LAYER DEPOSITION ON SUPERCONDUCTOR PARTICLES BY SPUTTERING OR EVAPORATION
BACKGROUND OF THE INVENTION
This is a Continuation-In-Part of U.S. Patent Application No. 09/433,267
filed on November 4, 1999 which is a Continuation-In-Part of U.S. Patent No.
5,998,336 filed on February 26, 1997.
1). Field of the Invention
This invention relates to a method and apparatus for producing a
superconductor property composite.
2). Discussion of Related Art
U.S. Patent No. 5,998,336 describes principles relating to the manufacture
of a superconductor property composite utilizing the proximity effect. A plurality of superconductor particles are formed being of a first material which is
relatively brittle and is selected to be in a superconductive state at a relatively
high temperature, typically above 77K which is the temperature of liquid
nitrogen. A coating layer is formed on each superconductor particle, the coating
layer being of a second material selected to be substantially non-reactive with the first material. The coated particles are then mixed with a third material to form a composite wherein the third material is in proximity to the first material but
separated by the second material. The third material is selected to be relatively
ductile when compared to the first material and to be driven to a
superconductive state by the first material when the first material is in a superconductive state and the third material is in proximity to the first material.
The second material protects the third material from oxidation by the first
material. The second material is selected and is sufficiently thin to allow for the
third material to be driven to the superconductive state by the first material
through the second material.
The need has"arisen to develop a method and apparatus for forming
coating layers on the superconductor particles.
SUMMARY OF THE INVENTION
According to one aspect of the invention a method for producing a
superconductor property composition is provided. A plurality of
superconductor particles are formed, the superconductor particles being of a first
material being relatively brittle and being selected to be in a superconductive state above 10K. Coating particles from a source of coating particles of a second
material are directed to the superconductor particles, thereby at least partially
coating a surface of each superconductor particle with an initial coating layer to
form a plurality of partially coated particles. Each partially coated particle is
then rotated relative to the source, resulting in rotated particles. Coating
particles from the source of coating particles are then directed towards the
rotated particles, thereby further coating the respective surface of each
superconductor particle with a further coating layer to form a plurality of further
coated particles.
The further coated particles may be located in proximity to a third
material to form the composition. The third material may be selected to be
relatively ductile when compared to the first material and to be driven to a
superconductive state by the first material when the first material is in a
superconductive state and the third material is in proximity to the first material. The second material is selected to be substantially non-reactive with the first
material and is sufficiently thin to allow for the third material to be driven to a
superconductive state by the first material through the second material.
The invention also provides a method for producing a superconductive
property composition, comprising forming a plurality of superconductor
particles of a first material being relatively brittle and being selected to be in a
superconductive state above 10K, locating the superconductor particles in a
chamber, introducing gas particles into the chamber, creating a voltage on a sputter target, the sputter target being located in the chamber and being made of
a second material, the gas particles being ionized and then attracted to the
sputter target due to the voltage being created on the sputter target, the gas ions
colliding with the sputter target so that the coating particles of the second
material are released from the sputter target and directed from the sputter target
to the superconductor particles so that the surface of each superconductor
particle is coated with a layer to form a plurality of coated particles.
According to another aspect of the invention, a method for producing a
superconductor property composition is provided, comprising forming a
plurality of superconductor particles of a first material being relatively brittle
and being selected to be in a superconductive state above 10K, dropping the
superconductor particles from a higher elevation to a lower elevation through a
volume under a force of gravity, directing coating particles from a source of
coating particles of a second material to the superconductor particles while dropping through the volume, thereby coating a surface of each superconductor
particle with a coating layer to form a plurality of coated particles, and catching
the superconductor particles at the lower elevation.
The invention also provides a method for producing a superconductor property aggregate comprising forming a plurality of superconductor particles
of a first material being relatively brittle and being selected to be in a
superconductive state above 10K, and simultaneously directing coating particles
of a second material onto each superconductor particle from a first direction and
from a second direction being at an angle relative to the first direction, thereby
simultaneously coating a surface of the superconductor particle in both the first
and second directions with a coating layer.
The invention also provides a method for producing a superconductive
property composition, comprising forming a plurality of superconductor
particles of a first material being relatively brittle and being selected to be in a
superconductive state above 10K, and applying a coating layer on a surface of
each superconductor particle to form a plurality of coated particles, the coating
layers being applied with the superconductor particles of a temperature of below
500°C.
The invention also provides apparatus for coating a plurality of
superconductor particles comprising a chamber, a container, a source of gas
particles, a sputter target, a voltage source, and a stirring device. The container
is located within the chamber with purposes of holding the superconductor
particles. The source of gas particles introduces gas particles into the chamber.
The sputter target is located in the chamber. The voltage source is coupled to the
sputter target so as to create a voltage on the sputter target. The gas particles are ionized and then attracted to the sputter target due to the voltage and collide with the sputter target so that coating particles are released from the sputter
target. The coating particles have movement directed towards the
superconductor particles so that a coating layer is formed on a surface of at least
some of the superconductor particles. The stirring device is connected to the
particles so as to stir the superconductor particles in order to ensure coverage of
coating layers on more of the particles than without stirring.
The invention also provides apparatus for coating a plurality of
superconductor particles comprising a chamber, a higher container, a lower
container, and a source of coating particles. The higher container is for holding
and dropping the superconductor particles from a high elevation to a lower
elevation through a volume in the chamber under a force of gravity. The lower
container is located at the lower elevation to catch the superconductor particles
after dropping through the volume. The source of coating particles are of a
second material. The coating particles are directed from the source to the
superconductor particles while dropping through the volume, thereby coating a
surface of each superconductor particle with a coating layer to form a plurality of
coated particles. The invention also provides apparatus for coating a plurality of
superconductor particles comprising a chamber, a container, a heating element, a
voltage source, and a material within the chamber. A container is located within
the chamber for holding the superconductor particles. The heating element is located within the chamber. The voltage source is coupled to the heating element so that the heating element heats up when the voltage source is
operated. The material is located within the chamber and is being heated by the
heating element, heating of the material causing evaporation thereof into coating
particles. The coating particles form a layer on the superconductor particles. The
material may be selected from the group consisting of silver and its alloys,
niobium and its alloys, a niobium titanium alloy, lead and its alloys, a lead
bismuth alloy, tin and its alloys, and indium and its alloys.
BRIEF DESCRIPTION OF THE DRAWINGS
The invention is further described by way of examples with reference to
the accompanying drawings wherein:
Figure 1 is a cross-sectional side view of apparatus for coating a plurality
of particles, according to one embodiment of the invention;
Figure 2 is a view of superconductor particles which are sputtered with an
initial coating layer utilizing the apparatus of Figure 1;
Figure 3 is a view similar to Figure 2 after the superconductor particles are
stirred;
Figure 4 is a view similar to Figure 3 after a further coating layer is
sputtered on the superconductor particles;
Figure 5 is a view similar to Figure 4 after further stirring and sputtering
onto the superconductor particles;
Figure 6 is a cross-sectional side view of a wire made out of a three
component composition including coated particles of Figure 5 which are mixed
with a ductile material;
Figure 7 is a cross-sectional side view of apparatus for coating a plurality
of particles, according to another embodiment of the invention; Figure 8 is a side view of one superconductor particle which is sputtered
with an initial coating layer utilizing the apparatus of Figure 7;
Figure 9 is a view similar to Figure 8 after the superconductor particle is
rotated as it falls through a volume defined within the apparatus of Figure 7;
Figure 10 is a view similar to Figure 9 after a further coating layer is sputtered onto the superconductor particle;
Figure 11 is a view similar to Figure 10 after further rotation of and
deposition onto the superconductor particle, with recirculation as required;
Figure 12 is a cross-sectional side view of apparatus for coating a plurality of particles, according to a further embodiment of the invention;
Figure 13 is a cross-sectional side view of apparatus for coating a plurality
of particles, being a modification of the apparatus of Figure 12;
Figure 14 illustrates coated superconductor particles which are loosely
arranged without a material between them; and
Figure 15 illustrates the superconductor particles after they are
compressed into a two component composition.
DETAILED DESCRIPTION OF THE INVENTION
Figure 1 of the accompanying drawings illustrates apparatus 20 for
plating a plurality of superconductor particles, according to an embodiment of
the invention. The apparatus 20 includes a chamber 22, a container 24, a stirring
device 26, a sputter target 28, and a voltage source 30 within the chamber 22, and
a pump 32 and an argon gas supply 34 located outside the chamber 22.
The container 24 has a relatively wide base 36 near a base of the chamber
22, and sides 38 extending upwardly from the base 36. The stirring device 26
includes an actuator 40 and a link 42. The link 42 has one end connected to the
actuator 40. The actuator 40 may for example be an electric motor with an
eccentric shaft which vibrates the link 42. The link 42 is preferably vibrated in at
least first and second transverse directions, such as in a circle. Another end of
the link 42 is connected to the container 24. Any movement of the link 42 is
transferred to the container 24. The container 24 is therefore also moved or
vibrated in first and second transverse directions when the actuator 40 is
operated.
The sputter target 28 is located above the container 24 and a conductive
ring 44 is located below a periphery of the sputter target 28. The sputter target
28 is connected to a negative terminal of the voltage source 30 and the ring 44 is
connected to a positive terminal of the voltage source 30.
The pump 32 is connected via a line 46 to the chamber 22. Operation of
the pump 32 causes a reduction in pressure within the chamber 22.
The argon gas source 34 is connected to the chamber 22 via a line 48
having a valve 50 located therein. The argon gas source 34 may for example be a
pressurized cylinder filled with argon gas. Opening or closing of the valve 50
may control flow of argon gas particles into the chamber 22.
In use, the container 24 is filled with a plurality of ceramic superconductor
particles 100. U.S. Patent No. 5,998,336, which is incorporated herein by
reference, describes how the particles 100 can be formed and the materials that
they are made of. Suffice to say that they are relatively brittle ceramic particles
and that they generally have superconductor critical temperatures (Tc) between
10K and 130K, including individual temperatures in between.
The pump 32 is operated so that the pressure within the chamber 22
reduces to about 10'7 torr. The valve 50 is then opened and a small amount of
argon gas flows from the argon gas source 34 through the valve 50 into the
chamber 22 resulting in an increase in pressure to about 10"3 torr. Argon gas
particles are ionized to Ar* ions and then attracted to the sputter target 28
because of the negative voltage that is applied to the sputter target 28. The
voltage source 30 is then energized which turns the sputter target 28 into a
cathode and the ring 44 into an anode. In accordance with general principles
relating to sputter deposition, the argon ions collide with a lower surface of the
sputter target 28, resulting in release of coating particles 102 from the sputter
target 28. The coating particles 102 have high kinetic energy, but numerous
collisions with gas particles in the chamber 22 both lower the energy of the coating particles and randomize the trajectories of the coating particles. The
velocity of the coating particles 102 is primarily directed downwardly towards
the superconductor particles 100.
Reference is now made to Figure 1 in combination with Figure 2 to Figure
5. Figure 2 illustrates the superconductor particles 100 during an initial coating by the coating particles 102. The coating particles 102 form an initial coating
layer 104 on each of upper ones of superconductor particles 100. The directions
of movement of many of the coating particles 102 change as they approach the
superconductor particles 100 between the sputter target 28 and the
superconductor particles 100, due to multiple collisions between respective ones
of the coating particles 102 and with argon gas particles the directions of
movement of the coating particles 102 are thus multidirectional before they
collide with the superconductor particles 100. This has the advantage that initial
coating layers 104 can be formed on surfaces that are not entirely horizontal. It is
therefore possible to form the initial coating layers 104 also on surfaces that are
vertical or substantially vertical to the same extent that they are formed on
horizontal surfaces. A larger area of one of the superconductor particles 100 is
thereby more uniformly coated than when the direction of movement of the
coating particles 102 are unidirectional.
The actuator 40 is continuously operated while the superconductor
particles are being sputtered. Figure 3 illustrates what happens to the
superconductor particles 100, sputtered as shown in Figure 2, after being stirred due to operation of the actuator 40. Some of the superconductor particles 100A sputtered as shown in Figure 2, move down while other ones of the
superconductor particles 100B move up. Stirring also causes rotation of some or
all of the particles sputtered as shown in Figure 2 in directions 106 relative to the
position of the sputter target 28. As a result, previously unsputtered surfaces of the superconductor particles 100 are exposed to the top and therefore towards
the sputter target 28.
Figure 4 illustrates the arrangement of superconductor particles of Figure
3 after further sputtering. Although Figure 4 is shown separate from Figure 3, it
should be understood that the steps carried out in Figures 3 and 4 may occur
simultaneously. In Figure 4, the exposed upper surfaces of the superconductor
particles located at the top are sputtered as in Figure 2. More surfaces of more of
the superconductor particles 100 are thereby covered with further coating layers
108.
By repeating the process shown in Figure 3 and Figure 4, all or
substantially all surfaces of the superconductor particles 100 can be covered with
enveloping coating layers 110 as shown in Figure 5. The combination of the
superconductor particles 100 and the coating layers 110 are hereinafter referred
to as "coated particles 112".
As illustrated in Figure 6 and further described in U.S. Patent No.
5,998,336, the coated particles 112 are mixed with a material 114 and drawn into
wire having a three component composition. The material 114 is chosen to be
relatively ductile when compared to the material of the superconductor particles 100. As such, the material 114 provides ductility to the wire. In general, the
material 114 becomes superconductive at temperatures much lower than the
relatively high temperatures that the superconductor particles 100 become
superconductive. Lead is an example of a material which can be used for the material 114. As described in U.S. Patent No. 5,998,336, the superconductor
particles 100 can drive the material 114 to a superconductive state if the material
114 is in close proximity to the superconductor particles 100. In addition, the
material of the coating layers 110 has to be sufficiently thin and be selected of a
material which allows for the material 114 to be driven to a superconductive
state by the superconductor particles 100. An example of the material of the
coating layers 110 (and therefore also of the sputtered target 28 in Figure 1) is
silver. The main purpose of the coating layers 110 is to protect the material 114
from oxidation by the superconductor particles 114 when in the composite
shown in Figure 6 and also to protect the superconductor particles 100 from
environmental oxidation before being mixed into the composite of Figure 6.
As mentioned, an advantage of the use of the apparatus of Figure 1 is that
the coating particles shown in Figure 2 deposit from different sides onto each
superconductor particle 100. Another advantage is that the superconductor
particles remain at a relatively low temperature during the coating process,
typically about 200°C. A temperature below 500°C of the superconductor
particles 102 is particularly beneficial because of a substantially reduced likelihood that the material of the superconductor particles 100 will lose oxygen and thus their superconducting properties.
One disadvantage of the apparatus of Figure 1 is that the sputter target 28
has to be replaced from time to time. Furthermore, it may be difficult to mix the
superconductor particles 100 to an extent which ensures suitable and uniform
forming of coating layers 110 at a relatively high throughput rate. A further
disadvantage of the use of the apparatus 20 is that it does not lend itself to continuous commercial production because the container 24 continually has to be
removed from the chamber 22 in order to replace coated particles with uncoated superconductor particles.
Figure 7 illustrates an alternative apparatus 130 which may overcome
many of the disadvantages associated with the apparatus 20 of Figure 1. The
apparatus 130 includes a chamber 132, a pump 134, and an argon gas supply 136,
serving the same purposes and being operated the same as the chamber 22,
pump 32, and argon gas supply 34, respectively, of the apparatus 20 in Figure 1.
The apparatus 130 further includes an upper container 138, a lower container
140, a cylindrical sputter target 142, a voltage source 144, and a conductive pin
146. The upper container 148 is in the form of a funnel having a large upper
area 150 and a small lower mouth 152. The lower container 140 is also in the
form of a funnel having a large upper area 154 and a small lower mouth 156. The
upper container 138 is located at a higher elevation and the lower container 140 is located at a lower elevation below the upper container 138. An imaginary
volume 160 is defined having a height extending from the upper area 154 of the
lower container 140 to the lower mouth 152 of the upper container 138, and a
width corresponding to a width of the upper area 154 of the lower container 140.
The cylindrical sputter target 142 extends vertically through the chamber 132. The conductive pin 146 is located centrally within the cylindrical sputter
target and extends vertically through the cylindrical sputter target 142. The
volume 160 is located between the pin 146 and one side of the cylindrical sputter
target 142. When viewed from above, the cylindrical sputter target 142 entirely
encircles and encloses the volume 160. The cylindrical sputter target 142 is thus
located on all sides of the volume 160 when viewed from above.
The cylindrical sputter target 142 is connected to a negative terminal of
the voltage source 142 and the pin 146 is connected to a positive terminal of the
voltage source 142. The voltage source 142 serves the same purpose as the
voltage source 30 of the apparatus 20 in Figure 1.
In use, argon ions collide with a surface of the cylindrical sputter target
142, causing release of coating particles from the cylindrical sputter target 142. A
transporting device 164 such as a conveyor transports superconductor particles
100 to the upper area 150 of the upper container 138. The superconductor
particles 100 move through the upper container 138 to the lower mouth 152
thereof and then drop from the mouth 152 through the volume 160. The
superconductor particles 100 are collected by the upper area 154 of the lower container 140 which catches the superconductor particles 100 and can move
through the lower container 140 to the lower mouth 156 thereof, whereafter they
are again collected by the transporting device 164 and transported and delivered
to the upper container 138.
The coating particles released from the cylindrical sputter target 142 move
in generally a horizontal direction 166 into the volume 160 and attach to the
superconductor particles 100. Some of the coating particles may move through
the volume 160 without attaching to any of the superconductor particles 100 and attach to an opposing side of the cylindrical sputter target 142.
An advantage of the apparatus 130 is that it is suitable for large-scale
production. One reason why it is suitable for large-scale production is because it
can be scaled so that the volume 160 is sufficiently high to accommodate a
required number of superconductor particles. Another reason why it is suitable
for large-scale production purposes is because large amounts of superconductor
particles can be collected in the containers 138 and 140 and be fed through the
volume 160 as required.
A further reason why the apparatus 130 of Figure 7 has commercial
applicability is that there is no need to remove any containers from the chamber 132. Coated particles 170 can simply be extracted from the lower container 140
simply directing them to an opening out of the chamber 132. A valve mechanism
(not shown) may also be provided which ensures that a negative pressure within
the chamber 132 is maintained when the coated particles 170 are removed. Once the coated particles 170 are removed, uncoated superconductor particles 172 may be introduced into the system and be fed to the upper container 138.
Figure 8 to Figure 11 now illustrate how one superconductor particle 100
is coated utilizing the apparatus 130 of Figure 7.
As shown in Figure 8, coating particles 102 have velocities in multiple
directions just before contacting the superconductor particle 100. The coating
particles 102 thus contact the superconductor particle 100 from multiple
directions which are at angles relative to one another. Faces of the
superconductor particle 100 which are at angles relative to one another are thus
covered with an initial coating layer 104. It should be noted that a left side of the
superconductor particle facing towards a closest wall of the cylindrical sputter
target 142 is covered more with an initial layer 104 than a right side of the
superconductor particle 100 facing away from the closest wall of the cylindrical
sputter target 142.
As shown in Figure 9, the superconductor particle 100 rotates in a
direction 106 falling through the volume 160. A number of factors may
contribute to rotation in a direction 106 of the superconductor particle 100 including collisions between the superconductor particle 100 and other
superconductor particles or with some of the coating particles 102, the location of
the center of gravity of the superconductor particle 100, especially once the initial
coating layer 104 is formed, or rotation induced by the upper container 138 onto
the superconductor particle 100. The result of the rotation in the direction 106 is that a face 107 of the superconductor particle 100, which is not coated is step
shown in Figure 8, is exposed to a closest wall of the cylindrical sputter target 142.
Figure 10, illustrates a step that is typically carried out together with the
step illustrated in Figure 9. The superconductor particle 100 is further coated with a further coating 108 on the exposed surface 107. Further rotation and
coating of the superconductor particle 100 results in coating 110 which entirely
envelops the superconductor particle 100 as shown in Figure 11. Depending on
the dimensions of the components of the apparatus 130, in particular the volume
160, and other processing conditions, it may occur that the superconductor
particle 100 is not sufficiently enveloped by a coating layer 110. In such a case,
the partially coated superconductor particles are returned and recirculated
utilizing the transporting device 164. Figure 7 illustrates one example of a drop through sputtering apparatus
that may be used. Other devices may be alternatively used such as a cylindrical
magnetron sputtering gun. A cylindrical magnetron sputtering gun utilizes a
cylindrical sputter target such as the cylindrical sputter target 142 of Figure 7
which is connected to a negative terminal of a voltage source. An additional
cylinder is located around the cylindrical sputter target thereof which is
connected to a positive terminal of the voltage source. The additional cylinder
replaces the function of the pin 146 of Figure 7.
Figure 12 illustrates a further apparatus 180 that can be used for coating superconductor particles. The apparatus 180 includes a chamber 182, a container
184, a stirring device 186, a heating element 188, and a voltage source 190 located
within the chamber 182, and a pump 192 located outside the chamber 182.
The container 184 and the stirring device 186 are the same and serve the
same function as the container 24 and stirring device 26 of the apparatus 20 in
Figure 1. Opposing ends of the coil 188 are connected to opposing terminals of
the voltage source 190 so that the coil 188 is heated when the voltage source 190
is operated. The coil 188 is coated with a layer of material 194. The pump 192 is connected to the chamber 182 via a connection line 196.
In use, the pump 192 is operated until the pressure within the chamber
182 reduces to about 10'7 torr. The voltage source 190 is then operated so that the
coil 188 is heated. The material 194 is typically silver which evaporates at a
temperature of about 960°C. The coil 188 is heated to a temperature above
960°C, typically to about 1000°C which causes evaporation of the silver material
194. The evaporated silver form coating particles 102 which move with linear
trajectories away from the coil. A fraction of the coating particles move toward
the superconductor particle 100 located within the container 184.
The apparatus 180, as with the apparatus 20 of Figure 1, does not lend
itself to large-scale production. It may however be possible to incorporate an
evaporation system such as the coil 188 and the material 190 into an apparatus
such as the apparatus 130 of Figure 7, in which case the sputter target 142 may be
removed. Sputtering however has certain advantages over evaporation. One
advantage of sputtering is that a coating layer can be formed on superconductor
particles at very low temperatures as previously described. Evaporation, by
contrast, generally results in a coating layer being formed on superconductor
particles at temperatures above 500°C, the temperature at which the superconductor particles 100 lose oxygen and thus their superconductor
properties which could cause unwanted reaction between coating particles and
the material of the superconductor particles. Another advantage of the use of
sputtering is that deposition is multidirectional as described with reference to
Figure 2 and Figure 8. Evaporation, by contrast, generally results in
unidirectional deposition of coating layers on superconductor particles.
The further problem with the apparatus 180 in Figure 12 is that the
coating particles 102 do not only find their way onto the superconductor
particles 100 but also find their way onto other components within the chamber
182 including any windows that are located on the chamber 182. Figure 13
illustrates apparatus 180A which is essentially a modification of the apparatus
180 of Figure 12. The apparatus 180 also includes a chamber 182A, a container
184A, a stirring device 186A, a voltage source 190A, a pump 192A, and a line
196A connecting the pump 192A to the chamber 182A. In addition, an enclosure
197 is located within the chamber 182A. The container 184A is located outside
the enclosure 197. Opposing terminals of the voltage source 190A are connected
to the enclosure 197. A conductive cup 198 is located within the enclosure 197.
An outlet passage 199 is formed out of a lower surface of the enclosure 197. When the voltage source 190A is operated, current passes through the enclosure
197 and the cup 198. The current heats material 194A located within the cup 198,
causing evaporation thereof. The evaporated material then attaches to inner
surfaces of the enclosure 197. The current passing through the enclosure 197
heats the particles attached to the inner surface thereof, causing evaporation
thereof into coating particles which leave the enclosure 197 in a downward
direction. None of the coating particles move in sideways or upward directions.
Side and upper surfaces of the chamber 192A are not covered by any coating
particles. The coating particles attached to superconductor particles in the
container 184A.
The foregoing description relates primarily to the manufacture of a three
component composition as shown in Figure 6. The three component
composition includes superconductor particles 100, coating layers 110 on the
superconductor particles 100, and a material 114 between the coated
superconductor particles. In such a composition the superconductor particles
100 are generally relatively brittle and the material 114 is generally relatively
ductile. Such a composition finds particular application in a composition
wherein the superconductor particles 100 display superconductive characteristics
at relatively high temperatures. In such a composition, the coating layers 110 are
typically made of silver.
It should however be understood that the invention may also find
application in the manufacture of a two component composition. Figure 3 illustrates a plurality of superconductor particles 200 which are coated with
coating layers 210. The coated particles 212 are loosely grouped together
without a third material between them. As shown in Figure 15, the coated
particles 212 are then compressed into a composition wherein the layers 210 form
interfaces between the superconductor particles 200. The coating layers 210 are
typically not made of silver since silver cannot be driven to a superconductive
state. Typical materials that can be driven to a superconductive state include
niobium and its alloys, a niobium titanium alloy, lead and its alloys, a lead
bismuth alloy, tin and its alloys, and indium and its alloys. These materials may
however be more reactive with the first material than silver. Silver is also more
permeable to oxygen allowing for replacement of oxygen into the first material if
necessary.
Any one of the sputter target 28 in figure 1, the cylindrical sputter target
142 in Figure 7, or the material 194 in Figure 12 or the material 194A in Figure 13
may be of these materials that can be driven to a superconductive state.
While certain exemplary embodiments have been described and shown in
the accompanying drawings, it is to be understood that such embodiments are
merely illustrative and not restrictive of the current invention, and that this
invention is not restricted to the specific constructions and arrangements shown
and described since modifications may occur to those ordinarily skilled in the art.