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WO2002052609A3 - Compact beamline and ion implanter system using same - Google Patents

Compact beamline and ion implanter system using same Download PDF

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Publication number
WO2002052609A3
WO2002052609A3 PCT/US2001/050844 US0150844W WO02052609A3 WO 2002052609 A3 WO2002052609 A3 WO 2002052609A3 US 0150844 W US0150844 W US 0150844W WO 02052609 A3 WO02052609 A3 WO 02052609A3
Authority
WO
WIPO (PCT)
Prior art keywords
column
beamline
acceleration
electrodes
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2001/050844
Other languages
French (fr)
Other versions
WO2002052609A2 (en
Inventor
Donald W Berrian
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Proteros LLC
Original Assignee
Proteros LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Proteros LLC filed Critical Proteros LLC
Priority to AU2002231340A priority Critical patent/AU2002231340A1/en
Publication of WO2002052609A2 publication Critical patent/WO2002052609A2/en
Publication of WO2002052609A3 publication Critical patent/WO2002052609A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1472—Deflecting along given lines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

Apparatus and a system using same for directing and purifying an ion beamline (102) through an acceleration column (114) that provides both desired acceleration (or deceleration) and deflection to filter or purify the ion beam. In a first preferred embodiment, the column comprises segmented sequences of electrodes (308, 314) above and below the plane of the scanned ion beam (102) and positioned through the acceleration column such that acceleration fields may be selectively produced between gaps in the sequence of electrodes as well as across opposing upper and lower electrodes. The structure of a system using the invention preferably includes a scanner component (108) to scan the beam prior to entry into the acceleration column (114) of the invention as well as an angle corrector (112) as needed to redirect and filter the beam prior to entry to the column (114). Selectively enabling application a controlled bias (310, 312, 316, 318, 320, 321) between selected upper and lower electrodes (308, 314) allows for flexible use of the acceleration column to accelerate the beamline, decelerate the beamline and/or purify the beam by deflecting the beamline through the column.
PCT/US2001/050844 2000-12-27 2001-12-27 Compact beamline and ion implanter system using same Ceased WO2002052609A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2002231340A AU2002231340A1 (en) 2000-12-27 2001-12-27 Compact beamline and ion implanter system using same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US25835200P 2000-12-27 2000-12-27
US60/258,352 2000-12-27

Publications (2)

Publication Number Publication Date
WO2002052609A2 WO2002052609A2 (en) 2002-07-04
WO2002052609A3 true WO2002052609A3 (en) 2003-02-06

Family

ID=22980196

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/050844 Ceased WO2002052609A2 (en) 2000-12-27 2001-12-27 Compact beamline and ion implanter system using same

Country Status (2)

Country Link
AU (1) AU2002231340A1 (en)
WO (1) WO2002052609A2 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3738734B2 (en) 2002-02-06 2006-01-25 日新電機株式会社 Electrostatic accelerator tube and ion implantation apparatus including the same
US6777696B1 (en) 2003-02-21 2004-08-17 Axcelis Technologies, Inc. Deflecting acceleration/deceleration gap
US6881966B2 (en) * 2003-05-15 2005-04-19 Axcelis Technologies, Inc. Hybrid magnetic/electrostatic deflector for ion implantation systems
US7619228B2 (en) 2006-09-29 2009-11-17 Varian Semiconductor Equipment Associates, Inc. Technique for improved ion beam transport
US20100065761A1 (en) * 2008-09-17 2010-03-18 Axcelis Technologies, Inc. Adjustable deflection optics for ion implantation
US8129695B2 (en) * 2009-12-28 2012-03-06 Varian Semiconductor Equipment Associates, Inc. System and method for controlling deflection of a charged particle beam within a graded electrostatic lens
US8519353B2 (en) 2010-12-29 2013-08-27 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for controlling an asymmetric electrostatic lens about a central ray trajectory of an ion beam
US8378313B2 (en) * 2011-03-31 2013-02-19 Axcelis Technologies, Inc. Uniformity of a scanned ion beam
JP6257411B2 (en) * 2014-03-27 2018-01-10 住友重機械イオンテクノロジー株式会社 Ion implantation apparatus, final energy filter, and ion implantation method

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
No relevant documents disclosed *

Also Published As

Publication number Publication date
WO2002052609A2 (en) 2002-07-04
AU2002231340A1 (en) 2002-07-08

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