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WO2001004388A3 - Edge meniscus control of crystalline ribbon growth - Google Patents

Edge meniscus control of crystalline ribbon growth Download PDF

Info

Publication number
WO2001004388A3
WO2001004388A3 PCT/US2000/017651 US0017651W WO0104388A3 WO 2001004388 A3 WO2001004388 A3 WO 2001004388A3 US 0017651 W US0017651 W US 0017651W WO 0104388 A3 WO0104388 A3 WO 0104388A3
Authority
WO
WIPO (PCT)
Prior art keywords
crystalline ribbon
meniscus
meniscus control
ribbon growth
pair
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2000/017651
Other languages
French (fr)
Other versions
WO2001004388A2 (en
Inventor
Robert E Janoch Jr
Eric Bruce Gabaree
Sean M Azarowski
Brian Shea
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Evergreen Solar Inc
Original Assignee
Evergreen Solar Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Evergreen Solar Inc filed Critical Evergreen Solar Inc
Priority to JP2001509582A priority Critical patent/JP2003504295A/en
Priority to EP00975147A priority patent/EP1198626A2/en
Publication of WO2001004388A2 publication Critical patent/WO2001004388A2/en
Publication of WO2001004388A3 publication Critical patent/WO2001004388A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/007—Pulling on a substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/24—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using mechanical means, e.g. shaping guides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

An apparatus for growing a crystalline ribbon includes a crucible for holding a melt of a semiconductor material, a pair of strings passing through a pair of openings in the crucible, and a meniscus controller. The pair of strings defines edges of the crystalline ribbon grown from the melt. The crystalline ribbon and an upper surface of the melt form a meniscus. The meniscus controller controls a property of the meniscus near the edges of the crystalline ribbon.
PCT/US2000/017651 1999-07-02 2000-06-27 Edge meniscus control of crystalline ribbon growth Ceased WO2001004388A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2001509582A JP2003504295A (en) 1999-07-02 2000-06-27 Edge meniscus control for crystal ribbon growth
EP00975147A EP1198626A2 (en) 1999-07-02 2000-06-27 Edge meniscus control of crystalline ribbon growth

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US34761599A 1999-07-02 1999-07-02
US09/347,615 1999-07-02

Publications (2)

Publication Number Publication Date
WO2001004388A2 WO2001004388A2 (en) 2001-01-18
WO2001004388A3 true WO2001004388A3 (en) 2001-08-02

Family

ID=23364482

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2000/017651 Ceased WO2001004388A2 (en) 1999-07-02 2000-06-27 Edge meniscus control of crystalline ribbon growth

Country Status (3)

Country Link
EP (1) EP1198626A2 (en)
JP (1) JP2003504295A (en)
WO (1) WO2001004388A2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1906322B (en) * 2003-12-24 2010-05-05 索拉尔福斯公司 Apparatus for depositing a polysilicon layer on a substrate

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7407550B2 (en) 2002-10-18 2008-08-05 Evergreen Solar, Inc. Method and apparatus for crystal growth
US6814802B2 (en) 2002-10-30 2004-11-09 Evergreen Solar, Inc. Method and apparatus for growing multiple crystalline ribbons from a single crucible
TW200700316A (en) * 2005-03-24 2007-01-01 Umicore Nv Process for the production of si by reduction of sicl4 with liquid zn
FR2884834B1 (en) * 2005-04-22 2007-06-08 Solarforce Soc Par Actions Sim METHOD OF DRAWING LOW THICK SEMICONDUCTOR RIBBONS
FR2887262B1 (en) * 2005-06-17 2007-07-27 Solarforce Soc Par Actions Sim CARBON TAPE FOR COVERING A THIN LAYER OF SEMICONDUCTOR MATERIAL AND METHOD FOR DEPOSITING SUCH A LAYER
US8304057B2 (en) * 2007-08-31 2012-11-06 Max Era, Inc. Ribbon crystal end string with multiple individual strings
CN101785116A (en) * 2007-08-31 2010-07-21 长青太阳能股份有限公司 String for reduced wetting of ribbon crystals
JP6958435B2 (en) * 2018-03-06 2021-11-02 東レ株式会社 Manufacturing method of coating head and web with coating film

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58194798A (en) * 1982-05-07 1983-11-12 Toshiba Corp Apparatus for growth of flat plate silicon crystal
FR2550965A1 (en) * 1983-08-30 1985-03-01 Comp Generale Electricite DEVICE FOR DEPOSITING A POLYCRYSTALLINE SILICON LAYER ON A CARBON RIBBON
US4627887A (en) * 1980-12-11 1986-12-09 Sachs Emanuel M Melt dumping in string stabilized ribbon growth
US4861416A (en) * 1985-04-04 1989-08-29 The United States Of America As Represented By The Administrator, National Aeronautics And Space Administration Ribbon growing method and apparatus
US5370078A (en) * 1992-12-01 1994-12-06 Wisconsin Alumni Research Foundation Method and apparatus for crystal growth with shape and segregation control

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4627887A (en) * 1980-12-11 1986-12-09 Sachs Emanuel M Melt dumping in string stabilized ribbon growth
JPS58194798A (en) * 1982-05-07 1983-11-12 Toshiba Corp Apparatus for growth of flat plate silicon crystal
FR2550965A1 (en) * 1983-08-30 1985-03-01 Comp Generale Electricite DEVICE FOR DEPOSITING A POLYCRYSTALLINE SILICON LAYER ON A CARBON RIBBON
US4861416A (en) * 1985-04-04 1989-08-29 The United States Of America As Represented By The Administrator, National Aeronautics And Space Administration Ribbon growing method and apparatus
US5370078A (en) * 1992-12-01 1994-12-06 Wisconsin Alumni Research Foundation Method and apparatus for crystal growth with shape and segregation control

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
ANON: "Filament guides for silicon-ribbon growth", NASA TECH BRIEFS., February 1986 (1986-02-01), NASA. WASHINGTON., US, XP002159840 *
PATENT ABSTRACTS OF JAPAN vol. 008, no. 030 (C - 209) 8 February 1984 (1984-02-08) *
ZOUTENDYKE: "Gas Jet meniscus control in ribbon growth", NASA TECH BRIEFS., March 1984 (1984-03-01), NASA. WASHINGTON., US, XP002159841 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1906322B (en) * 2003-12-24 2010-05-05 索拉尔福斯公司 Apparatus for depositing a polysilicon layer on a substrate

Also Published As

Publication number Publication date
JP2003504295A (en) 2003-02-04
WO2001004388A2 (en) 2001-01-18
EP1198626A2 (en) 2002-04-24

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