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WO2002075344A3 - Halbleiterelement mit einem semimagnetischen kontakt - Google Patents

Halbleiterelement mit einem semimagnetischen kontakt Download PDF

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Publication number
WO2002075344A3
WO2002075344A3 PCT/DE2002/000989 DE0200989W WO02075344A3 WO 2002075344 A3 WO2002075344 A3 WO 2002075344A3 DE 0200989 W DE0200989 W DE 0200989W WO 02075344 A3 WO02075344 A3 WO 02075344A3
Authority
WO
WIPO (PCT)
Prior art keywords
contact
semimagnetic
spin
semiconductor element
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/DE2002/000989
Other languages
English (en)
French (fr)
Other versions
WO2002075344A2 (de
Inventor
Laurens Molenkamp
Georg Schmidt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Priority to DE10291108T priority Critical patent/DE10291108B4/de
Priority to KR1020037012163A priority patent/KR100583688B1/ko
Priority to JP2002573700A priority patent/JP4058344B2/ja
Publication of WO2002075344A2 publication Critical patent/WO2002075344A2/de
Publication of WO2002075344A3 publication Critical patent/WO2002075344A3/de
Anticipated expiration legal-status Critical
Priority to US10/667,730 priority patent/US6963096B2/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/385—Devices using spin-polarised carriers

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
  • Measuring Magnetic Variables (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Magnetic Heads (AREA)
  • Bipolar Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

Die Erfindung betrifft ein magnetoresistives Halbleiterelement, umfassend einen ersten Kontakt 1 und einen zweiten Kontakt 3, sowie eine zwischen erstem und zweitem Kontakt angeordnete Schicht 2 eines nicht magnetischen Halbleiters, wobei der erste Kontakt 1 aus einem semimagnetischen Material besteht. Als semimagnetisches Material werden stark paramagnetische Materialien verwendet, deren Elektronenspins ohne eine Wirkung eines äußeren Magnetfeldes keine Vorzugsrichtung aufweisen. Unter Einwirkung eines äußeren Magnetfeldes werden die Elektronen im ersten Kontakt 1 spinpolarisiert. Hierdurch kommt es bei Anlegen einer Spannung zur Injektion spinpolarisierter Elektronen in den nichtmagnetischen Halbleiter 2. Dadurch kann im nichtmagnetischen Halbleiter nur noch einer der Spinkanäle für den Transport der Ladungsträger verwendet werden, so dass ein positiver magnetoresistiver Effekt erhalten wird.
PCT/DE2002/000989 2001-03-20 2002-03-19 Halbleiterelement mit einem semimagnetischen kontakt Ceased WO2002075344A2 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
DE10291108T DE10291108B4 (de) 2001-03-20 2002-03-19 Magnetoresistives Halbleiterbauelement mit einem semimagnetischen Kontakt, sowie Speicherelement und magnetischer Sensor
KR1020037012163A KR100583688B1 (ko) 2001-03-20 2002-03-19 반자성 콘택을 구비한 반도체 소자
JP2002573700A JP4058344B2 (ja) 2001-03-20 2002-03-19 半導体接点を備える半導体素子
US10/667,730 US6963096B2 (en) 2001-03-20 2003-09-22 Semiconductor element having a semi-magnetic contact

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE10113495 2001-03-20
DE10113495.9 2001-03-20
DE10114963A DE10114963A1 (de) 2001-03-20 2001-03-27 Halbleiterelement mit einem semimagnetischen Kontakt
DE10114963.8 2001-03-27

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US10/667,730 Continuation US6963096B2 (en) 2001-03-20 2003-09-22 Semiconductor element having a semi-magnetic contact

Publications (2)

Publication Number Publication Date
WO2002075344A2 WO2002075344A2 (de) 2002-09-26
WO2002075344A3 true WO2002075344A3 (de) 2002-11-14

Family

ID=26008839

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2002/000989 Ceased WO2002075344A2 (de) 2001-03-20 2002-03-19 Halbleiterelement mit einem semimagnetischen kontakt

Country Status (7)

Country Link
US (1) US6963096B2 (de)
JP (1) JP4058344B2 (de)
KR (1) KR100583688B1 (de)
CN (1) CN100390561C (de)
DE (2) DE10114963A1 (de)
TW (1) TW571450B (de)
WO (1) WO2002075344A2 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7598555B1 (en) 2003-08-22 2009-10-06 International Business Machines Corporation MgO tunnel barriers and method of formation
US7274080B1 (en) * 2003-08-22 2007-09-25 International Business Machines Corporation MgO-based tunnel spin injectors
US7252852B1 (en) 2003-12-12 2007-08-07 International Business Machines Corporation Mg-Zn oxide tunnel barriers and method of formation
FR2871280A1 (fr) * 2004-06-03 2005-12-09 Spintron Sa Memoire magnetique a canal de confinement
US7270896B2 (en) 2004-07-02 2007-09-18 International Business Machines Corporation High performance magnetic tunnel barriers with amorphous materials
US7357995B2 (en) 2004-07-02 2008-04-15 International Business Machines Corporation Magnetic tunnel barriers and associated magnetic tunnel junctions with high tunneling magnetoresistance
JP2006086476A (ja) * 2004-09-17 2006-03-30 Toshiba Corp 磁気記録素子および磁気記録装置
US7300711B2 (en) 2004-10-29 2007-11-27 International Business Machines Corporation Magnetic tunnel junctions with high tunneling magnetoresistance using non-bcc magnetic materials
US7351483B2 (en) 2004-11-10 2008-04-01 International Business Machines Corporation Magnetic tunnel junctions using amorphous materials as reference and free layers
US7626236B2 (en) * 2005-06-28 2009-12-01 Purdue Research Foundation Transistor including paramagnetic impurities and having anti-parallel ferromagnetic contacts
WO2009102577A1 (en) * 2008-02-13 2009-08-20 University Of Delaware Electromagnetic wave detection methods and apparatus
JP2009200351A (ja) * 2008-02-22 2009-09-03 Tdk Corp 半導体スピンデバイス及びスピンｆｅｔ
DE102008026241B4 (de) * 2008-05-30 2016-12-01 Johannes-Gutenberg-Universität Mainz Inhomogene Verbindungen mit hohem Magnetwiderstand und Verwendung
KR101598542B1 (ko) * 2009-01-13 2016-02-29 삼성전자주식회사 스핀 전계효과 트랜지스터를 이용한 논리소자
JP2010199320A (ja) * 2009-02-25 2010-09-09 Tdk Corp シリコンスピン伝導素子の製造方法及びシリコンスピン伝導素子
US8941379B2 (en) * 2009-05-14 2015-01-27 University Of Delaware Electromagnetic wave detection systems and methods
CN102315255B (zh) * 2010-07-07 2013-10-16 中国科学院物理研究所 一种自旋场效应晶体管及其磁性存储器
US9136398B2 (en) * 2011-02-21 2015-09-15 Northwestern University Bipolar magnetic junction transistor with magnetoamplification and applications of same
CN104603951B (zh) * 2012-08-14 2017-05-24 国立研究开发法人科学技术振兴机构 自旋极化晶体管元件
DE102014203317A1 (de) 2014-02-25 2015-08-27 Robert Bosch Gmbh Sensorvorrichtung, Herstellungsverfahren für eine Sensorvorrichtung mit mindestens einem Magnetkern und Verfahren zum Ermitteln einer Feldstärke eines Magnetfelds in mindestens einer Raumrichtung
DE102017001963A1 (de) 2017-03-01 2018-09-06 Forschungsverbund Berlin E.V. Tunnelwiderstands-Bauelement und Verfahren zu dessen Herstellung
CN113176483B (zh) * 2020-01-09 2023-04-28 国家纳米科学中心 用于自旋场效应晶体管的自旋信号测量方法及系统
CN112799240B (zh) * 2020-12-30 2022-09-16 广东省科学院半导体研究所 磁光器件及其制作方法
US12038308B2 (en) * 2021-03-24 2024-07-16 Analog Devices International Unlimited Company Magnetic sensor system having an initialization conductor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998025263A1 (en) * 1996-12-02 1998-06-11 Koninklijke Philips Electronics N.V. Lateral magneto-electronic device exploiting a quasi-two-dimensional electron gas

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69331895T2 (de) * 1992-12-29 2002-12-19 Eastman Kodak Co., Rochester Magnetoresistiver Magnetfeldsensor mit sehr langem Wirkbereich
US5654566A (en) * 1995-04-21 1997-08-05 Johnson; Mark B. Magnetic spin injected field effect transistor and method of operation
US5565695A (en) * 1995-04-21 1996-10-15 Johnson; Mark B. Magnetic spin transistor hybrid circuit element
JP3207094B2 (ja) * 1995-08-21 2001-09-10 松下電器産業株式会社 磁気抵抗効果素子及びメモリー素子
US5640343A (en) * 1996-03-18 1997-06-17 International Business Machines Corporation Magnetic memory array using magnetic tunnel junction devices in the memory cells
US5962905A (en) * 1996-09-17 1999-10-05 Kabushiki Kaisha Toshiba Magnetoresistive element
JP2924845B2 (ja) * 1997-03-24 1999-07-26 ティーディーケイ株式会社 スピンバルブ磁気抵抗素子を備えた磁気ヘッド及びその製造方法
JPH1187796A (ja) * 1997-09-02 1999-03-30 Toshiba Corp 磁性半導体装置および磁性記録・再生装置
JP3646508B2 (ja) * 1998-03-18 2005-05-11 株式会社日立製作所 トンネル磁気抵抗効果素子、これを用いた磁気センサー及び磁気ヘッド
AU4024800A (en) * 1999-03-29 2000-10-16 Gillette Company, The Alkaline cell with improved separator
FR2791814A1 (fr) * 1999-03-31 2000-10-06 Univ Pasteur Dispositif microelectronique a jonctions tunnel et reseau de memoires et capteur comprenant de tels dispositifs
JP4076197B2 (ja) * 1999-05-19 2008-04-16 株式会社東芝 磁性素子、記憶装置、磁気再生ヘッド、３端子素子、及び磁気ディスク装置
AU2002230791A1 (en) * 2000-10-26 2002-05-06 University Of Iowa Research Foundation Unipolar spin diode and transistor and the applications of the same

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998025263A1 (en) * 1996-12-02 1998-06-11 Koninklijke Philips Electronics N.V. Lateral magneto-electronic device exploiting a quasi-two-dimensional electron gas

Non-Patent Citations (6)

* Cited by examiner, † Cited by third party
Title
DAUGHTON J M ET AL: "APPLICATIONS OF SPIN DEPENDENT TRANSPORT MATERIALS", JOURNAL OF PHYSICS D. APPLIED PHYSICS, IOP PUBLISHING, BRISTOL, GB, vol. 32, no. 22, 21 November 1999 (1999-11-21), pages R169 - R177, XP000947410, ISSN: 0022-3727 *
FIEDERLING R ET AL: "INJECTION AND DETECTION OF A SPIN-POLARIZED CURRENT IN A LIGHT-EMITTING DIODE", NATURE, MACMILLAN JOURNALS LTD. LONDON, GB, vol. 402, no. 6763, 16 December 1999 (1999-12-16), pages 787 - 790, XP000960957, ISSN: 0028-0836 *
M. OESTREICH: "Injecting spin into electronics", NATURE, MACMILLAN JOURNALS LTD. LONDON, GB, vol. 402, no. 22, 16 December 1999 (1999-12-16), pages 735 - 737, XP002210977 *
OESTREICH M ET AL: "SPIN INJECTION INTO SEMICONDUCTORS", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 74, no. 9, 1 March 1999 (1999-03-01), pages 1251 - 1253, XP000805889, ISSN: 0003-6951 *
SCHMIDT G ET AL: "Spin injection into semiconductors, physics and experiments", SEMICOND SCI TECHNOL;SEMICONDUCTOR SCIENCE AND TECHNOLOGY APRIL 2002, vol. 17, no. 4, April 2002 (2002-04-01), pages 310 - 321, XP002210978 *
SUPRIYO DATTA ET AL: "ELECTRONIC ANALOG OF THE ELECTRO-OPTIC MODULATOR", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 56, no. 7, 12 February 1990 (1990-02-12), pages 665 - 667, XP000126701, ISSN: 0003-6951 *

Also Published As

Publication number Publication date
US20040113188A1 (en) 2004-06-17
CN1509413A (zh) 2004-06-30
KR20030093249A (ko) 2003-12-06
DE10114963A1 (de) 2002-10-02
DE10291108D2 (de) 2004-04-15
JP2004531881A (ja) 2004-10-14
US6963096B2 (en) 2005-11-08
CN100390561C (zh) 2008-05-28
WO2002075344A2 (de) 2002-09-26
KR100583688B1 (ko) 2006-05-25
TW571450B (en) 2004-01-11
DE10291108B4 (de) 2009-11-26
JP4058344B2 (ja) 2008-03-05

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