WO2002096795A1 - Device for light modulation by reflection and method for the production thereof - Google Patents
Device for light modulation by reflection and method for the production thereof Download PDFInfo
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- WO2002096795A1 WO2002096795A1 PCT/FR2002/001777 FR0201777W WO02096795A1 WO 2002096795 A1 WO2002096795 A1 WO 2002096795A1 FR 0201777 W FR0201777 W FR 0201777W WO 02096795 A1 WO02096795 A1 WO 02096795A1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0035—Constitution or structural means for controlling the movement of the flexible or deformable elements
- B81B3/0051—For defining the movement, i.e. structures that guide or limit the movement of an element
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00214—Processes for the simultaneaous manufacturing of a network or an array of similar microstructural devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/04—Optical MEMS
- B81B2201/042—Micromirrors, not used as optical switches
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/05—Type of movement
- B81B2203/058—Rotation out of a plane parallel to the substrate
Definitions
- the object of the present invention is a device for modulating light by reflection, and its manufacturing process. It finds an application in the field of large screen projection.
- Patent 0614101 describes micro-mirrors held by torsion bars offset by a certain height relative to the substrate which supports them.
- On the substrate there are two electrodes located on either side of the torsion bars, make it possible to rotate the micro-mirrors in one direction or another relative to their rest position.
- Patent 5784190 provides that the substrate supporting the micro-mirrors is transparent.
- Patent 5835256 describes a device in which the micro-mirrors are held by a transparent substrate, facing another silicon substrate, containing the control electronics.
- patent 6046840 describes a mechanical stop for micromirrors, included in patent 6172797.
- micro-mirrors attracted by an electrode, the return to the rest position being effected by the elastic force produced by the torsion bar, or the deformable beam.
- the thickness must be sufficient. Its mass is therefore relatively large.
- it returns to the rest position by simple elastic force.
- the rigidity of the torsion bar or the deformable beam must be fairly high, which induces significant control voltages.
- the positions of the micro-mirrors are imprecise.
- the cavities formed on the silicon substrate are complex to thereby affecting manufacturing yields when on the same device, it is necessary to 'achieve a very large number of these cavities.
- Patent application 0103569 filed March 16, 2001 describes micro-shutters which, depending on the application, can be micro-mirrors. They are very fine, and have a very low mechanical rigidity which is not used to create by elastic restoring force, the movements of the micro-mirrors. They are surrounded by flat surfaces including electrodes, which by attracting micro-flaps, make them apply to flat surfaces. The microvolets therefore conform to the flatness of these surfaces. In addition, their working position is extremely precise, because it is given by the flat surfaces which frame the micro-mirrors, which allows better optical optimization. If this latter structure has many advantages compared to those described in the patents cited above, it is not very suitable for projection devices. In fact, the vertical electrodes described in this patent application are difficult to produce in small dimensions, compatible with the size of a projection device.
- the object of the present invention is precisely to remedy these drawbacks, by proposing a device for modulating light by reflection, and its manufacturing method, in which the micro-mirrors are produced on a plane surface of silicon, without micro-cavity, each movement of these micro-mirrors is activated by electrostatic forces, the elastic forces being very weak, the micro-mirrors have precise positions, a very short response time.
- the proposed structure does not use vertical walls.
- a second object of the invention is to describe a very simple manufacturing process, making it possible to obtain high yields. More specifically, the present invention aims at a light modulation device, and its manufacturing method.
- the device according to the invention provides micro-mirrors, deposited on the plane of a silicon surface, comprising a first electrode, without underlying cavity.
- the micro-mirrors are held by torsion bars, the inking surfaces of which are on the same silicon plane, without a separation structure.
- the mirrors form a second electrode.
- a second transparent substrate, comprising an insulated transparent conductive layer, comprises patterns in the form of parallel grooves. The second substrate is applied to the first silicon substrate, the micro-mirrors attracted by electrostatic forces, are on the walls of the grooves of the second substrate, to press against their surface.
- the manufacturing method according to the invention provides, according to a first mode, for the silicon substrate to include addressing circuits, and according to a second mode, row and column output pads, to be connected by hybridization to control circuits.
- the first electrode is deposited, then isolated by a dielectric layer.
- a planar sacrificial layer is deposited, then the micro-mirrors are produced on this layer, which are released by eliminating the sacrificial layer.
- a second substrate made of a plastic material, such as plycarbonate for example, parallel grooves are produced by pressing.
- FIG. 1 shows the micro-mirrors seen in plan - Figure 2 shows a section of the silicon substrate comprising the micro-mirrors.
- FIG. 3 shows a section of the device with the second transparent substrate.
- FIG. 4 shows a particular mode of the invention.
- Figure 1 shows micro-mirrors (100)
- FIG. 2 shows a section, along the axis (A) of FIG. 1.
- a first dielectric layer (201) is produced which can be SiO 2 for example.
- the first electrodes (202) are produced, which are isolated by a second dielectric layer (203).
- the electrodes (202) are connected to a voltage source by means of columns, or in relation to circuits produced on the substrate (200), not shown in the figure.
- a sacrificial layer known to those skilled in the art, is deposited.
- This sacrificial layer was engraved to releasing the inking surfaces (102) so that the thin conductive layer, made of aluminum for example constituting the micro-mirrors, through the surfaces etched in the sacrificial layer, makes contact with the insulating layer (203).
- the pairs of micro-mirrors (100) and (101) can be connected in lines with other pairs, each line being in contact with the line scanning electronics, or can be in contact with circuits produced on the surface of the silicon substrate (200).
- the aluminum conductive layer is then etched, for example, through lithography, to make the micro-mirrors, their torsion bars, their inking surface, with the same etching step. Then the sacrificial layer is etched, which releases the micro-mirrors.
- grooves (302) are produced by pressing with the aid of a suitable matrix, as shown in FIG. 3.
- the sides of the grooves can be inclined by 10 ° to 20 ° relative to the plane of the substrate (300).
- a layer of Si02 is deposited at low temperature, by so-called PECVD deposition, as "Plasma Enhanced Chemical Vapor Deposition" according to the English language, a process known to those skilled in the art.
- PECVD deposition as "Plasma Enhanced Chemical Vapor Deposition” according to the English language, a process known to those skilled in the art.
- a transparent conductive layer (301) is deposited, such as ITO for example, which is an oxide of tin and indium, known to those skilled in the art. This ITO layer is isolated with a second layer of Si02.
- the two substrates are assembled by a bead of resin at the periphery of the device, so that the projecting parts (303) of the grooves of the substrate (300) are located parallel and between the torsion bars (103) of the micro-mirrors (100) and (101).
- the grooves obtained by pressing on the second substrate (300) have an asymmetrical shape as shown in FIG. 4.
- One of the sides (400) of each groove has an inclination at an angle ( I) relative to the plane of the second substrate, this angle (I) being equal to the angle of the incident light beam (401) which, passing through the transparent substrate (300) is reflected on the micro-mirrors.
- the incident beam (401) will see no separation between the adjacent micromirrors.
- the micro-mirrors are no longer paired, and can be controlled individually or according to a line of individual micro-mirrors (100) or (101).
- Each pixel of the device according to the invention can comprise several micro-mirrors. These micromirrors are controlled by tensions applied to the different electrodes (202), (301) and to the micromirrors. The control voltages are applied to the lines formed by the micro-mirrors of the same line connected in series, to columns made up of electrodes (203) etched in the form of columns, and to the electrode (301) which is common to all the pixels of the device.
- Another solution consists in addressing each pixel individually by circuits located under the micro-mirrors, on the plane of the silicon surface of the substrate (200).
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- Computer Hardware Design (AREA)
- Mechanical Light Control Or Optical Switches (AREA)
Abstract
Description
DISPOSITIF DE MODULATION DE LUMIERE PAR REFLEXION , ET SON PROCEDE DE FABRICATION. DEVICE FOR MODULATING LIGHT BY REFLECTION, AND ITS MANUFACTURING METHOD.
La présente invention, a pour but un dispositif de modulation de lumière par réflexion, et son procédé de fabrication. Elle trouve une application dans le domaine de la projection grand écran.The object of the present invention is a device for modulating light by reflection, and its manufacturing process. It finds an application in the field of large screen projection.
Parmi les dispositifs de projection grand écran, on trouve les dispositifs de modulation de lumière par réflexion, qui utilisent des valves de lumière à cristaux liquides, ou à micro-mirroirs, comme ceux développés par Texas Instrument sous le langage anglo-saxon « Digital Micromirror Device ». De façon plus précise, le brevet 4229732 de 1978, décrit des micro-miroirs constitués de Si02 et d'un métal amorphe, au dessus d'une cavité au fond de laquelle, on trouve une électrode de commande. En 1982, le brevet 4292435, décrit des doigts déformables réfléchissants, face à face, et décalés les uns des autres, disposés également au dessus d'une cavité. Seules les extrémités des doigts se déforment, ce qui limite la surface active du dispositif. Le brevet 4596992 de Hornleck décrit également des icro- miroirs au dessus d'une cavité faite sur un substrat de silicium comprenant des circuits de commande. En 1993, on trouve le brevet 0614101, qui décrit des micro-miroirs tenus par des barres de torsion décalées d'une certaine hauteur par rapport au substrat qui les supporte. Sur le substrat, on trouve deux électrodes situées de part et d' autre des barres de torsion, permettent de faire pivoter les micro- miroits dans une sens ou dans un autre par rapport à leur position de repos. Afin d'augmenter l'angle de rotation, on peut pratiquer dans le substrat des tranchées. Le brevet 5784190 prévoit que le substrat supportant les micro-miroirs soit transparent. Le brevet 5835256 décrit un dispositif où les micro- miroirs sont tenus par un substrat transparent, face à un autre substrat de silicium, contenant l'électronique de commande. Le même auteur, dans le brevet 6046840, décrit une butée mécanique aux micromiroirs, reprises dans le brevet 6172797. Ces dispositifs, décrivent des micro-miroirs attirés par une électrode, le retour en position de repos se faisant par la force élastique produite par la barre de torsion, ou la poutre déformable. Pour que le micro-miroir soit parfaitement plan, il faut que son épaisseur soit suffisante. Sa masse est donc relativement importante. De plus, son retour en position de repos, se fait par la simple force élastique. Comme le micro-miroir doit tourner rapidement, il faut que la rigidité de la barre de torsion ou la poutre déformable, soit assez grande, ce qui induit des tensions de commande importantes. Les positions des micro-miroirs sont imprécises. Enfin les cavités pratiquées sur le substrat de silicium sont complexes à faire ce qui affecte les rendements de fabrication lorsque sur le même dispositif, il faut' réaliser un très grand nombre de ces cavités.Among the large screen projection devices, there are reflection light modulation devices, which use liquid crystal or micro-mirror light valves, such as those developed by Texas Instrument under the Anglo-Saxon language "Digital Micromirror Device ”. More specifically, patent 4229732 of 1978 describes micro-mirrors made of SiO2 and an amorphous metal, above a cavity at the bottom of which there is a control electrode. In 1982, patent 4292435, describes deformable reflecting fingers, face to face, and offset from each other, also arranged above a cavity. Only the ends of the fingers are deformed, which limits the active surface of the device. Patent 4596992 to Hornleck also describes icromirrors above a cavity made on a silicon substrate comprising control circuits. In 1993, there is patent 0614101, which describes micro-mirrors held by torsion bars offset by a certain height relative to the substrate which supports them. On the substrate, there are two electrodes located on either side of the torsion bars, make it possible to rotate the micro-mirrors in one direction or another relative to their rest position. In order to increase the angle of rotation, we can practice in the substrate of the trenches. Patent 5784190 provides that the substrate supporting the micro-mirrors is transparent. Patent 5835256 describes a device in which the micro-mirrors are held by a transparent substrate, facing another silicon substrate, containing the control electronics. The same author, in patent 6046840, describes a mechanical stop for micromirrors, included in patent 6172797. These devices describe micro-mirrors attracted by an electrode, the return to the rest position being effected by the elastic force produced by the torsion bar, or the deformable beam. For the micro-mirror to be perfectly flat, its thickness must be sufficient. Its mass is therefore relatively large. In addition, it returns to the rest position by simple elastic force. As the micro-mirror must rotate rapidly, the rigidity of the torsion bar or the deformable beam must be fairly high, which induces significant control voltages. The positions of the micro-mirrors are imprecise. Finally, the cavities formed on the silicon substrate are complex to thereby affecting manufacturing yields when on the same device, it is necessary to 'achieve a very large number of these cavities.
La demande de brevet 0103569 déposée le 16 mars 2001, décrit des micro-volets qui selon l'application peuvent être des mciro-miroirs. Ils sont très fins, et présentent une très faible rigidité mécanique qui n'est pas utilisée pour créer par force de rappel élastique, les mouvements des mciro-miroirs. Ils sont encadrés de surfaces planes comprenant des électrodes, qui en attirant les micro-volets, les font s'appliquer sur les surfaces planes. Les microvolets épousent donc la planéité de ces surfaces . De plus, leur position de travail, est extrêmement précise, car elle est donnée par les surfaces planes qui encadrent les micro-miroirs, ce qui permet une meilleure optimisation optique. Si cette dernière structure présente de nombreux avantages par rapport à celles décrites dans les brevets cités précédemment, elle est assez mal adaptée aux dispositifs de projection. En effet, les électrodes verticales décrites dans cette demande de brevet, sont difficiles à réaliser en petite dimension, compatibles avec la taille d'un dispositif de projection.Patent application 0103569 filed March 16, 2001, describes micro-shutters which, depending on the application, can be micro-mirrors. They are very fine, and have a very low mechanical rigidity which is not used to create by elastic restoring force, the movements of the micro-mirrors. They are surrounded by flat surfaces including electrodes, which by attracting micro-flaps, make them apply to flat surfaces. The microvolets therefore conform to the flatness of these surfaces. In addition, their working position is extremely precise, because it is given by the flat surfaces which frame the micro-mirrors, which allows better optical optimization. If this latter structure has many advantages compared to those described in the patents cited above, it is not very suitable for projection devices. In fact, the vertical electrodes described in this patent application are difficult to produce in small dimensions, compatible with the size of a projection device.
La présente invention a justement pour but de remédier à ces inconvénients, en proposant un dispositif de modulation de lumière par réflexion, et son procédé de fabrication, dans lequel les micro- miroirs sont réalisés sur une surface plane de silicium, sans micro-cavité, chaque mouvement de ces micro-miroirs est activé par des forces électrostatiques, les forces élastiques étant très faibles, les micro-miroirs ont des positions précises, un temps de réponse très court. La structure proposée n'utilise pas de parois verticales. Un second objet de l'invention, est de décrire un procédé de fabrication très simple, permettant d'obtenir des rendements élevés. De façon plus précise, la présente invention a pour but un dispositif de modulation de lumière, et son procédé de fabrication. Le dispositif selon l'invention, prévoit des micro-miroirs, déposés sur le plan d'une surface de silicium, comprenant une première électrode, sans cavité sous jacente. Les micro-miroirs sont tenus par des barres de torsion, dont les surfaces d' encrage sont sur le même plan de silicium, sans structure de séparation. Les icro- miroirs forment une seconde électrode. Un second substrat transparent, comprenant une couche conductrice transparente isolée, comprend des motifs sous forme de sillons parallèles. Le second substrat est appliqué sur le premier substrat de silicium, les micro-miroirs attirés par des forces électrostatiques, sont sur les parois des sillons du second substrat, pour venir plaquer contre leur surface. La lumière traverse le second substrat, et se réfléchit sur la surface des micro-miroirs qui sont plaqués soit sur la surface du premier substrat, soit sur la surface des sillons du second substrat. Le procédé de fabrication selon l'invention, prévoit selon un premier mode, que le substrat de silicium comprend des circuits d'adressage, et selon un second mode, des plots de sortie de lignes et de colonnes, pour être connectés par hybridation à des circuits de commande. La première électrode est déposée , puis isolée par une couche diélectrique. On dépose une couche sacrificielle, plane, puis on réalise sur cette couche, les micro-miroirs que l'on libère par élimination de la couche sacrificielle. Sur un second substrat constitué d'un matériau plastique , comme du plycarbonate par exemple, on réalise par pressage, les sillons parallèles. On couvre la surface ainsi préparée d'une couche conductrice transparente, comme de l'oxyde d'indium et d' étain , que l'on isole par une couche diélectrique. On rapproche les deux substrat que l'on assemble par un cordon périphérique de résine, si besoin sous un vide partiel. De toute façon, les caractéristiques et avantages de l'invention, apparaîtront mieux après la description qui suit, donnée à titre explicatif et nullement limitatif. Cette description se réfère à des dessins annexés, dans lesquels :The object of the present invention is precisely to remedy these drawbacks, by proposing a device for modulating light by reflection, and its manufacturing method, in which the micro-mirrors are produced on a plane surface of silicon, without micro-cavity, each movement of these micro-mirrors is activated by electrostatic forces, the elastic forces being very weak, the micro-mirrors have precise positions, a very short response time. The proposed structure does not use vertical walls. A second object of the invention is to describe a very simple manufacturing process, making it possible to obtain high yields. More specifically, the present invention aims at a light modulation device, and its manufacturing method. The device according to the invention provides micro-mirrors, deposited on the plane of a silicon surface, comprising a first electrode, without underlying cavity. The micro-mirrors are held by torsion bars, the inking surfaces of which are on the same silicon plane, without a separation structure. The mirrors form a second electrode. A second transparent substrate, comprising an insulated transparent conductive layer, comprises patterns in the form of parallel grooves. The second substrate is applied to the first silicon substrate, the micro-mirrors attracted by electrostatic forces, are on the walls of the grooves of the second substrate, to press against their surface. The light passes through the second substrate, and is reflected on the surface of the micro-mirrors which are plated either on the surface of the first substrate, or on the surface of the grooves of the second substrate. The manufacturing method according to the invention provides, according to a first mode, for the silicon substrate to include addressing circuits, and according to a second mode, row and column output pads, to be connected by hybridization to control circuits. The first electrode is deposited, then isolated by a dielectric layer. A planar sacrificial layer is deposited, then the micro-mirrors are produced on this layer, which are released by eliminating the sacrificial layer. On a second substrate made of a plastic material, such as plycarbonate for example, parallel grooves are produced by pressing. The surface thus prepared is covered with a transparent conductive layer, such as indium tin oxide, which is isolated by a dielectric layer. The two substrates are brought together and assembled by a peripheral bead of resin, if necessary under a partial vacuum. In any case, the characteristics and advantages of the invention will appear better after the description which follows, given by way of explanation and in no way limiting. This description refers to the accompanying drawings, in which:
— a figure 1 montre les micro-miroirs vus en plan —La figure 2 montre une section du substrat de silicium comprenant les micro-miroirs.- Figure 1 shows the micro-mirrors seen in plan - Figure 2 shows a section of the silicon substrate comprising the micro-mirrors.
—La figure 3 montre une section du dispositif avec le second substrat transparent.- Figure 3 shows a section of the device with the second transparent substrate.
—La figure 4 montre un mode particulier de 1' invention.FIG. 4 shows a particular mode of the invention.
La figure 1 montre des micro-miroirs (100) etFigure 1 shows micro-mirrors (100) and
(101) vus en plan, selon un mode particulier de l'invention, où les micro-miroirs sont assemblés par paire, partageant les mêmes surfaces d'encrage (102).(101) seen in plan, according to a particular embodiment of the invention, where the micro-mirrors are assembled in pairs, sharing the same inking surfaces (102).
Ces surfaces d' encrages sont connectées à une source de tension soit au travers de lignes, soit par l'intermédiaire de circuits réalisés sur le substrat de silicium supportant les micro-miroirs. La figure montre également un exemple de barres de torsionsThese inking surfaces are connected to a voltage source either through lines, or by means of circuits produced on the silicon substrate supporting the micro-mirrors. The figure also shows an example of torsion bars
(103) connues de l'homme de l'art.(103) known to those skilled in the art.
La figure 2 montre une section, selon l'axe (A) de la figure 1. Sur le substrat de silicium (200), on réalise une première couche diélectrique (201) qui peut être du Si02 par exemple. Sur cette couche, on réalise les premières électrodes (202), que l'on isole par une seconde couche diélectrique (203) . Les électrodes (202) sont reliées à une source de tension par l'intermédiaire de colonnes, ou en relation avec des circuits réalisés sur le substrat (200), non représentés sur la figure. Sur la couche (203), on dépose une couche sacrificielle, connue de l'homme de l'art. Cette couche sacrificielle a été gravée pour libérer les surfaces d'encrage (102), afin que la couche mince conductrice, en aluminium par exemple constituant les micro-miroirs, au travers des surfaces gravées dans la couche sacrificielle, prenne contact sur la couche isolante (203) . Les paires de micro-miroirs (100) et (101) peuvent être connectés en lignes avec d'autres paires, chaque ligne étant en contact avec l'électronique de balayage ligne, ou peuvent être en contact avec des circuits réalisés sur la surface du substrat de silicium (200) . On grave ensuite la couche conductrice d' aluminium par exemple, au travers d'une lithographie, pour faire les micro-miroirs, leurs barres de torsion, leur surface d'encrage, avec la même étape de gravure. On grave ensuite la couche sacrificielle, ce qui libère les micro-miroirs.FIG. 2 shows a section, along the axis (A) of FIG. 1. On the silicon substrate (200), a first dielectric layer (201) is produced which can be SiO 2 for example. On this layer, the first electrodes (202) are produced, which are isolated by a second dielectric layer (203). The electrodes (202) are connected to a voltage source by means of columns, or in relation to circuits produced on the substrate (200), not shown in the figure. On the layer (203), a sacrificial layer, known to those skilled in the art, is deposited. This sacrificial layer was engraved to releasing the inking surfaces (102) so that the thin conductive layer, made of aluminum for example constituting the micro-mirrors, through the surfaces etched in the sacrificial layer, makes contact with the insulating layer (203). The pairs of micro-mirrors (100) and (101) can be connected in lines with other pairs, each line being in contact with the line scanning electronics, or can be in contact with circuits produced on the surface of the silicon substrate (200). The aluminum conductive layer is then etched, for example, through lithography, to make the micro-mirrors, their torsion bars, their inking surface, with the same etching step. Then the sacrificial layer is etched, which releases the micro-mirrors.
Sur un autre substrat (300) qui peut être par exemple du polycarbonate, on réalise par pressage à l'aide d'une matrice adaptée, des sillons (302), comme représentés sur la figure 3. Les flancs des sillons peuvent être inclinés de 10° à 20° par rapport au plan du substrat (300) . Sur cette surface, on dépose une couche de Si02 à basse température, par dépôt dit PECVD, comme « Plasma Enhanced Chemical Vapor Déposition » selon le langage anglo-saxon, procédé connu de i'homme de l'art. Sur cette couche de Si02, on dépose une couche conductrice transparente (301) comme de l'ITO par exemple qui est un oxyde d'étain et d' indium, connue de l'homme de l'art. On isole cette couche d' ITO par une seconde couche de Si02. On assemble les deux substrats par un cordon de résine à la périphérie du dispositif, afin que les parties saillantes (303) des sillons du substrat (300) soient situées parallèlement et entre les barres de torsion (103) des micro-miroirs (100) et (101) .On another substrate (300) which may for example be polycarbonate, grooves (302) are produced by pressing with the aid of a suitable matrix, as shown in FIG. 3. The sides of the grooves can be inclined by 10 ° to 20 ° relative to the plane of the substrate (300). On this surface, a layer of Si02 is deposited at low temperature, by so-called PECVD deposition, as "Plasma Enhanced Chemical Vapor Deposition" according to the English language, a process known to those skilled in the art. On this layer of Si02, a transparent conductive layer (301) is deposited, such as ITO for example, which is an oxide of tin and indium, known to those skilled in the art. This ITO layer is isolated with a second layer of Si02. The two substrates are assembled by a bead of resin at the periphery of the device, so that the projecting parts (303) of the grooves of the substrate (300) are located parallel and between the torsion bars (103) of the micro-mirrors (100) and (101).
Selon un second mode de l'invention, les sillons obtenus par pressage sur le second substrat (300), ont une forme asymétrique comme le montre la figure 4. Un des flancs (400) de chaque sillon, a une inclinaison selon un angle (I) par rapport au plan du second substrat, cet angle (I) étant égal à l'angle du faisceau lumineux incident (401) qui en traversant le substrat transparent (300) se réfléchit sur les micro-miroirs . Selon ce mode, le faisceau incident (401) ne verra aucune séparation entre les micromiroirs adjacents . Selon ce mode, les micro-miroirs ne sont plus appairés, et peuvent être commandé individuellement ou selon une ligne de micro-miroirs individuels (100) ou (101) .According to a second embodiment of the invention, the grooves obtained by pressing on the second substrate (300) have an asymmetrical shape as shown in FIG. 4. One of the sides (400) of each groove has an inclination at an angle ( I) relative to the plane of the second substrate, this angle (I) being equal to the angle of the incident light beam (401) which, passing through the transparent substrate (300) is reflected on the micro-mirrors. According to this mode, the incident beam (401) will see no separation between the adjacent micromirrors. According to this mode, the micro-mirrors are no longer paired, and can be controlled individually or according to a line of individual micro-mirrors (100) or (101).
Chaque pixel du dispositif selon l'invention, peut comprendre plusieurs micro-miroirs. Ces micromiroirs, sont commandés par des tentions appliquées aux différentes électrodes (202), (301) et aux micromiroirs. Les tensions de commande sont appliquées aux lignes constituées par les micro-miroirs d'une même ligne connectés en série, à des colonnes constituées d'électrodes (203) gravées sous la forme de colonnes, et à l'électrode (301) qui est commune à tous les pixels du dispositif. Une autre solution, consiste à adresser chaque pixel individuellement par des circuits situés sous les micro-miroirs, sur le plan de la surface de silicium du substrat (200) . Each pixel of the device according to the invention can comprise several micro-mirrors. These micromirrors are controlled by tensions applied to the different electrodes (202), (301) and to the micromirrors. The control voltages are applied to the lines formed by the micro-mirrors of the same line connected in series, to columns made up of electrodes (203) etched in the form of columns, and to the electrode (301) which is common to all the pixels of the device. Another solution consists in addressing each pixel individually by circuits located under the micro-mirrors, on the plane of the silicon surface of the substrate (200).
Claims
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR01/07194 | 2001-06-01 | ||
| FR0107194A FR2825479B1 (en) | 2001-06-01 | 2001-06-01 | REFLECTION LIGHT MODULATION DEVICE AND MANUFACTURING METHOD THEREOF |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2002096795A1 true WO2002096795A1 (en) | 2002-12-05 |
Family
ID=8863857
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/FR2002/001777 Ceased WO2002096795A1 (en) | 2001-06-01 | 2002-05-28 | Device for light modulation by reflection and method for the production thereof |
Country Status (2)
| Country | Link |
|---|---|
| FR (1) | FR2825479B1 (en) |
| WO (1) | WO2002096795A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107565252A (en) * | 2017-08-23 | 2018-01-09 | 河南机电职业学院 | A kind of preparation method of micro-nano overarm arm configuration spring type contactor |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06160750A (en) * | 1992-11-20 | 1994-06-07 | Canon Inc | Microactuator, optical deflector and optical scanning device |
| EP0614101A2 (en) * | 1993-02-03 | 1994-09-07 | Canon Kabushiki Kaisha | Optical deflector and method of manufacturing the same |
| US6046840A (en) * | 1995-06-19 | 2000-04-04 | Reflectivity, Inc. | Double substrate reflective spatial light modulator with self-limiting micro-mechanical elements |
-
2001
- 2001-06-01 FR FR0107194A patent/FR2825479B1/en not_active Expired - Fee Related
-
2002
- 2002-05-28 WO PCT/FR2002/001777 patent/WO2002096795A1/en not_active Ceased
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06160750A (en) * | 1992-11-20 | 1994-06-07 | Canon Inc | Microactuator, optical deflector and optical scanning device |
| EP0614101A2 (en) * | 1993-02-03 | 1994-09-07 | Canon Kabushiki Kaisha | Optical deflector and method of manufacturing the same |
| US6046840A (en) * | 1995-06-19 | 2000-04-04 | Reflectivity, Inc. | Double substrate reflective spatial light modulator with self-limiting micro-mechanical elements |
Non-Patent Citations (1)
| Title |
|---|
| PATENT ABSTRACTS OF JAPAN vol. 018, no. 481 (P - 1797) 7 September 1994 (1994-09-07) * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107565252A (en) * | 2017-08-23 | 2018-01-09 | 河南机电职业学院 | A kind of preparation method of micro-nano overarm arm configuration spring type contactor |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2825479A1 (en) | 2002-12-06 |
| FR2825479B1 (en) | 2003-08-29 |
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