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WO2002007925A1 - Procede et dispositif permettant d'eliminer des particules de tres petite taille d'une surface au moyen d'une thermophorese de maniere a empecher la redeposition des particules - Google Patents

Procede et dispositif permettant d'eliminer des particules de tres petite taille d'une surface au moyen d'une thermophorese de maniere a empecher la redeposition des particules Download PDF

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Publication number
WO2002007925A1
WO2002007925A1 PCT/US2001/021112 US0121112W WO0207925A1 WO 2002007925 A1 WO2002007925 A1 WO 2002007925A1 US 0121112 W US0121112 W US 0121112W WO 0207925 A1 WO0207925 A1 WO 0207925A1
Authority
WO
WIPO (PCT)
Prior art keywords
particle
sample
transfer medium
energy
redepositing
Prior art date
Application number
PCT/US2001/021112
Other languages
English (en)
Inventor
Susan D. Allen
Original Assignee
Florida State University Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/909,992 external-priority patent/US6805751B2/en
Priority claimed from US09/909,993 external-priority patent/US20020029956A1/en
Application filed by Florida State University Research Foundation filed Critical Florida State University Research Foundation
Priority to AU2001282861A priority Critical patent/AU2001282861A1/en
Publication of WO2002007925A1 publication Critical patent/WO2002007925A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • B08B7/0042—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by laser
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting

Definitions

  • the present invention relates to a method and apparatus for removing minute particles from a surface. More particularly, the invention relates to a method and apparatus for removing minute particles from a surface using thermophoresis to prevent particle redeposition.
  • Particle contamination of surfaces is a concern in many areas of technology. Two areas where such contamination can be a very significant problem are optics, particularly those with critical optical surfaces, and electronic device fabrication.
  • the effect of contaminants on critical optical surfaces can lead to increased optical absorption and a decreased laser damage threshold.
  • minute particles contaminate optical surfaces, they can serve as sinks for optical power incident on the optical surfaces and thus produce localized heating and possible damage.
  • Large telescope mirrors, and space optics are other applications which require highly decontaminated critical optical surfaces.
  • particle contamination is an important factor m the manufacture of high density integrated circuits. Even in relatively conventional technology using micron or larger circuit patterns, submicron size particle contamination can be a problem.
  • particle contamination is even more of a problem.
  • particles serve as "killer defects" for only the device that is particle contaminated.
  • the term “device” includes electronic devices, including masks /reticles, optical devices, medical devices, and other devices where particle removal could be advantageous.
  • a particle contaminated mask/reticle prints every device with a defect.
  • materials for a protective pellicle for die mask are not available, making particle removal techniques an essential technology in the future.
  • Contaminant particles larger than roughly 10% of the pattern size can create damage, such as pinholes, which interfere with fabrication processes (such as etching, deposition and the like), and defects of that size are a sufficiently significant proportion of the overall pattern size to result in rejected devices and reduced yield.
  • the minimum particle size which must be removed in order to achieve adequate yield in a one Megabit chip (which has a pattern size of one micron) is about 0.1 microns.
  • Filtration of air and liquid
  • particle detection of dirt
  • contaminant removal are known techniques used in contamination control technology in order to address the problems outlined above.
  • semiconductor fabrication is often conducted in clean rooms in which the air is highly filtered, the rooms are positively pressurized, and the personnel allowed into the room are decontaminated and specially garbed before entry is allowed.
  • the manufactured devices can become contaminated, not only by contaminants carried in the air, but also by contaminants created by the processes used to fabricate the devices.
  • Removal techniques for contaminants should provide sufficient driving force for removal but without destroying the substrate. Moreover, acceptable removal techniques should provide a rninimum level of cleanliness in a reliable fashion. As the particle size decreases, the particle weight becomes less significant as compared to other adhesive forces binding the particle to the surface which it contaminates. Removal of such small particles can potentially damage the substrate. In general, it has been found that submicron particles are the most difficult to remove. Many of the processes developed to clean integrated circuits, such as ultrasonic agitation, are not effective for micron and submicron particles and indeed, sometimes add contaminants to the substrate.
  • Patent No. 4,987,286 discloses a method and apparatus for removing minute particles from a surface to which they are adhered using laser technology, and further teaches the use of an energy transfer medium to effect efficient laser assisted particle removal (LAPR).
  • LAPR laser assisted particle removal
  • a condensed liquid or solid energy transfer medium 23 such as water, is interposed under and around a contaminant particle 22 to be removed from a substrate
  • the medium 23 is irradiated using laser energy 25 at a wavelength which is strongly absorbed by the medium 23 causing explosive evaporation of the medium 23 with sufficient force to remove the particle 22 from the surface of the substrate.
  • Another particle removal technique has been to direct the laser energy into the substrate.
  • the laser heated substrate then transfers energy into the energy transfer medium via conduction causing explosive evaporation sufficient to remove the particle from the surface of the substrate.
  • the laser energy can also be directed into the particle(s) to be removed.
  • Both direct absorption by the energy transfer medium, and substrate and/or particle(s) absorption with subsequent heating of the energy transfer medium can result in efficient LAPR.
  • advances in technology have decreased the critical dimensions of various devices, such as, for example, magnetic hard drives, semiconductor devices, masks to make semiconductor devices, etc., and have also increased the surface quality specifications for devices such as large telescope mirrors, space optics, high power laser optics, etc. Therefore, the ability to remove particulate contamination in a noncontact clean fashion becomes ever more important.
  • An object of the invention is to solve at least the above problems and/or disadvantages and to provide at least the advantages described hereinafter.
  • the invention provides a novel method and apparatus for removing minute (for example, micrometer and nanometer size) particles from a surface, and preventing their redeposition.
  • minute particles for example, micrometer and nanometer size
  • LAPR laser assisted particle removal
  • Figure 1 is a diagram schematically illustrating a contaminated surface with adhered particles illustrating the practice of laser assisted particle removal
  • Figure 2A is a diagram schematically illustrating a surface bearing a contaminant particle prior to introduction of an energy transfer medium thereon;
  • Figure 2B is a diagram schematically illustrating the introduction of laser energy onto the contaminant particle
  • Figure 2C is a diagram schematically illustrating the removal of the contaminant particle from the surface
  • FIGS. 3A-3C schematically illustrate three exemplary ways in which the invention can be implemented
  • Figure 4 is a schematic diagram of a system for performing the methods according to the present invention.
  • Figures 5-6 are schematic drawings of a particle gun according to the invention.
  • Figure 1 shows, in cross-section, a portion of a substrate 20 bearing contaminant particles 22 which are adhered to a surface 21.
  • the particles 22 are bound to the surface 21 by any of a number of forces.
  • the particles are deposited usually by a complex process which may include diffusion, sedimentation, inertia, and electrical or electrostatic attraction.
  • gravity is a minor source of adhesion
  • other sources of greater significance are Van der Waals forces, electrostatic forces, capillary forces, and the like.
  • Adhesion forces and the factors necessary for dislodging particles held by such forces will be considered in greater detail below.
  • the adhesion force per particle contact surface area increases rapidly, and removal of such particles becomes a rather significant problem.
  • ETM energy transfer medium
  • layer 23 occupies interstices 24 formed between the adhered particles 22 and the surface 21.
  • Figures 2A-2B illustrates the introduction of an ETM onto a surface bearing a contaminant particle.
  • the energy is impinged upon the surface to be cleaned.
  • the energy may be targeted into, that is, at a wavelength which is absorbed by, the particle, the substrate, or the ETM, or some combination thereof.
  • a laser beam 25 is directed at the surface 21, which carries the contaminant particles, and the interposed layer 24.
  • a quantity of energy is absorbed in the ETM, either direcdy or from the laser heated particle or substrate, which is sufficient to cause explosive evaporation on the medium.
  • the quantity of material interposed under and around the particle is such that, when explosive evaporation occurs, the particle is driven from the surface by the force of the explosion, as shown in Fig. 2C.
  • the laser energy incident on the surface is converted by the ETM from potential to kinetic energy, and is transferred to the particle, driving it from the surface to which it had been adhered.
  • thermophoresis to prevent the redeposition of dislodged particles onto die surface of a sample or substrate. It has been known that a temperature gradient in a gas causes small particles suspended in
  • thermophoresis "the gas to migrate in the direction of decreasing temperature. This phenomenon is called thermophoresis.
  • the methods and apparatus according to the invention combine thermophoresis with laser assisted particle removal (LAPR) to remove difficult to remove particles from a surface of a sample and to prevent their redeposition.
  • LAPR laser assisted particle removal
  • Thermophoresis was discovered in the steel industry in 1910.
  • a thermal gradient produces a net force on a particle small enough to exhibit Brownian motion toward the colder side of the gradient. This force exists because the hotter gaseous molecules near the surface that is being protected have more kinetic energy to impart to the small particle, tending to force it toward the colder part of the gas. It has been demonstrated by Lenny Klebanoff, Dan Radar, and Daniel Dedrick at
  • a temperature gradient of approximately 15K/cm will prevent approximately 0.2 ⁇ m polystyrene particles flowing from a "showerhead" from depositing on a mask surface.
  • This temperature gradient can be produced, for example, by cooling a plate above the surface to be protected, by heating the surface to be protected, or by some combination thereof. Pressures as low as approximately 30 mT can be utilized to create a thermophoretic force.
  • thermophoresis there is no thermophoresis in vacuum, but there are many processes with particle surface contamination problems that operate in a gaseous environment at atmospheric, low or high pressure.
  • the readily executable redeposition prevention process for use with LAPR according to the invention in atmosphere would be advantageous for many processes, including but not limited to cleaning semiconductor wafers and masks, cleaning high resolution optics such as large telescope mirrors, cleaning critical surfaces in space, cleaning high power laser optics, etc.
  • FIGS 3A-3C schematically illustrate three exemplary ways in which the invention can be implemented.
  • a temperature control unit 98 is provided which controls the temperature of a plate 98A on which a sample or substrate 20 is placed.
  • a plate 99A and corresponding temperature control unit 99 are disposed above, or at a predetermined distance D from a sample or substrate 20.
  • Fig. 3C illustrates an embodiment, which is a combination of the embodiments of Figs. 3A-3B.
  • temperature control units such as those shown in Figures 3A-3B, can also be used to create a "particle gun". That is, the temperature control units could be manipulated to control the velocity and direction of particle flow. The velocity of the particles would be dependent on the temperature gradient as well as d e size of the respective particles being manipulated. Such a particle gun concept could be used to accelerate particles toward a desired target.
  • Fig. 4 shows an apparatus configured for practice according to one embodiment of the invention.
  • the apparatus includes a chamber 50.
  • a substrate 54 to be cleaned is mounted on a support (not shown) in the chamber 50.
  • the substrate 54 has a surface 55 which contains contaminant particles (not shown in the scale of Fig. 4) which are to be removed.
  • a cooling source 56 is coupled by conduit 57 to the substrate 54.
  • the temperature of the substrate 54 may be reduced to enhance water absorption to the surface 55.
  • An ETM can be applied as a liquid or gas.
  • a liquid ETM for example, water or an alcohol/water mixture
  • a liquid source 60 is provided and is coupled by a dosing tube 61 to the surface 55 of the substrate 54. Liquid supplied by source 60 travels through the dosing tube 61 and is applied to the surface 55 at the appropriate temperature to assure adsorption on the surface and in interstices under and around the contaminant particles.
  • the temperature of the substrate 54 can be maintained by the cooling source 56, such that adsorption of surface water occurs while maintaining water in the interstices under and around the contaminant particles and the surface.
  • a plate 99A and a corresponding temperature control unit 99 are provided at a predetermined distance from the substrate 54 to create a temperature gradient according to this embodiment of the invention.
  • a laser source 64 is provided with means 66 for steering a laser beam 65, if necessary. Additional beam guiding means can be provided to guide the laser energy to the substrate despite obstacles.
  • the laser source 64 is energized, and outputs pulses of energy in a beam illustrated at 65 to the surface 55.
  • the sample itself can be moved within the chamber 50 to direct the laser beam to the desired area of the surface 55.
  • the beam 65 is focused on areas of the surface 55 to be cleaned and the laser 64 pulsed to couple adequate energy to the surface 55.
  • the sample 54 is mounted such that particles which are driven from the surface 55 can fall gravity assisted without redepositing on the surface.
  • the temperature control unit 99 creates a temperature gradient that ensures that the particles do not redeposit on the surface of the sample 54.
  • the present invention can also be used to form a particle gun, as mentioned briefly above, such as that shown in Figures 5-6, which would deposit particles onto a target substrate.
  • a particle gun as mentioned briefly above, such as that shown in Figures 5-6, which would deposit particles onto a target substrate.
  • This can be useful in the manufacture of, for example, computer monitors. Particles interposed between a mask and a polymer, during imprinting of a polymer based diode, will create rows of pillars, creating a photonic bandgap material. See “Dusty Lab May Revolutionize LEDs," Photonics Technology World, September 2000, which is hereby incorporated by reference. Fine control of the height and distribution of the pillars allows control of colors emitted by an LED, which are determined by microcavities in the polymer. See id. Instead of manufacturing each color with different light-emitting materials, the entire range of color can be produced with one material by controlling the height and distribution of the pillars. See id.
  • the particle gun 100 in Figure 5 includes a substrate 120, and an energy transfer medium 123 with particles 122 deposited thereon.
  • Laser energy 125 provided by a laser
  • the substrate/ETM combination (not shown) is directed at the substrate/ETM combination.
  • the particles 122 are accelerated from the surface of the substrate 120 towards a target substrate 140, upon which the particles 122 adhere as shown in Figure 6.
  • the temperatures of the substrate 120 and the target substrate 140 can be altered to affect particle deposition density and particle deposition distribution patterns.
  • the substrate 120 can be cold relative to a warm target substrate 140, preventing ETM redeposition on the target substrate 140 resulting in dry particle deposition.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

L'invention concerne un procédé et un dispositif permettant d'éliminer des particules (22) de très petite taille de la surface (21) d'un échantillon (20) et empêchant la redéposition des particules (22) sur cette surface (21). Par la combinaison de la thermophorèse avec l'élimination de particules par laser, ces procédés et ce dispositif permettent d'éliminer les particules de très petite taille (p. ex. de dimensions micrométriques ou nanométriques) et d'assurer qu'elles ne se redéposent pas.
PCT/US2001/021112 2000-07-24 2001-07-24 Procede et dispositif permettant d'eliminer des particules de tres petite taille d'une surface au moyen d'une thermophorese de maniere a empecher la redeposition des particules WO2002007925A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2001282861A AU2001282861A1 (en) 2000-07-24 2001-07-24 Method and apparatus for removal of minute particles from a surface using thermophoresis to prevent particle redeposition

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US22041800P 2000-07-24 2000-07-24
US60/220,418 2000-07-24
US09/909,992 US6805751B2 (en) 2000-07-24 2001-07-23 Method and apparatus for removal of minute particles from a surface using thermophoresis to prevent particle redeposition
US09/909,993 2001-07-23
US09/909,992 2001-07-23
US09/909,993 US20020029956A1 (en) 2000-07-24 2001-07-23 Method and apparatus for removing minute particles from a surface

Publications (1)

Publication Number Publication Date
WO2002007925A1 true WO2002007925A1 (fr) 2002-01-31

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PCT/US2001/021112 WO2002007925A1 (fr) 2000-07-24 2001-07-24 Procede et dispositif permettant d'eliminer des particules de tres petite taille d'une surface au moyen d'une thermophorese de maniere a empecher la redeposition des particules
PCT/US2001/021113 WO2002007926A1 (fr) 2000-07-24 2001-07-24 Procede et dispositif permettant l'elimination de particules minuscules sur une surface

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005116758A2 (fr) 2004-05-28 2005-12-08 Koninklijke Philips Electronics N.V. Nettoyage d'un substrat de masque
EP2586798A2 (fr) 2005-07-25 2013-05-01 Emergent Product Development Seattle, LLC Réduction des lymphocytes B au moyen de molécules de liaison spécifique de CD37 et CD20
CN110344017A (zh) * 2018-04-03 2019-10-18 程实平 用光学厚度监测系统管理涂层均匀性的方法

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* Cited by examiner, † Cited by third party
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EP1411388B1 (fr) * 2002-09-12 2006-12-20 ASML Netherlands B.V. Procédé pour nettoyer par enlèvement de particules présentes sur des surfaces, appareil de nettoyage et appareil de projection lithographique

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US4987286A (en) * 1989-10-30 1991-01-22 University Of Iowa Research Foundation Method and apparatus for removing minute particles from a surface
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US5151135A (en) * 1989-09-15 1992-09-29 Amoco Corporation Method for cleaning surfaces using UV lasers
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US5800625A (en) * 1996-07-26 1998-09-01 Cauldron Limited Partnership Removal of material by radiation applied at an oblique angle
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US5950071A (en) * 1995-11-17 1999-09-07 Lightforce Technology, Inc. Detachment and removal of microscopic surface contaminants using a pulsed detach light
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US6048588A (en) * 1988-07-08 2000-04-11 Cauldron Limited Partnership Method for enhancing chemisorption of material
US6056827A (en) * 1996-02-15 2000-05-02 Japan Nuclear Cycle Development Institute Laser decontamination method
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US5373806A (en) * 1985-05-20 1994-12-20 Applied Materials, Inc. Particulate-free epitaxial process
US4752668A (en) * 1986-04-28 1988-06-21 Rosenfield Michael G System for laser removal of excess material from a semiconductor wafer
US5821175A (en) * 1988-07-08 1998-10-13 Cauldron Limited Partnership Removal of surface contaminants by irradiation using various methods to achieve desired inert gas flow over treated surface
US5531857A (en) * 1988-07-08 1996-07-02 Cauldron Limited Partnership Removal of surface contaminants by irradiation from a high energy source
US6048588A (en) * 1988-07-08 2000-04-11 Cauldron Limited Partnership Method for enhancing chemisorption of material
US5643472A (en) * 1988-07-08 1997-07-01 Cauldron Limited Partnership Selective removal of material by irradiation
US5151135A (en) * 1989-09-15 1992-09-29 Amoco Corporation Method for cleaning surfaces using UV lasers
US4987286A (en) * 1989-10-30 1991-01-22 University Of Iowa Research Foundation Method and apparatus for removing minute particles from a surface
US5023424A (en) * 1990-01-22 1991-06-11 Tencor Instruments Shock wave particle removal method and apparatus
US5332879A (en) * 1992-12-02 1994-07-26 The Aerospace Corporation Method for removing trace metal contaminants from organic dielectrics
US5637245A (en) * 1995-04-13 1997-06-10 Vernay Laboratories, Inc. Method and apparatus for minimizing degradation of equipment in a laser cleaning technique
US5958268A (en) * 1995-06-07 1999-09-28 Cauldron Limited Partnership Removal of material by polarized radiation
US5950071A (en) * 1995-11-17 1999-09-07 Lightforce Technology, Inc. Detachment and removal of microscopic surface contaminants using a pulsed detach light
US6056827A (en) * 1996-02-15 2000-05-02 Japan Nuclear Cycle Development Institute Laser decontamination method
US5800625A (en) * 1996-07-26 1998-09-01 Cauldron Limited Partnership Removal of material by radiation applied at an oblique angle
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005116758A2 (fr) 2004-05-28 2005-12-08 Koninklijke Philips Electronics N.V. Nettoyage d'un substrat de masque
WO2005116758A3 (fr) * 2004-05-28 2006-10-19 Koninkl Philips Electronics Nv Nettoyage d'un substrat de masque
JP2008501232A (ja) * 2004-05-28 2008-01-17 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ マスク基板のクリーニング
EP2586798A2 (fr) 2005-07-25 2013-05-01 Emergent Product Development Seattle, LLC Réduction des lymphocytes B au moyen de molécules de liaison spécifique de CD37 et CD20
CN110344017A (zh) * 2018-04-03 2019-10-18 程实平 用光学厚度监测系统管理涂层均匀性的方法

Also Published As

Publication number Publication date
AU2001282862A1 (en) 2002-02-05
WO2002007926A8 (fr) 2002-06-20
WO2002007926A1 (fr) 2002-01-31
AU2001282861A1 (en) 2002-02-05

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