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WO1999034029A1 - Cible de pulverisation a corps magnetique - Google Patents

Cible de pulverisation a corps magnetique Download PDF

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Publication number
WO1999034029A1
WO1999034029A1 PCT/JP1998/005898 JP9805898W WO9934029A1 WO 1999034029 A1 WO1999034029 A1 WO 1999034029A1 JP 9805898 W JP9805898 W JP 9805898W WO 9934029 A1 WO9934029 A1 WO 9934029A1
Authority
WO
WIPO (PCT)
Prior art keywords
target
magnetic
sputtering
erosion
groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP1998/005898
Other languages
English (en)
Japanese (ja)
Inventor
Yuichiro Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eneos Corp
Original Assignee
Japan Energy Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Energy Corp filed Critical Japan Energy Corp
Publication of WO1999034029A1 publication Critical patent/WO1999034029A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering

Definitions

  • the present invention relates to a magnetic sputtering target for magnetron sputtering, and more particularly to a ferromagnetic sputtering target with improved use efficiency.
  • a sputtering method As a method of forming a semiconductor thin film, a sputtering method is widely used.
  • a substrate serving as an anode is opposed to a target serving as a cathode, and a high voltage is applied between the substrate and the target in an inert gas atmosphere to generate an electric field.
  • the ionized electrons collide with the inert gas, plasma is formed.
  • Positive ions in the plasma collide with the target surface and strike out target constituent atoms, and the ejected atoms strike the opposing substrate surface. This is based on the principle that a film is formed by adhesion.
  • magnetron sputtering is a method in which a magnet is set on the back side of a target and a magnetic field is generated on the target surface in a direction perpendicular to the electric field to perform sputtering. In such an orthogonal electromagnetic field space, plasma is generated. It has the features of being able to stabilize and increase the density and to increase the sputtering rate.
  • the thickness of the evening gate is limited by the sputtering equipment.
  • the magnetic material used in the sputtering method has a restriction that the thickness of the target must be reduced compared to other sputtering methods due to the magnetic properties of the target. If it is locally consumed more strongly, that part determines the target life, and there is a problem that the use efficiency is remarkably inferior to that of the non-magnetic target.
  • GT gall-type target in which a plurality of grooves are formed diagonally on a magnetic target used for magnetron sputtering
  • This GT target was originally configured such that the backing plate was exposed at the depth of the groove of the target. However, as sputtering proceeded, ions generated in the plasma penetrated to the depth of the groove and the backing plate was exposed. Is sputtered and contaminates the magnetic thin film formed on the substrate.In this publication, a small amount of magnetic material is left behind the groove to prevent the backing plate from being exposed to ions in the plasma. is there.
  • the erosion proceeds and disperses in the direction of the plurality of grooves formed in the target in the first place, in addition to the complexity of the processing step of forming a plurality of diagonal grooves around the target. Therefore, it is not intended to prevent only the erosion portion in a specific region of the magnetic target from becoming steep, that is, to prevent local wear. No.
  • An object of the present invention is to suppress local wear with a simple structure when magnetron sputtering is performed on a magnetic material target, and to improve the use efficiency of the target.
  • the present inventors have conducted intensive studies and found that by providing parallel grooves in advance on both sides of the most eroded area of the magnetic target, local wear was achieved. It was found that it is possible to control the target and improve the use efficiency of the target. The present invention is based on this finding,
  • At least one groove parallel to the most eroded area is provided on both sides of the most eroded area when magnetron sputtering is performed.
  • a magnetic sputtering target characterized by dividing the most eroded area into a plurality of areas when there is no groove so that erosion proceeds
  • FIG. 1 is a schematic view showing a state before sputtering and after erosion b in a cross section of a target of the present invention.
  • FIG. 2 is a schematic view showing a state before a sputtering and a state after an erosion b in a conventional evening get cross section.
  • the present invention can be applied to a magnetic sputtering target for forming a magnetic thin film such as a semiconductor, a magnetic head, and a hard disk. It is particularly effective when applied to a ferromagnetic or ferrimagnetic target.
  • the ferromagnetic material examples include simple metals of Fe, Co, and Ni or alloys thereof, and rare earth metals such as Gd, Tb, Dy, Ho, Er, and Tm. These compounds and alloys also exhibit ferromagnetism. Furthermore, some are non-ferromagnetic metals by themselves, but exhibit ferromagnetism when alloyed. Typical examples are Cu 2 MnA l (Heusler alloy), MnA l, and Mn B i. It is. Typical examples of the ferrimagnetic material include oxide ganets called ferrite such as magnetite. The present invention can be applied to all of these magnetic materials.
  • the present invention can be used for the magnetic target as described above, but is particularly suitable for a ferromagnetic target having a saturation magnetic flux density of 100 G or more and a maximum magnetic permeability of more than 10.
  • a ferromagnetic target having a saturation magnetic flux density of 100 G or more and a maximum magnetic permeability of more than 10 local flux concentration is particularly likely to occur, so that the use efficiency of the present invention is more significantly improved. .
  • At least one or more parallel relatively shallow grooves may be provided on both sides of the region where the erosion is most likely to occur in the target where there is no groove, so that the processing is not so difficult.
  • Providing two or more grooves on each side has the effect of dispersing the erosion portion only.
  • the number of grooves should be an appropriate number in consideration of processing cost and material yield.
  • the width of the groove itself is 3 to 30 mm and the depth of the groove is 1 to 20 mm. Further, the interval between the grooves is preferably set to 10 to 100 mm.
  • FIG. 1 schematically shows a comparison between a state before sputtering and a state after erosion b in the evening gate cross section of the present invention.
  • FIG. 2 schematically shows a comparison between a state before sputtering and a state after erosion b in a conventional target cross section.
  • the deepest portion of the erosion region is divided into a plurality of portions in the direction of the groove 1 formed in the target, whereby the erosion portion 2 is dispersed and eroded accordingly.
  • the depth of the groove of the portion becomes shallower. As a result, the life of the target is prolonged, and the use efficiency of the entire target is improved.
  • a Co—15% Cr target with a diameter of 76.2 cm and a thickness of 5 mm saturated magnetic flux density of about 700 G, maximum magnetic permeability of 25 was prepared as a ferromagnetic target.
  • Two grooves were formed on both sides of the region where the target was most likely to be eroded, with a width of 5 mm, a depth of 1 mm, and a distance between grooves of 10 mm.
  • This target was mounted on a patter apparatus, and a magnetron sputtering film formation test was performed.
  • the sputtering conditions of the target are as follows.
  • Argon pressure 0.5 Pa
  • discharge power 200 W.
  • the target life was defined as the time required for the deepest part of the erosion to reach the backing plate, and the utilization rate of the evening get was calculated from the weight loss of the target. As a result, the target life was 28.0 hours, and the target utilization was 20.5%.
  • This evening gate is a conventional target, that is, one without a groove.
  • a magnetron sputtering test was performed under the same conditions as in the example.
  • the time required for the deepest part of the erosion to reach the backing plate was taken as the target life, and the utilization rate of the evening get was determined from the weight reduction of the target.
  • the target life was 22.5 hours, and the target utilization rate was 16.4%.
  • the magnetic sputtering target of the present invention can suppress the local consumption of the magnetron sputtering compared to a conventional target, prolong the life of the target, and improve the use efficiency of the target. .

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Thin Magnetic Films (AREA)

Abstract

Cible de pulvérisation au magnétron à corps magnétique, en particulier cible à corps ferromagnétique, qui possède une efficacité d'utilisation améliorée et une longue durée de vie. La cible est conçue sous forme de plaque. Des deux côtés de la région la plus susceptible d'être érodée lorsque la pulvérisation au magnétron est effectuée, une ou plusieurs rainures sont formées parallèlement à ladite région, et cette région est divisée en parties si bien que l'érosion progresse parallèlement aux rainures.
PCT/JP1998/005898 1997-12-26 1998-12-25 Cible de pulverisation a corps magnetique Ceased WO1999034029A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP9/366644 1997-12-26
JP36664497A JPH11193457A (ja) 1997-12-26 1997-12-26 磁性体スパッタリングターゲット

Publications (1)

Publication Number Publication Date
WO1999034029A1 true WO1999034029A1 (fr) 1999-07-08

Family

ID=18487294

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP1998/005898 Ceased WO1999034029A1 (fr) 1997-12-26 1998-12-25 Cible de pulverisation a corps magnetique

Country Status (2)

Country Link
JP (1) JPH11193457A (fr)
WO (1) WO1999034029A1 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE602005021535D1 (de) * 2004-11-17 2010-07-08 Nippon Mining Co Trägerplattenanordnung für sputtertargets und filmabscheidungssystem
CN1811009B (zh) 2005-01-28 2011-12-14 松下电器产业株式会社 利用pvd法的成膜方法以及利用于pvd法的成膜用靶
US7488526B2 (en) 2005-11-22 2009-02-10 Ricoh Company, Ltd. Sputtering target and manufacturing method therefor, and optical recording medium and manufacturing method therefor
US8398833B2 (en) 2008-04-21 2013-03-19 Honeywell International Inc. Use of DC magnetron sputtering systems
JP6498527B2 (ja) * 2015-05-21 2019-04-10 Ｊｘ金属株式会社 スパッタリングターゲット
JP6291122B1 (ja) * 2017-03-29 2018-03-14 住友化学株式会社 スパッタリングターゲット
US11244815B2 (en) 2017-04-20 2022-02-08 Honeywell International Inc. Profiled sputtering target and method of making the same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57118619A (en) * 1981-01-16 1982-07-23 Ulvac Corp High speed sputtering device for ferromagnetic material
JPS57145984A (en) * 1981-03-06 1982-09-09 Ulvac Corp High-speed dc sputtering device of ferromagnetic matter
JPS5891168A (ja) * 1982-11-01 1983-05-31 Toshiba Corp マグネトロン型スパッタ装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57118619A (en) * 1981-01-16 1982-07-23 Ulvac Corp High speed sputtering device for ferromagnetic material
JPS57145984A (en) * 1981-03-06 1982-09-09 Ulvac Corp High-speed dc sputtering device of ferromagnetic matter
JPS5891168A (ja) * 1982-11-01 1983-05-31 Toshiba Corp マグネトロン型スパッタ装置

Also Published As

Publication number Publication date
JPH11193457A (ja) 1999-07-21

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