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WO2001073507A1 - Liquid crystal display device - Google Patents

Liquid crystal display device Download PDF

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Publication number
WO2001073507A1
WO2001073507A1 PCT/JP2000/001861 JP0001861W WO0173507A1 WO 2001073507 A1 WO2001073507 A1 WO 2001073507A1 JP 0001861 W JP0001861 W JP 0001861W WO 0173507 A1 WO0173507 A1 WO 0173507A1
Authority
WO
WIPO (PCT)
Prior art keywords
liquid crystal
pixel electrode
substrate
electrodes
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2000/001861
Other languages
French (fr)
Japanese (ja)
Inventor
Kouji Hayakawa
Haruhisa Okumura
Ikuko Mori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to PCT/JP2000/001861 priority Critical patent/WO2001073507A1/en
Publication of WO2001073507A1 publication Critical patent/WO2001073507A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1343Electrodes
    • G02F1/134309Electrodes characterised by their geometrical arrangement
    • G02F1/134336Matrix
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1337Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G02F1/133707Structures for producing distorted electric fields, e.g. bumps, protrusions, recesses, slits in pixel electrodes
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/121Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode common or background
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/128Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode field shaping

Definitions

  • the present invention relates to a liquid crystal display device in which a plurality of pixel electrodes are two-dimensionally arranged, and more particularly, to an active matrix liquid crystal display device in which signal voltages having different polarities are applied between adjacent pixel electrodes.
  • Japanese Patent Laid-Open Publication No. Hei 6-281959 discloses that a switching element such as a thin film transistor (TFT) is provided for each pixel electrode in order to select a plurality of pixel electrodes.
  • TFT thin film transistor
  • An active matrix type liquid crystal display device is described.
  • FIG. 13 is a cross-sectional view of a matrix-type liquid crystal display device described in FIG. 2 (B) of Prior Art 1 described above.
  • the pixel electrodes 18 (a) and 18 (b) apply a high positive voltage or a low negative voltage to the pixel electrodes 18 (a) and 18 (b) with respect to the potential (reference potential) of the common electrode 31.
  • a display voltage By applying a display voltage, a vertical electric field 43 is generated, the alignment of the liquid crystal molecules 23 is controlled, and the image is displayed by controlling the light transmittance.
  • Japanese Patent Laid-Open Publication No. Hei 6-1188447 discloses a display voltage applied to a pixel electrode at a constant period such as one field in order to prevent deterioration of liquid crystal molecules.
  • a liquid crystal display device in which the polarity is inverted is described.
  • the prior art 2 also describes a line inversion driving method in which the polarity of the display voltage of the pixel electrode is inverted every horizontal scanning period (each row).
  • FIG. 14 is a plan view of a plurality of pixel electrodes for explaining the line inversion driving method.
  • the plurality of pixel electrodes 18 are arranged in a matrix along the X axis and the y axis.
  • the + symbol indicates that a display voltage of positive polarity is applied to the pixel electrode 18 with respect to the reference potential applied to the common electrode 31, and the symbol indicates that a display voltage of negative polarity is applied to the pixel electrode 18.
  • the polarities of the pixel electrodes 18 (a) and 18 (b) in adjacent rows are different, and the pixel electrodes in the same row (pixel electrodes in a line parallel to the X axis) have the same polarity.
  • a display voltage is applied.
  • the lateral electric field 42 between adjacent pixel electrodes with different polarities causes reverse tilt where the tilt angle 24 of the liquid crystal molecules 23 is different from the normal range. Domain 32 occurs.
  • an alignment film 21 is formed on the pixel electrode substrate 27, and an alignment process such as a rubbing process of rubbing with a cloth or the like is performed.
  • the liquid crystal molecules 23 are oriented at a specific angle (tilt angle 24) with respect to the main surface of the pixel electrode substrate 27 in the rubbing direction (the direction rubbed with a cloth or the like) without applying an electric field. To orient.
  • the reverse tilt domain since the force of the transverse electric field 42 is strong, the liquid crystal molecules having the property of an electric dipole are applied to the pixel electrode substrate 27 at a different angle (reverse tilt 25) from the other regions. In contrast, they will be oriented. Accordingly, the reverse tilt domain has a different optical property from other regions, and causes deterioration of image quality such as afterimages and uneven lighting.
  • the reverse tilt domain can be made inconspicuous by hiding it with a light-shielding film formed on the common electrode substrate 28 or the pixel electrode substrate 27.However, the aperture ratio of the pixel is reduced, and the brightness of the display device is reduced. This was the cause of the decline.
  • the object of the present invention is to reduce the reverse tilt domain, It is to eliminate image defects such as unevenness.
  • the above object is to form a non-electrode portion such as a slit-shaped opening in a common electrode corresponding to an adjacent pixel electrode in which a horizontal electric field becomes strong, and to center the non-electrode portion from the center between adjacent pixel electrodes. Can be achieved by shifting the reverse tilt domain to the side where the reverse tilt domain occurs.
  • FIG. 1 and 2 are a cross-sectional view and a plan view, respectively, of a liquid crystal display device for explaining the principle of the present invention. Since the same reference numerals are used as those in FIG. 13 described above, detailed description of the reference numerals is omitted.
  • FIG. 1 is a sectional view taken along the line AA of FIG.
  • a region where no electrode exists in the common electrode 31 (common electrode absence portion 33) is provided corresponding to the inter-electrode region of the adjacent pixel electrodes 18 (a) and 18 (b). ing.
  • the center 35 of the common electrode absence part 33 is provided so as to be shifted from the center 34 between the pixel electrodes on the side where the reverse tilt domain 32 is generated.
  • FIG. 3 is a cross-sectional view of the liquid crystal display device showing the state of the electric field of the liquid crystal display device employing the present invention.
  • the region where the equipotential lines 40 are inclined is narrower at the end of the pixel electrode 18 (b) on the side where the center 35 of the common electrode absence portion 33 is shifted.
  • the shape of the line of electric force 4 1 the inclination of the line of electric force at the end of the pixel electrode 18 (b) on the side shifted from the center 35 of the common electrode absence part 3 3 3 It can be understood that the component of the lateral electric field 42 is weakened.
  • the lateral electric field component 42 at the end of the pixel electrode 18 (b) where the reverse tilt domain 32 is generated can be weakened, the range in which the reverse tilt domain occurs can be reduced. Can be.
  • the lateral electric field component 42 at the end of the pixel electrode 18 (a) away from the center 35 of the common electrode absent part 33 becomes stronger, but the end of the pixel electrode 18 (a) has no reverse tilt domain. , There is no problem.
  • the reason why the reverse tilt domain does not occur at the end of the pixel electrode 18 (a) shown in FIG. 3 is that at the end on the pixel electrode 18 (a) side, the horizontal electric field 42 causes the liquid crystal molecules 23 to move to the original tilt angle 24 direction. This is because it functions to orient the crystal.
  • FIG. 4 is a graph comparing the light blocking ability in the vicinity of a region between pixel electrodes between a liquid crystal display device to which the present invention is applied and a conventional liquid crystal display device having no common electrode absent portion.
  • the horizontal axis is the position with the center 34 between the pixel electrodes as the zero point.
  • the unit is zm, and the vertical axis is the light transmittance.
  • 45 is the transmittance curve of the present invention
  • 46 is the transmittance curve of the conventional liquid crystal display device.
  • the light-exiting region 32b of the liquid crystal display device of the present invention is closer to the center 34 between the pixel electrodes than the conventional light-exiting region 32a.
  • the region through which the light passes corresponds to the reverse tilt domain.
  • a region where light transmission cannot be controlled by the pixel electrode can be confined in a narrow region near the center 34 between the pixel electrodes, and as shown in FIG. 1 and FIG.
  • the area shielded by the first light shield 2 or the second light shield 29 can be reduced, and the aperture ratio of the pixel portion can be improved.
  • the data shown in Fig. 4 shows that the pixel electrode interval is 1.8 zm, the width of the slit in the common electrode absence part 33 is 3.0 // m, and the slit in the common electrode absence part 33 is Center 35 1.35 yamTFT substrate
  • the figure shows a case where they are arranged shifted in the rubbing direction.
  • the reverse tilt domain can be brought closer to the center 34 between the pixel electrodes by about 1 m than the conventional one.
  • the opening can be made as wide as about 1 m, a reverse tilt domain does not occur in the lighting region, and the electrode absence portion 33 is not in the lighting region, so that a uniform image display can be obtained.
  • FIGS. 6 (A) to 6 (E) are plan views of a pixel portion of a liquid crystal display device for explaining a direction in which a reverse tilt domain occurs.
  • FIGS. 6 (A) to 6 (E) show the alignment film 21 of the pixel electrode substrate 27 when different polarities are applied between the pixel electrodes 18 (a) and 18 (b).
  • the relationship between the rubbing direction 26 and the rubbing direction 36 of the alignment film 22 of the common electrode substrate 28 indicates the direction in which the reverse tilt domain emerges.
  • . 6A to 6E show plan views when viewed from above the common electrode substrate 28.
  • the pixel electrode substrate 27 rubs rightward (in the direction of the arrow 26) along the center line 34 between the pixel electrodes, and the common electrode substrate 28 is the pixel electrode substrate.
  • 9 shows a case where rubbing is performed 90 degrees counterclockwise with respect to the rubbing direction 26 of the pixel electrode substrate, and the right side of the rubbing direction 26 of the pixel electrode substrate with respect to the center line 34 between the pixel electrodes.
  • a reverse tilt domain is generated at the end of the pixel electrode 18 (b).
  • the pixel electrode substrate 27 is rubbed 45 degrees clockwise (in the direction of the arrow 26) with respect to the center line 34 between the pixel electrodes, and the common electrode substrate 27 is rubbed. Indicates the case where the rubbing is performed 90 degrees counterclockwise 36 with respect to the rubbing direction 26 of the pixel electrode substrate.
  • a reverse tilt domain is generated at the end of the pixel electrode 18 (b) in the rubbing direction 26 of the pixel electrode substrate with respect to the line 34.
  • the pixel electrode substrate 27 is rubbed 90 degrees clockwise (in the direction of arrow 26) with respect to the center line 34 between the pixel electrodes, and the common electrode substrate 28 is rubbed. Shows the case where the rubbing is performed 90 degrees counterclockwise 36 with respect to the rubbing direction 26 of the pixel electrode substrate, and the rubbing direction 26 of the pixel electrode substrate with respect to the center line 34 between the pixel electrodes.
  • a reverse tilt domain is generated at the end of the pixel electrode 18 (b).
  • the pixel electrode substrate 27 rubs clockwise (in the direction of arrow 26) by 135 degrees with respect to the center line 34 between the pixel electrodes, and the common electrode substrate 28 Shows the case where rubbing is performed 90 degrees counterclockwise with respect to the rubbing direction 26 of the pixel electrode substrate 36, and the rubbing direction of the pixel electrode substrate with respect to the center line 34 between the pixel electrodes.
  • Reverse tilt domains are generated at the ends of the 26 pixel electrodes 18 (b).
  • the pixel electrode substrate 27 is 180 degrees clockwise (in the direction of arrow 26) with respect to the rubbing direction of the pixel electrode substrate in the example shown in FIG. 6 (A).
  • the rubbing is performed in the direction of 90 ° counterclockwise with respect to the rubbing direction 26 of the pixel electrode substrate, and the common electrode substrate 28 is rubbed in the counterclockwise direction 36.
  • a reverse tilt domain occurs at the end of the pixel electrode 18 (a) on the right side of the pixel electrode substrate in the rubbing direction 26 with respect to 4.
  • the direction 38 in which the reverse tilt domain is likely to occur is oriented in the direction of the center line 34 between the pixel electrodes. It seems that the reverse tilt domain hardly occurs on both sides of the electrodes 18 (a) and 18 (b), but the rubbing direction 26 of the pixel electrode substrate faces the direction of the pixel electrode 18 (b). Therefore, a reverse tilt domain is generated in the pixel electrode 18 (b).
  • the rubbing direction 26 of the pixel electrode substrate is opposite to the rubbing direction 36 of the common electrode substrate. This is due to the spiral structure that rotates toward. That is, the direction 44 of the liquid crystal molecules at a position slightly above the pixel electrode substrate 27 is in a direction close to the rubbing direction 26 of the pixel electrode substrate, and is directed to the pixel electrode on the rubbing direction 26 side of the pixel electrode substrate. Reverse tilt domains are more likely to occur.
  • the reverse tilt domain can be brought closer to the pixel electrode center 34 by shifting the center of the common electrode absence part 33 in the rubbing direction 26 of the pixel electrode substrate.
  • the rubbing direction on the pixel electrode substrate 27 and the common electrode substrate 28 side can be specified by examining the tilt angle of the liquid crystal layer in contact with the lower alignment film 21 and the upper alignment film 22. That is, the direction in which the liquid crystal molecules have a tilt angle with respect to each substrate is the direction in which the rubbing process is performed.
  • a definitive method for measuring tilt angle is the crystal mouth-tissue method.
  • the reverse tilt domain can be further reduced by using a spontaneous helical pitch of the liquid crystal layer that is 6 to 10 times the thickness of the liquid crystal layer, which is shorter than before.
  • Twisted nematic liquid crystal has a pixel electrode base as described in Fig. 6.
  • the liquid crystal molecules 23 have a helical structure in which the orientation direction 44 of the liquid crystal molecules 23 rotates in a specific direction as the height from the plate 27 increases.
  • the spiral structure of twisted nematic liquid crystal can also be formed by the rubbing directions 26, 36 of the pixel electrode substrate 27 and the common electrode substrate 28, but the liquid crystal layer is spontaneously formed by liquid crystal molecules 23 called a chiral agent. It can be formed by adding a substance that gives rotational force.
  • the alignment direction of liquid crystal molecules 23 at a specific height from the pixel electrode substrate 27 is determined by the spontaneous rotational force of the liquid crystal molecules. This is the same as the orientation direction of the liquid crystal molecules 23 near 27.
  • the height of the liquid crystal molecules 23 from the pixel electrode substrate 27 at this time is the spontaneous spiral pitch.
  • the spontaneous spiral pitch of the liquid crystal layer was 12 times the thickness of the liquid crystal layer in order to lower the driving voltage of the liquid crystal display panel. 15 to 15 times longer.
  • FIG. 5 is a graph showing the relationship between the spontaneous spiral pitch and the width of the reverse tilt domain.
  • the horizontal axis in Fig. 5 is the length of the spontaneous spiral pitch.
  • the unit is z m.
  • the vertical axis is the distance from the edge of the pixel electrode 18 in the J-B tilt domain to the boundary between the reverse tilt domain and the normal display area (discrimination line), that is, the width of the reverse tilt domain. It is.
  • the unit is ⁇ m.
  • the thickness of the liquid crystal layer of the liquid crystal display device whose reverse tilt domain was measured was 3 m1.
  • the width of the reverse tilt domain can be reduced by reducing the spontaneous spiral pitch.
  • the spontaneous spiral pitch of the liquid crystal layer is shorter than that of the conventional liquid crystal layer.
  • the width of the reverse tilt domain was reduced by making it 10 times or less the thickness of the crystal layer.
  • the spontaneous spiral pitch is too small, it becomes difficult to control the orientation of the liquid crystal molecules 23 by the pixel electrode 18, so that the spontaneous spiral pitch of the liquid crystal layer is 6 to 1 times the thickness of the liquid crystal layer. A factor of 0 is optimal.
  • Japanese Patent Laid-Open Publication Nos. Hei 6-281959 and Hei 6-118447 describe that a slit is formed in a common electrode on a drain line of a thin film transistor. Since there is no idea to eliminate the reverse tilt domain at the electrode end, the configuration of the present invention in which the center of the portion where the common electrode electrode is absent is shifted from the center between adjacent pixel electrodes to the side where the reverse tilt domain occurs. was not described at all. Further, the above prior art did not describe a liquid crystal display device in which the spontaneous spiral pitch was increased from 6 times to 10 times the thickness of the liquid crystal layer.
  • FIG. 1 is a sectional view of a liquid crystal display device for explaining a basic configuration of the present invention.
  • FIG. 2 is a plan view of a pixel portion of a liquid crystal display device for explaining a basic configuration of the present invention.
  • FIG. 3 shows a state of an electric field of a liquid crystal display device employing the present invention. It is sectional drawing of a crystal display device.
  • FIG. 4 is a graph showing a comparison between the liquid crystal display device to which the present invention is applied and the conventional liquid crystal display device in terms of light blocking ability near the region between pixel electrodes.
  • FIG. 5 is a graph showing the relationship between the spontaneous spiral pitch and the width of the reverse tilt domain.
  • FIG. 6 (A) to 6 (E) are plan views of a pixel portion of a liquid crystal display device for explaining a direction in which a reverse tilt domain occurs.
  • FIG. 7 is a plan view of a pixel portion of the liquid crystal display device according to the first embodiment of the present invention.
  • FIG. 8 is a cross-sectional view of a pixel portion of the liquid crystal display device according to the first embodiment of the present invention.
  • FIG. 9 is a plan view of a display section of a liquid crystal display device showing the polarity of each pixel electrode in Embodiment 2 of the present invention.
  • FIG. 10 is a plan view of a pixel portion of a liquid crystal display device according to Embodiment 2 of the present invention.
  • FIG. 11 is a plan view of a display section of a liquid crystal display device showing the polarity of each pixel electrode in Embodiment 3 of the present invention.
  • FIG. 2 is a plan view of a pixel portion of a liquid crystal display device according to Embodiment 3 of the present invention.
  • FIG. 13 is a cross-sectional view showing a pixel portion of a conventional liquid crystal display device.
  • FIG. 14 is a plan view of a display section showing the polarity of each pixel electrode of the liquid crystal display device performing the line inversion drive.
  • FIG. 7 is a plan view of a liquid crystal display device according to an embodiment of the present invention
  • FIG. 8 is a cross-sectional view taken along line aa and line bb of FIG.
  • FIG. 7 is a plan view of the common electrode substrate 28 as viewed from above.
  • the present embodiment is directed to the display device described in the liquid of the line inversion driving method described above with reference to FIG. 14, and the pixel electrode 18 (a) of one row and the pixel of the adjacent row are used.
  • a slit-shaped electrode absent portion 33 is provided in the direction parallel to the scanning signal line (gate signal line) 8 in the direction 1, and the center of the electrode absent portion 33 is set to the center 3 between pixel electrodes parallel to the scanning signal line 8. 4 is shifted in the rubbing direction 26 on the side where the reverse tilt domain occurs, that is, on the pixel electrode substrate side.
  • the slit-shaped electrode-free portion 33 is located in the pattern of the light shields 4 and 9 or
  • a light shielding metal layer such as a capacitor electrode 4 formed on a thin film transistor substrate (pixel electrode substrate) 27.
  • the distribution of the equipotential lines 40 changes as described in FIG. 3, and as a result, FIG. As described above, the region of the reverse tilt 25 can be closer to the center 34 between the pixel electrodes than the conventional case.
  • the area where the reverse tilt domain 32 is hidden by the light shields 4 and 9 can be narrowed, so that the opening can be widened and a bright image display can be obtained.
  • Reference numeral 27 in FIG. 8 denotes a pixel electrode substrate (TFT substrate, first substrate) made of a transparent insulator such as quartz glass or glass having a softening point of 1000 ° C. or less.
  • 1 is a base film (first insulating film), S i 0 2, S i N, a transparent insulating film such as Ta 2 0 5, AL 2 0 3, an alkali component contained in the pixel electrode substrate is a liquid Akirachu (4) Provided to prevent leakage into the semiconductor layer of the thin film transistor.
  • Reference numeral 2 denotes a first light-shielding film (backside light-shielding layer, TFT substrate light-shielding film), which comprises a light-shielding metal layer such as Cr, Al, Ta, and Mo, and a light-shielding insulating layer obtained by adding a dye or pigment to an insulating film.
  • the semiconductor layer in the TFT channel is shielded from light to prevent TFT malfunction.
  • 3 is a second insulating film, S i 0 2, S i N, with Ta 2 0 5, AL 2 0 3 transparent insulating film such as is provided with a TFT substrate light-shielding film 2 and the TFT for insulation .
  • Reference numeral 4 denotes a first capacitor electrode (capacitor forming layer), which is formed of a metal layer such as Cr, A1, Ta, and Mo, and is one of the components of a storage capacitor 20 that holds the potential of the pixel electrode 18.
  • the first capacitor electrode 4 also functions as a light-shielding film (second light-shielding film) of the TFT substrate 27, and also has a function of shielding the reverse tilt domain 32 and the common electrode absent portion 33 from light.
  • Reference numeral 6 denotes a semiconductor layer, which functions as a channel layer of the TFT 19 and one electrode (second capacitor electrode) of the storage capacitor 20.
  • a material of the semiconductor layer 6 there can be used a polysilicon formed by a low pressure CVD method, a polysilicon formed by irradiating an amorphous silicon film with a laser beam, or an amorphous silicon film formed by a plasma CVD method.
  • Reference numeral 7 denotes a gate insulating film (fourth insulating film) made of SiO 2 , Si N, and the like, and functions as a dielectric of the storage capacitor 20 in addition to the gate insulating film of the TFT 19.
  • 8 is a gate electrode layer, such as a polysilicon or metal layer.
  • a gate electrode of TFT 19 a gate wiring (scanning signal line), and the other electrode of the storage capacitor 20 (third capacitor electrode).
  • Reference numeral 9 denotes a source / drain electrode layer, which is made of a metal layer such as Cr, A1, Ta, Mo, etc., and has a source electrode, a drain electrode, a video signal line (drain wiring), and a storage capacitor 20 of TFT 19.
  • One electrode (the fourth capacitance electrode) is formed.
  • the side connected to 8 will be referred to as the source electrode.
  • the S i 0 2, S i N consists T a 2 0 5, AL 2 0 3 or the like transparent insulating film, the gate wiring 8 and the drain line 9 Acts as a dielectric for insulation and storage capacitance 20.
  • 1 1 is an interlayer insulating film (the sixth insulating film), S i 0 2, S i N, consists T a 2 0 5, AL 2 0 3 or the like transparent insulating film, wiring layers 1 to be described later 2 and the drain electrode 9 and the gate wiring 8 are insulated.
  • Reference numeral 12 denotes a wiring layer, which is formed of a conductive film such as Cr, AI, Ta, Mo, molybdenum silicide, and tungsten silicide, and electrically connects the source electrode 9 and the pixel electrode 18.
  • the wiring layer 12 also functions as a light-shielding film (third light-shielding film) that shields the gap between the storage capacitor electrodes 4 and 9 and the gate wiring 8.
  • Reference numeral 13 denotes an interlayer insulating film (seventh insulating film), which is made of SiO 2 , and insulates the pixel electrode 18 (a) of an adjacent pixel from the wiring layer 12.
  • Reference numeral 14 also denotes an interlayer insulating film (eighth insulating film) made of SiN, and insulates the pixel electrode 18 (a) of the adjacent pixel from the wiring layer 12.
  • Reference numeral 15 denotes a flattening film (a ninth insulating film), which is a transparent insulating resin such as polyimide-epoxy, a photosensitive transparent organic film such as a photoresist, or a relatively thick Si 0 2
  • the pixel electrode 18 is made of a transparent inorganic insulating film such as a film or a sine film, and the surface on which the pixel electrode 18 is formed is made flat so that the electric field generated by the pixel electrode 18 becomes a uniform vertical electric field.
  • 18 is the pixel electrode, I TO (indium tin It is made of a transparent conductive film such as oxide), and controls the alignment direction by applying an electric field to the liquid crystal molecules 23 to change the light transmittance of the liquid crystal layer to display an image.
  • 18 (b) shows one pixel electrode
  • 18 (a) shows a pixel electrode adjacent in the vertical direction (y direction, column direction).
  • Reference numeral 17 denotes a contact hole formed in each insulating film to connect between the electrodes.
  • 17 (A) denotes the drain electrode 9 and the semiconductor layer 6, and 17 (D) denotes the source electrode 9 and the semiconductor layer 6, 1.
  • 7 (B) is a contact hole connecting the source electrode 9 and the wiring layer 12
  • 17 (C) is a contact hole connecting the wiring layer 12 and the pixel electrode 18.
  • Reference numeral 21 denotes an alignment film (lower alignment film, first alignment film) provided on the TFT substrate 27, which is made of an organic film such as polyimide.
  • the lower alignment film 21 is rubbed in the direction indicated by reference numeral 26 in FIG.
  • Reference numeral 23 schematically depicts the state of the liquid crystal molecules.
  • 24 is a tilt angle generated by the rubbing process 26 of the TFT substrate.
  • Reference numeral 25 denotes a reverse tilt generated by a horizontal electric field between the adjacent pixel electrodes 18 (a) and 18 (b).
  • Reference numeral 32 denotes an area where reverse tilt occurs, that is, a reverse tilt domain.
  • 34 is a center line between adjacent pixel electrodes.
  • Reference numeral 28 denotes a common electrode substrate (opposite substrate, second substrate) made of a transparent insulator such as glass or plastic.
  • insulating film 8 insulating film
  • a transparent insulating film such as AL 2 0 3
  • line insulation of the common electrode 31 and the black matrix It functions to prevent dyes, pigments, carbon, etc. in black matrix from entering the liquid crystal layer.
  • Reference numeral 31 denotes a common electrode (opposite electrode), which functions as a transparent conductive film such as an ITO and generates a vertical electric field in the liquid crystal layer together with the pixel electrode 18.
  • Reference numeral 22 denotes an alignment film (upper alignment film, second alignment film) provided on the common electrode substrate 28, which is made of an organic film such as polyimide. The upper alignment film 22 is rubbed in the direction indicated by reference numeral 36 in FIG.
  • Reference numeral 33 denotes an electrode absent portion provided on the common electrode 31.
  • Reference numeral 35 denotes the center line of the common electrode absence part.
  • the common electrode 31 is electrically connected in some places by a common electrode connection part 37 so as not to be electrically disconnected by the electrode absence part 33. In the common electrode connection part 37, the effect of narrowing the width of the reverse tilt domain is small, but in this embodiment, since the common electrode connection part 37 is provided on each drain line 9, the reverse tilt domain is The problem of light leakage does not occur because it is hidden by 9.
  • the planar structure of this embodiment includes a plurality of scanning signal lines 8 extending in the horizontal direction (X direction, row direction) and a plurality of scanning signal lines 8 extending in the vertical direction (y direction, column direction).
  • An active matrix configuration is provided in which a pixel including a thin film transistor 19 and a pixel electrode 18 is provided corresponding to a portion where the video signal line 9 intersects.
  • capacitance lines 4 and 8 extending in the same direction as the scanning signal line 8.
  • the capacitor lines 4 and 8 form a storage capacitor 20 together with the pixel electrode 18 and the source electrode 9 and serve to hold the display voltage applied to the pixel electrode 18 for a certain period.
  • the vertical structure of the storage capacitor 20 is as follows: the first capacitance electrode (capacitance line) 4, the third insulation film 5, the second capacitance electrode (semiconductor layer) 6, the fourth insulation film (gate insulation). It has a multilayer structure consisting of a film 7, a third capacitor electrode (capacitance line) 8, a fifth insulating film (interlayer insulating film) 10, and a fourth capacitor electrode (source electrode) 9.
  • the first capacitance electrode 3 and the third capacitance electrode 8 are connected to the capacitance line, and the second capacitance electrode 6 and the fourth capacitance electrode 9 are connected to the pixel electrode 18 so that the pixel electrode 18 and the capacitance line 4 are connected.
  • a multilayer capacitive element is formed therebetween.
  • each storage capacitor electrode 4, 6, 8, and 9 can be reduced, and the aperture ratio of the pixel can be improved. Can be done.
  • a liquid crystal display device used in liquid crystal projectors and the like, in which the diagonal length of the display area is 5.08 cm or less (2 inches or less), the size of the pixel electrode becomes extremely small, so the storage capacitance is reduced.
  • the use of a multi-layer structure is extremely effective for obtaining a bright image display.
  • a liquid crystal display device with a diagonal display area of 27.94 cm or less (11-inch or less) used in small notebooks and personal computers has a pixel count of 102 4 X
  • a high-definition low-temperature polysilicon TFT liquid crystal display device with a specification of 3 X 768 or more (XGA or more) the size of the pixel electrode becomes extremely small. Is particularly effective for increasing the number of pixels of the liquid crystal display device and increasing the definition.
  • the storage capacitor 20 is moved near the scanning signal line 8 in order to hide the reverse tilt domain.
  • the rubbing direction 26 on the TFT substrate side is directed 45 degrees to the lower left with respect to the center line of the scanning signal line 8. Therefore, as shown in FIG. 6 (D), a reverse tilt domain 32 is generated at the end of the pixel electrode 18 (b) below the center 34 between the pixel electrodes. Therefore, by providing the storage capacitance element 20 at the end of the pixel electrode 18 (a) near the lower side of the scanning signal line 8, the capacitance electrodes 4 and 9 function as a light shielding film and the reverse tilt domain 3 2 The problem of light leakage does not occur.
  • the elongated slit-shaped electrode-free portion 33 provided on the common electrode 31 along the scanning signal line 8 is located below the pixel electrode center 34, that is, the rubbing direction on the TFT substrate side. Since the reverse tilt domain 3 2 can be made smaller, the reverse tilt domain 3 Since 2 can be confined in the region where the capacitor electrodes 4 and 9 are provided, it is not necessary to increase the area of the capacitor electrodes 4 and 9 more than necessary, and the aperture ratio is further improved.
  • the electrode absent portion 33 is provided in the region where the capacitor electrode 4 exists, the electrode absent portion 33 is not conspicuous and the display image quality is not degraded.
  • the gap between the capacitance electrodes 4 and 9, the scanning signal line 8, and the TFT substrate light-shielding film 2 is shielded by the wiring layer 12 made of the light-shielding metal layer, so that light leakage occurs between them.
  • the contrast is improved without any.
  • the reverse tilt domain 32 and the pixel electrode absent portion 33 are also shielded from light by the wiring layer 12.
  • the rubbing direction 26 on the TFT substrate side is provided 45 degrees to the lower left with respect to the center line of the scanning signal line 8, and
  • the rubbing direction 36 on the electrode substrate side is provided 45 degrees to the lower right, so as shown in Fig. 6 (D).
  • the width of the reverse tilt domain is minimized, and the aperture ratio is further improved.
  • a reverse tilt domain is likely to be generated between the pixel electrodes 18 adjacent in the row direction (the X direction and the horizontal direction). Since the line inversion driving method described with reference to FIG. 14 is used, the pixel electrodes 18 adjacent in the row direction have the same polarity, so the horizontal electric field component generated between the pixel electrodes 18 adjacent in the row direction. Is weak, and no reverse tilt domain occurs at the end of the pixel electrode 18 in the row direction.
  • the semiconductor layer 6 in the channel portion of the TFT is shielded from light by the drain signal line 9, so that the TF T does not malfunction due to external light.
  • a storage capacitor type liquid crystal display device having a configuration in which the scanning signal line 8 and the capacitor lines 4 and 8 are provided separately is described as an example, but the present invention is directed to a storage capacitor type liquid crystal display device.
  • the present invention is not limited to the display device, and can be applied to an additional capacitance type liquid crystal display device in which the scanning signal lines 8 of adjacent pixels and the capacitance lines 4 and 8 are integrally formed.
  • the additional capacitance type liquid crystal display device since the scanning signal line 8 of the adjacent pixel is also used as the capacitance lines 4 and 8, the aperture ratio of the pixel can be further improved.
  • the additional capacitance type liquid crystal display device has a disadvantage that the load of a driver for driving the scanning signal line 8 becomes heavy because the storage capacitor 20 is connected to the scanning signal line 8, and the scanning signal line 8 can be operated at high speed.
  • the storage capacitor type is more advantageous for a high-definition liquid crystal display device that needs to be driven and has a large number of scanning lines.
  • the noise component jumping into the pixel electrode 18 from the video signal line 9 via the parasitic capacitance is canceled by the polarity inversion of the video signal.
  • a uniform image display can be obtained between pixels in different columns.
  • the spontaneous spiral pitch of the liquid crystal layer is about 20 ⁇ m, which is 6 to 10 times the thickness of the liquid crystal layer.
  • the width of the reverse tilt domain can be reduced by about 0.8 ⁇ 10 as compared with the case of using about 60 ⁇ m, which is equivalent to about 15 times.
  • the contact hole 17 (C) for connecting the pixel electrode 18 to the wiring 12 is provided apart from the edge of the pixel electrode 18, so that the contact hole The transverse electric field near 17 (C) is weakened, and the reverse tilt domain that occurs near the contact hole 17 (C) can be reduced. More specifically, as shown in Fig. 8, The cross-sectional shape of the pixel electrode 18 on the contact hole 17 (C) formed in the film 15 is not flat but deeper than other portions. Therefore, the liquid crystal molecules on the contact hole 17 (C) are far from the common electrode 31 and are susceptible to the lateral electric field, and are liable to cause reverse tilt as shown at 23a.
  • a column-by-column inversion drive type liquid crystal in which the polarity of the pixel electrodes 18 (a) and 18 (b) is inverted for each column to drive the liquid crystal display device. It is an embodiment when the present invention is applied to a display device.
  • FIG. 10 is a plan view of a pixel portion of a liquid crystal display device according to Embodiment 2 of the present invention.
  • the reference numerals are the same as those in FIG. 7 described in the first embodiment.
  • the present embodiment is characterized in that the electrode absent portion 33 provided on the common electrode 31 is provided in a slit shape along the video signal line 9.
  • the rubbing direction 26 on the TFT substrate side is directed to the lower right direction by 45 degrees with respect to the center line of the scanning signal line 8
  • the rubbing direction 36 on the common electrode substrate side is directed to the upper right direction by 45 degrees. I have. Accordingly, FIG. 6 (D) is rotated counterclockwise by 90 degrees, and a reverse tilt domain 32 is generated at the end of the pixel electrode 18 (b) on the right side with respect to the center 34 between the pixel electrodes.
  • the center 35 of the common electrode absence part is shifted to the side where the reverse tilt domain occurs, that is, to the right side, from the center 34 between the pixel electrodes.
  • the reverse tilt domain is moved toward the pixel electrode center 34 side.
  • the reverse tilt domain is shielded from light by the black matrix 29 provided on the common electrode substrate 28.
  • the area to be shielded by the black matrix 29 can be reduced, so that the aperture ratio is improved.
  • the black matrix 29 shields the common electrode absent portion 33 from light, so that the common electrode absent portion 33 is inconspicuous and the display quality is improved.
  • the capacitor 20 may be provided along the video signal line 9, and the reverse tilt domain generated along the video signal line 9 may be shielded by the capacitor 20.
  • the connecting portion 37 electrically connecting the common electrode 31 is provided on the scanning signal line 8. Is provided.
  • the noise component jumping into the pixel electrode 18 from the scanning signal line 8 via the parasitic capacitance is offset by the polarity inversion of the pixel electrode 18. Therefore, uniform image display can be obtained between pixels in different rows.
  • the spontaneous spiral pitch of the liquid crystal layer is about 20 2m, which is 6 to 10 times the thickness of the liquid crystal layer.
  • the width of the reverse tilt domain can be reduced by about 0.1 as compared with the case of using about 60 / zm which is twice to 15 times.
  • the contact hole 17 (C) for connecting the pixel electrode 18 to the wiring 12 is provided away from the edge of the pixel electrode 18, so that the contact hole 11 (C) is provided.
  • the transverse electric field near (C) is weakened, and the reverse tilt domain generated near contact hole 17 (C) can be reduced.
  • the polarity of the pixel electrodes 18 (a) and 18 (b) is inverted for each row, and the pixel electrodes 18 (b) and 18 (
  • FIG. 12 is a plan view of a pixel portion of a liquid crystal display device according to Embodiment 3 of the present invention.
  • the reference numerals are the same as those in FIG. 7 described in the first embodiment.
  • the common electrode 31 is provided with a slit-shaped electrode absent portion 33 (a) along the scanning signal line 8 and a video signal line 9 with a slit-shaped electrode absent portion 33 (b).
  • the feature is that it is provided.
  • the rubbing direction 26 on the TFT substrate side is directed to the lower right direction (direction in which the light shielding film 4 is provided) by 45 degrees with respect to the center line of the scanning signal line 8, and the rubbing direction 36 on the common electrode substrate side. Is directed to the upper right direction by 45 degrees (the direction in which the light shielding film 4 is not provided with respect to the center line of the scanning signal line 8). Accordingly, the center 34 between the pixel electrodes adjacent in the column direction has the same shape as that shown in FIG. 6 (B), and the reverse tilt is applied to the end of the pixel electrode 18 (b) below the center 34 between the pixel electrodes. Domain 32 occurs.
  • the capacitive element 20 is provided on the scanning signal line 8 on the side where the reverse tilt domain occurs, and the reverse tilt domain is shielded from light.
  • the center 34 4 ′ between the pixel electrodes adjacent in the row direction has the same shape as that of FIG. 6D rotated 90 degrees counterclockwise.
  • a reverse tilt domain 32 is generated at the end of the pixel electrode 18 (b) on the right side with respect to 4 ′. Therefore, in the present embodiment, the center 35 'of the common electrode absence part extending in the column direction is shifted to the side where the reverse tilt domain occurs, that is, to the right side, from the center 34' between the pixel electrodes, so that the reverse tilt domain is shifted. It is close to the pixel electrode center 34, side.
  • the reverse tilt domain generated at the end of the pixel electrode 18 (b) along the video signal line 9 is shielded from light by a black matrix 29 extending along the video signal line 9.
  • the capacitor 20 may be provided along the video signal line 9, and the reverse tilt domain generated along the video signal line 9 may be shielded by the capacitor 20.
  • the area for shielding the reverse tilt domain with the capacitive element 20 and the black matrix 29 can be reduced, and the aperture ratio is improved.
  • the common electrode non-existing portions 3 3 (a) and 33 (b) are shielded from light by the capacitive element 20 and the black matrix 29, the common electrode non-existing portions are inconspicuous, and the display image quality is reduced. Is improved.
  • the slits 33 (a) and 33 (b) are provided along the scanning signal line 8 and the video signal line 9 on the common electrode 31.
  • a connection portion 37 for electrically connecting the electrodes 31 is provided on the scanning signal line 8 and the video signal line.
  • the width of the reverse tilt domain generated along the video signal line 9 is the smallest, so that the area shielded by the black matrix 29 is smaller.
  • the aperture ratio is improved, and the brightest image display is obtained.
  • the width of the reverse tilt domain generated along the scanning signal line 8 is not minimum, but generally, the interval between the video signal lines 9 is narrower than the interval between the scanning signal lines 8. (For example, in the case of color pixels, R, G, and B pixels are arranged in the row direction to make one pixel.) Therefore, it is better to minimize the width of the reverse tilt domain generated along the video signal line 9.
  • the definition of the liquid crystal display device can be increased.
  • the noise component that jumps from the video signal line 9 to the pixel electrode 18 through the parasitic capacitance of the video signal line 9 and the pixel electrode 18 is: The signal is canceled by the reversal of the polarity of the video signal.
  • the noise component that jumps into the pixel electrode 18 from 8 is canceled by the polarity inversion of the pixel electrode 18, so that a uniform image display can be obtained between pixels in different rows and columns, and the most uniform display image can be obtained. Are better.
  • the first embodiment described above does not generate a reverse chinoreto domain along the video signal line 9, so that the video signal line 9 This is advantageous because the distance between the two can be minimized.
  • the spontaneous spiral pitch of the liquid crystal layer is about 20 2m, which is 6 to 10 times the thickness of the liquid crystal layer. Use of about 60 m, which is double to 15 times Compared with the case, the width of the reverse tilt domain can be reduced by about 0.1.
  • the contact hole 17 (C) for connecting the pixel electrode 18 to the wiring 12 is provided away from the edge of the pixel electrode 18, so that the contact The transverse electric field near the contact hole 17 (C) is weakened, and the reverse tilt domain generated near the contact hole 17 (C) can be reduced.
  • the present invention reduces the width of a reverse tilt domain generated at the edge of a pixel electrode of a liquid crystal display device, prevents light leakage, improves display contrast, and reduces the light blocking width of the reverse tilt domain to increase the aperture ratio. It is possible to improve the brightness and obtain a display image, which is a practical possibility.

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Abstract

A liquid crystal display device which enables the reduction of the width of a reverse-tilt domain that causes image defect such as light leakage, and improvements of its display contrast and an aperture ratio. A common electrode non-existing part which corresponds to a spacing between one pixel electrode and a pixel electrode adjacent to it is formed in a common electrode which faces the pixel electrodes with a liquid crystal layer therebetween in the liquid crystal display device and the center of the common electrode non-existing part is shifted from the center of the spacing between the pixel electrodes in the rubbing direction of a pixel electrode substrate.

Description

明細書  Specification

液晶表示装置  Liquid crystal display

[技術分野]  [Technical field]

本発明は、 複数の画素電極が二次元的に配列された液晶表示装置に 関し、 特に、 隣接する画素電極間に極性の異なる信号電圧を印加する、 アクティブマトリックス型液晶表示装置に関する。  The present invention relates to a liquid crystal display device in which a plurality of pixel electrodes are two-dimensionally arranged, and more particularly, to an active matrix liquid crystal display device in which signal voltages having different polarities are applied between adjacent pixel electrodes.

[背景技術]  [Background technology]

日本国特許公開公報特開平 6 - 2 8 1 9 5 9号 (先行技術 1 ) には 、 複数の画素電極を選択するために、 各画素電極に薄膜トランジスタ ( T F T ) のようなスイッチング素子を設けた、 アクティブマトリックス 型液晶表示装置が記載されている。  Japanese Patent Laid-Open Publication No. Hei 6-281959 (prior art 1) discloses that a switching element such as a thin film transistor (TFT) is provided for each pixel electrode in order to select a plurality of pixel electrodes. An active matrix type liquid crystal display device is described.

第 1 3図は、 上記先行技術 1の第 2図 (B ) に記載されている、 マ トリックス型液晶表示装置の断面図を示したものである。  FIG. 13 is a cross-sectional view of a matrix-type liquid crystal display device described in FIG. 2 (B) of Prior Art 1 described above.

マトリックス型液晶表示装置では、 共通電極 3 1の電位 (基準電位 ) に対し、 各画素電極 1 8 ( a ) 、 1 8 ( b ) に、 高い正極性の電圧や 、 低い負極性の電圧等の表示電圧を与える事により、 縦電界 4 3を発生 させ、 液晶分子 2 3の配向を制御し、 光の透過率を制御することにより 、 画像表示を行っている。  In a matrix type liquid crystal display device, the pixel electrodes 18 (a) and 18 (b) apply a high positive voltage or a low negative voltage to the pixel electrodes 18 (a) and 18 (b) with respect to the potential (reference potential) of the common electrode 31. By applying a display voltage, a vertical electric field 43 is generated, the alignment of the liquid crystal molecules 23 is controlled, and the image is displayed by controlling the light transmittance.

しかし上記先行技術の液晶表示装置は、 第 1 3図に示すように、 隣 接する画素電極 1 8 ( a ) 、 1 8 ( b ) に異なる表示電圧が供給される と、 画素電極間領域 3 9に横電界 4 2が発生する。  However, as shown in FIG. 13, when a different display voltage is supplied to the adjacent pixel electrodes 18 (a) and 18 (b), as shown in FIG. Then, a horizontal electric field 42 is generated.

日本国特許公開公報特開平 6 - 1 1 8 4 4 7号 (先行技術 2 ) には 、 液晶分子の劣化を防止するために、 1フィールド等、 一定の周期で画 素電極に印加する表示電圧の極性を反転している液晶表示装置が記載さ れている。 上記先行技術 2には、 1水平走査期間毎に (1行毎に) 画素 電極の表示電圧の極性を反転するライン反転駆動方式の記載もある。 第 1 4図は、 ライン反転駆動方式を説明するための、 複数の画素電 極の平面図である。 複数の画素電極 1 8は X軸、 y軸に沿ってマトリッ クス状に配列されている。 +記号は共通電極 3 1に印加される基準電位 に対し、 正極性の表示電圧が画素電極 1 8に印加されることを示し、 一 記号は負極性の表示電圧が画素電極 1 8に印加されることを示す。 ライ ン反転駆動方式では、 隣接する行の画素電極 1 8 ( a ) 、 1 8 ( b ) 間 では極性が異なり、 同じ行の画素電極(X軸に平行なラインの画素電極 ) は同じ極性の表示電圧が印加される。 Japanese Patent Laid-Open Publication No. Hei 6-1188447 (prior art 2) discloses a display voltage applied to a pixel electrode at a constant period such as one field in order to prevent deterioration of liquid crystal molecules. A liquid crystal display device in which the polarity is inverted is described. The prior art 2 also describes a line inversion driving method in which the polarity of the display voltage of the pixel electrode is inverted every horizontal scanning period (each row). FIG. 14 is a plan view of a plurality of pixel electrodes for explaining the line inversion driving method. The plurality of pixel electrodes 18 are arranged in a matrix along the X axis and the y axis. The + symbol indicates that a display voltage of positive polarity is applied to the pixel electrode 18 with respect to the reference potential applied to the common electrode 31, and the symbol indicates that a display voltage of negative polarity is applied to the pixel electrode 18. Indicates that In the line inversion driving method, the polarities of the pixel electrodes 18 (a) and 18 (b) in adjacent rows are different, and the pixel electrodes in the same row (pixel electrodes in a line parallel to the X axis) have the same polarity. A display voltage is applied.

ライン反転駆動方式を例にすると、 第 1 3図の様に極性が異なる隣 接した画素電極間の横電界 4 2により、 液晶分子 2 3のチルト角 2 4が 通常と異なる領域であるリバースチルトドメイン 3 2が発生する。 液晶 表示装置では、 液晶分子 2 3の配向を制御するために、 画素電極基板 2 7上に配向膜 2 1を形成し、 布等で擦るラビング処理等、 配向処理を行 つている。 ラビング処理を行うと、 電界を印加しない状態で、 ラビング 方向 (布等で擦った方向) 3 6に液晶分子 2 3が画素電極基板 2 7の主 面に対し特定の角度 (チルト角 2 4 ) をもって配向する。 それに対し、 リバースチルトドメインでは、 横電界 4 2の力が強いために、 電気双極 子の性質を持つ液晶分子は、 他の領域とは異なる角度(リバースチルト 2 5 ) で画素電極基板 2 7に対し配向することになる。 従ってリバース チルトドメインは、 他の領域と光学的性質が異なるために、 残像、 点灯 不均一等画質を悪化させる原因になる。  Taking the line inversion drive method as an example, as shown in Fig. 13, the lateral electric field 42 between adjacent pixel electrodes with different polarities causes reverse tilt where the tilt angle 24 of the liquid crystal molecules 23 is different from the normal range. Domain 32 occurs. In the liquid crystal display device, in order to control the alignment of the liquid crystal molecules 23, an alignment film 21 is formed on the pixel electrode substrate 27, and an alignment process such as a rubbing process of rubbing with a cloth or the like is performed. When the rubbing process is performed, the liquid crystal molecules 23 are oriented at a specific angle (tilt angle 24) with respect to the main surface of the pixel electrode substrate 27 in the rubbing direction (the direction rubbed with a cloth or the like) without applying an electric field. To orient. On the other hand, in the reverse tilt domain, since the force of the transverse electric field 42 is strong, the liquid crystal molecules having the property of an electric dipole are applied to the pixel electrode substrate 27 at a different angle (reverse tilt 25) from the other regions. In contrast, they will be oriented. Accordingly, the reverse tilt domain has a different optical property from other regions, and causes deterioration of image quality such as afterimages and uneven lighting.

リバースチルトドメインは共通電極基板 2 8あるいは画素電極基板 2 7に形成された遮光膜で隠すことにより目立たなくすることも可能で あるが、 画素の開口率を低下させることになり表示装置の輝度を低下さ せる原因となっていた。  The reverse tilt domain can be made inconspicuous by hiding it with a light-shielding film formed on the common electrode substrate 28 or the pixel electrode substrate 27.However, the aperture ratio of the pixel is reduced, and the brightness of the display device is reduced. This was the cause of the decline.

本発明の目的は、 リバースチルトドメインを小さくし、 残像、 点灯 不均一等の画像不良をなくすことにある。 The object of the present invention is to reduce the reverse tilt domain, It is to eliminate image defects such as unevenness.

また本発明の他の目的は、 リバースチルトドメインのために、 画素 を遮光する領域を減らし、 開口率を向上して、 明るい液晶表示装置を提 供することにある。  It is another object of the present invention to provide a bright liquid crystal display device in which a region for shielding a pixel from light is reduced and an aperture ratio is improved for a reverse tilt domain.

[発明の開示]  [Disclosure of the Invention]

上記目的は、 横電界が強くなる隣接する画素電極間に対応する共通 電極に、 スリット状の開口等の、 電極不在部分を形成し、 上記電極不在 部分の中心を隣接する画素電極間の中心よりもリバースチルトドメイン が発生する側にずらして設けることにより、 達成される。  The above object is to form a non-electrode portion such as a slit-shaped opening in a common electrode corresponding to an adjacent pixel electrode in which a horizontal electric field becomes strong, and to center the non-electrode portion from the center between adjacent pixel electrodes. Can be achieved by shifting the reverse tilt domain to the side where the reverse tilt domain occurs.

第 1図及び第 2図はそれぞれ、 本発明の原理を説明するための液晶 表示装置の、 断面図及び平面図である。 各符号は、 先に説明した第 1 3 図と同じ符号を用いているので、 符号の詳細な説明は省略する。 なお第 1図は第 2図の A— A線に沿つた断面図である。  1 and 2 are a cross-sectional view and a plan view, respectively, of a liquid crystal display device for explaining the principle of the present invention. Since the same reference numerals are used as those in FIG. 13 described above, detailed description of the reference numerals is omitted. FIG. 1 is a sectional view taken along the line AA of FIG.

本発明では、 隣接する画素電極 1 8 ( a ) 、 1 8 ( b ) の電極間領 域に対応して、 共通電極 3 1に電極が存在しない領域(共通電極不在部 3 3 ) が設けられている。 上記共通電極不在部 3 3の中心 3 5は、 画素 電極間中心 3 4に対し、 リバースチルトドメイン 3 2が発生する側にず らして設けられている。  In the present invention, a region where no electrode exists in the common electrode 31 (common electrode absence portion 33) is provided corresponding to the inter-electrode region of the adjacent pixel electrodes 18 (a) and 18 (b). ing. The center 35 of the common electrode absence part 33 is provided so as to be shifted from the center 34 between the pixel electrodes on the side where the reverse tilt domain 32 is generated.

第 3図は本発明を採用した液晶表示装置の電界の様子を示した、 液 晶表示装置の断面図である。  FIG. 3 is a cross-sectional view of the liquid crystal display device showing the state of the electric field of the liquid crystal display device employing the present invention.

本発明によれば、 共通電極不在部 3 3の中心 3 5をずらした側の画 素電極 1 8 ( b ) の端部では、 等電位線 4 0が傾いている領域が狭くな つている。 これは、 共通電極不在部 3 3の中心 3 5をずらした側の画素 電極 1 8 ( b ) 端では、 横電界 4 2の成分が強い領域が狭くなつている ことを意味する。 電気力線 4 1の形を見ても、 共通電極不在部 3 3の中 心 3 5をずらした側の画素電極 1 8 ( b ) の端部では、 電気力線の傾斜 が大きく、 横電界 42の成分が弱くなつていることが理解出来る。 According to the present invention, the region where the equipotential lines 40 are inclined is narrower at the end of the pixel electrode 18 (b) on the side where the center 35 of the common electrode absence portion 33 is shifted. This means that, at the end of the pixel electrode 18 (b) on the side where the center 35 of the common electrode absent portion 33 is shifted, the region where the component of the horizontal electric field 42 is strong becomes narrower. Looking at the shape of the line of electric force 4 1, the inclination of the line of electric force at the end of the pixel electrode 18 (b) on the side shifted from the center 35 of the common electrode absence part 3 3 It can be understood that the component of the lateral electric field 42 is weakened.

従って本発明によれば、 リバースチルトドメイン 3 2が発生する画 素電極 1 8 (b) 端部の横電界成分 42を弱くすることができるので、 リバースチルトドメィンの発生する範囲を小さくすることができる。 なお共通電極不在部 33の中心 35から遠ざかる側の画素電極 1 8 ( a )端部の横電界成分 42は強くなるが、 画素電極 1 8 ( a ) 端部は リバースチルトドメインが発生しない側なので、 問題は生じない。 図 3 に示す画素電極 1 8 (a) 端部がリバースチルトドメインが発生しない 理由は、 画素電極 1 8 (a) 側の端部では、 横電界 42が液晶分子 23 を本来のチルト角 24方向に配向させる働きをするためである。  Therefore, according to the present invention, since the lateral electric field component 42 at the end of the pixel electrode 18 (b) where the reverse tilt domain 32 is generated can be weakened, the range in which the reverse tilt domain occurs can be reduced. Can be. The lateral electric field component 42 at the end of the pixel electrode 18 (a) away from the center 35 of the common electrode absent part 33 becomes stronger, but the end of the pixel electrode 18 (a) has no reverse tilt domain. , There is no problem. The reason why the reverse tilt domain does not occur at the end of the pixel electrode 18 (a) shown in FIG. 3 is that at the end on the pixel electrode 18 (a) side, the horizontal electric field 42 causes the liquid crystal molecules 23 to move to the original tilt angle 24 direction. This is because it functions to orient the crystal.

第 4図は、 本発明を適用した液晶表示装置と共通電極不在部を設け ていない従来の液晶表示装置の、 画素電極間領域付近の光遮断能力を比 較した、 グラフである。 横軸は画素電極間中心 34を 0点とした位置で ある。 単位は zm、 縦軸は光の透過率である。 45が本発明の透過率曲 線であり、 46が従来の液晶表示装置の透過率曲線である。 第 4図から 明らかなように、 本発明の液晶表示装置の光が抜ける領域 32 bは従来 の光が抜ける領域 32 aよりも、 画素電極間中心 34側に寄っている。 この光が抜ける領域がリバースチルトドメインに対応している。  FIG. 4 is a graph comparing the light blocking ability in the vicinity of a region between pixel electrodes between a liquid crystal display device to which the present invention is applied and a conventional liquid crystal display device having no common electrode absent portion. The horizontal axis is the position with the center 34 between the pixel electrodes as the zero point. The unit is zm, and the vertical axis is the light transmittance. 45 is the transmittance curve of the present invention, and 46 is the transmittance curve of the conventional liquid crystal display device. As is apparent from FIG. 4, the light-exiting region 32b of the liquid crystal display device of the present invention is closer to the center 34 between the pixel electrodes than the conventional light-exiting region 32a. The region through which the light passes corresponds to the reverse tilt domain.

従って本発明によれば、 画素電極で光の透過を制御することが出来 ない領域を画素電極間中心 34に近い狭い領域に閉じ込めることができ るので、 第 1図及び第 2図に示すように、 第 1遮光体 2あるいは第 2遮 光体 29で遮光する領域を狭くすることが出来、 画素部の開口率を向上 させることができる。  Therefore, according to the present invention, a region where light transmission cannot be controlled by the pixel electrode can be confined in a narrow region near the center 34 between the pixel electrodes, and as shown in FIG. 1 and FIG. In addition, the area shielded by the first light shield 2 or the second light shield 29 can be reduced, and the aperture ratio of the pixel portion can be improved.

第 4図に示すデータは、 画素電極間隔が 1. 8 zm、 共通電極不在 部 33のスリットの幅を 3. 0 //m、 さらに画素電極間中心 34に対し 共通電極不在部 33のスリットの中心 35を 1. 35 yamTFT基板の ラビング方向にずらして配置した場合を示している。 第 4図に示すデー 夕によれば、 上記の条件で本発明を実施することにより、 リバースチル トドメインを従来よりも 1 m程度画素電極間中心 3 4側に寄せること ができる。 The data shown in Fig. 4 shows that the pixel electrode interval is 1.8 zm, the width of the slit in the common electrode absence part 33 is 3.0 // m, and the slit in the common electrode absence part 33 is Center 35 1.35 yamTFT substrate The figure shows a case where they are arranged shifted in the rubbing direction. According to the data shown in FIG. 4, by implementing the present invention under the above conditions, the reverse tilt domain can be brought closer to the center 34 between the pixel electrodes by about 1 m than the conventional one.

よって開口部を 1 m程度広く取ることが出来、 点灯領域内にリバ ースチルトドメインが発生せず、 電極不在部 3 3も点灯領域内にはない ため均一な画像表示を得ることができる。  Therefore, the opening can be made as wide as about 1 m, a reverse tilt domain does not occur in the lighting region, and the electrode absence portion 33 is not in the lighting region, so that a uniform image display can be obtained.

次にリバースチルトドメィンが発生する方向について説明する。  Next, the direction in which the reverse tilt domain occurs will be described.

第 6図 (A ) 乃至第 6図 (E ) は、 リバースチルトドメインが発生 する方向を説明するための、 液晶表示装置の画素部の平面図である。 第 6図 (A ) 乃至第 6図 (E ) は、 画素電極 1 8 ( a )、 1 8 ( b ) 間に 異なる極性の電圧を印加した場合に、 画素電極基板 2 7の配向膜 2 1の ラビング方向 2 6と共通電極基板 2 8の配向膜 2 2のラビング方向 3 6 との関係により、 リバースチルトドメインの出る方向を示したものであ る。 。 なお第 6図 (A ) 乃至第 6図 (E ) は共通電極基板 2 8の上から 見た場合の平面図を示している。  6 (A) to 6 (E) are plan views of a pixel portion of a liquid crystal display device for explaining a direction in which a reverse tilt domain occurs. FIGS. 6 (A) to 6 (E) show the alignment film 21 of the pixel electrode substrate 27 when different polarities are applied between the pixel electrodes 18 (a) and 18 (b). The relationship between the rubbing direction 26 and the rubbing direction 36 of the alignment film 22 of the common electrode substrate 28 indicates the direction in which the reverse tilt domain emerges. . 6A to 6E show plan views when viewed from above the common electrode substrate 28. FIG.

第 6図 (A ) に示す例では、 画素電極基板 2 7は画素電極間中心線 3 4に沿って右向き (矢印 2 6の方向) にラビングを行い、 共通電極基 板 2 8は画素電極基板のラビング方向 2 6に対し 9 0度反時計回りの方 向 3 6にラビングを行った場合を示しており、 画素電極間中心線 3 4に 対して画素電極基板のラビング方向 2 6の右側の画素電極 1 8 ( b ) の 端部にリバースチルトドメインが発生している。  In the example shown in FIG. 6 (A), the pixel electrode substrate 27 rubs rightward (in the direction of the arrow 26) along the center line 34 between the pixel electrodes, and the common electrode substrate 28 is the pixel electrode substrate. 9 shows a case where rubbing is performed 90 degrees counterclockwise with respect to the rubbing direction 26 of the pixel electrode substrate, and the right side of the rubbing direction 26 of the pixel electrode substrate with respect to the center line 34 between the pixel electrodes. A reverse tilt domain is generated at the end of the pixel electrode 18 (b).

第 6図 (B ) に示す例では、 画素電極基板 2 7は画素電極間中心線 3 4に対して 4 5度時計回り (矢印 2 6の方向) にラビングを行い、 共 通電極基板 2 8は画素電極基板のラビング方向 2 6に対し 9 0度反時計 回りの方向 3 6にラビングを行った場合を示しており、 画素電極間中心 線 3 4に対して画素電極基板のラビング方向 2 6の画素電極 1 8 ( b ) の端部にリバースチルトドメィンが発生している。 In the example shown in FIG. 6 (B), the pixel electrode substrate 27 is rubbed 45 degrees clockwise (in the direction of the arrow 26) with respect to the center line 34 between the pixel electrodes, and the common electrode substrate 27 is rubbed. Indicates the case where the rubbing is performed 90 degrees counterclockwise 36 with respect to the rubbing direction 26 of the pixel electrode substrate. A reverse tilt domain is generated at the end of the pixel electrode 18 (b) in the rubbing direction 26 of the pixel electrode substrate with respect to the line 34.

第 6図 (C ) に示す例では、 画素電極基板 2 7は画素電極間中心線 3 4に対して 9 0度時計回り (矢印 2 6の方向) にラビングを行い、 共 通電極基板 2 8は画素電極基板のラビング方向 2 6に対し 9 0度反時計 回りの方向 3 6にラビングを行った場合を示しており、 画素電極間中心 線 3 4に対して画素電極基板のラビング方向 2 6の画素電極 1 8 ( b ) の端部にリバースチルトドメインが発生している。  In the example shown in FIG. 6 (C), the pixel electrode substrate 27 is rubbed 90 degrees clockwise (in the direction of arrow 26) with respect to the center line 34 between the pixel electrodes, and the common electrode substrate 28 is rubbed. Shows the case where the rubbing is performed 90 degrees counterclockwise 36 with respect to the rubbing direction 26 of the pixel electrode substrate, and the rubbing direction 26 of the pixel electrode substrate with respect to the center line 34 between the pixel electrodes. A reverse tilt domain is generated at the end of the pixel electrode 18 (b).

第 6図 (D ) に示す例では、 画素電極基板 2 7は画素電極間中心線 3 4に対して 1 3 5度時計回り (矢印 2 6の方向) にラビングを行い、 共通電極基板 2 8は画素電極基板のラビング方向 2 6に対し 9 0度反時 計回りの方向 3 6にラビングを行った場合を示しており、 画素電極間中 心線 3 4に対して画素電極基板のラビング方向 2 6の画素電極 1 8 ( b ) の端部にリバースチルトドメインが発生している。  In the example shown in FIG. 6 (D), the pixel electrode substrate 27 rubs clockwise (in the direction of arrow 26) by 135 degrees with respect to the center line 34 between the pixel electrodes, and the common electrode substrate 28 Shows the case where rubbing is performed 90 degrees counterclockwise with respect to the rubbing direction 26 of the pixel electrode substrate 36, and the rubbing direction of the pixel electrode substrate with respect to the center line 34 between the pixel electrodes. Reverse tilt domains are generated at the ends of the 26 pixel electrodes 18 (b).

第 6図 (E ) に示す例では、 画素電極基板 2 7は第 6図 (A ) に示 す例の画素電極基板のラビング方向に対して 1 8 0度時計回り (矢印 2 6の方向) にラビングを行い、 共通電極基板 2 8は画素電極基板のラビ ング方向 2 6に対し 9 0度反時計回りの方向 3 6にラビングを行った場 合を示しており、 画素電極間中心線 3 4に対して画素電極基板のラビン グ方向 2 6の右側の画素電極 1 8 ( a ) の端部にリバースチルト ドメィ ンが発生している。  In the example shown in FIG. 6 (E), the pixel electrode substrate 27 is 180 degrees clockwise (in the direction of arrow 26) with respect to the rubbing direction of the pixel electrode substrate in the example shown in FIG. 6 (A). The rubbing is performed in the direction of 90 ° counterclockwise with respect to the rubbing direction 26 of the pixel electrode substrate, and the common electrode substrate 28 is rubbed in the counterclockwise direction 36. A reverse tilt domain occurs at the end of the pixel electrode 18 (a) on the right side of the pixel electrode substrate in the rubbing direction 26 with respect to 4.

これらの結果から分かることは、 画素電極基板のラビング方向 2 6 と共通電極基板のラビング方向 3 6と反対の方向で張られる間の方向 3 8にリバースチルトドメインが発生しやすいということである。  It can be seen from these results that a reverse tilt domain is easily generated in a direction 38 between the rubbing direction 26 of the pixel electrode substrate and a direction opposite to the rubbing direction 36 of the common electrode substrate.

なお第 6図 (D ) に示す例では、 リバースチルト ドメインが発生し やすい方向 3 8は画素電極間中心線 3 4の方向を向いているので、 画素 電極 1 8 ( a ) 、 1 8 ( b ) のどちらの側にもリバースチルトドメイン が発生し難いように思えるが、 画素電極基板のラビング方向 2 6が画素 電極 1 8 ( b ) の方向を向いているので、 画素電極 1 8 ( b ) にリバ一 スチルトドメインが発生する。 In the example shown in FIG. 6 (D), the direction 38 in which the reverse tilt domain is likely to occur is oriented in the direction of the center line 34 between the pixel electrodes. It seems that the reverse tilt domain hardly occurs on both sides of the electrodes 18 (a) and 18 (b), but the rubbing direction 26 of the pixel electrode substrate faces the direction of the pixel electrode 18 (b). Therefore, a reverse tilt domain is generated in the pixel electrode 18 (b).

これは液晶分子 2 3の方向 4 4が、 画素電極基板 2 7から共通電極 基板 2 8に行くに従って、 画素電極基板のラビング方向 2 6から共通電 極基板のラビング方向 3 6と反対の方向に向かって回転する、 螺旋構造 をしていることに起因する。 すなわち、 画素電極基板 2 7から少し上が つた位置の液晶分子の方向 4 4は、 画素電極基板のラビング方向 2 6に 近い方向に有り、 画素電極基板のラビング方向 2 6側にある画素電極に リバースチルト ドメインが発生しやすくなる。  This is because, as the direction 44 of the liquid crystal molecules 23 goes from the pixel electrode substrate 27 to the common electrode substrate 28, the rubbing direction 26 of the pixel electrode substrate is opposite to the rubbing direction 36 of the common electrode substrate. This is due to the spiral structure that rotates toward. That is, the direction 44 of the liquid crystal molecules at a position slightly above the pixel electrode substrate 27 is in a direction close to the rubbing direction 26 of the pixel electrode substrate, and is directed to the pixel electrode on the rubbing direction 26 side of the pixel electrode substrate. Reverse tilt domains are more likely to occur.

しかしリバースチルト ドメインが発生する大きさは、 第 6図 (D ) に示す例が最も少なくなつている。  However, the size of the occurrence of the reverse tilt domain is smallest in the example shown in Fig. 6 (D).

従って本発明では、 画素電極基板のラビング方向 2 6に共通電極不 在部 3 3の中心をずらすことにより、 リバースチルトドメインを画素電 極間中心 3 4の近くに寄せることができる。  Therefore, in the present invention, the reverse tilt domain can be brought closer to the pixel electrode center 34 by shifting the center of the common electrode absence part 33 in the rubbing direction 26 of the pixel electrode substrate.

なお画素電極基板 2 7及び共通電極基板 2 8側のラビング方向は、 下配向膜 2 1及び上配向膜 2 2に接する液晶層のチルト角を調べること により特定することが出来る。 すなわち、 各基板に対し液晶分子がチル ト角を持つ方向がラビング処理を行った方向である。  Note that the rubbing direction on the pixel electrode substrate 27 and the common electrode substrate 28 side can be specified by examining the tilt angle of the liquid crystal layer in contact with the lower alignment film 21 and the upper alignment film 22. That is, the direction in which the liquid crystal molecules have a tilt angle with respect to each substrate is the direction in which the rubbing process is performed.

チルト角を測定するための確定された方法としては、 クリスタル口 —テ一シヨン法がある。  A definitive method for measuring tilt angle is the crystal mouth-tissue method.

また本発明では、 液晶層の自発螺旋ピッチを、 従来よりも短い、 液 晶層の厚さの 6倍から 1 0倍のものを使うことにより、 リバースチルト ドメィンをさらに小さくすることが出来る。  In the present invention, the reverse tilt domain can be further reduced by using a spontaneous helical pitch of the liquid crystal layer that is 6 to 10 times the thickness of the liquid crystal layer, which is shorter than before.

ツイストネマティ ック液晶は、 第 6図で説明した様に、 画素電極基 板 2 7からの高さが高くなるに従って、 液晶分子 2 3の配向方向 4 4が 特定の向に回転する、 螺旋構造をしている。 ツイストネマティック液晶 の螺旋構造は、 画素電極基板 2 7と共通電極基板 2 8のラビング方向 2 6、 3 6によっても形成できるが、 液晶層の中にカイラル剤と呼ばれる 液晶分子 2 3に自発的な回転力を与える物質を入れることにより形成す ることが出来る。 Twisted nematic liquid crystal has a pixel electrode base as described in Fig. 6. The liquid crystal molecules 23 have a helical structure in which the orientation direction 44 of the liquid crystal molecules 23 rotates in a specific direction as the height from the plate 27 increases. The spiral structure of twisted nematic liquid crystal can also be formed by the rubbing directions 26, 36 of the pixel electrode substrate 27 and the common electrode substrate 28, but the liquid crystal layer is spontaneously formed by liquid crystal molecules 23 called a chiral agent. It can be formed by adding a substance that gives rotational force.

厚さが充分大きなツイストネマティ ック液晶層を考えた場合、 画素 電極基板 2 7から特定の高さの液晶分子 2 3の配向方向は、 液晶分子の 自発的な回転力により、 画素電極基板 2 7の近傍の液晶分子 2 3の配向 方向と同じになる。 この時の液晶分子 2 3の画素電極基板 2 7からの高 さが自発螺旋ピッチである。  Considering a sufficiently thick twisted nematic liquid crystal layer, the alignment direction of liquid crystal molecules 23 at a specific height from the pixel electrode substrate 27 is determined by the spontaneous rotational force of the liquid crystal molecules. This is the same as the orientation direction of the liquid crystal molecules 23 near 27. The height of the liquid crystal molecules 23 from the pixel electrode substrate 27 at this time is the spontaneous spiral pitch.

従来は、 自発螺旋ピッチがリバースチルト ドメイン幅に大きな影響 を与えるという認識がなかったので、 液晶表示パネルの駆動電圧を低く するため、 液晶層の自発螺旋ピッチは液晶層の厚さの 1 2倍から 1 5倍 の、 長めのものを使用していた。  In the past, there was no recognition that the spontaneous spiral pitch had a large effect on the reverse tilt domain width, so the spontaneous spiral pitch of the liquid crystal layer was 12 times the thickness of the liquid crystal layer in order to lower the driving voltage of the liquid crystal display panel. 15 to 15 times longer.

第 5図は自発螺旋ピッチとリバースチルト ドメインの幅との関係を 示したグラフである。  FIG. 5 is a graph showing the relationship between the spontaneous spiral pitch and the width of the reverse tilt domain.

第 5図の横軸は自発螺旋ピッチの長さ。 単位は z m。 縦軸は 'Jバ一 スチルトドメインの画素電極 1 8の端部から、 リバースチルトドメイン と正常な表示領域の境界線 (ディスクリ ミネ一シヨンライン) までの距 離、 すなわちリバースチルト ドメインの幅である。 単位は〃 m。 なおリ バースチルトドメインを測定した液晶表示装置の液晶層の厚さは 3 m 1の■©。  The horizontal axis in Fig. 5 is the length of the spontaneous spiral pitch. The unit is z m. The vertical axis is the distance from the edge of the pixel electrode 18 in the J-B tilt domain to the boundary between the reverse tilt domain and the normal display area (discrimination line), that is, the width of the reverse tilt domain. It is. The unit is 〃 m. The thickness of the liquid crystal layer of the liquid crystal display device whose reverse tilt domain was measured was 3 m1.

第 5図から明らかなように、 自発螺旋ピッチを短くすることにより リバースチルト ドメインの幅を小さくすることが出来る。  As is clear from Fig. 5, the width of the reverse tilt domain can be reduced by reducing the spontaneous spiral pitch.

従って本発明では、 液晶層の自発螺旋ピッチを従来よりも短い、 液 晶層の厚さの 1 0倍以下にすることにより、 リバースチルトドメインの 幅を小さくした。 Therefore, in the present invention, the spontaneous spiral pitch of the liquid crystal layer is shorter than that of the conventional liquid crystal layer. The width of the reverse tilt domain was reduced by making it 10 times or less the thickness of the crystal layer.

しかし自発螺旋ピッチを小さくし過ぎると、 画素電極 1 8により液 晶分子 2 3の配向を制御するのが難しくなるので、 液晶層の自発螺旋ピ ツチは、 液晶層の厚さの 6倍から 1 0倍のものが最適である。  However, if the spontaneous spiral pitch is too small, it becomes difficult to control the orientation of the liquid crystal molecules 23 by the pixel electrode 18, so that the spontaneous spiral pitch of the liquid crystal layer is 6 to 1 times the thickness of the liquid crystal layer. A factor of 0 is optimal.

なお、 日本国特許公開公報特開平 6 - 2 8 1 9 5 9号及び特開平 6 - 1 1 8 4 4 7号には、 薄膜トランジスタのドレイン線上の共通電極に スリットを設ける記載があるが、 画素電極端部のリバースチルトドメイ ンを無くす思想が全く無いため、 共通電極電極不在部分の中心を隣接す る画素電極間の中心よりもリバースチルトドメインが発生する側にずら して設ける本発明の構成は全く記載されていなかった。 また上記先行技 術には、 自発螺旋ピッチを液晶層の厚さの 6倍から 1 0倍にした液晶表 示装置の記載も無かった。  It should be noted that Japanese Patent Laid-Open Publication Nos. Hei 6-281959 and Hei 6-118447 describe that a slit is formed in a common electrode on a drain line of a thin film transistor. Since there is no idea to eliminate the reverse tilt domain at the electrode end, the configuration of the present invention in which the center of the portion where the common electrode electrode is absent is shifted from the center between adjacent pixel electrodes to the side where the reverse tilt domain occurs. Was not described at all. Further, the above prior art did not describe a liquid crystal display device in which the spontaneous spiral pitch was increased from 6 times to 10 times the thickness of the liquid crystal layer.

その他にも共通電極にスリツ トを設ける構成は、 日本国特許公開公 報特開平 9一 2 3 6 8 2 1号、 特開平 1 1 一 1 7 4 4 8 1号及び特開平 1 1 - 1 7 4 4 8 2号に記載があるが、 何れもリバースチルトドメイン のことは全く考慮されていな L、ので、 共通電極電極不在部分の中心を隣 接する画素電極間の中心よりもリバースチルトドメィンが発生する側に ずらして設ける構成も、 自発螺旋ピッチを液晶層の厚さの 6倍から 1 0 倍にした液晶表示装置の記載も無かった。  In addition, the configuration in which a slit is provided on the common electrode is disclosed in Japanese Patent Publication Nos. 9-1326381, 1989-111 and 411-1-1. As described in No. 7 4 4 82, the reverse tilt domain is not considered in any case, so the center of the portion where the common electrode is absent is more reverse tilt domain than the center between adjacent pixel electrodes. There is no description of a configuration in which the spontaneous helical pitch is shifted from the thickness of the liquid crystal layer to 6 to 10 times the thickness of the liquid crystal layer.

[図面の簡単な説明]  [Brief description of drawings]

第 1図は本発明の基本構成を説明するための液晶表示装置の断面図 である。  FIG. 1 is a sectional view of a liquid crystal display device for explaining a basic configuration of the present invention.

第 2図は本発明の基本構成を説明するための液晶表示装置の画素部 の平面図である。  FIG. 2 is a plan view of a pixel portion of a liquid crystal display device for explaining a basic configuration of the present invention.

第 3図は本発明を採用した液晶表示装置の電界の様子を示した、 液 晶表示装置の断面図である。 FIG. 3 shows a state of an electric field of a liquid crystal display device employing the present invention. It is sectional drawing of a crystal display device.

第 4図は、 本発明を適用した液晶表示装置と従来の液晶表示装置の 、 画素電極間領域付近の光遮断能力を比較した、 グラフである。  FIG. 4 is a graph showing a comparison between the liquid crystal display device to which the present invention is applied and the conventional liquid crystal display device in terms of light blocking ability near the region between pixel electrodes.

第 5図は自発螺旋ピッチとリバースチルトドメインの幅との関係を 示したグラフである。  FIG. 5 is a graph showing the relationship between the spontaneous spiral pitch and the width of the reverse tilt domain.

第 6図 (A ) から第 6図 (E ) は、 リバースチルトドメインが発生 する方向を説明するための、 液晶表示装置の画素部の平面図である。 第 7図は本発明の実施形態 1における、 液晶表示装置の画素部の平 面図である。  6 (A) to 6 (E) are plan views of a pixel portion of a liquid crystal display device for explaining a direction in which a reverse tilt domain occurs. FIG. 7 is a plan view of a pixel portion of the liquid crystal display device according to the first embodiment of the present invention.

第 8図は本発明の実施形態 1における、 液晶表示装置の画素部の断 面図である。  FIG. 8 is a cross-sectional view of a pixel portion of the liquid crystal display device according to the first embodiment of the present invention.

第 9図は本発明の実施形態 2における、 各画素電極の極性を示す、 液晶表示装置の表示部の平面図である。  FIG. 9 is a plan view of a display section of a liquid crystal display device showing the polarity of each pixel electrode in Embodiment 2 of the present invention.

第 1 0図は本発明の実施形態 2における、 液晶表示装置の画素部の 平面図である。  FIG. 10 is a plan view of a pixel portion of a liquid crystal display device according to Embodiment 2 of the present invention.

第 1 1図は本発明の実施形態 3における、 各画素電極の極性を示す 、 液晶表示装置の表示部の平面図である。  FIG. 11 is a plan view of a display section of a liquid crystal display device showing the polarity of each pixel electrode in Embodiment 3 of the present invention.

第 Γ 2図は本発明の実施形態 3における、 液晶表示装置の画素部の 平面図である。  FIG. 2 is a plan view of a pixel portion of a liquid crystal display device according to Embodiment 3 of the present invention.

第 1 3図は従来の液晶表示装置の、 画素部を示す断面図である。 第 1 4図はライン反転駆動を行っている液晶表示装置の、 各画素電 極の極性を示す、 表示部の平面図である。  FIG. 13 is a cross-sectional view showing a pixel portion of a conventional liquid crystal display device. FIG. 14 is a plan view of a display section showing the polarity of each pixel electrode of the liquid crystal display device performing the line inversion drive.

[発明を実施するための最良の形態]  [Best Mode for Carrying Out the Invention]

以下、 図面を用いて本発明の実施形態について詳細に説明する。 な お、 以下で説明する図面で、 同一機能を有するものは同一符号を付け、 その繰返しの説明は省略する。 実施形態 1 Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In the drawings described below, components having the same function are denoted by the same reference numerals, and the description thereof will not be repeated. Embodiment 1

第 7図は本発明の一実施形態における液晶表示装置の平面図、 第 8 図は第 7図の a - a線及び b - b線で切った断面図である。 なお第 7図 は共通電極基板 2 8の上から見た平面図である。  FIG. 7 is a plan view of a liquid crystal display device according to an embodiment of the present invention, and FIG. 8 is a cross-sectional view taken along line aa and line bb of FIG. FIG. 7 is a plan view of the common electrode substrate 28 as viewed from above.

本実施形態は、 先に第 1 4図で説明したライン反転駆動方式の液曰 曰曰 表示装置を対象としたもので、 一つの行の画素電極 1 8 ( a ) と隣接す る行の画素電極 1 8 ( b ) の極性を反転した液晶表示装置で、 共通電極 The present embodiment is directed to the display device described in the liquid of the line inversion driving method described above with reference to FIG. 14, and the pixel electrode 18 (a) of one row and the pixel of the adjacent row are used. A liquid crystal display in which the polarity of electrode 18 (b) is inverted, and the common electrode

3 1に走査信号線(ゲート信号線) 8と平行な方向にスリット状の電極 不在部 3 3を設け、 該電極不在部 3 3の中心を走査信号線 8と平行な画 素電極間中心 3 4に対してリバースチルトドメインが発生する側、 すな わち画素電極基板側のラビング方向 2 6にずらして設けたものである。 スリッ ト状の電極不在部 3 3は遮光体 4及び 9のパターン内或いはA slit-shaped electrode absent portion 33 is provided in the direction parallel to the scanning signal line (gate signal line) 8 in the direction 1, and the center of the electrode absent portion 33 is set to the center 3 between pixel electrodes parallel to the scanning signal line 8. 4 is shifted in the rubbing direction 26 on the side where the reverse tilt domain occurs, that is, on the pixel electrode substrate side. The slit-shaped electrode-free portion 33 is located in the pattern of the light shields 4 and 9 or

、 薄膜トランジスタ基板 (画素電極基板) 2 7に形成されている、 容量 電極 4等の、 遮光金属層のパターン内に配置する。 It is arranged in a pattern of a light shielding metal layer such as a capacitor electrode 4 formed on a thin film transistor substrate (pixel electrode substrate) 27.

このように、 共通電極 3 1にスリッ ト状の電極不在部 3 3を設けた ことにより、 第 3図で説明したように、 等電位線 4 0の分布が変化し、 その結果、 第 4図で説明したように、 リバースチルト 2 5の領域が従来 より画素電極間中心 3 4側に寄せることができる。  By providing the slit-shaped electrode absence portion 33 on the common electrode 31 as described above, the distribution of the equipotential lines 40 changes as described in FIG. 3, and as a result, FIG. As described above, the region of the reverse tilt 25 can be closer to the center 34 between the pixel electrodes than the conventional case.

よって、 遮光体 4 、 9でリバースチルトドメイン 3 2を隠す領域を 狭くすることができるので、 開口部を広く取ることが出来、 明るい画像 表示を得ることができる。  Therefore, the area where the reverse tilt domain 32 is hidden by the light shields 4 and 9 can be narrowed, so that the opening can be widened and a bright image display can be obtained.

また、 光が透過する領域内にリバースチルトドメイン 3 2が発生す ることがないので、 光抜け等により表示コントラストが低下することが なく、 表示画質を向上することができる。  In addition, since the reverse tilt domain 32 is not generated in the region where light is transmitted, display contrast is not reduced due to light leakage or the like, and display quality can be improved.

しかも、 電極不在部 3 3も光が透過する領域内にはないため、 表示 画質が低下することがない。 次に第 7図及び第 8図に示す本実施形態の詳細について説明する。 第 8図の符号 27は画素電極基板 (TFT基板、 第 1の基板) で、 石英ガラスや軟化点が 1000°C以下のガラス等の透明な絶縁物からな る。 1は下地膜 (第 1絶縁膜) で、 S i 02、 S i N、 Ta 205、 AL 203等の透明な絶縁膜で、 画素電極基板に含まれるアルカリ成分が液 晶中ゃ薄膜トランジスタの半導体層中に漏れることを防止するために設 けている。 2は第 1遮光膜 (裏面遮光層、 T FT基板遮光膜) で、 C r 、 A l、 Ta、 Mo等の遮光金属層や、 絶縁膜に染料や顔料を添加した 遮光絶縁層からなり、 T F Tのチヤネル部の半導体層を遮光し T F Tの 誤動作を防止している。 3は第 2絶縁膜で、 S i 02、 S i N、 Ta2 05、 AL 203等の透明な絶縁膜で、 TFT基板遮光膜 2と TFTを絶 縁するために設けている。 なお T F T基板遮光膜 2が絶縁性遮光膜の場 合は第 2絶縁膜 3はなくても良い。 4は第 1容量電極 (容量形成層) で 、 C r、 A 1、 T a、 Mo等の金属層からなり、 画素電極 18の電位を 保持する保持容量 20の構成要素の一つである。 第 1容量電極 4は TF T基板 27の遮光膜 (第 2遮光膜) としても機能し、 リバースチルトド メイン 32や共通電極不在部 33を遮光する機能も果たす。 5は第 3絶 縁膜で、 S i 02、 S i N、 T a 205、 AL 203等の透明な絶縁膜か らなり、 保持容量 20の誘電体として機能する。 6は半導体層で、 TF T 19のチャネル層や保持容量 20の一方の電極 (第 2容量電極) とし て機能する。 半導体層 6の材料としては減圧 CVD法で形成したポリシ リコンゃ、 アモルファスシリコン膜にレーザ一光を照射して形成したポ リシリコンや、 プラズマ CVD法で形成したアモルファスシリコン膜を 使用することが出来る。 7はゲート絶縁膜 (第 4絶縁膜) で、 S i 02 、 S i N等からなり、 TFT 19のゲート絶縁膜の他に保持容量 20の 誘電体としても機能する。 8はゲート電極層で、 ポリシリコンや金属層 からなり、 TF T 1 9のゲート電極、 ゲート配線(走査信号線) 、 保持 容量 2 0の他方の電極(第 3容量電極) を形成している。 9はソース · ドレイン電極層で、 C r、 A 1、 T a、 Mo等の金属層からなり、 TF T 1 9のソース電極、 ドレイン電極、 映像信号線(ドレイン配線) 、 保 持容量 2 0の一方の電極(第 4容量電極) を形成する。 なお TFT 1 9 のソース電極、 ドレイン電極の関係は、 本来は電圧のかけ方によって変 わるが、 以下の記載では、 便宜上、 映像信号線に接続される側をドレイ ン電極と呼び、 画素電極 1 8に接続される側をソース電極と呼ぶことに する。 1 0は層間絶縁膜 (第 5絶縁膜) で、 S i 02、 S i N、 T a 2 05、 AL 203等の透明な絶縁膜からなり、 ゲート配線 8とドレイン線 9の絶縁、 保持容量 20の誘電体の役目を果たす。 1 1は層間絶縁膜( 第 6絶縁膜) で、 S i 02、 S i N、 T a 205、 AL 203等の透明な 絶縁膜からなり、 この後で説明する配線層 1 2とドレイン電極 9ゃゲ一 ト配線 8の絶縁を行っている。 1 2は配線層で、 C r、 A I、 T a、 M o、 モリブデンシリサイド、 タングステンシリサイド等の導電膜からな り、 ソース電極 9と画素電極 1 8を電気的に接続している。 配線層 1 2 は保持容量電極 4、 9とゲート配線 8間の隙間を遮光する遮光膜(第 3 遮光膜) の役目も果たす。 1 3は層間絶縁膜(第 7絶縁膜) で、 S i 0 2からなり、 隣接する画素の画素電極 1 8 (a) と配線層 1 2の絶縁を 行っている。 1 4も層間絶縁膜(第 8絶縁膜) で、 S i Nからなり、 隣 接する画素の画素電極 1 8 (a) と配線層 1 2の絶縁を行っている。 1 5は平坦化膜 (第 9絶縁膜) であり、 ポリイミ ドゃエポキシ等の透明な 絶縁樹脂や、 フォトレジスト等の感光性の透明な有機膜や、 比較的膜厚 の厚い S i 02膜、 S i N膜等の透明な無機絶縁膜からなり、 画素電極 1 8を形成する面を平坦にして、 画素電極 1 8が発生する電界が均一な 縦電界になるようにしている。 1 8は画素電極で、 I TO (indium tin oxide) 等の透明導電膜からなり、 液晶分子 23に電界をかけて配向方 向を制御し、 液晶層の光透過率を変えて画像を表示する。 なお第 7図に おいては、 18 (b) は一つの画素電極を示し、 18 (a) は縦方向 ( y方向、 列方向) に隣接する画素電極を示す。 17は各電極間を接続す るために各絶縁膜に開けられたコンタク トホールで、 17 (A) はドレ イン電極 9と半導体層 6、 17 (D) はソース電極 9と半導体層 6、 1 7 (B) はソース電極 9と配線層 12、 17 (C) は配線層 12と画素 電極 18を接続するコンタク トホールである。 21は TFT基板 27に 設けられた配向膜 (下側配向膜、 第 1配向膜) で、 ポリイミ ド等の有機 膜からなる。 下側配向膜 21は第 7図の符号 26に示す方向にラビング 処理が行われている。 23は液晶分子の様子を模式的に描いたものであ る。 24は TFT基板のラビング処理 26によって生じるチルト角であ る。 25は隣接する画素電極 18 (a) 、 18 (b) 間の横電界で生じ るリバースチルトである。 32はリバースチルトが発生している領域、 即ちリバースチルト ドメインである。 34は隣接する画素電極間の中心 線である。 28は共通電極基板 (対向基板、 第 2の基板) で、 ガラスや プラスチック等の透明な絶縁物からなる。 29は共通電極基板の遮光膜 (ブラックマトリックス) で、 C rや A 1等の遮光金属膜や、 C r 02 等の無機遮光膜や、 ァクリル等の樹脂に染料や顔料やカーボンなどを添 加した有機遮光膜からなり、 T FTのチャネル部分の半導体層 6を遮光 し、 T FTの ΐ呉動作を防止している。 30は絶縁膜 (第 8絶縁膜) で、 S i 02、 S i N、 T a205、 A L 203等の透明な絶縁膜からなり、 共通電極 31とブラックマトリックスの絶縁を行つたり、 ブラックマト リックスの中にある染料や顔料やカーボン等が液晶層の中に入るのを防 ぐ役目をする。 31は共通電極 (対向電極) で、 I TO等の透明導電膜 力、らなり、 画素電極 18と共に液晶層に縦電界を発生する役目を果たす 。 2 2は共通電極基板 2 8に設けられた配向膜 (上側配向膜、 第 2配向 膜) で、 ポリイミ ド等の有機膜からなる。 上側配向膜 2 2は第 7図の符 号 3 6に示す方向にラビング処理が行われている。 3 3は共通電極 3 1 に設けられた電極不在部である。 3 5は共通電極不在部の中心線である 。 共通電極 3 1は、 電極不在部 3 3により電気的に分断されないように 、 共通電極接続部 3 7により所々電気的に接続されている。 共通電極接 続部 3 7ではリバースチルト ドメインの幅を狭くする効果が少ないが、 本実施形態では各ドレイン線 9上に共通電極接続部 3 7を設けているの で、 リバースチルトドメインはドレイン線 9に隠れ、 光抜けの問題は起 こらない。 In addition, since the electrode absent portion 33 is not in the light transmitting region, the display image quality does not deteriorate. Next, details of the present embodiment shown in FIGS. 7 and 8 will be described. Reference numeral 27 in FIG. 8 denotes a pixel electrode substrate (TFT substrate, first substrate) made of a transparent insulator such as quartz glass or glass having a softening point of 1000 ° C. or less. 1 is a base film (first insulating film), S i 0 2, S i N, a transparent insulating film such as Ta 2 0 5, AL 2 0 3, an alkali component contained in the pixel electrode substrate is a liquid Akirachu (4) Provided to prevent leakage into the semiconductor layer of the thin film transistor. Reference numeral 2 denotes a first light-shielding film (backside light-shielding layer, TFT substrate light-shielding film), which comprises a light-shielding metal layer such as Cr, Al, Ta, and Mo, and a light-shielding insulating layer obtained by adding a dye or pigment to an insulating film. The semiconductor layer in the TFT channel is shielded from light to prevent TFT malfunction. 3 is a second insulating film, S i 0 2, S i N, with Ta 2 0 5, AL 2 0 3 transparent insulating film such as is provided with a TFT substrate light-shielding film 2 and the TFT for insulation . When the TFT substrate light-shielding film 2 is an insulating light-shielding film, the second insulating film 3 may not be provided. Reference numeral 4 denotes a first capacitor electrode (capacitor forming layer), which is formed of a metal layer such as Cr, A1, Ta, and Mo, and is one of the components of a storage capacitor 20 that holds the potential of the pixel electrode 18. The first capacitor electrode 4 also functions as a light-shielding film (second light-shielding film) of the TFT substrate 27, and also has a function of shielding the reverse tilt domain 32 and the common electrode absent portion 33 from light. 5 is a third insulation film, and functions as a dielectric of S i 0 2, S i N , T a 2 0 5, AL 2 03 like the transparent insulating film or Rannahli, storage capacitor 20. Reference numeral 6 denotes a semiconductor layer, which functions as a channel layer of the TFT 19 and one electrode (second capacitor electrode) of the storage capacitor 20. As a material of the semiconductor layer 6, there can be used a polysilicon formed by a low pressure CVD method, a polysilicon formed by irradiating an amorphous silicon film with a laser beam, or an amorphous silicon film formed by a plasma CVD method. Reference numeral 7 denotes a gate insulating film (fourth insulating film) made of SiO 2 , Si N, and the like, and functions as a dielectric of the storage capacitor 20 in addition to the gate insulating film of the TFT 19. 8 is a gate electrode layer, such as a polysilicon or metal layer. And a gate electrode of TFT 19, a gate wiring (scanning signal line), and the other electrode of the storage capacitor 20 (third capacitor electrode). Reference numeral 9 denotes a source / drain electrode layer, which is made of a metal layer such as Cr, A1, Ta, Mo, etc., and has a source electrode, a drain electrode, a video signal line (drain wiring), and a storage capacitor 20 of TFT 19. One electrode (the fourth capacitance electrode) is formed. Note that the relationship between the source electrode and the drain electrode of the TFT 19 originally changes depending on how voltage is applied, but in the following description, for convenience, the side connected to the video signal line is called the drain electrode, and the pixel electrode 1 The side connected to 8 will be referred to as the source electrode. 1 0 In the interlayer insulating film (the fifth insulating film), the S i 0 2, S i N , consists T a 2 0 5, AL 2 0 3 or the like transparent insulating film, the gate wiring 8 and the drain line 9 Acts as a dielectric for insulation and storage capacitance 20. 1 1 is an interlayer insulating film (the sixth insulating film), S i 0 2, S i N, consists T a 2 0 5, AL 2 0 3 or the like transparent insulating film, wiring layers 1 to be described later 2 and the drain electrode 9 and the gate wiring 8 are insulated. Reference numeral 12 denotes a wiring layer, which is formed of a conductive film such as Cr, AI, Ta, Mo, molybdenum silicide, and tungsten silicide, and electrically connects the source electrode 9 and the pixel electrode 18. The wiring layer 12 also functions as a light-shielding film (third light-shielding film) that shields the gap between the storage capacitor electrodes 4 and 9 and the gate wiring 8. Reference numeral 13 denotes an interlayer insulating film (seventh insulating film), which is made of SiO 2 , and insulates the pixel electrode 18 (a) of an adjacent pixel from the wiring layer 12. Reference numeral 14 also denotes an interlayer insulating film (eighth insulating film) made of SiN, and insulates the pixel electrode 18 (a) of the adjacent pixel from the wiring layer 12. Reference numeral 15 denotes a flattening film (a ninth insulating film), which is a transparent insulating resin such as polyimide-epoxy, a photosensitive transparent organic film such as a photoresist, or a relatively thick Si 0 2 The pixel electrode 18 is made of a transparent inorganic insulating film such as a film or a sine film, and the surface on which the pixel electrode 18 is formed is made flat so that the electric field generated by the pixel electrode 18 becomes a uniform vertical electric field. 18 is the pixel electrode, I TO (indium tin It is made of a transparent conductive film such as oxide), and controls the alignment direction by applying an electric field to the liquid crystal molecules 23 to change the light transmittance of the liquid crystal layer to display an image. In FIG. 7, 18 (b) shows one pixel electrode, and 18 (a) shows a pixel electrode adjacent in the vertical direction (y direction, column direction). Reference numeral 17 denotes a contact hole formed in each insulating film to connect between the electrodes. 17 (A) denotes the drain electrode 9 and the semiconductor layer 6, and 17 (D) denotes the source electrode 9 and the semiconductor layer 6, 1. 7 (B) is a contact hole connecting the source electrode 9 and the wiring layer 12, and 17 (C) is a contact hole connecting the wiring layer 12 and the pixel electrode 18. Reference numeral 21 denotes an alignment film (lower alignment film, first alignment film) provided on the TFT substrate 27, which is made of an organic film such as polyimide. The lower alignment film 21 is rubbed in the direction indicated by reference numeral 26 in FIG. Reference numeral 23 schematically depicts the state of the liquid crystal molecules. 24 is a tilt angle generated by the rubbing process 26 of the TFT substrate. Reference numeral 25 denotes a reverse tilt generated by a horizontal electric field between the adjacent pixel electrodes 18 (a) and 18 (b). Reference numeral 32 denotes an area where reverse tilt occurs, that is, a reverse tilt domain. 34 is a center line between adjacent pixel electrodes. Reference numeral 28 denotes a common electrode substrate (opposite substrate, second substrate) made of a transparent insulator such as glass or plastic. 29 is a light shielding film of the common electrode substrate (black matrix), hydrogenated and shielding metal film 1 such as C r and A, or an inorganic light-shielding film such as C r 0 2, and a resin dye or pigment or carbon such Akuriru It is made of an organic light-shielding film to which light is applied, and shields the semiconductor layer 6 in the channel portion of the TFT from light, thereby preventing TFT operation. 30 insulating film (8 insulating film), S i 0 2, S i N, T a 2 0 5, a transparent insulating film such as AL 2 0 3, line insulation of the common electrode 31 and the black matrix It functions to prevent dyes, pigments, carbon, etc. in black matrix from entering the liquid crystal layer. Reference numeral 31 denotes a common electrode (opposite electrode), which functions as a transparent conductive film such as an ITO and generates a vertical electric field in the liquid crystal layer together with the pixel electrode 18. . Reference numeral 22 denotes an alignment film (upper alignment film, second alignment film) provided on the common electrode substrate 28, which is made of an organic film such as polyimide. The upper alignment film 22 is rubbed in the direction indicated by reference numeral 36 in FIG. Reference numeral 33 denotes an electrode absent portion provided on the common electrode 31. Reference numeral 35 denotes the center line of the common electrode absence part. The common electrode 31 is electrically connected in some places by a common electrode connection part 37 so as not to be electrically disconnected by the electrode absence part 33. In the common electrode connection part 37, the effect of narrowing the width of the reverse tilt domain is small, but in this embodiment, since the common electrode connection part 37 is provided on each drain line 9, the reverse tilt domain is The problem of light leakage does not occur because it is hidden by 9.

第 7図で見ると本実施形態の平面構造は、 横方向 (X方向、 行方向 ) に延在する複数の走査信号線 8と、 縦方向 (y方向、 列方向) に延在 する複数の映像信号線 9の交差する部分に対応して、 薄膜トランジスタ 1 9と画素電極 1 8からなる画素が設けられる、 アクティブマトリック ス構成をしている。 一つの走査信号線 8と隣りの走査信号線 8の間には 、 走査信号線 8と同じ方向に延在する容量線 4、 8が設けられている。 容量線 4、 8は画素電極 1 8やソース電極 9と共に保持容量 2 0を形成 し、 画素電極 1 8に印加された表示電圧を一定期間保持する役目をする 。容量線 4、 8には、 外部回路から一定の電圧が印加されるカ、 一般に は共通電極 3 1と同等の電圧が印加される。 保持容量 2 0の縦構造は第 8図に示すように、 第 1容量電極 (容量線) 4、 第 3絶縁膜 5、 第 2容 量電極 (半導体層) 6、 第 4絶縁膜 (ゲート絶縁膜) 7、 第 3容量電極 (容量線) 8、 第 5絶縁膜 (層間絶縁膜) 1 0、 第 4容量電極 (ソース 電極) 9からなる多層構造をしている。 そして、 第 1容量電極 3及び第 3容量電極 8が容量線に接続し、 第 2容量電極 6及び第 4容量電極 9が 画素電極 1 8に接続することにより、 画素電極 1 8と容量線 4、 8との 間に多層容量素子が形成される。 本実施形態では保持容量を多層構造に することにより、 少ない面積で大きな静電容量を形成できるので、 各保 持容量電極 4、 6、 8、 9を小さく出来、 画素の開口率を向上すること が出来る。 特に、 液晶プロジェクタ等に使われる、 表示領域の対角の長 さが 5 . 0 8 c m以下 (2型以下) の液晶表示装置では、 画素電極の大 きさが極端に小さくなるので、 保持容量を多層構造にすることは、 明る い画像表示を得るために極めて有効である。 同様に、 小型ノートブック •パーソナルコンピュータ等に使われる、 表示領域の対角の長さが 2 7 . 9 4 c m以下 ( 1 1型以下) の液晶表示装置でも、 画素数が 1 0 2 4 X 3 X 7 6 8個以上の仕様 (X G A以上の仕様) の高精細の低温ポリシ リコン T F T液晶表示装置では、 画素電極の大きさが極端に小さくなる ので、 保持容量 2 0を多層構造にすることは、 液晶表示装置の画素数を 増やし精細度を上げるために特に有効である。 Referring to FIG. 7, the planar structure of this embodiment includes a plurality of scanning signal lines 8 extending in the horizontal direction (X direction, row direction) and a plurality of scanning signal lines 8 extending in the vertical direction (y direction, column direction). An active matrix configuration is provided in which a pixel including a thin film transistor 19 and a pixel electrode 18 is provided corresponding to a portion where the video signal line 9 intersects. Between one scanning signal line 8 and the adjacent scanning signal line 8, there are provided capacitance lines 4 and 8 extending in the same direction as the scanning signal line 8. The capacitor lines 4 and 8 form a storage capacitor 20 together with the pixel electrode 18 and the source electrode 9 and serve to hold the display voltage applied to the pixel electrode 18 for a certain period. A constant voltage is applied to the capacitance lines 4 and 8 from an external circuit, and in general, a voltage equivalent to that of the common electrode 31 is applied. As shown in Fig. 8, the vertical structure of the storage capacitor 20 is as follows: the first capacitance electrode (capacitance line) 4, the third insulation film 5, the second capacitance electrode (semiconductor layer) 6, the fourth insulation film (gate insulation). It has a multilayer structure consisting of a film 7, a third capacitor electrode (capacitance line) 8, a fifth insulating film (interlayer insulating film) 10, and a fourth capacitor electrode (source electrode) 9. Then, the first capacitance electrode 3 and the third capacitance electrode 8 are connected to the capacitance line, and the second capacitance electrode 6 and the fourth capacitance electrode 9 are connected to the pixel electrode 18 so that the pixel electrode 18 and the capacitance line 4 are connected. , With 8 A multilayer capacitive element is formed therebetween. In the present embodiment, since a large capacitance can be formed in a small area by forming the storage capacitor into a multilayer structure, each storage capacitor electrode 4, 6, 8, and 9 can be reduced, and the aperture ratio of the pixel can be improved. Can be done. In particular, in a liquid crystal display device used in liquid crystal projectors and the like, in which the diagonal length of the display area is 5.08 cm or less (2 inches or less), the size of the pixel electrode becomes extremely small, so the storage capacitance is reduced. The use of a multi-layer structure is extremely effective for obtaining a bright image display. Similarly, a liquid crystal display device with a diagonal display area of 27.94 cm or less (11-inch or less) used in small notebooks and personal computers has a pixel count of 102 4 X In a high-definition low-temperature polysilicon TFT liquid crystal display device with a specification of 3 X 768 or more (XGA or more), the size of the pixel electrode becomes extremely small. Is particularly effective for increasing the number of pixels of the liquid crystal display device and increasing the definition.

また本実施形態では、 第 7図に示すように、 リバースチルト ドメイ ンを隠すために、 保持容量 2 0を走査信号線 8の近くに寄せている。 第 7図に示す本実施形態では、 T F T基板側のラビング方向 2 6は走査信 号線 8の中心線に対して 4 5度左下の方向を向いている。 従って第 6図 ( D ) に示すように、 画素電極間中心 3 4に対して下側の画素電極 1 8 ( b ) の端部にリバースチルト ドメイン 3 2が発生する。 従って走査信 号線 8の下側近傍の画素電極 1 8 ( a ) の端部に保持容量素子 2 0を設 けることにより、 容量電極 4、 9が遮光膜の機能を果たしリバースチル トドメイン 3 2を隠してくれるので、 光抜けの問題は起こらない。  In this embodiment, as shown in FIG. 7, the storage capacitor 20 is moved near the scanning signal line 8 in order to hide the reverse tilt domain. In the present embodiment shown in FIG. 7, the rubbing direction 26 on the TFT substrate side is directed 45 degrees to the lower left with respect to the center line of the scanning signal line 8. Therefore, as shown in FIG. 6 (D), a reverse tilt domain 32 is generated at the end of the pixel electrode 18 (b) below the center 34 between the pixel electrodes. Therefore, by providing the storage capacitance element 20 at the end of the pixel electrode 18 (a) near the lower side of the scanning signal line 8, the capacitance electrodes 4 and 9 function as a light shielding film and the reverse tilt domain 3 2 The problem of light leakage does not occur.

さらに本実施形態では、 共通電極 3 1に走査信号線 8に沿って設け られた、 細長いスリッ ト状の電極不在部 3 3を画素電極中心 3 4よりも 下側、 即ち T F T基板側のラビング方向、 に設けているのでリバースチ ノレトドメイン 3 2を小さくすることが出来、 リバースチルトドメイン 3 2を容量電極 4、 9が設けられた領域内に閉じ込めることが出来るので 、 容量電極 4、 9の面積を必要以上に大きくする必要が無く、 開口率が さらに向上する。 Further, in the present embodiment, the elongated slit-shaped electrode-free portion 33 provided on the common electrode 31 along the scanning signal line 8 is located below the pixel electrode center 34, that is, the rubbing direction on the TFT substrate side. Since the reverse tilt domain 3 2 can be made smaller, the reverse tilt domain 3 Since 2 can be confined in the region where the capacitor electrodes 4 and 9 are provided, it is not necessary to increase the area of the capacitor electrodes 4 and 9 more than necessary, and the aperture ratio is further improved.

また、 本実施形態では電極不在部 3 3を容量電極 4の存在する領域 内に設けているので、 電極不在部 3 3が目立たず、 表示画質を低下する こともない。  Further, in the present embodiment, since the electrode absent portion 33 is provided in the region where the capacitor electrode 4 exists, the electrode absent portion 33 is not conspicuous and the display image quality is not degraded.

さらに本実施形態では遮光金属層からなる配線層 1 2により、 容量 電極 4、 9と走査信号線 8及び T F T基板遮光膜 2の間の隙間を遮光し ているので、 その間で光抜けが起こることがなくコントラストが向上す る。 また本実施形態では配線層 1 2によってもリバースチルトドメイン 3 2及び画素電極不在部 3 3を遮光している。  Further, in the present embodiment, the gap between the capacitance electrodes 4 and 9, the scanning signal line 8, and the TFT substrate light-shielding film 2 is shielded by the wiring layer 12 made of the light-shielding metal layer, so that light leakage occurs between them. The contrast is improved without any. In the present embodiment, the reverse tilt domain 32 and the pixel electrode absent portion 33 are also shielded from light by the wiring layer 12.

さらに第 7図に示す本実施形態では、 第 6図 (D ) に示したように 、 T F T基板側のラビング方向 2 6を走査信号線 8の中心線に対して 4 5度左下に設け、 共通電極基板側のラビング方向 3 6 (但し液晶表示装 置の共通電極基板 2 8の上から見たラビング方向) を 4 5度右下に設け ているので、 第 6図 (D ) に示したように、 リバースチルトドメインの 幅が最も少なくなり、 開口率がさらに向上する。  Further, in the present embodiment shown in FIG. 7, as shown in FIG. 6 (D), the rubbing direction 26 on the TFT substrate side is provided 45 degrees to the lower left with respect to the center line of the scanning signal line 8, and The rubbing direction 36 on the electrode substrate side (the rubbing direction as viewed from above the common electrode substrate 28 of the liquid crystal display device) is provided 45 degrees to the lower right, so as shown in Fig. 6 (D). In addition, the width of the reverse tilt domain is minimized, and the aperture ratio is further improved.

なお第 7図に示す 2 6、 3 2の方向でラビングを行うと、 行方向 ( X方向、 横方向) に隣接する画素電極 1 8間にリバースチルトドメイン が発生しやすいが、 本実施形態では第 1 4図で説明したライン反転駆動 方式を行っているので、 行方向に隣接する画素電極 1 8同志は同じ極性 になるので、 行方向に隣接する画素電極 1 8間に発生する横電界成分は 弱く、 画素電極 1 8の行方向の端部にはリバースチルト ドメインは発生 しない。  If rubbing is performed in the directions 26 and 32 shown in FIG. 7, a reverse tilt domain is likely to be generated between the pixel electrodes 18 adjacent in the row direction (the X direction and the horizontal direction). Since the line inversion driving method described with reference to FIG. 14 is used, the pixel electrodes 18 adjacent in the row direction have the same polarity, so the horizontal electric field component generated between the pixel electrodes 18 adjacent in the row direction. Is weak, and no reverse tilt domain occurs at the end of the pixel electrode 18 in the row direction.

また本実施形態では、 第 7図及び第 8図に示すように、 T F Tのチ ャネル部の半導体層 6をドレイン信号線 9により遮光しているので T F Tが外部光により誤動作することがない。 In the present embodiment, as shown in FIGS. 7 and 8, the semiconductor layer 6 in the channel portion of the TFT is shielded from light by the drain signal line 9, so that the TF T does not malfunction due to external light.

なお本実施形態では、 走査信号線 8と容量線 4、 8を分離して設け る構成の、 蓄積容量タイプの液晶表示装置を例に説明しているが、 本発 明は蓄積容量タイプの液晶表示装置に限定されるものではなく、 隣接す る画素の走査信号線 8と容量線 4、 8を一体に形成する、 付加容量タイ プの液晶表示装置に適用することが出来る。 付加容量タイプの液晶表示 装置は、 隣接する画素の走査信号線 8を容量線 4、 8と兼用するため、 画素の開口率をさらに向上することができる。 しかし付加容量タイプの 液晶表示装置は、 走査信号線 8に保持容量 2 0が接続するため、 走査信 号線 8を駆動するドライバの負荷が重くなるというデメリッ 卜があり、 走査信号線 8を高速で駆動する必要のある、 走査線数が多い高精細の液 晶表示装置には蓄積容量夕ィプの方が有利である。  In the present embodiment, a storage capacitor type liquid crystal display device having a configuration in which the scanning signal line 8 and the capacitor lines 4 and 8 are provided separately is described as an example, but the present invention is directed to a storage capacitor type liquid crystal display device. The present invention is not limited to the display device, and can be applied to an additional capacitance type liquid crystal display device in which the scanning signal lines 8 of adjacent pixels and the capacitance lines 4 and 8 are integrally formed. In the additional capacitance type liquid crystal display device, since the scanning signal line 8 of the adjacent pixel is also used as the capacitance lines 4 and 8, the aperture ratio of the pixel can be further improved. However, the additional capacitance type liquid crystal display device has a disadvantage that the load of a driver for driving the scanning signal line 8 becomes heavy because the storage capacitor 20 is connected to the scanning signal line 8, and the scanning signal line 8 can be operated at high speed. The storage capacitor type is more advantageous for a high-definition liquid crystal display device that needs to be driven and has a large number of scanning lines.

ライン反転駆動方式の液晶表示装置に本発明を適用した本実施形態 は、 寄生容量を介して映像信号線 9から画素電極 1 8に飛び込む雑音成 分が、 映像信号の極性反転により相殺されるので、 異なる列の画素間で 均一な画像表示が得られる。  In the present embodiment in which the present invention is applied to the line inversion driving type liquid crystal display device, the noise component jumping into the pixel electrode 18 from the video signal line 9 via the parasitic capacitance is canceled by the polarity inversion of the video signal. A uniform image display can be obtained between pixels in different columns.

また本実施形態では液晶層自発螺旋ピッチを液晶層の厚さの 6倍乃 至 1 0倍に当たる 2 0〃m程度のものを使用しているので、 従来の液晶 層の厚さの 1 2倍乃至 1 5倍に当たる 6 0〃m程度のものを使用した場 合に比べて、 リバースチルト ドメインの幅を 0 . 8 ^ 10程度低減するこ とができる。  In the present embodiment, the spontaneous spiral pitch of the liquid crystal layer is about 20 程度 m, which is 6 to 10 times the thickness of the liquid crystal layer. The width of the reverse tilt domain can be reduced by about 0.8 ^ 10 as compared with the case of using about 60〃m, which is equivalent to about 15 times.

さらに第 7図に示す本実施形態では、 画素電極 1 8と配線 1 2を接 続する、 コンタクト穴 1 7 ( C ) を画素電極 1 8のエッジから離して設 けているので、 コンタク ト穴 1 7 ( C ) 近傍の横電界が弱くなり、 コン タク ト穴 1 7 ( C ) 近傍に発生するリバースチルトドメンを小さくする ことが出来る。 さらに詳しく説明すると、 第 8図に示すように、 平坦化 膜 15に開けられたコンタク ト穴 17 (C) 上の画素電極 18の断面形 状は、 他の部分に比べて平坦ではなく深く落ち込んでいる。 従ってコン タク ト穴 17 (C) 上の液晶分子は共通電極 31からの距離が遠くなり 、 横電界の影響を受け易くなり、 23 aに示すようにリバースチルトを 生じ易い。 しかしコンタク ト穴 17 (C) と画素電極 18のエッジの間 の距離を十分に取り、 コンタク ト穴 17 (C) と画素電極 18の端面の 間に画素電極 18の平坦部を設けることにより、 画素電極 18の平坦部 は共通電極 31に近く縦電界が強いので、 横電界がコンタク ト穴 17 ( C) に届く前に弱めることが出来、 コンタク ト穴 17 (C) 近傍のリバ ースチルトドメインを小さくすることが出来る。 Further, in the present embodiment shown in FIG. 7, the contact hole 17 (C) for connecting the pixel electrode 18 to the wiring 12 is provided apart from the edge of the pixel electrode 18, so that the contact hole The transverse electric field near 17 (C) is weakened, and the reverse tilt domain that occurs near the contact hole 17 (C) can be reduced. More specifically, as shown in Fig. 8, The cross-sectional shape of the pixel electrode 18 on the contact hole 17 (C) formed in the film 15 is not flat but deeper than other portions. Therefore, the liquid crystal molecules on the contact hole 17 (C) are far from the common electrode 31 and are susceptible to the lateral electric field, and are liable to cause reverse tilt as shown at 23a. However, by providing a sufficient distance between the contact hole 17 (C) and the edge of the pixel electrode 18 and providing a flat portion of the pixel electrode 18 between the contact hole 17 (C) and the end face of the pixel electrode 18, Since the vertical portion of the pixel electrode 18 is close to the common electrode 31 and has a strong vertical electric field, the horizontal electric field can be weakened before reaching the contact hole 17 (C), and the reverse tilt near the contact hole 17 (C) can be reduced. Domains can be made smaller.

実施形態 2.  Embodiment 2.

本実施形態は、 第 9図に示すように、 各列毎に画素電極 1 8 (a) 、 18 (b) の極性を反転させて液晶表示装置を駆動する、 列毎反転駆 動方式の液晶表示装置に本発明を適用した場合の実施形態である。  In this embodiment, as shown in FIG. 9, a column-by-column inversion drive type liquid crystal in which the polarity of the pixel electrodes 18 (a) and 18 (b) is inverted for each column to drive the liquid crystal display device. It is an embodiment when the present invention is applied to a display device.

第 1 0図は本発明の実施形態 2における液晶表示装置の画素部分の 平面図である。 各符号は、 先に第 1の実施形態で説明した、 第 7図の符 号と同じである。  FIG. 10 is a plan view of a pixel portion of a liquid crystal display device according to Embodiment 2 of the present invention. The reference numerals are the same as those in FIG. 7 described in the first embodiment.

本実施形態では、 共通電極 3 1に設けられる電極不在部分 33が、 映像信号線 9に沿ったスリッ ト状に設けられていることが特徴である。 本実施形態では、 T FT基板側のラビング方向 26は走査信号線 8 の中心線に対して 45度右下の方向を向き、 共通電極基板側のラビング 方向 36は 45度右上の方向を向いている。 従って第 6図 (D) を 90 度反時計回りに回転した形となり、 画素電極間中心 34に対して右側の 画素電極 18 (b) の端部にリバースチルトドメイン 32が発生する。 従って本実施形態では共通電極不在部の中心 35を、 画素電極間中心 3 4よりもリバースチルト ドメインが発生する側、 即ち右側にずらすこと により、 リバースチルトドメンを画素電極中心 3 4側に寄せている。 なお本実施形態ではリバースチルト ドメンを共通電極基板 2 8に設 けたブラックマトリックス 2 9で遮光している。 The present embodiment is characterized in that the electrode absent portion 33 provided on the common electrode 31 is provided in a slit shape along the video signal line 9. In the present embodiment, the rubbing direction 26 on the TFT substrate side is directed to the lower right direction by 45 degrees with respect to the center line of the scanning signal line 8, and the rubbing direction 36 on the common electrode substrate side is directed to the upper right direction by 45 degrees. I have. Accordingly, FIG. 6 (D) is rotated counterclockwise by 90 degrees, and a reverse tilt domain 32 is generated at the end of the pixel electrode 18 (b) on the right side with respect to the center 34 between the pixel electrodes. Therefore, in the present embodiment, the center 35 of the common electrode absence part is shifted to the side where the reverse tilt domain occurs, that is, to the right side, from the center 34 between the pixel electrodes. As a result, the reverse tilt domain is moved toward the pixel electrode center 34 side. In this embodiment, the reverse tilt domain is shielded from light by the black matrix 29 provided on the common electrode substrate 28.

従って本実施形態によれば、 ブラックマトリックス 2 9で遮光する 領域が少なくて済むので、 開口率が向上する。  Therefore, according to the present embodiment, the area to be shielded by the black matrix 29 can be reduced, so that the aperture ratio is improved.

また本実施形態ではブラックマトリ ックス 2 9により共通電極不在 部 3 3を遮光しているので、 共通電極不在部 3 3が目立たず、 表示画質 が向上する。 なお本実施形態では、 容量素子 2 0を映像信号線 9に沿つ て設け、 映像信号線 9に沿って発生するリバースチルト ドメインを容量 素子 2 0で遮光しても良い。  Further, in the present embodiment, the black matrix 29 shields the common electrode absent portion 33 from light, so that the common electrode absent portion 33 is inconspicuous and the display quality is improved. In the present embodiment, the capacitor 20 may be provided along the video signal line 9, and the reverse tilt domain generated along the video signal line 9 may be shielded by the capacitor 20.

また本実施形態では、 共通電極 3 1には映像信号線に沿ってスリ ッ ト 3 3を設けているので、 共通電極 3 1間を電気的に接続する接続部 3 7は走査信号線 8上に設けている。  Further, in the present embodiment, since the slit 33 is provided along the video signal line on the common electrode 31, the connecting portion 37 electrically connecting the common electrode 31 is provided on the scanning signal line 8. Is provided.

さらに本実施形態では、 第 6図 (D ) で説明したように、 リバース チルトドメィンの幅が最も小さくなるので、 ブラックマトリックス 2 9 で遮光する領域はさらに小さくなり、 開口率が向上し、 最も明るい画像 表示が得られる。  Further, in the present embodiment, as described in FIG. 6 (D), since the width of the reverse tilt domain is the smallest, the area to be shielded by the black matrix 29 is further reduced, the aperture ratio is improved, and the brightest image is obtained. The display is obtained.

列毎反転駆動方式の液晶表示装置に本発明を適用した本実施形態は 、 寄生容量を介して走査信号線 8から画素電極 1 8に飛び込む雑音成分 カ 、 画素電極 1 8の極性反転により相殺されるので、 異なる行の画素間 で均一な画像表示が得られる。  In the present embodiment in which the present invention is applied to the column-by-column inversion driving type liquid crystal display device, the noise component jumping into the pixel electrode 18 from the scanning signal line 8 via the parasitic capacitance is offset by the polarity inversion of the pixel electrode 18. Therefore, uniform image display can be obtained between pixels in different rows.

また本実施形態でも液晶層の自発螺旋ピッチを液晶層の厚さの 6倍 乃至 1 0倍に当たる 2 0〃m程度のものを使用しているので、 従来の液 晶層の厚さの 1 2倍乃至 1 5倍に当たる 6 0 /z m程度のものを使用した 場合に比べて、 リバースチルトドメインの幅を 0 . 程度低減する ことができる。 さらに本実施形態も第 1 0図に示す様に、 画素電極 1 8と配線 12 を接続する、 コンタク ト穴 17 (C) を画素電極 18のエッジから離し て設けているので、 コンタク ト穴 11 (C) 近傍の横電界が弱くなり、 コンタク ト穴 17 (C) 近傍に発生するリバースチルトドメンを小さく することが出来る。 Also in the present embodiment, the spontaneous spiral pitch of the liquid crystal layer is about 20 2m, which is 6 to 10 times the thickness of the liquid crystal layer. The width of the reverse tilt domain can be reduced by about 0.1 as compared with the case of using about 60 / zm which is twice to 15 times. Further, in the present embodiment, as shown in FIG. 10, the contact hole 17 (C) for connecting the pixel electrode 18 to the wiring 12 is provided away from the edge of the pixel electrode 18, so that the contact hole 11 (C) is provided. The transverse electric field near (C) is weakened, and the reverse tilt domain generated near contact hole 17 (C) can be reduced.

以上に説明した以外の構成は、 先に説明した実施形態 1と同じであ る。  The configuration other than that described above is the same as that of the first embodiment described above.

実施形態 3.  Embodiment 3.

本実施形態は、 第 1 1図に示すように、 各行毎に画素電極 1 8 (a ) 、 18 (b) の極性を反転させて、 さらに各列毎に画素電極 18 (b ) 、 18 (c) の極性を反転させて液晶表示装置を駆動する、 いわゆる ドッ ト反転駆動方式の液晶表示装置に本発明を適用した場合の実施形態 である。  In the present embodiment, as shown in FIG. 11, the polarity of the pixel electrodes 18 (a) and 18 (b) is inverted for each row, and the pixel electrodes 18 (b) and 18 ( This is an embodiment in which the present invention is applied to a so-called dot inversion drive type liquid crystal display device in which the polarity of c) is inverted to drive the liquid crystal display device.

第 1 2図は本発明の実施形態 3における液晶表示装置の画素部分の 平面図である。 各符号は、 先に実施形態 1で説明した、 第 7図の符号と 同じである。  FIG. 12 is a plan view of a pixel portion of a liquid crystal display device according to Embodiment 3 of the present invention. The reference numerals are the same as those in FIG. 7 described in the first embodiment.

本実施形態では、 共通電極 3 1に走査信号線 8に沿ったスリ ッ ト状 の電極不在部分 33 (a) と、 映像信号線 9に沿ったスリッ ト状の電極 不在部分 33 (b) を設けたことが特徴である。  In the present embodiment, the common electrode 31 is provided with a slit-shaped electrode absent portion 33 (a) along the scanning signal line 8 and a video signal line 9 with a slit-shaped electrode absent portion 33 (b). The feature is that it is provided.

本実施形態では、 T FT基板側のラビング方向 26は走査信号線 8 の中心線に対して 45度右下の方向 (遮光膜 4を設けた方向) を向き、 共通電極基板側のラビング方向 36は 45度右上の方向 (走査信号線 8 の中心線に対して遮光膜 4を設けていない方向) を向いている。 従って 列方向に隣り合う画素電極間中心 34に対しては、 第 6図 (B) と同じ 形となり、 画素電極間中心 34に対して下側の画素電極 18 (b) の端 部にリバースチルトドメイン 32が発生する。 従って本実施形態では行 方向に延在する共通電極不在部の中心 3 5を、 画素電極間中心 3 4より もリバースチルトドメインが発生する側、 即ち下側にずらすことにより 、 リバースチルトドメインを画素電極中心 3 4側に寄せている。 In the present embodiment, the rubbing direction 26 on the TFT substrate side is directed to the lower right direction (direction in which the light shielding film 4 is provided) by 45 degrees with respect to the center line of the scanning signal line 8, and the rubbing direction 36 on the common electrode substrate side. Is directed to the upper right direction by 45 degrees (the direction in which the light shielding film 4 is not provided with respect to the center line of the scanning signal line 8). Accordingly, the center 34 between the pixel electrodes adjacent in the column direction has the same shape as that shown in FIG. 6 (B), and the reverse tilt is applied to the end of the pixel electrode 18 (b) below the center 34 between the pixel electrodes. Domain 32 occurs. Therefore, in this embodiment, By shifting the center 35 of the common electrode absent portion extending in the direction to the side where the reverse tilt domain occurs, that is, to the lower side than the center 34 between the pixel electrodes, the reverse tilt domain is shifted to the pixel electrode center 34 side. It is approaching.

本実施形態でも、 走査信号線 8に対しリバースチルト ドメインが発 生する側に容量素子 2 0を設け、 リバースチルトドメインを遮光してい る o  Also in the present embodiment, the capacitive element 20 is provided on the scanning signal line 8 on the side where the reverse tilt domain occurs, and the reverse tilt domain is shielded from light.

さらに本実施形態では行方向に隣り合う画素電極間中心 3 4 ' に対 しては、 第 6図 (D ) を反時計回りに 9 0度回転したのと同じ形となり 、 画素電極間中心 3 4 ' に対して右側の画素電極 1 8 ( b ) の端部にリ バースチルトドメイン 3 2が発生する。 従って本実施形態では列方向に 延在する共通電極不在部の中心 3 5 ' を、 画素電極間中心 3 4 ' よりも リバースチルトドメインが発生する側、 即ち右側にずらすことにより、 リバースチルトドメインを画素電極中心 3 4, 側に寄せている。  Further, in the present embodiment, the center 34 4 ′ between the pixel electrodes adjacent in the row direction has the same shape as that of FIG. 6D rotated 90 degrees counterclockwise. A reverse tilt domain 32 is generated at the end of the pixel electrode 18 (b) on the right side with respect to 4 ′. Therefore, in the present embodiment, the center 35 'of the common electrode absence part extending in the column direction is shifted to the side where the reverse tilt domain occurs, that is, to the right side, from the center 34' between the pixel electrodes, so that the reverse tilt domain is shifted. It is close to the pixel electrode center 34, side.

本実施形態では、 画素電極 1 8 ( b ) の映像信号線 9に沿った端部 に発生したリバースチルトドメインを、 映像信号線 9に沿って延在する ブラックマトリックス 2 9で遮光している。 なお本実施形態では、 容量 素子 2 0を映像信号線 9に沿って設け、 映像信号線 9に沿って発生する リバースチルト ドメインを容量素子 2 0で遮光しても良い。  In the present embodiment, the reverse tilt domain generated at the end of the pixel electrode 18 (b) along the video signal line 9 is shielded from light by a black matrix 29 extending along the video signal line 9. In the present embodiment, the capacitor 20 may be provided along the video signal line 9, and the reverse tilt domain generated along the video signal line 9 may be shielded by the capacitor 20.

従って本実施形態によれば、 容量素子 2 0やブラックマトリックス 2 9でリバースチルトドメインを遮光する領域が少なくて済むので、 開 口率が向上する。  Therefore, according to the present embodiment, the area for shielding the reverse tilt domain with the capacitive element 20 and the black matrix 29 can be reduced, and the aperture ratio is improved.

また本実施形態では容量素子 2 0やブラックマトリックス 2 9によ り共通電極不在部 3 3 ( a ) 、 3 3 ( b ) を遮光しているので、 共通電 極不在部が目立たず、 表示画質が向上する。  Further, in the present embodiment, since the common electrode non-existing portions 3 3 (a) and 33 (b) are shielded from light by the capacitive element 20 and the black matrix 29, the common electrode non-existing portions are inconspicuous, and the display image quality is reduced. Is improved.

また本実施形態では、 共通電極 3 1には走査信号線 8及び映像信号 線に 9沿ってスリッ ト 3 3 ( a ) 、 3 3 ( b ) を設けているので、 共通 電極 3 1間を電気的に接続する接続部 3 7は走査信号線 8上及び映像信 号線上に設けている。 Also, in the present embodiment, the slits 33 (a) and 33 (b) are provided along the scanning signal line 8 and the video signal line 9 on the common electrode 31. A connection portion 37 for electrically connecting the electrodes 31 is provided on the scanning signal line 8 and the video signal line.

さらに本実施形態では、 第 6図 (D ) で説明したように、 映像信号 線 9に沿って発生するリバースチルトドメインの幅が最も小さくなるの で、 ブラックマトリックス 2 9で遮光する領域はさらに小さくなり、 開 口率が向上し、 最も明るい画像表示が得られる。  Further, in the present embodiment, as described with reference to FIG. 6 (D), the width of the reverse tilt domain generated along the video signal line 9 is the smallest, so that the area shielded by the black matrix 29 is smaller. The aperture ratio is improved, and the brightest image display is obtained.

なお本実施形態では、 走査信号線 8に沿って発生するリバースチル トドメィンの幅は最小にはならないが、 一般に走査信号線 8間の間隔よ りも映像信号線 9間の間隔の方が狭くなるので (例えばカラーの画素で は、 行方向に R、 G、 Bの画素を並べて、 1画素とする。 ) 、 映像信号 線 9に沿って発生するリバースチルトドメインの幅を最小にする方が、 液晶表示装置の精細度を高くすることができる。  In the present embodiment, the width of the reverse tilt domain generated along the scanning signal line 8 is not minimum, but generally, the interval between the video signal lines 9 is narrower than the interval between the scanning signal lines 8. (For example, in the case of color pixels, R, G, and B pixels are arranged in the row direction to make one pixel.) Therefore, it is better to minimize the width of the reverse tilt domain generated along the video signal line 9. The definition of the liquid crystal display device can be increased.

ドッ ト反転駆動方式の液晶表示装置に本発明を適用した本実施形態 は、 映像信号線 9と画素電極 1 8の寄生容量を介して映像信号線 9から 画素電極 1 8に飛び込む雑音成分が、 映像信号の極性反転により相殺さ れ、 さらに走査信号線 8と画素電極 1 8の寄生容量を介して走査信号線 In the present embodiment in which the present invention is applied to the dot inversion driving type liquid crystal display device, the noise component that jumps from the video signal line 9 to the pixel electrode 18 through the parasitic capacitance of the video signal line 9 and the pixel electrode 18 is: The signal is canceled by the reversal of the polarity of the video signal.

8から画素電極 1 8に飛び込む雑音成分が、 画素電極 1 8の極性反転に より相殺されるので、 異なる行及び列の画素間で均一な画像表示が得ら れ、 表示画像の均一性では最も優れている。 The noise component that jumps into the pixel electrode 18 from 8 is canceled by the polarity inversion of the pixel electrode 18, so that a uniform image display can be obtained between pixels in different rows and columns, and the most uniform display image can be obtained. Are better.

しかし、 画素の大きさが極めて小さい、 2型以下の液晶表示装置で は、 先に説明した実施形態 1の方が、 映像信号線 9に沿ったリバースチ ノレトドメインが発生しないので、 映像信号線 9の間隔を最も小さくする ことが出来、 有利である。  However, in a liquid crystal display device having a very small pixel size of 2 inches or less, the first embodiment described above does not generate a reverse chinoreto domain along the video signal line 9, so that the video signal line 9 This is advantageous because the distance between the two can be minimized.

また本実施形態でも液晶層の自発螺旋ピッチを液晶層の厚さの 6倍 乃至 1 0倍に当たる 2 0〃m程度のものを使用しているので、 従来の液 晶層の厚さの 1 2倍乃至 1 5倍に当たる 6 0 m程度のものを使用した 場合に比べて、 リバースチルトドメインの幅を 0 . 程度低減する ことができる。 Also in the present embodiment, the spontaneous spiral pitch of the liquid crystal layer is about 20 2m, which is 6 to 10 times the thickness of the liquid crystal layer. Use of about 60 m, which is double to 15 times Compared with the case, the width of the reverse tilt domain can be reduced by about 0.1.

さらに本実施形態も第 1 2図に示す様に、 画素電極 1 8と配線 1 2 を接続する、 コンタク ト穴 1 7 ( C ) を画素電極 1 8のエッジから離し て設けているので、 コンタク ト穴 1 7 ( C ) 近傍の横電界が弱くなり、 コンタク ト穴 1 7 ( C ) 近傍に発生するリバースチルトドメンを小さく することが出来る。  Further, in the present embodiment, as shown in FIG. 12, the contact hole 17 (C) for connecting the pixel electrode 18 to the wiring 12 is provided away from the edge of the pixel electrode 18, so that the contact The transverse electric field near the contact hole 17 (C) is weakened, and the reverse tilt domain generated near the contact hole 17 (C) can be reduced.

以上に説明した以外の構成は、 先に説明した実施形態 1と同じであ る。  The configuration other than that described above is the same as that of the first embodiment described above.

[産業上の利用可能性]  [Industrial applicability]

本発明は、 液晶表示装置の画素電極の端部に発生するリバースチル トドメインの幅を小さく し、 光抜けを防止して表示コントラストを向上 し、 リバースチルトドメインの遮光幅を小さく して開口率を向上し、 明 る 、表示画像が得られるという、 実用可能性のあるものである。  The present invention reduces the width of a reverse tilt domain generated at the edge of a pixel electrode of a liquid crystal display device, prevents light leakage, improves display contrast, and reduces the light blocking width of the reverse tilt domain to increase the aperture ratio. It is possible to improve the brightness and obtain a display image, which is a practical possibility.

Claims

請求の範囲 The scope of the claims 1 . 透明な絶縁物から成る第 1の基板上に間隔を置いて設けられる 第 1及び第 2電極と、 該第 1第 2電極上に設けられ第 1方向に向けてラ ビング処理がなされた第 1配向膜と、 透明な絶縁物からなる第 2の基板 上に設けられる共通電極と、 該共通電極上に設けられ上記第 1の方向と 異なる第 2方向に向けラビング処理がなされた第 2配向膜とを有し、 上記第 1及び第 2電極と、 上記共通電極は液晶層を介して対向し、 上記第 1及び第 2電極の間隔に対応して、 上記共通電極に電極不在部を 設け、 上記電極不在部の中心を上記第 1及び第 2電極の間隔の中心より も第 1配向膜のラビング方向にずらしたことを特徴とする液晶表示装置  1. First and second electrodes provided at intervals on a first substrate made of a transparent insulator, and rubbed in a first direction provided on the first and second electrodes. A first alignment film, a common electrode provided on a second substrate made of a transparent insulator, and a second electrode provided on the common electrode and subjected to a rubbing process in a second direction different from the first direction. An alignment film, wherein the first and second electrodes and the common electrode face each other with a liquid crystal layer interposed therebetween, and an electrode-free portion is provided on the common electrode corresponding to a distance between the first and second electrodes. A liquid crystal display device, wherein the center of the electrode-absent portion is shifted in the rubbing direction of the first alignment film from the center of the interval between the first and second electrodes. 2 . 上記第 1の基板或いは第 2の基板又はその両方に、 上記共通電 極不在部を覆う遮光膜を設けたことを特徴とする請求項 1に記載の液晶 2. The liquid crystal according to claim 1, wherein a light-shielding film is provided on the first substrate, the second substrate, or both of them, so as to cover the portion where the common electrode is absent. 3 . 上記第 1及び第 2電極にはそれぞれ、 上記第 1及び第 2電極に 電気的に接続される保持容量素子が設けられ、 該保持容量素子の電極の 少なくとも 1つは遮光性の導電膜からなり、 上記保持容量素子により上 記共通電極不在部を遮光したことを特徴とする請求項 1に記載の液晶表 不装置。 3. The first and second electrodes are each provided with a storage capacitor electrically connected to the first and second electrodes, and at least one of the electrodes of the storage capacitor is a light-shielding conductive film. 2. The liquid crystal display device according to claim 1, wherein the non-existent portion of the common electrode is shielded from light by the storage capacitor. 4 . 上記液晶層はッイストネマチック型の液晶からなり、 上記液晶 層の自発螺旋ピッチは、 上記液晶層の厚さの 6倍から 1 0倍に設定した ことを特徴とする請求項 1に記載の液晶表示装置。  4. The liquid crystal layer according to claim 1, wherein the liquid crystal layer is made of a twisted nematic liquid crystal, and a spontaneous spiral pitch of the liquid crystal layer is set to 6 to 10 times a thickness of the liquid crystal layer. Liquid crystal display device. 5 . 上記第 1及び第 2電極にはそれぞれ、 上記第 1及び第 2電極を 選択するためのスイッチング素子が、 絶縁層を介して設けられ、 該絶縁 層には上記第 1及び第 2電極とそれぞれのスィツチング素子を接続する ためのコンタクト穴が設けられ、 上記第 1及び第 2電極の上記コンタク ト穴に対応する部分と、 上記第 1及び第 2電極の電極端の間には、 それ ぞれ必ず上記第 1及び第 2電極が平坦な部分を設けることを特徴とする 請求項 1に記載の液晶表示装置。 5. A switching element for selecting the first and second electrodes is provided on each of the first and second electrodes via an insulating layer, and the first and second electrodes are connected to the first and second electrodes via the insulating layer. Contact holes for connecting the respective switching elements are provided, and the contact holes of the first and second electrodes are provided. The flat portion where the first and second electrodes are always provided between the portion corresponding to the through hole and the electrode end of the first and second electrodes, respectively. Liquid crystal display device. 6 . 絶縁物から成る第 1の基板上に行方向に延在する複数の走査信 号線と、 列方向に延在する複数の映像信号線を設け、 上記走査信号線と 映像信号線の交差する部分に対応して画素電極と薄膜トランジスタから なる複数の画素を有し、 上記第 1の基板は第 1の方向にラビング処理を 施し、 絶縁物から成る第 2の基板上に共通電極を設け、 上記第 2の基板 は第 2の方向にラビング処理を施し、 上記第 1の基板と第 2の基板は液 晶層を介して対向して設けられ、  6. A plurality of scanning signal lines extending in a row direction and a plurality of video signal lines extending in a column direction are provided on a first substrate made of an insulator, and the scanning signal lines intersect with the video signal lines. A plurality of pixels comprising a pixel electrode and a thin film transistor corresponding to the portion, the first substrate being subjected to a rubbing treatment in a first direction, a common electrode being provided on a second substrate made of an insulator, The second substrate is subjected to a rubbing treatment in a second direction, and the first substrate and the second substrate are provided to face each other with a liquid crystal layer interposed therebetween, 一つの行の画素電極と隣りの行の画素電極は、 上記共通電極を基準 に、 異なる極性の表示電圧が印加され、  Display voltages of different polarities are applied to the pixel electrode of one row and the pixel electrode of the next row based on the common electrode. 上記共通電極に、 上記一^ 3の行の画素電極と隣りの行の画素電極の 間隙に対応して上記走査信号線に沿って延在する、 共通電極不在部を設 け、  A common electrode absence portion extending along the scanning signal line corresponding to a gap between the pixel electrodes in the first three rows and the pixel electrodes in an adjacent row; 該共通電極不在部の中心を、 上記一つの行の画素電極と隣りの行の 画素電極の間隙中心よりも、 上記第 1の基板のラビング方向にずらした ことを特徴とする液晶表示装置。  A liquid crystal display device, wherein a center of the common electrode absence portion is shifted in a rubbing direction of the first substrate from a center of a gap between a pixel electrode in one row and a pixel electrode in an adjacent row. 7 . 上記第 1の基板或いは第 2の基板又はその両方に、 上記共通電 極不在部を覆う遮光膜を設けたことを特徴とする請求項 6に記載の液晶  7. The liquid crystal according to claim 6, wherein a light-shielding film is provided on the first substrate, the second substrate, or both, to cover the portion where the common electrode is absent. 8 . 上記各画素電極にはそれぞれ、 上記画素電極に電気的に接続さ れる保持容量素子が設けられ、 該保持容量素子の電極の少なくとも 1つ は遮光性の導電膜からなり、 上記保持容量素子により上記共通電極不在 部を遮光したことを特徴とする請求項 6に記載の液晶表示装置。 8. Each of the pixel electrodes is provided with a storage capacitor electrically connected to the pixel electrode, and at least one of the electrodes of the storage capacitor is formed of a light-shielding conductive film. 7. The liquid crystal display device according to claim 6, wherein the portion where the common electrode is absent is shielded by light. 9 . 上記液晶層はッイストネマチック型の液晶からなり、 上記液晶 層の自発螺旋ピッチは、 上記液晶層の厚さの 6倍から 1 0倍に設定した ことを特徴とする請求項 6に記載の液晶表示装置。 9. The liquid crystal layer is made of twisted nematic liquid crystal, 7. The liquid crystal display device according to claim 6, wherein the spontaneous spiral pitch of the layer is set to 6 to 10 times the thickness of the liquid crystal layer. 1 0 . 上記画素電極と上記薄膜トランジスタの間には絶縁層が設け られ、 該絶縁層には上記画素電極と上記薄膜トランジスタを接続するた めのコンタクト穴が設けられ、 上記画素電極の上記コンタクト穴に対応 する部分は、 上記画素電極のエツジとの間に上記画素電極の平坦部分が 存在するまで、 上記画素電極のエッジから離して設けられることを特徴 とする請求項 6に記載の液晶表示装置。  10. An insulating layer is provided between the pixel electrode and the thin film transistor, and a contact hole for connecting the pixel electrode and the thin film transistor is provided in the insulating layer. 7. The liquid crystal display device according to claim 6, wherein the corresponding portion is provided away from an edge of the pixel electrode until a flat portion of the pixel electrode exists between the edge of the pixel electrode and the edge of the pixel electrode. 1 1 . 一つの列の画素電極と隣りの列の画素電極は、 上記共通電極 を基準に、 異なる極性の表示電圧が印加され、  1 1. Display voltages of different polarities are applied to the pixel electrode of one column and the pixel electrode of the next column based on the common electrode. 上記共通電極に、 上記一つの列の画素電極と隣りの列の画素電極の 間隙に対応して上記映像信号線に沿って延在する、 第 2の共通電極不在 部を設け、  A second common electrode absent portion extending along the video signal line corresponding to a gap between the pixel electrode in one column and the pixel electrode in an adjacent column, 該第 2の共通電極不在部の中心を、 上記一つの列の画素電極と隣り の列の画素電極の間隙中心よりも、 上記第 1の基板のラビング方向にず らしたことを特徴とする請求項 6に記載の液晶表示装置。  The center of the second common electrode absent portion is shifted in the rubbing direction of the first substrate from the center of the gap between the pixel electrode in one column and the pixel electrode in an adjacent column. Item 7. The liquid crystal display device according to item 6. 1 2 . 透明な第 1基板上に、 画素電極と薄膜トランジスタからなる 画素を、 行方向及び列方向に複数配列し、 行方向に延在し各画素に対応 して配置される複数の走査信号線と、 列方向に延在し各画素に対応して 配置される複数の映像信号線とを有し、  1 2. A plurality of pixels each composed of a pixel electrode and a thin film transistor are arranged in a row direction and a column direction on a transparent first substrate, and a plurality of scanning signal lines extending in the row direction and arranged corresponding to each pixel are provided. And a plurality of video signal lines extending in the column direction and arranged corresponding to each pixel, 透明な第 2の基板上に共通電極を設け、 上記第 1の基板と第 2の基 板は液晶層を介して対向して設けられ、  A common electrode is provided on a transparent second substrate, and the first substrate and the second substrate are provided to face each other with a liquid crystal layer therebetween, 上記第 1の基板近傍の上記液晶層の液晶分子は、 第 1の基板の主面 に対し、 第 1の方向にチルト角を持ち、  The liquid crystal molecules of the liquid crystal layer near the first substrate have a tilt angle in a first direction with respect to a main surface of the first substrate, 上記第 2の基板近傍の液晶分子は、 第 1の基板の主面に対し第 2の 方向にチルト角を持ち、 一つの列の画素電極と隣りの列の画素電極は、 上記共通電極を基準 に、 異なる極性の表示電圧が印加され、 The liquid crystal molecules near the second substrate have a tilt angle in the second direction with respect to the main surface of the first substrate, Display voltages of different polarities are applied to the pixel electrode of one column and the pixel electrode of the adjacent column based on the common electrode, 上記共通電極に、 上記一つの列の画素電極と隣りの列の画素電極の 間隙に対応して上記映像信号線に沿って延在する、 第 1の共通電極不在 部を設け、  A first common electrode absent portion extending along the video signal line corresponding to a gap between the pixel electrode in one column and the pixel electrode in an adjacent column, 該第 1の共通電極不在部の中心を、 上記一つの列の画素電極と隣り の列の画素電極の間隙中心よりも、 上記第 1の方向にずらしたことを特 徴とする液晶表示装置。  A liquid crystal display device characterized in that the center of the first common electrode absent portion is shifted in the first direction from the center of the gap between the pixel electrode in one column and the pixel electrode in an adjacent column. 1 3 . 上記第 1の基板或いは第 2の基板又はその両方に、 上記第 1 の共通電極不在部を覆う遮光膜を設けたことを特徴とする請求項 1 2に 記載の液晶表示装置。  13. The liquid crystal display device according to claim 12, wherein a light-shielding film that covers the first common electrode-free portion is provided on the first substrate, the second substrate, or both. 1 4 . 上記各画素電極にはそれぞれ、 上記画素電極に電気的に接続 される保持容量素子が設けられ、 該保持容量素子の電極の少なくとも 1 つは遮光性の導電膜からなり、 上記保持容量素子により上記第 1の共通 電極不在部を遮光したことを特徴とする請求項 1 2に記載の液晶表示装 置。  14. Each of the pixel electrodes is provided with a storage capacitor electrically connected to the pixel electrode, and at least one of the electrodes of the storage capacitor is formed of a light-shielding conductive film. 13. The liquid crystal display device according to claim 12, wherein the first common electrode absent portion is shielded from light by an element. 1 5 . —つの行の画素電極と隣りの行の画素電極は、 上記共通電極 を基準に、 異なる極性の表示電圧が印加され、  1 5 .—Display voltages of different polarities are applied to the pixel electrode of one row and the pixel electrode of the next row based on the common electrode. 上記共通電極に、 上記一つの行の画素電極と隣りの行の画素電極の 間隙に対応して上記走査信号線に沿って延在する、 第 2の共通電極不在 部を設け、  A second common electrode absent portion extending along the scanning signal line corresponding to a gap between the pixel electrode in one row and the pixel electrode in an adjacent row, 該第 2の共通電極不在部の中心を、 上記一つの行の画素電極と隣り の行の画素電極の間隙中心よりも、 上記第 1の方向にずらしたことを特 徴とする請求項 1 2に記載の液晶表示装置。  The center of the second common electrode absent portion is shifted in the first direction from the center of the gap between the pixel electrode in one row and the pixel electrode in an adjacent row. 3. The liquid crystal display device according to 1. 1 6 . 上記第 1の基板或いは第 2の基板又はその両方に、 上記第 1 及び第 2の共通電極不在部を覆う遮光膜を設けたことを特徴とする請求 項 1 5に記載の液晶表示装置。 16. A light-shielding film provided on the first substrate and / or the second substrate, or both, to cover the first and second common electrode absent portions. Item 16. A liquid crystal display device according to item 15. 1 7 . 上記各画素電極にはそれぞれ、 上記画素電極に電気的に接続 される保持容量素子が設けられ、 該保持容量素子の電極の少なくとも 1 つは遮光性の導電膜からなり、 上記保持容量素子により上記第 1及び第 2の共通電極不在部を遮光したことを特徴とする請求項 1 5に記載の液 晶表示装置。  17. Each of the pixel electrodes is provided with a storage capacitor element electrically connected to the pixel electrode, and at least one of the electrodes of the storage capacitor element is formed of a light-shielding conductive film. 16. The liquid crystal display device according to claim 15, wherein the first and second common electrode absent portions are shielded from light by an element. 1 8 . 上記液晶層はッイストネマチック型の液晶からなり、 上記液 晶層の自発螺旋ピッチは、 上記液晶層の厚さの 6倍から 1 0倍に設定し たことを特徴とする請求項 1 5に記載の液晶表示装置。  18. The liquid crystal layer is made of a twisted nematic liquid crystal, and a spontaneous spiral pitch of the liquid crystal layer is set to 6 to 10 times the thickness of the liquid crystal layer. 15. The liquid crystal display device according to item 15. 1 9 . 上記画素電極と上記薄膜トランジスタの間には絶縁層が設け られ、 該絶縁層には上記画素電極と上記薄膜トランジスタを接続するた めのコンタクト穴が設けられ、 上記画素電極の上記コンタクト穴に対応 する部分と、 上記画素電極のエッジとの間には、 上記画素電極の平坦部 分が存在することを特徴とする請求項 1 5に記載の液晶表示装置。  19. An insulating layer is provided between the pixel electrode and the thin film transistor, and a contact hole for connecting the pixel electrode and the thin film transistor is provided in the insulating layer. 16. The liquid crystal display device according to claim 15, wherein a flat portion of the pixel electrode exists between a corresponding portion and an edge of the pixel electrode. 2 0 . 透明な絶縁物から成る第 1の基板上に間隙を置いて設けられ る第 1及び第 2電極と、 該第 1第 2電極上に設けられた第 1配向膜と、 透明な絶縁物からなる第 2の基板上に設けられる共通電極と、 該共通電 極上に設けられた第 2配向膜とを有し、 上記第 1及び第 2電極と、 上記 共通電極は液晶層を介して対向し、  20. First and second electrodes provided on a first substrate made of a transparent insulator with a gap, a first alignment film provided on the first and second electrodes, and a transparent insulating material A common electrode provided on a second substrate made of a material, and a second alignment film provided on the common electrode. The first and second electrodes and the common electrode are interposed via a liquid crystal layer. Opposite 上記第 1配向膜は、 上記第 1の基板の主面に対し上記第 1及び第 2 電極の間隙が延在する第 1方向に向けてラビング処理がなされ、 上記第 2配向膜は、 上記第 1の方向と異なる第 2の方向に向けラビ ング処理がなされ、  The first alignment film is subjected to a rubbing process on a main surface of the first substrate in a first direction in which a gap between the first and second electrodes extends, and the second alignment film is A rubbing process is performed in a second direction different from the first direction, 上記第 1及び第 2電極の間隙に対応して、 上記共通電極に電極不在 部を設け、 上記電極不在部の中心を上記第 1及び第 2電極の間隙の中心 よりも上記第 1の基板の主面に対し上記第 2の方向にずらしたことを特 徴とする液晶表示装置。 Corresponding to the gap between the first and second electrodes, an electrode-absent portion is provided on the common electrode, and the center of the electrode-absent portion is closer to the first substrate than the center of the gap between the first and second electrodes. Note that the main surface is shifted in the second direction. Liquid crystal display device.
PCT/JP2000/001861 2000-03-27 2000-03-27 Liquid crystal display device Ceased WO2001073507A1 (en)

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JP2003195312A (en) * 2001-12-27 2003-07-09 Hannstar Display Corp Liquid crystal display unit with biased bending vertical alignment mode
JP2003330036A (en) * 2002-05-10 2003-11-19 Seiko Epson Corp Electro-optical device and method for manufacturing semiconductor device
US10184670B2 (en) 2009-11-05 2019-01-22 Winstone Wallboards Limited Heating panel and method therefor

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Publication number Priority date Publication date Assignee Title
JP2003195312A (en) * 2001-12-27 2003-07-09 Hannstar Display Corp Liquid crystal display unit with biased bending vertical alignment mode
JP2003330036A (en) * 2002-05-10 2003-11-19 Seiko Epson Corp Electro-optical device and method for manufacturing semiconductor device
US10184670B2 (en) 2009-11-05 2019-01-22 Winstone Wallboards Limited Heating panel and method therefor

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