WO2000065651A1 - Semiconductor integrated circuit - Google Patents
Semiconductor integrated circuit Download PDFInfo
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- WO2000065651A1 WO2000065651A1 PCT/JP1999/002221 JP9902221W WO0065651A1 WO 2000065651 A1 WO2000065651 A1 WO 2000065651A1 JP 9902221 W JP9902221 W JP 9902221W WO 0065651 A1 WO0065651 A1 WO 0065651A1
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- circuit
- semiconductor integrated
- clock signal
- integrated circuit
- edge
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- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
- G06F1/04—Generating or distributing clock signals or signals derived directly therefrom
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K5/15—Arrangements in which pulses are delivered at different times at several outputs, i.e. pulse distributors
- H03K5/151—Arrangements in which pulses are delivered at different times at several outputs, i.e. pulse distributors with two complementary outputs
- H03K5/1515—Arrangements in which pulses are delivered at different times at several outputs, i.e. pulse distributors with two complementary outputs non-overlapping
Definitions
- the present invention relates to a semiconductor integrated circuit device, and more particularly to a technology for reducing harmonic noise in a specific frequency band.
- the present invention is applied to a device mounted on an automobile and the like, so-called EMI (Electromagnetic) for a radio frequency band. Interference) It is related to technology effective for reduction. Background art
- One technique for reducing noise is to lower the power supply voltage of a semiconductor integrated circuit device. According to this technology, it is possible to reduce the noise generated from the wiring path by lowering the signal level output from the semiconductor integrated circuit device to the mounting printed circuit board wiring, and also to reduce the operation of the semiconductor integrated circuit device. Since the current can be reduced, noise from the power supply path can also be reduced. However, with this technology alone, noise suppression is required in order to limit the operating power supply voltage at which the circuit can operate and to achieve the required operating speed regardless of the decrease in the load driving force of the circuit. Limits arise.
- the frequency of an operation clock signal As another technique, there is a technique of changing the frequency of an operation clock signal. This technique is disclosed, for example, in Japanese Patent Application Laid-Open No. Hei 7-235858.
- the frequency of the clock signal of the semiconductor integrated circuit device is changed within a predetermined range every predetermined time.
- the frequency of the fundamental noise is varied within a predetermined range, and the range of the frequency component where the harmonic noise occurs is expanded, thereby averaging the electromagnetic noise generated from the semiconductor integrated circuit device. By doing so, the generated electromagnetic wave noise is reduced.
- there is a technique for irregularly generating a delay in a mouthpiece signal As still another technique, there is a technique for irregularly generating a delay in a mouthpiece signal.
- an object of the present invention is to reduce harmonic noise generated in a specific frequency band among the harmonic noise generated from a semiconductor integrated circuit device.
- Another object of the present invention is to make it possible to use the conventional clock signal design technology as it is, and to easily realize reduction of harmonic noise or subharmonic noise occurring in a specific frequency band. is there.
- Another object of the present invention is to provide a semiconductor integrated circuit device capable of relatively reducing power supply current noise corresponding to harmonic noise generated in a radio frequency band among harmonic noise with respect to a fundamental frequency of a clock signal.
- a semiconductor integrated circuit device includes a logic circuit block that operates in synchronization with a clock signal, and a timing adjustment circuit that adjusts a phase difference of a current flowing through a power supply wiring.
- the logic circuit block operates in synchronization with the clock signal, so that an operation current flows in synchronization with the clock signal.
- the clock signal goes to the first transition state, then to the second transition state, then to the first transition state, and so on, periodically and alternately to the first and second transition states. Can be considered to be adopted.
- a logic circuit block is a circuit that operates in synchronization with a first transition state of a clock signal (hereinafter, referred to as a first circuit) because it is a circuit that operates in synchronization with a clock signal. And a circuit that operates in synchronization with the transition state (hereinafter, referred to as a second circuit).
- the timing at which the operating current flows through the logic circuit block is synchronized with the first transition state and the second transition state of the clock signal.
- the operating current of the logic circuit block flows to the power supply wiring of the semiconductor integrated circuit device, and changes the power supply current.
- the evening adjustment circuit includes a power supply current generated in synchronization with the first transition state of the clock signal and a power supply current generated in synchronization with the second transition state of the clock signal. It operates so as to adjust the phase difference between.
- the distribution of the harmonic noise component in the power supply current corresponding to the repetition of the first transition state and the second transition state is changed. If the time from the first transition state to the second transition state of the clock signal is substantially equal to the time from the second transition state to the first transition state, the harmonic noise caused by the change in the power supply current will be , The even harmonic noise with respect to the clock signal has a relatively large level.
- the timing adjustment circuit reduces a predetermined order harmonic noise level.
- the evening adjustment circuit can take various configurations to conform to the configuration of the logic circuit block.
- the logic circuit block regards the rising edge of the clock signal as the first transition state and operates in synchronization with it.
- the logic group considers the falling edge of the clock signal as the second transition state and operates in synchronization with it.
- the current flowing through the power supply wiring of the semiconductor integrated circuit device flows in synchronization with the rising edge and the falling edge of the clock signal.
- the evening adjustment circuit changes the phase difference between the rising edge and the falling edge of the quick signal for operating the semiconductor integrated circuit device so as to change the phase difference of the current flowing through the power supply wiring.
- the clock signal operated by the semiconductor integrated circuit device is set such that the duty ratio is substantially 50%, that is, the phase difference between the rising edge and the falling edge of the clock signal is 1/2. Accordingly, the phase difference of the current flowing through the power supply wiring is also reduced to 1/2.
- the change in the phase difference between the rising edge and the falling edge of the clock signal by the timing adjustment circuit is not particularly limited, but may be changed by a circuit configuration that delays the rising edge by a predetermined time or This is enabled by a circuit configuration that delays the edge by a predetermined time. If necessary, the rising and falling edges may be delayed by different times, respectively. As described above, the rising edge and the falling edge of the clock signal are delayed for a predetermined time by the rising edge and the falling edge of the clock signal by the evening adjusting circuit, so that the rising edge and the falling edge of the clock signal are delayed.
- the edge phase difference is different from 1/2.
- the current flowing through the power supply wiring by the circuit group that operates in synchronization with the rising edge and the power supply by the circuit group that operates in synchronization with the falling edge is made different from 1 Z 2.
- the phase difference between the current flowing through the power supply wiring when the circuit group operates in synchronization with the rising edge and the current flowing through the power supply wiring when the circuit group operates in synchronization with the falling edge is 1/2. If the phase difference is different from that of the above, the harmonic noise in a specific frequency band will be reduced as compared with when the phase difference is 1/2.
- the present invention is further clarified by comparison with the above-described technique for changing the frequency of the operation clock signal and the technique for irregularly generating a delay in the clock signal. It has the characteristic that harmonic noise in the frequency band can be reduced.
- the present invention also provides a circuit group that operates in synchronization with the first transition of the clock signal and a circuit group that operates in synchronization with the second transition, as is evident from the comparison with the above-described technique that irregularly delays the clock signal. Circuit groups that can operate with a fixed period determined by the period of the clock signal without depending on the phase adjustment by the timing adjustment circuit. The feature is that the operation timing margin can be large and the change can be small. The small change in the operating margin Each circuit group can be operated with a small operation margin, thereby making it possible to prevent each circuit from being improved in performance.
- the timing adjustment circuit can adopt a configuration suitable for a configuration in which the logic circuit block uses a plurality of internal clock signals having different phases.
- the operation of each circuit group causes a current to flow through the power supply wiring with a certain phase difference. Because it can be considered. In this case, it is possible to reduce harmonic noise in a specific frequency band by changing the phase difference of the current flowing through the power supply wiring.
- a plurality of internal clock signals can be obtained.
- the phase difference between the rising and falling edges is adjusted.
- the timing adjustment circuit connected to each internal clock signal does not need to change the phase difference between the rising edge and the falling edge for all the internal clock signals, or needs to change the phase difference for each internal clock signal.
- the phase difference may be different, and the semiconductor integrated circuit device as a whole may be in such a state that the phase difference of the current flowing through the power supply wiring is changed from 1/2.
- the timing adjustment circuit generates a plurality of clock signals in which the phase difference between the rising edge and the falling edge is changed so that the phase difference of the current flowing through the semiconductor integrated circuit device becomes a different phase difference.
- a selection circuit for selecting a clock signal having a specific phase difference from the plurality of clock signals a phase difference of a current flowing through the semiconductor integrated circuit device can be selected, and a frequency band to be reduced can be selected.
- the harmonic noise of It becomes possible. This facilitates the control of suppressing harmonic noise in a specific frequency band when the period of the clock signal is changed.
- the timing adjustment circuit has a setting circuit for setting a phase difference between a rising edge and a falling edge of the clock signal
- the semiconductor integrated circuit can be freely controlled by the phase difference control data set in the setting circuit. It may be arranged to determine the phase difference of the current flowing through the device.
- the setting circuit is configured by a control register in which the phase difference control data is set and controlled by a central processing unit in the microcomputer, or It may be substantially constituted by a storage circuit that can be referred to by the central processing unit.
- the central processing unit sets the above setting circuit, and the timing adjustment circuit sets the phase difference between the rising edge and the falling edge of the clock signal so that the phase difference specified by the setting circuit becomes the same.
- the semiconductor integrated circuit device having the timing adjustment circuit is not limited to being formed on one chip semiconductor substrate, but is a multi-chip data processing system composed of a plurality of semiconductor chips. It may be.
- each of the semiconductor integrated circuit devices has the above-described timing adjustment circuit, and in each of the semiconductor integrated circuit devices, changes the phase difference of the current flowing through the power supply wiring, thereby causing a harmonic generated in a specific frequency band. By reducing noise, it becomes possible to reduce harmonic noise that occurs in a specific frequency band as a whole data processing system.
- each of the semiconductor integrated circuit devices may not have the above-mentioned timing adjustment circuit, and may have the above-mentioned timing adjustment circuit as a data processing system.
- Each of them as a data processing system
- the semiconductor integrated circuit devices can be classified into a plurality of groups that operate in synchronization with the clock signal, and the current flowing on the power supply wiring supplied to the semiconductor integrated circuit devices belonging to each group has a certain phase difference
- the data processing system has the above-mentioned timing adjustment circuit, and each of the semiconductor integrated circuit devices changes the phase difference between the clock signals operated synchronously, thereby identifying the data processing system. It is possible to reduce the harmonic noise of the frequency band.
- FIG. 1 is an example of an overall block diagram of a semiconductor integrated circuit device.
- FIG. 2 is a waveform diagram of a single-phase clock signal.
- FIG. 3 is a characteristic diagram showing an example of a change in the noise intensity coefficient of the first to sixth harmonic noises.
- FIG. 4 is a waveform diagram of a multiphase clock signal.
- FIG. 5 is a circuit diagram showing an example of a circuit for generating a two-phase non-overlapping clock signal.
- FIG. 6 is a graph of noise intensity count for each harmonic.
- FIG. 7 is a noise distribution diagram showing an example of a noise distribution of the semiconductor integrated circuit device.
- FIG. 8 is a characteristic diagram showing the intensity of the third to fifth harmonic noises falling within the FM radio frequency band of 60 MHz to 100 MHz.
- FIG. 4 is a characteristic diagram showing strength.
- FIG. 10 is a schematic diagram for explaining electromagnetic noise generated from a device on which a semiconductor integrated circuit device is mounted.
- FIG. 11 is a schematic diagram for explaining electromagnetic wave noise generated from the data processing system.
- FIG. 12 is a circuit diagram showing a first embodiment of the evening adjustment circuit according to the present invention.
- FIG. 13 is a waveform chart showing an example of an output signal waveform of the timing adjustment circuit of FIG.
- FIG. 14 is a circuit diagram of a clock signal selection circuit used in a first example of the timing adjustment circuit according to the present invention.
- FIG. 15 is an explanatory diagram of a register which is a first example of a selection signal forming circuit for forming the selection control signals S1 to S3.
- FIG. 16 is an explanatory diagram showing a manner of selecting the clock signals CK d1 to CK d3 with respect to the values of the selection control signals S 1 to S 3.
- FIG. 17 is an explanatory diagram of a register which is a second example of the selection signal forming circuit for forming the selection control signals S1 to S3.
- FIG. 18 is a logic circuit diagram showing an example of a decoder for decoding the outputs S d A and S dB of the register shown in FIG. 17 to form signals S 1 to S 3.
- FIG. 19 is an explanatory diagram showing an example of a selection mode of the clock signals CKd1 to CKd3 with respect to the values of the decoded signals S1 to S3 of the resist output SdA and Sdb.
- FIG. 20 is a block diagram showing a second example of the timing adjustment circuit according to the present invention.
- FIG. 21 is a waveform diagram showing an example of the output waveform of the evening adjustment circuit of FIG.
- FIG. 22 is a block diagram of a semiconductor integrated circuit device employing a timing adjustment circuit.
- FIG. 23 is a block diagram showing another configuration of a semiconductor integrated circuit device employing a timing adjustment circuit.
- FIG. 24 is a block diagram showing still another configuration of the semiconductor integrated circuit device employing the evening adjustment circuit.
- FIG. 25 is a block diagram showing a configuration of a data processing device employing a timing adjustment circuit.
- FIG. 26 is a schematic view of an automobile equipped with a data processing device using the semiconductor integrated circuit device according to the present invention.
- FIG. 1 is a block diagram of a semiconductor integrated circuit device MPC of an embodiment.
- the semiconductor integrated circuit device MPC is formed on a single semiconductor substrate such as single crystal silicon by a known CMOS integrated circuit device manufacturing technology.
- the semiconductor integrated circuit device MPC shown in the figure is composed of a central processing unit CB1, an arithmetic unit CB2, a direct memory access controller CB6, an interrupt controller CB3, a first and a second peripheral so as to constitute a microprocessor.
- the circuit includes IOP1 to IOP4, a clock pulse generation circuit CPG, and a timing adjustment circuit TADJ.
- Each circuit or circuit block in the figure is coupled to the illustrated data buses DBS 1 and DBS 2, the address buses ABS 1 and ABS 2, and the control bus CBS.
- I / O port circuits IOP 1 to IOP 4 Are connected to external terminals T a1 to T dn of the semiconductor integrated circuit device MPC.
- Each circuit or circuit block shown in the figure is connected to an external terminal for receiving power via a power supply line (not shown) of the semiconductor integrated circuit device MPC.
- the clock signal output via the evening adjustment circuit TADJ is connected to all circuit blocks via a clock signal line (not shown).
- the illustrated central processing unit CB1, arithmetic unit CB2, interrupt controller CB3, etc. receive the clock signal supplied via the timing adjustment circuit TADJ as an operation clock signal. Construct a circuit block.
- Electromagnetic noise that can be considered in the semiconductor integrated circuit device MPC includes electromagnetic noise generated when an internal logic circuit operates in synchronization with a clock signal and current flows through the power supply wiring, and an internal bus noise. Electromagnetic noise caused by signal current flowing through signal wiring such as AB S1, AB S2, DB S1, and DB S2, and input / output port circuits IOP1 to IOP4 of semiconductor integrated circuit devices. Electromagnetic noise generated by charging / discharging the stray capacitance of each of the terminals to give a signal to the external terminals T a1 to T dn which are the input / output terminals of the terminals.
- noises other than the noise related to the power supply wiring may be understood to have relatively small levels. That is, the input / output port circuits IOP1 to IOP4 receive various signals to be processed by the central processing unit CB1 in accordance with the program through predetermined ones of the input / output terminals Ta1 to Tdn, and Since various signals formed in accordance with the execution of the program by the central processing unit CB 1 are output to predetermined ones of the terminals, the signals are generally compared with the operation speed of a circuit such as the central processing unit. Therefore, the operation speed is set to be low.
- the electromagnetic wave noise related to the input / output terminals T a1 to T dn may be regarded as having a low frequency and a low level because the signal change speed of those terminals is relatively slow.
- Electromagnetic noise generated by signal wiring such as internal bus wiring has a relatively high frequency due to the high speed of signals to be transmitted by those wirings.
- these signal wirings exclusively transmit signals only, and can take a fine wiring configuration. Therefore, the ratio of the signal wirings to the entire semiconductor integrated circuit device is relatively small.
- the power amount corresponding to the signal to be handled by these signal lines is smaller than the power amount in the power supply line. Under these circumstances, it can be considered that the electromagnetic noise caused by the signal wiring also has a relatively small level.
- the electromagnetic noise generated from the power supply wiring is such that the power supply wiring is connected to all the circuit blocks in the semiconductor integrated circuit device and handles the operating current for a circuit such as a clock signal synchronous type.
- a circuit such as a clock signal synchronous type.
- a high frequency and a high level corresponding to the click signal That is, a plurality of circuit groups connected via the illustrated bus are operated at the same time under timing control by a clock signal. As a result, a large operating current synchronized with the clock signal flows through the power supply wiring.
- the power supply current that is, the operating current of the circuit block shown in FIG. 0/5 51
- a logic circuit block consumes current when a plurality of logic gate circuits and arithmetic circuits, such as those present therein, are operated by a clock signal.
- a kind of sequential circuit is formed by a connection such as a cascade connection of a plurality of logic gate circuits and arithmetic circuits, the sequential circuit has a plurality of cascaded connections within it under operation control by a clock signal. It operates so that the signal propagates to the circuit one after another. Thus, the sequential circuit consumes current for a period corresponding to the signal propagation delay time of the cascade connection circuit.
- a unit circuit such as a unit logic gate circuit in a circuit block, often has an output at its output node, along with a load drive current to provide a signal to the load, such as stray or parasitic capacitance connected to its output node.
- a so-called through current also occurs because the output elements, such as p-channel MOSFETs and n-channel MOSFETs for providing signals, conduct simultaneously at the time of signal transition.
- the shoot-through current also constitutes a current substantially synchronized with the clock signal as it occurs in connection with the signal transition.
- the operating current of the circuit block changes with a relatively large level and time according to the clock signal.
- Such an operating current is supplied from the power supply wiring. That is, a current flows through the power supply wiring in synchronization with the clock signal, and high-frequency electromagnetic noise is emitted from the entire semiconductor integrated circuit device. Since the current flowing through the power supply wiring is supplied from a power supply device outside the semiconductor integrated circuit device, Not only the device, but also the whole system using the semiconductor integrated circuit device is a factor of generating high-frequency electromagnetic wave noise.
- Electromagnetic noise based on the current flowing in synchronization with the clock signal, the period of the clock signal to a frequency (hereinafter, f. And shown) not only the fundamental wave noise with, frequency number 2 f 0, frequency 3 f.
- Electromagnetic noise having a frequency such as harmonic noise or frequency f. / 2, frequency f. Includes electromagnetic noise with frequencies such as 3 or subharmonic noise
- FIG. 2 shows an example of a single-phase clock signal waveform in which the semiconductor integrated circuit device operates.
- (A) of FIG. 2 shows the voltage change of the clock signal, the horizontal axis shows time, and the vertical axis shows the voltage intensity.
- FIG. 2 (b) shows the power supply wiring corresponding to the above clock signal.
- the horizontal axis indicates time and the vertical axis indicates current intensity.
- FIG. 2 shows that the semiconductor integrated circuit device MPC detects the rising edge of the clock signal (Vi ⁇ And the falling edge of the clock signal (Vhigh
- Vi ⁇ rising edge of the clock signal
- Vhigh the rising edge of the clock signal
- the semiconductor integrated circuit device MPC includes a circuit that operates in synchronization with the rise of the clock signal (rise response circuit) and a circuit that operates in synchronization with the fall (fall response circuit). . Differences in the current waveform that flows in synchronization with the rising edge of the clock signal and the current waveform that flows in synchronization with the falling edge of the clock signal occur due to the difference in configuration required for the rising response circuit and the falling response circuit. .
- R shows the phase difference of g R (t) and g F (t).
- R 1/2.
- T is the period of the clock signal, which is 1 / f.
- G (nf 0 ) G R (nf 0 ) + e xp (-j nw 0 RT) G R (nf 0 )
- FIG. 3 shows an example of a change in the noise intensity coefficient of the first to sixth harmonic noise.
- the vertical axis represents the noise intensity coefficient
- the horizontal axis represents the phase difference.
- the right side of Fig. 3 shows the correspondence (legend) between the sign assigned to the noise change curve and the harmonic order number.
- the curve with the square sign is the change curve of the first harmonic noise
- the curve with the round sign is the change curve of the second harmonic noise.
- the understanding is easy. Therefore, the difference between the current waveform caused by the operation of the rising response circuit and the current waveform caused by the operation of the falling response circuit is relatively small, and the change in the current waveform corresponding to the repetition of the clock signal is also relatively small. An example is shown.
- the current waveform changes according to the difference between the rising response circuit and the falling response circuit.
- a circuit such as a logic operation circuit configured to receive an input signal at the rising timing of a clock signal and output an output signal at the falling timing of a clock signal is functionally functional. It has both a rising response circuit and a falling response circuit. In this case, the signal input and the signal output are different circuit operations. Therefore, it is not guaranteed that the power supply current when the clock signal rises and the power supply current when it falls have the same waveform.
- the current waveform may also change in multiple cycles of the clock signal, depending on the sequential operation corresponding to the program execution of the central processing unit CB 1 itself and the sequential operation of the circuit controlled by the central processing unit CB 1 . That is, the power supply current changes over a period longer than the period of the clock signal.
- FIG. 4 shows an example of the waveforms of the two-phase non-overlapping clock signals ⁇ 1 and ⁇ 2 formed together with the basic clock signal. That is, (a-1) in FIG. 4 is the period T or the fundamental frequency f. Fig. 4 (a-2) shows the voltage change of the ⁇ 1 clock signal of the two-phase clock signal. (a-3) shows the voltage change of the two-phase clock signal of the two-phase clock signal. It is. In FIGS. 4 (a-1) to 4 (a-3), the horizontal axis represents time, and the vertical axis represents voltage intensity.
- FIG. 4 (b) shows an example of a change in the current flowing through the power supply wiring corresponding to the ⁇ 1 clock signal and the ⁇ 2 clock signal.
- FIG. 5 shows an example of a circuit for generating the above two-phase non-overlapping signal.
- the current waveform illustrated in (b) of FIG. 4 although not essential, operates in synchronization with the rising edge of the ⁇ 1 clock signal and operates in synchronization with the falling edge of the ⁇ 2 clock signal
- the circuits constitute the first group, and the circuit that operates in synchronization with the falling edge of the ⁇ 1 clock signal and the circuit that operates in synchronization with the rising edge of the ⁇ 2 clock signal are considered to form the second group. It is changed with the form that is done. Under this power supply current, the frequency 2 f is generated by the current flowing when the first group operates and the current flowing when the second group operates.
- R shows the phase difference of g R (t) and g F (t).
- R 1/2.
- T is the period of the basic clock signal, l / f. Becomes At this time, the nth harmonic noise generated by the current flowing through the power supply wiring Frequency spectrum G (nf.)
- g R (t) of the frequency spectrum G R (nf.) G R (nf 0 ) + exp (-j nw 0 RT) G R (nf 0 )
- the noise component can be expressed as an equation.
- the device in the case of a semiconductor integrated circuit device operated by a multi-phase clock signal, it may be possible to classify the device into three or more groups in the same manner as in the above-described two groups, but even in such a case, there are various cases.
- the sum of the current flowing for each group is the current flowing in the power supply wiring, and the noise can be captured in the same manner as described above.
- a current flowing through the power supply wiring of the semiconductor integrated circuit device MPC is treated as a combination of a plurality of currents synchronized with a clock signal, and generated in a specific frequency band by changing a phase difference between the respective currents. Harmonic noise or subharmonic noise.
- Equation (4-2) The change in the intensity of harmonic noise or subharmonic noise generated in a specific frequency band by changing the phase difference between the currents is expressed by Equation (4-2).
- both the phase difference between the rising edge and the falling edge of the ⁇ 1 clock signal and the phase difference between the falling edge and the rising edge of the ⁇ 2 clock signal are calculated. by such a value that 1/3 is, the operation timing of the circuit of the second group also changes, that is change the value like 1/3 even phase difference of currents g R and g F Obviously,
- FIG. 6 is, g R and g retardation R 0.2 50 F, 0.375, 0.4 1 7,
- the semiconductor integrated circuit device MPC has the clock signal frequency f. Is a relatively high frequency, such as 2 OMHz. Note that the drawing does not show a frequency band of 30 MHz or less, which is twice the frequency of the clock signal or less.
- Fig. 7 shows a measurement example when the phase difference between the rising edge and the falling edge of the clock signal is 1/2
- Fig. 8 shows a measurement example when the phase difference is about 2/5 (42%). is there.
- FIG. 8 shows that the intensity of the third to fifth harmonic noise, which falls into the FM radio frequency band from 60 MHz to 100 MHz, is reduced by about 10 dB.
- FIG. 9 is a graph showing the intensity of the second to sixth harmonic noise when the phase difference between the rising edge and the falling edge of the clock signal is changed. It is clear from this graph that the noise intensity changes due to the phase difference for each harmonic.
- FIG. 10 shows an example of radiation of electromagnetic wave noise generated from a configuration in which semiconductor electronic components in which a semiconductor integrated circuit device MPC is sealed with a resin are mounted on a mounting substrate such as a print substrate.
- a wiring board 66 for mounting electronic components, such as a printed board, is not particularly limited. It is composed of a multilayer wiring board. This type of multilayer wiring board enables supply of power supply current to electronic components 63 including semiconductor integrated circuit devices operating at relatively high frequency under relatively low power supply impedance. An increase in the size of the substrate itself, an increase in the length of the signal wiring 65, and undesired electrical coupling between the signal wirings 65 are avoided as much as possible.
- the semiconductor electronic component 63 is a resin package component in which a semiconductor substrate such as a silicon chip 64 constituting the semiconductor integrated circuit device MPC is sealed with a resin. And formed on the semiconductor substrate.
- the power supply wiring (Vcc, Gnd) connected to the circuit is connected to the power supply wiring 61 formed on the printed circuit board 66 and the like via the lead (pin) which is the connection terminal 62 of the semiconductor electronic component 63, It is supplied with power supply current.
- the current flowing through the power supply wiring is supplied from a power supply unit (not shown) coupled to the printed circuit board to the power supply wiring 61 on the printed circuit board and the semiconductor integrated circuit. It is supplied via connection terminals 62 of the circuit arrangement.
- the electromagnetic wave noise generated by the current flowing through the power supply wiring 61 due to the operation of the circuit described above is generated not only by the power supply wiring (Vcc, Gnd) on the semiconductor substrate, but also by the connection terminal 62 and the power supply wiring 6 on the printed circuit board. It has the possibility of being radiated from one.
- FIG. 11 shows an example of electromagnetic wave noise generated from a data processing system using the semiconductor integrated circuit device MPC.
- two power supply terminals, Vcc and Gnd are disclosed to avoid complication of the drawing, but in the semiconductor integrated circuit device MPC constituting the microcomputer 73, the power supply terminals are not shown.
- a plurality of pairs of one power supply terminal Vcc and one reference potential side power supply terminal Gnd are set so that various circuits in the integrated circuit device perform desired operations. Even if such a plurality of power supply terminals are set, they are regarded as the power supply terminals of the present invention in terms of electromagnetic noise.
- Microprocessor 73 dryno IC 74-76, RAM7 1-7
- Semiconductor integrated circuit devices such as 2 are connected to power supply wiring (V cc and Gnd), which operate in synchronization with the clock signal CK.
- V cc and Gnd power supply wiring
- CK clock signal
- a current also flows through the power supply wiring on the printed circuit board of the data processing system connected to these semiconductor integrated circuit devices in synchronization with a clock signal for operating the semiconductor integrated circuit device, and electromagnetic wave noise is generated. What happens You.
- the data processing system shown in FIG. 11 is provided with connection connectors A, B, and C for signal output, which are respectively coupled to dryno ICs 76, 75, and 74.
- the electronic system is provided with so-called noise countermeasure electronic components such as a bypass capacitor which is connected between power supply wires near a power supply terminal of the semiconductor integrated circuit device on a mounting board such as a printed board. Can be This minimizes noise on the power supply wiring on the mounting board.
- electronic components for noise suppression are effective in reducing the amount of noise, but they cannot reduce the amount of noise to zero. Therefore, the semiconductor integrated circuit device of the present invention becomes effective.
- a specific circuit example of the evening adjustment circuit applied to the timing adjustment circuit TADJ in the semiconductor integrated circuit device MPC of FIG. 1 will be described.
- the basic clock signal for evening adjustment is supplied from the clock pulse generator CPG in FIG.
- the clock pulse generation circuit CPG in FIG. 1 is not particularly limited, but a self-propelled oscillation circuit, a waveform shaping circuit composed of an inverter circuit receiving the output, and a waveform shaping circuit. And a frequency dividing circuit receiving the output.
- the oscillation frequency of the oscillation circuit in the circuit CPG is set relatively accurately by a ceramic oscillator or a crystal oscillator connected to an external terminal (not shown) of the semiconductor integrated circuit device MPC.
- the waveform shaping circuit forms an oscillation signal having a waveform suitable as a pulse signal based on the oscillation signal output from the oscillation circuit.
- the frequency divider divides the oscillation signal to generate a clock signal CK and a relatively low frequency peripheral circuit clock signal for the operation of the input / output ports IOP1 to IOP4 in FIG.
- the clock signal CK and the clock signal (not shown) inverted in phase from the clock signal CK rise.
- the phase difference between the leading edge and the falling edge is set to substantially 1/2.
- the evening adjustment circuit TADJ adjusts the timing of the clock signal CK of the clock signal CK supplied from the clock pulse generation circuit CPG and the clock signal inverted from the clock signal CK. It is configured as follows.
- FIG. 12 shows an example of a timing adjustment element circuit 100 constituting the timing adjustment circuit TADJ
- FIG. 13 shows an example of the output signal waveform. It should be noted that the evening adjustment circuit TADJ can be constituted by only the timing adjustment element circuit 100.
- the circuit 100 shown in FIG. 12 has delay circuits d1 to d4, a NAND gate circuit Gl, NOR gate circuits G2 and G3, and an inverter circuit IV1 to IV3.
- the clock signal CK dl obtained via the inverter circuit IV 1 is delayed by the delay circuit d 1 by d 1 at the rising edge
- the clock signal CK d 2 obtained via the inverter circuit IV 2 d is the falling edge by the delay circuit d 2 is caused a delay of only d 2
- the clock signal CK d 3 obtained through Lee members evening circuit IV 3 is the rising edge by the delay circuit d 3 and d 4 3.
- Delay the falling edge by d4 and make the phase difference between the rising edge and the falling edge different from 1/2.
- the current g R that flows when the circuit operates at the rising edge of the peak signal is output.
- the phase difference of the current g F flowing by the operation of the circuit element at the falling edge of the clock signal can be changed from 1/2.
- the delay time of the delay circuit in the timing adjustment circuit is set in accordance with the frequency at which the semiconductor integrated circuit device MPC operates and the order of the harmonic noise corresponding to the frequency band in which the harmonic noise is to be reduced. By setting, it is possible to reduce electromagnetic noise generated in a specific frequency band. And have you to timing adjustment element circuit 1 0 0 shown in the first FIG. 2, but to generate a three clock signals of the clock signal CK d i to CK d 3, Ya number of generated click-locking signal The method of generating the delay time and the mouth signal can be changed.
- FIG. 14 shows an example of a selection circuit (also referred to as a multiplexer) 101 for selecting one clock signal from a plurality of clock signals generated by the circuit of FIG.
- the multiplexer 101 shown in the figure includes select gate circuits G4 to G6 whose operations are controlled by select control signals S1 to S3.
- the multiplexer 1 0 1, of the first 2 clock signal CK dl to clock signal CK d 3 generated by timing adjustment element circuit 1 00 shown in FIG, Akutibu a Jo of the selection control signals S 1 to S 3
- the clock signal selected by the active signal is output as CK sei . Only one of the selection control signals S1 to S3 may be made active by a physical switch mechanism (not shown). Use of the configuration is attempted.
- FIG. 15 shows a first example of a selection signal forming circuit for forming the selection control signals S1 to S3.
- the selection signal forming circuit is capable of setting contents to be held in a programmable manner, and constitutes an example of a setting circuit for instructing a timing adjustment amount based on the held contents.
- the selection signal forming circuit shown in FIG. 15 has a specific address selected by the address bus ABS2 of the semiconductor integrated circuit device of FIG. 1, and the data from the data bus DBS2 of FIG. 1 in the address selection state. It consists of a 1-bit register RS1 to RS3.
- FIG. 16 exemplifies a manner of selecting the clock signals CK dl to CK d 3 with respect to the values of the selection control signals S 1 to S 3.
- FIG. 17 shows a second example of the selection signal forming circuit.
- the second example as in the first example, there are one-bit registers R s dA and R s dB which are initialized by the address bus ABS 2 and the data bus DBS 2.
- the outputs S dA and S dB of the register are supplied to a 2-bit decoder composed of inverter circuits IV 4 and IV 5 and AND gate circuits G 7 to G 9 shown in FIG.
- the signals are converted into selection signals S1 to S3.
- Output S dA of the first 9 FIG Regis evening, selected aspects of the clock signal CK dl to CK d 3 for the values of signals S 1 to S 3 is obtained by decoding the S d B are shown examples.
- the symbol ⁇ means that the value in that column is ignored.
- FIG. 20 shows another example of a timing adjustment circuit TAD J using a digital delay circuit.
- FIG. 21 shows an example of the output waveform of the timing adjustment circuit of FIG.
- the basic clock signal f ck receiving, the basic clock signal f e k by the frequency ⁇ control has been eight times periodic clock signal f from the pulse generator CPG as described above.
- the control oscillation circuit C scSC that generates sc , the count value register CCR, and the basic clock signal f ck rise to the initial state by the rise of the clock signal, and the eight-times-delayed clock signal f from the control oscillation circuit C 0 SC.
- Control oscillator circuit The designation of the multiplier value of the n-times cycle clock signal to be generated by the COSC and the value of the count register CCR is not particularly limited, but the semiconductor integrated circuit device MPC shown in FIG. If it is a micro-computer, use the control register controlled by the central processing unit CB 1 or specify the contents to be specified for the register in the storage circuit that can be referenced by the central processing unit CB 1. It may be set by doing.
- FIG. 22 shows an example of a semiconductor integrated circuit device having an evening adjustment circuit TADJ.
- the semiconductor integrated circuit device shown in FIG. 22 generates the internal clock signal based on the clock signal CK input thereto by the clock pulse oscillation circuit CPG of FIG. 1, and generates the clock signal generated by the clock pulse oscillator.
- a clock signal ⁇ ⁇ 2, 3 is generated so that a predetermined phase difference is generated in the current flowing through the power supply wiring, and the central processing unit and the like constituting the semiconductor integrated circuit device are generated. It is supplied to logic circuit blocks 1 to 3. This configuration is applied to a semiconductor integrated circuit device operated by a single-phase clock signal shown in (a) of FIG.
- timing adjustment circuit TAD J clock signal ⁇ 1 to ⁇ 3 generated by the output of the evening Lee timing adjustment circuit of the selected clock signal CK se or second 0 views by the first 4 Figure multiplexer is there.
- the evening adjustment element circuit 100 of FIG. 12 itself constitutes an evening adjustment circuit TADJ, and outputs CK dl to CK d 3 Supply May be used.
- the phase difference between the rising edge and the falling edge of the clock signal given to each logic circuit block can be made appropriate in consideration of the operation margin of each logic circuit block.
- the internal clock signals 01 and 02 are generated in the clock pulse oscillation circuit CPG shown in Fig. 1 based on K, and these clock signals ⁇ 1 and 02 are respectively supplied by the timing adjustment circuits TAD J1 and TAD J2. It generates clock signals ⁇ , 02 'that cause a predetermined phase difference in the current flowing through the wiring, and supplies the clock signals ⁇ , 02' to logic circuit processes 1 and 2 such as a central processing unit constituting a semiconductor integrated circuit device.
- This configuration is applied to a semiconductor integrated circuit device operated by a multi-phase clock signal shown in (a-2) and (a-3) of FIG.
- the phase difference between the rising and falling edges of the clock signals ⁇ 1 'and 2' generated by the timing adjustment circuits TAD J1 and TAD J2 is determined by taking into account the operating margin of each logic circuit block 1 and 2. , Each can be appropriate.
- the semiconductor integrated circuit device shown in FIG. 24 does not have a clock pulse generation circuit CPG therein, and is configured so that the logic circuit blocks 1 and 2 operate based on a clock signal CK supplied from the outside.
- the input clock signal CK is generated by the timing adjustment circuit TADJ to generate a clock signal ⁇ I2 that causes a predetermined phase difference in the current flowing through the power supply wiring, and the semiconductor integrated circuit device is manufactured. It is supplied to the logic blocks 1 and 2 of the central processing unit, etc. to be configured.
- the present invention can be applied to a semiconductor integrated circuit device having no clock pulse generating circuit inside.
- Figure 25 shows an example of a data processing system with a timing adjustment circuit.
- the timing adjustment circuit Based on the clock signal CK generated by the oscillator, the timing adjustment circuit generates a clock signal with 0, ⁇ 2, and 03 set so that a predetermined phase difference occurs in the current flowing through the power supply wiring of the data processing system. Then, it is supplied to the semiconductor integrated circuit device.
- the semiconductor integrated circuit device is not particularly limited, it may have no oscillator therein and operate based on a supplied clock signal, or may have an oscillator. Good.
- TADJ internal timing adjustment circuit
- a rising edge and a falling edge of a clock signal supplied to the semiconductor integrated circuit device can be reduced.
- By changing the phase difference it becomes possible to change the phase difference of the current flowing through the power supply wiring as a whole of the data processing system, thereby reducing the harmonic noise generated in a specific frequency band. Become.
- the phase difference between the rising edge and the falling edge of the clock signals 01, 02, 3, and 01, ⁇ 2 generated by the evening adjustment circuit is the same. May be different from each other.
- the phase difference between the rising edge and the falling edge of the clock signal can be made appropriate in consideration of the operation margin of the logic circuit block or the semiconductor integrated circuit device to which the clock signal is supplied.
- the mouth signal 1 to? It is also possible to adopt a configuration in which the rising edge and the falling edge of i3 or ⁇ 1 'to ⁇ 2' are different from each other.
- Fig. 26 shows an example in which a data processing system having an evening adjustment circuit is used for equipment mounted on a vehicle. Some vehicles are equipped with AM / FM radio receivers, and some are equipped with TV receivers for vehicles. On the other hand, a data processing system using a microcomputer is installed to control the engine control, airbag, air conditioner, etc.
- in-vehicle electronic systems usually have to be installed in a very limited space, such as inside the console panel of a car or in an engine room. For this reason, it is difficult to keep a plurality of electronic systems sufficiently electrically and physically separated from each other.
- wireless communication devices such as on-board radio receivers are different from electronic systems that are fixedly installed in fixed buildings, etc. This is because the electric field strength of the electromagnetic wave changes remarkably greatly with movement, and it is desired that the influence of noise on communication electromagnetic waves with a very weak electric field strength can be eliminated.
- AM / FM Higher harmonic noise generated in the radio frequency band and TV frequency band can be particularly reduced.
- Semiconductor integrated circuit devices are not limited to logic LSIs called microprocessors and microcontrollers, but are equipped with digital signal processing processors, floating-point arithmetic processors, and other desired functions such as processors and DRAMs.
- the system LSI may be a system-on-chip system.
- the counter C NTR in the timing adjustment circuit T ADJ described with reference to FIG. 20 can be regarded as a shift register. Therefore, in the above timing adjustment circuit, a digital delay circuit which is operated by the output of the oscillation circuit and whose delay amount is set in accordance with the amount to be time-adjusted is connected to the output of the oscillation circuit. It can be considered that the shift register is constituted by a shift register configuration circuit which receives as a shift input and sets the number of shifts corresponding to the amount to be adjusted. Industrial applicability
- the present invention is not limited to on-vehicle devices, Use with wireless communication devices, portable information devices such as mobile phones and PDAs, computer devices such as personal computers, medical devices, etc., which have low electromagnetic noise immunity or whose electromagnetic noise can have a significant effect. It can be widely applied to data processing devices and semiconductor integrated circuit devices.
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Abstract
Description
明 細 書 半導体集積回路装置 Description Semiconductor integrated circuit device
技術分野 Technical field
本発明は、 半導体集積回路装置に係り、 特に、 特定周波数帯の高調波 ノイズの低減を図る技術に関するものであり、例えば自動車搭載用機器 等に適用して、 ラジオ周波数帯への所謂 E M I (Electromagnetic Interference )低減に有効な技術に関するものである。 背景技術 The present invention relates to a semiconductor integrated circuit device, and more particularly to a technology for reducing harmonic noise in a specific frequency band. For example, the present invention is applied to a device mounted on an automobile and the like, so-called EMI (Electromagnetic) for a radio frequency band. Interference) It is related to technology effective for reduction. Background art
近年、 半導体集積回路装置を使用する電子システムにおいては、 半導 体集積回路装置の技術進歩に対応して高性能化と動作の高速化が図ら れるようになってきている。電子システムが動作することにより発生す るノィズはその動作の高速化に応じて、無視できないレベルの電磁波ノ ィズを含むようになってくる。 そこで電子システムに対しては、 それ自 体から発せられる電磁波ノィズを低減することが重要となってくる。例 えば、 自動車搭載用機器などにおいては、 必要に応じて動作周波数が 4 0 M H zに達するような半導体集積回路装置の使用が考慮され始め、そ れに応じて発生する電磁波ノィズとして 8 0 M H z以上のような高調 波ノイズを含むようになる。 かかる高調波ノイズ成分は、 F Mラジオ周 波数帯にも達することとなり、もしそれが比較的大きいレベルをもって 電子システム外に放射された場合、 F Mラジオ受信に障害を与えること となる。 2. Description of the Related Art In recent years, in electronic systems using semiconductor integrated circuit devices, high performance and high-speed operation have been achieved in response to technological advances in semiconductor integrated circuit devices. The noise generated by the operation of electronic systems will include non-negligible levels of electromagnetic noise as the operation speeds up. Therefore, it is important for electronic systems to reduce electromagnetic noise emitted from the electronic systems themselves. For example, in equipment mounted on automobiles, the use of semiconductor integrated circuit devices whose operating frequency reaches 40 MHz is started to be considered as necessary, and the electromagnetic noise generated accordingly is 80 MHz. Includes harmonic noise such as z and above. Such harmonic noise components will reach the FM radio frequency band, and if they are emitted outside the electronic system at relatively high levels, they will interfere with FM radio reception.
電磁波ノイズに対しては、半導体集積回路装置を使用する機器全体と して対策をすることが従来より行われている。係る技術としては日経 B P社発行の "日経エレク トロニクス" 1 9 9 7年 1 1月 3日号(N 0. 7 0 2 )の第 1 2 3ページ乃至第 1 4 8ページに示されているようなもの がある。半導体集積回路装置を使用する機器全体としての電磁波ノイズ の低減技術では、 機器内の半導体集積回路装置等の部品、 配線等の電磁 波ノイズの発生源から生じる電磁波ノイズを、筐体外に出さないように する事が行われる。 それとともに半導体集積回路装置においても、 発生 する電磁波ノィズを低減することが求められてきている。 Conventionally, countermeasures against electromagnetic noise have been taken for the entire equipment using the semiconductor integrated circuit device. Such technology is Nikkei B "Nikkei Electronics" published by Company P Something like the one shown on pages 123 to 148 of the January 3, 1997 issue (N 0.72) . The technology for reducing electromagnetic noise in equipment that uses semiconductor integrated circuit devices as a whole is to prevent electromagnetic noise generated from sources of electromagnetic noise, such as components and wiring in semiconductor integrated circuit devices, in equipment from leaving the housing. Is done. At the same time, semiconductor integrated circuit devices are also required to reduce the generated electromagnetic wave noise.
ノィズ低減のための 1つの技術としては、半導体集積回路装置の電源 電圧を下げることが挙げられる。 この技術に従えば、 半導体集積回路装 置から実装プリント基板配線へ出力される信号レベルが低下されるこ とによって配線経路から発せられるノイズを低減させることができ、ま た半導体集積回路装置の動作電流も低減させることが出来ることによ つて、 電源経路からのノイズも低減させることが出来ることとなる。 し かし、 この技術のみでは、 回路が動作可能な動作電源電圧の制限や、 回 路の負荷駆動力の低下に拘わらずに所要の動作速度を得る上での制限 の点で、 ノイズ対策に限界が生じる。 One technique for reducing noise is to lower the power supply voltage of a semiconductor integrated circuit device. According to this technology, it is possible to reduce the noise generated from the wiring path by lowering the signal level output from the semiconductor integrated circuit device to the mounting printed circuit board wiring, and also to reduce the operation of the semiconductor integrated circuit device. Since the current can be reduced, noise from the power supply path can also be reduced. However, with this technology alone, noise suppression is required in order to limit the operating power supply voltage at which the circuit can operate and to achieve the required operating speed regardless of the decrease in the load driving force of the circuit. Limits arise.
また他の技術としては、動作クロック信号を周波数変動させる技術が ある。 この技術は、 例えば、 特開平 7— 2 3 5 8 6 2号公報に示されて いる。 この動作クロック信号を周波数変動させる技術では、例えば半導 体集積回路装置のクロック信号の周波数を所定時間毎に所定の範囲内 で変動させるものとする。 この技術では、基本波ノイズの周波数を所定 の範囲内で変動させるとともに、高調波ノイズの発生する周波数成分の 範囲を拡大し、それによつて半導体集積回路装置から発生する電磁波ノ ィズを平均化することで、発生する電磁波ノィズを低減するものである。 また更に他の技術としては、ク口ック信号に不規則的に遅延を生じさ せる技術がある。 この技術は、 例えば、 特開平 5 - 1 5 2 9 0 8号公報 に示されている。クロック信号に不規則的に遅延を生じさせる技術では、 例えば、半導体集積回路装置のクロック信号を 1パルス毎に遅延を生じ させ、 遅延時間の異なる複数のクロック信号から、 任意にクロック信号 の立ち上がり及び立ち下がりを決定するものである。 これにより、 半導 体集積回路装置が動作するク口ック信号の立ち上がり及び立ち下がり 夕イミングが一定せず、各クロック信号パルスにより生じる電磁波ノィ ズが互いに相殺されて、電磁波ノィズが平均化され低減されるものであ る。 As another technique, there is a technique of changing the frequency of an operation clock signal. This technique is disclosed, for example, in Japanese Patent Application Laid-Open No. Hei 7-235858. In the technique of changing the frequency of the operation clock signal, for example, the frequency of the clock signal of the semiconductor integrated circuit device is changed within a predetermined range every predetermined time. In this technology, the frequency of the fundamental noise is varied within a predetermined range, and the range of the frequency component where the harmonic noise occurs is expanded, thereby averaging the electromagnetic noise generated from the semiconductor integrated circuit device. By doing so, the generated electromagnetic wave noise is reduced. As still another technique, there is a technique for irregularly generating a delay in a mouthpiece signal. This technology is disclosed in, for example, Japanese Patent Application Laid-Open No. 5-152908 Is shown in In a technique for generating a clock signal with an irregular delay, for example, a clock signal of a semiconductor integrated circuit device is delayed for each pulse, and a plurality of clock signals having different delay times can be used to arbitrarily raise and lower the clock signal. The fall is determined. As a result, the rising and falling timings of the clock signal for operating the semiconductor integrated circuit device are not constant, and the electromagnetic noise generated by each clock signal pulse cancels each other, and the electromagnetic noise is averaged. It will be reduced.
しかしながら、 前記動作クロック信号を周波数変動させる技術や、 ク 口ック信号に不規則的に遅延を生じさせる技術では、一つの回路が周波 数変動や遅延時間変動のクロック信号によって動作することが必要と されるので、回路の動作タイ ミングマージンを大きくとることが出来な いという問題点を持つ。 それらの技術ではまた、 周波数変動や遅延時間 変動に応じてノイズが周波数、 時間において分散されることとなり、 特 定周波数帯の高調波ノィズを低減する上で限界を生ずる。 However, in the technique of varying the frequency of the operation clock signal or the technique of irregularly generating a delay in the clock signal, it is necessary that one circuit be operated by a clock signal having a frequency variation or a delay time variation. Therefore, there is a problem that the operation timing margin of the circuit cannot be made large. In these technologies, noise is dispersed in frequency and time in response to frequency fluctuations and delay time fluctuations, and there is a limit in reducing harmonic noise in a specific frequency band.
本発明は、 上述の技術的背景に鑑み、 半導体集積回路装置から発生す る高調波ノィズのうち、特定の周波数帯に発生する高調波ノィズを低減 することを目的とする。 In view of the above technical background, an object of the present invention is to reduce harmonic noise generated in a specific frequency band among the harmonic noise generated from a semiconductor integrated circuit device.
本発明の別の目的は、半導体集積回路装置から発生する低調波ノィズ のうち、特定の周波数帯に発生する低調波ノイズを低減することにある。 本発明の更に別の目的は、多相クロック信号に同期して動作する半導 体集積回路装置において、特定の周波数帯に発生する高調波ノイズ若し くは低調波ノイズを低減することにある。 Another object of the present invention is to reduce subharmonic noise generated in a specific frequency band among subharmonic noises generated from a semiconductor integrated circuit device. Still another object of the present invention is to reduce harmonic noise or subharmonic noise generated in a specific frequency band in a semiconductor integrated circuit device operating in synchronization with a polyphase clock signal. .
本発明の他の目的は、従来のクロック信号設計技術をそのまま利用可 能であって、特定の周波数帯に発生する高調波ノィズ若しくは低調波ノ ィズの低減を容易に実現可能にすることにある。 本発明のその他の目的は、クロック信号の基本周波数に対する高調波 ノイズのうち、ラジオ周波数帯において発生する高調波ノィズに相当す る電源電流ノイズを相対的に低減できる半導体集積回路装置を提供す る し ¾>る。 Another object of the present invention is to make it possible to use the conventional clock signal design technology as it is, and to easily realize reduction of harmonic noise or subharmonic noise occurring in a specific frequency band. is there. Another object of the present invention is to provide a semiconductor integrated circuit device capable of relatively reducing power supply current noise corresponding to harmonic noise generated in a radio frequency band among harmonic noise with respect to a fundamental frequency of a clock signal. ¾>
本発明の上記並びにその他の目的と新規な特徴は本明細書の以下の 記述と添付図面から明らかにされるであろう。 発明の開示 The above and other objects and novel features of the present invention will become apparent from the following description of the present specification and the accompanying drawings. Disclosure of the invention
本発明に係る半導体集積回路装置は、クロック信号に同期して動作す る論理回路プロックと、電源配線を流れる電流の位相差を調整するタイ ミング調整回路を有する。上記論理回路プロックは、 クロック信号に同 期して動作されることによってクロック信号に同期して動作電流が流 れる。 A semiconductor integrated circuit device according to the present invention includes a logic circuit block that operates in synchronization with a clock signal, and a timing adjustment circuit that adjusts a phase difference of a current flowing through a power supply wiring. The logic circuit block operates in synchronization with the clock signal, so that an operation current flows in synchronization with the clock signal.
クロック信号は、 第 1遷移状態になり、 その次に第 2遷移状態になり、 更にその次に第 1遷移状態になるというように、周期的に且つ交互に第 1遷移状態と第 2遷移状態を採るものと見做すことができる。 The clock signal goes to the first transition state, then to the second transition state, then to the first transition state, and so on, periodically and alternately to the first and second transition states. Can be considered to be adopted.
論理回路プロックは、それがクロック信号同期動作の回路であること によって、 クロック信号の第 1遷移状態に同期して動作される回路(以 下、 第 1回路と称する)と、 クロック信号の第 2遷移状態に同期して動 作される回路(以下、 第 2回路と称する)とを持つ。 A logic circuit block is a circuit that operates in synchronization with a first transition state of a clock signal (hereinafter, referred to as a first circuit) because it is a circuit that operates in synchronization with a clock signal. And a circuit that operates in synchronization with the transition state (hereinafter, referred to as a second circuit).
従って、 論理回路プロックに動作電流が流れるタイミングは、 クロッ ク信号の第 1遷移状態と第 2遷移状態とに同期される。 Therefore, the timing at which the operating current flows through the logic circuit block is synchronized with the first transition state and the second transition state of the clock signal.
論理回路プロックの動作電流は、半導体集積回路装置の電源配線に流 れ、 電源電流に変化をもたらす。 The operating current of the logic circuit block flows to the power supply wiring of the semiconductor integrated circuit device, and changes the power supply current.
夕イ ミング調整回路は、クロック信号の第 1遷移状態に同期して生じ る電源電流とクロック信号の第 2遷移状態に同期して生じる電源電流 との位相差を調整するように動作する。 The evening adjustment circuit includes a power supply current generated in synchronization with the first transition state of the clock signal and a power supply current generated in synchronization with the second transition state of the clock signal. It operates so as to adjust the phase difference between.
これによつて、第 1遷移状態と第 2遷移状態との繰り返しに対応され る電源電流における高調波ノイズ成分は、 その分布が変更される。 クロ ック信号の第 1遷移状態から第 2遷移状態までの時間と、第 2遷移状態 から第 1遷移状態までの時間とが実質的に等しい場合、電源電流の変化 によってもたらされる高調波ノイズは、クロック信号に対する偶数次高 調波ノイズが比較的大きなレベルを有する。 タイミング調整回路は、 所 定次数の高調波ノイズレベルを低下させる。 Thereby, the distribution of the harmonic noise component in the power supply current corresponding to the repetition of the first transition state and the second transition state is changed. If the time from the first transition state to the second transition state of the clock signal is substantially equal to the time from the second transition state to the first transition state, the harmonic noise caused by the change in the power supply current will be , The even harmonic noise with respect to the clock signal has a relatively large level. The timing adjustment circuit reduces a predetermined order harmonic noise level.
夕イ ミング調整回路は、論理回路プロックの構成に適合するよう種々 の構成を採り得る。 The evening adjustment circuit can take various configurations to conform to the configuration of the logic circuit block.
論理回路プロックが上記クロック信号の立ち上がりエッジを第 1遷 移状態とみなし、 それに同期して動作する回路グループと、 上記クロッ ク信号の立ち下がりェッジを第 2遷移状態とみなしてそれに同期して 動作する回路グループとを主体とする場合、半導体集積回路装置の電源 配線を流れる電流は、上記クロック信号の立ち上がりエッジと立ち下が りエツジに同期して流れることとなる。この場合夕ィミング調整回路は、 該電源配線を流れる電流の位相差を変更するように、半導体集積回路装 置が動作するク口ック信号の立ち上がりエツジと立ち下がりエツジの 位相差を変更する。本発明によらない場合、 半導体集積回路装置が動作 するクロック信号は、 実質的にデューティ一比 5 0 %、 即ちクロック信 号の立ち上がりエッジと立ち下がりエッジの位相差が 1 / 2となるよ うにされ、 これに応じて、 電源配線を流れる電流の位相差も 1 / 2とさ れる。 The logic circuit block regards the rising edge of the clock signal as the first transition state and operates in synchronization with it.The logic group considers the falling edge of the clock signal as the second transition state and operates in synchronization with it. In the case of mainly using a circuit group, the current flowing through the power supply wiring of the semiconductor integrated circuit device flows in synchronization with the rising edge and the falling edge of the clock signal. In this case, the evening adjustment circuit changes the phase difference between the rising edge and the falling edge of the quick signal for operating the semiconductor integrated circuit device so as to change the phase difference of the current flowing through the power supply wiring. In the case where the present invention is not applied, the clock signal operated by the semiconductor integrated circuit device is set such that the duty ratio is substantially 50%, that is, the phase difference between the rising edge and the falling edge of the clock signal is 1/2. Accordingly, the phase difference of the current flowing through the power supply wiring is also reduced to 1/2.
上記タイ ミング調整回路による、クロック信号の立ち上がりエッジと 立ち下がりエッジの位相差の変更は、 特に限定されないが、 立ち上がり エッジを所定の時間遅延させる回路構成によって、若しくは立ち下がり エッジを所定の時間遅延させる回路構成によって可能にされる。必要な らば立ち上がりエッジと立ち下がりエッジを、それそれ異なる時間をも つて、 それぞれ遅延させてもよい。 このように夕イミング調整回路によ つて、クロック信号の立ち上がりエツジと立ち下がりエツジの一方若し くは両方を所定の時間遅延させることにより、ク口ック信号の立ち上が りエッジと立ち下がりエツジの位相差が 1 / 2から異なるものとなる。 その結果、 論理回路プロックに含まれる回路グループのうち、 立ち上が りエッジに同期して動作する回路グループによって電源配線に流され る電流と、立ち下がりエッジに同期して動作する回路グループによって 電源配線に流される電流との位相差が、 1 Z 2から異なるようにされる こととなる。 このように、 立ち上がりエッジに同期して回路グループが 動作することで電源配線を流れる電流と、立ち下がりエッジに同期して 回路グループが動作することで電源配線を流れる電流の位相差が 1 / 2から異なるものとなった場合、特定の周波数帯の高調波ノイズにおい ては、 位相差が 1 / 2の時に比べて、 低減されることとなる。 The change in the phase difference between the rising edge and the falling edge of the clock signal by the timing adjustment circuit is not particularly limited, but may be changed by a circuit configuration that delays the rising edge by a predetermined time or This is enabled by a circuit configuration that delays the edge by a predetermined time. If necessary, the rising and falling edges may be delayed by different times, respectively. As described above, the rising edge and the falling edge of the clock signal are delayed for a predetermined time by the rising edge and the falling edge of the clock signal by the evening adjusting circuit, so that the rising edge and the falling edge of the clock signal are delayed. The edge phase difference is different from 1/2. As a result, of the circuit groups included in the logic circuit block, the current flowing through the power supply wiring by the circuit group that operates in synchronization with the rising edge and the power supply by the circuit group that operates in synchronization with the falling edge The phase difference with the current flowing through the wiring is made different from 1 Z 2. In this way, the phase difference between the current flowing through the power supply wiring when the circuit group operates in synchronization with the rising edge and the current flowing through the power supply wiring when the circuit group operates in synchronization with the falling edge is 1/2. If the phase difference is different from that of the above, the harmonic noise in a specific frequency band will be reduced as compared with when the phase difference is 1/2.
本発明は、 前述の動作クロック信号を周波数変動させる技術、 及びク 口ック信号に不規則的に遅延を生じさせる技術との対比から更に明ら かとなるが、上記技術が考慮していない特定周波数帯の高調波ノィズを 低減することが出来る特徴を有する。本発明は、 また上記クロック信号 に不規則的に遅延を生じさせる技術との対比から明らかなように、ク口 ック信号の第 1遷移に同期して動作する回路グループ、第 2遷移に同期 して動作する回路グループのそれそれがタイ ミング調整回路による位 相調整によらずに、ク口ック信号の周期によって決まる一定周期をもつ て動作できることを可能とするので、それら各回路グループの動作タイ ミングマージンを大きく、かつ変化の小さいものとすることが可能であ るという特徴を有する。動作夕イ ミングマージンの変化が小さいことは、 各回路グループを小さい動作マージンをもって動作させることを可能 とし、これによつて各回路を高性能化することを妨げないようにするこ とを可能とする。 The present invention is further clarified by comparison with the above-described technique for changing the frequency of the operation clock signal and the technique for irregularly generating a delay in the clock signal. It has the characteristic that harmonic noise in the frequency band can be reduced. The present invention also provides a circuit group that operates in synchronization with the first transition of the clock signal and a circuit group that operates in synchronization with the second transition, as is evident from the comparison with the above-described technique that irregularly delays the clock signal. Circuit groups that can operate with a fixed period determined by the period of the clock signal without depending on the phase adjustment by the timing adjustment circuit. The feature is that the operation timing margin can be large and the change can be small. The small change in the operating margin Each circuit group can be operated with a small operation margin, thereby making it possible to prevent each circuit from being improved in performance.
タイミング調整回路は、論理回路プロックが位相の異なる複数の内部 クロック信号を利用する構成の場合でもそれに適する構成を採り得る。 すなわち、位相の異なる複数の内部クロック信号に同期して動作する複 数の回路グループがあっても、それそれの回路グループが動作すること により、一定の位相差をもって電源配線に電流が流れるものと見做すこ とが出来るからである。 この場合に、 上記電源配線を流れる電流の位相 差を変更することにより、特定の周波数帯の高調波ノィズを低減するこ とが可能である。そのために複数の内部クロック信号のうちの所望の内 部クロック信号に対し上記タイミング調整回路を接続するか、若しくは 内部クロック信号生成回路に上記タイ ミング調整回路を有することに よって、 複数の内部クロック信号相互の立ち上がりエッジ、 もしくは立 ち下がりエッジの位相差が調整される。 なおこの場合、 各内部クロック 信号に接続されるタイミング調整回路は、すべての内部クロック信号に ついて立ち上がりエッジと立ち下がりエッジの位相差を変更する必要 はなく、または各内部クロック信号毎に変更する位相差が異なっていて もよく、半導体集積回路装置全体として電源配線に流れる電流の位相差 が 1 / 2から変更されたような状態にされればよい。 The timing adjustment circuit can adopt a configuration suitable for a configuration in which the logic circuit block uses a plurality of internal clock signals having different phases. In other words, even if there are a plurality of circuit groups that operate in synchronization with a plurality of internal clock signals having different phases, the operation of each circuit group causes a current to flow through the power supply wiring with a certain phase difference. Because it can be considered. In this case, it is possible to reduce harmonic noise in a specific frequency band by changing the phase difference of the current flowing through the power supply wiring. For this purpose, by connecting the timing adjustment circuit to a desired internal clock signal of the plurality of internal clock signals or by providing the internal clock signal generation circuit with the timing adjustment circuit, a plurality of internal clock signals can be obtained. The phase difference between the rising and falling edges is adjusted. In this case, the timing adjustment circuit connected to each internal clock signal does not need to change the phase difference between the rising edge and the falling edge for all the internal clock signals, or needs to change the phase difference for each internal clock signal. The phase difference may be different, and the semiconductor integrated circuit device as a whole may be in such a state that the phase difference of the current flowing through the power supply wiring is changed from 1/2.
更に上記タイ ミング調整回路は、半導体集積回路装置を流れる電流の 位相差がそれそれ異なる位相差となるよう、立ち上がりエッジと立ち下 がりエッジの位相差を変更させた複数のクロック信号を生成し、上記複 数のクロック信号から特定の位相差を有するク口ック信号を選択する 選択回路を有することで、半導体集積回路装置を流れる電流の位相差を 選択することができ、低減すべき周波数帯の高調波ノィズを選択するこ とが可能となる。 これによつて、 クロック信号の周期が変更されたよう な場合における特定周波数帯域での高調波ノィズの抑制制御が容易に なる。 Further, the timing adjustment circuit generates a plurality of clock signals in which the phase difference between the rising edge and the falling edge is changed so that the phase difference of the current flowing through the semiconductor integrated circuit device becomes a different phase difference. By providing a selection circuit for selecting a clock signal having a specific phase difference from the plurality of clock signals, a phase difference of a current flowing through the semiconductor integrated circuit device can be selected, and a frequency band to be reduced can be selected. The harmonic noise of It becomes possible. This facilitates the control of suppressing harmonic noise in a specific frequency band when the period of the clock signal is changed.
また上記タイ ミング調整回路は、クロック信号の立ち上がりエッジと 立ち下がりエッジの位相差を設定する設定回路を持つようにされ、前記 設定回路に設定される位相差制御データによって、自由に半導体集積回 路装置を流れる電流の位相差を決定するようにされ得る。上記設定回路 は、 半導体集積回路装置がマイクロコンピュー夕を含むなら、 当該マイ クロコンピュー夕における中央処理装置によって上記位相差制御デー 夕が設定制御される制御レジス夕によってそれが構成されたり、または 中央処理装置により参照可能な記憶回路によって実質的にそれが構成 されたりしてもよい。 これによつて、 中央処理装置が上記設定回路に設 定し、夕イ ミング調整回路は上記設定回路に指定した位相差となるよう、 クロック信号の立ち上がりエッジと立ち下がりェ、ソジの位相差を変更 する。 Further, the timing adjustment circuit has a setting circuit for setting a phase difference between a rising edge and a falling edge of the clock signal, and the semiconductor integrated circuit can be freely controlled by the phase difference control data set in the setting circuit. It may be arranged to determine the phase difference of the current flowing through the device. When the semiconductor integrated circuit device includes a microcomputer, the setting circuit is configured by a control register in which the phase difference control data is set and controlled by a central processing unit in the microcomputer, or It may be substantially constituted by a storage circuit that can be referred to by the central processing unit. As a result, the central processing unit sets the above setting circuit, and the timing adjustment circuit sets the phase difference between the rising edge and the falling edge of the clock signal so that the phase difference specified by the setting circuit becomes the same. Change
また上記タイ ミング調整回路を有する半導体集積回路装置は、 1チッ プの半導体基板上に構成されていることに限定されず、複数の半導体チ ップで構成されるマルチチップのデ一夕処理システムであってもよい。 この場合、それそれの半導体集積回路装置に上記タイミング調整回路 を有し、それそれの半導体集積回路装置において電源配線を流れる電流 の位相差を変更し、それにより特定の周波数帯に発生する高調波ノイズ を低減することで、 データ処理システム全体として、特定の周波数帯に 発生する高調波ノイズを低減することが可能となる。 Further, the semiconductor integrated circuit device having the timing adjustment circuit is not limited to being formed on one chip semiconductor substrate, but is a multi-chip data processing system composed of a plurality of semiconductor chips. It may be. In this case, each of the semiconductor integrated circuit devices has the above-described timing adjustment circuit, and in each of the semiconductor integrated circuit devices, changes the phase difference of the current flowing through the power supply wiring, thereby causing a harmonic generated in a specific frequency band. By reducing noise, it becomes possible to reduce harmonic noise that occurs in a specific frequency band as a whole data processing system.
またこの場合、それそれの半導体集積回路装置内に上記夕ィ ミング調 整回路を有さず、データ処理システムとして上記タイミング調整回路を 有するものであってもよい。データ処理システムとしてそれそれの半導 体集積回路装置がク口ック信号に同期して動作する複数のグループに 分類でき、またそれぞれのグループに属する半導体集積回路装置に供給 する電源配線上を流れる電流が、 一定の位相差を有する場合、 データ処 理システムとして上記夕イ ミング調整回路を有し、それそれの半導体集 積回路装置が同期して動作するク口ック信号の位相差を変更すること により、データ処理システムとして特定の周波数帯の高調波ノィズを低 減することが可能となる。 In this case, each of the semiconductor integrated circuit devices may not have the above-mentioned timing adjustment circuit, and may have the above-mentioned timing adjustment circuit as a data processing system. Each of them as a data processing system The semiconductor integrated circuit devices can be classified into a plurality of groups that operate in synchronization with the clock signal, and the current flowing on the power supply wiring supplied to the semiconductor integrated circuit devices belonging to each group has a certain phase difference In this case, the data processing system has the above-mentioned timing adjustment circuit, and each of the semiconductor integrated circuit devices changes the phase difference between the clock signals operated synchronously, thereby identifying the data processing system. It is possible to reduce the harmonic noise of the frequency band.
また理論上、 本発明を用いることにより、 特定周波数帯の高調波ノィ ズのみならず、特定周波数帯の低調波ノィズについても低減することが 可能である。 図面の簡単な説明 Also, theoretically, by using the present invention, it is possible to reduce not only harmonic noise in a specific frequency band but also subharmonic noise in a specific frequency band. BRIEF DESCRIPTION OF THE FIGURES
第 1図は半導体集積回路装置の全体プロック図の一例である。 FIG. 1 is an example of an overall block diagram of a semiconductor integrated circuit device.
第 2図は単相クロック信号の波形図である。 FIG. 2 is a waveform diagram of a single-phase clock signal.
第 3図は 1次から 6次までの高調波ノィズのノィズ強度係数の変化 の一例を示す特性図である。 FIG. 3 is a characteristic diagram showing an example of a change in the noise intensity coefficient of the first to sixth harmonic noises.
第 4図は多相クロック信号の波形図である。 FIG. 4 is a waveform diagram of a multiphase clock signal.
第 5図は 2相ノンオーバ一ラップクロック信号を生成する回路の一 例を示す回路図である。 FIG. 5 is a circuit diagram showing an example of a circuit for generating a two-phase non-overlapping clock signal.
第 6図は高調波毎のノィズ強度計数のグラフである。 FIG. 6 is a graph of noise intensity count for each harmonic.
第 7図は半導体集積回路装置のノィズ分布の一例を示すノィズ分布 図である。 FIG. 7 is a noise distribution diagram showing an example of a noise distribution of the semiconductor integrated circuit device.
第 8図は 6 0 M H z〜 1 0 0 M H zの F Mラジオ周波数帯に入るよ うな 3次〜 5次高調波ノィズの強度を示す特性図である。 FIG. 8 is a characteristic diagram showing the intensity of the third to fifth harmonic noises falling within the FM radio frequency band of 60 MHz to 100 MHz.
第 9図はクロック信号の立ち上がりエツジと立ち下がりエツジの位 相差を変化させていった場合における第 2次〜第 6次高調波ノィズの 強度を示した特性図である。 Figure 9 shows the 2nd to 6th harmonic noise when the phase difference between the rising edge and the falling edge of the clock signal is changed. FIG. 4 is a characteristic diagram showing strength.
第 1 0図は半導体集積回路装置を実装した装置から発生する電磁波 ノィズを説明するための模式図である。 FIG. 10 is a schematic diagram for explaining electromagnetic noise generated from a device on which a semiconductor integrated circuit device is mounted.
第 1 1図はデータ処理システムから発生する電磁波ノイズを説明す るための模式図である。 FIG. 11 is a schematic diagram for explaining electromagnetic wave noise generated from the data processing system.
第 1 2図は本発明に係る夕イ ミング調整回路の第 1実施例を示す回 路図である。 FIG. 12 is a circuit diagram showing a first embodiment of the evening adjustment circuit according to the present invention.
第 1 3図は第 1 2図のタイ ミング調整回路の出力信号波形の一例を 示す波形図である。 FIG. 13 is a waveform chart showing an example of an output signal waveform of the timing adjustment circuit of FIG.
第 1 4図は本発明に係るタイ ミング調整回路の第 1の例に使用する クロック信号選択回路の回路図である。 FIG. 14 is a circuit diagram of a clock signal selection circuit used in a first example of the timing adjustment circuit according to the present invention.
第 1 5図は選択制御信号 S 1乃至 S 3を形成する選択信号形成回路 の第 1の例であるレジス夕の説明図である。 FIG. 15 is an explanatory diagram of a register which is a first example of a selection signal forming circuit for forming the selection control signals S1 to S3.
第 1 6図は選択制御信号 S 1乃至 S 3の値に対するクロック信号 C K d 1乃至 C K d 3の選択態様を示す説明図である。 FIG. 16 is an explanatory diagram showing a manner of selecting the clock signals CK d1 to CK d3 with respect to the values of the selection control signals S 1 to S 3.
第 1 7図は選択制御信号 S 1乃至 S 3を形成する選択信号形成回路 の第 2の例であるレジス夕の説明図である。 FIG. 17 is an explanatory diagram of a register which is a second example of the selection signal forming circuit for forming the selection control signals S1 to S3.
第 1 8図は第 1 7図のレジス夕の出力 S d A , S d Bをデコードして 信号 S 1乃至 S 3を形成するデコーダの一例を示す論理回路図である。 第 1 9図はレジス夕出力 S d A, S d Bのデコード信号 S 1乃至 S 3 の値に対するクロック信号 C K d 1乃至 C K d 3の選択態様の一例を 示す説明図である。 FIG. 18 is a logic circuit diagram showing an example of a decoder for decoding the outputs S d A and S dB of the register shown in FIG. 17 to form signals S 1 to S 3. FIG. 19 is an explanatory diagram showing an example of a selection mode of the clock signals CKd1 to CKd3 with respect to the values of the decoded signals S1 to S3 of the resist output SdA and Sdb.
第 2 0図は本発明に係るタイ ミング調整回路の第 2の例を示すプロ ック図である。 FIG. 20 is a block diagram showing a second example of the timing adjustment circuit according to the present invention.
第 2 1図は第 2 0図の夕イ ミング調整回路の出力波形の一例を示す 波形図である。 第 2 2図はタイ ミング調整回路を採用した半導体集積回路装置のブ 口ック図である。 FIG. 21 is a waveform diagram showing an example of the output waveform of the evening adjustment circuit of FIG. FIG. 22 is a block diagram of a semiconductor integrated circuit device employing a timing adjustment circuit.
第 2 3図はタイ ミング調整回路を採用した半導体集積回路装置の別 の構成を示すプロック図である。 FIG. 23 is a block diagram showing another configuration of a semiconductor integrated circuit device employing a timing adjustment circuit.
第 2 4図は夕イ ミング調整回路を採用した半導体集積回路装置の更 に別の構成を示すブロック図である。 FIG. 24 is a block diagram showing still another configuration of the semiconductor integrated circuit device employing the evening adjustment circuit.
第 2 5図はタイ ミング調整回路を採用したデータ処理装置の構成を 示すプロック図である。 FIG. 25 is a block diagram showing a configuration of a data processing device employing a timing adjustment circuit.
第 2 6図は本発明に係る半導体集積回路装置を使用したデータ処理 装置を搭載した自動車の模式図である。 発明を実施するための最良の形態 FIG. 26 is a schematic view of an automobile equipped with a data processing device using the semiconductor integrated circuit device according to the present invention. BEST MODE FOR CARRYING OUT THE INVENTION
第 1図は、実施例の半導体集積回路装置 MP Cのプロック図である。 特に制限されないが、 半導体集積回路装置 MP Cは、 単結晶シリコンの ような 1個の半導体基板に、公知の CMO S集積回路装置製造技術によ つて構成される。 同図の半導体集積回路装置 MP Cは、 マイクロプロセ ッサを構成するよう、 中央処理装置 CB 1、 演算器 CB 2、 ダイレク ト メモリアクセスコントローラ CB 6、 割り込みコントローラ CB 3、 第 1、 第 2周辺回路 CB 4, CB 5、 バスステートコン トローラ CB 7、 夕イマュニヅ ト CB 8、 AZD変換器 CB 9、 リード 'オンリ 'メモリ (ROM) M l、 ランダム ' アクセス-メモリ (RAM) M2、 入出力 ポート回路 I OP 1乃至 I O P 4、 クロックパルス発生回路 C P G、 及 びタイ ミング調整回路 TAD Jを有する。 FIG. 1 is a block diagram of a semiconductor integrated circuit device MPC of an embodiment. Although not particularly limited, the semiconductor integrated circuit device MPC is formed on a single semiconductor substrate such as single crystal silicon by a known CMOS integrated circuit device manufacturing technology. The semiconductor integrated circuit device MPC shown in the figure is composed of a central processing unit CB1, an arithmetic unit CB2, a direct memory access controller CB6, an interrupt controller CB3, a first and a second peripheral so as to constitute a microprocessor. Circuit CB4, CB5, Bus state controller CB7, Evening CB8, AZD converter CB9, Read 'only' memory (ROM) Ml, Random 'Access-memory (RAM) M2, I / O port The circuit includes IOP1 to IOP4, a clock pulse generation circuit CPG, and a timing adjustment circuit TADJ.
同図の各回路ないしは回路プロックは、図示のデ一夕バス D B S 1 , D B S 2、 アドレスバス AB S 1, AB S 2、 制御バス C B Sに結合さ れる。入出力ポート回路 I O P 1乃至 I OP 4は、 その外部結合用ノー ドが、半導体集積回路装置 MP Cの外部端子 T a 1乃至 T d nに結合さ 図示の各回路ないしは回路プロックは、半導体集積回路装置 MP Cの 図示しない電源配線を介して電源受給用の外部端子 TV C C, TCJNDに接 続される。 また、 夕イミング調整回路 TAD Jを介して出力されたクロ ック信号は図示しないクロック信号配線を介して全ての回路プロック に接続される。 Each circuit or circuit block in the figure is coupled to the illustrated data buses DBS 1 and DBS 2, the address buses ABS 1 and ABS 2, and the control bus CBS. I / O port circuits IOP 1 to IOP 4 Are connected to external terminals T a1 to T dn of the semiconductor integrated circuit device MPC. Each circuit or circuit block shown in the figure is connected to an external terminal for receiving power via a power supply line (not shown) of the semiconductor integrated circuit device MPC. Connected to T VCC and TCJND. The clock signal output via the evening adjustment circuit TADJ is connected to all circuit blocks via a clock signal line (not shown).
図示の中央処理装置 CB 1、 演算器 CB 2、 割り込みコントロ一ラ C B 3等は、上述のタイ ミング調整回路 TAD Jを介して供給されるクロ ック信号を動作ク口ック信号として受ける論理回路プロックを構成す る。 The illustrated central processing unit CB1, arithmetic unit CB2, interrupt controller CB3, etc. receive the clock signal supplied via the timing adjustment circuit TADJ as an operation clock signal. Construct a circuit block.
図示のタイ ミング調整回路 TAD Jについては、後で更に詳細に説明 する。夕イ ミング調整回路 TAD Jを除く図示の回路乃至回路プロック の殆どは、 公知のものと同じにされてよく、 しかもそれそれの詳細は本 発明に直接関係がないので、 ここでは、 その詳細な説明は省略する。 半導体集積回路装置 MP Cにおいて考慮の対象とし得る電磁波ノィ ズとしては、 クロック信号に同期して内部の論理回路が動作し、 その際 に電源配線に電流が流れることにより生じる電磁波ノイズ、内部のバス AB S 1, AB S 2 , DB S 1, DB S 2等の信号配線に信号電流が流 れることにより生じる電磁波ノィズ、半導体集積回路装置の入出力ポー ト回路 I OP 1乃至 I O P 4からそれそれの入出力端子である外部端 子 T a 1乃至 T d nに信号を与えるように、かかる端子のそれそれが持 つ浮遊容量に電荷をチャージ/ディスチャージすることにより生じる 電磁波ノイズが挙げられる。 The illustrated timing adjustment circuit TADJ will be described in further detail later. Most of the illustrated circuits and circuit blocks except for the evening adjustment circuit TADJ may be the same as those known in the art, and the details thereof are not directly related to the present invention. Description is omitted. Electromagnetic noise that can be considered in the semiconductor integrated circuit device MPC includes electromagnetic noise generated when an internal logic circuit operates in synchronization with a clock signal and current flows through the power supply wiring, and an internal bus noise. Electromagnetic noise caused by signal current flowing through signal wiring such as AB S1, AB S2, DB S1, and DB S2, and input / output port circuits IOP1 to IOP4 of semiconductor integrated circuit devices. Electromagnetic noise generated by charging / discharging the stray capacitance of each of the terminals to give a signal to the external terminals T a1 to T dn which are the input / output terminals of the terminals.
それら電磁波ノイズのうち、電源配線に関連するノイズ以外のノイズ は、 比較的小さいレベルしか持たないと理解されてよい。 すなわち、 入出力ポート回路 I O P 1乃至 I O P 4は、 中央処理装置 C B 1がそのプログラムに従って処理すべき種々の信号を入出力端子 T a 1乃至 T d nの内の所定のものを介して受け、また中央処理装置 C B 1によるプログラムの実行に従って形成された種々の信号を該端子 のうちの所定のものに出力するものであるので、一般的には中央処理装 置のような回路の動作速度に比べて、 その動作速度が低速とされる。 こ れに応じて、入出力端子 T a 1乃至 T d nに関連する電磁波ノイズは、 それら端子の信号変化スビードが比較的に遅いため、その周波数も低く、 そのレベルが小さいと見做して良い。内部のバス配線のような信号配線 により発生する電磁波ノィズは、それらの配線によって伝達されるべき 信号のスピードが速いことによって、 その周波数も比較的に高い。 しか しながら、 それら信号配線は、 専ら信号のみを伝送するものであり、 微 細配線構成を採り得ることから面積的にも半導体集積回路装置全体に 占める割合が比較的小さいものとなる。加えてそれら信号配線が扱うベ き信号に対応する電力量は、電源配線における電力量に比較して小さい。 これらの事情から、それら信号配線によってもたらされる電磁波ノィズ もまた比較的小さいレベルしか持たないと見做してよい。 Among these electromagnetic noises, noises other than the noise related to the power supply wiring may be understood to have relatively small levels. That is, the input / output port circuits IOP1 to IOP4 receive various signals to be processed by the central processing unit CB1 in accordance with the program through predetermined ones of the input / output terminals Ta1 to Tdn, and Since various signals formed in accordance with the execution of the program by the central processing unit CB 1 are output to predetermined ones of the terminals, the signals are generally compared with the operation speed of a circuit such as the central processing unit. Therefore, the operation speed is set to be low. Accordingly, the electromagnetic wave noise related to the input / output terminals T a1 to T dn may be regarded as having a low frequency and a low level because the signal change speed of those terminals is relatively slow. . Electromagnetic noise generated by signal wiring such as internal bus wiring has a relatively high frequency due to the high speed of signals to be transmitted by those wirings. However, these signal wirings exclusively transmit signals only, and can take a fine wiring configuration. Therefore, the ratio of the signal wirings to the entire semiconductor integrated circuit device is relatively small. In addition, the power amount corresponding to the signal to be handled by these signal lines is smaller than the power amount in the power supply line. Under these circumstances, it can be considered that the electromagnetic noise caused by the signal wiring also has a relatively small level.
これに対して電源配線より生じる電磁波ノイズは、かかる電源配線が 半導体集積回路装置内の回路プロック全てに接続されており、クロック 信号同期型のような回路のための動作電流を扱うものであるので、ク口 ック信号に対応するような高い周波数、且つ高いレベルのものとなる。 即ち、図示のバスを介して結合されているような複数の回路グループは、 クロック信号によるタイミング制御の元で一斉に動作される。これによ つて、 電源配線には、 クロック信号に同期した大きな動作電流が流れる ことになる。 On the other hand, the electromagnetic noise generated from the power supply wiring is such that the power supply wiring is connected to all the circuit blocks in the semiconductor integrated circuit device and handles the operating current for a circuit such as a clock signal synchronous type. , A high frequency and a high level corresponding to the click signal. That is, a plurality of circuit groups connected via the illustrated bus are operated at the same time under timing control by a clock signal. As a result, a large operating current synchronized with the clock signal flows through the power supply wiring.
電源電流、 即ち図示の回路ブロックの動作電流は、 更に説明すれば次 0 / 5 51 The power supply current, that is, the operating current of the circuit block shown in FIG. 0/5 51
14 のようになる。 It looks like 14.
即ち、 論理回路プロックは、 その中に存在するような複数の論理ゲー ト回路、演算回路がクロック信号によって動作することによって電流を 消費する。複数の論理ゲート回路や演算回路の従属接続のような接続に よって一種の順序回路が構成されるなら、順序回路はクロック信号によ る動作制御の元で、その内部の複数の従属接続された回路に次々と信号 が伝播するように動作する。 これによつて、 順序回路は、 従属接続回路 の信号伝播遅延時間に対応するような期間に豆って電流を消費する。 ク口ック信号による直接的な動作制御が行われない回路であっても、 クロック信号により動作制御される回路からの出力をその入力に受け る回路は、その入力がクロック信号によって夕イ ミング制御されたもの であることにより、 実質上は、 クロック信号によって間接的にタイミン グ制御される回路を構成する。 In other words, a logic circuit block consumes current when a plurality of logic gate circuits and arithmetic circuits, such as those present therein, are operated by a clock signal. If a kind of sequential circuit is formed by a connection such as a cascade connection of a plurality of logic gate circuits and arithmetic circuits, the sequential circuit has a plurality of cascaded connections within it under operation control by a clock signal. It operates so that the signal propagates to the circuit one after another. Thus, the sequential circuit consumes current for a period corresponding to the signal propagation delay time of the cascade connection circuit. Even if a circuit is not directly controlled by a clock signal, a circuit that receives an output from a circuit whose operation is controlled by a clock signal at its input will have its input synchronized with the clock signal. By being controlled, it effectively constitutes a circuit whose timing is indirectly controlled by a clock signal.
回路プロック内の単位論理ゲート回路のような単位回路は、その出力 ノードにつながる浮遊容量や寄生容量のような負荷に信号を与えるた めの負荷駆動電流と共に、 往々にして、 その出力ノードに出力信号を与 えるための pチャネル M O S F E Tと nチャネル M O S F E Tとから なるような出力素子が信号遷移時に同時的に導通することに起因する 所謂貫通電流をも生じる。貫通電流もまた、 それが信号遷移に関連して 生じるので、 実質的にクロック信号に同期した電流を構成する。 A unit circuit, such as a unit logic gate circuit in a circuit block, often has an output at its output node, along with a load drive current to provide a signal to the load, such as stray or parasitic capacitance connected to its output node. A so-called through current also occurs because the output elements, such as p-channel MOSFETs and n-channel MOSFETs for providing signals, conduct simultaneously at the time of signal transition. The shoot-through current also constitutes a current substantially synchronized with the clock signal as it occurs in connection with the signal transition.
それらにより、回路プロックの動作電流はクロック信号に応じて比較 的大きいレベル、 時間を持って変化する。 かかる動作電流は、 電源配線 から供給される。即ち、 ク口ック信号に同期して電源配線に電流が流れ、 周波数の高い電磁波ノィズが半導体集積回路装置全体から発せられる こととなる。 またこの電源配線に流れる電流は、 当該半導体集積回路装 置外の電源装置から供給されるものであるので、当該半導体集積回路装 置のみならず、当該半導体集積回路装置を使用するシステム全体として も、 周波数の高い電磁波ノイズを発生させる要因ともなる。 クロック信 号に同期して流れる電流に基づく電磁波ノイズは、クロック信号の周期 ないし周波数(以下、 f 。と示す)を持つ基本波ノイズのみならず、 周波 数 2 f 0、 周波数 3 f 。などの周波数を持つ電磁波ノイズすなわち高調 波ノイズや、 周波数 f 。/2、 周波数 f 。 3などの周波数を持つ電磁 波ノイズすなわち低調波ノイズをも含む As a result, the operating current of the circuit block changes with a relatively large level and time according to the clock signal. Such an operating current is supplied from the power supply wiring. That is, a current flows through the power supply wiring in synchronization with the clock signal, and high-frequency electromagnetic noise is emitted from the entire semiconductor integrated circuit device. Since the current flowing through the power supply wiring is supplied from a power supply device outside the semiconductor integrated circuit device, Not only the device, but also the whole system using the semiconductor integrated circuit device is a factor of generating high-frequency electromagnetic wave noise. Electromagnetic noise based on the current flowing in synchronization with the clock signal, the period of the clock signal to a frequency (hereinafter, f. And shown) not only the fundamental wave noise with, frequency number 2 f 0, frequency 3 f. Electromagnetic noise having a frequency such as harmonic noise or frequency f. / 2, frequency f. Includes electromagnetic noise with frequencies such as 3 or subharmonic noise
第 2図に半導体集積回路装置が動作する単相クロック信号波形の例 を示す。 第 2図の (a) はクロック信号の電圧変化を示すものであり、 横軸が時間、 縦軸が電圧強度を示し、 第 2図の (b) は上記クロック信 号に対応する電源配線に流れる電流の変化を示すものであり、横軸が時 間、 縦軸が電流強度を示す。 第 2図は、 半導体集積回路装置 MP Cが、 クロック信号の立ち上がりエッジ (Vi^ とクロック信号 の立ち下がりエッジ (Vhigh とのそれぞれに同期して動作 する構成とされている場合を示す。 この場合は、 クロック信号の立ち上 がりエッジと立ち下がりエッジとのタイ ミングに同期して、それぞれ電 源電流が流れ、 周波数 2 f 0の基本波ノイズが発生する。 なお、 この場 合、 半導体集積回路装置 MP Cは、 クロック信号の立ち上がりに同期し て動作する回路 (立ち上がり応答回路) と、 立ち下がりに同期して動作 する回路 (立ち下がり応答回路) とを含む。 立ち上がり応答回路と立ち 下がり応答回路とに求められる構成上の相違によって、ク口ック信号の 立ち上がりに同期して流れる電流波形とクロック信号の立ち下がりに 同期して流れる電流波形とに相違が生じる。 そこで、 電源配線を流れる 電流 g ( t ) を、 クロック信号の立ち上がりに同期して流れる電流 gR ( t ) と、 クロック信号の立ち下がりに同期して流れる電流 gF ( t ) の和として表わすと、 S (t ) =gR (t ) +gF ( t ) ···( 1 ) FIG. 2 shows an example of a single-phase clock signal waveform in which the semiconductor integrated circuit device operates. (A) of FIG. 2 shows the voltage change of the clock signal, the horizontal axis shows time, and the vertical axis shows the voltage intensity. FIG. 2 (b) shows the power supply wiring corresponding to the above clock signal. The horizontal axis indicates time and the vertical axis indicates current intensity. FIG. 2 shows that the semiconductor integrated circuit device MPC detects the rising edge of the clock signal (Vi ^ And the falling edge of the clock signal (Vhigh Here, a case is shown in which it is configured to operate in synchronization with each of the above. In this case, the power supply currents flow in synchronization with the rising edge and the falling edge of the clock signal, and a fundamental noise having a frequency of 2f0 is generated. In this case, the semiconductor integrated circuit device MPC includes a circuit that operates in synchronization with the rise of the clock signal (rise response circuit) and a circuit that operates in synchronization with the fall (fall response circuit). . Differences in the current waveform that flows in synchronization with the rising edge of the clock signal and the current waveform that flows in synchronization with the falling edge of the clock signal occur due to the difference in configuration required for the rising response circuit and the falling response circuit. . Therefore, representing the current g (t) flowing through the power line, the current g R (t) flowing in synchronization with the rising edge of the clock signal, as the sum of the current flowing in synchronization with the falling edge of the clock signal g F (t) When, S (t) = g R (t) + g F (t) (1)
となる。便宜的にクロック信号の立ち上がりに同期して流れる電流と、 クロック信号の立ち下がりに同期して流れる電流が実質的に同じと見 做せる場合、 上記( 1 )式は Becomes For convenience, when the current flowing in synchronization with the rising edge of the clock signal and the current flowing in synchronization with the falling edge of the clock signal can be considered substantially the same, the above equation (1) becomes
g (t ) = gR ( t ) + gR (t— R T) -( 2 ) g (t) = g R (t) + g R (t— RT)-(2)
と表わす事が出来る。 ここで Rは gR ( t ) と gF (t ) の位相差を示 す。デューティ一比 5 0 %のクロック信号の場合、 R = 1/2となる。 また Tは、 クロック信号の周期であり、 1/f 。となる。 この時電源配 線を流れる電流により生じる n次高調波ノィズの周波数スべク トル G (nf o) は( 1 )式をフーリエ変換することにより求められ、 gR ( t ) の周波数スペク トル GR (n f 。) を用いて、 Can be expressed as Where R shows the phase difference of g R (t) and g F (t). For a clock signal with a duty ratio of 50%, R = 1/2. T is the period of the clock signal, which is 1 / f. Becomes Frequency all-vector G of the n-th harmonic Noizu caused by current flowing through the time power wiring (nf o) is obtained by performing a Fourier transform of the equation (1), g frequency spectrum G of R (t) Using R (nf.),
G(n f 0)=GR(n f 0)+ e xp(- j nw0RT)GR(n f 0) G (nf 0 ) = G R (nf 0 ) + e xp (-j nw 0 RT) G R (nf 0 )
= { 1 + e X p ( - j 2 ττω0Ε T )} GR(n f 。)···( 3 ) と表わす事が出来る。 ここで ω。は角周波数を表わす。 そして G (nf 。) の絶対値は、 = {1 + e X p (-j 2 ττω 0 Ε T)} G R (nf)... (3) Where ω. Represents an angular frequency. And the absolute value of G (nf.) Is
I G(nf 0) I =H(nf 0) I GR (nf 0) | -(4-1 ) IG (nf 0 ) I = H (nf 0 ) IG R (nf 0 ) |-(4-1)
H(n f 0 )= I l + e xp(- j 27rnR) | H (n f 0) = I l + e xp (-j 27rnR) |
= {2 + 2 c o s ( 27rnR)} 1/2-( 4-2 ) = {2 + 2 cos (27rnR)} 1/ 2-(4-2)
となる。 Becomes
第 3図は、 1次から 6次までの高調波ノイズのノイズ強度係数の変化 の一例を示す。 第 3図において、 縦軸はノイズの強度係数、 横軸は位相 差を示す。第 3図の右側にはノイズの変化曲線に付された符号と高調波 の次数番号との対応 (凡例) を示している。 これにより、 四角符号が付 けられた曲線は、 1次高調波ノイズの変化曲線であり、 丸型符号が付け られた曲線は、 2次高調波ノイズの変化曲線であることが理解される。 上記第 2図の (b) に図示した電源電流波形例では、 理解の容易化の ために、立ち上がり応答回路の動作に起因する電流波形と立ち下がり応 答回路の動作に起因する電流波形との差が比較的小さく、且つクロック 信号の繰り返しに対応する電流波形の変化も比較的小さい例を示して いる。 FIG. 3 shows an example of a change in the noise intensity coefficient of the first to sixth harmonic noise. In FIG. 3, the vertical axis represents the noise intensity coefficient, and the horizontal axis represents the phase difference. The right side of Fig. 3 shows the correspondence (legend) between the sign assigned to the noise change curve and the harmonic order number. Thus, it is understood that the curve with the square sign is the change curve of the first harmonic noise, and the curve with the round sign is the change curve of the second harmonic noise. In the example of the power supply current waveform shown in Fig. 2 (b), the understanding is easy. Therefore, the difference between the current waveform caused by the operation of the rising response circuit and the current waveform caused by the operation of the falling response circuit is relatively small, and the change in the current waveform corresponding to the repetition of the clock signal is also relatively small. An example is shown.
しかし、 電流波形は、 立ち上がり応答回路と立ち下がり応答回路との 相違に応じた変化が生じる。例えば、 クロック信号の立ち上がりタイ ミ ングにおいて入力信号を受け、ク口ック信号の立ち下がりタイミングに おいて出力信号を出力するように構成される論理演算回路のような回 路は、機能的に立ち上がり応答回路と立ち下がり応答回路の両方を持つ ことになる。 この場合、信号入力と信号出力とは異なる回路動作である。 よってクロック信号立ち上がり時の電源電流と立ち下がり時の電源電 流が同じ波形になることは保証されない。 However, the current waveform changes according to the difference between the rising response circuit and the falling response circuit. For example, a circuit such as a logic operation circuit configured to receive an input signal at the rising timing of a clock signal and output an output signal at the falling timing of a clock signal is functionally functional. It has both a rising response circuit and a falling response circuit. In this case, the signal input and the signal output are different circuit operations. Therefore, it is not guaranteed that the power supply current when the clock signal rises and the power supply current when it falls have the same waveform.
電流波形は、 また、 中央処理装置 C B 1それ自体のプログラム実行に 対応する順序動作や、中央処理装置 C B 1によって制御される回路の順 序動作に応じて、 クロック信号の複数サイクルにおいて変化し得る。即 ち、 電源電流には、 クロック信号の周期よりも長い周期に亘る変化が生 じる。 The current waveform may also change in multiple cycles of the clock signal, depending on the sequential operation corresponding to the program execution of the central processing unit CB 1 itself and the sequential operation of the circuit controlled by the central processing unit CB 1 . That is, the power supply current changes over a period longer than the period of the clock signal.
その結果として、 電源電流によって、 クロック信号の周期より長い周 期を持つ低調波ノイズも存在し得る。 なお低調波ノィズに対しても、 必 要ならば上記式と類似の式を設定することは可能である。 As a result, depending on the power supply current, there may be subharmonic noise having a period longer than that of the clock signal. If necessary, it is possible to set an equation similar to the above equation for subharmonic noise.
第 4図は、基本クロック信号と共にそれに基づいて形成されるような 2相ノンオーバーラップクロック信号 ø 1、 φ 2の波形例を示す。すな わち、 第 4図の (a— 1 ) は周期 Tないし基本周波数 f 。を持つ基本ク ロック信号の電圧変化を示すものであり、 第 4図の (a— 2 ) は 2相ク 口ック信号の ø 1クロック信号の電圧変化を示すものであり、第 4図の ( a— 3 )は 2相クロック信号の 2クロック信号の電圧変化を示すも のである。 第 4図 (a— 1 ) 乃至第 4図の (a— 3 ) において、 それそ れ横軸が時間、 縦軸が電圧強度を示す。 また第 4図の (b) は上記 ø 1 クロック信号、 φ 2クロック信号に対応する電源配線を流れる電流の変 化例を示すものであり、 横軸が時間、 縦軸が電流強度を示す。 第 5図に は上記 2相ノンオーバ一ラップク口ック信号を生成する回路の一例が 示される。 第 4図の (b) に例示する電流波形は、 本質的ではないけれ ども、 ø 1クロック信号の立ち上がりエッジに同期して動作する回路と ø 2クロヅク信号の立ち下がりェヅジに同期して動作する回路が第 1 のグループを構成し、 ø 1クロック信号の立ち下がりエッジに同期して 動作する回路と ø 2クロック信号の立ち上がりエッジに同期して動作 する回路が第 2のグループを構成すると見做されるような形態をもつ て変化される。 この電源電流のもとでは、 第 1のグループが動作するこ とにより流れる電流と第 2のグループが動作することにより流れる電 流により、 周波数 2 f 。の基本波ノイズが発生する。 単相クロック信号 の場合と同様、 第 1のグループが動作することにより流れる電流を gR ( t ) 、 第 2のグループが動作することにより流れる電流を gF ( t ) とした場合、 電源配線を流れる電流 g ( t ) は、 FIG. 4 shows an example of the waveforms of the two-phase non-overlapping clock signals ø1 and ø2 formed together with the basic clock signal. That is, (a-1) in FIG. 4 is the period T or the fundamental frequency f. Fig. 4 (a-2) shows the voltage change of the ø1 clock signal of the two-phase clock signal. (a-3) shows the voltage change of the two-phase clock signal of the two-phase clock signal. It is. In FIGS. 4 (a-1) to 4 (a-3), the horizontal axis represents time, and the vertical axis represents voltage intensity. FIG. 4 (b) shows an example of a change in the current flowing through the power supply wiring corresponding to the ø1 clock signal and the ø2 clock signal. The horizontal axis represents time, and the vertical axis represents current intensity. FIG. 5 shows an example of a circuit for generating the above two-phase non-overlapping signal. The current waveform illustrated in (b) of FIG. 4, although not essential, operates in synchronization with the rising edge of the ø1 clock signal and operates in synchronization with the falling edge of the ø2 clock signal The circuits constitute the first group, and the circuit that operates in synchronization with the falling edge of the ø1 clock signal and the circuit that operates in synchronization with the rising edge of the ø2 clock signal are considered to form the second group. It is changed with the form that is done. Under this power supply current, the frequency 2 f is generated by the current flowing when the first group operates and the current flowing when the second group operates. Of the fundamental wave noise. As in the case of the single-phase clock signal, if the current that flows when the first group operates is g R (t) and the current that flows when the second group operates is g F (t), the power supply wiring The current g (t) flowing through
S ( t ) = gR (t ) + gF ( t ) - ( 5 ) S (t) = g R (t) + g F (t)-(5)
と表わす事ができる。便宜上、 第 1のグループが動作することにより流 れる電流と、第 2のグループが動作することにより流れる電流が実質的 に同じと見做せる場合、 上記( 5 )式は Can be expressed as For convenience, if the current flowing when the first group operates and the current flowing when the second group operates can be considered substantially the same, the above equation (5) becomes
g ( t ) = gR ( t ) + gR (い R T) '··( 2 ) g (t) = g R (t) + g R (i RT) '
と表わす事が出来る。 ここで Rは gR ( t ) と gF (t ) の位相差を示 す。第 1のグループと第 2のグループが一定時間毎に動作した場合、 R = 1/2となる。 また Tは、 基本クロック信号の周期であり、 l/f 。 となる。 この時、 電源配線を流れる電流により生じる n次高調波ノィズ の周波数スぺク トル G (n f 。) は( 5 )式をフーリエ変換することによ り求められ、 gR (t ) の周波数スペク トル GR (nf 。) を用いて、 G(nf 0)=GR(nf 0)+exp(- j nw0RT)GR(nf 0) Can be expressed as Where R shows the phase difference of g R (t) and g F (t). When the first group and the second group operate at regular intervals, R = 1/2. T is the period of the basic clock signal, l / f. Becomes At this time, the nth harmonic noise generated by the current flowing through the power supply wiring Frequency spectrum G (nf.) By using the equation (5) sought Ri by to Fourier transform, g R (t) of the frequency spectrum G R (nf.), G (nf 0 ) = G R (nf 0 ) + exp (-j nw 0 RT) G R (nf 0 )
= { 1 + e X p ( - j 27Tw0R T )} GR(n f 。)···( 6 ) と表わす事が出来る。 ここで ω。は角周波数を表わす。 そして G (nf o) の絶対値は、 = {1 + e X p (-j 27Tw 0 RT)} G R (nf.) (6) Where ω. Represents an angular frequency. And the absolute value of G (nf o) is
I G (nf o) I =H (nf o) | GR (nf 0) I -(7 ) IG (nf o) I = H (nf o) | G R (nf 0 ) I-(7)
H (n f o) = | 1 +e xp ( - j 2 ττ n R ) | H (n f o) = | 1 + e xp (-j 2 ττ n R) |
= { 2 + 2 c o s ( 27Γ nR) } 1/2 = {2 + 2 cos (27Γ nR)} 1/2
となり、 単相クロック信号の場合と同様、 ノイズ成分を数式として表わ すことが出来る。 As in the case of a single-phase clock signal, the noise component can be expressed as an equation.
また多相クロック信号により動作する半導体集積回路装置の場合、上 記 2グループに分類した場合と同様に 3グループ以上のグループに分 類することが出来る場合もあり得るが、 その場合においても、 それそれ のグループ毎に流れる電流の総和が電源配線を流れる電流であり、上記 と同様な捉え方でノィズを捉えることが出来る。 Also, in the case of a semiconductor integrated circuit device operated by a multi-phase clock signal, it may be possible to classify the device into three or more groups in the same manner as in the above-described two groups, but even in such a case, there are various cases. The sum of the current flowing for each group is the current flowing in the power supply wiring, and the noise can be captured in the same manner as described above.
本発明に従えば、半導体集積回路装置 MP Cの電源配線を流れる電流 を、 クロック信号に同期する複数の電流の合成として扱い、 それそれの 電流間の位相差を変えることにより特定周波数帯に発生する高調波ノ ィズ若しくは低調波ノィズの低減が可能とされる。 According to the present invention, a current flowing through the power supply wiring of the semiconductor integrated circuit device MPC is treated as a combination of a plurality of currents synchronized with a clock signal, and generated in a specific frequency band by changing a phase difference between the respective currents. Harmonic noise or subharmonic noise.
電流間の位相差を変えることにより特定周波数帯に発生する高調波 ノイズ若しくは低調波ノィズの強度が変化することは、 ( 4 - 2 )式 The change in the intensity of harmonic noise or subharmonic noise generated in a specific frequency band by changing the phase difference between the currents is expressed by Equation (4-2).
H (nf O) = | 1 +e xp (- j 27rnR) | H (nf O) = | 1 + e xp (-j 27rnR) |
における Rを変更することに対応する。 Corresponds to changing R in
各電流は 1クロック信号に同期して回路が動作することで流れるも のである。 それ故に、 各電流間の位相差は、 各電流が同期するクロック 信号のエッジのタイ ミングを変更することによって変えることが可能 となる。 Each current flows when the circuit operates in synchronization with one clock signal. Therefore, the phase difference between each current is This can be changed by changing the timing of the signal edge.
例えば、 第 2図に示す単相クロック信号が用いられる場合、 クロック 信号の立ち上がりエッジから立ち下がりエッジの位相差を 1 / 2から 1/3のような値に変化させることで、立ち下がりエッジに同期する回 路の動作タイミングも変化することとなるので、 第 2図の (b) に示す ような電流、 gRと gFの位相差もクロック信号の変化に対応して、 1 / 3のような値に変化されることとなる。 For example, when the single-phase clock signal shown in Fig. 2 is used, the phase difference between the rising edge and the falling edge of the clock signal is changed from 1/2 to 1/3, so that the falling edge since the operation timing of the synchronizing circuits also changes, Figure 2 (b), to indicate such a current, the phase difference of the g R and g F even in response to a change in the clock signal, the 1/3 It will be changed to such a value.
同様に第 4図に示す多相クロック信号においても、 φ 1クロック信号 の立ち上がりエッジから立ち下がりエッジの位相差と、 ø 2クロック信 号の立ち下がりエッジから立ち上がりエツジの両方の位相差をそれそ れ 1/3のような値にすることにより、上記第 2グループの回路の動作 タイ ミングも変化し、 電流 gRと gFの位相差も 1/3のような値に変 化されることとなる。 Similarly, in the polyphase clock signal shown in FIG. 4, both the phase difference between the rising edge and the falling edge of the φ1 clock signal and the phase difference between the falling edge and the rising edge of the ø2 clock signal are calculated. by such a value that 1/3 is, the operation timing of the circuit of the second group also changes, that is change the value like 1/3 even phase difference of currents g R and g F Becomes
第 6図は、 gRと gFの位相差 Rを 0.2 50, 0.375 , 0.4 1 7,FIG. 6 is, g R and g retardation R 0.2 50 F, 0.375, 0.4 1 7,
0.500に設定した場合の各高調波毎の強度係数を示している。 第 6 図において、 横軸は高調波の次数を示し、 縦軸はノイズの強度係数を示 す。第 6図に示すように、 位相毎に各高調波ノイズの強度係数が異なる ことが明らかである。 なお、 第 6図においては R= 1/2の場合、 1次、 3次、 5次のような奇数次数高調波ノイズの強度係数が 0であるように されている。しかしながら実際的には、前述から明らかな通り、 gR( t ) と gF (t ) とが等しくなる保証はないので、 奇数次数高調波ノイズは 必ずしも 0にはならない。 The intensity coefficient for each harmonic when set to 0.500 is shown. In Fig. 6, the horizontal axis shows the harmonic order, and the vertical axis shows the noise intensity coefficient. As shown in FIG. 6, it is clear that the intensity coefficient of each harmonic noise differs for each phase. In FIG. 6, when R = 1/2, the intensity coefficient of odd-order harmonic noise such as the first, third, and fifth order is set to 0. However, in practice, as is clear from the above, there is no guarantee that g R (t) and g F (t) are equal, so odd-order harmonic noise does not always become zero.
第 7図乃至第 9図は、第 1図のマイクロコンビユー夕を構成する半導 体集積回路装置 MP Cにおいてクロック信号の立ち上がりエッジと立 ち下がりエツジの位相差を変化させた場合に測定されるノィズの特性 例を示す。 この場合、 半導体集積回路装置 MP Cは、 そのクロック信号 周波数 f 。が 2 OMH zのような比較的高周波数とされる。 なお図面に おいてはクロック信号周波数の 2倍以下の周波数である 30 MH z以 下のような周波数帯は図示されていない。第 7図はクロック信号の立ち 上がりェッジと立ち下がりエツジの位相差が 1 / 2の場合の測定例で あり、 第 8図は位相差が約 2/5 (42%) の場合の測定例である。 第 8図は、 60MH z〜 1 00MH zの F Mラジオ周波数帯に入るような、 3次〜 5次高調波ノイズの強度が約 1 0 dB低減されていることを示 している。第 9図はクロック信号の立ち上がりエッジと立ち下がりエツ ジの位相差を変化させていった場合の、第 2次〜第 6次高調波ノィズの 強度を示したグラフである。このグラフからも高調波毎に位相差により ノィズの強度が変化することが明らかである。 7 to 9 are measured when the phase difference between the rising edge and the falling edge of the clock signal is changed in the semiconductor integrated circuit device MPC constituting the micro-computer shown in FIG. Characteristics of noise Here is an example. In this case, the semiconductor integrated circuit device MPC has the clock signal frequency f. Is a relatively high frequency, such as 2 OMHz. Note that the drawing does not show a frequency band of 30 MHz or less, which is twice the frequency of the clock signal or less. Fig. 7 shows a measurement example when the phase difference between the rising edge and the falling edge of the clock signal is 1/2, and Fig. 8 shows a measurement example when the phase difference is about 2/5 (42%). is there. FIG. 8 shows that the intensity of the third to fifth harmonic noise, which falls into the FM radio frequency band from 60 MHz to 100 MHz, is reduced by about 10 dB. FIG. 9 is a graph showing the intensity of the second to sixth harmonic noise when the phase difference between the rising edge and the falling edge of the clock signal is changed. It is clear from this graph that the noise intensity changes due to the phase difference for each harmonic.
第 1 0図は半導体集積回路装置 MP Cを樹脂によって封止された半 導体電子部品をプリン ト基板のような実装基板に実装した構成から発 生する電磁波ノイズの放射の一例を示す。 FIG. 10 shows an example of radiation of electromagnetic wave noise generated from a configuration in which semiconductor electronic components in which a semiconductor integrated circuit device MPC is sealed with a resin are mounted on a mounting substrate such as a print substrate.
プリント基板の様な電子部品実装用の配線基板 6 6は、特に制限され ないが、 電源 Vc c給電用導体面と、 電源 Gnd給電用導体面と、 複数 の信号配線層とからなるようないわゆる多層配線基板から構成される。 この種の多層配線基板によって、比較的高周波数の動作をする半導体集 積回路装置を含む電子部品 6 3に対し比較的低電源ィンピ一ダンスの もとで電源電流の供給が可能となり、また配線基板それ自体のサイズの 増大や信号配線 6 5の長大化、信号配線 6 5相互の不所望な電気的結合 ができるだけ避けられるようにされる。 A wiring board 66 for mounting electronic components, such as a printed board, is not particularly limited. It is composed of a multilayer wiring board. This type of multilayer wiring board enables supply of power supply current to electronic components 63 including semiconductor integrated circuit devices operating at relatively high frequency under relatively low power supply impedance. An increase in the size of the substrate itself, an increase in the length of the signal wiring 65, and undesired electrical coupling between the signal wirings 65 are avoided as much as possible.
半導体電子部品 63は、半導体集積回路装置 M P Cを構成するシリコ ンチップ 64から成るような半導体基板を樹脂によって封止した樹脂 パッケージ部品とされている。 そして、 上記半導体基板上に構成された 回路に接続される電源配線 (V c c, Gnd) は、 半導体電子部品 6 3 の接続端子 62であるリード (ピン) を介してブリント基板 66等に構 成される電源配線 6 1に接続され、 それに電源電流が供給される。半導 体集積回路装置の半導体基板上に構成された回路が動作する際に電源 配線を流れる電流は、プリント基板に結合される図示しない電源供給部 からプリント基板上の電源配線 6 1、半導体集積回路装置の接続端子 6 2を経由して供給される。 そこで、 上記回路が動作することで電源配線 6 1を流れる電流により発生する電磁波ノイズは、半導体基板上の電源 配線 (Vc c , Gnd) のみならず、 接続端子 62、 プリント基板上の 電源配線 6 1からも放射される可能性を持つ。 The semiconductor electronic component 63 is a resin package component in which a semiconductor substrate such as a silicon chip 64 constituting the semiconductor integrated circuit device MPC is sealed with a resin. And formed on the semiconductor substrate. The power supply wiring (Vcc, Gnd) connected to the circuit is connected to the power supply wiring 61 formed on the printed circuit board 66 and the like via the lead (pin) which is the connection terminal 62 of the semiconductor electronic component 63, It is supplied with power supply current. When the circuit formed on the semiconductor substrate of the semiconductor integrated circuit device operates, the current flowing through the power supply wiring is supplied from a power supply unit (not shown) coupled to the printed circuit board to the power supply wiring 61 on the printed circuit board and the semiconductor integrated circuit. It is supplied via connection terminals 62 of the circuit arrangement. Therefore, the electromagnetic wave noise generated by the current flowing through the power supply wiring 61 due to the operation of the circuit described above is generated not only by the power supply wiring (Vcc, Gnd) on the semiconductor substrate, but also by the connection terminal 62 and the power supply wiring 6 on the printed circuit board. It has the possibility of being radiated from one.
第 1 1図に半導体集積回路装置 MP Cを用いたデータ処理システム から発生する電磁波ノイズの一例を示す。 図面では、 図示の複雑化を避 けるため、電源端子として V c cと Gndとの 2つを開示しているけれ ども、マイクロコンビュ一夕 73を構成する半導体集積回路装置 MP C においては、該半導体集積回路装置内の各種回路が所望の動作をするよ う、例えば一つの電源端子 V c cと一つの基準電位側電源端子 Gndと の対を複数個設定することが行われる。このような複数の電源端子設定 の場合であっても、電磁波ノィズの点では本発明の電源端子とみなされ る。 FIG. 11 shows an example of electromagnetic wave noise generated from a data processing system using the semiconductor integrated circuit device MPC. In the drawings, two power supply terminals, Vcc and Gnd, are disclosed to avoid complication of the drawing, but in the semiconductor integrated circuit device MPC constituting the microcomputer 73, the power supply terminals are not shown. For example, a plurality of pairs of one power supply terminal Vcc and one reference potential side power supply terminal Gnd are set so that various circuits in the integrated circuit device perform desired operations. Even if such a plurality of power supply terminals are set, they are regarded as the power supply terminals of the present invention in terms of electromagnetic noise.
マイクロプロセッサ 73やドライノ I C 74〜76、RAM7 1〜7 Microprocessor 73, dryno IC 74-76, RAM7 1-7
2等の半導体集積回路装置は、 それそれに電源配線 (V c c及び Gn d) が接続され、 それそれがクロック信号 CKに同期して動作する。 そ の結果として電源配線を流れる電流により電磁波ノイズを発生する。な おこれら半導体集積回路装置に接続されるデ一夕処理システムのプリ ント基板上に構成された電源配線にも、半導体集積回路装置が動作する クロック信号に同期して電流が流れ、電磁波ノイズを発生することとな る。第 1 1図のデ一夕処理システムには、 信号の出力のための接続コネ クタ A, B及び Cが設けられ、 ドライノ I C 7 6, 7 5 , 7 4にそれそ れ結合される。 Semiconductor integrated circuit devices such as 2 are connected to power supply wiring (V cc and Gnd), which operate in synchronization with the clock signal CK. As a result, electromagnetic noise is generated by the current flowing through the power supply wiring. In addition, a current also flows through the power supply wiring on the printed circuit board of the data processing system connected to these semiconductor integrated circuit devices in synchronization with a clock signal for operating the semiconductor integrated circuit device, and electromagnetic wave noise is generated. What happens You. The data processing system shown in FIG. 11 is provided with connection connectors A, B, and C for signal output, which are respectively coupled to dryno ICs 76, 75, and 74.
なお、 図示しないが、 電子システムにおいては、 プリント基板のよう な実装基板の半導体集積回路装置の電源端子に近い電源配線間につな がるバイパスコンデンサのようないわゆるノィズ対策用電子部品が設 けられる。これによつて実装基板における電源配線にできるだけノイズ が乗らないようにされる。但し、 ノイズ対策用電子部品は、 ノイズ量を 減少させる上で有効であるが、ノイズ量をゼロに抑えることができるも のではない。 そこで、 本発明の半導体集積回路装置が効果的となる。 ここで、第 1図の半導体集積回路装置 M P Cにおけるタイミング調整 回路 T A D Jに適用される夕イ ミング調整回路の具体的回路例につい て説明する。 Although not shown, the electronic system is provided with so-called noise countermeasure electronic components such as a bypass capacitor which is connected between power supply wires near a power supply terminal of the semiconductor integrated circuit device on a mounting board such as a printed board. Can be This minimizes noise on the power supply wiring on the mounting board. However, electronic components for noise suppression are effective in reducing the amount of noise, but they cannot reduce the amount of noise to zero. Therefore, the semiconductor integrated circuit device of the present invention becomes effective. Here, a specific circuit example of the evening adjustment circuit applied to the timing adjustment circuit TADJ in the semiconductor integrated circuit device MPC of FIG. 1 will be described.
夕イ ミング調整のための基本クロック信号は第 1図のクロックパル ス発生回路 C P Gから供給される。第 1図のクロックパルス発生回路 C P Gは、 特に制限されないが、 自走型となるよう、 発振回路と、 その出 力を受けるィンバ一夕回路から成るような波形整形回路と、波形整形回 路の出力を受ける分周回路とからなる様な構成とされる。回路 C P Gに おける発振回路は、半導体集積回路装置 M P Cの図示しない外部端子に 接続されるセラミック振動子若しくは水晶振動子によってその発振周 波数が比較的正確に設定される。波形整形回路は、 発振回路から出力さ れる発振信号に基づいて、パルス信号として好適な波形の発振信号を形 成する。 分周回路は、 発振信号を分周し、 クロック信号 C K、 第 1図の 入出力ポート I O P 1乃至 I O P 4の動作のための比較的低周波の周 辺回路用クロック信号を形成する。特に制限されないが、 クロック信号 C K及びそれに対し逆相にされた図示しないクロック信号は立ち上が りエッジと立ち下がりエッジの位相差が実質的に 1/2となるように される。 夕イ ミング調整回路 TAD Jは、 特に制限されないが、 クロッ クパルス発生回路 C P Gから供給されるクロック信号 C Kとそれに対 して逆相にされたクロック信号のうち、クロック信号 C Kのタイ ミング を調整するように構成される。 The basic clock signal for evening adjustment is supplied from the clock pulse generator CPG in FIG. The clock pulse generation circuit CPG in FIG. 1 is not particularly limited, but a self-propelled oscillation circuit, a waveform shaping circuit composed of an inverter circuit receiving the output, and a waveform shaping circuit. And a frequency dividing circuit receiving the output. The oscillation frequency of the oscillation circuit in the circuit CPG is set relatively accurately by a ceramic oscillator or a crystal oscillator connected to an external terminal (not shown) of the semiconductor integrated circuit device MPC. The waveform shaping circuit forms an oscillation signal having a waveform suitable as a pulse signal based on the oscillation signal output from the oscillation circuit. The frequency divider divides the oscillation signal to generate a clock signal CK and a relatively low frequency peripheral circuit clock signal for the operation of the input / output ports IOP1 to IOP4 in FIG. Although not particularly limited, the clock signal CK and the clock signal (not shown) inverted in phase from the clock signal CK rise. The phase difference between the leading edge and the falling edge is set to substantially 1/2. Although there is no particular limitation, the evening adjustment circuit TADJ adjusts the timing of the clock signal CK of the clock signal CK supplied from the clock pulse generation circuit CPG and the clock signal inverted from the clock signal CK. It is configured as follows.
第 1 2図には夕イ ミング調整回路 TAD Jを構成するタイ ミング調 整要素回路 1 0 0の一例が示され、第 1 3図にはその出力信号波形の一 例が示される。 尚、 夕イ ミング調整回路 TAD Jはタイミング調整要素 回路 1 0 0だけで構成することも可能である。 FIG. 12 shows an example of a timing adjustment element circuit 100 constituting the timing adjustment circuit TADJ, and FIG. 13 shows an example of the output signal waveform. It should be noted that the evening adjustment circuit TADJ can be constituted by only the timing adjustment element circuit 100.
第 1 2図に示された回路 1 0 0は、 遅延回路 d 1乃至 d 4、 ナンドゲ ート回路 G l, ノアゲート回路 G 2 , G 3、 及びィンバ一夕回路 I V 1 乃至 I V 3を持つ。インバー夕回路 I V 1を介して得られるクロック信 号 CKd lは、 遅延回路 d 1により立ち上がりエッジに d 1だけの遅延 を生じさせ、インバ一夕回路 I V 2を介して得られるクロック信号 C K d 2は、 遅延回路 d 2により立ち下がりエッジに d 2だけの遅延を生じ させ、 イ ンバー夕回路 I V 3を介して得られるクロック信号 CKd 3は、 遅延回路 d 3及び d 4により立ち上がりエッジに d 3、立ち下がりエツ ジに d 4だけの遅延を生じさせ、それそれ立ち上がりエッジと立ち下が りエッジの位相差を 1/2から異なるものとする。 これにより、 夕イ ミ ング調整回路の出力するク口ック信号に同期して動作する論理回路ブ 口ックにおいては、ク口ック信号の立ち上がりにおいて回路が動作する ことにより流れる電流 g Rとクロック信号の立ち下がりにおいて回路 素子が動作することにより流れる電流 gFの位相差を 1 /2から変更 することができる。 このとき、 半導体集積回路装置 MP Cが動作する周 波数と、高調波ノィズを低減したい周波数帯にあたる高調波ノィズの次 数に対応して、上記タイ ミング調整回路における遅延回路の遅延時間を 設定しておくことにより、特定周波数帯に発生する電磁波ノイズを低減 することが出来る。第 1 2図に示すタイ ミング調整要素回路 1 0 0にお いて、 クロック信号 CKd i乃至 CKd 3の 3種類のクロック信号を生成 しているが、 生成するク口ック信号の数や遅延時間、 ク口ック信号の生 成方法は変更可能である。 The circuit 100 shown in FIG. 12 has delay circuits d1 to d4, a NAND gate circuit Gl, NOR gate circuits G2 and G3, and an inverter circuit IV1 to IV3. The clock signal CK dl obtained via the inverter circuit IV 1 is delayed by the delay circuit d 1 by d 1 at the rising edge, and the clock signal CK d 2 obtained via the inverter circuit IV 2 d is the falling edge by the delay circuit d 2 is caused a delay of only d 2, the clock signal CK d 3 obtained through Lee members evening circuit IV 3 is the rising edge by the delay circuit d 3 and d 4 3. Delay the falling edge by d4, and make the phase difference between the rising edge and the falling edge different from 1/2. As a result, in a logic circuit block that operates in synchronization with the peak signal output from the evening adjustment circuit, the current g R that flows when the circuit operates at the rising edge of the peak signal is output. The phase difference of the current g F flowing by the operation of the circuit element at the falling edge of the clock signal can be changed from 1/2. At this time, the delay time of the delay circuit in the timing adjustment circuit is set in accordance with the frequency at which the semiconductor integrated circuit device MPC operates and the order of the harmonic noise corresponding to the frequency band in which the harmonic noise is to be reduced. By setting, it is possible to reduce electromagnetic noise generated in a specific frequency band. And have you to timing adjustment element circuit 1 0 0 shown in the first FIG. 2, but to generate a three clock signals of the clock signal CK d i to CK d 3, Ya number of generated click-locking signal The method of generating the delay time and the mouth signal can be changed.
第 1 4図は、第 1 2図の回路によって生成された複数のクロック信号 の内の、 1のクロック信号を選択する選択回路(マルチプレクサとも称 する) 1 0 1の一例を示す。 同図に示されるマルチプレクサ 1 0 1は、 選択制御信号 S 1乃至 S 3によって動作制御される選択ゲート回路 G 4乃至 G 6を含む。 このマルチプレクサ 1 0 1は、 第 1 2図に示すタイ ミング調整要素回路 1 00で生成したクロック信号 CKd l乃至クロッ ク信号 CKd 3の内、 選択制御信号 S 1乃至 S 3のうちァクティブな状 態にある信号により選択されるクロック信号を CKs e iとして出力す る。選択制御信号 S 1乃至 S 3は、 図示しない物理的なスィツチ機構に より、その内の何れか 1つのみがアクティブとなるようにされてもよい が、 実施例では、 マイクロコンピュー夕による制御構成の利用が図られ る。 FIG. 14 shows an example of a selection circuit (also referred to as a multiplexer) 101 for selecting one clock signal from a plurality of clock signals generated by the circuit of FIG. The multiplexer 101 shown in the figure includes select gate circuits G4 to G6 whose operations are controlled by select control signals S1 to S3. The multiplexer 1 0 1, of the first 2 clock signal CK dl to clock signal CK d 3 generated by timing adjustment element circuit 1 00 shown in FIG, Akutibu a Jo of the selection control signals S 1 to S 3 The clock signal selected by the active signal is output as CK sei . Only one of the selection control signals S1 to S3 may be made active by a physical switch mechanism (not shown). Use of the configuration is attempted.
第 1 5図は選択制御信号 S 1乃至 S 3を形成する選択信号形成回路 の第 1の例を示す。選択信号形成回路は、 保持すべき内容がプログラマ ブルに設定可能とされ、その保持内容によってタイ ミング調整量を指示 する設定回路の一例を構成する。第 1 5図に示される選択信号形成回路 は、第 1図の半導体集積回路装置のァドレスバス AB S 2によって選択 される特定ァドレスを持ち、ァドレス選択状態において第 1図のデータ バス D B S 2からのデータを取り込む 1 ビッ トレジス夕 R S 1乃至 R S 3から成る。 FIG. 15 shows a first example of a selection signal forming circuit for forming the selection control signals S1 to S3. The selection signal forming circuit is capable of setting contents to be held in a programmable manner, and constitutes an example of a setting circuit for instructing a timing adjustment amount based on the held contents. The selection signal forming circuit shown in FIG. 15 has a specific address selected by the address bus ABS2 of the semiconductor integrated circuit device of FIG. 1, and the data from the data bus DBS2 of FIG. 1 in the address selection state. It consists of a 1-bit register RS1 to RS3.
レジス夕 1 3 1乃至1 33は、 マイクロコンピュータ起動時の初期 状態設定プログラムのような設定プログラムによって、出力 S 1乃至 S 3のうち 1つがァクティブレベルとなるように状態設定される。第 1 6 図には選択制御信号 S 1乃至 S 3の値に対するクロック信号 CKd l乃 至 CKd 3の選択態様が例示されている。 Regis evening 1 3 1 to 133 A setting program such as a state setting program sets the state so that one of the outputs S1 to S3 is at the active level. FIG. 16 exemplifies a manner of selecting the clock signals CK dl to CK d 3 with respect to the values of the selection control signals S 1 to S 3.
第 1 7図には、 選択信号形成回路の第 2の例を示す。 この第 2の例で は、上記第 1の例と同様にァドレスバス AB S 2及びデータバス D B S 2によって初期設定される 1ビッ トレジス夕 Rs dA, Rs dBを持つ。 レ ジス夕の出力 SdA, SdBは、 第 1 8図に示されるインバー夕回路 I V 4, I V 5及びアンドゲート回路 G 7乃至 G 9からなる 2ビッ トデコ一 ダに供給され、 それによつて選択信号 S 1乃至 S 3に変換される。第 1 9図にはレジス夕の出力 S dA, S d Bをデコードして得られる信号 S 1 乃至 S 3の値に対するクロック信号 CKd l乃至 CKd 3の選択態様が例 示されている。第 1 9図において記号氺はその欄の値を無視することを 意味する。 FIG. 17 shows a second example of the selection signal forming circuit. In the second example, as in the first example, there are one-bit registers R s dA and R s dB which are initialized by the address bus ABS 2 and the data bus DBS 2. The outputs S dA and S dB of the register are supplied to a 2-bit decoder composed of inverter circuits IV 4 and IV 5 and AND gate circuits G 7 to G 9 shown in FIG. The signals are converted into selection signals S1 to S3. Output S dA of the first 9 FIG Regis evening, selected aspects of the clock signal CK dl to CK d 3 for the values of signals S 1 to S 3 is obtained by decoding the S d B are shown examples. In Fig. 19, the symbol 氺 means that the value in that column is ignored.
第 2 0図にデジタル遅延回路を用いたタイ ミング調整回路 TAD J の別の一例を示す。第 2 1図には第 20図のタイ ミング調整回路の出力 波形の一例を示す。第 2 0図においては、 前述のようなパルス発生回路 C P Gからの基本クロック信号 f c kを受け、その基本クロック信号 f e kによって周波数遁倍制御がされて 8倍周期クロック信号 f 。 s cを生成 する制御発振回路 C〇 S Cと、 計数値レジス夕 C CRと、 基本クロック 信号 f c kの立ち上がりによって初期状態にされ、 制御発振回路 C 0 S Cからの 8遲倍クロック信号 f 。s cをカウント入力とし、且つレジスタ C CRによってカウン ト数がプログラムされるカウン夕 CNTRとを 持つ。 これによる図示のタイ ミング調整回路においては、 計数値レジス 夕 C CRに指定した期間、 Vh i gh状態とされ、 その後 Vl QWとされる クロック信号 f c k'がカウン夕 CNTRから生成される。 これに応じて、 クロック信号: f c k'は、 例えば、 計数値レジス夕 C CRによって 3が指 定されていたなら、その立ち上がりエッジと立ち下がりエッジの位相差 が 3/ 8となる。同様に 5が指定されていたなら位相差が 5/8とされ、 2が指定されていたなら位相差が 1 /4となるクロック信号が生成可 能となる。制御発振回路 C O S Cにより生成すべき n倍周期クロック信 号の遞倍値、 及び計数値レジス夕 C CRへの値の指定は、 特に限定され ないが、当該半導体集積回路装置 MP Cが第 1図のようにマイクロコン ビュー夕であるなら、中央処理装置 CB 1により制御される制御レジス 夕を利用し、または中央処理装置 CB 1により参照可能な記憶回路にレ ジス夕に指定すべき内容を指定することで設定されるものであってよ い。 FIG. 20 shows another example of a timing adjustment circuit TAD J using a digital delay circuit. FIG. 21 shows an example of the output waveform of the timing adjustment circuit of FIG. In the second 0 view, the basic clock signal f ck receiving, the basic clock signal f e k by the frequency遁倍control has been eight times periodic clock signal f from the pulse generator CPG as described above. The control oscillation circuit C scSC that generates sc , the count value register CCR, and the basic clock signal f ck rise to the initial state by the rise of the clock signal, and the eight-times-delayed clock signal f from the control oscillation circuit C 0 SC. It has a counter CNTR whose sc is a count input and whose count is programmed by the register CCR. In timing adjusting circuit shown by this counter value registers evening period specified in C CR, it is a V hi gh state, the clock signal f ck 'which subsequently a V l QW is generated from counter evening CNTR. In response, Clock signal: fc k ', for example, if 3 has been specified by the count register evening C CR, the phase difference between the rising and falling edges of 3/8. Similarly, if 5 is specified, the phase difference will be 5/8, and if 2 is specified, a clock signal with a phase difference of 1/4 can be generated. Control oscillator circuit The designation of the multiplier value of the n-times cycle clock signal to be generated by the COSC and the value of the count register CCR is not particularly limited, but the semiconductor integrated circuit device MPC shown in FIG. If it is a micro-computer, use the control register controlled by the central processing unit CB 1 or specify the contents to be specified for the register in the storage circuit that can be referenced by the central processing unit CB 1. It may be set by doing.
第 2 2図は夕イ ミング調整回路 TAD Jを有する半導体集積回路装 置の例を示す。第 2 2図に示される半導体集積回路装置は、 これに入力 されるクロック信号 C Kに基づき内部クロック信号を第 1図のクロッ クパルス発振回路 C P Gにより生成し、上記クロックパルス発振器によ り生成したクロック信号を夕イミング調整回路 TAD Jにおいて、電源 配線を流れる電流に所定の位相差を生じるようにされたクロック信号 Φ Κ 2, 3を生成し、 半導体集積回路装置を構成する中央処理装 置等の論理回路プロック 1乃至論理回路プロック 3に供給する。本構成 は、 第 2図の (a) に示す単相クロック信号により動作する半導体集積 回路装置に適用される。タイミング調整回路 TAD Jにより生成された クロック信号 ø 1乃至 ø 3は、第 1 4図のマルチプレクサにより選択さ れたクロック信号 C Ks e 若しくは第 2 0図の夕イ ミング調整回路の 出力: c k 'である。 また論理回路ブロック 1乃至論理回路ブロック 3 に対して、第 1 2図の夕イ ミング調整要素回路 1 00それ自体で夕イミ ング調整回路 TAD Jを構成して、 その出力 CKd l乃至 CKd 3を供給 するものであってもよい。 これにより、 各論理回路プロックの動作マ一 ジンを考慮して、各論理回路プロックに与えるクロック信号の立ち上が りエッジと立ち下がりエツジの位相差を適切なものとすることが出来 る。 FIG. 22 shows an example of a semiconductor integrated circuit device having an evening adjustment circuit TADJ. The semiconductor integrated circuit device shown in FIG. 22 generates the internal clock signal based on the clock signal CK input thereto by the clock pulse oscillation circuit CPG of FIG. 1, and generates the clock signal generated by the clock pulse oscillator. In the timing adjustment circuit TAD J, a clock signal Φ Κ 2, 3 is generated so that a predetermined phase difference is generated in the current flowing through the power supply wiring, and the central processing unit and the like constituting the semiconductor integrated circuit device are generated. It is supplied to logic circuit blocks 1 to 3. This configuration is applied to a semiconductor integrated circuit device operated by a single-phase clock signal shown in (a) of FIG. In ck ': timing adjustment circuit TAD J clock signal ų 1 to ų 3 generated by the output of the evening Lee timing adjustment circuit of the selected clock signal CK se or second 0 views by the first 4 Figure multiplexer is there. Also, with respect to the logic circuit blocks 1 to 3, the evening adjustment element circuit 100 of FIG. 12 itself constitutes an evening adjustment circuit TADJ, and outputs CK dl to CK d 3 Supply May be used. Thus, the phase difference between the rising edge and the falling edge of the clock signal given to each logic circuit block can be made appropriate in consideration of the operation margin of each logic circuit block.
第 23図の半導体集積回路装置は、これに入力されるクロック信号 C The semiconductor integrated circuit device shown in FIG.
Kに基づき第 1図のクロックパルス発振回路 C P Gにおいて内部クロ ック信号 01、 02を生成し、 これらのクロック信号 ø 1、 02をそれ それ夕イ ミング調整回路 TAD J 1及び TAD J 2により電源配線を 流れる電流に所定の位相差を生じるようにされたクロック信号 ø 、 02'を生成し、 半導体集積回路装置を構成する中央処理装置等の論理 回路プロヅク 1及び 2に供給するものである。 本構成は、 第 4図の (a — 2) , (a— 3) に示す多相クロック信号により動作する半導体集積 回路装置に適用される。夕ィ ミング調整回路 TAD J 1及び TAD J 2 により生成されるクロック信号 ø 1'、 2'の立ち上がりエッジと立ち 下がりエッジの位相差は、各論理回路プロック 1及び 2の動作マージン を考慮して、 それそれ適切なものとすることが出来る。 The internal clock signals 01 and 02 are generated in the clock pulse oscillation circuit CPG shown in Fig. 1 based on K, and these clock signals ø1 and 02 are respectively supplied by the timing adjustment circuits TAD J1 and TAD J2. It generates clock signals ø, 02 'that cause a predetermined phase difference in the current flowing through the wiring, and supplies the clock signals ø, 02' to logic circuit processes 1 and 2 such as a central processing unit constituting a semiconductor integrated circuit device. This configuration is applied to a semiconductor integrated circuit device operated by a multi-phase clock signal shown in (a-2) and (a-3) of FIG. The phase difference between the rising and falling edges of the clock signals ø1 'and 2' generated by the timing adjustment circuits TAD J1 and TAD J2 is determined by taking into account the operating margin of each logic circuit block 1 and 2. , Each can be appropriate.
第 24図の半導体集積回路装置は、その内部にクロックパルス発生回 路 CPGを有せず、外部より供給されるクロック信号 CKに基づき論理 回路ブロック 1及び 2が動作するように構成される。 この場合、 入力さ れたクロック信号 CKをタイ ミング調整回路 TAD Jにおいて、電源配 線を流れる電流に所定の位相差を生じるようにされたクロック信号 ø I 2を生成し、 半導体集積回路装置を構成する中央処理装置等の論 理回路プロック 1及び 2に供給する。 これにより、 内部にクロヅクパル ス発生回路を有しない半導体集積回路装置に対しても、本発明の適用が 可能となる。 The semiconductor integrated circuit device shown in FIG. 24 does not have a clock pulse generation circuit CPG therein, and is configured so that the logic circuit blocks 1 and 2 operate based on a clock signal CK supplied from the outside. In this case, the input clock signal CK is generated by the timing adjustment circuit TADJ to generate a clock signal øI2 that causes a predetermined phase difference in the current flowing through the power supply wiring, and the semiconductor integrated circuit device is manufactured. It is supplied to the logic blocks 1 and 2 of the central processing unit, etc. to be configured. Thus, the present invention can be applied to a semiconductor integrated circuit device having no clock pulse generating circuit inside.
第 2 5図にはタイ ミング調整回路を有するデータ処理システムの一 例が示される。発振器により生成したクロック信号 C Kに基づき、 タイ ミング調整回路は、データ処理システムの電源配線を流れる電流に所定 の位相差を生じるよう、 0 1、 Φ 2、 0 3を設定したクロック信号を生 成し、 半導体集積回路装置に供給するものである。上記半導体集積回路 装置は、 特に制限されないが、 内部に発振器を有さず、 供給されるクロ ック信号に基づいて動作するものであってもよく、または発振器を有す るものであってもよい。 これにより、 内部に夕イ ミング調整回路 T A D Jを有しない半導体集積回路装置を使用するデータ処理システムであ つても、上記半導体集積回路装置に供給するク口ック信号の立ち上がり ェッジと立ち下がりエツジの位相差を変更することで、デ一夕処理シス テム全体として、電源配線を流れる電流の位相差を変更することが可能 となり、特定の周波数帯に発生する高調波ノイズを低減することが可能 となる。 Figure 25 shows an example of a data processing system with a timing adjustment circuit. An example is shown. Based on the clock signal CK generated by the oscillator, the timing adjustment circuit generates a clock signal with 0, Φ2, and 03 set so that a predetermined phase difference occurs in the current flowing through the power supply wiring of the data processing system. Then, it is supplied to the semiconductor integrated circuit device. Although the semiconductor integrated circuit device is not particularly limited, it may have no oscillator therein and operate based on a supplied clock signal, or may have an oscillator. Good. As a result, even in a data processing system using a semiconductor integrated circuit device having no internal timing adjustment circuit TADJ, a rising edge and a falling edge of a clock signal supplied to the semiconductor integrated circuit device can be reduced. By changing the phase difference, it becomes possible to change the phase difference of the current flowing through the power supply wiring as a whole of the data processing system, thereby reducing the harmonic noise generated in a specific frequency band. Become.
第 2 2図乃至第 2 5図において、夕イミング調整回路により生成する クロック信号 0 1、 0 2、 3及び 0 1,、 ø 2,の立ち上がりエッジ及 び立ち下がりエッジの位相差は、 同一であっても、 相互に異なっていて もよい。上記クロック信号が供給される論理回路プロック若しくは半導 体集積回路装置の動作マージンを考慮して、ク口ック信号の立ち上がり エッジと立ち下がりエツジの位相差を適切なものとすることができる。 また上記ク口ック信号 1乃至? i 3若しくは ø 1 '乃至 ø 2 'の立ち 上がりエッジ及び立ち下がりエッジのタイ ミングが相互に異なるよう な構成を採ることもできる。それにより論理回路プロック 1乃至 3のク 口ック信号の立ち上がりに同期して流れる電流とクロック信号の立ち 下がりに同期して流れる電流が時間的に分散することとなり、即ち第 2 図の (b ) に示す g R及び g Fが時間的に分散し、 且つ電流強度を下げ ることができる。 これにより、 より一層のノイズの低減が可能となる。 第 2 6図には夕イ ミング調整回路を有するデータ処理システムを自 動車の搭載機器に利用した例が示される。自動車には A M/ F Mラジオ 受信機が搭載され、また自動車搭載用の T V受像機を搭載したものもあ る。 その一方で自動車のエンジンコントロール、 エアバック、 エアコン ディショナ一等の制御用にマイクロコンピュー夕を使用したデ一夕処 理システムが搭載され、その動作クロック信号周波数は例えば 8 M H z 〜 2 0 M H zとなっている。これらのデ一夕処理システムは自動車のバ ッテリ一より給電されており、デ一夕処理システムに使用しているマイ クロコンピュー夕等の半導体集積回路装置と上記バッテリーに接続さ れる電源ケーブルにも、半導体集積回路装置の動作ク口ック信号に同期 して電流が流れる。 その結果、 電磁波ノィズにより電源ケーブルがモノ ポールアンテナのように動作することとなる。上記電磁波ノィズのうち、 A M / F Mラジオ周波数帯にあたる高調波ノィズが自動車のアンテナ より受信され、 ラジオの受信感度が悪化し、 同様に T V周波数帯に発生 する高調波ノイズにより、映像ノイズや音声ノイズを生じることとなる。 この種の電磁波ノィズは、車載電子システムにおいて特に大きく問題 とされがちとなる。 In FIGS. 22 to 25, the phase difference between the rising edge and the falling edge of the clock signals 01, 02, 3, and 01, ø2 generated by the evening adjustment circuit is the same. May be different from each other. The phase difference between the rising edge and the falling edge of the clock signal can be made appropriate in consideration of the operation margin of the logic circuit block or the semiconductor integrated circuit device to which the clock signal is supplied. In addition, the mouth signal 1 to? It is also possible to adopt a configuration in which the rising edge and the falling edge of i3 or ø1 'to ø2' are different from each other. As a result, the current flowing in synchronization with the rising edge of the clock signal of the logic circuit blocks 1 to 3 and the current flowing in synchronization with the falling edge of the clock signal are temporally dispersed, that is, (b) in FIG. ) g R and g F are temporally dispersed illustrated in, and current intensity can Rukoto lowered. As a result, noise can be further reduced. Fig. 26 shows an example in which a data processing system having an evening adjustment circuit is used for equipment mounted on a vehicle. Some vehicles are equipped with AM / FM radio receivers, and some are equipped with TV receivers for vehicles. On the other hand, a data processing system using a microcomputer is installed to control the engine control, airbag, air conditioner, etc. of the car, and its operation clock signal frequency is, for example, 8 MHz to 20 MHz. z. These data processing systems are supplied with power from the battery of the vehicle, and are connected to the semiconductor integrated circuit device such as a micro computer used in the data processing system and the power cable connected to the battery. Then, a current flows in synchronization with the operation peak signal of the semiconductor integrated circuit device. As a result, the power cable operates like a monopole antenna due to the electromagnetic noise. Of the above electromagnetic noise, the harmonic noise corresponding to the AM / FM radio frequency band is received from the antenna of the car, and the radio reception sensitivity deteriorates. Similarly, the video noise and audio noise due to the harmonic noise generated in the TV frequency band Will occur. This kind of electromagnetic noise tends to be a particularly serious problem in vehicle-mounted electronic systems.
すなわち、 車においては、 車自体の安全性が第 1優先的に重視され、 他の電子システムに影響を与える可能性のある電磁波ノィズを含むノ ィズは特に厳しく見られがちとなる。 他方、 車載の電子システムは、 そ れが車のコンソールパネル内側やエンジンルーム等の著しく限られた 狭い空間内に設置されざるを得ないのが通常である。 そのために、 複数 の電子システム相互を電気的にも物理的に十分に離した状態にするこ とが困難である、 という事情がある。 In other words, in vehicles, the safety of the vehicle itself is given top priority, and noise including electromagnetic noise that may affect other electronic systems tends to be particularly severe. On the other hand, in-vehicle electronic systems usually have to be installed in a very limited space, such as inside the console panel of a car or in an engine room. For this reason, it is difficult to keep a plurality of electronic systems sufficiently electrically and physically separated from each other.
更に加えるに、車搭載のラジオ受信機の様な無線通信装置においては、 固定建築物などに固定的に設置される電子システムの場合と異なり、車 移動に伴って電磁波の電界強度が著しく大きく変化する特徴を持ち、極 微弱な電界強度の通信電磁波に対してのノィズの影響も排除できるこ とが望まれるからである。 In addition, wireless communication devices such as on-board radio receivers are different from electronic systems that are fixedly installed in fixed buildings, etc. This is because the electric field strength of the electromagnetic wave changes remarkably greatly with movement, and it is desired that the influence of noise on communication electromagnetic waves with a very weak electric field strength can be eliminated.
そのため、上記タイ ミング調整回路を自動車に搭載するエンジンコン トロール等のためのマイクロコンピュー夕等の半導体集積回路装置や、 当該半導体集積回路装置を使用したデータ処理システムに用いること で、 A M/ F Mラジオ周波数帯や T V周波数帯に発生する高調波ノイズ を特に低減することが出来る。 Therefore, by using the timing adjustment circuit in a semiconductor integrated circuit device such as a microcomputer for engine control or the like mounted on an automobile or in a data processing system using the semiconductor integrated circuit device, AM / FM Higher harmonic noise generated in the radio frequency band and TV frequency band can be particularly reduced.
以上本発明者によってなされた発明を具体的に説明したが、本発明は それに限定されるものではなく、 その要旨を逸脱しない範囲において 種々変更可能である。半導体集積回路装置はマイクロプロセッサ、 マイ クロコンビュー夕と称されるような論理 L S Iに限定されず、ディジ夕 ル信号処理プロセッサ、 浮動小数点演算プロセッサ、 更にはプロセッサ と D R A M等の所望の機能を搭載して成るシステム ·オン ·チップ化さ れたようなシステム L S Iであってもよい。 Although the invention made by the present inventor has been specifically described above, the present invention is not limited thereto, and can be variously modified without departing from the gist thereof. Semiconductor integrated circuit devices are not limited to logic LSIs called microprocessors and microcontrollers, but are equipped with digital signal processing processors, floating-point arithmetic processors, and other desired functions such as processors and DRAMs. The system LSI may be a system-on-chip system.
また、第 2 0図に基づいて説明したタイミング調整回路 T A D Jにお けるカウン夕 C N T Rは、 シフ トレジス夕と見做すこともできる。 した がって、 上記タイミング調整回路において、 発振回路の出力によって動 作されかつその遅延量がタイ ミング調整すべき量に対応して設定され るディジ夕ル遅延回路を、前記発振回路の出力をシフ ト入力として受け そのシフ ト数がタイ ミング調整すべき量に対応して設定されるシフ ト レジスタ構成回路によって構成されるとものと考えることが可能であ る。 産業上の利用可能性 In addition, the counter C NTR in the timing adjustment circuit T ADJ described with reference to FIG. 20 can be regarded as a shift register. Therefore, in the above timing adjustment circuit, a digital delay circuit which is operated by the output of the oscillation circuit and whose delay amount is set in accordance with the amount to be time-adjusted is connected to the output of the oscillation circuit. It can be considered that the shift register is constituted by a shift register configuration circuit which receives as a shift input and sets the number of shifts corresponding to the amount to be adjusted. Industrial applicability
本発明は、 自動車用搭載機器に限らず、 ラジオ受信機や T V受信機等 の無線通信機器、 携帯電話や P D Aなどの携帯情報機器、 パーソナルコ ンピュー夕などのコンピュータ装置、 医療用機器等、 電磁波ノイズ耐性 が低く若しくは電磁波ノィズが重大な影響を及ぼし得る機器又は機器 と共に使用するデータ処理装置、 そして半導体集積回路装置に、 広く適 用することができる。 The present invention is not limited to on-vehicle devices, Use with wireless communication devices, portable information devices such as mobile phones and PDAs, computer devices such as personal computers, medical devices, etc., which have low electromagnetic noise immunity or whose electromagnetic noise can have a significant effect. It can be widely applied to data processing devices and semiconductor integrated circuit devices.
Claims
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP1999/002221 WO2000065651A1 (en) | 1999-04-27 | 1999-04-27 | Semiconductor integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP1999/002221 WO2000065651A1 (en) | 1999-04-27 | 1999-04-27 | Semiconductor integrated circuit |
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| Publication Number | Publication Date |
|---|---|
| WO2000065651A1 true WO2000065651A1 (en) | 2000-11-02 |
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| JP2004145435A (en) * | 2002-10-22 | 2004-05-20 | Matsushita Electric Ind Co Ltd | Semiconductor integrated circuit |
| US6875920B2 (en) | 2001-09-13 | 2005-04-05 | Hitachi, Ltd. | Semiconductor device and design support method of electronic device using the same |
| JP2005144848A (en) * | 2003-11-14 | 2005-06-09 | Kyocera Mita Corp | Image forming apparatus |
| JP2011061697A (en) * | 2009-09-14 | 2011-03-24 | Fujitsu Ltd | Semiconductor integrated circuit |
| JP2011159129A (en) * | 2010-02-01 | 2011-08-18 | Toyota Motor Corp | Multicore processor and in-vehicle electronic control unit using the same |
| US9659119B2 (en) | 2014-03-31 | 2017-05-23 | Socionext Inc. | Method and design apparatus |
| JP2021009083A (en) * | 2019-07-02 | 2021-01-28 | 三菱電機株式会社 | Active phased array antenna device, and power source control method |
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