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WO1999031712A1 - Appareil et procede d'implantation ionique - Google Patents

Appareil et procede d'implantation ionique Download PDF

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Publication number
WO1999031712A1
WO1999031712A1 PCT/GB1998/003776 GB9803776W WO9931712A1 WO 1999031712 A1 WO1999031712 A1 WO 1999031712A1 GB 9803776 W GB9803776 W GB 9803776W WO 9931712 A1 WO9931712 A1 WO 9931712A1
Authority
WO
WIPO (PCT)
Prior art keywords
target chamber
ion
phosphorus
evacuating
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/GB1998/003776
Other languages
English (en)
Inventor
Hiroshi Asechi
Hideki Ishigaki
Yasuhiko Matsunaga
Takahito Uehara
Yasuhiro Hori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CROSS RUPERT EDWARD BLOUNT
Applied Materials Inc
Original Assignee
CROSS RUPERT EDWARD BLOUNT
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CROSS RUPERT EDWARD BLOUNT, Applied Materials Inc filed Critical CROSS RUPERT EDWARD BLOUNT
Publication of WO1999031712A1 publication Critical patent/WO1999031712A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube

Definitions

  • An ion i planti ng apparatus or ion implanter basically comprises a beam line section for generating ions and selecting a desired ion species to yield an ion beam, and an ion implantation section for irradiating a silicon wafer with the ion beam from the beam line section and carrying out ion implantation.
  • ion implanter When an ion implantation process is carried out in thus configured ion implanter, its ions are implanted not only into the wafer but also into a beam stop disposed in the target chamber after passing through the space between the wafer and the target.
  • the ions are also implanted into part of the wafer support wheel such as tip portions of arms and inner wall faces of the target chamber in particular.
  • the ions thus implanted into the parts other than the wafer may cause so-called cross contamination. For example, there is a case where, after carrying out several cycles of phosphorus implantation process, the same ion implanter is used for an arsenic ion implantation process.
  • Another aspect of the present invention is directed to an ion implanting apparatus comprising abeam line section for forming and emitting an ion beam, a target chamber in which a substrate is disposed and ion implantation to said substrate is effected by said ion beam emitted therein from said beam line section, first evacuating means for evacuating said beam line section, second evacuating means for evacuating said target chamber, and oxygen gas supply means for supplying an oxygen gas into said target chamber.
  • Fig. 4 is a graph showing results of experiments of the cleaning method in accordance with the present invention carried out with various cleaning times, in which influences on the subsequent arsenic implantation process are indicated in terms of sheet resistance and its shifting ratio.
  • the ion supply system 18 is adapted to produce a high-density plasma state by discharging a doping gas fed from a gas supply (not shown).
  • the ion beam extracting/pre-accelerating system 20 extracts and accelerates ions constituting the plasma, thereby forming an ion beam IB.
  • the mass analyzing system 22 includes an analyzing magnet (not shown) disposed therein, and is adapted to extract only a desired ion species from the ion beam IB by adjusting the strength of magnetic field.
  • the ion beam IB passed through the mass analyzing system 22 is further accelerated by the post-accelerating system 24, so as to be adjusted to a speed suitable for ion implantation.
  • the ion implantation sectio n 14 comprises a box-type target chamber 30 and a wafer support wheel 32 disposed within the target chamber 30.
  • the wafer loader section 16 is disposed close to the target chamber 30.
  • the housing 54 of the wafer loader section 16 and the target chamber 30 are communicated with each other via a transportation path 56.
  • an isolation valve 58 is inserted, so as to make the housing 54 and the target chamber 30 separable from each other. Therefore, the wafer loader section 16 can be made open to the atmosphere alone, whereby the operator can place a cassette (not shown) accommodating therein a plurality of wafers W into the housing 54.
  • the wafers W in the cassette can be transported by a robot (not shown), such as to be mounted to the respective wafer holders 52 of the wafer support wheel 32 within the target chamber 30.
  • the ion implanter 10 in accordance with the present invention further comprises an oxygen gas supply 60.
  • the oxygen gas supply 60 communicates with the inside of the target chamber 30 via a pipe 62.
  • the position at which the pipe 62 is connected to the target chamber 30, i.e., the position of the oxygen gas inlet 64 can be defined as appropriate, it is preferably located in the vicinity of the irradiation path of the ion beam IB.
  • dummy wafers are transported from another cassette disposed within the housing 54 into the target chamber 30, so as to be mounted to all the wafer holders 52 of the wafer support wheel 32, respectively. Then, the isolation valve 58 is closed. During these operations, the target chamber 30 is not open to the atmosphere and keeps a vacuum therein.
  • the ion implantation process subsequent to the cleaning process is an arsenic implantation process in the above-mentioned embodiment, this process may implant impurities other than arsenic.
  • the phosphorus implantation process may be continued.
  • the cleaning process in accordance with the present invention can overcome, for example, such problems as shifting sheet resistance.
  • argon, antimony, and the like are suitable as the ion species of ion beams.
  • antimony and argon are naturally implanted into the inner wall faces of the target chamber and the like, cross contamination of these elements are not considered to effect the current semiconductor manufacturing process adversely.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

Cette invention concerne un procédé permettant de nettoyer soigneusement l'intérieur de la chambre à vide d'un implanteur d'ions qui a été contaminée lors d'un opération d'implantation d'ions de phosphore. Dans ce cas, ledit procédé prévoit d'envoyer de l'oxygène gazeux dans la chambre sans ouvrir celle-ci. En réagissant avec l'oxygène, le phosphore produit un oxyde de phosphore hautement volatil qui est évacué au moyen d'une pompe à vide branchée sur l'implanteur d'ions. Pendant cette mise à vide de la chambre, il est préférable de ne laisser fonctionner que les turbopompes de l'émetteur de faisceaux, en fermant les soupapes des cryopompes reliées à la chambre. On empêche ainsi une réaction entre l'hydrogène susceptible d'avoir déjà été adsorbé par les cryopompes et l'oxygène injecté.
PCT/GB1998/003776 1997-12-16 1998-12-16 Appareil et procede d'implantation ionique Ceased WO1999031712A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP34656797A JP4088362B2 (ja) 1997-12-16 1997-12-16 イオン注入装置のクリーニング方法
JP9/346567 1997-12-16

Publications (1)

Publication Number Publication Date
WO1999031712A1 true WO1999031712A1 (fr) 1999-06-24

Family

ID=18384306

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/GB1998/003776 Ceased WO1999031712A1 (fr) 1997-12-16 1998-12-16 Appareil et procede d'implantation ionique

Country Status (2)

Country Link
JP (1) JP4088362B2 (fr)
WO (1) WO1999031712A1 (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007059052A3 (fr) * 2005-11-14 2007-08-02 Axcelis Tech Inc Systemes et procedes attenuant la contamination et modifiant les caracteristiques de surface au cours de procedes d'implantation ionique a travers l'introduction de gaz
US10699876B2 (en) 2015-10-28 2020-06-30 Advanced Ion Beam Technology, Inc. Method of cleaning electrostatic chuck
CN113066711A (zh) * 2021-03-19 2021-07-02 长江存储科技有限责任公司 一种磷污染物的去除方法及装置
CN113388893A (zh) * 2021-06-11 2021-09-14 广州粤芯半导体技术有限公司 一种石英反应腔的维护方法
US20220397322A1 (en) * 2021-06-15 2022-12-15 Applied Materials, Inc. Cryogenic Cooling System

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0658586U (ja) * 1993-01-14 1994-08-12 日電アネルバ株式会社 高周波電力伝達装置
KR100691100B1 (ko) * 2005-12-29 2007-03-12 동부일렉트로닉스 주식회사 부산물 생성을 방지할 수 있는 이온 주입 방법
JP5672297B2 (ja) * 2012-06-22 2015-02-18 日新イオン機器株式会社 イオンビーム照射装置およびイオンビーム照射装置の運転方法
US10361081B2 (en) * 2016-11-24 2019-07-23 Axcelis Technologies, Inc. Phosphine co-gas for carbon implants
US11562885B2 (en) * 2020-07-28 2023-01-24 Applied Materials, Inc. Particle yield via beam-line pressure control

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0474108A1 (fr) * 1990-08-31 1992-03-11 Kabushiki Kaisha Toshiba Dispositif d'implantation d'ions et procédé pour la nettoyer
EP0762469A1 (fr) * 1995-08-28 1997-03-12 Eaton Corporation Méthode et appareil pour l'enlèvement in situ de contaminants d'appareils neutralisateurs de faisceaux d'ions et implanteurs

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4512812A (en) * 1983-09-22 1985-04-23 Varian Associates, Inc. Method for reducing phosphorous contamination in a vacuum processing chamber
US5554854A (en) * 1995-07-17 1996-09-10 Eaton Corporation In situ removal of contaminants from the interior surfaces of an ion beam implanter
GB2325561B (en) * 1997-05-20 2001-10-17 Applied Materials Inc Apparatus for and methods of implanting desired chemical species in semiconductor substrates

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0474108A1 (fr) * 1990-08-31 1992-03-11 Kabushiki Kaisha Toshiba Dispositif d'implantation d'ions et procédé pour la nettoyer
EP0762469A1 (fr) * 1995-08-28 1997-03-12 Eaton Corporation Méthode et appareil pour l'enlèvement in situ de contaminants d'appareils neutralisateurs de faisceaux d'ions et implanteurs

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7511287B2 (en) 2005-09-21 2009-03-31 Axcelis Technologies, Inc. Systems and methods that mitigate contamination and modify surface characteristics during ion implantation processes through the introduction of gases
WO2007059052A3 (fr) * 2005-11-14 2007-08-02 Axcelis Tech Inc Systemes et procedes attenuant la contamination et modifiant les caracteristiques de surface au cours de procedes d'implantation ionique a travers l'introduction de gaz
US10699876B2 (en) 2015-10-28 2020-06-30 Advanced Ion Beam Technology, Inc. Method of cleaning electrostatic chuck
CN113066711A (zh) * 2021-03-19 2021-07-02 长江存储科技有限责任公司 一种磷污染物的去除方法及装置
CN113388893A (zh) * 2021-06-11 2021-09-14 广州粤芯半导体技术有限公司 一种石英反应腔的维护方法
US20220397322A1 (en) * 2021-06-15 2022-12-15 Applied Materials, Inc. Cryogenic Cooling System

Also Published As

Publication number Publication date
JP4088362B2 (ja) 2008-05-21
JPH11186185A (ja) 1999-07-09

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