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WO2000067291A3 - Microfabricated template for multiple charged particle beam calibrations and shielded charged particle beam lithography - Google Patents

Microfabricated template for multiple charged particle beam calibrations and shielded charged particle beam lithography Download PDF

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Publication number
WO2000067291A3
WO2000067291A3 PCT/US2000/040082 US0040082W WO0067291A3 WO 2000067291 A3 WO2000067291 A3 WO 2000067291A3 US 0040082 W US0040082 W US 0040082W WO 0067291 A3 WO0067291 A3 WO 0067291A3
Authority
WO
WIPO (PCT)
Prior art keywords
charged particle
particle beam
shielded
calibrations
template
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2000/040082
Other languages
French (fr)
Other versions
WO2000067291A2 (en
Inventor
Kim Y Lee
Ho-Seob Kim
Marian Mankos
Lawrence Muray
T H P Chang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Etec Systems Inc
Original Assignee
Etec Systems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Etec Systems Inc filed Critical Etec Systems Inc
Priority to KR1020017000065A priority Critical patent/KR20010100758A/en
Priority to IL14071400A priority patent/IL140714A0/en
Priority to EP00929001A priority patent/EP1135789A2/en
Priority to JP2000616043A priority patent/JP2002543607A/en
Priority to CA002336557A priority patent/CA2336557A1/en
Priority to AU47153/00A priority patent/AU4715300A/en
Publication of WO2000067291A2 publication Critical patent/WO2000067291A2/en
Publication of WO2000067291A3 publication Critical patent/WO2000067291A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H01J2237/12—Lenses electrostatic
    • H01J2237/1205—Microlenses

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

A method, an associated structure, and an apparatus for multiple charged particle beam calibration and shielded charged particle lithography. A template defining an array of membranes is positioned above a target (e.g., a semiconductor wafer of the electron beams). Each membrane defines a through slot (opening) and a set of registration marks which are located with respect to registration marks of the other membranes. Patterns are written onto the target by scanning each electron beam through its associated through slot. Intra- and inter-charged particle beam calibrations for each charged particle beam are carried out using its associated set of registration marks. The template also suppresses undesirable electrical charging of any resist present on the target during the exposure process.
PCT/US2000/040082 1999-05-03 2000-05-03 Microfabricated template for multiple charged particle beam calibrations and shielded charged particle beam lithography Ceased WO2000067291A2 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1020017000065A KR20010100758A (en) 1999-05-03 2000-05-03 Microfabricated template for multiple charged particle beam calibrations and shielded charged particle beam lithography
IL14071400A IL140714A0 (en) 1999-05-03 2000-05-03 Microfabricated template for multiple charged particle beam calibrations and shielded charged particle beam lithography
EP00929001A EP1135789A2 (en) 1999-05-03 2000-05-03 Microfabricated template for multiple charged particle beam calibrations and shielded charged particle beam lithography
JP2000616043A JP2002543607A (en) 1999-05-03 2000-05-03 Microfabricated templates for multiple charged particle beam calibration and shielded charged particle lithography
CA002336557A CA2336557A1 (en) 1999-05-03 2000-05-03 Microfabricated template for multiple charged particle beam calibrations and shielded charged particle beam lithography
AU47153/00A AU4715300A (en) 1999-05-03 2000-05-03 Microfabricated template for multiple charged particle beam calibrations and shielded charged particle beam lithography

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US30450599A 1999-05-03 1999-05-03
US09/304,505 1999-05-03

Publications (2)

Publication Number Publication Date
WO2000067291A2 WO2000067291A2 (en) 2000-11-09
WO2000067291A3 true WO2000067291A3 (en) 2001-07-05

Family

ID=23176813

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2000/040082 Ceased WO2000067291A2 (en) 1999-05-03 2000-05-03 Microfabricated template for multiple charged particle beam calibrations and shielded charged particle beam lithography

Country Status (7)

Country Link
EP (1) EP1135789A2 (en)
JP (1) JP2002543607A (en)
KR (1) KR20010100758A (en)
AU (1) AU4715300A (en)
CA (1) CA2336557A1 (en)
IL (1) IL140714A0 (en)
WO (1) WO2000067291A2 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4677109B2 (en) * 2001-03-06 2011-04-27 株式会社トプコン Reference template manufacturing method and reference template manufactured by the method
DE60127677T2 (en) 2001-10-05 2007-12-27 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Electron beam device with multiple beam
WO2007050023A1 (en) 2005-10-26 2007-05-03 Micronic Laser Systems Ab Writing apparatuses and methods
US8122846B2 (en) 2005-10-26 2012-02-28 Micronic Mydata AB Platforms, apparatuses, systems and methods for processing and analyzing substrates
EP2117035B1 (en) * 2007-03-02 2017-06-14 Advantest Corporation Multi-column electron beam exposure apparatuses and methods
CN105143987B (en) 2013-03-12 2017-10-20 麦克罗尼克迈达塔有限责任公司 The alignment fiducials method of machine-building and to Barebone
WO2014140047A2 (en) 2013-03-12 2014-09-18 Micronic Mydata AB Method and device for writing photomasks with reduced mura errors
CN112397363B (en) * 2020-09-28 2022-08-30 西安增材制造国家研究院有限公司 Electron gun beam spot correction device and correction method
DE102021120913B3 (en) * 2021-08-11 2023-02-09 Carl Zeiss Smt Gmbh Device for analyzing and/or processing a sample with a particle beam and method

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4153843A (en) * 1977-03-23 1979-05-08 Bell Telephone Laboratories, Incorporated Multiple beam exposure system
US4331505A (en) * 1980-06-02 1982-05-25 Man Maschinenfabrik Augsburg-Nurnburg A.G. Method for manufacturing an electron beam emission aperture
US4528452A (en) * 1982-12-09 1985-07-09 Electron Beam Corporation Alignment and detection system for electron image projectors
US4899060A (en) * 1987-05-08 1990-02-06 Siemens Aktiengesellschaft Diaphragm system for generating a plurality of particle probes haivng variable cross section
EP0412393A2 (en) * 1989-08-08 1991-02-13 Etec, Inc. Electron-detector diode biassing scheme for improved writing by an electron beam lithography machine
US5012105A (en) * 1989-02-02 1991-04-30 Nippon Seiko Kabushiki Kaisha Multiple-imaging charged particle-beam exposure system
US5122663A (en) * 1991-07-24 1992-06-16 International Business Machine Corporation Compact, integrated electron beam imaging system
US5155412A (en) * 1991-05-28 1992-10-13 International Business Machines Corporation Method for selectively scaling a field emission electron gun and device formed thereby
EP0780879A2 (en) * 1995-12-21 1997-06-25 Nec Corporation Electron beam exposure apparatus
US5831272A (en) * 1997-10-21 1998-11-03 Utsumi; Takao Low energy electron beam lithography
US5838006A (en) * 1996-10-17 1998-11-17 Etec Systems, Inc. Conical baffle for reducing charging drift in a particle beam system
GB2340991A (en) * 1998-08-19 2000-03-01 Ims Ionen Mikrofab Syst Multibeam particle lithography

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4153843A (en) * 1977-03-23 1979-05-08 Bell Telephone Laboratories, Incorporated Multiple beam exposure system
US4331505A (en) * 1980-06-02 1982-05-25 Man Maschinenfabrik Augsburg-Nurnburg A.G. Method for manufacturing an electron beam emission aperture
US4528452A (en) * 1982-12-09 1985-07-09 Electron Beam Corporation Alignment and detection system for electron image projectors
US4899060A (en) * 1987-05-08 1990-02-06 Siemens Aktiengesellschaft Diaphragm system for generating a plurality of particle probes haivng variable cross section
US5012105A (en) * 1989-02-02 1991-04-30 Nippon Seiko Kabushiki Kaisha Multiple-imaging charged particle-beam exposure system
EP0412393A2 (en) * 1989-08-08 1991-02-13 Etec, Inc. Electron-detector diode biassing scheme for improved writing by an electron beam lithography machine
US5155412A (en) * 1991-05-28 1992-10-13 International Business Machines Corporation Method for selectively scaling a field emission electron gun and device formed thereby
US5122663A (en) * 1991-07-24 1992-06-16 International Business Machine Corporation Compact, integrated electron beam imaging system
EP0780879A2 (en) * 1995-12-21 1997-06-25 Nec Corporation Electron beam exposure apparatus
US5838006A (en) * 1996-10-17 1998-11-17 Etec Systems, Inc. Conical baffle for reducing charging drift in a particle beam system
US5831272A (en) * 1997-10-21 1998-11-03 Utsumi; Takao Low energy electron beam lithography
GB2340991A (en) * 1998-08-19 2000-03-01 Ims Ionen Mikrofab Syst Multibeam particle lithography

Also Published As

Publication number Publication date
JP2002543607A (en) 2002-12-17
WO2000067291A2 (en) 2000-11-09
CA2336557A1 (en) 2000-11-09
AU4715300A (en) 2000-11-17
IL140714A0 (en) 2002-02-10
KR20010100758A (en) 2001-11-14
EP1135789A2 (en) 2001-09-26

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