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WO2002009148A3 - Systeme d'emission de rayonnements integre et son procede de fabrication - Google Patents

Systeme d'emission de rayonnements integre et son procede de fabrication Download PDF

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Publication number
WO2002009148A3
WO2002009148A3 PCT/US2001/022543 US0122543W WO0209148A3 WO 2002009148 A3 WO2002009148 A3 WO 2002009148A3 US 0122543 W US0122543 W US 0122543W WO 0209148 A3 WO0209148 A3 WO 0209148A3
Authority
WO
WIPO (PCT)
Prior art keywords
accommodating buffer
buffer layer
layer
high quality
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2001/022543
Other languages
English (en)
Other versions
WO2002009148A2 (fr
Inventor
Barbara M Foley
William Jay Ooms
James E Prendergast
Kurt Eisenbeiser
Jamal Ramdani
Ravindranath Droopad
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Priority to AU2001276964A priority Critical patent/AU2001276964A1/en
Publication of WO2002009148A2 publication Critical patent/WO2002009148A2/fr
Anticipated expiration legal-status Critical
Publication of WO2002009148A3 publication Critical patent/WO2002009148A3/fr
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/021—Silicon based substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3201—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

Il est possible de faire croître des couches épitaxiales de matériaux semi-conducteurs composites de haute qualité sur de grandes tranches de silicium et faisant croître tout d'abord une couche tampon réceptrice sur une tranche de silicium. Cette couche tampon réceptrice est une couche d'oxyde monocristallin séparée de la tranche de silicium par une couche d'interface amorphe de silice. Cette couche d'interface amorphe dissipe les contraintes et permet la croissance d'une couche tampon réceptrice d'oxyde monocristallin. Toute inadéquation de grille entre la couche tampon réceptrice et le substrat de silicium est compensée par la couche d'interface amorphe. Il est possible de créer des systèmes de rayonnement, dont des sources de rayonnement telles que des diodes électroluminescentes ou des lasers et des guides d'onde dans le matériau semi-conducteur composite épitaxial de haute qualité et au-dessus des couches d'oxyde.
PCT/US2001/022543 2000-07-24 2001-07-18 Systeme d'emission de rayonnements integre et son procede de fabrication Ceased WO2002009148A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2001276964A AU2001276964A1 (en) 2000-07-24 2001-07-18 Integrated radiation emitting system and process for fabricating same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US62469800A 2000-07-24 2000-07-24
US09/624,698 2000-07-24

Publications (2)

Publication Number Publication Date
WO2002009148A2 WO2002009148A2 (fr) 2002-01-31
WO2002009148A3 true WO2002009148A3 (fr) 2003-07-31

Family

ID=24502979

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/022543 Ceased WO2002009148A2 (fr) 2000-07-24 2001-07-18 Systeme d'emission de rayonnements integre et son procede de fabrication

Country Status (2)

Country Link
AU (1) AU2001276964A1 (fr)
WO (1) WO2002009148A2 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010118529A1 (fr) * 2009-04-17 2010-10-21 Arise Technologies Corporation Structure de base pour dispositifs a semi-conducteur iii-v sur des substrats de groupe iv et son procédé de fabrication
CN114203838B (zh) * 2021-12-10 2024-03-29 中国电子科技集团公司第四十四研究所 一种集成侧向探测器的超辐射发光二极管芯片及制备方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62245205A (ja) * 1986-04-17 1987-10-26 Nec Corp 薄膜光導波路およびその作製方法
US5225031A (en) * 1991-04-10 1993-07-06 Martin Marietta Energy Systems, Inc. Process for depositing an oxide epitaxially onto a silicon substrate and structures prepared with the process
EP0600658A2 (fr) * 1992-12-02 1994-06-08 Xerox Corporation Couche tampon d'oxyde de magnésium sur des semi-conducteurs tétrahédriques
JPH1174502A (ja) * 1997-08-29 1999-03-16 Sony Corp シリコン機能性母体基板および光集積化酸化物装置
GB2335792A (en) * 1998-03-26 1999-09-29 Murata Manufacturing Co Opto-electronic integrated circuit
US6045626A (en) * 1997-07-11 2000-04-04 Tdk Corporation Substrate structures for electronic devices
WO2001059837A1 (fr) * 2000-02-10 2001-08-16 Motorola Inc. Circuit integre
WO2002008806A2 (fr) * 2000-07-21 2002-01-31 Motorola, Inc. Systeme optique monolithique

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62245205A (ja) * 1986-04-17 1987-10-26 Nec Corp 薄膜光導波路およびその作製方法
US5225031A (en) * 1991-04-10 1993-07-06 Martin Marietta Energy Systems, Inc. Process for depositing an oxide epitaxially onto a silicon substrate and structures prepared with the process
EP0600658A2 (fr) * 1992-12-02 1994-06-08 Xerox Corporation Couche tampon d'oxyde de magnésium sur des semi-conducteurs tétrahédriques
US6045626A (en) * 1997-07-11 2000-04-04 Tdk Corporation Substrate structures for electronic devices
JPH1174502A (ja) * 1997-08-29 1999-03-16 Sony Corp シリコン機能性母体基板および光集積化酸化物装置
US6100578A (en) * 1997-08-29 2000-08-08 Sony Corporation Silicon-based functional matrix substrate and optical integrated oxide device
GB2335792A (en) * 1998-03-26 1999-09-29 Murata Manufacturing Co Opto-electronic integrated circuit
WO2001059837A1 (fr) * 2000-02-10 2001-08-16 Motorola Inc. Circuit integre
WO2002008806A2 (fr) * 2000-07-21 2002-01-31 Motorola, Inc. Systeme optique monolithique

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
"EPITAXIAL 3D STRUCTURE USING MIXED SPINELS", IBM TECHNICAL DISCLOSURE BULLETIN, IBM CORP. NEW YORK, US, vol. 30, no. 3, August 1987 (1987-08-01), pages 1271, XP000952090, ISSN: 0018-8689 *
"INTEGRATION OF GAAS ON SI USING A SPINEL BUFFER LAYER", IBM TECHNICAL DISCLOSURE BULLETIN, IBM CORP. NEW YORK, US, vol. 30, no. 6, November 1987 (1987-11-01), pages 365, XP000952091, ISSN: 0018-8689 *
DATABASE WPI Section Ch Week 198748, Derwent World Patents Index; Class L03, AN 1987-339242, XP002226745 *
YU Z ET AL: "Epitaxial oxide thin films on Si(001)", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY: PART B, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 18, no. 4, July 2000 (2000-07-01), pages 2139 - 2145, XP002172595, ISSN: 0734-211X *

Also Published As

Publication number Publication date
AU2001276964A1 (en) 2002-02-05
WO2002009148A2 (fr) 2002-01-31

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