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WO2001094659A3 - Procede, appareil et cible de pulverisation permettant de limiter la formation d'arcs electriques - Google Patents

Procede, appareil et cible de pulverisation permettant de limiter la formation d'arcs electriques Download PDF

Info

Publication number
WO2001094659A3
WO2001094659A3 PCT/US2001/017338 US0117338W WO0194659A3 WO 2001094659 A3 WO2001094659 A3 WO 2001094659A3 US 0117338 W US0117338 W US 0117338W WO 0194659 A3 WO0194659 A3 WO 0194659A3
Authority
WO
WIPO (PCT)
Prior art keywords
sputtering target
target
fom
plasma
grain size
Prior art date
Application number
PCT/US2001/017338
Other languages
English (en)
Other versions
WO2001094659A2 (fr
Inventor
Philip George Pitcher
Zhihua Yan
Jaeyeon Kim
Michael Alan Rushing
Original Assignee
Honeywell Int Inc
Philip George Pitcher
Zhihua Yan
Jaeyeon Kim
Michael Alan Rushing
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Int Inc, Philip George Pitcher, Zhihua Yan, Jaeyeon Kim, Michael Alan Rushing filed Critical Honeywell Int Inc
Priority to AU6512601A priority Critical patent/AU6512601A/xx
Publication of WO2001094659A2 publication Critical patent/WO2001094659A2/fr
Publication of WO2001094659A3 publication Critical patent/WO2001094659A3/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

La présente invention concerne un procédé, un dispositif et une cible permettant de réaliser des films pulvérisés avec un plasma, la pulvérisation faisant intervenir l'utilisation d'une cible ayant une faible taille de grain et une faible concentration de défauts, afin de limiter la formation d'arcs électriques.
PCT/US2001/017338 2000-06-02 2001-05-29 Procede, appareil et cible de pulverisation permettant de limiter la formation d'arcs electriques WO2001094659A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU6512601A AU6512601A (en) 2000-06-02 2001-05-29 Sputtering method, apparatus, and target for reduced arcing

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US20850600P 2000-06-02 2000-06-02
US60/208,506 2000-06-02

Publications (2)

Publication Number Publication Date
WO2001094659A2 WO2001094659A2 (fr) 2001-12-13
WO2001094659A3 true WO2001094659A3 (fr) 2002-07-04

Family

ID=22774837

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/017338 WO2001094659A2 (fr) 2000-06-02 2001-05-29 Procede, appareil et cible de pulverisation permettant de limiter la formation d'arcs electriques

Country Status (2)

Country Link
AU (1) AU6512601A (fr)
WO (1) WO2001094659A2 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6896748B2 (en) * 2002-07-18 2005-05-24 Praxair S.T. Technology, Inc. Ultrafine-grain-copper-base sputter targets
CN102016088B (zh) 2008-09-30 2014-07-30 Jx日矿日石金属株式会社 高纯度铜以及通过电解制造高纯度铜的方法
US9441289B2 (en) 2008-09-30 2016-09-13 Jx Nippon Mining & Metals Corporation High-purity copper or high-purity copper alloy sputtering target, process for manufacturing the sputtering target, and high-purity copper or high-purity copper alloy sputtered film
DE102010046780A1 (de) * 2010-09-28 2012-03-29 Singulus Technologies Ag Beschichten von Substraten mit einer Legierung mittels Kathodenzerstäubung
WO2016140833A1 (fr) * 2015-03-02 2016-09-09 Tosoh Smd, Inc. Cible de pulvérisation cathodique possédant une géométrie cible de cambrure inverse
CN108026634A (zh) 2015-08-03 2018-05-11 霍尼韦尔国际公司 具有改善性质的无摩擦锻造铝合金溅射靶
US10900102B2 (en) 2016-09-30 2021-01-26 Honeywell International Inc. High strength aluminum alloy backing plate and methods of making
US11244815B2 (en) 2017-04-20 2022-02-08 Honeywell International Inc. Profiled sputtering target and method of making the same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5809393A (en) * 1994-12-23 1998-09-15 Johnson Matthey Electronics, Inc. Sputtering target with ultra-fine, oriented grains and method of making same
JPH11158614A (ja) * 1997-11-28 1999-06-15 Hitachi Metals Ltd スパッタリング用銅ターゲットおよびその製造方法
US5993621A (en) * 1997-07-11 1999-11-30 Johnson Matthey Electronics, Inc. Titanium sputtering target

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5809393A (en) * 1994-12-23 1998-09-15 Johnson Matthey Electronics, Inc. Sputtering target with ultra-fine, oriented grains and method of making same
US5993621A (en) * 1997-07-11 1999-11-30 Johnson Matthey Electronics, Inc. Titanium sputtering target
JPH11158614A (ja) * 1997-11-28 1999-06-15 Hitachi Metals Ltd スパッタリング用銅ターゲットおよびその製造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 1999, no. 11 30 September 1999 (1999-09-30) *

Also Published As

Publication number Publication date
AU6512601A (en) 2001-12-17
WO2001094659A2 (fr) 2001-12-13

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