of 0.001 to 30 atomic%.

Mnは、 B 2構造の /3相の生成を促進する元素であり、 またマルテンサイ ト変態 温度およびキュリー温度を変化させる元素である。 しかし、 Mn含有量が 0. 001原 子%未満では B 2構造の /3相の存在領域を広げる効果が発揮されない。 また、 Mn 含有量が 30原子%を超えると B 2構造の ^相の存在領域を広げる効果が飽和する c したがって、 Mn含有量は 0. 001〜30原子%の範囲を満足するのが好ましい。 Mn is an element that promotes the formation of the / 3 phase of the B 2 structure and an element that changes the martensite transformation temperature and the Curie temperature. However, if the Mn content is less than 0.001 atomic%, the effect of expanding the region where the / 3 phase of the B2 structure is present is not exhibited. Further, c effect of widening the existing area of ^ phases of B 2 structure when the Mn content exceeds 30 atomic% is saturated Therefore, Mn content is preferably within the ranges of 0.001 to 30 atomic%.

Inは、 Siとともに、 マルテンサイ ト変態温度およびキュリー温度を変化させる 元素であり、 Siとの相乗効果によって、 マルテンサイ ト変態温度およびキュリー 温度を— 200 〜 200°Cの範囲で自在に制御できる。 しかし、 In含有量が 0. 001原 子%未満ではマルテンサイ ト変態温度およびキュリ一温度の制御効果が発揮され ない。 また、 In含有量が 50原子%を超えてもマルテンサイト変態温度およびキュ リ一温度の制御効果が発揮されない。 したがって、 In含有量は 0. 001〜50原子% の範囲を満足するのが好ましい。  In is an element that changes the martensite transformation temperature and the Curie temperature together with Si, and the synergistic effect with Si can freely control the martensite transformation temperature and the Curie temperature in the range of -200 to 200 ° C. However, when the In content is less than 0.001 atomic%, the effects of controlling the martensite transformation temperature and the Curie temperature are not exhibited. Further, even if the In content exceeds 50 atomic%, the effect of controlling the martensitic transformation temperature and the Curie temperature is not exhibited. Therefore, the In content preferably satisfies the range of 0.001 to 50 atomic%.

Siは、 Inとともに、 マルテンサイ ト変態温度およびキュリー温度を変化させる 元素であり、 Inとの相乗効果によって、 マルテンサイ ト変態温度およびキュリー 温度を— 200 〜 200°Cの範囲で自在に制御できる。 しかし、 Si含有量が 0. 001原 子%未満ではマルテンサイ ト変態温度およびキュリー温度の制御効果が発揮され ない。 また、 Si含有量が 50原子%を超えてもマルテンサイト変態温度およびキュ リ一温度の制御効果が発揮されない。 したがって、 Si含有量は 0. 001〜50原子% の範囲を満足するのが好ましい。  Si, together with In, is an element that changes the martensite transformation temperature and Curie temperature, and the synergistic effect with In allows the martensite transformation temperature and Curie temperature to be freely controlled in the range of -200 to 200 ° C. However, when the Si content is less than 0.001 atomic%, the control effects of the martensite transformation temperature and the Curie temperature are not exhibited. Further, even if the Si content exceeds 50 atomic%, the effect of controlling the martensitic transformation temperature and the Curie temperature is not exhibited. Therefore, the Si content preferably satisfies the range of 0.001 to 50 atomic%.

Bは、 Mg, Cや Pとともに、 組織を微細化し、 材料の延性および形状記憶特性 を向上させる元素である。 しかし、 B含有量が 0. 0005原子%未満では組織の微細 化および材料の延性向上の効果が発揮されない。 また、 B含有量が 0. 01原子%を 超えると微細化および延性向上の効果が飽和する。 したがって、 B含有量は 0. 00 05〜0. 01原子%の範囲を満足するのが好ましい。 B, together with Mg, C and P, is an element that refines the structure and improves the ductility and shape memory properties of the material. However, when the B content is less than 0.0005 atomic%, the effects of making the structure finer and improving the ductility of the material are not exhibited. The B content is 0.01 atomic%. If it exceeds, the effects of miniaturization and improvement of ductility are saturated. Therefore, the B content preferably satisfies the range of 0.0005 to 0.01 atomic%.

Mgは、 B , Cや Pとともに、 組織を微細化し、 材料の延性および形状記憶特性 を向上させる元素である。 しかし、 ¾含有量が 0. 0005原子%未満では組織の微細 化および延性向上の効果が発揮されない。 また、 Mg含有量が 0. 01原子%を超える と微細化および延性向上の効果が飽和する。 したがって、 Mg含有量は 0. 0005〜0. 01原子%の範囲を満足するのが好ましい。  Mg, together with B, C and P, is an element that refines the structure and improves the ductility and shape memory properties of the material. However, if the content is less than 0.0005 atomic%, the effect of making the structure finer and improving the ductility is not exhibited. If the Mg content exceeds 0.01 atomic%, the effects of miniaturization and improvement of ductility are saturated. Therefore, the Mg content preferably satisfies the range of 0.0005 to 0.01 atomic%.

Cは、 B, Mgや Pとともに、 組織を微細化し、 材料の延性および形状記憶特性 を向上させる元素である。 しかし、 C含有量が 0. 0005原子%未満では組織の微細 化および材料の延性向上の効果が発揮されない。 また、 C含有量が 0. 01原子%を 超えると微細化および延性向上の効果が飽和する。 したがって、 C含有量は 0. 00 05〜0. 01原子%の範囲を満足するのが好ましい。  C, together with B, Mg and P, is an element that refines the structure and improves the ductility and shape memory properties of the material. However, if the C content is less than 0.0005 atomic%, the effects of miniaturizing the structure and improving the ductility of the material are not exhibited. If the C content exceeds 0.01 atomic%, the effects of miniaturization and improvement of ductility are saturated. Therefore, the C content preferably satisfies the range of 0.0005 to 0.01 atomic%.

Pは、 B , Mgや Cとともに、 組織を微細化し、 材料の延性および形状記憶特性 を向上させる元素である。 しかし、 P含有量が 0. 0005原子%未満では組織の微細 化および材料の延性向上の効果が発揮されない。 また、 P含有量が 0. 01原子%を 超えると微細化および延性向上の効果が飽和する。 したがって、 P含有量は 0. 00 05〜0. 01原子%の範囲を満足するのが好ましい。  P, together with B, Mg and C, is an element that refines the structure and improves the ductility and shape memory properties of the material. However, if the P content is less than 0.0005 atomic%, the effects of miniaturizing the structure and improving the ductility of the material are not exhibited. If the P content exceeds 0.01 atomic%, the effects of miniaturization and improvement of ductility are saturated. Therefore, the P content preferably satisfies the range of 0.0005 to 0.01 atomic%.

Pt, Pd, Au, Ag, Nb, V , Ti, Cr, Zr, Cu, Wおよび Moは、 いずれもマルテン サイ ト変態温度やキュリー温度を変化させるだけでなく、 組織を微細化し、 材料 の延性を向上させる元素である。 しかし、 これらの元素が 0. 001原子%未満では 組織の微細化および材料の延性向上の効果が発揮されない。 また、 これらの元素 が 10原子%を超えると微細化および延性の向上効果が飽和する。 したがって、 こ れらの元素を 1種添加する場合は、 その含有量は 0. 001〜10原子%の範囲を満足 し、 2種以上添加する場合は、 その含有量は合計 0. 001〜: L0原子%の範囲を満足 するのが好ましい。 次に本発明の、 Coを 35〜65原子%含有する強磁性形状記憶合金の組織について 説明する。 本発明の強磁性形状記憶合金は、 B 2構造 (いわゆる CeCl構造) の β 相からなる単相組織を有するか、 または Β 2構造の^相と f c c構造の第 2相か らなる 2相組織を有する。 All of Pt, Pd, Au, Ag, Nb, V, Ti, Cr, Zr, Cu, W and Mo not only change the martensite transformation temperature and Curie temperature, but also refine the structure and ductility of the material. Is an element that improves the However, if these elements are less than 0.001 at%, the effects of making the structure finer and improving the ductility of the material are not exhibited. If these elements exceed 10 atomic%, the effect of miniaturization and improvement of ductility saturates. Therefore, when one of these elements is added, the content satisfies the range of 0.001 to 10 atomic%, and when two or more of these elements are added, the total content is 0.001 to: It is preferable to satisfy the range of L0 atomic%. Next, the structure of the ferromagnetic shape memory alloy containing 35 to 65 atomic% of Co according to the present invention will be described. The ferromagnetic shape memory alloy of the present invention has a single phase structure composed of a β phase having a B 2 structure (so-called CeCl structure) or a two phase structure composed of a ^ phase having a Β 2 structure and a second phase having an fcc structure. Having.

単相組織を有する場合は、 単結晶であっても良いし、 あるいは多結晶であって も良い。 ただし単結晶の方が、 形状記憶特性や磁気特性が優れているので好まし い。 本発明においては、 単結晶を得る方法は特定の方法に限定せず、 チヨクラル スキー法等の従来から知られている方法を用いれば良い。  When it has a single phase structure, it may be a single crystal or a polycrystal. However, single crystals are preferred because of their excellent shape memory properties and magnetic properties. In the present invention, a method for obtaining a single crystal is not limited to a specific method, and a conventionally known method such as a Chiyoklarski method may be used.

2相組織は、 単相組織に比べて延性, 形状記憶特性および磁気特性が著しく向 上するので一層好ましい。 2相組織の第 2相は、 f c c構造を有する A 1構造の ァ相および/または L 1 2 構造のァ' 相および または h c p構造の ε — C。 相 であることが好ましい。 ただし第 2相の体積分率が 0. 01体積%未満では形状記憶 特性や磁気特性の向上効果が発揮されない。 また、 第 2相の体積分率が 80体積% を超えると形状記憶特性や磁気特性の向上効果が飽和する。 したがって、 第 2相 の体積分率は 0. 01〜80体積%の範囲を満足するのが好ましい。 The two-phase structure is more preferable because the ductility, shape memory properties and magnetic properties are remarkably improved as compared with the single-phase structure. The second phase of the dual phase structure is of A 1 structure § phase and / or L 1 2 Structure of § 'phase and or hcp structure having an fcc structure epsilon - C. It is preferably a phase. However, if the volume fraction of the second phase is less than 0.01% by volume, the effect of improving shape memory properties and magnetic properties is not exhibited. On the other hand, when the volume fraction of the second phase exceeds 80% by volume, the effect of improving shape memory properties and magnetic properties is saturated. Therefore, the volume fraction of the second phase preferably satisfies the range of 0.01 to 80% by volume.

本発明の強磁性形状記憶合金を製造する場合は、 溶湯を凝固させて 500〜1400 °Cで熱処理を行なった後、 焼入れを行なう。 こうして 相と第 2相 (すなわちァ 相および Zまたは 7 ' 相) との 2相組織が得られるので、 その後、 所定の形状に 加工する際に優れた延性を発揮するのである。  When producing the ferromagnetic shape memory alloy of the present invention, the molten metal is solidified, heat-treated at 500 to 1400 ° C., and then quenched. In this way, a two-phase structure of the phase and the second phase (ie, the α phase and the Z or 7 ′ phase) is obtained, and then, when processed into a predetermined shape, it exhibits excellent ductility.

焼入れした後、 さらに冷間圧延または熱間圧延を行なって板材とした後、 所定 の形状に加工し、 500〜1400°Cで再結晶熱処理を行なうことによって、 形状記憶 機能を付与された B 2構造の^相からなる単相組織の強磁性形状記憶合金が得ら れる。  After quenching, the sheet material is further subjected to cold rolling or hot rolling to form a sheet material, processed into a predetermined shape, and subjected to a recrystallization heat treatment at 500 to 1400 ° C., thereby imparting a shape memory function to B 2. A ferromagnetic shape memory alloy with a single-phase structure consisting of the ^ phase is obtained.

この単相組織の強磁性形状記憶合金を、 さらに 300〜1400°Cで熱処理して ^相 の結晶粒界に 7相および/または 7, 相および Zまたは ε — (:。 相を優先的に析 出させることによって、 形状記憶機能を付与された B 2構造の /3相と延性に優れ た f e e構造の第 2相 (すなわち 7相および/または 7 ' 相) からなる 2相組織 の強磁性形状記憶合金が得られる。 This ferromagnetic shape memory alloy having a single phase structure is further heat-treated at 300 to 1400 ° C, and the 7 phase and / or the 7 phase and the Z or ε — (:. Analysis The ferromagnetic shape of a two-phase structure consisting of a B2 structure / 3 phase with shape memory function and a fee structure second phase (ie, 7 phase and / or 7 'phase) with excellent ductility A memory alloy is obtained.

く実施例〉  Example>

(実施例 1 )  (Example 1)

表 1に示す成分の合金を溶製した後、 凝固させて、 500〜1400°Cで熱処理を行 ない、 さらに焼入れおよび冷間圧延を施した後、 所定の大きさの板材を切り出し て 500〜1400でで再結晶化熱処理を行ない、 形状記憶機能を付与された多結晶の 相 (B 2構造) の強磁性形状記憶合金を製造した。 これを発明例 1および発明 ¾ とする。  After smelting the alloys of the components shown in Table 1, solidifying them, performing heat treatment at 500 to 1400 ° C, further quenching and cold rolling, cutting out a sheet of predetermined size, At 1400, a recrystallization heat treatment was performed to produce a polycrystalline phase (B2 structure) ferromagnetic shape memory alloy having a shape memory function. This is referred to as Invention Example 1 and Invention ¾.

発明例 3および発明例 4は、 発明例 1, 発明例 2と同様の方法で多結晶の ^相 を生成させた後、 さらに歪み焼なましによって単結晶の^相 (B 2構造) の強磁 性形状記憶合金を製造した例である。  Inventive Examples 3 and 4 show that the polycrystalline ^ phase was formed in the same manner as in Inventive Examples 1 and 2, and then the single crystal ^ phase (B 2 structure) was strengthened by strain annealing. This is an example of manufacturing a magnetic shape memory alloy.

発明例 5および発明例 6は、 発明例 1, 発明例 2と同様の方法で多結晶の 相 を生成させた後、 さらに 500〜; 1350°Cで熱処理して yS相の結晶粒界に r相を析出 させて、 形状記憶機能を付与された B 2構造の )8相と延性に優れた ί c c構造の 7相との 2相組織の強磁性形状記憶合金を製造した例である。 発明例 5の 7相の 体積分率は 10体積%であり、 発明例 6の Ί相の体積分率は 40体積%であつた。 比較例 1は Coの含有量が本発明の範囲を外れる例であり、 比較例 2は Niの含有 量が本発明の範囲を外れる例であり、 比較例 3は A1の含有量が本発明の範囲を外 れる例である。 比較例 1は、 発明例 1 , 発明例 2と同様の方法で多結晶; S相を生 成させた。 比較例 2は、 発明例 3 , 発明例 4と同様の方法で単結晶^相を生成さ せた。 比較例 3は、 発明例 5 , 発明例 6と同様の方法で 7相と 相との 2相組織 を生成させた。 比較例 3の 7相の体積分率は 90体積%であった。  Inventive Example 5 and Inventive Example 6 were obtained by forming a polycrystalline phase in the same manner as in Inventive Example 1 and Inventive Example 2, and then heat-treating at 500 to 1350 ° C to bring the yS phase grain boundary to r. In this example, a phase is precipitated to produce a ferromagnetic shape memory alloy having a two-phase structure of 8 phases having a B2 structure having a shape memory function and 7 phases having a 延 cc structure having excellent ductility. The volume fraction of the 7 phase of Invention Example 5 was 10% by volume, and the volume fraction of the Ί phase of Invention Example 6 was 40% by volume. Comparative Example 1 is an example in which the content of Co is out of the range of the present invention, Comparative Example 2 is an example in which the content of Ni is out of the range of the present invention, and Comparative Example 3 is an example in which the content of A1 is in the range of the present invention. This is an example that is out of range. In Comparative Example 1, a polycrystal; S phase was produced in the same manner as in Inventive Examples 1 and 2. In Comparative Example 2, a single-crystal phase was produced in the same manner as in Inventive Examples 3 and 4. In Comparative Example 3, a two-phase structure consisting of seven phases was formed in the same manner as in Inventive Examples 5 and 6. The volume fraction of the seven phases in Comparative Example 3 was 90% by volume.

発明例 1〜 6および比較例 1〜 3について形状記憶特性および磁歪特性を調査 した。 また冷間圧延率についても調査した。 その結果を表 2に示す。 形状記憶特性は、 50mmx 5 mm x 0.3mm の帯状の試験片を切り出し、 曲げ試験を 行なって 5 %曲げ歪を加えたときの回復率を測定した。 Investigation of shape memory characteristics and magnetostriction characteristics of Invention Examples 1 to 6 and Comparative Examples 1 to 3 did. The cold rolling reduction was also investigated. The results are shown in Table 2. For the shape memory characteristics, a strip of 50 mm x 5 mm x 0.3 mm was cut out and subjected to a bending test to measure the recovery rate when a 5% bending strain was applied.

磁歪特性は、 単結晶^相である発明例 3〜 4および比較例 2については、 図 1 に示すように、 寸法 5 ππηΧ 5匪 X 5 mmの試験片を切り出し、 (1 1 0) 面にスト レンゲ一ジ 2を装着して、 強さ 30AZmの磁界 Hを [0 0 1] 方向に印加して、 歪み量を測定した。 /3相と 7相との 2相組織である発明例 5, 6および比較例 3 については、 30mm X 10mm X 1匪の帯状の試験片を用い、 圧延方向に平行な向きに 磁場を加えたときの圧延方向の歪み量を測定した。  The magnetostriction characteristics of Invention Examples 3 to 4 and Comparative Example 2, which are a single crystal ^ phase, were cut out from a test piece with dimensions of 5ππηΧ5 The strain gauge 2 was mounted, and a magnetic field H having a strength of 30 AZm was applied in the [001] direction to measure the amount of strain. In Invention Examples 5, 6 and Comparative Example 3, which have a two-phase structure of / 3 phase and 7 phase, a magnetic field was applied in a direction parallel to the rolling direction using a 30 mm X 10 mm X 1 band-shaped test piece. The amount of strain in the rolling direction at that time was measured.

なお形状記憶特性の回復率 (%) は下記の (1)式で算出される値であり、 磁歪 特性 (%) は下記の (2)式で算出される値であり、 冷間圧延率 (%) は下記の ( 3)式で算出される値である。  The recovery rate (%) of the shape memory property is a value calculated by the following equation (1), and the magnetostrictive property (%) is a value calculated by the following equation (2). %) Is a value calculated by the following equation (3).

形状記憶特性の回復率 (%)  Recovery rate of shape memory characteristics (%)

= 100X { (ε d - ε r ) / ε d } · · · (1) ε d :変形させた後の表面歪み = 100X {(ε d -ε r) / ε d } · · · (1) ε d : surface distortion after deformation

ε r :回復させた時の表面歪み ε r : Surface distortion when recovered

磁歪特性 (%) = 100 X { (L2 -Li ) /Li } · · · (2)Magnetostrictive property (%) = 100 X {(L 2 -Li) / Li} · · · (2)

Li :磁場印加前の長さ (mm) Li: Length before applying magnetic field (mm)

L2 :磁場印加後の長さ (mm) L 2 : Length after applying magnetic field (mm)

冷間圧延率 (%) = 100 X { (t 1 - 2 ) /t 1 } · · · (3) t i :冷間圧延前の厚さ (mm)  Cold rolling rate (%) = 100 X {(t 1-2) / t 1} · · · (3) t i: thickness before cold rolling (mm)

t 2 :冷間圧延後の厚さ (mm) t 2 : Thickness after cold rolling (mm)

表 2から明らかなように、 発明例 1〜6と比較例 1〜3を比べると、 発明例の 方が、 形状記憶特性の回復率, 磁歪特性および冷間圧延率に優れた形状記憶合金 を得ることができた。 また発明例 1〜 6のうち、 単結晶 ^相の単相組織 (発明例 3 , 4 ) や /3相と 7相との 2相組織 (発明例 5, 6 ) にすることによって、 多結 晶 /3相の単相組織 (発明例 1 , 2 ) に比べて、 形伏記憶特性の回復率, 磁歪特性 および冷間圧延率が一層優れた強磁性形状記憶合金を得ることができた。 As is evident from Table 2, when the invention examples 1 to 6 are compared with the comparative examples 1 to 3, the invention example shows that the shape memory alloy which is excellent in the recovery rate of the shape memory property, the magnetostriction property, and the cold rolling rate is better. I got it. Among the invention examples 1 to 6, the single-phase structure of a single crystal ^ phase (invention example By forming a two-phase structure (3, 4) or a / 3 phase and a 7-phase (Invention Examples 5 and 6), compared with a polycrystalline / 3-phase single-phase structure (Invention Examples 1 and 2), A ferromagnetic shape memory alloy with more excellent recovery rate of yield memory property, magnetostriction property and cold rolling rate was obtained.

また、 特に加工性能に優れた (すなわち冷間圧延率の高い) 発明例 6や、 形状 記憶特性の回復率および磁歪特性に優れた発明例 5のように、 添加元素の種類と 添加量を適切に選択することによって、 目的や用途に応じた性能を有する強磁性 形状記憶合金を得ることが可能である。  In addition, as shown in Invention Example 6 which is particularly excellent in processing performance (that is, high in cold rolling ratio) and Invention Example 5 which is excellent in recovery rate of shape memory characteristics and magnetostriction characteristics, the type and amount of additive elements are appropriate. It is possible to obtain a ferromagnetic shape memory alloy having the performance according to the purpose and application by selecting the above.

(実施例 2 )  (Example 2)

表 3に示す成分の合金を溶製した後、 凝固させて、 実施例 1と同様に 500〜14 00°Cで熱処理を行ない、 さらに焼入れおよび冷間圧延を施した後、 所定の大きさ の板材を切り出して 500〜1400°Cで再結晶化熱処理を行ない、 形状記憶機能を付 与された多結晶の ^相 (B 2構造) の強磁性形状記憶合金を製造した。 これを発 明例 7および発明例 8とする。  After smelting the alloys of the components shown in Table 3, they were solidified, heat-treated at 500 to 1400 ° C in the same manner as in Example 1, further quenched and cold-rolled, and then cooled to a predetermined size. The sheet material was cut out and subjected to a recrystallization heat treatment at 500 to 1400 ° C to produce a polycrystalline ^ phase (B2 structure) ferromagnetic shape memory alloy with a shape memory function. These are referred to as Invention Example 7 and Invention Example 8.

発明例 9および発明例 10は、 発明例 7, 発明例 8と同様の方法で多結晶の /3相 を生成させた後、 さらに歪み焼なましによって単結晶の ^相 (B 2構造) の強磁 性形状記憶合金を製造した例である。  Inventive Examples 9 and 10 are obtained by forming a polycrystalline / 3 phase in the same manner as in Inventive Examples 7 and 8, and then subjecting the single-crystal ^ phase (B 2 structure) to strain annealing. This is an example of manufacturing a ferromagnetic shape memory alloy.

発明例 11および発明例 12は、 発明例 7, 発明例 8と同様の方法で多結晶の ^相 を生成させた後、 さらに 500〜: 1350°Cで熱処理して ^相の結晶粒界に 7相および Zまたは 7 ' 相を析出させて、 形状記憶機能を付与された B 2構造の /3相と延性 に優れた ί c c構造の第 2相 (すなわち 7相および Ζまたは 7 ' 相) との 2相組 織の強磁性形状記憶合金を製造した例である。 発明例 11の第 2相の体積分率は 10 体積%であり、 発明例 12の第 2相の体積分率は 40体積%であつた。  Inventive Examples 11 and 12 are similar to Inventive Examples 7 and 8 except that a polycrystalline ^ phase was generated in the same manner as in Inventive Examples 7 and 8, and then heat-treated at 500 to 1350 ° C to generate a ^ phase crystal boundary. Precipitated 7 phase and Z or 7 'phase, B2 structure / 3 phase with shape memory function and 2nd phase of 第 cc structure with excellent ductility (ie 7 phase and Ζ or 7' phase) This is an example of manufacturing a two-phase ferromagnetic shape memory alloy. The volume fraction of the second phase of Invention Example 11 was 10% by volume, and the volume fraction of the second phase of Invention Example 12 was 40% by volume.

比較例 4は Coの含有量が本発明の範囲を外れる例であり、 比較例 5は Gaの含有 量が本発明の範囲を外れる例である。 比較例 4は、 発明例 7, 発明例 8と同様の 方法で多結晶 j8相を生成させた。 比較例 5は、 発明例 11, 発明例 12と同様の方法 で /3相と第 2相との 2相組織を生成させた。 比較例 5の第 2相の体積分率は 90体 積%であった。 Comparative Example 4 is an example in which the content of Co is out of the range of the present invention, and Comparative Example 5 is an example in which the content of Ga is out of the range of the present invention. In Comparative Example 4, a polycrystalline j8 phase was produced in the same manner as in Inventive Examples 7 and 8. Comparative Example 5 was performed in the same manner as in Invention Examples 11 and 12. In this way, a two-phase structure of a third phase and a second phase was formed. The volume fraction of the second phase in Comparative Example 5 was 90% by volume.

発明例 7〜12および比較例 4〜 5について形状記憶特性および磁歪特性を調査 した。 また冷間圧延率についても調査した。 その結果を表 4に示す。  Shape memory characteristics and magnetostriction characteristics of Inventive Examples 7 to 12 and Comparative Examples 4 to 5 were investigated. The cold rolling reduction was also investigated. The results are shown in Table 4.

形状記憶特性は、 50mmx 5腿 x0.3mm の帯状の試験片を切り出し、 曲げ試験を 行なつて 2 %曲げ歪を加えたときの回復率を測定した。  For shape memory characteristics, a strip of 50 mm x 5 thigh x 0.3 mm was cut out and subjected to a bending test to measure the recovery rate when 2% bending strain was applied.

磁歪特性は、 単結晶/?相である発明例 9〜: L0および比較例 5については、 図 1 に示すように、 寸法 5mmx 5匪 X 5 mmの試験片を切り出し、 (1 1 0) 面にスト レンゲ一ジ 2を装着して、 強さ 30A/mの磁界 Hを [0 0 1] 方向に印加して、 歪み量を測定した。 /3相と第 2相 (すなわち 7相および/または 7' 相) との 2 相組織である発明例 11, 12および比較例 5については、 30minxl0minx lmmの帯状 の試験片を用い、 圧延方向に平行な向きに磁場を加えたときの圧延方向の歪み量 を測定した。  Magnetostrictive characteristics are as follows: Invention Example 9-: single crystal /? Phase: For L0 and Comparative Example 5, as shown in FIG. 1, a test piece having a size of 5 mm × 5 bandages × 5 mm was cut out, and the (1 10) plane A strain gauge 2 was attached to the sample, and a magnetic field H having a strength of 30 A / m was applied in the [001] direction to measure the amount of strain. In Invention Examples 11, 12 and Comparative Example 5, which have a two-phase structure of the / 3 phase and the second phase (that is, the 7 phase and / or 7 'phase), a 30 minxl0minx lmm strip-shaped specimen was used in the rolling direction. The amount of strain in the rolling direction when a magnetic field was applied in a parallel direction was measured.

なお形状記憶特性の回復率 (%) は、 表 2と同様に下記の (1)式で算出される 値であり、 磁歪特性 (%) は下記の (2)式で算出される値であり、 冷間圧延率 (%) は下記の (3)式で算出される値である。 '  The recovery rate (%) of the shape memory characteristic is a value calculated by the following equation (1), as in Table 2, and the magnetostrictive property (%) is a value calculated by the following equation (2). The cold rolling reduction (%) is a value calculated by the following equation (3). '

形状記憶特性の回復率 (%)  Recovery rate of shape memory characteristics (%)

= 100 X { (ε d - ε r ) / ε ά } · · · (1) ε d :変形させた後の表面歪み = 100 X {(ε dr ) / ε ά } · · (1) ε d : surface strain after deformation

ε r :回復させた時の表面歪み  ε r: Surface distortion when recovered

磁歪特性 (%) = 100 X { (L2 -Li ) /Lx } · · · (2)Magnetostrictive property (%) = 100 X {(L 2 -Li) / Lx} · · · · (2)

Li :磁場印加前の長さ (mm) Li: Length before applying magnetic field (mm)

L2 :磁場印加後の長さ (mm) L 2 : Length after applying magnetic field (mm)

冷間圧延率 (%) = 100 X { (t! - t 2 ) /t! } · · · (3) t ι :冷間圧延前の厚さ (mm) t 2 :冷間圧延後の厚さ (mm) Cold rolling reduction (%) = 100 X {(t!-T2) / t! } · · · (3) t ι: Thickness before cold rolling (mm) t 2: Thickness after cold rolling (mm)

表 4から明らかなように、 発明例 7〜12と比較例 4〜5を比べると、 発明例の 方が、 形状記憶特性の回復率, 磁歪特性および冷間圧延率に優れた形状記憶合金 を得ることができた。 また発明例 7〜: L2のうち、 単結晶^相の単相組織 (発明例 9, 10) や^相と第 2相との 2相組織 (発明例 11, 12) にすることによって、 多 結晶 ^相の単相組織 (発明例 7 , 8 ) に比べて、 形状記憶特性の回復率, 磁歪特 性および冷間圧延率が一層優れた強磁性形状記憶合金を得ることができた。 また、 特に加工性能に優れた (すなわち冷間圧延率の高い) 発明例 12や、 形状 記憶特性の回復率および磁歪特性に優れた発明例 11のように、 添加元素の種類と 添加量を適切に選択することによって、 目的や用途に応じた性能を有する強磁性 形状記憶合金を得ることが可能である。 As is clear from Table 4, when Examples 7 to 12 and Comparative Examples 4 to 5 are compared, the invention example shows a shape memory alloy that is more excellent in the recovery rate of the shape memory property, the magnetostriction property and the cold rolling rate. I got it. Inventive Example 7-: Of the L2s, a single-crystal ^ phase single-phase structure (Inventive Examples 9 and 10) and a two-phase structure of ^ phase and second phase (Inventive Examples 11 and 12) make Compared with the single-phase structure of the crystalline ^ phase (Inventive Examples 7 and 8), a ferromagnetic shape memory alloy having more excellent shape memory recovery rate, magnetostriction property and cold rolling rate could be obtained. In addition, as shown in Invention Example 12 which is particularly excellent in processing performance (that is, high in cold rolling ratio) and Invention Example 11 which is excellent in recovery rate of shape memory characteristics and magnetostriction characteristics, the type and amount of the added element are appropriate. It is possible to obtain a ferromagnetic shape memory alloy having the performance according to the purpose and application by selecting the above.

Figure imgf000020_0001
Figure imgf000020_0001

組 成 (mass%) - 組織 7相の Composition (mass%)-organization of 7 phases

M  M

Co Ni Al Fe Mn Ga In Si B Cr (体積 発明例 1 37.5 33.5 29 一 ― ― ― ― 一 ― 多結晶^相 ―  Co Ni Al Fe Mn Ga In Si B Cr (Volume Inventive Example 1 37.5 33.5 29 One----One-Polycrystalline ^ phase-

発明例 2 18 37 25 20 0.003 多結晶 /3相 ― Invention Example 2 18 37 25 20 0.003 Polycrystalline / 3-phase ―

発明例 3 35 34 28 3 単結晶 相 Invention Example 3 35 34 28 3 Single crystal phase

発明例 4 50 20 22 5 3 単結晶 相 Invention Example 4 50 20 22 5 3 Single crystal phase

発明例 5 39 30.5 26 4.5 0.001 /3相 +ァ相 10 Invention example 5 39 30.5 26 4.5 0.001 / 3 phase + α phase 10

発明例 6 26 41 23 5 5 /3相 + 7相 40 Invention example 6 26 41 23 5 5/3 phase + 7 phase 40

比較例 1 4 59 37 多結晶3相 Comparative Example 1 4 59 37 Polycrystalline three phase

比較例 2 54 4 .. 42 単結晶 相 Comparative Example 2 54 4 .. 42 Single crystal phase

比較例 3 60 26 4 5 5 相 +7相 80 Comparative Example 3 60 26 4 5 5 phase +7 phase 80

;; 状 §ΰ憶特性 歪特性 冷間 fl:延 発明例 1 Δ Δ X 発明例 2 Δ △ Δ 発明例 3 ◎ ◎ Δ 発明例 4 ◎ ◎ Δ 発明例 5 ◎ ◎ 〇 発明例 6 〇 〇 ◎ 比較例 1 Δ X X 比較例 2 X X X 比較例 3 X X ◎ ; Ϋ́ 特性 ΰ : fl fl fl fl;;;;;;;;;;;;;;;;;;;;; 例; 例 例 例 例 例 例 例 例 例 例 例 例 例 例 例 例 例 例 例 例 例 例 例Comparative Example 1 Δ XX Comparative Example 2 XXX Comparative Example 3 XX ◎

形状記憶特性 ◎:回復 80%以上 Shape memory characteristics ◎: Recovery 80 % or more

〇:回復 § 50%以上、 80%本満 △:回復 20%以上、 50% 満 X:回復幸 20%未満 磁歪特性 ©: 0. 2 %以上  〇: Recovery § 50% or more, full 80% △: Recovery 20% or more, full 50% X: Recovery less than 20% Magnetostrictive properties ©: 0.2% or more

Ο: 0. 1 %以上、 0. 2 %禾満 △: 0. 01%以上、 0. 1 %耒満 X: 0. 01%未満  Ο: 0.1% or more, 0.2% or less △: 0.01% or more, 0.1% or less X: less than 0.01%

冷間圧延率 50%以上  Cold rolling rate 50% or more

30%以上、 δ0%丰満 3 0% or more, δ0% 丰 full

5%以上、 30%*満

Figure imgf000021_0001
5%未満 5% or more, 30% * full
Figure imgf000021_0001
Less than 5%

Figure imgf000022_0001
Figure imgf000022_0001

CO  CO

組織 第 2相の  Organization Phase 2

体精 率  Physical fitness

Co Ga Ni Fe Mn In Si B Cr (体積  Co Ga Ni Fe Mn In Si B Cr (Volume

発明例 7 ― 35 ― ― 一 ― ― ― ― 多結晶 jS相 一 Invention Example 7-35--One----Polycrystalline jS phase One

発明例 8 30 + 20 0. 003 多結晶 /3相 ― Invention Example 8 30 + 20 0.003 Polycrystalline / 3-phase ―

発明例 9 32. 5 単結晶 相 Invention Example 9 32.5 Single crystal phase

発明例 10 50 29 5 3 単結晶^相 Invention Example 10 50 29 5 3 Single crystal ^ phase

発明例 11 26. 5 4. 5 0. 001 ;8相 +第 2相 10 Invention Example 11 26.5.4.50 0.001; 8 phase + 2nd phase 10

発明例 12 24 5 5 ;3相 +第 2相 40 Invention Example 12 24 5 5; 3 phase + 2nd phase 40

比較例 4 4 37 59 多結晶 S相 Comparative Example 4 4 37 59 Polycrystalline S phase

比較例 5 60 10 25 5 ; S相 +第 2相 80 Comparative Example 5 60 10 25 5; S phase + second phase 80

形状 S3憶特性 磁歪特性 冷間圧延率 発明例 7 △ Δ X Shape S3 characteristics Magnetostriction characteristics Cold rolling ratio Invention example 7 △ Δ X

n  n

発明例 0 Δ Δ X πα η Invention Example 0 Δ Δ X πα η

発明例 9 ◎ ◎ Δ 発明例 10 (Q) Δ 発明例 11 ◎ ◎ 〇 発明例 12 〇 〇 Invention Example 9 ◎ ◎ Δ Invention Example 10 (Q) Δ Invention Example 11 ◎ ◎ 〇 Invention Example 12 〇

©Ο ©ΔΟΔΧΧ ◎ 比較例 4 Δ X X  © Ο © ΔΟΔΧΧ ◎ Comparative Example 4 Δ X X

回回回回  Times

比較例 5 . X X Comparative Example 5. X X

一、、 ◎ 形状記憶特性 80%以上  1, ◎ Shape memory characteristics 80% or more

50%以上、 80%禾満 20%以上、 50%*満 20%未満 磁歪特性 ®: 0. 2 %以上  50% or more, 80% full 20% or more, 50% * less than 20% Magnetostrictive properties ®: 0.2% or more

Ο: 0. 1 %以上、 0. 2 %丰満 Δ: 0. 01%以上、 0. 1 %朵満 X: 0. 01%未満  Ο: 0.1% or more, 0.2% full Δ: 0.01% or more, 0.1% full X: less than 0.01%

冷間圧延率 50%以上  Cold rolling rate 50% or more

30%以上、 50%禾満 5%以上、 30%余満 5%未満 30% or more, 50% full 5% or more, 30% full 5% or less

産業上の利用可能性 Industrial applicability

本発明によれば、 延性に優れ、 強磁性を有し、 かつマルテンサイ ト変態を生じ る強磁性形状記憶合金を得ることができる。  According to the present invention, it is possible to obtain a ferromagnetic shape memory alloy having excellent ductility, having ferromagnetism, and causing martensite transformation.

Claims

請 求 の 範 囲 The scope of the claims 1 . Coを 5 ~70原子%、 Niを 5〜70原子%、 Alを 5〜50原子%含有し、 残部が 不可避的不純物からなる組成と、 B 2構造の /3相からなる単相組織または y相と B 2構造の ^相からなる 2相組織とを有することを特徴とする強磁性形状記憶合 金。 1. A composition consisting of 5 to 70 atomic% of Co, 5 to 70 atomic% of Ni, and 5 to 50 atomic% of Al, with the balance consisting of unavoidable impurities and a single-phase structure consisting of / 3 phase of B2 structure Or a ferromagnetic shape memory alloy having a two-phase structure composed of a y phase and a ^ phase having a B 2 structure. 2 . Coを 35〜65原子%、 Gaを 20〜35原子%含有し、 残部が Niおよび不可避的不 純物からなる組成と、 B 2構造の ^相からなる単相組織または B 2構造の ;8相と f c c構造の第 2相からなる 2相組織とを有することを特徴とする強磁性形状記 憶合金。  2. A composition containing 35 to 65 atomic% of Co and 20 to 35 atomic% of Ga, with the balance consisting of Ni and unavoidable impurities, and a single-phase structure consisting of ^ phase of B 2 structure or B 2 structure A ferromagnetic shape memory alloy characterized by having a two-phase structure composed of eight phases and a second phase having an fcc structure. 3 . 前記組成に加えて、 Feを 0. 001〜30原子%および Zまたは Mnを 0. 001〜30 原子%含有することを特徴とする請求項 1または 2に記載の強磁性形状記憶合金 c 3. The ferromagnetic shape memory alloy according to claim 1 or 2, further comprising 0.001 to 30 atomic% of Fe and 0.001 to 30 atomic% of Z or Mn in addition to the composition. 4 . 前記組成に加えて、 Ga、 Inおよび Siのうちの 1種を 0. 001〜50原子%また は 2種以上を合計 0. 001〜50原子%含有することを特徵とする請求項 1または 3 に記載の強磁性形状記憶合金。 4. In addition to the above composition, one of Ga, In, and Si is contained in an amount of 0.001 to 50 atomic% or a total of two or more of 0.001 to 50 atomic%. Or a ferromagnetic shape memory alloy according to item 3. 5 . 前記組成に加えて、 Inおよび Siのうちの 1種を 0. 001〜50原子%または2 種を合計 0. 001〜50原子%含有することを特徴とする請求項 2または 3に記載の 強磁性形状記憶合金。  5. In addition to the above composition, 0.001 to 50 at% of one of In and Si or 0.001 to 50 at% of two in total is contained. Ferromagnetic shape memory alloy. 6 . 前記組成に加えて、 Bを 0. 0005〜0. 01原子%、 Mgを 0. 0005〜0. 01原子%、 Cを 0. 0005-0. 01原子%および Pを 0. 0005〜0. 01原子%のうちの 1種または 2種 以上含有することを特徴とする請求項 1、 2、 3、 4または 5に記載の強磁性形 状記憶合金。  6. In addition to the above composition, B is 0.0005-0.01 atomic%, Mg is 0.0005-0.01 atomic%, C is 0.0005-0.01 atomic%, and P is 0.0005- 6. The ferromagnetic shape memory alloy according to claim 1, wherein the ferromagnetic shape memory alloy contains one or more of 0.01 atomic%. 7 . 前記組成に加えて、 Pt、 Pd、 Au、 Ag、 Nb、 V、 Ti、 Cr、 Zr、 Cu、 Wおよび Moのうちの 1種を 0. 001〜: 10原子%または 2種以上を合計 0. 00:!〜 10原子%含有 することを特徴とする請求項 1、 2、 3、 4、 5または 6に記載の強磁性形状記 憶合金。 7. In addition to the above composition, one of Pt, Pd, Au, Ag, Nb, V, Ti, Cr, Zr, Cu, W and Mo is 0.001 ~: 10 atomic% or two or more Total 0.00 :! The ferromagnetic shape description according to claim 1, 2, 3, 4, 5, or 6, wherein the ferromagnetic shape is contained. Alloy. 8 . 前記単相組織が単結晶であることを特徴とする請求項 1、 2、 3、 4また は 5に記載の強磁性形状記憶合金。  8. The ferromagnetic shape memory alloy according to claim 1, wherein said single phase structure is a single crystal. 9 . 前記 2相組織の γ相の体積分率が 0. 01〜80体積%の範囲を満足することを 特徴とする請求項 1、 3、 4、 6または 7に記載の強磁性形伏記憶合金。  9. The ferromagnetic shape memory according to claim 1, 3, 4, 6, or 7, wherein a volume fraction of the γ phase in the two-phase structure satisfies a range of 0.01 to 80% by volume. alloy. 10.. 前記 2相組織の前記第 2相が、 A 1構造の y相および/または L 1 2 構造 のァ' 相および/または h c p構造の ε— C。 相であることを特徴とする請求項 2、 3、 5、 6または 7に記載の強磁性形状記憶合金。 10 .. The second phase of the dual phase structure is, A 1 of the y phase and / or L 1 2 Structure Structure § 'phase and / or the hcp structure .epsilon. C. The ferromagnetic shape memory alloy according to claim 2, 3, 5, 6, or 7, wherein the ferromagnetic shape memory alloy is a phase. 11. 前記 2相組織の前記第 2相の体積分率が 0. 01〜80体積%の範囲を満足する ことを特徴とする請求項 2、 3、 5、 6、 7または 10に記載の強磁性形状記憶合 金。  11. The strength according to claim 2, wherein the volume fraction of the second phase in the two-phase structure satisfies the range of 0.01 to 80% by volume. Magnetic shape memory alloy.
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WO2007001009A1 (en) * 2005-06-27 2007-01-04 Japan Science And Technology Agency Ferromagnetic shape memory alloy and its use
ITMI20110750A1 (en) * 2011-05-04 2012-11-05 Legor Group S P A PLATINUM-COBALT ALLOYS WITH IMPROVED HARDNESS
CN102918673A (en) * 2010-05-28 2013-02-06 Eto电磁有限责任公司 Method for producing a monocrystalline body from a magnetic shape memory alloy
CN115233076A (en) * 2022-07-29 2022-10-25 西北工业大学 A kind of CoNiAl magnetron memory type eutectic medium entropy alloy and preparation method thereof

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JPH04163817A (en) * 1990-10-26 1992-06-09 Furukawa Electric Co Ltd:The Magnetic and temperature switching mechanism

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JPH03219037A (en) * 1989-10-03 1991-09-26 Taiji Nishizawa Ni-based shape memory alloy and its manufacturing method
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* Cited by examiner, † Cited by third party
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WO2007001009A1 (en) * 2005-06-27 2007-01-04 Japan Science And Technology Agency Ferromagnetic shape memory alloy and its use
US8016952B2 (en) 2005-06-27 2011-09-13 Japan Science And Technology Agency Ferromagnetic shape memory alloy and its use
CN102918673A (en) * 2010-05-28 2013-02-06 Eto电磁有限责任公司 Method for producing a monocrystalline body from a magnetic shape memory alloy
CN102918673B (en) * 2010-05-28 2015-04-29 Eto电磁有限责任公司 Method for producing single crystals from MSM-alloys
ITMI20110750A1 (en) * 2011-05-04 2012-11-05 Legor Group S P A PLATINUM-COBALT ALLOYS WITH IMPROVED HARDNESS
CN115233076A (en) * 2022-07-29 2022-10-25 西北工业大学 A kind of CoNiAl magnetron memory type eutectic medium entropy alloy and preparation method thereof
CN115233076B (en) * 2022-07-29 2023-08-18 西北工业大学 CoNiAl magnetic control memory type eutectic medium entropy alloy and preparation method thereof

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