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WO2000004375A1 - Instrument de mesure par micro-ondes et methode afferente - Google Patents

Instrument de mesure par micro-ondes et methode afferente Download PDF

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Publication number
WO2000004375A1
WO2000004375A1 PCT/US1999/014147 US9914147W WO0004375A1 WO 2000004375 A1 WO2000004375 A1 WO 2000004375A1 US 9914147 W US9914147 W US 9914147W WO 0004375 A1 WO0004375 A1 WO 0004375A1
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WO
WIPO (PCT)
Prior art keywords
instrument
microstripline
resonators
resonator
resonator assembly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US1999/014147
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English (en)
Inventor
Massood Tabib-Azar
Steven Leclair
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Manufacturing Instrumentation Consultant Co
Original Assignee
Manufacturing Instrumentation Consultant Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Manufacturing Instrumentation Consultant Co filed Critical Manufacturing Instrumentation Consultant Co
Priority to AU49590/99A priority Critical patent/AU4959099A/en
Publication of WO2000004375A1 publication Critical patent/WO2000004375A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N22/00—Investigating or analysing materials by the use of microwaves or radio waves, i.e. electromagnetic waves with a wavelength of one millimetre or more

Definitions

  • the invention is related to the use of evanescent microwaves to measure a sample material.
  • the invention is related to a microstripline resonator assembly, and methods of using the assembly to measure or test sample materials.
  • Evanescent waves have been used in various measuring instruments to measure extremely small features. For instance, evanescent optical and microwave fields are both used in high resolution imaging of materials. Such evanescent waves can be used in both a reflection or a transmission mode.
  • FIG. 1 shows a microstripline resonator 30 on a substrate 32.
  • the microstripline resonator 30 includes a feed line 34 and a resonator portion 36 having a tapered tip 38.
  • Figure 2 shows how the different portions of the microstripline resonator are formed on a top surface of the substrate 32.
  • microstripline resonator we treat the microstripline resonator as an ideal loss-less microstripline and a short length of current carrying wire 42, as shown in Figure 4A.
  • FIG. 4B A second theoretical model is shown in Figure 4B.
  • the wire 44 at the end of the microstripline resonator is open. This is typically referred to as an electric dipole probe configuration.
  • FIG. 6 shows a plurality of arrows 39 which indicate a field strength for different positions around the tip of a microstripline resonator 30.
  • the probe can treat the probe as an electrically short antenna (i.e., its length is shorter than the wavelength) that is placed near a dissipating medium.
  • FIG. 5 shows a microstripline resonator 30 that includes a feed line 34 and a resonator portion 36 having a tapered tip 38, all of which are formed on a substrate 32.
  • Figure 5 shows how the electrical characteristics of the microstripline resonator, and its interaction with the sample material, can be explained using electrical circuit components.
  • the coupling between the feed line 34 and the resonator portion 36 can be modeled as a first capacitor C,.
  • the coupling between the tip 38 of the resonator and the sample material can be modeled as a third capacitor C 3 .
  • the actual electrical characteristics of the sample material can be modeled as a resistor R s and a capacitor C s in parallel.
  • FIG 7 shows the reflection coefficient curves for a microstripline resonator at different activation frequencies.
  • the curve 48 indicates the reflection coefficient of the microstripline resonator when nothing surrounds the tip of the resonator. Under these conditions, a resonant frequency occurs at 1 GHz.
  • the reflection coefficient is given by the curve 50. As can be seen in Figure 7, the proximity of the copper sample material shifts the resonant frequency to approximately 1.08 GHz.
  • Figure 8 shows the resonance curve for a microstripline resonator when it was placed adjacent two different types of materials.
  • the curve 52 represents a resistive sample
  • the curve 54 represents a conductive metallic sample.
  • the reflection coefficient of a microstripline resonator as it is passed across the surface of the sample material, one can determine whether the electrical characteristics of the sample material vary. This process can be used to scan a sample material for defects, residual stresses, or subsurface features.
  • the invention is a microstripline resonator array that can be used to characterize sample materials.
  • the microstripline resonator array can have various shapes which are useful for sensing the characteristics of various shapes of sample materials.
  • the resonator array assembly can be contained within a housing which protects the assembly from detrimental environmental conditions. The housing would have a window which would allow the electrical fields produced by each of the microstripline resonators to interact with a sample material, while still protecting the resonator array from the environment.
  • Embodiments of the invention could includes microstripline resonator arrays where the individual microstripline resonators have different tip configurations.
  • the electrical characteristics of the different tipped resonators can be used to account for variations in a separation distance between the resonator array and a sample material.
  • embodiments of the invention could have microstripline resonator arrays where each of the microstripline resonators have a different resonator length.
  • the different resonator length will give rise to a different electromagnetic frequency, which in turn results in a different penetration depth into a sample material.
  • each of the microstripline resonators can be used to probe a sample material at a different distance below the surface of the sample material.
  • An array of microstripline resonators of varying lengths can allow one to calculate or create a profile of the characteristics of the sample material at different depths.
  • microstripline resonators could also be used in an apparatus embodying the invention that is designed to monitor electronic spin transitions in a sample material.
  • the assembly would include a device for applying a magnetic field to the sample material, as well as a microstripline resonator, or an array of microstripline resonators. Variations in the magnetic field, or in the frequency of the electromagnetic emissions from the resonator, can be used to induce electronic spin transitions in the sample material. The occurrence of the spin transitions can be detected by variations in the electrical characteristics of the microstripline resonator.
  • Embodiments of the invention can be used to sense or to measure doping profiles, carrier lifetime and activation energies of the sample semiconductor material.
  • Figure 1 is a perspective diagram of a microstripline resonator formed on a substrate
  • Figure 2 is a side view of a microstripline resonator on a substrate adjacent a sample material
  • Figure 3 is a graph showing the electrical field strength of a microstripline resonator for different distances from the tip of the resonator;
  • Figures 4A and 4B show alternate models for describing the electrical characteristics of a microstripline resonator;
  • Figure 5 shows how a microstripline resonator and a sample material can be modeled with electrical components
  • Figure 6 is a diagram showing the electrical field strength of a field generated adjacent a tip of a microstripline resonator
  • Figure 7 is a chart showing changes in the reflection coefficient of a microstripline resonator when it is adjacent different materials
  • Figure 8 is a diagram showing changes in the reflection coefficient of a microstripline resonator when it is adjacent a resistive material and a conductive material
  • Figure 9 is a perspective diagram of a microstripline resonator array
  • Figure 10 is a plan view of a microstripline resonator array arranged in a semicircle
  • Figure 11 is a diagram of a microstripline resonator inside a housing
  • Figure 12 is a plan view of a microstripline resonator assembly on a substrate
  • Figure 13 is a diagram of a microstripline resonator array, wherein the microstripline resonators have different tip configurations
  • Figure 14 is a diagram of a microstripline resonator array, wherein different microstripline resonators have different lengths
  • Figure 15 is a diagram of an apparatus that can be used to scan a microstripline resonator array across the surface of a sample material or to measure carrier lifetime and activation energies of a semiconductor material; and
  • Figure 16 is a diagram of an apparatus that can be used to sense electronic spin transitions in a sample material.
  • a microstripline resonator array embodying the invention is shown in Figure 9.
  • the array includes a plurality of microstripline resonators formed on the top surface of a substrate.
  • Each microstripline resonator array includes a feed line 34, a resonator portion 36, and a tip portion 38.
  • the tip portions 38 can have a variety of different configurations, as will be described more fully below.
  • the array shown in Figure 9 would be ideal for detecting characteristics of a sample material having a flat surface.
  • Figure 10 shows a plan view of an alternate embodiment of a microstripline resonator array, wherein the resonators are arranged in a semicircle.
  • a semicircular portion 56 is removed from the substrate. This embodiment would be ideal for measuring characteristics of a curved or circular sample material.
  • FIG 11 shows a microstripline resonator array inside a protective housing 60.
  • the housing would have a window 62, formed of a suitable material, which allows the electrical fields generated by the tips 38 of the microstripline resonators to pass through the housing and to interact with a sample material.
  • the window 62 of the housing 60 could be formed from aluminum, Teflon, diamond-like films, GaN, or other suitable materials.
  • the housing 60 should prevent dust particles or other potentially hazardous material from reaching the microstripline resonator array.
  • Figure 12 shows a slightly more detailed view of the microstripline resonator formed on a substrate 32.
  • the device includes an RF source 66 coupled to a circulator 64.
  • the circulator 64 is also connected to a detector 68.
  • the circulator 64 couples RF energy from the RF source 66 into the feed line 34, and thus the actual resonator section 36.
  • the detector 68 can be used to monitor the electrical characteristics of the resonator assembly. All of these features can be formed on a single integrated circuit chip.
  • a plurality of microstripline resonator assemblies, like the one shown in Figure 12, can be incorporated into an array as shown in Figures 9-11.
  • a microstripline resonator array embodying the invention can be used to determine doping profiles of a semiconductor substrate.
  • the array would be placed near the surface of the semiconductor substrate, and the array would then be moved along the surface of the substrate.
  • the electrical characteristics of each of the microstripline resonators in the array would be monitored as the array passes over different portions of the substrate. Variations in the electrical characteristics of the individual microstripline resonators would indicate a variation in the doping concentration within the substrate.
  • a microstripline resonator array embodying the invention is sensitive to variations in the separation distance. This can be problematic if the surface under examination is not uniform, or if it is difficult to pass the array across the surface at a substantially constant separation distance.
  • two different microstripline resonators are used to sense the characteristics of a sample material S.
  • the first microstripline resonator has a tapered tip 38b.
  • the second microstripline resonator has a substantially flat tip 38b.
  • the output of both microstripline resonators will be dependent upon the separation distance, however, the dependence will be different due to the different probe tip configurations. Taking a ratio of the probe outputs provides a way to compensate for separation distance variations.
  • the penetration depth of a microwave signal inside a sample material is inversely proportional to the square root of the frequency of the signal.
  • microstripline resonators used in the present invention have a resonant frequency which is dependent upon the length of the resonator section 36, it is not possible to selectively vary the frequency of the microwaves generated.
  • the microstripline resonator array shown in Figure 14 can be used to determine characteristics of a sample material at a plurality of different depths. For instance, the array could be passed over the surface of a sample material a plurality of times so that each of the microstripline resonators passes over the same locations. For instance, during a first pass, the tip 38a of the first microstripline resonator would pass over a particular location on the sample material. During a subsequent pass, the tip 38b of a second microstripline resonator would pass over the same location. Due to their different operating frequencies, the waves produced by each of the two microstripline resonators would penetrate to a different depth.
  • the detected electrical characteristics of the microstripline resonators would give an indication of characteristics of the sample material at different depths under the interrogated location.
  • This type of multiple pass approach could be used to generate a three dimensional doping profile for a semiconductor substrate.
  • the array shown in Figure 14 could also be used to help eliminate problems caused by a variation in the separation distance.
  • a microstripline resonator array embodying the invention could also be used to determine carrier lifetime and activation energies of a semiconductor substrate. Because the microwave probe response is very fast, it can be used to sense time varying characteristics of a substrate. To determine carrier lifetime, or activation energy characteristics of a substrate, the substrate could be perturbed with an external stimulus such as an optical pulse or a high power electromagnetic pulse. A microstripline resonator array could then monitor the recovery of the semiconductor surface after the perturbing energy is removed. The sensed electrical characteristics of the resonators could then be used to determine carrier lifetime or activation energies.
  • An apparatus that can be used to scan a microstripline resonator array embodying the invention across the surface of a sample material is shown in Figure 15.
  • the sample material S is mounted on a movable table 82.
  • a microstripline resonator array 60 is held in a fixation unit 84 of a movable arm 86.
  • the movable arm 86 is capable of moving the fixation portion 84 toward and away from the surface of the table 82 in the direction of arrows 90.
  • the movable table 82 is capable of moving in the directions shown by the arrows 92.
  • the microstripline resonator array 60 would be moved into close proximity with the sample material S by the movable arm 86.
  • the movable table 82 could then move with respect to the microstripline resonator array 60 to accomplish the scanning action.
  • the table could be movable in the direction of the arrows 90, and the movable arm 86 could be movable in the direction of arrows 92.
  • the movable arm 86 could be capable of moving in all three axes, and the sample material could remain fixed.
  • the sample material could be movable in all three axes, and the microstripline resonator array 60 could remain fixed.
  • the apparatus shown in Figure 15 could be used to determine doping profiles of a semiconductor substrate as described above. Alternatively, this apparatus could be used to determine carrier lifetime and activation energies of a semiconductor substrate using a perturbing apparatus 91 which can be used to deliver a pulse of electromagnetic radiation to a surface of the substrate. As mentioned above, the perturbing pulse could be an optical pulse, or an electromagnetic pulse.
  • Another apparatus embodying the invention that can be used to determine electrical spin transitions of a sample material is shown in Figure 16.
  • the apparatus includes a magnetic device 94 for applying a magnetic field to a sample material S. Typically, the magnetic device 94 would include two opposed arms 98, 99 and the magnetic field would be generated between the two arms 98, 99. The sample material S would be placed between the two arms 98, 99, and a microstripline assembly 30 would be located adjacent a surface of the sample material S.
  • the magnetic device would apply a substantially constant magnetic field to the sample material S.
  • the frequency of the microwave emissions from the microstripline resonator would then be varied. Whenever the microwave photon energy output by the microstripline 30 becomes equal to the transition energy of the spin, a transition would occur, which would absorb energy from the microwave field. The spin transition would alter an electrical characteristic of the microstripline resonator, which would be sensed by a detector of the device. Since it may be difficult to vary the frequency of the emissions of a microstripline resonator, the assembly 30 could include a plurality of microstripline resonators, each of which is constructed to output different frequency emissions.
  • the different microstripline resonators could be selectively energized until one of the resonators causes an electrical spin transition.
  • the microwave frequency of the microstripline resonator would be kept substantially fixed, and the magnetic field produced by the magnetic device 94 would be varied. The varying magnetic field would alter the spin transition energy, and when the transition energy coincides with the microwaves photon energy, a transition would occur. Again, the transition would be sensed by sensing electrical characteristics of the microstripline resonator.
  • microstripline resonator arrays embodying the invention could have a variety of different physical shapes and sizes for determining the characteristics of different sample materials.
  • any individual microstripline resonator array could have a plurality of different microstripline resonators within the array.
  • the resonators could vary by their tip configuration, or their resonator width or length.
  • the microstripline resonator arrays shown in Figures 9 and 10 are all formed on a single substrate, multiple substrate arrays could also be created.
  • Methods of using the resonator arrays need not use the exact microstripline resonator array configuration shown in the figures of the present application. Many different resonator configurations are possible. Any resonator structure that outputs evanescent microwaves that are useful for determining characteristics of a sample material can be used in methods embodying the present invention.

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
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Abstract

Cette invention a trait à un appareil, ainsi qu'à la méthode correspondante, permettant de déterminer les caractéristiques d'un matériau échantillon, cet appareil utilisant les micro-ondes évanescentes produite par un ou plusieurs résonateur à ligne microruban. Plusieurs de ces résonateurs peuvent être disposés en un réseau sur un substrat (32) à promener sur la surface du matériau échantillon afin de déterminer rapidement certaines caractéristiques de celui-ci. De même, des résonateurs de dimensions ou de formes différentes (36) peuvent être disposés en un réseau afin de déterminer certaines caractéristiques d'un matériau échantillon à des profondeurs différentes. Il est, de surcroît, possible d'utiliser des têtes de résonateur de formes différentes (38) pour prendre en compte les variations en matière de distance de séparation entre le réseau et le matériau échantillon. On peut également utiliser un dispositif faisant intervenir cet appareil pour déterminer des transitions de spin dans le matériau échantillon afin de déterminer des profils de dopant dans un semi-conducteur et de déterminer la durée de vie de porteur de charge ou les énergies d'activation d'un substrat à semi-conducteur.
PCT/US1999/014147 1998-07-15 1999-07-14 Instrument de mesure par micro-ondes et methode afferente Ceased WO2000004375A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU49590/99A AU4959099A (en) 1998-07-15 1999-07-14 Microwave measuring instrument and methods of measuring with microwaves

Applications Claiming Priority (2)

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US11583098A 1998-07-15 1998-07-15
US09/115,830 1998-07-15

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1241469A3 (fr) * 2001-03-15 2004-04-14 Hauni Maschinenbau AG Dispositif résonateur hyperfréquence pour des mesures sur du tabac
EP1408327A3 (fr) * 2002-10-09 2004-04-21 Neocera, Inc. Sonde pour la mesure locale de la permittivité, qui comprend une ouverture, et procédé de fabrication
EP1933132A3 (fr) * 2006-12-15 2009-04-15 Voith Patent GmbH Procédé et dispositif destinés à la détermination de l'humidité d'une bande de matériau déroulante
DE102010019525A1 (de) * 2010-05-06 2011-11-10 Tutech Innovation Gmbh Nahfeldsensor zur lokalen Messung von dielektrischen Eigenschaften
DE102014109401A1 (de) * 2014-07-04 2016-01-07 Sick Ag Sensor für eine Rollenbahn und Verfahren zum Erkennen von auf einer Rollenbahn befindlichen Objekten
CN114235849A (zh) * 2021-12-22 2022-03-25 杭州电子科技大学 基于改进缺陷地结构的高灵敏度微波微流控传感器

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4782297A (en) * 1987-08-06 1988-11-01 Bruker Analytische Mebtechnik GmbH Silberstein Electron spin resonance spectrometer
US5072172A (en) * 1989-08-30 1991-12-10 Stolar, Inc. Method and apparatus for measuring the thickness of a layer of geologic material using a microstrip antenna
US5416490A (en) * 1993-07-16 1995-05-16 The Regents Of The University Of Colorado Broadband quasi-microstrip antenna
US5497098A (en) * 1994-11-10 1996-03-05 Mcdonnell Douglas Corporation Microwave sensor for identifying the surface properties of a workpiece and associated method
US5821410A (en) * 1996-09-20 1998-10-13 Regents Of The University Of California Scanning tip microwave near field microscope

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4782297A (en) * 1987-08-06 1988-11-01 Bruker Analytische Mebtechnik GmbH Silberstein Electron spin resonance spectrometer
US5072172A (en) * 1989-08-30 1991-12-10 Stolar, Inc. Method and apparatus for measuring the thickness of a layer of geologic material using a microstrip antenna
US5416490A (en) * 1993-07-16 1995-05-16 The Regents Of The University Of Colorado Broadband quasi-microstrip antenna
US5497098A (en) * 1994-11-10 1996-03-05 Mcdonnell Douglas Corporation Microwave sensor for identifying the surface properties of a workpiece and associated method
US5821410A (en) * 1996-09-20 1998-10-13 Regents Of The University Of California Scanning tip microwave near field microscope

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1241469A3 (fr) * 2001-03-15 2004-04-14 Hauni Maschinenbau AG Dispositif résonateur hyperfréquence pour des mesures sur du tabac
US6747460B2 (en) 2001-03-15 2004-06-08 Hauni Maschinenbau Ag Microwave-resonator and measuring device
US6917205B2 (en) 2001-03-15 2005-07-12 Hauni Maschinenbau Ag Microwave-resonator and measuring device
EP1408327A3 (fr) * 2002-10-09 2004-04-21 Neocera, Inc. Sonde pour la mesure locale de la permittivité, qui comprend une ouverture, et procédé de fabrication
EP1933132A3 (fr) * 2006-12-15 2009-04-15 Voith Patent GmbH Procédé et dispositif destinés à la détermination de l'humidité d'une bande de matériau déroulante
US7759947B2 (en) 2006-12-15 2010-07-20 Voith Patent Gmbh Method and apparatus for determining the moisture of a running material web
DE102010019525A1 (de) * 2010-05-06 2011-11-10 Tutech Innovation Gmbh Nahfeldsensor zur lokalen Messung von dielektrischen Eigenschaften
DE102010019525B4 (de) * 2010-05-06 2012-06-21 Tutech Innovation Gmbh Nahfeldsensor zur lokalen Messung von dielektrischen Eigenschaften
DE102014109401A1 (de) * 2014-07-04 2016-01-07 Sick Ag Sensor für eine Rollenbahn und Verfahren zum Erkennen von auf einer Rollenbahn befindlichen Objekten
DE102014109401B4 (de) * 2014-07-04 2017-04-06 Sick Ag Sensor für eine Rollenbahn und Verfahren zum Erkennen von auf einer Rollenbahn befindlichen Objekten
CN114235849A (zh) * 2021-12-22 2022-03-25 杭州电子科技大学 基于改进缺陷地结构的高灵敏度微波微流控传感器
CN114235849B (zh) * 2021-12-22 2023-08-01 杭州电子科技大学 基于改进缺陷地结构的高灵敏度微波微流控传感器

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