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WO2002086183A1 - Ensembles soudes par diffusion et procedes de fabrication - Google Patents

Ensembles soudes par diffusion et procedes de fabrication Download PDF

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Publication number
WO2002086183A1
WO2002086183A1 PCT/US2002/011686 US0211686W WO02086183A1 WO 2002086183 A1 WO2002086183 A1 WO 2002086183A1 US 0211686 W US0211686 W US 0211686W WO 02086183 A1 WO02086183 A1 WO 02086183A1
Authority
WO
WIPO (PCT)
Prior art keywords
target
blank
target blank
backing plate
assembly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2002/011686
Other languages
English (en)
Inventor
Josh W. Misner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell International Inc
Original Assignee
Honeywell International Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell International Inc filed Critical Honeywell International Inc
Priority to US10/475,251 priority Critical patent/US20040129559A1/en
Publication of WO2002086183A1 publication Critical patent/WO2002086183A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/22—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating taking account of the properties of the materials to be welded
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)

Definitions

  • the present application pertains to diffusion bonded PVD target assemblies and fabrication methods.
  • Diffusion bonding of a cobalt target blank or a target blank of another material can be performed instead of solder bonding.
  • the temperatures typically used for diffusion bonding can produce an undesirable change in a crystal structure of a target blank.
  • Cobalt is ferromagnetic and can resist magnetic field penetration during sputtering. Accordingly, methods have been developed to reduce the anisotropic nature of the magnetic properties for cobalt to provide an improved pass through flux (PTF).
  • PTF pass through flux
  • cobalt sputtering targets are typically somewhat thin which results in relatively short service life.
  • PVD target blank wherein a majority crystal structure of the target blank includes a hexagonal closest packing (HCP) structure rather than a face center cubic (FCC) structure.
  • HCP hexagonal closest packing
  • FCC face center cubic
  • transition to a FCC structure significantly reduces the PTF of a PVD target thereby reducing sputtering performance and overall life of the target.
  • a cobalt target diffusion bonded to a backing plate may operate at greater than 4 kilowatts of power, allowing higher rates of deposition. Retaining the high PTF characteristics of the HCP structure in addition to diffusion bonding may offer higher rates of deposition as well as an extended target life, using more of the target material and reducing the cost of production.
  • a diffusion bonded PVD target assembly includes a target blank bonded directly to a backing plate, a majority crystal structure of the target blank comprising a HCP structure.
  • the target blank can consist essentially of cobalt or a cobalt alloy with cobalt as the predominate metal.
  • the backing plate can consist essentially of aluminum, an aluminum alloy with aluminum as the predominate metal, copper, or a copper alloy with copper as the predominate metal.
  • the target assembly can exhibit a high PTF, preferably at least about 60%.
  • a diffusion bonded PVD target assembly includes a target blank bonded to a backing plate, the target blank comprising a target surface, a majority crystal structure of the target blank comprising a HCP structure, and a majority crystallographic orientation of the target blank comprising a ⁇ 002 ⁇ HCP plane that is substantially parallel to the target surface within a test region.
  • a PVD target fabrication method includes diffusion bonding a target blank to a backing plate and forming a target assembly, a majority crystal structure of the target blank comprising a HCP structure; transitioning at least some of the HCP structure to a non-HCP structure; and restoring a majority of the non-HCP structure to the HCP structure.
  • the transitioning can include hot pressing the target blank and backing plate during the diffusion bonding at a temperature exceeding a HCP to non-HCP transition temperature of the target blank.
  • the non-HCP structure can be a FCC structure.
  • the target blank can exhibit a high PTF both before the diffusion bonding and after the restoring.
  • a PVD target fabrication method includes diffusion bonding a target blank to a backing plate at a bonding temperature and forming a target assembly; and cooling the target blank from
  • the bonding temperature to a room temperature of from about 10 °C to about 30
  • the cooling rate can be less than or equal to about 5
  • Figure 1 shows a sectional view of a target/backing plate construction with a target formed in accordance with methodology of the present invention.
  • the construction corresponds to a large ENDURATM configuration.
  • Figure 2 is a top view of the target/backing plate construction of
  • a PVD target fabrication method includes diffusion bonding a target blank to a backing plate and forming a target assembly, a majority crystal structure of the target blank including a HCP structure.
  • the method includes transitioning at least some of the HCP structure to a non-HCP structure and then restoring a majority of the non-HCP structure back to the HCP structure.
  • Any target blank known to those skilled in the art may be used for the target blank having a HCP structure as a majority crystal structure.
  • One example of such a target blank and a method for producing the same is describe in U. S. Patent Application No. 09/139,240 filed August 25, 1998 and titled "High Purity Cobalt Sputter Target and Process of Manufacturing Same".
  • the transitioning of the HCP structure can include hot pressing the target blank and backing plate during the diffusion bonding at a temperature exceeding a HCP to non-HCP transition temperature of the target blank.
  • the non-HCP structure can include a FCC structure.
  • HCP to FCC transition temperature is about 412 °C.
  • transition temperature may apply for other materials. Any diffusion bonding process known to those skilled in the art or later developed can be used to accomplish the diffusion bonding portion.
  • the target blank exhibits a high PTF both before the diffusion bonding and after the restoring.
  • PTF can be measured using conventional apparatuses that place a material in a magnetic field and measure the resulting flux passing through the material.
  • PTF is measured in the Z-direction, which is normal to the target surface.
  • PTF is expressed in percent and is equal to the mean magnetic field magnitude, in Gauss, detected passing through the target in a test region divided by the mean magnitude of the magnetic source in the test region, in Gauss.
  • a non-magnetic, non-ferromagnetic material such as aluminum generally exhibits a PTF of about 100%.
  • One example of measuring PTF is described in U. S. Patent Application No. 09/631 ,856 filed August 3, 2000 and titled "Method and Apparatus for Determining the Pass Through Flux of Magnetic Materials".
  • PTF is defined in relation to material thickness.
  • the minimum PTF for a high PTF material is determined using the formula 85 - (100 x h), where h is target thickness measured in inches.
  • h is target thickness measured in inches.
  • the minimum PTF for a 0.25 inch (0.64 centimeter) target to be considered high PTF is 60%.
  • the minimum PTF for a 0.1 inch (0.25 centimeter) target to be considered high PTF is 75%.
  • PVD targets most frequently have a thickness of about 0.1 inch to about 0.25 inch, accordingly, a PVD target blank preferably exhibits a PTF of at least about 60%.
  • the test region can define a representative test region. Establishing a majority orientation within a representative test region will tend to indicate the majority orientation is present throughout the target blank.
  • the target surface can be a sputtering surface of the target assembly and the ⁇ 002 ⁇ HCP plane can be substantially parallel to the sputtering surface across the entirety of the sputtering surface.
  • substantially parallel is defined to include a ⁇ 002 ⁇ HCP plane that might not be precisely parallel to the target surface, but such is the most probable orientation within the detection limits of the measurement technique.
  • the method includes restoring a majority of the non-
  • Such restoring can include cooling the target blank from a diffusion bonding temperature to a room temperature of from
  • the PTF can change by about 0%.
  • a cooling rate of less than or equal to about 5 °C per minute has
  • the diffusion bonding temperature can be greater than 412 °C, the
  • the diffusion bonding temperature is
  • diffusion bonding temperature could be about
  • the target blank preferably consists essentially of cobalt or a cobalt alloy with cobalt as the predominate metal.
  • the target blank most preferably consists of cobalt.
  • the backing plate preferably consists essentially of aluminum, an aluminum alloy with aluminum as the predominate metal, copper, or a copper alloy with copper as the predominate metal.
  • the diffusion bond can exhibit a bond strength of greater than 11 kilopounds per square inch (ksi) (76 megaPascals (MPa)). More preferably, the bond strength is greater than about 14 ksi (97 MPa) and most preferably greater than about 20 ksi (138 MPa).
  • a PVD target fabrication method includes diffusion bonding a target blank to a backing plate at a bonding temperature and forming a target assembly.
  • the method includes cooling the target blank from the bonding temperature to a room temperature of from about
  • the target blank changes by greater than -10% in comparison to the target blank PTF before the diffusion bonding.
  • the target blank exhibits a high PTF both before the diffusion bonding and after the cooling.
  • a PVD target fabrication method includes diffusion bonding a cobalt-comprising target blank to an aluminum-comprising backing plate at a bonding temperature greater than 412
  • the target blank exhibiting a PTF of at least
  • the method includes cooling the target
  • the target blank can include a target surface, a majority crystal structure of the target blank can include a HCP structure, and a majority crystallographic orientation of the target blank can include a ⁇ 002 ⁇ HCP plane that is substantially parallel to the target surface within a test region.
  • aspects of the present invention also include the various PVD target assemblies produced by the methods described herein. Additionally, one aspect of the invention includes a diffusion bonded PVD target assembly having a target blank bonded directly to a backing plate, a majority crystal structure of the target blank comprising a HCP structure.
  • the target blank can include a magnetic material. Cobalt is one example of a magnetic material and is also ferromagnetic.
  • the target assembly can lack an interlayer between the target blank and the backing plate.
  • interlayers have been used between a sputtering target blank and a backing plate to enhance bond strength from diffusion bonding. Notably, adequate bond strength can be achieved in the various aspects of the present invention without use of an interlayer. However, use of an interlayer as known to those skilled in the art might still be used in some aspects of the present invention.
  • a target blank is diffusion bonded "directly to" a backing plate when it does not take advantage of any bond strength enhancements potentially afforded by an interlayer.
  • Bond strength enhancements can be provided by an interlayer having a composition different from both the target blank and the backing plate.
  • a cobalt target diffusion bonded to an aluminum, aluminum alloy, copper, or copper alloy backing plate can include a bond enhancing interlayer containing silver, gold, palladium, platinum, and their alloys.
  • a target blank diffusion bonded "directly to" a backing plate does not take advantage of such bond enhancing interlayers having compositions different from both the target blank and the backing plate.
  • diffusion bonding "directly to" a backing plate includes using interlayers that do not afford bond strength enhancements.
  • a backing plate might be a multilayer structure, such as multiple aluminum or aluminum alloy layers combined together.
  • a target blank diffusion bonded to such a multilayer backing plate is still considered as bonded directly to the backing plate despite the presence of a backing plate layer between the target blank and the remainder of the backing plate.
  • the target assembly may be further specified as lacking any interlayer between the target blank and the backing plate to indicate a single layer target blank bonded directly to a single layer backing plate.
  • a diffusion bonded PVD target assembly includes a target blank bonded directly to a backing plate, the target blank consisting essentially of cobalt or a cobalt alloy, with cobalt as the predominant metal and exhibiting a high PTF.
  • the term "high PTF" is defined relative to the thickness of magnetic material.
  • the PVD target assembly can exhibit a PTF of at least about 60%.
  • the backing plate can consist essentially of aluminum, an aluminum alloy with aluminum as the predominant metal, copper, or a copper alloy with copper as the predominant metal.
  • a diffusion bonded PVD target assembly includes a target blank bonded to a backing plate, the target blank including a target surface and a magnetic material, a majority crystal structure of the target blank including a HCP structure, and a majority crystallographic orientation of the target blank including a ⁇ 002 ⁇ HCP plane that is substantially parallel to the target surface within a test region.
  • the target blank can be bonded directly to a backing plate.
  • the PVD target assembly can exhibit a high PTF.
  • the methods described herein for fabricating a PVD target assembly can further include measures known to those skilled in the art as beneficial in the context of diffusion bonding.
  • scrolling of the target blank can be performed prior to diffusion bonding.
  • grit blasting can be used to roughen the surface of the target blank prior to diffusion bonding.
  • Aluminum comprises a preferred backing plate material due to the low cost of materials and its light weight.
  • backing plates of other materials can be used in the various aspects of the invention.
  • Higher or lower diffusion bonding temperatures might be used with backing plates of other materials. For example, a diffusion bonding temperature greater
  • target blanks other than those consisting of cobalt can
  • cobalt alloys including without limitation silicon and/or titanium, may be suitable.
  • Other combinations of target blank and backing plate materials may benefit from the principles of the various aspects of the invention described herein.
  • the surface of a cobalt target blank having a high PTF was roughened by grit blasting to a roughness greater than 250 RA.
  • the blank had a purity of at least 99.95 weight percent Co and an average grain size of less than about 100 microns.
  • the blank was etched in a solution of dilute (less than 5%) sulfuric acid before being mated to a 6061 -T4 aluminum backing plate.
  • the assembly was placed in a hot isostatic press (or a vacuum hot press) and the
  • the temperature could be any temperature
  • FIG. 1 An exemplary backing plate/target assembly encompassed by the present invention is shown in Figs. 1 and 2 as assembly 30.
  • Assembly 30 comprises a backing plate 32 bonded to a target blank 34.
  • Backing plate 32 and target blank 34 join at an interface 56, which can comprise, for example, a diffusion bond between the backing plate and target blank.
  • Target blank 34 can comprise, for example, a cobalt target blank.
  • Backing plate 32 and target blank 34 can comprise any of numerous configurations, with the shown configuration being exemplary.
  • Backing plate 32 and target 34 can comprise, for example, an ENDURATM configuration, and accordingly can comprise a round outer periphery.
  • Fig. 5 shows assembly 30 in a top-view, and illustrates the exemplary round outer periphery configuration.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

L'invention concerne un ensemble (30) cible PVD soudé par diffusion comprenant une ébauche cible (34) soudée directement à un support (32), une structure cristalline majoritaire de l'ébauche cible comprenant une structure HCP. L'ébauche cible comprend du cobalt, le support pouvant comporter un alliage d'aluminium ou de cuivre. L'ensemble cible peut présenter un flux traversant (PTF) élevé en fonction de l'épaisseur, par exemple au moins 60%. Un procédé de fabrication cible PVD consiste notamment à souder par diffusion une ébauche cible sur un support, une structure cristalline majoritaire de l'ébauche cible comprenant une structure HCP; à permettre la transition d'au moins une partie de la structure HCP vers une structure non-HCP; et à rétablir une majorité de la structure non-HCP en structure HCP. La transition peut consister à presser à chaud l'ébauche cible et le support à une température supérieure à une température de transition HCP à non-HCP de l'ébauche cible. Le rétablissement peut comporter le refroidissement à vitesse réduite spécifiée.
PCT/US2002/011686 2001-04-19 2002-04-12 Ensembles soudes par diffusion et procedes de fabrication Ceased WO2002086183A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US10/475,251 US20040129559A1 (en) 2002-04-12 2002-04-12 Diffusion bonded assemblies and fabrication methods

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US28565801P 2001-04-19 2001-04-19
US60/285,658 2001-04-19

Publications (1)

Publication Number Publication Date
WO2002086183A1 true WO2002086183A1 (fr) 2002-10-31

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PCT/US2002/011686 Ceased WO2002086183A1 (fr) 2001-04-19 2002-04-12 Ensembles soudes par diffusion et procedes de fabrication
PCT/US2002/012080 Ceased WO2002086181A2 (fr) 2001-04-19 2002-04-19 Ensembles soudes par diffusion et procedes de fabrication

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7041204B1 (en) 2000-10-27 2006-05-09 Honeywell International Inc. Physical vapor deposition components and methods of formation
CN103801820A (zh) * 2012-11-13 2014-05-21 宁波江丰电子材料有限公司 钽靶材和铝背板的热等静压扩散焊焊接方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5658442A (en) * 1996-03-07 1997-08-19 Applied Materials, Inc. Target and dark space shield for a physical vapor deposition system
US6071389A (en) * 1998-08-21 2000-06-06 Tosoh Smd, Inc. Diffusion bonded sputter target assembly and method of making

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5658442A (en) * 1996-03-07 1997-08-19 Applied Materials, Inc. Target and dark space shield for a physical vapor deposition system
US6071389A (en) * 1998-08-21 2000-06-06 Tosoh Smd, Inc. Diffusion bonded sputter target assembly and method of making

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7041204B1 (en) 2000-10-27 2006-05-09 Honeywell International Inc. Physical vapor deposition components and methods of formation
CN103801820A (zh) * 2012-11-13 2014-05-21 宁波江丰电子材料有限公司 钽靶材和铝背板的热等静压扩散焊焊接方法

Also Published As

Publication number Publication date
WO2002086181A2 (fr) 2002-10-31

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