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WO2001014248A3 - Assembly process for delicate silicon structures - Google Patents

Assembly process for delicate silicon structures Download PDF

Info

Publication number
WO2001014248A3
WO2001014248A3 PCT/US2000/040661 US0040661W WO0114248A3 WO 2001014248 A3 WO2001014248 A3 WO 2001014248A3 US 0040661 W US0040661 W US 0040661W WO 0114248 A3 WO0114248 A3 WO 0114248A3
Authority
WO
WIPO (PCT)
Prior art keywords
document
silicon structures
assembly process
date
delicate silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2000/040661
Other languages
French (fr)
Other versions
WO2001014248A2 (en
Inventor
Michael Pedersen
Peter V Loeppert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Knowles Electronics LLC
Original Assignee
Knowles Electronics LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Knowles Electronics LLC filed Critical Knowles Electronics LLC
Priority to AU78814/00A priority Critical patent/AU7881400A/en
Publication of WO2001014248A2 publication Critical patent/WO2001014248A2/en
Publication of WO2001014248A3 publication Critical patent/WO2001014248A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00865—Multistep processes for the separation of wafers into individual elements
    • B81C1/00896—Temporary protection during separation into individual elements

Definitions

  • IPC International Patent Classification
  • EP 0 614 102 A (TEXAS INSTRUMENTS) 1-12 7 September 1994 (1994-09-07) col umn 1 , l i ne 38 - l i ne 41 ; cl aims

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Pressure Sensors (AREA)
  • Micromachines (AREA)
  • Management, Administration, Business Operations System, And Electronic Commerce (AREA)

Abstract

A method for fabrication of silicon structures is disclosed. The method includes providing an acoustic transducer having a perforated member spaced from a diaphragm. Between the perforated member and the diaphragm is a sacrificial layer. After attaching the transducer to a carrier, the sacrificial layer is removed.

Description

A. CLASSIFICATION OF SUBJECT MATTER
IPC 7 B81C3/00 B81B3/00 H04R19/04 B81B7/00
According to International Patent Classification (IPC) or to both national classification and IPC
B. FIELDS SEARCHED
Minimum documentation searched (classification system followed by classification symbols)
IPC 7 B81B H04R
Documentation searched other than minimum documentation to the extent that such documents are included in the fields searched
Electronic data base consulted during the international search (name of data base and, where practical search terms used)
INSPEC , PAJ , EPO-Internal
C. DOCUMENTS CONSIDERED TO BE RELEVANT
Category ° Citation of document with indication, where appropπate of the relevant passages Relevant to claim No
SRIDHARAN ET AL : "Post-packagi ng rel ease
: a new concept for surface-mi cromachi ned devi ces"
TECH. DIG. OF SOLID-STATE SENSOR AND
ACTUATOR WORKSHOP,
8 - 11 June 1998, pages 225-228, XP000992464 hi 1 ton head i s l and , SC , USA page 225 , l eft-hand col umn , l ast paragraph -ri ght-hand col umn , paragraph 1
1-27
EP 0 614 102 A (TEXAS INSTRUMENTS) 1-12 7 September 1994 (1994-09-07) col umn 1 , l i ne 38 - l i ne 41 ; cl aims
-/--
Further documents are listed in the continuation of box C Patent family members are listed in annex
° Special categories of cited documents
"T* later document published after the international filing date or pπorrty date and not in conflict with the application but
"A" document defining the general state of the art which is not cited to understand the principle or theory underlying the considered to be of particular relevance invention
Ε" earlier document but published on or after the international "X- document of particular relevance, the claimed invention filing date cannot be considered novel or cannot be considered to
"L" document which may throw doubts on pnoπty claιm(s) or involve an inventive step when the document is taken alone which is cited to establish the publication date of another "Y" document of particular relevance, the claimed invention citation or other special reason (as specified) cannot be considered to involve an inventive step when the
"O" document referring to an oral disclosure, use, exhibition or document is combined with one or more other such docuother means ments, such combination being obvious to a person skilled
"P" document published prior to the international filing date but in the art later than the priority date claimed ■&" document member of the same patent family
Date of the actual completion of the international search Date of mailing of the international search report
30 March 2001 05/04/2001
Name and mailing address of the ISA Authorized officer
European Patent Office P B 5818 Patentlaan 2 NL - 2280 HV Ri|swi|k Tel (+31-70) 3 0-2040 Tx 31 651 epo nl, Fax (+31-70) 3 0-3016 Gori , P
Form PCT/lSA/210 (second sheet) (July 1992) C.(Continuatιon) DOCUMENTS CONSIDERED TO BE RELEVANT
Category ° Citation of document, with indication.where appropriate, of the relevant passages Relevant to claim No
US 5 573 679 A (MITCHELL ET AL.) 13-27 12 November 1996 (1996-11-12) abstract
US 5 389 182 A (MIGNARDI) 1-27
14 February 1995 (1995-02-14) abstract
US 5 534 466 A (PERFECTO ET AL.) 1-27 9 July 1996 (1996-07-09) abstract
Form PCT/lSA/210 (continuation of second sheet) (July 1992) n orma ion on pa en ami y mem ers
PCT/US 00/40661
Patent document Publication Patent family Publication cited in search report date member(s) date
EP 614102 07-09-1994 CA 2115947 A 04-09-1994
CN 1101458 A,B 12-04-1995
DE 69415059 D 21-01-1999
DE 69415059 T 20-05-1999
JP 7006983 A 10-01-1995
US 5622900 A 22-04-1997
US 5573679 A 12-11-1996 NONE
US 5389182 A 14-02-1995 CA 2129212 A 03-02-1995 CN 1120733 A,B 17-04-1996 EP 0655781 A 31-05-1995
US 5534466 A 09-07-1996 P 8330416 A 13-12-1996
Form PCT/lSA/210 (patent family annex) (July 1992)
PCT/US2000/040661 1999-08-24 2000-08-16 Assembly process for delicate silicon structures Ceased WO2001014248A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU78814/00A AU7881400A (en) 1999-08-24 2000-08-16 Assembly process for delicate silicon structures

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US37941499A 1999-08-24 1999-08-24
US09/379,414 1999-08-24

Publications (2)

Publication Number Publication Date
WO2001014248A2 WO2001014248A2 (en) 2001-03-01
WO2001014248A3 true WO2001014248A3 (en) 2001-10-11

Family

ID=23497168

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2000/040661 Ceased WO2001014248A2 (en) 1999-08-24 2000-08-16 Assembly process for delicate silicon structures

Country Status (2)

Country Link
AU (1) AU7881400A (en)
WO (1) WO2001014248A2 (en)

Cited By (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7072482B2 (en) 2002-09-06 2006-07-04 Sonion Nederland B.V. Microphone with improved sound inlet port
US7161730B2 (en) 2004-09-27 2007-01-09 Idc, Llc System and method for providing thermal compensation for an interferometric modulator display
US7193768B2 (en) 2003-08-26 2007-03-20 Qualcomm Mems Technologies, Inc. Interference display cell
US7198973B2 (en) 2003-04-21 2007-04-03 Qualcomm Mems Technologies, Inc. Method for fabricating an interference display unit
US7221495B2 (en) 2003-06-24 2007-05-22 Idc Llc Thin film precursor stack for MEMS manufacturing
US7250315B2 (en) 2002-02-12 2007-07-31 Idc, Llc Method for fabricating a structure for a microelectromechanical system (MEMS) device
US7291921B2 (en) 2003-09-30 2007-11-06 Qualcomm Mems Technologies, Inc. Structure of a micro electro mechanical system and the manufacturing method thereof
US7297471B1 (en) 2003-04-15 2007-11-20 Idc, Llc Method for manufacturing an array of interferometric modulators
US7321457B2 (en) 2006-06-01 2008-01-22 Qualcomm Incorporated Process and structure for fabrication of MEMS device having isolated edge posts
US7349136B2 (en) 2004-09-27 2008-03-25 Idc, Llc Method and device for a display having transparent components integrated therein
US7369292B2 (en) 2006-05-03 2008-05-06 Qualcomm Mems Technologies, Inc. Electrode and interconnect materials for MEMS devices
US7369296B2 (en) 2004-09-27 2008-05-06 Idc, Llc Device and method for modifying actuation voltage thresholds of a deformable membrane in an interferometric modulator
US7373026B2 (en) 2004-09-27 2008-05-13 Idc, Llc MEMS device fabricated on a pre-patterned substrate
US7382515B2 (en) 2006-01-18 2008-06-03 Qualcomm Mems Technologies, Inc. Silicon-rich silicon nitrides as etch stops in MEMS manufacture
US7405863B2 (en) 2006-06-01 2008-07-29 Qualcomm Mems Technologies, Inc. Patterning of mechanical layer in MEMS to reduce stresses at supports
US7405861B2 (en) 2004-09-27 2008-07-29 Idc, Llc Method and device for protecting interferometric modulators from electrostatic discharge
US7417784B2 (en) 2006-04-19 2008-08-26 Qualcomm Mems Technologies, Inc. Microelectromechanical device and method utilizing a porous surface
US7417783B2 (en) 2004-09-27 2008-08-26 Idc, Llc Mirror and mirror layer for optical modulator and method
US7420728B2 (en) 2004-09-27 2008-09-02 Idc, Llc Methods of fabricating interferometric modulators by selectively removing a material
US7450295B2 (en) 2006-03-02 2008-11-11 Qualcomm Mems Technologies, Inc. Methods for producing MEMS with protective coatings using multi-component sacrificial layers
US7492502B2 (en) 2004-09-27 2009-02-17 Idc, Llc Method of fabricating a free-standing microstructure
US7527996B2 (en) 2006-04-19 2009-05-05 Qualcomm Mems Technologies, Inc. Non-planar surface structures and process for microelectromechanical systems
US7534640B2 (en) 2005-07-22 2009-05-19 Qualcomm Mems Technologies, Inc. Support structure for MEMS device and methods therefor
US7547568B2 (en) 2006-02-22 2009-06-16 Qualcomm Mems Technologies, Inc. Electrical conditioning of MEMS device and insulating layer thereof
US7547565B2 (en) 2005-02-04 2009-06-16 Qualcomm Mems Technologies, Inc. Method of manufacturing optical interference color display
US7550794B2 (en) 2002-09-20 2009-06-23 Idc, Llc Micromechanical systems device comprising a displaceable electrode and a charge-trapping layer
US7553684B2 (en) 2004-09-27 2009-06-30 Idc, Llc Method of fabricating interferometric devices using lift-off processing techniques
US7566664B2 (en) 2006-08-02 2009-07-28 Qualcomm Mems Technologies, Inc. Selective etching of MEMS using gaseous halides and reactive co-etchants
US7569488B2 (en) 2007-06-22 2009-08-04 Qualcomm Mems Technologies, Inc. Methods of making a MEMS device by monitoring a process parameter
US7623287B2 (en) 2006-04-19 2009-11-24 Qualcomm Mems Technologies, Inc. Non-planar surface structures and process for microelectromechanical systems
US7630114B2 (en) 2005-10-28 2009-12-08 Idc, Llc Diffusion barrier layer for MEMS devices
US7643203B2 (en) 2006-04-10 2010-01-05 Qualcomm Mems Technologies, Inc. Interferometric optical display system with broadband characteristics

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6859542B2 (en) 2001-05-31 2005-02-22 Sonion Lyngby A/S Method of providing a hydrophobic layer and a condenser microphone having such a layer
US7012726B1 (en) * 2003-11-03 2006-03-14 Idc, Llc MEMS devices with unreleased thin film components
EP2495212A3 (en) 2005-07-22 2012-10-31 QUALCOMM MEMS Technologies, Inc. Mems devices having support structures and methods of fabricating the same
DE102006002106B4 (en) * 2006-01-17 2016-03-03 Robert Bosch Gmbh Micromechanical sensor with perforation-optimized membrane as well as a suitable production process
GB2443756B (en) 2006-02-24 2010-03-17 Wolfson Microelectronics Plc MEMS device
US7706042B2 (en) 2006-12-20 2010-04-27 Qualcomm Mems Technologies, Inc. MEMS device and interconnects for same
EP2406964B1 (en) 2009-03-09 2013-04-17 Nxp B.V. Microphone and accelerometer
FI124072B (en) 2009-05-29 2014-03-14 Valtion Teknillinen Micromechanical Fabry-Perot Adjustable Interferometer, Intermediate, and Method of Manufacture
US8659816B2 (en) 2011-04-25 2014-02-25 Qualcomm Mems Technologies, Inc. Mechanical layer and methods of making the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0614102A2 (en) * 1993-03-03 1994-09-07 Texas Instruments Incorporated Improvements in or relating to integrated circuit fabrication
US5389182A (en) * 1993-08-02 1995-02-14 Texas Instruments Incorporated Use of a saw frame with tape as a substrate carrier for wafer level backend processing
US5534466A (en) * 1995-06-01 1996-07-09 International Business Machines Corporation Method of making area direct transfer multilayer thin film structure
US5573679A (en) * 1995-06-19 1996-11-12 Alberta Microelectronic Centre Fabrication of a surface micromachined capacitive microphone using a dry-etch process

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0614102A2 (en) * 1993-03-03 1994-09-07 Texas Instruments Incorporated Improvements in or relating to integrated circuit fabrication
US5389182A (en) * 1993-08-02 1995-02-14 Texas Instruments Incorporated Use of a saw frame with tape as a substrate carrier for wafer level backend processing
US5534466A (en) * 1995-06-01 1996-07-09 International Business Machines Corporation Method of making area direct transfer multilayer thin film structure
US5573679A (en) * 1995-06-19 1996-11-12 Alberta Microelectronic Centre Fabrication of a surface micromachined capacitive microphone using a dry-etch process

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
SRIDHARAN ET AL: "Post-packaging release : a new concept for surface-micromachined devices", TECH. DIG. OF SOLID-STATE SENSOR AND ACTUATOR WORKSHOP, 8 June 1998 (1998-06-08) - 11 June 1998 (1998-06-11), hilton head island, SC, USA, pages 225 - 228, XP000992464 *

Cited By (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7642110B2 (en) 2002-02-12 2010-01-05 Qualcomm Mems Technologies, Inc. Method for fabricating a structure for a microelectromechanical systems (MEMS) device
US7250315B2 (en) 2002-02-12 2007-07-31 Idc, Llc Method for fabricating a structure for a microelectromechanical system (MEMS) device
US7072482B2 (en) 2002-09-06 2006-07-04 Sonion Nederland B.V. Microphone with improved sound inlet port
US7550794B2 (en) 2002-09-20 2009-06-23 Idc, Llc Micromechanical systems device comprising a displaceable electrode and a charge-trapping layer
US7297471B1 (en) 2003-04-15 2007-11-20 Idc, Llc Method for manufacturing an array of interferometric modulators
US7556917B2 (en) 2003-04-15 2009-07-07 Idc, Llc Method for manufacturing an array of interferometric modulators
US7198973B2 (en) 2003-04-21 2007-04-03 Qualcomm Mems Technologies, Inc. Method for fabricating an interference display unit
US7221495B2 (en) 2003-06-24 2007-05-22 Idc Llc Thin film precursor stack for MEMS manufacturing
US7616369B2 (en) 2003-06-24 2009-11-10 Idc, Llc Film stack for manufacturing micro-electromechanical systems (MEMS) devices
US7193768B2 (en) 2003-08-26 2007-03-20 Qualcomm Mems Technologies, Inc. Interference display cell
US7291921B2 (en) 2003-09-30 2007-11-06 Qualcomm Mems Technologies, Inc. Structure of a micro electro mechanical system and the manufacturing method thereof
US7420728B2 (en) 2004-09-27 2008-09-02 Idc, Llc Methods of fabricating interferometric modulators by selectively removing a material
US7369296B2 (en) 2004-09-27 2008-05-06 Idc, Llc Device and method for modifying actuation voltage thresholds of a deformable membrane in an interferometric modulator
US7373026B2 (en) 2004-09-27 2008-05-13 Idc, Llc MEMS device fabricated on a pre-patterned substrate
US7161730B2 (en) 2004-09-27 2007-01-09 Idc, Llc System and method for providing thermal compensation for an interferometric modulator display
US7405861B2 (en) 2004-09-27 2008-07-29 Idc, Llc Method and device for protecting interferometric modulators from electrostatic discharge
US7553684B2 (en) 2004-09-27 2009-06-30 Idc, Llc Method of fabricating interferometric devices using lift-off processing techniques
US7417783B2 (en) 2004-09-27 2008-08-26 Idc, Llc Mirror and mirror layer for optical modulator and method
US7492502B2 (en) 2004-09-27 2009-02-17 Idc, Llc Method of fabricating a free-standing microstructure
US7429334B2 (en) 2004-09-27 2008-09-30 Idc, Llc Methods of fabricating interferometric modulators by selectively removing a material
US7349136B2 (en) 2004-09-27 2008-03-25 Idc, Llc Method and device for a display having transparent components integrated therein
US7547565B2 (en) 2005-02-04 2009-06-16 Qualcomm Mems Technologies, Inc. Method of manufacturing optical interference color display
US7534640B2 (en) 2005-07-22 2009-05-19 Qualcomm Mems Technologies, Inc. Support structure for MEMS device and methods therefor
US7630114B2 (en) 2005-10-28 2009-12-08 Idc, Llc Diffusion barrier layer for MEMS devices
US7382515B2 (en) 2006-01-18 2008-06-03 Qualcomm Mems Technologies, Inc. Silicon-rich silicon nitrides as etch stops in MEMS manufacture
US7547568B2 (en) 2006-02-22 2009-06-16 Qualcomm Mems Technologies, Inc. Electrical conditioning of MEMS device and insulating layer thereof
US7450295B2 (en) 2006-03-02 2008-11-11 Qualcomm Mems Technologies, Inc. Methods for producing MEMS with protective coatings using multi-component sacrificial layers
US7643203B2 (en) 2006-04-10 2010-01-05 Qualcomm Mems Technologies, Inc. Interferometric optical display system with broadband characteristics
US7527996B2 (en) 2006-04-19 2009-05-05 Qualcomm Mems Technologies, Inc. Non-planar surface structures and process for microelectromechanical systems
US7564613B2 (en) 2006-04-19 2009-07-21 Qualcomm Mems Technologies, Inc. Microelectromechanical device and method utilizing a porous surface
US7623287B2 (en) 2006-04-19 2009-11-24 Qualcomm Mems Technologies, Inc. Non-planar surface structures and process for microelectromechanical systems
US7417784B2 (en) 2006-04-19 2008-08-26 Qualcomm Mems Technologies, Inc. Microelectromechanical device and method utilizing a porous surface
US7369292B2 (en) 2006-05-03 2008-05-06 Qualcomm Mems Technologies, Inc. Electrode and interconnect materials for MEMS devices
US7561321B2 (en) 2006-06-01 2009-07-14 Qualcomm Mems Technologies, Inc. Process and structure for fabrication of MEMS device having isolated edge posts
US7321457B2 (en) 2006-06-01 2008-01-22 Qualcomm Incorporated Process and structure for fabrication of MEMS device having isolated edge posts
US7405863B2 (en) 2006-06-01 2008-07-29 Qualcomm Mems Technologies, Inc. Patterning of mechanical layer in MEMS to reduce stresses at supports
US7566664B2 (en) 2006-08-02 2009-07-28 Qualcomm Mems Technologies, Inc. Selective etching of MEMS using gaseous halides and reactive co-etchants
US7569488B2 (en) 2007-06-22 2009-08-04 Qualcomm Mems Technologies, Inc. Methods of making a MEMS device by monitoring a process parameter

Also Published As

Publication number Publication date
WO2001014248A2 (en) 2001-03-01
AU7881400A (en) 2001-03-19

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