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WO2002003420A3 - Architectures de radio a circuit integre - Google Patents

Architectures de radio a circuit integre Download PDF

Info

Publication number
WO2002003420A3
WO2002003420A3 PCT/US2001/016730 US0116730W WO0203420A3 WO 2002003420 A3 WO2002003420 A3 WO 2002003420A3 US 0116730 W US0116730 W US 0116730W WO 0203420 A3 WO0203420 A3 WO 0203420A3
Authority
WO
WIPO (PCT)
Prior art keywords
integrated circuit
circuits
fabricated
silicon substrate
circuit radio
Prior art date
Application number
PCT/US2001/016730
Other languages
English (en)
Other versions
WO2002003420A2 (fr
Inventor
Thomas A Freeburg
Gary W Grube
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Priority to AU2001263398A priority Critical patent/AU2001263398A1/en
Publication of WO2002003420A2 publication Critical patent/WO2002003420A2/fr
Publication of WO2002003420A3 publication Critical patent/WO2002003420A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/08—Manufacture or treatment characterised by using material-based technologies using combinations of technologies, e.g. using both Si and SiC technologies or using both Si and Group III-V technologies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0107—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs
    • H10D84/0109—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs the at least one component covered by H10D12/00 or H10D30/00 being a MOS device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H10D88/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/05—Manufacture or treatment characterised by using material-based technologies using Group III-V technology

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Recrystallisation Techniques (AREA)
  • Semiconductor Memories (AREA)

Abstract

L'invention concerne des structures semi-conductrices de radios bidirectionnelles, et des procédés de fabrication de ces structures. La structure intégrée comprend un circuit intégré monolithique unique (401) sur lequel des circuits de traitement, tels qu'une UC (420) ou un processeur de signal numérique (418), sont fabriqués dans une structure substrat en silicium. Par l'utilisation d'une couche intermédiaire, une matière semi-conductrice composée, telle que AsGa, peut être déposée en couches sur le substrat en silicium. Cette matière composée peut alors s'utiliser pour les circuits RF dans la radio. Les circuits RF et les circuits de traitement peuvent ainsi être fabriqués sur un CI unique, ce qui réduit les impératifs de puissance et de taille du dispositif assemblé.
PCT/US2001/016730 2000-06-30 2001-05-21 Architectures de radio a circuit integre WO2002003420A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2001263398A AU2001263398A1 (en) 2000-06-30 2001-05-21 Integrated circuit radio architectures

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US60723900A 2000-06-30 2000-06-30
US09/607,239 2000-06-30

Publications (2)

Publication Number Publication Date
WO2002003420A2 WO2002003420A2 (fr) 2002-01-10
WO2002003420A3 true WO2002003420A3 (fr) 2002-06-06

Family

ID=24431410

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/016730 WO2002003420A2 (fr) 2000-06-30 2001-05-21 Architectures de radio a circuit integre

Country Status (2)

Country Link
AU (1) AU2001263398A1 (fr)
WO (1) WO2002003420A2 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11158575B2 (en) 2018-06-05 2021-10-26 Macom Technology Solutions Holdings, Inc. Parasitic capacitance reduction in GaN-on-silicon devices

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5596205A (en) * 1993-07-12 1997-01-21 Peregrine Semiconductor Corporation High-frequency wireless communication system on a single ultrathin silicon on sapphire chip

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5596205A (en) * 1993-07-12 1997-01-21 Peregrine Semiconductor Corporation High-frequency wireless communication system on a single ultrathin silicon on sapphire chip

Also Published As

Publication number Publication date
WO2002003420A2 (fr) 2002-01-10
AU2001263398A1 (en) 2002-01-14

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