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WO2000063827A1 - Integrated circuit with a controllable voltage regulator - Google Patents

Integrated circuit with a controllable voltage regulator Download PDF

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Publication number
WO2000063827A1
WO2000063827A1 PCT/EP2000/003429 EP0003429W WO0063827A1 WO 2000063827 A1 WO2000063827 A1 WO 2000063827A1 EP 0003429 W EP0003429 W EP 0003429W WO 0063827 A1 WO0063827 A1 WO 0063827A1
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WO
WIPO (PCT)
Prior art keywords
integrated circuit
voltage regulator
supply voltage
control signal
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2000/003429
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German (de)
French (fr)
Inventor
Uwe Weder
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
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Infineon Technologies AG
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Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Publication of WO2000063827A1 publication Critical patent/WO2000063827A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/57Protection from inspection, reverse engineering or tampering
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06KGRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00Record carriers for use with machines and with at least a part designed to carry digital markings
    • G06K19/06Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
    • G06K19/073Special arrangements for circuits, e.g. for protecting identification code in memory
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • Integrated circuits in particular those for use in portable data carriers such as chip cards, offer many manipulation and / or analysis incentives, since they are increasingly being used in security-critical areas such as access control, as a rechargeable money card or for generating electronic signatures.
  • circuit parts are mostly specially configured circuit parts or secret information stored in non-volatile memories.
  • circuit parts In order to prevent these details from being spied on, it has been proposed in the past to implement circuit parts in lower levels of the integrated circuit, so that they are covered by structures above them.
  • Other proposals aimed for an additional, preferably conductive, cover of the integrated circuit, which is included in the power supply and whose presence or intactness can be detected in order to influence the processing sequence in the integrated circuit accordingly.
  • encryption of the data exchange between components of a circuit on a single semiconductor chip has also been proposed.
  • the object of the present invention is to offer protection against such an analysis.
  • the integrated circuit according to the invention thus has a supply voltage regulator which is principally intended to stabilize the voltage on a charge store, in particular a buffer capacitor.
  • the charge storage can already be provided by the capacity of the integrated circuit itself.
  • this voltage regulator does not work constantly on one operating point, but its control properties are changed by a control unit.
  • the current profile fluctuations generated by the data processing part of the integrated circuit are superimposed by the fluctuations originating from the voltage regulator, so that the actual current profile is obscured and, with the same processing operations within the integrated circuit, different current profiles result due to the changes in the parameters of the control circuit and therefore no connection between Current profile and processing can be derived using statistical methods.
  • the capacity of the charge store is changed. different. This is equivalent in its effect to changing the Wi ⁇ derstands a longitudinal control transistor in a series regulator, as this is the time constant of the low pass through this transistor L jossregel- formed and the charge storage is influ- enced.
  • a change in the internal supply voltage towards lower values has a particularly advantageous effect, which in this case can also be slower, since then in particularly safety-critical processes the energy can be obtained solely from the charge store without this leading to profiling in the charge current .
  • the charge store can be recharged during non-safety-critical processes.
  • the figure shows an integrated circuit according to the invention, which is part of a circuit realized on a semiconductor chip.
  • the part of the entire integrated circuit which is not part of the invention and which is supplied by the internal supply voltage V DD int is represented by a dotted continuation of the supply voltage line.
  • the series regulating transistor 4 of a series voltage regulator 3 is connected between the terminal to which the external supply voltage V DD ext is applied and the one connection of a charge store designed as a buffer capacitor 2.
  • This is regulated by a Amplifier 7 driven.
  • the two inputs of crizver ⁇ wishes 7 are on the one hand connected to a reference voltage Uref and on the other hand, to the center tap of a voltage measuring means which functions as the actual voltage divider 5,. 6
  • the voltage divider 5, 6 is connected in parallel to the buffer capacitor 2. This circuit is initially intended to ensure that the internal supply voltage V DD int is kept at a value defined by the reference voltage Uref.
  • both the series regulating transistor 4 acting as an actuator of the voltage regulator, the resistors of the voltage divider 5, 6, the buffer capacitor 2 and also the reference voltage Uref can be changed, which is indicated by arrows, and can be controlled by a control circuit 1.
  • the changeability can be achieved, for example, by connecting additional corresponding components in parallel. In principle, it is sufficient if only one of the elements mentioned is designed to be changeable or is controlled. However, in order to obscure the actual current profile at the input terminal (V DD ext) in the sense of the task to be solved, it is advantageous if there are several possibilities which can be used alternately or together.
  • the changes controlled by the control unit 1 can be slow, for example in order to lower the internal supply voltage V DD int for certain operations by changing the reference voltage Uref or the voltage divider 5, 6, so that the supply of the data processing part (not shown) of the integrated circuit can be done only from the buffer capacitor 2.
  • This is of interest in security-critical data processing operations such as encryption, since then no specific current profile can be detected at the input terminals.
  • rapid, random changes which are in the level and frequency range of the typical current profile fluctuations, can also be useful in order to achieve a superimposition of the actual fluctuations with the imposed ones, which makes statistical evaluation more difficult or even impossible.
  • a particular advantage of the integrated circuit according to the invention is that the current concealment is not at the expense of additional power consumption.

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Computer Security & Cryptography (AREA)
  • General Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

Disclosed is a circuit integrated on a semiconductor-chip. The aim of the invention is to hide the current profile which can be detected on the input terminal of the supply voltage. To this end, the characteristics of a voltage regulator can be changed.

Description

Beschreibungdescription

Integrierte Schaltung mit steuerbarem SpannungsreglerIntegrated circuit with controllable voltage regulator

Integrierte Schaltungen insbesondere solche zur Verwendung in tragbaren Datenträgern wie Chipkarten bieten viele Manipula- tions- und/oder Analyseanreize, da sie zunehmend in sicherheitskritischen Bereichen wie Zutrittskontrolle, als wieder- aufladbare Geldkarte oder zur Erzeugung elektronischer Unter- Schriften eingesetzt werden.Integrated circuits, in particular those for use in portable data carriers such as chip cards, offer many manipulation and / or analysis incentives, since they are increasingly being used in security-critical areas such as access control, as a rechargeable money card or for generating electronic signatures.

Die für die Sicherheit der genannten Anwendungen maßgeblichen Elemente sind zumeist speziell konfigurierte Schaltungsteile oder in nicht-flüchtigen Speichern abgelegte geheime Informa- tionen. Um ein Ausspähen dieser Details zu verhindern wurde in der Vergangenheit vorgeschlagen, Schaltungsteile in tieferen Ebenen der integrierten Schaltung zu realisieren, so daß durch darüberliegende Strukturen verdeckt sind. Andere Vorschläge zielten auf eine zusätzliche vorzugsweise leitende Abdeckung der integrierten Schaltung, die in die Stromversorgung einbezogen ist und deren Vorhandensein bzw. Unversehrtheit detektiert werden kann, um den Verarbeitungsablauf in der integrierten Schaltung entsprechend zu beeinflussen. Dar- überhinaus ist auch schon eine Verschlüsselung des Datenaus- tauschs zwischen Bestandteilen einer Schaltung auf einem einzigen Halbleiterchip vorgeschlagen worden.The elements that are decisive for the security of the applications mentioned are mostly specially configured circuit parts or secret information stored in non-volatile memories. In order to prevent these details from being spied on, it has been proposed in the past to implement circuit parts in lower levels of the integrated circuit, so that they are covered by structures above them. Other proposals aimed for an additional, preferably conductive, cover of the integrated circuit, which is included in the power supply and whose presence or intactness can be detected in order to influence the processing sequence in the integrated circuit accordingly. In addition, encryption of the data exchange between components of a circuit on a single semiconductor chip has also been proposed.

All diese Schutzmaßnahmen greifen jedoch nicht in ausreichendem Maße bei einer seit einiger Zeit bekanntgewordenen Analy- semethode, die sich auf die Beobachtung und statistische Auswertung des von außen meßbaren Strukturprofils bei bestimmungsgemäßem Gebrauch beschränkt, ohne also den Halbleiterchip zu verändern. Diese Methode ist unter der englischen Bezeichnung Differential Power Analysis bekannt geworden und eine kurze Beschreibung dieser Methode ist beispielsweise in der Internet-Seite http : //www. cryptography. com veröffentlicht. Danach hat es sich gezeigt, daß bei gleichen Abläufen inner¬ halb der integrierten Schaltung - beispielsweise bei Ausfüh¬ rung des gleichen Befehls in einem Mikroprozessor - das glei- ehe Stromprofil an der Versorgungsspannungseingangsklemme meßbar ist. Durch statistische Auswertung dieses Stromprofils können sogar einzelne Bits einer für eine Verschlüsselung erforderlichen geheimen Zahl ermittelt werden.However, all of these protective measures do not work to a sufficient degree in an analytical method that has become known for some time and is limited to the observation and statistical evaluation of the structure profile that can be measured from the outside when used as intended, without thus changing the semiconductor chip. This method is known under the English name Differential Power Analysis and a brief description of this method can be found, for example, on the Internet site http: // www. cryptography. com released. Thereafter, it has been shown that intra with the same procedures ¬ half of the integrated circuit - for example, in exporting ¬ tion of the same instruction in a microprocessor - the same before current profile at the supply voltage input terminal is measured. Statistical evaluation of this current profile even enables individual bits of a secret number required for encryption to be determined.

Die Aufgabe vorliegender Erfindung ist es, einen Schutz vor einer solchen Analyse zu bieten.The object of the present invention is to offer protection against such an analysis.

Die Aufgabe wird durch eine auf einem Halbleiterchip integrierte Schaltung mit dem Merkmal des Anspruchs 1 gelöst. Vorteilhafte Weiterbildungen sind in den Unteransprüchen angegeben.The object is achieved by a circuit integrated on a semiconductor chip with the feature of claim 1. Advantageous further developments are specified in the subclaims.

Die erfindungsgemäße integrierte Schaltung weist also einen Versorgungsspannungsregler auf, der prinzipiell die Spannung an einem Ladungsspeicher, insbesondere einem Pufferkondensator, stabilisieren soll. Der Ladungsspeicher kann aber auch bereits durch die Kapazität der integrierten Schaltung selbst gegeben sein. Dieser Spannungsregler arbeitet aber nicht konstant auf einem Arbeitspunkt sondern wird durch eine Steuer- einheit in seinen Regeleigenschaften verändert. Hierdurch werden die durch den Datenverarbeitungsteil der integrierten Schaltung erzeugten Stromprofilschwankungen durch die vom Spannungsregler stammenden Schwankungen überlagert, so daß das tatsächliche Stromprofil verschleiert wird und somit bei gleichen Verarbeitungsvorgängen innerhalb der integrierten Schaltung aufgrund der Änderungen der Parameter der Regelschaltung unterschiedliche Stromprofile resultieren und somit kein Zusammenhang zwischen Stromprofil und Verarbeitungsvorgang mit statistischen Methoden hergeleitet werden kann.The integrated circuit according to the invention thus has a supply voltage regulator which is principally intended to stabilize the voltage on a charge store, in particular a buffer capacitor. However, the charge storage can already be provided by the capacity of the integrated circuit itself. However, this voltage regulator does not work constantly on one operating point, but its control properties are changed by a control unit. As a result, the current profile fluctuations generated by the data processing part of the integrated circuit are superimposed by the fluctuations originating from the voltage regulator, so that the actual current profile is obscured and, with the same processing operations within the integrated circuit, different current profiles result due to the changes in the parameters of the control circuit and therefore no connection between Current profile and processing can be derived using statistical methods.

In einer Variante der Erfindung wird statt oder zusätzlich zu dem Spannungsregler die Kapazität des Ladungsspeichers geän- dert. Dies entspricht in seiner Auswirkung dem Ändern des Wi¬ derstands eines Längsregeltransistors bei einem Serienregler, da hierdurch die Zeitkonstante des durch diesen Längsregel- transistor und den Ladungsspeicher gebildeten Tiefpasses be- einflußt wird.In a variant of the invention, instead of or in addition to the voltage regulator, the capacity of the charge store is changed. different. This is equivalent in its effect to changing the Wi ¬ derstands a longitudinal control transistor in a series regulator, as this is the time constant of the low pass through this transistor Längsregel- formed and the charge storage is influ- enced.

Um eine erfolgreiche Beeinflussung des Stromprofils zu erzie¬ len müssen die Änderungen der Regler- bzw. Ladungsspeichereigenschaften zeitlich und hinsichtlich der Auswirkung auf die Amplitude des Stromprofils im Bereich der typischen Werte der durch schaltungsinterne Vorgänge hervorgerufenen Änderungen liegen.Need to have a successful manipulation of the current profile len to erzie ¬ the changes to the controller or charge storage properties in time and in terms of impact are the caused by in-circuit processes changes to the amplitude of the current profile in the area of typical values.

Besonders vorteilhaft wirkt sich eine Änderung der internen Versorgungsspannung zu niedrigeren Werten hin aus, die in diesem Fall auch langsamer sein kann, da dann bei besonders sicherheitskritischen Vorgängen die Energie allein aus dem Ladungsspeicher bezogen werden kann, ohne daß dies im Ladestrom zu einer Profilierung führen würde. Eine Nachladung des Ladungsspeichers kann bei nicht-sicherheitskritischen Vorgängen erfolgen.A change in the internal supply voltage towards lower values has a particularly advantageous effect, which in this case can also be slower, since then in particularly safety-critical processes the energy can be obtained solely from the charge store without this leading to profiling in the charge current . The charge store can be recharged during non-safety-critical processes.

Die Erfindung wird nachfolgend anhand eines Ausführungsbeispiels mit Hilfe einer Figur näher erläutert.The invention is explained in more detail below using an exemplary embodiment with the aid of a figure.

Die Figur zeigt eine integrierte Schaltung gemäß der Erfindung, die ein Teil einer auf einem Halbleiterchip realisierten Schaltung ist. Der nicht zur Erfindung gehörende Teil der gesamten integrierten Schaltung, die durch die interne Ver- sorgungsspannung VDDint versorgt wird ist durch eine gepunktete Fortsetzung der Versorgungsspannungsleitung dargestellt.The figure shows an integrated circuit according to the invention, which is part of a circuit realized on a semiconductor chip. The part of the entire integrated circuit which is not part of the invention and which is supplied by the internal supply voltage V DD int is represented by a dotted continuation of the supply voltage line.

Zwischen der Klemme, an die die externe Versorgungsspannung VDDext angelegt wird und dem einen Anschluß eines als Puffer- kondensator 2 ausgebildeten Ladungsspeichers ist im gewählten Ausführungsbeispiel der Längsregeltransistor 4 eines Serienspannungsreglers 3 geschaltet. Dieser wird von einem Regel- Verstärker 7 angesteuert. Die beiden Eingänge des Regelver¬ stärkers 7 sind einerseits mit einer Referenzspannung Uref und andererseits mit dem Mittelabgriff eines als Ist- Spannungsmeßeinrichtung fungierenden Spannungsteilers 5, 6 verbunden. Der Spannungsteiler 5, 6 ist parallel zum Pufferkondensator 2 geschaltet. Durch diese Schaltung soll zunächst erreicht werden, daß die interne Versorgungsspannung VDDint auf einem durch die Referenzspannung Uref definierten Wert gehalten wird.In the selected exemplary embodiment, the series regulating transistor 4 of a series voltage regulator 3 is connected between the terminal to which the external supply voltage V DD ext is applied and the one connection of a charge store designed as a buffer capacitor 2. This is regulated by a Amplifier 7 driven. The two inputs of Regelver ¬ stärkers 7 are on the one hand connected to a reference voltage Uref and on the other hand, to the center tap of a voltage measuring means which functions as the actual voltage divider 5,. 6 The voltage divider 5, 6 is connected in parallel to the buffer capacitor 2. This circuit is initially intended to ensure that the internal supply voltage V DD int is kept at a value defined by the reference voltage Uref.

In erfindungsgemäßer Weise sind nun sowohl der als Stellglied des Spannungsreglers fungierende Längsregeltansistor 4, die Widerstände des Spannungsteiler 5, 6, der Pufferkondensator 2 und auch die Referenzsspannung Uref änderbar ausgebildet, was durch Pfeile angedeutet ist, und können von einer Steuerschaltung 1 angesteuert werden. Die Änderbarkeit kann zum Beispiel durch Parallelschaltung zusätzlicher entsprechender Bauteile erreicht werden. Dabei genügt es prinzipiell, wenn nur eines der genannten Elemente änderbar ausgebildet ist be- ziehungsweise angesteuert wird. Um aber im Sinne der zu lösenden Aufgabe eine Verschleierung des tatsächlichen Stromprofils an der Eingangsklemme (VDDext) zu erreichen, ist es von Vorteil, wenn mehrere Möglichkeiten vorhanden sind, die abwechselnd oder auch zusammen eingesetzt werden können.In the manner according to the invention, both the series regulating transistor 4 acting as an actuator of the voltage regulator, the resistors of the voltage divider 5, 6, the buffer capacitor 2 and also the reference voltage Uref can be changed, which is indicated by arrows, and can be controlled by a control circuit 1. The changeability can be achieved, for example, by connecting additional corresponding components in parallel. In principle, it is sufficient if only one of the elements mentioned is designed to be changeable or is controlled. However, in order to obscure the actual current profile at the input terminal (V DD ext) in the sense of the task to be solved, it is advantageous if there are several possibilities which can be used alternately or together.

Die durch die Steuereinheit 1 gesteuerten Änderungen können dabei langsam sein, um zum Beispiel für bestimmte Operationen durch Verändern der Referenzspannung Uref oder des Spannungsteilers 5, 6 die interne Versorgungsspannung VDDint abzusen- ken, so daß die Versorgung des (nicht dargestellten) Datenverarbeitungsteils der integrierten Schaltung allein aus dem Pufferkondensator 2 erfolgen kann. Dies ist bei sicherheitskritischen Datenverarbeitungsvorgängen wie beispielsweise Verschlüsselung von Interesse, da dann kein spezifisches Stromprofil an den Eingangsklemmen detektierbar ist. Andererseits können auch schnelle, zufällige Veränderungen, die sich im Pegel- und Frequenzbereich der typischen Stromprofilschwankungen bewegen sinnvoll sein, um auf diese Weise der Überlagerung der tatsächlichen Schwankungen mit den auf- gezwungenen eine Verschleierung zu erreichen, die eine statistische Auswertung erschwert oder gar verunmöglicht .The changes controlled by the control unit 1 can be slow, for example in order to lower the internal supply voltage V DD int for certain operations by changing the reference voltage Uref or the voltage divider 5, 6, so that the supply of the data processing part (not shown) of the integrated circuit can be done only from the buffer capacitor 2. This is of interest in security-critical data processing operations such as encryption, since then no specific current profile can be detected at the input terminals. On the other hand, rapid, random changes, which are in the level and frequency range of the typical current profile fluctuations, can also be useful in order to achieve a superimposition of the actual fluctuations with the imposed ones, which makes statistical evaluation more difficult or even impossible.

Ein besonderer Vorteil der erfindungsgemäßen integrierten Schaltung besteht darin, daß die Stromverschleierung nicht auf Kosten eines zusätzlichen Leistungsverbrauchs geht. A particular advantage of the integrated circuit according to the invention is that the current concealment is not at the expense of additional power consumption.

Claims

Patentansprüche claims 1. Auf einem Halbleiterchip integrierte Schaltung mit einer Steuereinheit (1), mit einem internen Ladungsspeicher (2) , an dem die interne VersorgungsSpannung (VDDint) der integrierten Schaltung abgreifbar ist, mit einer externen Versorgungsspannungsklemme zur Versorgung der integrierten Schaltung mit einer externen Versorgungs- Spannung (VDDext) , mit einem zwischen der externen Versorgungsspannungsklemme und dem Ladungsspeicher (2) angeordneten Spannungsregler (3), wobei der Spannungsregler (3) und/oder der Ladungsspeicher (2) mit der Steuereinheit (1) derart verbunden ist, daß Be- triebsparameter des Spannungsreglers (3) und/oder des Ladungsspeichers (2) durch ein Steuersignal der Steuereinheit (1) änderbar ist bzw. sind.1. On a semiconductor chip integrated circuit with a control unit (1), with an internal charge store (2), on which the internal supply voltage (V DD int) of the integrated circuit can be tapped, with an external supply voltage terminal for supplying the integrated circuit with an external Supply voltage (V DD ext), with a voltage regulator (3) arranged between the external supply voltage terminal and the charge store (2), the voltage regulator (3) and / or the charge store (2) being connected to the control unit (1) in this way that the operating parameters of the voltage regulator (3) and / or the charge store (2) can be changed by a control signal from the control unit (1). 2. Integrierte Schaltung nach Anspruch 1, dadurch gekenn- zeichnet, daß das Stellglied (4) des Spannungsreglers (3) durch das Steuersignal ansteuerbar ist.2. Integrated circuit according to claim 1, characterized in that the actuator (4) of the voltage regulator (3) can be controlled by the control signal. 3. Integrierte Schaltung nach Anspruch 1 oder 2, dadurch gekennzeichnet, daß die Meßeinrichtung (5, 6) des Spannungsreg- lers (3) durch das Steuersignal ansteuerbar ist.3. Integrated circuit according to claim 1 or 2, characterized in that the measuring device (5, 6) of the voltage regulator (3) can be controlled by the control signal. 4. Integrierte Schaltung nach einem der Ansprüche 1 bis 3, dadurch gekennzeichnet, daß der Sollwert (Uref) des Spannungsreglers (3) durch das Steuersignal ansteuerbar ist.4. Integrated circuit according to one of claims 1 to 3, characterized in that the setpoint (Uref) of the voltage regulator (3) can be controlled by the control signal. 5. Integrierte Schaltung nach einem der Ansprüche 1 bis 4, dadurch gekennzeichnet, daß das Steuersignal ein Zufallssignal ist. 5. Integrated circuit according to one of claims 1 to 4, characterized in that the control signal is a random signal.
PCT/EP2000/003429 1999-04-15 2000-04-14 Integrated circuit with a controllable voltage regulator Ceased WO2000063827A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP99107578.9 1999-04-15
EP99107578 1999-04-15

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Publication Number Publication Date
WO2000063827A1 true WO2000063827A1 (en) 2000-10-26

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002047025A1 (en) * 2000-12-06 2002-06-13 Infineon Technoloigies Ag Voltage regulator circuit for chipcard ics
WO2004095366A1 (en) * 2003-04-22 2004-11-04 Koninklijke Philips Electronics N.V. Electronic circuit device for cryptographic applications
RU2251740C2 (en) * 2000-11-06 2005-05-10 Инфинеон Текнолоджиз Аг Method for controlling phases of charge and discharge of support capacitor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0568398A2 (en) * 1992-05-01 1993-11-03 Gec-Avery Limited Data system and reader unit for reading an inductively powered token
US5479172A (en) * 1994-02-10 1995-12-26 Racom Systems, Inc. Power supply and power enable circuit for an RF/ID transponder

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0568398A2 (en) * 1992-05-01 1993-11-03 Gec-Avery Limited Data system and reader unit for reading an inductively powered token
US5479172A (en) * 1994-02-10 1995-12-26 Racom Systems, Inc. Power supply and power enable circuit for an RF/ID transponder

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2251740C2 (en) * 2000-11-06 2005-05-10 Инфинеон Текнолоджиз Аг Method for controlling phases of charge and discharge of support capacitor
WO2002047025A1 (en) * 2000-12-06 2002-06-13 Infineon Technoloigies Ag Voltage regulator circuit for chipcard ics
WO2004095366A1 (en) * 2003-04-22 2004-11-04 Koninklijke Philips Electronics N.V. Electronic circuit device for cryptographic applications
CN100378756C (en) * 2003-04-22 2008-04-02 Nxp股份有限公司 Electronic circuit devices for cryptographic applications
US8209765B2 (en) 2003-04-22 2012-06-26 Nxp B.V. Electronic circuit device for cryptographic applications

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