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WO2002048822A3 - Ram memory based on nanotechnology, capable, among other things, of replacing the hard disk in computers - Google Patents

Ram memory based on nanotechnology, capable, among other things, of replacing the hard disk in computers Download PDF

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Publication number
WO2002048822A3
WO2002048822A3 PCT/IL2001/001146 IL0101146W WO0248822A3 WO 2002048822 A3 WO2002048822 A3 WO 2002048822A3 IL 0101146 W IL0101146 W IL 0101146W WO 0248822 A3 WO0248822 A3 WO 0248822A3
Authority
WO
WIPO (PCT)
Prior art keywords
faster
hard
larger
disks
computer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/IL2001/001146
Other languages
French (fr)
Other versions
WO2002048822A2 (en
Inventor
Yaron Mayer
Al J C Baur
Haim Gadassi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to AU2002222474A priority Critical patent/AU2002222474A1/en
Priority to CA002431364A priority patent/CA2431364A1/en
Publication of WO2002048822A2 publication Critical patent/WO2002048822A2/en
Publication of WO2002048822A3 publication Critical patent/WO2002048822A3/en
Priority to US10/457,388 priority patent/US20030218927A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/71—Three dimensional array
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/81—Array wherein the array conductors, e.g. word lines, bit lines, are made of nanowires

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Seasonings (AREA)

Abstract

As the Internet becomes faster and faster, with more and more demanding applications, and after the problems of faster routing and faster optic fibers are solved, the next main bottleneck will be the speed of the servers, and more specifically the speed (or rather the lack of it) of the hard-disks. Therefore, finding new revolutionary ways of making faster and larger hard-disks and/or larger RAM in the computer itself can help boost the computer and Internet world much faster into the future. The present invention tries to solve the problem of making much faster and much larger preferably non-volatile RAM by Using preferably 3-dimensional addressable nano memory matrices (FIG.3) instead of 2-dimensional, so that for example if instead of a 10x10 cm flat surface we have for example a 6x6x1 cm or 3x3x2 cm cube, we can get millions of Terabits, which are millions of times larger than current hard disks. So this can be used for example as computer RAM memory, as a hard-disk, or as a removable cartridge that conveniently fits in the pocket. Many variations are discussed, including memory cells(FIG. 4) that have more than two states each, and intermediate systems wherein normal lithographically produced cells are each coupled to one or more nano-chips within them.
PCT/IL2001/001146 2000-12-11 2001-12-11 Ram memory based on nanotechnology, capable, among other things, of replacing the hard disk in computers Ceased WO2002048822A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
AU2002222474A AU2002222474A1 (en) 2000-12-11 2001-12-11 Ram memory based on nanotechnology, capable, among other things, of replacing the hard disk in computers
CA002431364A CA2431364A1 (en) 2000-12-11 2001-12-11 Ram memory based on nanotechnology, capable, among other things, of replacing the hard disk in computers
US10/457,388 US20030218927A1 (en) 2000-12-11 2003-06-10 RAM memory based on nanotechnology, capable, among other things, of replacing the hard disk in computers

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
IL140229 2000-12-11
IL14022900A IL140229A0 (en) 2000-12-11 2000-12-11 Ram memory based on nanotechnology, capable, among other things, of replacing the hard disk in computers

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US10/457,388 Continuation-In-Part US20030218927A1 (en) 2000-12-11 2003-06-10 RAM memory based on nanotechnology, capable, among other things, of replacing the hard disk in computers

Publications (2)

Publication Number Publication Date
WO2002048822A2 WO2002048822A2 (en) 2002-06-20
WO2002048822A3 true WO2002048822A3 (en) 2002-10-17

Family

ID=11074915

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IL2001/001146 Ceased WO2002048822A2 (en) 2000-12-11 2001-12-11 Ram memory based on nanotechnology, capable, among other things, of replacing the hard disk in computers

Country Status (4)

Country Link
AU (1) AU2002222474A1 (en)
CA (1) CA2431364A1 (en)
IL (1) IL140229A0 (en)
WO (1) WO2002048822A2 (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6911682B2 (en) 2001-12-28 2005-06-28 Nantero, Inc. Electromechanical three-trace junction devices
US6919592B2 (en) 2001-07-25 2005-07-19 Nantero, Inc. Electromechanical memory array using nanotube ribbons and method for making same
US6942921B2 (en) 2001-07-25 2005-09-13 Nantero, Inc. Nanotube films and articles
US6979590B2 (en) 2001-12-28 2005-12-27 Nantero, Inc. Methods of making electromechanical three-trace junction devices
US7120047B2 (en) 2001-07-25 2006-10-10 Segal Brent M Device selection circuitry constructed with nanotube technology
US7176505B2 (en) 2001-12-28 2007-02-13 Nantero, Inc. Electromechanical three-trace junction devices
US7264990B2 (en) 2001-07-25 2007-09-04 Nantero, Inc. Methods of nanotubes films and articles
US7274078B2 (en) 2001-07-25 2007-09-25 Nantero, Inc. Devices having vertically-disposed nanofabric articles and methods of making the same
US7304357B2 (en) 2001-07-25 2007-12-04 Nantero, Inc. Devices having horizontally-disposed nanofabric articles and methods of making the same
US7335395B2 (en) 2002-04-23 2008-02-26 Nantero, Inc. Methods of using pre-formed nanotubes to make carbon nanotube films, layers, fabrics, ribbons, elements and articles
US7342818B2 (en) 2001-07-25 2008-03-11 Nantero, Inc. Hybrid circuit having nanotube electromechanical memory
US7560136B2 (en) 2003-01-13 2009-07-14 Nantero, Inc. Methods of using thin metal layers to make carbon nanotube films, layers, fabrics, ribbons, elements and articles
US7566478B2 (en) 2001-07-25 2009-07-28 Nantero, Inc. Methods of making carbon nanotube films, layers, fabrics, ribbons, elements and articles

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2278013A (en) * 1993-05-10 1994-11-16 Hitachi Europ Ltd Forming nanoscale conductive patterns on substrates
US5956172A (en) * 1995-05-08 1999-09-21 3D Technology Laboratories, Inc. System and method using layered structure for three-dimensional display of information based on two-photon upconversion
US6016269A (en) * 1998-09-30 2000-01-18 Motorola, Inc. Quantum random address memory with magnetic readout and/or nano-memory elements
US6034883A (en) * 1998-01-29 2000-03-07 Tinney; Charles E. Solid state director for beams

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2278013A (en) * 1993-05-10 1994-11-16 Hitachi Europ Ltd Forming nanoscale conductive patterns on substrates
US5956172A (en) * 1995-05-08 1999-09-21 3D Technology Laboratories, Inc. System and method using layered structure for three-dimensional display of information based on two-photon upconversion
US6034883A (en) * 1998-01-29 2000-03-07 Tinney; Charles E. Solid state director for beams
US6016269A (en) * 1998-09-30 2000-01-18 Motorola, Inc. Quantum random address memory with magnetic readout and/or nano-memory elements

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7274078B2 (en) 2001-07-25 2007-09-25 Nantero, Inc. Devices having vertically-disposed nanofabric articles and methods of making the same
US7298016B2 (en) 2001-07-25 2007-11-20 Nantero, Inc. Electromechanical memory array using nanotube ribbons and method for making same
US6942921B2 (en) 2001-07-25 2005-09-13 Nantero, Inc. Nanotube films and articles
US7566478B2 (en) 2001-07-25 2009-07-28 Nantero, Inc. Methods of making carbon nanotube films, layers, fabrics, ribbons, elements and articles
US7056758B2 (en) 2001-07-25 2006-06-06 Nantero, Inc. Electromechanical memory array using nanotube ribbons and method for making same
US7120047B2 (en) 2001-07-25 2006-10-10 Segal Brent M Device selection circuitry constructed with nanotube technology
US7342818B2 (en) 2001-07-25 2008-03-11 Nantero, Inc. Hybrid circuit having nanotube electromechanical memory
US7264990B2 (en) 2001-07-25 2007-09-04 Nantero, Inc. Methods of nanotubes films and articles
US6919592B2 (en) 2001-07-25 2005-07-19 Nantero, Inc. Electromechanical memory array using nanotube ribbons and method for making same
US7304357B2 (en) 2001-07-25 2007-12-04 Nantero, Inc. Devices having horizontally-disposed nanofabric articles and methods of making the same
US7335528B2 (en) 2001-07-25 2008-02-26 Nantero, Inc. Methods of nanotube films and articles
US6911682B2 (en) 2001-12-28 2005-06-28 Nantero, Inc. Electromechanical three-trace junction devices
US7176505B2 (en) 2001-12-28 2007-02-13 Nantero, Inc. Electromechanical three-trace junction devices
US7521736B2 (en) 2001-12-28 2009-04-21 Nantero, Inc. Electromechanical three-trace junction devices
US6979590B2 (en) 2001-12-28 2005-12-27 Nantero, Inc. Methods of making electromechanical three-trace junction devices
US7335395B2 (en) 2002-04-23 2008-02-26 Nantero, Inc. Methods of using pre-formed nanotubes to make carbon nanotube films, layers, fabrics, ribbons, elements and articles
US7560136B2 (en) 2003-01-13 2009-07-14 Nantero, Inc. Methods of using thin metal layers to make carbon nanotube films, layers, fabrics, ribbons, elements and articles

Also Published As

Publication number Publication date
WO2002048822A2 (en) 2002-06-20
IL140229A0 (en) 2002-02-10
AU2002222474A1 (en) 2002-06-24
CA2431364A1 (en) 2002-06-20

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