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WO2001052303A1 - Doublure pour chambre de gravure de semi-conducteur - Google Patents

Doublure pour chambre de gravure de semi-conducteur Download PDF

Info

Publication number
WO2001052303A1
WO2001052303A1 PCT/US2001/000950 US0100950W WO0152303A1 WO 2001052303 A1 WO2001052303 A1 WO 2001052303A1 US 0100950 W US0100950 W US 0100950W WO 0152303 A1 WO0152303 A1 WO 0152303A1
Authority
WO
WIPO (PCT)
Prior art keywords
liner
chamber
dome
high performance
dry etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2001/000950
Other languages
English (en)
Inventor
Joy Sawyer Bloom
Andrew Thawley Hayman
Michio Shibata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EIDP Inc
Original Assignee
EI Du Pont de Nemours and Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EI Du Pont de Nemours and Co filed Critical EI Du Pont de Nemours and Co
Priority to EP01904835A priority Critical patent/EP1247287A1/fr
Priority to CA002393283A priority patent/CA2393283A1/fr
Priority to JP2001552426A priority patent/JP2003520429A/ja
Publication of WO2001052303A1 publication Critical patent/WO2001052303A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495—Means for protecting the vessel against plasma

Definitions

  • the present invention relates to dome liners and chamber liners for use in processes involving dry etching of semiconductor devices.
  • Dry etching processes using chambers with dome-shaped ceramic or aluminum tops and aluminum sides and bottoms, in part, are used to manufacture semiconductor wafers.
  • the dry etch process uses plasma state gases to perform chemical and physical erosion on unprotected surfaces of a semiconductor wafer surface.
  • the mixture of gases used, as well as other variables such as the electrical power and pressure settings, will alter the aggressiveness and uniformity of erosion of the semiconductor surface and the chamber.
  • the chamber is filled with gas and semiconductor wafers are placed inside the chamber. Gas is then ionized with a plasma field to make the gas reactive so as to etch wafers inside the chambers.
  • a plasma field is usually made of chemically active species of gaseous compounds such as fluorine, oxygen and chlorine.
  • the exact mixture of gaseous compounds is chosen to balance the functions of the individual gases so as to achieve a desired etch activity.
  • Etching can result in the generation of etching by-products that, if not removed, will eventually contact and damage the wafers in the chamber. These byproducts can also damage the interior sides and top of the etching chamber.
  • a liner having a wall thickness greater than 2.0 mm would insulate the contents of the chamber from the exterior cooling means allowing chamber surface temperatures to increase during etching processes. For this reason, higher surface temperatures would decrease the deposition of by-products on the polymer liner surfaces.
  • the Sakai patent application reports a solution to the problem of removing by-products away from semiconductor devices located in a chamber, however, other problems associated with etching still exist. Gas generated in the chamber can be highly toxic and could escape if the chamber integrity is compromised. Consequently, a device capable of protecting the walls and the top of chamber from the gas would be desirable. The device should have a long service life and be able to survive many hours of each individual operation because the removal and replacement of a chamber component slows down the production process and significantly increases manufacturing costs.
  • the present invention relates to dome and chamber liners that may be used during numerous dry etching processes while protecting the inside walls and top of the chamber.
  • the liners of the present invention are prepared from high performance resins having a wall thickness greater than 2.0 mm, and preferably in the range of 3 mm to 8 mm.
  • High performance resins are characteristically stable at high temperatures (above 100°C), resistant to wear, resistant to plasma and oxidative stress and dimensionally stable, i.e., tending not to creep or deform.
  • the service life of a liner correlates directly with the thickness of a liner.
  • Dome liners of the present invention fit to an inside top of a chamber of a dry etching apparatus used in semiconductor manufacture and comprise high performance resin.
  • the present invention relates to chamber liners that fit to an inside wall of a chamber of a dry etching apparatus used in semiconductor manufacture, said liners comprising a high performance resin having a wall thickness of greater than 2.0 mm.
  • the present invention also relates to a chamber of a dry etching apparatus comprising a dome liner of the present invention.
  • the dome liner fits to an inside top of the chamber.
  • the chamber may also include a chamber liner of the present invention.
  • dome liner refers to a covering used to cover the top interior portion of the chamber.
  • chamber liner refers to a covering used to cover the interior chamber sidewalls.
  • a liner for the top interior portion of a dry etching chamber may be prepared from a high performance resin.
  • a liner for the interior sidewalls of a dry etching chamber may be prepared from a high performance resin and may have a wall thickness of greater than 2.0 mm.
  • FIGURE 1 illustrates a dome liner of the present invention.
  • Figure 2 illustrates a chamber liner of the present invention.
  • Figure 3 illustrates an overhead view of a variation of a dome liner and the chamber liner in the present invention.
  • Figure 4 illustrates a side view of the dome liner and the chamber liner pictured in Figure 3.
  • FIG 5 illustrates the joint between the dome liner and the chamber liner pictured in Figure 4.
  • DETAILED DESCRIPTION OF THE INVENTION Dome and chamber liners of the present invention are prepared from high performance polymer resins, preferably a high-performance thermoplastic resin.
  • Suitable resins include polybenzimidazole, polyimide, polyetherimide, polyamideimide, polyaryletherketone, polycarbonate, polyarylate, polyethersulfone, aromatic polyamide, tetrafluoroethylene/perfluoroalkylvinyl ether copolymer (PFA), polytetrafluoroethylene (PTFE), polychlorotrifluoroethylene (PCTFE), tetrafluoroethylene/hexafluoropropylene copolymer (FEP), polyvinylidend fluoride (PVDF), polyvinylfluoride (PVF), ethylene/tetrafluoroethylene copolymer (ETFE). It is preferred that the high performance resin contain no halogen atoms.
  • the high performance resins used in this invention may be readily processed by methods and processing equipment normally used in industry to form high performance polymers.
  • Typical methods for forming dome liners and chamber liners include spray coating, machining, injection molding, compression molding, plasma coating, rotomolding, strip bending and welding.
  • the forming conditions required to produce satisfactory articles depends on several process variables, such as mold complexity and dimensions, sheet thickness and polymer variables such as melt viscosity and glass transition temperature (Tg). These conditions can be determined by techniques typically used by those skilled in the art.
  • a dome liner is preferably in the shape of a dome that corresponds to the shape of the ceramic top of a chamber used in a dry etch process.
  • the dome liner may be molded into any shape that corresponds to the top of a chamber used in a dry etch process.
  • the chamber and dome liners of the present invention have a wall thickness preferably greater than 2.0 mm, and most preferably in the range of 3 mm to 8 mm.
  • the service life of a dome liner correlates directly with the thickness of the dome liner.
  • the chamber liner is preferably in the shape of the chamber.
  • a typical chamber liner would be cylindrical and 34.5 cm outer diameter and 10.2 cm high.
  • a dome liner in the shape of a dome having an outer diameter of 34.5 cm and a 10.2 cm deep.
  • the dome liner has less than 0.8 mm clearance with the dome to prevent the generation of plasma between the dome and the dome liner.
  • the chamber liner preferably has less than 0.8 mm clearance with chamber to prevent formation of plasma fields between the chamber and the liner.
  • the dome liner is not mechanically attached to the dome.
  • dome liner To use a dome liner, the dome liner is placed inside of the dome so that the convex side of the dome liner is juxtaposed with the concave inner part of the chamber.
  • the chamber liner To use the chamber liner, the chamber liner is placed inside of the chamber such that the annular surface of the liner with the greatest radius is juxtaposed with the inner radial surface of the chamber.
  • Dome and chamber liners of the present invention at 5 mm thickness may last at least 1000 RF (radio frequency) hours in a conventional dry etching process. Dome liners and chamber liners may be used separately or in conjunction with each other.
  • the dome liner of Figure 3 has an opening at the top of the dome. This open dome liner offers protection to domes in which the top of the dome of the plasma generation chamber is not involved in plasma generation and has no contact with harmful byproducts of the plasma generation process.
  • the dome liner of Figure 4 shows a dome liner 1 resting on top of the chamber liner 3.
  • the dome liner may have a groove system comprising a groove 5 on the dome liner that is complimentary to a groove 7 on the chamber liner. This groove system would aid in fitting the dome liner 1 with the chamber liner 3 when the dome liner 1 rests on top of the chamber liner 3.
  • the plaque was vacuum thermoformed using a standard industrial thermoformer equipped with ceramic heaters and a remote pyrometer to measure the surface temperature of the plaque while it is in the oven. Using a vacuum of about 95 kPa, a mold temperature between 246°C and 275°C and a sheet forming temperature between 250 and 275°C, the compression-molded plaque was formed into a dome having an outer diameter of 34.5 cm and a 10.2 cm deep draw and a minimum thickness of 2.5 mm. A top lip of the dome, formed through the molding process, was removed to provide the final article. The dome showed good mold surface replication. The dome was subsequently trimmed using conventional milling machines into the desired final part.
  • liner material was not provided at the very apex of the dome since most significant erosion of the dome was occurring at the periphery of the dome immediately under the RF coils that induce the plasma.
  • Two 50.8 mm high annular plates of pyromellitic dianhydride 4,4'-diaminodiphenylether polyimide (as used in DuPont Vespel® SP-1 parts and shapes), having outer diameters of 360 mm and inner diameters of 196 mm, were machined and assembled together to line the lower 100 mm of the chamber dome.
  • the lower plate was machined into a cylinder or outer diameter 345 mm and a wall thickness of 3 mm.
  • a mating groove was cut into the top surface from the middle of the wall to the outer diameter.
  • An upper place covered all the critical areas of the curvature of the dome.
  • the outer surface was turned on a lathe to match the surface shape of the particular dome.
  • the thickness of the liner was set at 5 mm when the inner surface was turned.
  • An extra tab of material was left on the lower surface around the outer diameter to interlock with the lower plate.
  • a plaque of the type in Dome Liner 1 was prepared.
  • the plaque had the dimensions 740mm x 740mm x 450mm.
  • This plaque was placed in a drying oven set at 200°C for 48 hours.
  • the dry plaque was vacuum thermoformed using a standard industrial thermoformer equipped with ceramic heaters and a remote pyrometer to measure the surface temperature of the plaque while in the oven.
  • a vacuum of about 95 kPa a mold temperature between 215°C and 238°C and a sheet forming temperature 275°C
  • the compression-molded plaques were formed into domes having an outer diameter of 60.8 cm and a 12.7cm deep draw.
  • An open untrimmed end of the dome was then trimmed on both the top and the bottom with a cutting tool to form a seamless ring 11.4 cm high having an outer diameter of 60.8 cm and a minimum wall thickness of 4.85mm.
  • the chamber liner was then machined to uniform thickness.

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Compositions Of Macromolecular Compounds (AREA)

Abstract

L'invention concerne une doublure pour la protection de la chambre intérieure et du dôme utilisés dans la fabrication de semi-conducteur. Ladite doublure protège le dôme et la chambre de la corrosion induite par la génération de champ de plasma et par les sous-produits des procédés de gravure à sec. Par ailleurs, la doublure de l'invention possède une longue durée de vie dans des conditions induites par la génération de champ de plasma.
PCT/US2001/000950 2000-01-11 2001-01-11 Doublure pour chambre de gravure de semi-conducteur Ceased WO2001052303A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP01904835A EP1247287A1 (fr) 2000-01-11 2001-01-11 Doublure pour chambre de gravure de semi-conducteur
CA002393283A CA2393283A1 (fr) 2000-01-11 2001-01-11 Doublure pour chambre de gravure de semi-conducteur
JP2001552426A JP2003520429A (ja) 2000-01-11 2001-01-11 半導体エッチングチャンバ用ライナ

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US48199400A 2000-01-11 2000-01-11
US09/481,994 2000-01-11

Publications (1)

Publication Number Publication Date
WO2001052303A1 true WO2001052303A1 (fr) 2001-07-19

Family

ID=23914217

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/000950 Ceased WO2001052303A1 (fr) 2000-01-11 2001-01-11 Doublure pour chambre de gravure de semi-conducteur

Country Status (5)

Country Link
EP (1) EP1247287A1 (fr)
JP (1) JP2003520429A (fr)
CN (1) CN1394351A (fr)
CA (1) CA2393283A1 (fr)
WO (1) WO2001052303A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004111432A (ja) * 2002-09-13 2004-04-08 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
WO2005056874A1 (fr) * 2003-12-09 2005-06-23 Infineon Technologies Ag Ensemble pour le traitement thermique de plaquettes de silicium dans une chambre de traitement

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0803896A2 (fr) * 1996-04-22 1997-10-29 Nisshinbo Industries Inc. Dispositif de traitement par plasma et élément de protection utilisé dans un tel dispositif
WO1999010913A1 (fr) * 1997-08-26 1999-03-04 Applied Materials, Inc. Appareil et procede permettant une transmission stable d'energie dans une chambre de traitement au plasma
WO1999063584A1 (fr) * 1998-05-29 1999-12-09 E.I. Du Pont De Nemours And Company Article en resine moulee pour garniture de chambre

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0478478A (ja) * 1990-07-18 1992-03-12 Fujitsu Ltd 半導体製造装置およびその清浄化方法
JPH08191058A (ja) * 1995-01-12 1996-07-23 Sony Corp プラズマ処理装置
US5945354A (en) * 1997-02-03 1999-08-31 Motorola, Inc. Method for reducing particles deposited onto a semiconductor wafer during plasma processing
JP3674282B2 (ja) * 1997-12-25 2005-07-20 日立化成工業株式会社 プラズマ発生装置、そのチャンバー内壁保護部材及びその製造法、チャンバー内壁の保護方法並びにプラズマ処理方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0803896A2 (fr) * 1996-04-22 1997-10-29 Nisshinbo Industries Inc. Dispositif de traitement par plasma et élément de protection utilisé dans un tel dispositif
WO1999010913A1 (fr) * 1997-08-26 1999-03-04 Applied Materials, Inc. Appareil et procede permettant une transmission stable d'energie dans une chambre de traitement au plasma
WO1999063584A1 (fr) * 1998-05-29 1999-12-09 E.I. Du Pont De Nemours And Company Article en resine moulee pour garniture de chambre

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004111432A (ja) * 2002-09-13 2004-04-08 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
WO2005056874A1 (fr) * 2003-12-09 2005-06-23 Infineon Technologies Ag Ensemble pour le traitement thermique de plaquettes de silicium dans une chambre de traitement

Also Published As

Publication number Publication date
CN1394351A (zh) 2003-01-29
JP2003520429A (ja) 2003-07-02
CA2393283A1 (fr) 2001-07-19
EP1247287A1 (fr) 2002-10-09

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