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WO2001013432A1 - Dispositifs de detection utilisant des transistors a effet quantique a declenchement chimique - Google Patents

Dispositifs de detection utilisant des transistors a effet quantique a declenchement chimique Download PDF

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Publication number
WO2001013432A1
WO2001013432A1 PCT/US2000/022747 US0022747W WO0113432A1 WO 2001013432 A1 WO2001013432 A1 WO 2001013432A1 US 0022747 W US0022747 W US 0022747W WO 0113432 A1 WO0113432 A1 WO 0113432A1
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Prior art keywords
nanoparticle
electron
current
electron transistor
voltage characteristic
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Daniel L. Feldheim
Louis C. Brousseau, Iii
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North Carolina State University
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North Carolina State University
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Priority to AU77006/00A priority Critical patent/AU7700600A/en
Priority to JP2001517431A priority patent/JP2003507889A/ja
Priority to EP00966700A priority patent/EP1212795A4/fr
Publication of WO2001013432A1 publication Critical patent/WO2001013432A1/fr
Anticipated expiration legal-status Critical
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4145—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for biomolecules, e.g. gate electrode with immobilised receptors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4146—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS involving nanosized elements, e.g. nanotubes, nanowires
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/48—Biological material, e.g. blood, urine; Haemocytometers
    • G01N33/50—Chemical analysis of biological material, e.g. blood, urine; Testing involving biospecific ligand binding methods; Immunological testing
    • G01N33/53—Immunoassay; Biospecific binding assay; Materials therefor
    • G01N33/543—Immunoassay; Biospecific binding assay; Materials therefor with an insoluble carrier for immobilising immunochemicals
    • G01N33/54366—Apparatus specially adapted for solid-phase testing
    • G01N33/54373—Apparatus specially adapted for solid-phase testing involving physiochemical end-point determination, e.g. wave-guides, FETS, gratings
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/48—Biological material, e.g. blood, urine; Haemocytometers
    • G01N33/50—Chemical analysis of biological material, e.g. blood, urine; Testing involving biospecific ligand binding methods; Immunological testing
    • G01N33/53—Immunoassay; Biospecific binding assay; Materials therefor
    • G01N33/543—Immunoassay; Biospecific binding assay; Materials therefor with an insoluble carrier for immobilising immunochemicals
    • G01N33/54366—Apparatus specially adapted for solid-phase testing
    • G01N33/54373—Apparatus specially adapted for solid-phase testing involving physiochemical end-point determination, e.g. wave-guides, FETS, gratings
    • G01N33/5438—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/402—Single electron transistors; Coulomb blockade transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the present invention relates to the electronic sensing, detection and measurement of chemical and biological materials, and specifically relates to sensing devices utilizing single-electron transistors as electronic transducers in conjunction with molecular receptors.
  • the present invention disclosed herein represents, in its broadest sense, an advantageous and practicable conjugation of two distinct fields of inquiry.
  • the first field entails the use of the field effect transistor ("FET”) and similar electronic logic devices in the construction of chemical and biological sensing devices.
  • the second field entails the development of the single electron transistor (SET) as an improvement or alternative to the FET as a digital logic element.
  • FET field effect transistor
  • SET single electron transistor
  • MOSFET metal-oxide-semiconductor FET
  • MOSFETs Two common classes of MOSFETs include n-channel enhancement MOSFETs and n-channel depletion
  • MOSFETs An enhancement MOSFET, generally designated 10, is shown in
  • Highly conductive source and drain regions S, D contain n-type silicon (i.e., Si with atomic impurities or "dopants” that add excessive free negative charges), and are separated by an insulating p-type Si channel 12 and
  • gate G metal electrode known as a gate G is provided, and is insulated from substrate
  • V gate In the absence of a bias voltage V gate
  • this "normally off" transistor may be contrasted with that of an n-channel depletion MOSFET shown in Figure 1 B, generally designated 20, in which a thin n-type channel 22 has been inserted under oxide layer 16
  • channel 22 This gives channel 22 a p-type (insulating) attribute and eliminates the current path between source and drain regions S, D.
  • Similar devices known as p-channel MOSFETs, may be constructed by interchanging then - and p-type materials.
  • n-channel and p-channel enhancement MOSFETs may be combined on a single integrated-circuit chip to create a complementary MOSFET or CMOS.
  • CMOS transistors Various combinations of CMOS transistors can be used to build the NOT, AND, OR, XOR and other logic gates upon which computer operations are based.
  • a second important function of the MOSFET is signal amplification. Amplification in a transistor is due to the acceleration of electrons as they move through the strong electric fields in the channel region.
  • U.S. Patent No. 4,777,019 to Dandekar is one example of a device that converts a biological chemical signal into an electronic signal to detect or measure a biological material.
  • a biological layer constructed from a mass of semiconductor material such as silicon nitride or silicon oxide
  • the two hydrogen bond bridges associated with each adenine molecule are able to pair with a thymine molecule, and thus the device may be placed in a solvent to detect the presence and concentration of thymine.
  • the electrostatic field of adenine paired with thymine is different from that of unpaired adenine, and the difference in electrostatic field changes the conductivity in the FET, which in turn modulates the source and drain current through the FET.
  • polymers such as poly-Uracil-mRNA could be coupled to the adenine locations to enable the device to detect DNA species in solution.
  • a FET-based biosensor is also provided in U.S. Patent No. 4,778,769 to Forrest et al. for assaying biologically active substances.
  • a gate insulator formed of a layer of insulating material is disposed on a p-type silicon substrate.
  • the p-type substrate contains two diffusions of n-type silicon to serve as the source and drain areas.
  • a gate electrode is disposed over the gate insulator.
  • a predetermined quantity of an agent, known to be a specific binding partner to the ligand sought to be assayed, is immobilized on the gate electrode.
  • a chemical or biochemical receptor is disposed on the top of the gate of the FET.
  • the receptor comprises immobilized enzymes on membranes, antibodies or microorganisms.
  • urease immobilized by albumin and glutaraldehyde at the gate is employed to detect the presence of urea.
  • U.S. Patent No. 4,894,339 to Hanazato et al. also discloses the use of an immobilized enzyme membrane in conjunction with a semiconductor sensor.
  • the enzyme membrane is formed by coating a base with an aqueous solution containing glucose oxidase as the enzyme, a water soluble photosensitive resin containing polyvinyl pyrrolidone and 2,5-bis (4'-azide-2'-sulfobenzal) cyclopentanone sodium salt, and bovine serum albumin. A portion of the dried coating is then irradiated by ultraviolet light to induce photo crosslinking, and treated with glutaraldehyde to induce chemical crosslinking for increased mechanical strength.
  • the sensor is constructed by mounting a hydrogen ion- sensitive insulated gate FET orpH-ISFET chip, which includes two pH-ISFETs, on an epoxy resin board.
  • the enzyme membrane is disposed on one of the pH-ISFETs, and a reference electrode is provided. Electrical leads provide communication with a measuring circuit.
  • U.S. Patent No. 5,039,390 to Hampp et al. is another example of chemical sensor that includes a chemically sensitive membrane coupled to the gate of an FET. Depending on the membrane selected, the device may be sensitive to ions, gases, enzymes, antibodies/antigens or hydride-forming DNA/RNA groups.
  • a sensor system capable of simultaneously detecting a wide variety of chemical and biological substances is disclosed in International Publication No. WO 93/08464 (International App. No. PCT/US92/08940).
  • An array of FET- based devices are mounted on a single substrate, along with calibration and associated circuitry. Each device is provided with a different, specific receptor adapted to measure a different type of substance.
  • U.S. Patent No. 5,653,939 to Hollis et al. also discloses a system containing an array of FET-based devices, each including a specific probe or receptor adapted to detect a specific target molecule.
  • MOSFET-based chemical and biological sensors such as those described above have proven useful for a wide variety of applications.
  • MOSFET devices have dominated computertechnologies for several reasons, including their low operating voltages (e.g., 0.1 V), low power consumption, high speed, and the ease with which they have been scaled down in dimension.
  • MOSFETS could be scaled down simply by shrinking each component part by a constant factor (i.e., the channel, source, gate, leads, etc.) and operating the device as usual.
  • the discreteness of a single electron charge is not significant at the macroscopic level.
  • a macroscopic capacitor connected to a battery is charged by displacing electrons from their fixed positively-charged ions on one plate and transferring them through a dielectric material to a second plate.
  • pF picofarad
  • FIG. 2 shows a device consisting of a bulk metal-insulator- nanocluster-insulator-bulk metal double-tunnel junction, or"MINIM" or"MIDIM",
  • a layer 32 of insulating material (which could be a semiconductor) is
  • a metal nanoparticle or nanocluster QD is disposed on insulating layer 32.
  • First and second insulating junctions J1 and J2 are effectively defined on either side of nanocluster QD.
  • MINIM 30 is treated as two capacitors with capacitances and resistances C*, , and C 2 , R 2 placed in series and driven by an ideal voltage source, V exRIC as shown in Figure 3A.
  • V exRIC ideal voltage source
  • the Fermi levels will not be able to align exactly, but will be offset in energy by one or more electrons. This is due to the discrete nature of charge and any impurities present in the junction region.
  • alignment is perfect and that the quantum mechanical energy levels are closer in energy than the electrostatic energy levels.
  • misalignments in the Fermi level can be accounted for by adding a voltage offset term to equation (8) set forth hereinbelow.
  • the assumption regarding quantum mechanical energy levels is valid for metal particles larger than approximately 5 nm in diameter. Semiconductor particles, however, display quantum effects at sizes much greater than this.
  • the resistances of junctions J1 , J2 are so large (R > hie 2 ) that the electrons are localized on one
  • n can be found as a
  • ⁇ £ is the difference in the energy of junction J1 before (£,) and after (£ f ) the tunneling of the electron. This quantity represents the energy that must be supplied by external voltage source V ext in order to place an electron on
  • the initial state is the energy of
  • the final energy state, E f is the energy of the system with an
  • equation (4) Upon expanding the second term in equation (3) and subtracting equation (2), equation (4) is obtained:
  • E f - E, eV/ 1 - (Q 0 e/C T ) + (e 2 /2C T )
  • ⁇ E, (eC 2 VJC T ) - (eQ 0 !C T ) + (e 2 /2C T )
  • the first term in equation (8) is the work performed by voltage source V ext to maintain V after an electron has tunneled to nanocluster QD.
  • the second and third terms represent the single electron charging effects.
  • the second term is the additional work required to tunnel an electron to nanocluster QD if an electron or electrons are already present on nanocluster QD.
  • This term provides the voltage feedback necessary to prevent the tunneling of more than n electrons to the cluster per voltage increment, where n is the step number (e.g., 1 e ⁇ , 2e " , etc. in Figure 4).
  • the transfer of a single electron through a nanoscale capacitor such as device 30 causes a substantial energy change in the circuit. This prevents
  • SETs have been constructed using polycrystalline silicon or polyacetylene as the quantum dot. Such devices have no practicable use because, in order to produce SET phenomena, they must be cooled to about 4 K. To avoid thermally-activated tunneling processes, e/2C 2 » kl . As T increases the single-electron current steps are gradually washed out and an ohmic response (i.e., a linear l-V curve) is observed. In general, room temperature operation of SETs requires transistor miniaturization down to the molecular level, employing nanoparticles that are less than approximately 12 nm in diameter and preferably less than 10 nm. Such devices are more feasibly constructed using self-assembly methods, i.e., assembly from solution phase by means of chemical interactions as opposed to lithographic systems.
  • an SET device operable at room temperature wherein a cluster of pure carbon atoms, fullerene (C 60 ), is provided as the quantum dot.
  • the device consists of a layer of insulating material (such as silicon dioxide) disposed between two conductive layers. One or more fullerenes are disposed in the insulating material.
  • the device is then biased by a battery by connecting leads to the conductive layers.
  • the device performs as a double barrier tunnel structure, wherein the each fullerene is so small that any tunnel currents will experience a Coulomb blockade effect. Under low bias (i.e.
  • the device should have a substantially step-wise current-voltage curve (l-V characteristic).
  • a three-terminal SET device having a spatially well-defined MINIM double-tunnel junction can be provided with a gate electrode disposed near the nanoparticle.
  • the flow of single electrons from source to drain can then be controlled by injecting (or removing) single electrons from the nanoparticle through the gate electrode.
  • photolithographic techniques forfabricating complex SET structures are limited to minimum size features of only about 100 nm.
  • electron beam lithography while capable of producing features on the order of 5 nm, is expensive, slow and still not readily available.
  • metal evaporation methods can provide metal islands with features down to 10 nm, but the precise placement and dispersity of the metal islands is difficult to control.
  • wet-chemical synthesis can provide clusters of almost arbitrary size.
  • SET devices self-assembly, defined as the solution-phase, chemically directed organization of material into pre-designed composite structures.
  • Chemically- synthesized nanoparticles offer several advantages as SET components, the most important of which is their small size.
  • Metal and semiconductor nanoparticles can be prepared in solution with average diameters of tens of Angstroms and larger.
  • Adsorbed or covalently attached ligands can act as stabilizers against agglomeration and can be used to import chemical functionality to nanoparticles.
  • nanoparticles can be immobilized between insulating thin films though electrostatic or covalent attachment chemistries.
  • An example of a self-assembled SET operable at room temperature is disclosed in U.S.
  • a lipid bilayer is supported at one outer side by a carbon substrate and at the other outer side by a conductive layer.
  • Each layer of the lipid bilayer symmetrically includes hydrophobic groups oriented on the inside and hydrophilic groups oriented on the outside.
  • Arranged between each layer of the lipid bilayer is a protein material having an ⁇ -helix conformation and four GCCC segments of bacte orhodopsin. The protein material serves as the insulating material.
  • a quantum dot is supported by the protein material; it is made of a conductive organic compound such as Flavin, or 7-acetyl-10-methyl-isoalloxazine wherein the acetyl group is combined to an s atom of a cysteine of a G segment of the sequence of the protein material.
  • a pair of electrodes serve as the source and drain, and are made of an inner complex salt such as Mn 3+ terrakis-tetraphenyl- porphy n in which each ortho position of four phenyl groups is respectively combined to a corresponding alanine amino group (i.e., the end amino acid) of each segment.
  • the electrodes are respectively combined to the upper and lower ends of the protein material.
  • a polyacetylene control gate (or other organic polymer having a ⁇ electron) is disposed between the opposed hydrophobic groups and connected to the quantum dot. Finally, an outer terminal is inserted through a hole in the carbon substrate. Single electron transfer occurs through the single Flavin molecule due to the tunneling effect. The nearest transition level to the Fermi level is higher than the thermal excitation level (25 mV) of an electron at room temperature, enabling room-temperature SET phenomena.
  • the outer terminal contacts the control gate application of a voltage to the control gate causes a variation of potential energy of the Flavin molecule. Increasing the voltage generates additional transition levels for electrical conduction, resulting in step- wise l-V characteristics.
  • This device may be useful as a highly miniaturized electronic switch. Applicants believe that the benefits obtained by the devices exhibiting
  • the present invention provides combines one or more chemical and/or biological sensing elements with an SET-based transducer, and can be adapted for use with a wide variety of portable, small-scale sensory systems and applications.
  • a number of advantages are readily apparent from the present disclosure: (i) capability of detecting single molecules, single-molecule binding events, and single-molecule redox reactions; (ii) diminutive dimensions that enable the integration of thousands to millions of sensors on a single chip or substrate; (iii) fast response times; (iv) selectivity; (v) low cost; and (vi) low power consumption.
  • a chemically-gated single-electron transistor has a predetermined current-voltage characteristic, is adapted for use as a chemical or biological sensor, and is operable at room temperature.
  • the single-electron transistor comprises a substrate formed of a first insulating material, source and drain electrodes disposed on the substrate, and a metal nanoparticle disposed between the source and drain electrodes and having a spatial dimension of a magnitude of approximately 12 nm or less.
  • An analyte-specific binding agent is disposed on a surface of the nanoparticle. A binding event occurring between a target analyte and the binding agent causes a detectable change in the current- voltage characteristic.
  • a device for sensing chemical or biological substances comprises a single-electron transistor having a predetermined current-voltage characteristic and including an insulated substrate, a source electrode disposed on the substrate, a drain electrode disposed on the substrate, and an array of metal nanoparticles disposed between the source and drain electrodes, with each nanoparticle having a spatial dimension of a magnitude of approximately 12 nm or less.
  • An analyte-specific binding agent is disposed on a surface of each nanoparticle, wherein a binding event occurring between a target analyte and one or more of the nanoparticles causes a detectable change in the current-voltage characteristic.
  • a device for sensing chemical or biological substances comprises a plurality of single-electron transistors having predetermined current-voltage characteristics.
  • Each single-electron transistor includes an insulated substrate, source and drain electrodes disposed on the substrate, and a metal nanoparticle disposed between the source and drain electrodes.
  • Each nanoparticle has a spatial dimension of a magnitude of approximately 12 nm or less.
  • An analyte-specific binding agent is disposed on a surface of each nanoparticle, wherein a binding event occurring between a target analyte and the nanoparticle causes a detectable change in the current-voltage characteristic.
  • a voltage source communicates with the single-electron transistors, and an integrated circuit communicates with the single-electron transistor.
  • a device for sensing chemical or biological substances comprises an insulated substrate, a plurality of elongated lower electrodes disposed on the substrate in spaced intervals from each other, and a plurality of elongated upper electrodes disposed transversely above the lower electrodes in spaced intervals from each other.
  • the upper and lower electrodes cooperatively form a grid pattern that includes a plurality of regions of intersection between the upper and lower electrodes, with each region of intersection defining a test site.
  • a single-electron transistor is constructed at each test site.
  • Each single-electron transistor has a pre- established reference current-voltage characteristic and includes a metal nanoparticle disposed between the upper and lower electrodes at each test site.
  • Each nanoparticle has a spatial dimension of a magnitude of approximately 12 nm or less and is stabilized by an insulating medium.
  • Each nanoparticle has an analyte-specific binding agent disposed on a surface of each nanoparticle, wherein a binding event occurring between a target analyte and the nanoparticle causes a detectable change in the current-voltage characteristic of the nanoparticle.
  • a voltage source communicates with the upper and lower electrodes.
  • An integrated circuit communicates with the test sites and is adapted to interpret changes in the current-voltage characteristics of the single-electron transistors caused by the occurrence of binding events.
  • a chemically-gated single- electron transistor has a predetermined current-voltage characteristic, is adapted for use as a chemical or biological sensor, and is operable at room temperature.
  • the single-electron transistor comprises a lower insulating substrate, an intermediate metal layer disposed on the lower insulating substrate, and an upper insulating substrate.
  • a well is formed in the upper insulating substrate and the intermediate metal layer, and defines a source electrode in a first portion of the intermediate metal layer and a drain electrode in a second portion of the intermediate metal layer.
  • An upper metal layer is disposed on the upper insulating substrate and over the well.
  • a metal nanoparticle is disposed within the well, has a spatial dimension of a magnitude of approximately 12 nm or less, and is stabilized within an insulating medium.
  • a molecular receptor is attached to a surface of the upper metal layer, wherein a binding event occurring between a target analyte and the molecular receptor causes a detectable change in the current-voltage characteristic.
  • a single-electron transistor probe is adapted to scan a surface for the presence of chemical or biological substances, and comprises a conductive probe tip, a metal nanoparticle having a spatial dimension of 12 nm or less and attached to the probe tip through an insulating medium, and an analyte-specific binding agent attached to the nanoparticle.
  • a binding event occurring between a target analyte and the binding agent causes a detectable change in the current-voltage characteristic.
  • a single-electron transistor device operable at room temperature and having a predetermined current- voltage characteristic is useful for sensing chemical substances.
  • the single- electron transistor comprises a substrate formed of a first insulating material, a layer of metal disposed on the substrate, and an insulator defining a double tunnel junction.
  • the insulator is formed in a region of the metal layer and includes an oxide of the metal layer, wherein the insulator divides the metal layer into a first region, a second region, and a third region.
  • the first region defines a source electrode
  • the second region defines a drain electrode
  • the third region defines a metal nanoparticle having a spatial dimension of approximately 12 nm or less. Binding of a target molecule to the nanoparticle causes a detectable change in the current-voltage characteristic.
  • Figures 1A and 1 B are perspective views of conventional field-effect transistors
  • Figure 2 is a top plan view of a single-electron transistor
  • Figures 3A and 3B are electrical schematics illustrating the operation of the single-electron transistor of Figure 2;
  • Figure 4 is a plot of current vs. voltage illustrating the electrical response of the single-electron transistor of Figure 2;
  • Figure 5 is a schematic diagram of the apparatus used to measure the electrical response of a gold nanoparticle stabilized with octanethiol ligands
  • Figures 6A and 6B are plots of current vs. voltage illustrating the electrical response of the gold nanoparticle of Figure 5 for different pH values;
  • Figure 7 is a schematic diagram of the apparatus used to measure the electrical response of a gold nanoparticle stabilized with galvinol ligands;
  • Figure 8 is a chemical diagram illustrating the conversion of galvinol into galvinoxide;
  • Figures 9A-9D are plots of current vs. voltage illustrating the electrical response of the gold nanoparticle of Figure 7 for different pH values;
  • Figure 10 is a side elevational view of a single-electron transistor according to the present invention.
  • Figure 11 is a side elevational view of another single-electron transistor according to the present invention.
  • Figures 12A and 12B are plots of current vs. voltage illustrating the electrical response of the single-electron transistorof Figure 11 when operating in amperomethc mode and potentiometric mode, respectively;
  • Figure 13 is a diagrammatic view illustrating an example of the operation of the single-electron transistor of Figure 11 ;
  • Figures 14A and 14B are exemplary plots of current vs. voltage and current vs. time, respectively, illustrating the behavior of the single-electron transistor of Figure 11 when operating as shown in Figure 13;
  • Figure 15 is a schematic view of a single-electron transistor including an array of nanoparticles according to the present invention.
  • Figure 16 is a top plan view of a biochemical sensing device including a plurality of single-electron transistors according to the present invention.
  • Figure 17A is a perspective view of a biochemical sensing device including a plurality of single-electron transistors arranged in a grid-like pattern of test sites according to the present invention
  • Figure 17B is a detailed side elevational view of a test site of the device of Figure 17A;
  • Figure 18 is a side elevation view of another single-electron transistor according to the present invention.
  • Figure 19 is a perspective view of a single-electron transistor-based scanning probe according to the present invention.
  • Figure 20 is a perspective view of another single-electron transistor according to the present invention.
  • the same current sensitivity of the SET device can be achieved by means of a chemical gating mechanism, to create a chemical SET device.
  • Embodiments of the chemical SET device are sensitive to the presence of single analyte molecules that bind to the insulator or nanoparticle surface.
  • the chemical SET device can be made selective by introducing a variety of analyte-specific binding agents to its surface or to its ligand-capped surface, including self- assembled monolayers, proteins, DNA, inorganics, etc.
  • a significant challenge to incorporating single-electron devices into nanoscale electronic circuitry is the sensitivity of SET currents to impurities which may reside on or near the nanoparticle. Impurities introduce shifts in
  • Ligand-stabilized gold (Au) nanoclusters were observed in aqueous solutions. Two different ligands were considered: octanethiol (C 8 -Au; 5 nm diameter), and galvinol (Gal-Au; 3 nm diameter) having pK a ⁇ 12 when bound to Au nanoclusters.
  • a gold nanocluster 42 is capped with
  • octanethiol ligands 44 and disposed over a planar Au substrate 46 insulated
  • STM scanning tunneling microscope 54
  • a subtle shift (approximately 30 mV) in the entire staircase (the l-V curve) to positive bias potentials is noticeable from pH 5 to pH 8.
  • the shift is even more prevalent in the l-V curves obtained at pHs 10 and 12 (from approximately 60 to 120 mV).
  • AV decreases in magnitude from 74 ⁇ 7.8 mV at pH 5 to 64 ⁇ 4.0 mV at pH 8 and to 48 ⁇ 5.6 mV at pH 12.
  • the chemically induced changes in the SET staircases described above may be rationalized by considering the effects of charge and/or structural changes occurring in the galvinol monolayer upon deprotonation.
  • galvinol is in a protonated neutral form.
  • Coulomb staircases of Gal-Au at pH 5 are therefore typically symmetrical, with the first step centered near 0 V (the Coulomb gap).
  • the increased negative charge on the nanocluster has two consequences. First, the total capacitance of the cluster increases.
  • a SET device for directly measuring the pH value of a solution, and for detecting redox events or analyte binding events known to occur as consequence of a change in pH value, is constructed by applicants
  • Electrodes S, D are disposed in a spaced-apart relationship on a surface of a
  • Supporting substrate SUB is formed of a normally insulating material such as silicon, silicon dioxide, or polymer.
  • substrate SUB could be made of a conductive material and insulated by an
  • insulating material such as a thiol layer.
  • a nanoscopic quantity of metal such as gold, silver or platinum is disposed between source and drain electrodes S,
  • Nanoparticle QD is capped
  • ligand substance L known to be responsive to pH changes such as a thiol, and preferably galvinol.
  • Suitable lead wires LW or the like are then connected to source and drain electrodes.
  • a change in the pH value of a solution in contact with the device will cause a shift in the stepwise l-V curve in the manner described above. This change may be accurately measured and interpreted with the aid of circuitry or other known means.
  • An SET-based, chemically-gated sensor device, generally designated 70, having a base construction similar to pH-gated SET device 60 may be utilized as a transduction element in a wide variety of sensors or test sites designed with different types of chemical gates to selectively detect a particular analyte, i.e., a target molecule, chemical compound, or biological material.
  • capping ligand or insulator I functions as a
  • double-tunnel junction and binding agent A functions as a chemical gate
  • binding agents A may be chosen, including self-assembled monolayers, proteins, antibodies/antigens, DNA, and inorganics. And, consequently a wide variety of analytes B may be detected according to known binding relationships and chemistry.
  • the source-drain potential will be biased at a point on any arbitrary voltage plateau on the l-V curve, such as by employing a battery or potentiostat.
  • sensor device 70 must remain on the same current step following charge injection (or removal), and the only parameter that is allowed to change is the current.
  • the change in nanocluster charge thus causes current to flow (or not to flow, depending on the configuration or bias of sensor device 70), such that sensor device 70 in
  • Figure 13 is a diagrammatic representation of applicants' sensor device 70, configured such that a single-electron flow between metal leads occurs
  • 14B is a corresponding plot of current as a function of time, and illustrates that the operation of sensor device 70 can be advantageously employed as digital information.
  • a number of embodiments may be constructed from the novel device described above.
  • an array of nanoparticles or cluster array 80 is provided between source and drain electrodes S, D in order to increase the area of the testing site and improve the chances of detecting the desired analyte, or to measure the concentration of the analyte in solution.
  • Cluster array 80 may be electrically connected to an external voltage source V
  • test card orwearable badge may be any suitable test card orwearable badge.
  • 90 may be any suitable test card orwearable badge.
  • Wearable badge 90 includes an integrated
  • sensing arrays 80 may include different binding agents attached to their respective nanoparticles orcapping ligands, such thatwearable badge 90 is able to detect a variety of different analytes.
  • Known methods may be employed to enable
  • integrated analysis circuit IC to discriminate among the various signals received from different sensing arrays 80. For example, the location of each individual
  • array 80 such as the presence or absence of a signal from that sensing array
  • an array is provided in the configuration of a conductive sandwich grid, generally designated 100.
  • a plurality of top electrodes TE are
  • test site TS defines a test site TS.
  • a plurality of nanoparticles QD are interposed between
  • an insulating material I such as a plurality of ligands is provided to serve
  • each test site TS effectively contains a single SET transistor.
  • Each transistor or group of transistors may contain different binding agents, so that conductive grid 100 may contain a number of test sites TS designed to detect a number of different analytes.
  • a back-gated SET transistor is provided by applicants, generally designated 110.
  • Source and drain electrodes S, D are sandwiched
  • a nanoparticle QD and capping ligand or other insulating material I are disposed in a well 116
  • a metal layer 118 is
  • nanoparticle QD disposed above nanoparticle QD to form the base of the chemical gate of SET transistor 110.
  • a plurality of molecular recognition elements A are attached to
  • a nanoparticle QD is attached by means of a
  • Probe tip 124 may be a platinum-iridium (Pr-lr) tip.
  • Pr-lr platinum-iridium
  • test surface 122 For example, the response of probe tip 120 in the presence of methane (CH 3 ) will differ from the response in the presence of hydroxide (OH).
  • a surface scan performed by probe tip 120 will generate information which may be rasterized to produce an image indicative of the chemical signature of test surface 122.
  • a molecular receptor may be attached to either nanoparticle QD or ligand L in order to scan for a
  • an SET-based chemical sensor may be constructed with a gate which does require an additional analyte-specific binding agent for its successful operation.
  • the pH-gated sensor 60 in Figure 10 is one example.
  • Another example is the embodiment illustrated in Figure 20, which may be used as a carbon monoxide (CO) detector, generally designated 130.
  • a layer 132 of platinum e.g., 5 nm is
  • a Pt-PtO-Pt nanoparticle-PtO-Pt double-tunnel junction J is formed, with
  • detector 130 is sensitive to the presence of CO because Pt-CO adsorption
  • Similar sensors may be constructed by generalizing this approach; that is, several different metal/metal-oxide combinations are possible which are known to bind small molecules of interest in chemical sensing (Ti and Sn, for example).
  • an electronic device for sensing chemical and/or biological substances wherein the transducer element operates according to single-electron transfer phenomena and is highly responsive to molecular binding events.
  • the device can be constructed by means of self-assembly methods, is extremely small, and consumes a very low amount of power.
  • the sensitivity, selectivity, accuracy and other properties of this SET-based device are superior to conventional FET-based devices.
  • a very large number of these devices can be integrated into a single chip or substrate and utilized in connection with a wide variety of sensing systems.

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  • Chemical Kinetics & Catalysis (AREA)
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Abstract

L'invention concerne un transistor (60) à effet quantique à déclenchement chimique, comportant une caractéristique courant-tension prédéterminée et conçu pour être utilisé comme capteur chimique ou biologique fonctionnant à température ambiante. Le transistor à effet quantique comporte un substrat (Sub) constitué d'une première matière isolante, des électrodes de source (S) et de drain (D) placées sur le substrat, et une nanoparticule (L) métallique, placée entre les électrodes de source et de drain, qui présente une dimension spatiale approximativement égale ou inférieure à 12 nm. Un agent de liaison spécifique d'analyte est placé sur une surface de la nanoparticule. Un événement de liaison se produisant entre un analyte voulu et l'agent de liaison provoque une modification détectable de la caractéristique courant-tension.
PCT/US2000/022747 1999-08-18 2000-08-18 Dispositifs de detection utilisant des transistors a effet quantique a declenchement chimique Ceased WO2001013432A1 (fr)

Priority Applications (3)

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AU77006/00A AU7700600A (en) 1999-08-18 2000-08-18 Sensing devices using chemically-gated single electron transistors
JP2001517431A JP2003507889A (ja) 1999-08-18 2000-08-18 化学的にゲート動作する単一電子トランジスタを使用したセンシングデバイス
EP00966700A EP1212795A4 (fr) 1999-08-18 2000-08-18 Dispositifs de detection utilisant des transistors a effet quantique a declenchement chimique

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Cited By (28)

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Publication number Priority date Publication date Assignee Title
US6324523B1 (en) * 1997-09-30 2001-11-27 Merrill Lynch & Co., Inc. Integrated client relationship management processor
US6483125B1 (en) * 2001-07-13 2002-11-19 North Carolina State University Single electron transistors in which the thickness of an insulating layer defines spacing between electrodes
EP1342077A1 (fr) * 2000-11-24 2003-09-10 Sahltech I Göteborg AB Procede permettant de detecteur des molecules ou des reactions chimiques en mesurant la variation de conductance
US6653653B2 (en) 2001-07-13 2003-11-25 Quantum Logic Devices, Inc. Single-electron transistors and fabrication methods in which a projecting feature defines spacing between electrodes
US6673717B1 (en) 2002-06-26 2004-01-06 Quantum Logic Devices, Inc. Methods for fabricating nanopores for single-electron devices
DE10228260A1 (de) * 2002-06-25 2004-01-22 Bayer Ag Methode und Vorrichtung zum impedimetrischen Nachweis eines oder mehrerer Analyten in einer Probe
WO2005048350A3 (fr) * 2003-11-07 2005-11-17 Qinetiq Ltd Dispositif de detection a transistor electronique unique moleculaire
EP1392860A4 (fr) * 2001-04-23 2006-11-29 Samsung Electronics Co Ltd Puce de detection moleculaire comprenant un transistor mosfet, dispositif de detection moleculaire utilisant ladite puce et procede de detection moleculaire faisant appel au dit dispositif
WO2007084077A1 (fr) * 2006-01-20 2007-07-26 Agency For Science, Technology And Research Cellule de biocapteur et réseau de biocapteurs
DE10163557B4 (de) * 2001-12-21 2007-12-06 Forschungszentrum Jülich GmbH Transistorbasierter Sensor mit besonders ausgestalteter Gateelektrode zur hochempfindlichen Detektion von Analyten
US7615343B2 (en) 2003-04-29 2009-11-10 Bruker Daltonik, Gmbh Electrical readout of the binding of analyte molecules to probe molecules
US7786472B2 (en) * 2006-03-20 2010-08-31 Arizona Board of Regents/Behalf of University of Arizona Quantum interference effect transistor (QuIET)
US7947485B2 (en) * 2005-06-03 2011-05-24 Hewlett-Packard Development Company, L.P. Method and apparatus for molecular analysis using nanoelectronic circuits
EP2685251A3 (fr) * 2003-08-29 2014-03-05 Japan Science and Technology Agency Transistor à effet de champ, transistor à électron unique et capteur l'utilisant
WO2016100049A1 (fr) * 2014-12-18 2016-06-23 Edico Genome Corporation Transistor à effet de champ chimiquement sensible
US9618474B2 (en) 2014-12-18 2017-04-11 Edico Genome, Inc. Graphene FET devices, systems, and methods of using the same for sequencing nucleic acids
US9859394B2 (en) 2014-12-18 2018-01-02 Agilome, Inc. Graphene FET devices, systems, and methods of using the same for sequencing nucleic acids
US9857328B2 (en) 2014-12-18 2018-01-02 Agilome, Inc. Chemically-sensitive field effect transistors, systems and methods for manufacturing and using the same
RU178317U1 (ru) * 2017-02-17 2018-03-29 Федеральное государственное бюджетное образовательное учреждение высшего образования "Московский государственный университет имени М.В. Ломоносова" (МГУ) Полевой транзистор для определения биологически активных соединений
US10006910B2 (en) 2014-12-18 2018-06-26 Agilome, Inc. Chemically-sensitive field effect transistors, systems, and methods for manufacturing and using the same
US10020300B2 (en) 2014-12-18 2018-07-10 Agilome, Inc. Graphene FET devices, systems, and methods of using the same for sequencing nucleic acids
US10811539B2 (en) 2016-05-16 2020-10-20 Nanomedical Diagnostics, Inc. Graphene FET devices, systems, and methods of using the same for sequencing nucleic acids
CN112513888A (zh) * 2018-05-29 2021-03-16 首尔大学校产学协力团 脂质纳米片
CN116593561A (zh) * 2023-03-23 2023-08-15 西安电子科技大学 基于倒t形负电容隧穿场效应晶体管的生物传感器及制备方法
US11782057B2 (en) 2014-12-18 2023-10-10 Cardea Bio, Inc. Ic with graphene fet sensor array patterned in layers above circuitry formed in a silicon based cmos wafer
US11921112B2 (en) 2014-12-18 2024-03-05 Paragraf Usa Inc. Chemically-sensitive field effect transistors, systems, and methods for manufacturing and using the same
US12298301B2 (en) 2014-12-18 2025-05-13 Cardea Bio, Inc. Chemically-sensitive field effect transistors, systems, and methods for manufacturing and using the same
US12372521B2 (en) 2014-04-28 2025-07-29 Cardea Bio, Inc. Chemically differentiated sensor array

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050036905A1 (en) * 2003-08-12 2005-02-17 Matsushita Electric Works, Ltd. Defect controlled nanotube sensor and method of production
JP4982728B2 (ja) * 2004-03-31 2012-07-25 独立行政法人物質・材料研究機構 単一電子素子の製造方法
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JP2008192712A (ja) * 2007-02-01 2008-08-21 Japan Science & Technology Agency トンネル磁気抵抗素子
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JP5737655B2 (ja) * 2011-07-13 2015-06-17 国立大学法人広島大学 半導体センサ
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Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5922537A (en) * 1996-11-08 1999-07-13 N.o slashed.AB Immunoassay, Inc. Nanoparticles biosensor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5922537A (en) * 1996-11-08 1999-07-13 N.o slashed.AB Immunoassay, Inc. Nanoparticles biosensor

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
BROUSSEAU L.C.: "pH-Gated single-electron tunneling in chemically modified gold nanoclusters", JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, vol. 120, no. 30, August 1998 (1998-08-01), pages 7645 - 7646, XP002935021 *
FELDHEIM D.L. ET AL.: "Self-assembly of single electron transistors and related devices", CHEMICAL SOCIETY REVIEWS, vol. 27, no. 1, February 1998 (1998-02-01), pages 1 - 12, XP002935020 *
See also references of EP1212795A4 *

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US6324523B1 (en) * 1997-09-30 2001-11-27 Merrill Lynch & Co., Inc. Integrated client relationship management processor
EP1342077A1 (fr) * 2000-11-24 2003-09-10 Sahltech I Göteborg AB Procede permettant de detecteur des molecules ou des reactions chimiques en mesurant la variation de conductance
US7781167B2 (en) 2001-04-23 2010-08-24 Samsung Electronics Co., Ltd. Molecular detection methods using molecular detection chips including a metal oxide semiconductor field effect transistor
EP1392860A4 (fr) * 2001-04-23 2006-11-29 Samsung Electronics Co Ltd Puce de detection moleculaire comprenant un transistor mosfet, dispositif de detection moleculaire utilisant ladite puce et procede de detection moleculaire faisant appel au dit dispositif
US7863140B2 (en) 2001-04-23 2011-01-04 Samsung Electronics Co., Ltd. Methods of making a molecular detection chip having a metal oxide silicon field effect transistor on sidewalls of a micro-fluid channel
US7235389B2 (en) 2001-04-23 2007-06-26 Samsung Electronics Co., Ltd. Molecular detection device and chip including MOSFET
US6483125B1 (en) * 2001-07-13 2002-11-19 North Carolina State University Single electron transistors in which the thickness of an insulating layer defines spacing between electrodes
JP4814487B2 (ja) * 2001-07-13 2011-11-16 ノース・キャロライナ・ステイト・ユニヴァーシティ 絶縁層の厚さが電極間の間隔を形成する単一電子トランジスタ及び製造方法
US6784082B2 (en) 2001-07-13 2004-08-31 North Carolina State University Methods of fabricating single electron transistors in which the thickness of an insulating layer defines spacing between electrodes
US6653653B2 (en) 2001-07-13 2003-11-25 Quantum Logic Devices, Inc. Single-electron transistors and fabrication methods in which a projecting feature defines spacing between electrodes
JP2005526371A (ja) * 2001-07-13 2005-09-02 ノース・キャロライナ・ステイト・ユニヴァーシティ 絶縁層の厚さが電極間の間隔を形成する単一電子トランジスタ及び製造方法
DE10163557B4 (de) * 2001-12-21 2007-12-06 Forschungszentrum Jülich GmbH Transistorbasierter Sensor mit besonders ausgestalteter Gateelektrode zur hochempfindlichen Detektion von Analyten
DE10228260A1 (de) * 2002-06-25 2004-01-22 Bayer Ag Methode und Vorrichtung zum impedimetrischen Nachweis eines oder mehrerer Analyten in einer Probe
US6673717B1 (en) 2002-06-26 2004-01-06 Quantum Logic Devices, Inc. Methods for fabricating nanopores for single-electron devices
US7615343B2 (en) 2003-04-29 2009-11-10 Bruker Daltonik, Gmbh Electrical readout of the binding of analyte molecules to probe molecules
US8772099B2 (en) 2003-08-29 2014-07-08 Japan Science And Technology Agency Method of use of a field-effect transistor, single-electron transistor and sensor
US9506892B2 (en) 2003-08-29 2016-11-29 Japan Science And Technology Agency Field-effect transistor, single-electron transistor and sensor using the same
EP2685251A3 (fr) * 2003-08-29 2014-03-05 Japan Science and Technology Agency Transistor à effet de champ, transistor à électron unique et capteur l'utilisant
US8766326B2 (en) 2003-08-29 2014-07-01 Japan Science And Technology Agency Field-effect transistor, single-electron transistor and sensor
US7619265B2 (en) 2003-11-07 2009-11-17 Qinetiq Limited Molecular single electron transistor (MSET) detector device
WO2005048350A3 (fr) * 2003-11-07 2005-11-17 Qinetiq Ltd Dispositif de detection a transistor electronique unique moleculaire
US7947485B2 (en) * 2005-06-03 2011-05-24 Hewlett-Packard Development Company, L.P. Method and apparatus for molecular analysis using nanoelectronic circuits
WO2007084077A1 (fr) * 2006-01-20 2007-07-26 Agency For Science, Technology And Research Cellule de biocapteur et réseau de biocapteurs
US7786472B2 (en) * 2006-03-20 2010-08-31 Arizona Board of Regents/Behalf of University of Arizona Quantum interference effect transistor (QuIET)
US12372521B2 (en) 2014-04-28 2025-07-29 Cardea Bio, Inc. Chemically differentiated sensor array
US10429342B2 (en) 2014-12-18 2019-10-01 Edico Genome Corporation Chemically-sensitive field effect transistor
US10429381B2 (en) 2014-12-18 2019-10-01 Agilome, Inc. Chemically-sensitive field effect transistors, systems, and methods for manufacturing and using the same
US9857328B2 (en) 2014-12-18 2018-01-02 Agilome, Inc. Chemically-sensitive field effect transistors, systems and methods for manufacturing and using the same
WO2016100049A1 (fr) * 2014-12-18 2016-06-23 Edico Genome Corporation Transistor à effet de champ chimiquement sensible
US10006910B2 (en) 2014-12-18 2018-06-26 Agilome, Inc. Chemically-sensitive field effect transistors, systems, and methods for manufacturing and using the same
US10020300B2 (en) 2014-12-18 2018-07-10 Agilome, Inc. Graphene FET devices, systems, and methods of using the same for sequencing nucleic acids
US11921112B2 (en) 2014-12-18 2024-03-05 Paragraf Usa Inc. Chemically-sensitive field effect transistors, systems, and methods for manufacturing and using the same
US9859394B2 (en) 2014-12-18 2018-01-02 Agilome, Inc. Graphene FET devices, systems, and methods of using the same for sequencing nucleic acids
US10494670B2 (en) 2014-12-18 2019-12-03 Agilome, Inc. Graphene FET devices, systems, and methods of using the same for sequencing nucleic acids
US10607989B2 (en) 2014-12-18 2020-03-31 Nanomedical Diagnostics, Inc. Graphene FET devices, systems, and methods of using the same for sequencing nucleic acids
US11782057B2 (en) 2014-12-18 2023-10-10 Cardea Bio, Inc. Ic with graphene fet sensor array patterned in layers above circuitry formed in a silicon based cmos wafer
US9618474B2 (en) 2014-12-18 2017-04-11 Edico Genome, Inc. Graphene FET devices, systems, and methods of using the same for sequencing nucleic acids
US11536722B2 (en) 2014-12-18 2022-12-27 Cardea Bio, Inc. Chemically-sensitive field effect transistors, systems, and methods for manufacturing and using the same
US12298301B2 (en) 2014-12-18 2025-05-13 Cardea Bio, Inc. Chemically-sensitive field effect transistors, systems, and methods for manufacturing and using the same
US11732296B2 (en) 2014-12-18 2023-08-22 Cardea Bio, Inc. Two-dimensional channel FET devices, systems, and methods of using the same for sequencing nucleic acids
US10811539B2 (en) 2016-05-16 2020-10-20 Nanomedical Diagnostics, Inc. Graphene FET devices, systems, and methods of using the same for sequencing nucleic acids
RU178317U1 (ru) * 2017-02-17 2018-03-29 Федеральное государственное бюджетное образовательное учреждение высшего образования "Московский государственный университет имени М.В. Ломоносова" (МГУ) Полевой транзистор для определения биологически активных соединений
CN112513888B (zh) * 2018-05-29 2024-04-23 首尔大学校产学协力团 脂质纳米片
US12307346B2 (en) 2018-05-29 2025-05-20 Seoul National University R&Db Foundation Lipid nanotablet
CN112513888A (zh) * 2018-05-29 2021-03-16 首尔大学校产学协力团 脂质纳米片
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