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WO2001037383A3 - Group iii-nitride semiconductor structures with reduced phase separation - Google Patents

Group iii-nitride semiconductor structures with reduced phase separation Download PDF

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Publication number
WO2001037383A3
WO2001037383A3 PCT/IB2000/001681 IB0001681W WO0137383A3 WO 2001037383 A3 WO2001037383 A3 WO 2001037383A3 IB 0001681 W IB0001681 W IB 0001681W WO 0137383 A3 WO0137383 A3 WO 0137383A3
Authority
WO
WIPO (PCT)
Prior art keywords
phase separation
pentenary
quaternary
group iii
semiconductor structures
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/IB2000/001681
Other languages
French (fr)
Other versions
WO2001037383A2 (en
Inventor
Toru Takayama
Baba Takaaki
S Harris James Jr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/442,077 external-priority patent/US6903364B1/en
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP2001537831A priority Critical patent/JP2003514402A/en
Publication of WO2001037383A2 publication Critical patent/WO2001037383A2/en
Publication of WO2001037383A3 publication Critical patent/WO2001037383A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/852—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs being Group III-V materials comprising three or more elements, e.g. AlGaN or InAsSbP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H10F30/2215—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction the devices comprising active layers made of only Group III-V materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

Landscapes

  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Biophysics (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Light Receiving Elements (AREA)
  • Recrystallisation Techniques (AREA)
  • Bipolar Transistors (AREA)

Abstract

Group III-nitride quaternary and pentenary material systems and methods are disclosed for use in semiconductor structures, including laser diodes, transistors, and photodetectors, which reduce or eliminate phase separation and provide increased emission efficiency. In an exemplary embodiment the semiconductor structure includes a first ternary, quaternary or pentenary material layer using BlnGaAlN material system of a first conduction type formed substantially without phase separation, and a quaternary or pentenary material active layer using BlnGaAlN material system substantially without phase separation, and a third ternary, quaternary or pentenary material layer using BlnGaAlN material system of an opposite conduction type formed substantially without phase separation.
PCT/IB2000/001681 1999-11-16 2000-11-15 Group iii-nitride semiconductor structures with reduced phase separation Ceased WO2001037383A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001537831A JP2003514402A (en) 1999-11-16 2000-11-15 Semiconductor structure and manufacturing method using group III nitride material with suppressed phase separation

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/442,077 US6903364B1 (en) 1999-03-26 1999-11-16 Semiconductor structures using a group III-nitride material system with reduced phase separation and method of fabrication
US09/442,077 1999-11-16

Publications (2)

Publication Number Publication Date
WO2001037383A2 WO2001037383A2 (en) 2001-05-25
WO2001037383A3 true WO2001037383A3 (en) 2001-10-04

Family

ID=23755456

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2000/001681 Ceased WO2001037383A2 (en) 1999-11-16 2000-11-15 Group iii-nitride semiconductor structures with reduced phase separation

Country Status (2)

Country Link
JP (2) JP2003514402A (en)
WO (1) WO2001037383A2 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007135739A1 (en) * 2006-05-24 2007-11-29 Meijo University Ultraviolet photosensor
JP2009027022A (en) * 2007-07-20 2009-02-05 Rohm Co Ltd Nitride semiconductor light-emitting element
JP2012209297A (en) * 2011-03-29 2012-10-25 Mitsubishi Electric Corp Semiconductor device and method of manufacturing the same
JP6454981B2 (en) * 2014-04-24 2019-01-23 住友電気工業株式会社 Semiconductor laminate and light receiving element
WO2016125993A1 (en) * 2015-02-06 2016-08-11 서울바이오시스 주식회사 Ultraviolet light emitting diode
KR101773709B1 (en) 2016-05-09 2017-08-31 대구가톨릭대학교산학협력단 Ultraviolet Bx1Aly1Ga1-x1-y1N/Bx2Aly2Ga1-x2-y2N Quantum Well Light Emitting Diode Grown On AlN for Reducing Strain
JP7024534B2 (en) * 2018-03-20 2022-02-24 富士通株式会社 Semiconductor devices and their manufacturing methods

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06164055A (en) * 1992-11-25 1994-06-10 Asahi Chem Ind Co Ltd Quantum-well semiconductor laser
US5828684A (en) * 1995-12-29 1998-10-27 Xerox Corporation Dual polarization quantum well laser in the 200 to 600 nanometers range
US5834331A (en) * 1996-10-17 1998-11-10 Northwestern University Method for making III-Nitride laser and detection device
EP0951077A2 (en) * 1998-04-14 1999-10-20 Matsushita Electronics Corporation Method for growing nitride compound semiconductor
JPH11330633A (en) * 1999-04-26 1999-11-30 Sharp Corp Semiconductor light emitting device
WO2000059084A2 (en) * 1999-03-26 2000-10-05 Matsushita Electric Industrial Co., Ltd. Semiconductors structures using a group iii-nitride quaternary material system with reduced phase separation and method of fabrication

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06152072A (en) * 1992-11-16 1994-05-31 Asahi Chem Ind Co Ltd Semiconductor laser
JP3484997B2 (en) * 1994-07-06 2004-01-06 日亜化学工業株式会社 Gallium nitride based compound semiconductor light emitting device
JPH08310900A (en) * 1995-05-10 1996-11-26 Sumitomo Electric Ind Ltd Nitride thin film single crystal and manufacturing method thereof
JPH11233822A (en) * 1998-02-13 1999-08-27 Mitsubishi Materials Corp Nitride semiconductor light emitting device
JPH11298090A (en) * 1998-04-09 1999-10-29 Nichia Chem Ind Ltd Nitride semiconductor device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06164055A (en) * 1992-11-25 1994-06-10 Asahi Chem Ind Co Ltd Quantum-well semiconductor laser
US5828684A (en) * 1995-12-29 1998-10-27 Xerox Corporation Dual polarization quantum well laser in the 200 to 600 nanometers range
US5834331A (en) * 1996-10-17 1998-11-10 Northwestern University Method for making III-Nitride laser and detection device
EP0951077A2 (en) * 1998-04-14 1999-10-20 Matsushita Electronics Corporation Method for growing nitride compound semiconductor
WO2000059084A2 (en) * 1999-03-26 2000-10-05 Matsushita Electric Industrial Co., Ltd. Semiconductors structures using a group iii-nitride quaternary material system with reduced phase separation and method of fabrication
JPH11330633A (en) * 1999-04-26 1999-11-30 Sharp Corp Semiconductor light emitting device

Non-Patent Citations (6)

* Cited by examiner, † Cited by third party
Title
KAWANISHI H ET AL: "BAlGaN system and MOVPE growth on (0001)6H-SiC substrate", OPTOELECTRONIC DEVICES, SAN JOSE, 1997, vol. 2994, pages 52 - 59, XP000991326, ISSN: 0277-786X *
MATSUOKA T: "Phase separation in InGaAlN", MRS INTERNET JOURNAL OF NITRIDE RESEARCH, vol. 3, 1998, pages 1 - 5, XP002149866, ISSN: 1092-5783 *
PATENT ABSTRACTS OF JAPAN vol. 018, no. 480 (E - 1603) 8 September 1994 (1994-09-08) *
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 02 29 February 2000 (2000-02-29) *
PINER E ET AL: "Growth and properties of InGaN and AlInGaN thin films on sapphire", MRS INTERNET JOURNAL OF NITRIDE RESEARCH, vol. 1, 1996, pages 1 - 6, XP002149863, ISSN: 1092-5783 *
WEI C H ET AL: "Unstable composition region in the wurtzite BGaAlN system", JOURNAL OF CRYSTAL GROWTH, JAN. 2000, vol. 208, pages 179 - 182, XP000990113, ISSN: 0022-0248 *

Also Published As

Publication number Publication date
JP4837012B2 (en) 2011-12-14
JP2003514402A (en) 2003-04-15
WO2001037383A2 (en) 2001-05-25
JP2009049422A (en) 2009-03-05

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