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WO2000065879A1 - Dispositif d'electroluminescence organique avec element reflechissant hautement efficace - Google Patents

Dispositif d'electroluminescence organique avec element reflechissant hautement efficace Download PDF

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Publication number
WO2000065879A1
WO2000065879A1 PCT/US2000/011161 US0011161W WO0065879A1 WO 2000065879 A1 WO2000065879 A1 WO 2000065879A1 US 0011161 W US0011161 W US 0011161W WO 0065879 A1 WO0065879 A1 WO 0065879A1
Authority
WO
WIPO (PCT)
Prior art keywords
electrode
layers
layer
light emitting
emitting device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2000/011161
Other languages
English (en)
Inventor
Gregory T. Prando
Richard A. Campos
Kerry O. Tice
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
eMagin Corp
Original Assignee
eMagin Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by eMagin Corp filed Critical eMagin Corp
Publication of WO2000065879A1 publication Critical patent/WO2000065879A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/826—Multilayers, e.g. opaque multilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/856—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H10K50/171—Electron injection layers

Definitions

  • the present invention relates to an organic electroluminescence device.
  • the present invention relates to a layered or stacked electrode for an organic electroluminescence.
  • OLED organic electroluminescence device or organic light emitting device
  • the basic structure of an OLED 1 is illustrated in Fig. 1.
  • the OLED 1 includes a substrate 10, a first electrode 11 formed on the substrate 10, at least one organic thin film layer 12 formed on the first electrode 11, and a second electrode 13 formed on the at least one organic thin film layer 12.
  • the electrodes 11 and 13 may be optically reflective or transmissive, depending on the desired direction of light exiting from the OLED 1.
  • the OLED 1 may be encapsulated to maintain material and structural integrity.
  • the first electrode 11 may be formed from indium tin oxide ("ITO") which has high optical transmission, electrical conductivity and high electrical injection into the at least one 20 organic thin film layer 12.
  • ITO indium tin oxide
  • An electrode formed from ITO can be made to have 80-90% optical transmission with 10-100% sheet resistances.
  • ITO is also an operationally good positive-carrier for electrical injection into the at least one organic thin film layer 12.
  • second electrode 13 is then formed from a partially reflective material (e.g., molybdenum, ruthenium and vanadium).
  • the second electrode 13 has a thickness of approximately 1 OOOA.
  • the second electrode 13 may be formed from a pair of layers 131 and 132, as shown in Fig. 2.
  • a very thin layer 131 of a dielectric material e.g.. LiF and SiO 2
  • the layer 131 has a thickness of less than lOOA.
  • a thicker layer 132 of aluminum is formed on the thin layer 131.
  • the thicker layer 132 of aluminum has an approximate thickness of 2000A.
  • composite electrode having layers 131 and 132 Although the operation of composite electrode having layers 131 and 132 is not fully understood, the thin layer 131 is thought to assist electron injection into select organic materials of the thin film layer 12.
  • the aluminum layer 132 is believed to provide functional conductivity and reflectivity within the context of a "down emitting" OLED.
  • the present invention is directed to the concept of an electrode for an OLED formed from multiple layers of metal and dielectric materials that can be ordered to produce a highly efficient electrode.
  • the layers of the electrode may be stacked such that different portions of the electrode fulfill the separate functionalities of ( 1 ) high electrical conductivity, (2) high electrical injection and (3) high optical transmission/reflection.
  • the present invention is directed to an OLED having a substrate, a first electrode formed on said substrate, at least one organic thin film layer formed on the first electrode, and a second electrode formed on the at least one organic thin film layer.
  • at least one of the first and second electrodes includes a plurality of electrode layers.
  • the plurality of electrode layers includes a thin film layer formed at least one of a metal and an oxide, and a multilayer reflector.
  • the thin film layer preferably has a thickness of less than 100A.
  • the multilayer reflector includes a plurality of layers.
  • the plurality of layers may include at least one metal layer and at least one dielectric material layer.
  • the plurality of layers preferably includes alternating layers of the at least one metal layer and the at least one dielectric material layer.
  • the first electrode includes the plurality of electrode layers.
  • the second electrode includes the plurality of electrode layers.
  • the plurality of electrode layers preferably includes at least one layer formed from a high electrical conductivity material.
  • the plurality of electrode layers preferably includes at least one layer formed from a high electrical injection material.
  • the plurality of electrode layers preferably includes at least one layer formed from a material having a high optical transmission.
  • the plurality of electrode layers preferably includes at least one layer formed from a material having a high optical reflection.
  • the present invention is also directed to an electrode for an OLED, the electrode includes a plurality of electrode layers, wherein the plurality of electrode layers includes a thin film layer formed at least one of a metal and an oxide, and a multilayer reflector.
  • the thin film layer has a thickness of less than 100 A.
  • the multilayer reflector includes a plurality of layers.
  • the plurality of layers includes at least one metal layer and at least one dielectric material layer.
  • the plurality of layers preferably includes alternating layers of the at least one metal layer and the at least one dielectric material layer.
  • Fig. 1 is a schematic view of a conventional OLED:
  • Fig. 2 is a schematic view of another conventional OLED
  • Fig. 3 is a schematic view of an upwardly emitting OLED according to an embodiment of the present invention.
  • Fig. 4 is a schematic view of a downwardly emitting OLED according to another embodiment of the present invention.
  • the OLED 20 in accordance with one embodiment of the present invention is illustrated in Fig. 3.
  • the OLED 20 includes a substrate 21.
  • a first electrode 22 is formed on the substrate 21.
  • At least one organic thin film layer 23 is formed on the first electrode 22.
  • a second electrode 24 is formed on the at least one organic thin film layer 23.
  • the OLED 20 is an upwardly emitting OLED. In an upwardly emitting OLED, light is transmitted through the second electrode 24.
  • the substrate 21 is formed from an opaque material (e.g., silicon).
  • the second electrode 24 is formed from a suitable light transmissive material to permit output of the OLED to exit away from the substrate 21 in the direction of the arrows illustrated in Fig. 3.
  • the first electrode 22 is formed from a plurality of layers.
  • a thin film layer 221 is in direct contact with the at least one organic thin film layer 23.
  • the layer 221 has a thickness of less than lOOA.
  • the layer 221 is formed from a material that promotes positive carrier injection into the at least one organic thin film layer 23.
  • the layer 221 is preferably formed from a metal or an oxide. Suitable metals include molybdenum, ruthenium and vanadium. The present invention, however, is not limited to these materials, rather metals exhibiting similar physical properties are considered to be well within the scope of the present invention.
  • the layer 221 may be formed from oxides of molybdenum, ruthenium, and vanadium or other suitable metals. ITO, aluminum-zinc oxide and mixtures thereof are suitable materials for layer 221.
  • alternating layers of metals and dielectric materials 222, 223, 224. 225 forming a high-performance, multilayer reflector 220.
  • This reflector layer 220 has ideal reflectivities, omnidirectionality and low loss, in what is known as a "dielectric omnidirectional reflector.”
  • This composite reflector is tuned to the wavelength of electroluminescence emission by suitable choices of the alternating metal and dielectric materials.
  • the omnidirectional mirror combines the best properties of each by inhibiting energy losses through optical interference effects in the periodic, alternating structure.
  • a second embodiment of the present invention depicted a "downwardly emitting" OLED 30 is illustrated in Fig. 4 having a substrate 31.
  • the first electrode 32 is of the usual type, e.g., ITO. and the second electrode 34 is reflective.
  • a thin layer 341 is positioned adjacent to the at least one organic layer 33.
  • the layer 341 is a thin, transparent negative-carrier injector having a thickness of less than 1 OOA.
  • the layer 341 is preferably formed from codeposited layer of magnesium and silver.
  • a plurality of alternating layer 342, 343, 344 and 345 forming a high-performance, multilayer reflector 340 are formed on thin layer 341.
  • the multilayer reflector 340 may also serve as a protective layer for the thin metallic injector 341.

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

Cette invention concerne une électrode pour dispositif électroluminescent organique (OLED) (20) constitué par des couches multiples de métal et de matériaux diélectriques dont l'agencement permet d'obtenir une électrode (22) hautement efficace. L'empilement des couches peut être réalisé de telle manière que les différentes parties de l'électrode assure des fonctionnalités distinctes : conductivité électrique élevée, injection électrique élevée et transmission/réflexion optiques élevées.
PCT/US2000/011161 1999-04-28 2000-04-27 Dispositif d'electroluminescence organique avec element reflechissant hautement efficace Ceased WO2000065879A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13147599P 1999-04-28 1999-04-28
US60/131,475 1999-04-28

Publications (1)

Publication Number Publication Date
WO2000065879A1 true WO2000065879A1 (fr) 2000-11-02

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ID=22449631

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2000/011161 Ceased WO2000065879A1 (fr) 1999-04-28 2000-04-27 Dispositif d'electroluminescence organique avec element reflechissant hautement efficace

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Country Link
WO (1) WO2000065879A1 (fr)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6537688B2 (en) 2000-12-01 2003-03-25 Universal Display Corporation Adhesive sealed organic optoelectronic structures
US6569697B2 (en) 2001-08-20 2003-05-27 Universal Display Corporation Method of fabricating electrodes
US6576351B2 (en) 2001-02-16 2003-06-10 Universal Display Corporation Barrier region for optoelectronic devices
US6614057B2 (en) 2001-02-07 2003-09-02 Universal Display Corporation Sealed organic optoelectronic structures
US6624568B2 (en) 2001-03-28 2003-09-23 Universal Display Corporation Multilayer barrier region containing moisture- and oxygen-absorbing material for optoelectronic devices
US6664137B2 (en) 2001-03-29 2003-12-16 Universal Display Corporation Methods and structures for reducing lateral diffusion through cooperative barrier layers
WO2003052842A3 (fr) * 2001-11-06 2004-01-22 Universal Display Corp Structure d'encapsulation qui agit en tant que miroir multicouche
US7071615B2 (en) 2001-08-20 2006-07-04 Universal Display Corporation Transparent electrodes
EP1617493A3 (fr) * 2004-07-08 2007-04-18 Junji Kido Dispositif organique, diode organique électroluminescente et cellule solaire organique
US20130037723A1 (en) * 2010-04-26 2013-02-14 Koninklijke Philips Electronics N.V. X-ray detector with improved spatial gain uniformity and resolution and method of fabricating such x-ray detector
CN104124364A (zh) * 2013-04-24 2014-10-29 海洋王照明科技股份有限公司 一种有机电致发光器件及其制备方法
CN108281561A (zh) * 2017-01-05 2018-07-13 昆山工研院新型平板显示技术中心有限公司 一种电极及应用其的有机电致发光器件
EP3343660A4 (fr) * 2015-08-28 2019-05-15 Boe Technology Group Co. Ltd. Composant électroluminescent organique et son procédé de fabrication ainsi que dispositif d'affichage

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5405710A (en) * 1993-11-22 1995-04-11 At&T Corp. Article comprising microcavity light sources
US5635307A (en) * 1992-12-25 1997-06-03 Hitachi Maxell, Ltd. Thin-film electroluminescent element
US5674636A (en) * 1994-05-20 1997-10-07 Dodabalapur; Ananth Article comprising a microcavity light source
US5811833A (en) * 1996-12-23 1998-09-22 University Of So. Ca Electron transporting and light emitting layers based on organic free radicals
US5814416A (en) * 1996-04-10 1998-09-29 Lucent Technologies, Inc. Wavelength compensation for resonant cavity electroluminescent devices

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5635307A (en) * 1992-12-25 1997-06-03 Hitachi Maxell, Ltd. Thin-film electroluminescent element
US5405710A (en) * 1993-11-22 1995-04-11 At&T Corp. Article comprising microcavity light sources
US5674636A (en) * 1994-05-20 1997-10-07 Dodabalapur; Ananth Article comprising a microcavity light source
US5814416A (en) * 1996-04-10 1998-09-29 Lucent Technologies, Inc. Wavelength compensation for resonant cavity electroluminescent devices
US5811833A (en) * 1996-12-23 1998-09-22 University Of So. Ca Electron transporting and light emitting layers based on organic free radicals

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6537688B2 (en) 2000-12-01 2003-03-25 Universal Display Corporation Adhesive sealed organic optoelectronic structures
US6614057B2 (en) 2001-02-07 2003-09-02 Universal Display Corporation Sealed organic optoelectronic structures
US6576351B2 (en) 2001-02-16 2003-06-10 Universal Display Corporation Barrier region for optoelectronic devices
US6624568B2 (en) 2001-03-28 2003-09-23 Universal Display Corporation Multilayer barrier region containing moisture- and oxygen-absorbing material for optoelectronic devices
US7683534B2 (en) 2001-03-29 2010-03-23 Universal Display Corporation Methods and structures for reducing lateral diffusion through cooperative barrier layers
US6664137B2 (en) 2001-03-29 2003-12-16 Universal Display Corporation Methods and structures for reducing lateral diffusion through cooperative barrier layers
US7187119B2 (en) 2001-03-29 2007-03-06 Universal Display Corporation Methods and structures for reducing lateral diffusion through cooperative barrier layers
US6569697B2 (en) 2001-08-20 2003-05-27 Universal Display Corporation Method of fabricating electrodes
US7071615B2 (en) 2001-08-20 2006-07-04 Universal Display Corporation Transparent electrodes
WO2003052842A3 (fr) * 2001-11-06 2004-01-22 Universal Display Corp Structure d'encapsulation qui agit en tant que miroir multicouche
US6888305B2 (en) 2001-11-06 2005-05-03 Universal Display Corporation Encapsulation structure that acts as a multilayer mirror
CN100435376C (zh) * 2001-11-06 2008-11-19 通用显示有限公司 充当多层镜面的封装结构
EP1617493A3 (fr) * 2004-07-08 2007-04-18 Junji Kido Dispositif organique, diode organique électroluminescente et cellule solaire organique
KR100880881B1 (ko) * 2004-07-08 2009-01-30 미츠비시 쥬고교 가부시키가이샤 유기소자들, 유기전계발광소자들 및 유기태양전지들
US8101857B2 (en) 2004-07-08 2012-01-24 Junji Kido Organic devices, organic electroluminescent devices and organic solar cells
US20130037723A1 (en) * 2010-04-26 2013-02-14 Koninklijke Philips Electronics N.V. X-ray detector with improved spatial gain uniformity and resolution and method of fabricating such x-ray detector
US9995831B2 (en) * 2010-04-26 2018-06-12 Koninklijke Philips N.V. X-ray detector with improved spatial gain uniformity and resolution and method of fabricating such X-ray detector
CN104124364A (zh) * 2013-04-24 2014-10-29 海洋王照明科技股份有限公司 一种有机电致发光器件及其制备方法
EP3343660A4 (fr) * 2015-08-28 2019-05-15 Boe Technology Group Co. Ltd. Composant électroluminescent organique et son procédé de fabrication ainsi que dispositif d'affichage
US10566565B2 (en) 2015-08-28 2020-02-18 Boe Technology Group Co., Ltd. Organic light emitting device and method of fabricating the same, and display device
CN108281561A (zh) * 2017-01-05 2018-07-13 昆山工研院新型平板显示技术中心有限公司 一种电极及应用其的有机电致发光器件

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