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WO2001011700A1 - Systeme a fonction de transistor - Google Patents

Systeme a fonction de transistor Download PDF

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Publication number
WO2001011700A1
WO2001011700A1 PCT/DE2000/002571 DE0002571W WO0111700A1 WO 2001011700 A1 WO2001011700 A1 WO 2001011700A1 DE 0002571 W DE0002571 W DE 0002571W WO 0111700 A1 WO0111700 A1 WO 0111700A1
Authority
WO
WIPO (PCT)
Prior art keywords
arrangement according
organic substance
charge
organic
transporting organic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/DE2000/002571
Other languages
German (de)
English (en)
Inventor
Jürgen SIMMERER
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Publication of WO2001011700A1 publication Critical patent/WO2001011700A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/731—Liquid crystalline materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight

Definitions

  • the invention relates to an arrangement, in particular a component with a transistor function, which has a gate electrode, a gate dielectric, a source and a dram electrode and a layer of at least one charge-transporting organic substance.
  • FET field-effect transistor
  • TFT thin film transistor
  • silicon is usually used as the active semiconductor material in one of its manifestations, for example amorphous silicon in AM LCDs; for example, gallium arsenide can also be used.
  • amorphous silicon in AM LCDs for example, gallium arsenide can also be used.
  • gallium arsenide can also be used.
  • the production of such transistors is comparatively complex and expensive.
  • high process temperatures that occur during manufacture limit the possible areas of use.
  • the use of flexible film substrates would allow the production of flexible display films, but suitable films have so far not had the required temperature stability.
  • Thin film transistors are also known, in which organic materials are used as active semiconductor material. These transistors are usually referred to as “organic transistors * (OTs). Because their mode of operation is analogous to the function of conventional field-effect transistors (FETs) made of silicon, the term “organic field-effect transistors * (OFETs) is often used for this.
  • OFETs organic field-effect transistors *
  • OTs are known in which not only the active semiconductor consists of an organic or polymeric material, but also the other components required for the function, such as electrodes and dielectric, are made up entirely or partially of organic or polymeric materials. If a component with a transistor function consists entirely of organic materials, it is referred to as an “All-Organic Thm Film Transistor”.
  • Organic transistors can be made on flexible substrates (plastic films). Flexible electronic circuits that can be implemented in this way can be used in a wide variety of applications, such as chip cards or smart cards, transponders and flexible displays. Organic transistors also have other advantages in terms of manufacturing costs: Since their manufacture using the simplest process technology (liquid phase processes such as
  • p-channel transistors or n-channel transistors are present. Both versions (p-type and n-type) exist both in conventional field-effect transistors made of silicon or gallium arsenide and in organic transistors.
  • organic functional layers in particular the organic semiconductors
  • the rings only over a very ge ⁇ or no solubility m grouting a suitable lots agent is preferably used the method of thermal evaporation under high vacuum.
  • the process of thermal vapor deposition is, however, comparatively complex and costly.
  • liquid phase processes such as spin-on of suitable solutions or printing techniques
  • a prerequisite for liquid phase processes is sufficient solubility of the organic semiconductor materials in suitable solvents.
  • the underlying manufacturing processes are particularly simple and therefore inexpensive.
  • Organic semiconductor materials in the form of functional molecules are often used in organic transistors, which are not soluble in suitable solvents and therefore only by vacuum deposition, i.e. Evaporation in a high vacuum, for example by thermal evaporation or by "pulsed laser deposition", can be applied (see, for example: EP-OS 0 825 657; "IEEE Electron Device Letters", Vol. 18 (1997), pages 606 to 608;
  • Organic substances can be applied from the liquid phase by known processes (spin coating, printing processes).
  • spin coating, printing processes these are materials that do not yet have suitable semiconductor properties in soluble form.
  • the corresponding materials with the required semiconductor properties on the other hand, are insoluble in suitable solvents.
  • This problem is countered by converting the soluble non-semiconducting substances into insoluble semiconductors by means of a chemical conversion process (see, for example: "Science”, Vol. 270 (1995), pages 972 to 974).
  • a disadvantage is here, however, that either aggressive and environmentally harmful process gases, such as hydrogen chloride (HC1), must be used or that toxic reaction products (elimination products) are formed in the conversion process.
  • HC1 hydrogen chloride
  • the object of the invention is an arrangement (with transistor function) of the type mentioned with at least one charge transport erenden organic substance, that is an organic semiconductor, indicate that can be provided inexpensively forth ⁇ and good transistor characteristics, the particular ⁇ a high stability, has.
  • the charge-transporting organic substance is electrochemically reversibly oxidizable at least twice anodically or at least twice reversibly reducible cathodically, is soluble in at least one solvent and has a molecular weight of up to 2000 g / mol.
  • the substance has sufficient redox stability: For transporting positive charges (punctures), i.e. in the case of a p-channel transistor, the substance must be anodically reversibly oxidizable at least twice. This means that in the cyclic voltammogram, recorded at room temperature in an inert solvent, at least two chemically reversible oxidation waves occur. For the transport of negative charges (electrons), i.e. in the
  • the substance In the case of an n-channel transistor, the substance must be cathodically reversibly reducible at least twice. This means that in the cyclic voltammogram, recorded at room temperature in an inert solvent, at least two chemically reversible reduction waves occur.
  • the substance has sufficient solubility in at least one solvent and is therefore suitable for liquid phase processing.
  • the substance has a molecular weight of at most 2000 g / mol. Good transistor properties are achieved when the organic semiconductor has a high degree of molecular order. This is functional Substances, the size or molecular weight of which does not exceed the stated value.
  • the redox stability of the charge-transporting organic substance is an essential criterion for the stability of the arrangement with transistor function.
  • this stability criterion was not previously known (cf. “Synthetic Metals”, vol. 87 (1997), pages 53 to 59).
  • the charge-transporting organic substance preferably shows in the
  • Cyclic voltammogram shows a reversible behavior during at least ten successive oxidation or reduction cycles.
  • the arrangement (with transistor function) according to the invention is also referred to as an organic transistor.
  • This is understood to be a transistor in which the active semiconductor material consists of an organic sweet dance.
  • the other components, such as electrodes and dielectric, can consist of organic or polymeric substances as well as inorganic substances.
  • the organic transistor according to the invention comprises all arrangements in hybrid technology with organic-inorganic combinations.
  • the arrangement according to the invention is characterized in that the field effect mobility is at least 110 "4 cm 2 / Vs.
  • This arrangement has a layer of at least one organic semiconductor.
  • the thickness of this layer is advantageously between 5 nm and 10 ⁇ m, preferably between 10 and 100 nm.
  • the organic semiconductor is advantageously an aromatic hydrocarbon, a heteroaromatic compound or a polyene compound, these substances each having at least one solubility-imparting substituent.
  • the organic semiconductor is preferably a derivative of one of the following compounds: benzene, naphthalene, naph- thacene, pentacene, biphenyl, terphenyl, quaterphenyl, qumque-phenyl, sexiphenyl, triphenylene, chrysene, pyrene, naphthalocyanine, porphyry, perylene, phenanthrene, truxen, fluorene and thiophene or a corresponding aromatic moiety, with one or more ring carbon atoms replaced by oxygen, nitrogen or sulfur. If necessary, one or more double bonds can be hydrogenated.
  • the solubility-imparting substituent can be one of the following radicals: -C ⁇ to C 18 alkyl, C 2 - to -C 2 alkenyl, C 3 - to C 7 cycloalkyl, C-- to C 5 aralkyl and C 3 - ois C ⁇ c ⁇ aryl.
  • These radicals can additionally carry an alkoxy, carbonyl, alkoxycarbonyl, cyano, halogen or amino group, it being possible for the A.lkoxy groups to have 1 to 18 carbon atoms.
  • circuits can possibly perform logical functions (logical AND, logical OR, etc.). If necessary, further electronic components can also be present, for example diodes, transistors made of silicon or gallium arsenide, and passive components, such as coils, resistors and capacitors. This also includes all arrangements that contain transistors of different polarities (n-type, p-type). If necessary, the different polarities can be realized with different transistor arrangements, for example an n-type based on silicon and a p-type according to the invention. Inorganic-organic hybrid circuits are known per se (see, for example: US Pat. No. 5,625,199; "Applied Physics Letters", Vol. 69 (1996), pages 4227 to 4229).
  • Chip cards or smart cards • Transponders or ID tags, ie devices for the electronic identification of objects or living things (animals, plants). The invention will be explained in more detail with reference to exemplary embodiments and a figure.
  • a gate electrode 11 is arranged on a substrate 10. Both rigid supports, such as silicon wafers, and flexible supports, such as plastic films, can be used as the substrate, and the substrate can also be transparent (glass, transparent plastic film).
  • the gate electrode can consist, for example, of a metal, such as gold, or of a conductive plastic, such as polyamine.
  • the gate electrode 11 is surrounded by a gate dielectric 12.
  • a gate dielectric 12 Both inorganic and organic or polymeric materials can be used as the gate dielectric.
  • an inorganic insulator such as silicon dioxide or silicon nitride, or an insulating plastic, such as poly (4-methylphenol), can be used.
  • a source electrode 13 and a dram electrode 14 are arranged on the gate dielectric 12.
  • both inorganic materials for example metals such as gold, and organic or polymeric materials, for example conductive polymers such as polyamine, can be used for these electrodes.
  • the electrodes, including the gate electrode can also be constructed using the multilayer method and comprise several different components. It is also possible to use different materials for the individual electrodes.
  • This layer can have one or more of the compounds described in more detail above. example 1
  • the surface of a silicon wafer is thermally oxidized, so that an oxide layer with a thickness of 400 nm is formed; the silicon wafer acts as the gate electrode and the oxide layer is the gate dielectric.
  • a solution of 4, 4 '''' bis (n-octyl) -qumquephenyl is applied to the preheated wafer (0.5% solution in hot chlorobenzene).
  • gold electrodes parallel to one another are evaporated by means of a shadow mask (length of the gold electrodes: 1 mm; distance between the gold electrodes: 20 ⁇ m; pressure during the electrode deposition: 1-10 "5 mbar; evaporation rate: 0 , 5 to 1 nm / s; thickness of the gold electrodes: approx. 200 nm).
  • the transistor arrangement is contacted with a tip measuring station (gold electrodes as source or drain electrodes, silicon as gate electrode).
  • a tip measuring station gold electrodes as source or drain electrodes, silicon as gate electrode.
  • the component produced shows the function of a field-effect transistor.
  • the field effect mobility is about 110 "4 cm 2 / Vs.
  • the surface of a silicon wafer is thermally oxidized, so that an oxide layer with a thickness of 400 nm is formed; the silicon wafer acts as the gate electrode and the oxide layer is the gate dielectric.
  • Gold electrodes parallel to each other are evaporated onto the silicon dioxide layer using a shadow mask (length of the gold electrodes: 1 mm; distance between the gold electrodes: 20 ⁇ m; pressure during the electrode deposition: 1-10 "5 mbar; vapor deposition rate : 0.5 to 1 nm / s; thickness of the gold electrodes: approx.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)

Abstract

L'invention concerne un système à fonction de transistor, notamment un composant, comportant une électrode-grille, un diélectrique-grille, une électrode-source et une électrode-drain, ainsi qu'une couche à base d'au moins une substance organique transportant une charge. Cette substance organique qui transporte une charge peut être oxydée de manière réversible électrochimiquement au moins deux fois par voie anodique ou être réduite de manière réversible au moins deux fois par voie cathodique. Elle peut être soluble au moins dans un solvant et présente un poids moléculaire allant jusqu'à 2.000 g/mole.
PCT/DE2000/002571 1999-08-06 2000-08-02 Systeme a fonction de transistor Ceased WO2001011700A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19937262A DE19937262A1 (de) 1999-08-06 1999-08-06 Anordnung mit Transistor-Funktion
DE19937262.4 1999-08-06

Publications (1)

Publication Number Publication Date
WO2001011700A1 true WO2001011700A1 (fr) 2001-02-15

Family

ID=7917519

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2000/002571 Ceased WO2001011700A1 (fr) 1999-08-06 2000-08-02 Systeme a fonction de transistor

Country Status (2)

Country Link
DE (1) DE19937262A1 (fr)
WO (1) WO2001011700A1 (fr)

Families Citing this family (30)

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Publication number Priority date Publication date Assignee Title
EP1309994A2 (fr) 2000-08-18 2003-05-14 Siemens Aktiengesellschaft Composant electronique organique encapsule, son procede de production et son utilisation
DE10045192A1 (de) 2000-09-13 2002-04-04 Siemens Ag Organischer Datenspeicher, RFID-Tag mit organischem Datenspeicher, Verwendung eines organischen Datenspeichers
DE10061297C2 (de) 2000-12-08 2003-05-28 Siemens Ag Verfahren zur Sturkturierung eines OFETs
DE10105914C1 (de) 2001-02-09 2002-10-10 Siemens Ag Organischer Feldeffekt-Transistor mit fotostrukturiertem Gate-Dielektrikum und ein Verfahren zu dessen Erzeugung
DE10151036A1 (de) 2001-10-16 2003-05-08 Siemens Ag Isolator für ein organisches Elektronikbauteil
DE10151440C1 (de) 2001-10-18 2003-02-06 Siemens Ag Organisches Elektronikbauteil, Verfahren zu seiner Herstellung und seine Verwendung
DE10251317B4 (de) * 2001-12-04 2006-06-14 Infineon Technologies Ag Halbleiterchip
DE10160732A1 (de) 2001-12-11 2003-06-26 Siemens Ag Organischer Feld-Effekt-Transistor mit verschobener Schwellwertspannung und Verwendung dazu
DE10209400A1 (de) * 2002-03-04 2003-10-02 Infineon Technologies Ag Transponderschaltung mit einer Gleichrichterschaltung sowie Verfahren zur Herstellung einer Transponderschaltung mit einer Gleichrichterschaltung
DE10212640B4 (de) 2002-03-21 2004-02-05 Siemens Ag Logische Bauteile aus organischen Feldeffekttransistoren
EP1357226B1 (fr) * 2002-04-22 2010-08-11 Hueck Folien GmbH Substrats avec couches électriquement conductrices
DE10226370B4 (de) 2002-06-13 2008-12-11 Polyic Gmbh & Co. Kg Substrat für ein elektronisches Bauteil, Verwendung des Substrates, Verfahren zur Erhöhung der Ladungsträgermobilität und Organischer Feld-Effekt Transistor (OFET)
EP1525630A2 (fr) 2002-07-29 2005-04-27 Siemens Aktiengesellschaft Composant electronique comprenant des materiaux fonctionnels majoritairement organiques et procede pour le produire
DE10253154A1 (de) 2002-11-14 2004-05-27 Siemens Ag Messgerät zur Bestimmung eines Analyten in einer Flüssigkeitsprobe
ES2282708T3 (es) 2002-11-19 2007-10-16 POLYIC GMBH & CO. KG Componente electronico organico con capa funcional semiconductora estructurada y metodo para producir el mismo.
DE10302149A1 (de) 2003-01-21 2005-08-25 Siemens Ag Verwendung leitfähiger Carbon-black/Graphit-Mischungen für die Herstellung von low-cost Elektronik
EP1629544B1 (fr) * 2003-05-12 2008-11-19 Cambridge Enterprise Limited Transistor polymere
DE10339036A1 (de) 2003-08-25 2005-03-31 Siemens Ag Organisches elektronisches Bauteil mit hochaufgelöster Strukturierung und Herstellungsverfahren dazu
DE10340643B4 (de) 2003-09-03 2009-04-16 Polyic Gmbh & Co. Kg Druckverfahren zur Herstellung einer Doppelschicht für Polymerelektronik-Schaltungen, sowie dadurch hergestelltes elektronisches Bauelement mit Doppelschicht
DE10340644B4 (de) * 2003-09-03 2010-10-07 Polyic Gmbh & Co. Kg Mechanische Steuerelemente für organische Polymerelektronik
DE102004040831A1 (de) 2004-08-23 2006-03-09 Polyic Gmbh & Co. Kg Funketikettfähige Umverpackung
DE102004059465A1 (de) 2004-12-10 2006-06-14 Polyic Gmbh & Co. Kg Erkennungssystem
DE102004059464A1 (de) 2004-12-10 2006-06-29 Polyic Gmbh & Co. Kg Elektronikbauteil mit Modulator
DE102004063435A1 (de) 2004-12-23 2006-07-27 Polyic Gmbh & Co. Kg Organischer Gleichrichter
DE102005009820A1 (de) 2005-03-01 2006-09-07 Polyic Gmbh & Co. Kg Elektronikbaugruppe mit organischen Logik-Schaltelementen
DE102005009819A1 (de) 2005-03-01 2006-09-07 Polyic Gmbh & Co. Kg Elektronikbaugruppe
DE102005017655B4 (de) 2005-04-15 2008-12-11 Polyic Gmbh & Co. Kg Mehrschichtiger Verbundkörper mit elektronischer Funktion
DE102005031448A1 (de) 2005-07-04 2007-01-11 Polyic Gmbh & Co. Kg Aktivierbare optische Schicht
DE102005035589A1 (de) 2005-07-29 2007-02-01 Polyic Gmbh & Co. Kg Verfahren zur Herstellung eines elektronischen Bauelements
DE102005044306A1 (de) 2005-09-16 2007-03-22 Polyic Gmbh & Co. Kg Elektronische Schaltung und Verfahren zur Herstellung einer solchen

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