WO2002095434A1 - Magnetic sensor based on ballistic magnetoresistance using a pinhole multilayer system - Google Patents
Magnetic sensor based on ballistic magnetoresistance using a pinhole multilayer system Download PDFInfo
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- WO2002095434A1 WO2002095434A1 PCT/ES2002/000222 ES0200222W WO02095434A1 WO 2002095434 A1 WO2002095434 A1 WO 2002095434A1 ES 0200222 W ES0200222 W ES 0200222W WO 02095434 A1 WO02095434 A1 WO 02095434A1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/3227—Exchange coupling via one or more magnetisable ultrathin or granular films
Definitions
- the present invention describes a method for creating stable nanometer-sized electrical contacts and having a high magnetoresistance value (variation of the resistance to the passage of an electric current that an electric conductor presents before the application of a magnetic field external) before low intensity magnetic fields.
- the magnetoresistive systems based on the ballistic magnetoresistance (BMRS) mentioned above mainly consist of two magnetic reservoirs joined by an electrical contact of nanometric size (fig. 1), of being smaller or similar in size to the wavelength of the electron.
- This invention describes a system in which it is possible to make said contact between two magnetic reservoirs that meets the desired size and stability requirements.
- the use of conductive multilayers is proposed (a in fig. 2), covered by a layer of non-conductive or insulating material (b in fig. 2).
- the thickness of this layer can be of similar or smaller dimensions to the wavelength of the electron.
- Said insulating layer has defects (pinholes) in the sense that at a certain point (c in fig. 2) (or points) said layer is conductive. These defects may be intrinsic to the form of preparation of the insulating layer or may be induced subsequently.
- conductive material (d) On this defect is deposited (by evaporation of metal or electrochemically, to name some of the possible methods) conductive material (d), so that it is possible to circulate an electric current between the conductive layers and this material deposited through the defect of the insulating layer.
- the dimensions of the insulation layer defect are determined by the conditions in which the device is to be used, or by the electrical resistance that this has to have, but in general it can be said that they must be such that the conduction between the multilayers and the material deposited on said defect must be ballistic.
- This configuration has all the elements required by a BMRS sensor (the two reservoirs and the constriction) and provides a rigidity such that the system is indefinitely stable and therefore can be applied in any type of device.
- FIGURES The simplest configuration is shown as well as the necessary elements of a BMRS sensor (magnetic sensor based on ballistic magnetoresistance). These elements are two magnetic reservoir (R) joined by a constriction (C) that can be magnetic or not and of conductive properties to be determined depending on the application.
- Figure 2 Scheme of the system proposed in the present invention.
- the samples used consist of a multilayer system described below: a silicon substrate so as to provide rigidity to the sample; a silicon thermal oxide layer that electrically insulates the silicon substrate from the following conductive layers; a combination of layers of magnetic and non-magnetic conductive materials, these layers make the electrical resistance of this combination of layers considerably less than the pinhole resistance as well as help determine the magnetization of the layer immediately before the oxide layer; Finally a layer of nickel. An aluminum layer is deposited on this last layer of nickel. It has been experimented with different thicknesses of aluminum, ranging from a few tenths of nanometers to several nanometers.
- the sample is immersed in an electrolyte, usually a solution of nickel sulfate.
- a voltage is applied between the layers conductors and an electrode immersed in the solution.
- the nickel ions migrate to the places that occupy these defects and an electrodeposition of nickel occurs in those places.
- the surface of the aluminum oxide exposed to the electrolyte is usually limited so that it is possible to control the number of defects (usually one).
- Figure 4 shows the results of the experiments performed in the aforementioned laboratory.
- Figure (a) shows how there is a relaxation of the electrical resistance of the sample as well as a dependence on the applied magnetic field.
- Figure (b) shows the dependence with the magnetic field after normalizing the data in figure (a).
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Hall/Mr Elements (AREA)
Abstract
Description
SENSOR MAGNÉTICO BASADO EN MAGNETORESISTENCIA BALÍSTICA MEDIANTE MULTICAPAS Y PINHOLESMAGNETIC SENSOR BASED ON BALLISTIC MAGNETORESISTENCE THROUGH MULTICAPAS AND PINHOLES
OBJETO DE LA INVENCIÓN La presente invención describe un método para crear contactos eléctricos de tamaño nanométrico estables y que presentan un alto valor de la magnetoresistencia (variación de la resistencia al paso de una corriente eléctrica que presenta un conductor eléctrico ante la aplicación de un campo magnético externo) ante campos magnéticos de baja intensidad.OBJECT OF THE INVENTION The present invention describes a method for creating stable nanometer-sized electrical contacts and having a high magnetoresistance value (variation of the resistance to the passage of an electric current that an electric conductor presents before the application of a magnetic field external) before low intensity magnetic fields.
ANTECEDENTES DE LA INVENCIÓNBACKGROUND OF THE INVENTION
La necesidad de sensores de campo magnético de mayor sensibilidad, resolución y de mayor velocidad de respuesta ha dado lugar a un gran interés, científico y tecnológico, por sistemas que cambian el valor de su resistencia eléctrica ante la presencia de campos magnéticos externos.The need for magnetic field sensors with greater sensitivity, resolution and higher response speed has given rise to great interest, scientific and technological, for systems that change the value of their electrical resistance in the presence of external magnetic fields.
Existe una gran variedad de sistemas que presentan dicho efecto magnetoresistivo, y con un amplio espectro en los valores de respuesta.There is a wide variety of systems that have such a magnetoresistive effect, and with a wide spectrum of response values.
Un gran avance en el desarrollo de sensores de campo magnético basados en la magnetoresistencia viene dado por el descubrimiento de la Magnetoresistencia Balística (N. García, M. Muñoz and Y.-W. Zhao. Magnetoresistance in excess of 200% in Ballistic Ni Nanocontacts at Room Temperatura and 100 Oe. "Physical Review Letters", Volume 82, number 14 pag 2923 (1999); SENSOR MAGNÉTICO PRODUCIDO POR UNA CONSTRICCIÓN. Solicitud de Patente Española P9802091. Solicitud internacional WO 00/22448.). Dichos sistemas presentan valores de la magnetoresistencia de hasta un 300% a temperatura ambiente y campos magnéticos de 100 Oe. El único inconveniente de estos sistemas es la inestabilidad mecánica que presentan lo que los hace operativos a lo mas durante algunos minutos. El problema de la estabilidad se mejoro mediante la producción de los nanocontactos mediante electroquímica (N. García, H. Rohrer, I. G. Saveliev and Y.-W. Zhao. Negative and Positive Magnetoresistance Manipulation in an Electrodeposited Nanometer Ni Contact. "Physical Review Letters", Volume 85, number 14 pag 3053 (2000); Manipulación de la magnetoresistencia mediante la aplicación de pulsos de corriente y campo magnético externo. Solicitud de patente española P200000411.) Estos contactos son estables durante días, pero aun así están lejos de la estabilidad deseada en un dispositivo.A breakthrough in the development of magnetic field sensors based on magnetoresistance is given by the discovery of Ballistic Magnetoresistance (N. García, M. Muñoz and Y.- W. Zhao. Magnetoresistance in excess of 200% in Ballistic Ni Nanocontacts at Room Temperature and 100 Oe. "Physical Review Letters", Volume 82, number 14 pag 2923 (1999); MAGNETIC SENSOR PRODUCED BY A CONSTRUCTION. Spanish Patent Application P9802091. International Application WO 00/22448.). These systems have magnetoresistance values of up to 300% at room temperature and magnetic fields of 100 Oe. The only drawback of these systems is the mechanical instability that present what makes them operational at most for a few minutes. The stability problem was improved by the production of nanocontacts by electrochemistry (N. García, H. Rohrer, IG Saveliev and Y.- W. Zhao. Negative and Positive Magnetoresistance Manipulation in an Electrodeposited Nanometer Ni Contact. "Physical Review Letters", Volume 85, number 14 pag 3053 (2000); Magnetoresistance manipulation by applying current pulses and external magnetic field. Spanish patent application P200000411.) These contacts are stable for days, but still far from the desired stability in a device.
En la presente invención se presenta un método mediante el cual es posible la fabricación de contactos eléctricos de tamaño nanométrico, estables y con gran respuesta magnetoresistiva.In the present invention a method is presented by which it is possible to manufacture electrical contacts of nanometric size, stable and with great magnetoresistive response.
DESCRIPCIÓN DE LA INVENCIÓNDESCRIPTION OF THE INVENTION
Los sistemas magnetoresistivos basados en la magnetoresistencia balística (BMRS) anteriormente citados constan fundamentalmente de dos reservoirs magnéticos unidos por un contacto eléctrico de tamaño nanométrico (fig. 1), de ser de dimensiones menores o similares a la de la longitud de onda del electrón.The magnetoresistive systems based on the ballistic magnetoresistance (BMRS) mentioned above mainly consist of two magnetic reservoirs joined by an electrical contact of nanometric size (fig. 1), of being smaller or similar in size to the wavelength of the electron.
Esta invención describe un sistema en el que es posible realizar dicho contacto entre dos reservoirs magnéticos que cumple los requisitos de tamaño y estabilidad deseada. Se propone el uso de multicapas conductoras (a en fig. 2), recubiertas por una capa de material no conductor o aislante(b en fig. 2). El grosor de esta capa puede ser de unas dimensiones similares o menores a la longitud de onda del electrón. Dicha capa aislante tiene defectos (pinholes) en el sentido de que en determinado punto (c en fig. 2) (o puntos) dicha capa es conductora. Estos defectos pueden ser intrínsecos a la forma de preparación de la capa aislante o pueden ser inducidos a posteriori.This invention describes a system in which it is possible to make said contact between two magnetic reservoirs that meets the desired size and stability requirements. The use of conductive multilayers is proposed (a in fig. 2), covered by a layer of non-conductive or insulating material (b in fig. 2). The thickness of this layer can be of similar or smaller dimensions to the wavelength of the electron. Said insulating layer has defects (pinholes) in the sense that at a certain point (c in fig. 2) (or points) said layer is conductive. These defects may be intrinsic to the form of preparation of the insulating layer or may be induced subsequently.
Sobre este defecto se deposita (mediante evaporación de metal o electroquímicamente, por citar algunos de los posibles métodos) material conductor (d), de manera que es posible el hacer circular una corriente eléctrica entre las capas conductoras y este material depositado a través del defecto de la capa aislante. Las dimensiones del defecto de la capa aislante vienen determinado por las condiciones en las que se quiera utilizar el dispositivo, o por la resistencia eléctrica que este haya de tener, pero en general se puede decir que han de ser tales que la conducción entre las multicapas y el material depositado sobre dicho defecto ha de ser balística.On this defect is deposited (by evaporation of metal or electrochemically, to name some of the possible methods) conductive material (d), so that it is possible to circulate an electric current between the conductive layers and this material deposited through the defect of the insulating layer. The dimensions of the insulation layer defect are determined by the conditions in which the device is to be used, or by the electrical resistance that this has to have, but in general it can be said that they must be such that the conduction between the multilayers and the material deposited on said defect must be ballistic.
Esta configuración tiene todos los elementos requeridos por un sensor BMRS (los dos reservoirs y la constricción) y proporciona una rigidez tal que el sistema es indefinidamente estable y por lo tanto se puede aplicar en cualquier tipo de dispositivo.This configuration has all the elements required by a BMRS sensor (the two reservoirs and the constriction) and provides a rigidity such that the system is indefinitely stable and therefore can be applied in any type of device.
DESCRIPCIÓN DE LAS FIGURAS Figura 1: Se muestra la configuración más sencilla así como los elementos necesarios de un sensor BMRS (sensor magnético basado en la magnetorresistencia balística). Estos elementos son dos reservoir magnéticos (R ) unidos por una constricción (C ) que puede ser magnética o no y de propiedades conductoras a determinar en función de la aplicación. Figura 2: Esquema del sistema propuesto en la presente invención. EnDESCRIPTION OF THE FIGURES Figure 1: The simplest configuration is shown as well as the necessary elements of a BMRS sensor (magnetic sensor based on ballistic magnetoresistance). These elements are two magnetic reservoir (R) joined by a constriction (C) that can be magnetic or not and of conductive properties to be determined depending on the application. Figure 2: Scheme of the system proposed in the present invention. In
(a) se representan las multicapas que puede ser una única capa o varias de ellas. En caso de ser varias de ellas pueden ser conductoras, aislantes o semiconductoras o una combinación de ellas. Así mismo se puede combinar las propiedades magnéticas de estas capas utilizando capas de materiales magnéticos blandos, materiales magnéticos duros o materiales no magnéticos. Mediante (b) se representa la capa que en principio se propone aislante pero podría utilizarse materiales semiconductores e incluso conductores. El defecto en esta capa viene representado por (c) y el material depositado a posteriori mediante (d). Figura 3: Imagen obtenida medíante Microscopio Electrónico de Barrido(a) the multilayers that can be a single layer or several of them are represented. If several of them can be conductive, insulating or semiconductor or a combination of them. Likewise, the magnetic properties of these layers can be combined using layers of soft magnetic materials, hard magnetic materials or non-magnetic materials. By means of (b) the layer that in principle is proposed is insulated but semiconductor and even conductive materials could be used. The defect in this layer is represented by (c) and the material deposited afterwards by (d). Figure 3: Image obtained through Scanning Electron Microscope
(SEM) del cluster (agregado) de material magnético depositado, mediante métodos electroquímicos, sobre la capa aislante en las muestras utilizadas para demostrar la viabilidad de la presente invención.(SEM) of the cluster (aggregate) of magnetic material deposited, by electrochemical methods, on the insulating layer in the samples used to demonstrate the viability of the present invention.
Figura 4: Resultados de las medidas realizadas en el Laboratorio de Física de Sistemas Pequeños y Nanotecnología en los que se pone de manifiesto la dependencia de la resistencia eléctrica del sistema aquí descrito en función del campo magnético aplicado. EJEMPLO DE REALIZACIÓNFigure 4: Results of the measurements carried out in the Laboratory of Physics of Small Systems and Nanotechnology in which the dependence of the electrical resistance of the system described here is shown, depending on the magnetic field applied. EXAMPLE OF REALIZATION
En el Laboratorio de Física de Sistemas Pequeños y Nanotecnología del Consejo Superior de Investigaciones Científicas se han realizado los experimentos previos que confirman la viabilidad del sistema anteriormente descrito.In the Laboratory of Physics of Small Systems and Nanotechnology of the Higher Council of Scientific Research, previous experiments have been carried out that confirm the viability of the system described above.
Las muestras utilizadas constan de un sistema de multicapas a continuación descrito: un substrato de silicio de forma que proporcione rigidez a la muestra; una capa de oxido térmico de silicio que aisla eléctricamente el substrato de silicio de las siguientes capas conductoras; una combinación de capas de materiales conductores magnéticos y no magnéticos, estas capas hacen que la resistencia eléctrica de esta combinación de capas sea considerablemente menor que la resistencia del pinhole así como ayudan a determinar la magnetización de la capa inmediatamente anterior a la capa de óxido; finalmente una capa de níquel. Sobre esta ultima capa de níquel se deposita una capa de aluminio. Se ha experimentado con distintos grosores de aluminio, variando desde unas décimas de nanómetros hasta varios nanómetros.The samples used consist of a multilayer system described below: a silicon substrate so as to provide rigidity to the sample; a silicon thermal oxide layer that electrically insulates the silicon substrate from the following conductive layers; a combination of layers of magnetic and non-magnetic conductive materials, these layers make the electrical resistance of this combination of layers considerably less than the pinhole resistance as well as help determine the magnetization of the layer immediately before the oxide layer; Finally a layer of nickel. An aluminum layer is deposited on this last layer of nickel. It has been experimented with different thicknesses of aluminum, ranging from a few tenths of nanometers to several nanometers.
Todas las anteriores capas se depositan sobre el óxido de silicio en un sistema de ultra alto vacío lo que hace que éstas sean de gran pureza química. Así mismo la orientación de la superficie del silicio y por tanto del oxido de silicio, es tal que las capas depositadas se pueden considerar perfectamente planas hasta niveles atómicos.All the previous layers are deposited on the silicon oxide in an ultra-high vacuum system which makes them of great chemical purity. Likewise, the orientation of the surface of the silicon and therefore of the silicon oxide is such that the deposited layers can be considered perfectly flat up to atomic levels.
Una vez depositadas todas las capas anteriormente citadas se han seguido dos métodos para transformar la capa de aluminio en oxido de aluminio. La primera es inyectar oxigeno en el sistema de ultra alto vacío, lo que permite controlar el nivel de oxidación del aluminio. Y la segunda, más rudimentaria pero igualmente funcional, es dejar el sistema expuesto al oxigeno atmosférico.Once all the aforementioned layers have been deposited, two methods have been followed to transform the aluminum layer into aluminum oxide. The first is to inject oxygen into the ultra-high vacuum system, which allows to control the oxidation level of aluminum. And the second, more rudimentary but equally functional, is to leave the system exposed to atmospheric oxygen.
El siguiente punto es inducir los pinholes en la capa de oxido de aluminio. Para ello se sumerge la muestra en un electrolito, habitualmente una disolución de sulfato de níquel. Se aplica un voltaje entre las capas conductoras y un electrodo sumergido en la disolución. De esta forma, si los defectos existen en la capa de oxido de aluminio, los iones de níquel migran a los lugares que ocupan dichos defectos y se produce una electrodeposición de níquel en esos lugares. Se suele limitar la superficie del oxido de aluminio expuesta al electrolito de manera que es posible controlar el numero de defectos (habitualmente uno).The next point is to induce the pinholes in the aluminum oxide layer. For this, the sample is immersed in an electrolyte, usually a solution of nickel sulfate. A voltage is applied between the layers conductors and an electrode immersed in the solution. Thus, if the defects exist in the aluminum oxide layer, the nickel ions migrate to the places that occupy these defects and an electrodeposition of nickel occurs in those places. The surface of the aluminum oxide exposed to the electrolyte is usually limited so that it is possible to control the number of defects (usually one).
Si dichos defectos no existen se pueden inducir aplicando un voltaje un poco mayor de forma que se produzca una ruptura eléctrica permanente. Se repite nuevamente el proceso anteriormente descrito y se deposita el níquel. En ocasiones después de la deposición de níquel se cambia el electrolito por una disolución de sulfato de cobre para depositar ahora cobre sobre el níquel lo que previene de la oxidación de este ultimo.If these defects do not exist, they can be induced by applying a slightly higher voltage so that a permanent electrical breakdown occurs. The process described above is repeated again and the nickel is deposited. Sometimes after the deposition of nickel, the electrolyte is exchanged for a solution of copper sulfate to deposit copper on the nickel, which prevents oxidation of the latter.
En la figura 4 se puede apreciar los resultados de los experimentos realizados en el laboratorio anteriormente mencionado. En la figura (a) se aprecia como existe una relajación de la resistencia eléctrica de la muestra así como una dependencia con el campo magnético aplicado. En la figura (b) se muestra la dependencia con el campo magnético tras normalizar los datos de la figura (a). Figure 4 shows the results of the experiments performed in the aforementioned laboratory. Figure (a) shows how there is a relaxation of the electrical resistance of the sample as well as a dependence on the applied magnetic field. Figure (b) shows the dependence with the magnetic field after normalizing the data in figure (a).
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Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
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| ES200101152 | 2001-05-21 | ||
| ES200101152 | 2001-05-21 |
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| WO2002095434A1 true WO2002095434A1 (en) | 2002-11-28 |
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| PCT/ES2002/000222 Ceased WO2002095434A1 (en) | 2001-05-21 | 2002-05-10 | Magnetic sensor based on ballistic magnetoresistance using a pinhole multilayer system |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004010442A1 (en) * | 2002-07-19 | 2004-01-29 | Consejo Superior De Investigaciones Científicas | Solid material comprising a structure of almost-completely-polarised electronic orbitals, method of obtaining same and use thereof in electronics and nanoelectronics |
| US6933042B2 (en) | 2003-07-30 | 2005-08-23 | Hitachi Global Storage Technologies Netherlands B.V. | Ballistic GMR structure using nanoconstruction in self pinned layers |
| US7180714B2 (en) | 2003-09-30 | 2007-02-20 | Hitachi Global Storage Technolgies Netherlands B.V. | Apparatus for providing a ballistic magnetoresistive sensor in a current perpendicular-to-plane mode |
| US7204013B2 (en) | 2003-07-29 | 2007-04-17 | Seagate Technology Llc | Method of manufacturing a magnetoresistive sensor |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1997047982A2 (en) * | 1996-06-12 | 1997-12-18 | Philips Electronics N.V. | A magneto-resistive magnetic field sensor |
| US6011674A (en) * | 1990-06-08 | 2000-01-04 | Hitachi, Ltd. | Magnetoresistance effect multilayer film with ferromagnetic film sublayers of different ferromagnetic material compositions |
-
2002
- 2002-05-10 WO PCT/ES2002/000222 patent/WO2002095434A1/en not_active Ceased
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6011674A (en) * | 1990-06-08 | 2000-01-04 | Hitachi, Ltd. | Magnetoresistance effect multilayer film with ferromagnetic film sublayers of different ferromagnetic material compositions |
| WO1997047982A2 (en) * | 1996-06-12 | 1997-12-18 | Philips Electronics N.V. | A magneto-resistive magnetic field sensor |
Non-Patent Citations (2)
| Title |
|---|
| GARCIA: "Conducting ballistic magnetoresistance and tunneling magnetoresistance: Pinholes and tunnel barriers", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS, vol. 77, no. 9, 28 August 2000 (2000-08-28), pages 1351 - 1353 * |
| MUNOZ ET AL.: "Ballistic magnetoresistance in a nanocontact between a Ni cluster and a magnetic thin film", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS, vol. 79, no. 18, 29 October 2001 (2001-10-29), pages 2946 - 2948 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004010442A1 (en) * | 2002-07-19 | 2004-01-29 | Consejo Superior De Investigaciones Científicas | Solid material comprising a structure of almost-completely-polarised electronic orbitals, method of obtaining same and use thereof in electronics and nanoelectronics |
| US7204013B2 (en) | 2003-07-29 | 2007-04-17 | Seagate Technology Llc | Method of manufacturing a magnetoresistive sensor |
| US7567411B2 (en) | 2003-07-29 | 2009-07-28 | Seagate Technology Llc | Magnetoresistive sensor |
| US6933042B2 (en) | 2003-07-30 | 2005-08-23 | Hitachi Global Storage Technologies Netherlands B.V. | Ballistic GMR structure using nanoconstruction in self pinned layers |
| US7180714B2 (en) | 2003-09-30 | 2007-02-20 | Hitachi Global Storage Technolgies Netherlands B.V. | Apparatus for providing a ballistic magnetoresistive sensor in a current perpendicular-to-plane mode |
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