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WO2000021143A1 - Puce semi-conductrice emettant des rayonnements - Google Patents

Puce semi-conductrice emettant des rayonnements Download PDF

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Publication number
WO2000021143A1
WO2000021143A1 PCT/DE1999/003211 DE9903211W WO0021143A1 WO 2000021143 A1 WO2000021143 A1 WO 2000021143A1 DE 9903211 W DE9903211 W DE 9903211W WO 0021143 A1 WO0021143 A1 WO 0021143A1
Authority
WO
WIPO (PCT)
Prior art keywords
active layer
semiconductor chip
gan
quantum well
emitting semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/DE1999/003211
Other languages
German (de)
English (en)
Inventor
Volker HÄRLE
Berthold Hahn
Andreas Hangleiter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of WO2000021143A1 publication Critical patent/WO2000021143A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/021—Silicon based substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3407—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers characterised by special barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3425—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising couples wells or superlattices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H10H20/8252—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN characterised by the dopants

Definitions

  • the invention relates to a radiation-emitting semiconductor chip, in particular based on GaN / GalnN, in which the active layer has a single or multiple quantum well structure, in particular UV, blue - light or green light-emitting semiconductor chips.
  • the active layer In the case of a single quantum well, the active layer generally has two barrier layers and a quantum film lying between them, and in the case of a multiple quantum well there are usually x quantum films and x + 1 barrier layers (where x> l) in which the quantum films are embedded are.
  • x quantum films and x + 1 barrier layers where x> l
  • Single and multiple quantum well structures are known per se and are therefore not explained in more detail here.
  • Emitting diode chips strongly depends on the level of the operating current.
  • the reason for this can be, on the one hand, an in-segregation in the quantum well range and, on the other hand, can be piezoelectric fields that are caused by internal tension in the chip. Applying electrical voltage to the chip in the forward direction leads to a scanning of the internal fields and, with increasing current strength through the chip, to a wavelength shift of the emitted radiation toward shorter wavelengths. The greater the wavelength of the emitted radiation, the stronger this effect is shown.
  • the object of the invention is to develop a semiconductor chip of the type mentioned, in which the wavelength of the emitted radiation is largely is independent of changes in the current through the chip.
  • the former is achieved with a semiconductor chip of the type mentioned in the introduction, in which the active layer has thin quantum films with a thickness of ⁇ 3 nm.
  • FIG. 1 A particularly preferred exemplary embodiment of this, shown schematically in FIG. 1, is a
  • Semiconductor chip with an active layer 4 which has a GaN / GalnN multi-quantum well structure, in which 3.5 GalnN quantum films with a thickness ⁇ 3 nm are arranged between GaN barrier layers and which is produced on an SiC substrate 1, whereby Additional layers, in particular a buffer layer 2, can be located between the substrate 1 and the active layer 4.
  • the second is achieved with a semiconductor chip of the type mentioned in the introduction, in which the barrier layers 3, 5 and / or the quantum films are doped in an electrically conductive manner.
  • the doping is designed for the existing fields so that they are compensated for. It is based on the tension in the active layer.
  • Optimal compensation of the piezo fields is achieved by high doping of the active layer. As a result, the piezo fields are virtually short-circuited. This also anticipates the charge carrier densities that occur in later operation. Technically, this is possible, for example, through high n-doping in the area of the active zone. To a To achieve the highest possible ratio p / (p + n), high p-doping is required.
  • the charge carrier densities required for the compensation of the internal fields are greater than 10 19 cm 3 . They are achieved by doping the quantum well range or by remote doping of barrier layers.
  • the barrier layers can be doped bipolar. Effective compensation can be achieved by acceptors and donors directly on the quantum well.
  • the charge carrier densities are greater than 10 19 cm 3 .
  • p-doping and below the quantum well is advantageously heavily n-doped. The piezo fields are canceled by the fields caused by the ionized donors and acceptors.
  • a particularly preferred exemplary embodiment is a semiconductor chip with an active layer which has a GaN / GalnN multi-quantum well structure in which between GaN
  • Barrier layers of GalnN quantum films are arranged and which is produced on an SiC substrate and in which further layers, in particular a buffer layer, can be located between the substrate and the active layer, the GaN barrier layers and / or the GalnN -
  • Quantum films are electrically doped, ie they are n- or p-doped. The doping is based on the tension and not on the structure, i. H. z. B. on an n- or p-doped buffer layer.
  • a relaxed semiconductor layer is arranged between the substrate and the active layer, which has the same lattice constant as the lattice constant in the quantum well.
  • a particularly preferred exemplary embodiment of this shown schematically in FIG. 2, is a Semiconductor chip with an active layer 4, which has a GaN / GalnN multi-quantum well structure, in which 3.5 GalnN quantum files are arranged between GaN barrier layers and which is produced on an SiC substrate 1, wherein between the substrate 1 and the active
  • Layer 4 is a relaxed InGaAlN layer 6, which has the same lattice constant as that of the quantum well.
  • the barrier layers 5, 6 consist of AlGalnN.
  • the structures given above can be used for all GalnN / GaN-based LEDs as well as for all structures that have strong internal stress fields.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Led Devices (AREA)

Abstract

L'invention concerne une puce semi-conductrice émettant des rayonnements et réalisée notamment à base de GaN/GaInN. La couche active a une structure à ondes quantiques simple ou multiple et elle présente des films quantiques très fins (épaisseur maximale de 3 nm) et/ou des couches barrières et/ou des films quantiques dopés de façon électroconductrice. La longueur d'onde des rayonnements émis est largement indépendante des variations de l'intensité passant par la puce.
PCT/DE1999/003211 1998-10-05 1999-10-05 Puce semi-conductrice emettant des rayonnements Ceased WO2000021143A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19845748.0 1998-10-05
DE19845748 1998-10-05

Publications (1)

Publication Number Publication Date
WO2000021143A1 true WO2000021143A1 (fr) 2000-04-13

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Family Applications (1)

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PCT/DE1999/003211 Ceased WO2000021143A1 (fr) 1998-10-05 1999-10-05 Puce semi-conductrice emettant des rayonnements

Country Status (1)

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WO (1) WO2000021143A1 (fr)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001092428A1 (fr) * 2000-06-02 2001-12-06 Erhard Kohn Heterostructure avec dopage par donneurs sur la face arriere
WO2002097904A3 (fr) * 2001-05-30 2003-02-20 Cree Inc Structures de diode electroluminescente a base de nitrure du groupe iii avec un puits quantique et un superreseau, structures de puits quantique a base de nitrure du groupe iii et structures de superreseau a base de nitrure du groupe iii
WO2003012877A3 (fr) * 2001-07-20 2003-09-18 Erhard Kohn Composant electronique
US7692182B2 (en) 2001-05-30 2010-04-06 Cree, Inc. Group III nitride based quantum well light emitting device structures with an indium containing capping structure
WO2011098799A2 (fr) 2010-02-10 2011-08-18 Pulmagen Therapeutics (Inflammation) Limited Traitement de maladie respiratoire
US8772757B2 (en) 2005-05-27 2014-07-08 Cree, Inc. Deep ultraviolet light emitting devices and methods of fabricating deep ultraviolet light emitting devices
US9012937B2 (en) 2007-10-10 2015-04-21 Cree, Inc. Multiple conversion material light emitting diode package and method of fabricating same
US9041139B2 (en) 2007-01-19 2015-05-26 Cree, Inc. Low voltage diode with reduced parasitic resistance and method for fabricating
US20170213868A1 (en) * 2014-04-01 2017-07-27 Centre National De La Recherche Scientifique Semiconducting pixel, matrix of such pixels, semiconducting structure for the production of such pixels and their methods of fabrication

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19613265C1 (de) * 1996-04-02 1997-04-17 Siemens Ag Bauelement in stickstoffhaltigem Halbleitermaterial
EP0772249A2 (fr) * 1995-11-06 1997-05-07 Nichia Chemical Industries, Ltd. Dispositif semi-conducteur comprenant un composé de nitrure

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0772249A2 (fr) * 1995-11-06 1997-05-07 Nichia Chemical Industries, Ltd. Dispositif semi-conducteur comprenant un composé de nitrure
DE19613265C1 (de) * 1996-04-02 1997-04-17 Siemens Ag Bauelement in stickstoffhaltigem Halbleitermaterial

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
AKASAKI I ET AL: "STIMULATED EMISSION BY CURRENT INJECTION FROM AN ALGAN/GAN/GAINN QUANTUM WELL DEVICE", JAPANESE JOURNAL OF APPLIED PHYSICS,JP,PUBLICATION OFFICE JAPANESE JOURNAL OF APPLIED PHYSICS. TOKYO, vol. 34, PART 2, no. 11B, 15 November 1995 (1995-11-15), pages L1517 - L1519, XP000735115, ISSN: 0021-4922 *
CHICHIBU S ET AL: "EFFECTS OF SI-DOPING IN THE BARRIERS OF INGAN MULTIQUANTUM WELL PURPLISH-BLUE LASER DIODES", APPLIED PHYSICS LETTERS,US,AMERICAN INSTITUTE OF PHYSICS. NEW YORK, vol. 73, no. 4, 27 July 1998 (1998-07-27), pages 496 - 498, XP000774917, ISSN: 0003-6951 *
DEGUCHI T ET AL: "Luminescence spectra from InGaN multiquantum wells heavily doped with Si", APPLIED PHYSICS LETTERS, 22 JUNE 1998, AIP, USA, vol. 72, no. 25, pages 3329 - 3331, XP002129502, ISSN: 0003-6951 *
SUN C J ET AL: "QUANTUM SHIFT OF BAND-EDGE STIMULATED EMISSION IN INGAN-GAN MULTIPLE QUANTUM WELL LIGHT-EMITTING DIODES", APPLIED PHYSICS LETTERS,US,AMERICAN INSTITUTE OF PHYSICS. NEW YORK, vol. 70, no. 22, 2 June 1997 (1997-06-02), pages 2978 - 2980, XP000694810, ISSN: 0003-6951 *

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7352008B2 (en) * 2000-06-02 2008-04-01 Microgan Gmbh Heterostructure with rear-face donor doping
WO2001092428A3 (fr) * 2000-06-02 2002-05-30 Erhard Kohn Heterostructure avec dopage par donneurs sur la face arriere
WO2001092428A1 (fr) * 2000-06-02 2001-12-06 Erhard Kohn Heterostructure avec dopage par donneurs sur la face arriere
US7692182B2 (en) 2001-05-30 2010-04-06 Cree, Inc. Group III nitride based quantum well light emitting device structures with an indium containing capping structure
US9054253B2 (en) 2001-05-30 2015-06-09 Cree, Inc. Group III nitride based quantum well light emitting device structures with an indium containing capping structure
CN100350637C (zh) * 2001-05-30 2007-11-21 克里公司 具有量子阱和超晶格的基于ⅲ族氮化物的发光二极管结构
US7312474B2 (en) 2001-05-30 2007-12-25 Cree, Inc. Group III nitride based superlattice structures
US6958497B2 (en) 2001-05-30 2005-10-25 Cree, Inc. Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures
WO2002097904A3 (fr) * 2001-05-30 2003-02-20 Cree Inc Structures de diode electroluminescente a base de nitrure du groupe iii avec un puits quantique et un superreseau, structures de puits quantique a base de nitrure du groupe iii et structures de superreseau a base de nitrure du groupe iii
US9112083B2 (en) 2001-05-30 2015-08-18 Cree, Inc. Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures
WO2003012877A3 (fr) * 2001-07-20 2003-09-18 Erhard Kohn Composant electronique
US8772757B2 (en) 2005-05-27 2014-07-08 Cree, Inc. Deep ultraviolet light emitting devices and methods of fabricating deep ultraviolet light emitting devices
US9041139B2 (en) 2007-01-19 2015-05-26 Cree, Inc. Low voltage diode with reduced parasitic resistance and method for fabricating
US9012937B2 (en) 2007-10-10 2015-04-21 Cree, Inc. Multiple conversion material light emitting diode package and method of fabricating same
WO2011098799A2 (fr) 2010-02-10 2011-08-18 Pulmagen Therapeutics (Inflammation) Limited Traitement de maladie respiratoire
US20170213868A1 (en) * 2014-04-01 2017-07-27 Centre National De La Recherche Scientifique Semiconducting pixel, matrix of such pixels, semiconducting structure for the production of such pixels and their methods of fabrication
US10103195B2 (en) * 2014-04-01 2018-10-16 Centre National De La Recherche Scientifique Semiconducting pixel, matrix of such pixels, semiconducting structure for the production of such pixels and their methods of fabrication

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