[go: up one dir, main page]

WO2002003514A3 - Power and wavelength control of sampled grating distributed bragg reflector lasers - Google Patents

Power and wavelength control of sampled grating distributed bragg reflector lasers Download PDF

Info

Publication number
WO2002003514A3
WO2002003514A3 PCT/US2001/020725 US0120725W WO0203514A3 WO 2002003514 A3 WO2002003514 A3 WO 2002003514A3 US 0120725 W US0120725 W US 0120725W WO 0203514 A3 WO0203514 A3 WO 0203514A3
Authority
WO
WIPO (PCT)
Prior art keywords
power
laser
bragg reflector
distributed bragg
sampled grating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2001/020725
Other languages
French (fr)
Other versions
WO2002003514A2 (en
Inventor
Paul F Crowder
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Agility Communications Inc
Original Assignee
Agility Communications Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agility Communications Inc filed Critical Agility Communications Inc
Priority to AU2001273072A priority Critical patent/AU2001273072A1/en
Publication of WO2002003514A2 publication Critical patent/WO2002003514A2/en
Publication of WO2002003514A3 publication Critical patent/WO2002003514A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06256—Controlling the frequency of the radiation with DBR-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/06808—Stabilisation of laser output parameters by monitoring the electrical laser parameters, e.g. voltage or current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H01S5/0687—Stabilising the frequency of the laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1209—Sampled grating

Landscapes

  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Communication System (AREA)

Abstract

The invention discloses an optical output power and output wavelength control system for use with a sampled grating distributed Bragg reflector (SGDBR) laser. The optical output power and output wavelength control system for use with a sampled grating distributed Bragg reflector (SGDBR) laser comprises a controller for providing current inputs to the laser controlling the optical output power and output wavelength and an external reference receiving an optical output from the laser and providing a reference output to the control, wherein the controller compares the optical output power and output wavelength of the laser to the reference output and locks the optical output power and output wavelength of the laser to the external reference.
PCT/US2001/020725 2000-06-29 2001-06-29 Power and wavelength control of sampled grating distributed bragg reflector lasers Ceased WO2002003514A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2001273072A AU2001273072A1 (en) 2000-06-29 2001-06-29 Power and wavelength control of sampled grating distributed bragg reflector lasers

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US21574200P 2000-06-29 2000-06-29
US21517000P 2000-06-29 2000-06-29
US21573900P 2000-06-29 2000-06-29
US60/215,170 2000-06-29
US60/215,739 2000-06-29
US60/215,742 2000-06-29

Publications (2)

Publication Number Publication Date
WO2002003514A2 WO2002003514A2 (en) 2002-01-10
WO2002003514A3 true WO2002003514A3 (en) 2002-04-18

Family

ID=27396084

Family Applications (2)

Application Number Title Priority Date Filing Date
PCT/US2001/020725 Ceased WO2002003514A2 (en) 2000-06-29 2001-06-29 Power and wavelength control of sampled grating distributed bragg reflector lasers
PCT/US2001/020726 Ceased WO2002003515A2 (en) 2000-06-29 2001-06-29 Gain voltage control of sampled grating distributed bragg reflector lasers

Family Applications After (1)

Application Number Title Priority Date Filing Date
PCT/US2001/020726 Ceased WO2002003515A2 (en) 2000-06-29 2001-06-29 Gain voltage control of sampled grating distributed bragg reflector lasers

Country Status (2)

Country Link
AU (2) AU2001273073A1 (en)
WO (2) WO2002003514A2 (en)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7435660B2 (en) 1998-12-21 2008-10-14 Finisar Corporation Migration enhanced epitaxy fabrication of active regions having quantum wells
US7167495B2 (en) 1998-12-21 2007-01-23 Finisar Corporation Use of GaAs extended barrier layers between active regions containing nitrogen and AlGaAs confining layers
US7257143B2 (en) 1998-12-21 2007-08-14 Finisar Corporation Multicomponent barrier layers in quantum well active regions to enhance confinement and speed
US7408964B2 (en) 2001-12-20 2008-08-05 Finisar Corporation Vertical cavity surface emitting laser including indium and nitrogen in the active region
US7095770B2 (en) 2001-12-20 2006-08-22 Finisar Corporation Vertical cavity surface emitting laser including indium, antimony and nitrogen in the active region
US6922426B2 (en) 2001-12-20 2005-07-26 Finisar Corporation Vertical cavity surface emitting laser including indium in the active region
US20030219917A1 (en) 1998-12-21 2003-11-27 Johnson Ralph H. System and method using migration enhanced epitaxy for flattening active layers and the mechanical stabilization of quantum wells associated with vertical cavity surface emitting lasers
US6975660B2 (en) 2001-12-27 2005-12-13 Finisar Corporation Vertical cavity surface emitting laser including indium and antimony in the active region
US7286585B2 (en) 1998-12-21 2007-10-23 Finisar Corporation Low temperature grown layers with migration enhanced epitaxy adjacent to an InGaAsN(Sb) based active region
US7058112B2 (en) 2001-12-27 2006-06-06 Finisar Corporation Indium free vertical cavity surface emitting laser
US6822995B2 (en) 2002-02-21 2004-11-23 Finisar Corporation GaAs/AI(Ga)As distributed bragg reflector on InP
US7295586B2 (en) 2002-02-21 2007-11-13 Finisar Corporation Carbon doped GaAsSb suitable for use in tunnel junctions of long-wavelength VCSELs
CA2581614A1 (en) 2004-10-01 2006-04-13 Finisar Corporation Vertical cavity surface emitting laser having multiple top-side contacts
US7860137B2 (en) 2004-10-01 2010-12-28 Finisar Corporation Vertical cavity surface emitting laser with undoped top mirror
CN108011294A (en) * 2017-12-30 2018-05-08 武汉理工光科股份有限公司 Pulsed swept light source and production method based on semiconductor tunable laser

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0774684A2 (en) * 1995-11-16 1997-05-21 Matsushita Electric Industrial Co., Ltd. Optical apparatus and method for producing the same
EP0926789A2 (en) * 1997-12-24 1999-06-30 Nortel Networks Corporation A laser module allowing simultaneous wavelength and power control
WO1999040654A1 (en) * 1998-01-21 1999-08-12 Altitun Ab Method of optimizing the operation points of lasers and means for carrying out the method

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4622672A (en) * 1984-01-20 1986-11-11 At&T Bell Laboratories Self-stabilized semiconductor lasers

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0774684A2 (en) * 1995-11-16 1997-05-21 Matsushita Electric Industrial Co., Ltd. Optical apparatus and method for producing the same
EP0926789A2 (en) * 1997-12-24 1999-06-30 Nortel Networks Corporation A laser module allowing simultaneous wavelength and power control
WO1999040654A1 (en) * 1998-01-21 1999-08-12 Altitun Ab Method of optimizing the operation points of lasers and means for carrying out the method

Also Published As

Publication number Publication date
AU2001273073A1 (en) 2002-01-14
WO2002003515A3 (en) 2002-04-18
WO2002003515A2 (en) 2002-01-10
WO2002003514A2 (en) 2002-01-10
AU2001273072A1 (en) 2002-01-14

Similar Documents

Publication Publication Date Title
WO2002003514A3 (en) Power and wavelength control of sampled grating distributed bragg reflector lasers
WO2004038871A3 (en) Grating-stabilized semiconductor laser
WO2006060656A3 (en) Method and device for performing wavelength modulation with a distributed bragg reflector (dbr) laser
CA2189568A1 (en) Optical fibre laser
EP0978911A3 (en) Optical functional devices, their manufacturing method and optical communication system
AU9472298A (en) Tunable fiber fabry-perot surface-emitting lasers
WO2002025783A3 (en) Actively mode-locked fiber laser with controlled chirp output
WO2002037621A3 (en) Tunable controlled laser array
WO2003005512A3 (en) Tunable laser control system
AU2002308685A1 (en) Wavelength selectable, controlled chirp, semiconductor laser
CA2203845A1 (en) Etalon arrangement
WO2001095444A3 (en) High-power sampled grating distributed bragg reflector lasers
CA2194821A1 (en) Rare-earth doped lithium niobate dbr laser
GB8522308D0 (en) Semiconductor lasers
WO2002093695A3 (en) Sampled grating distributed bragg reflector laser controller
WO2003015225A3 (en) Method and system for selecting an output of a dbr array
EP0779689A3 (en) Gain clamped optical amplifier
WO2003044914A8 (en) Multi-wavelength raman fiber laser
WO1997050109A3 (en) Vertical-cavity surface-emitting laser array
EP0660469A3 (en) Method for fabrication of wavelength selective electro-optic grating for DFB/DBR lasers.
WO2004046638A3 (en) Optimizing power for second laser
AU2001247192A1 (en) High power distributed feedback ridge waveguide laser
EP1143582A4 (en) Gain-coupled distributed feedback semiconductor laser
WO2003088438A3 (en) Method for stabilising a distributed-reflector laser source
AU2002345547A1 (en) Wavelength tunable ring lasers

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ CZ DE DE DK DK DM DZ EC EE EE ES FI FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG UZ VN YU ZA ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
AK Designated states

Kind code of ref document: A3

Designated state(s): AE AG AL AM AT AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ CZ DE DE DK DK DM DZ EC EE EE ES FI FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG UZ VN YU ZA ZW

AL Designated countries for regional patents

Kind code of ref document: A3

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GW ML MR NE SN TD TG

REG Reference to national code

Ref country code: DE

Ref legal event code: 8642

122 Ep: pct application non-entry in european phase
NENP Non-entry into the national phase

Ref country code: JP