[go: up one dir, main page]

WO1999031291A3 - Plasmaborierung - Google Patents

Plasmaborierung Download PDF

Info

Publication number
WO1999031291A3
WO1999031291A3 PCT/EP1998/008079 EP9808079W WO9931291A3 WO 1999031291 A3 WO1999031291 A3 WO 1999031291A3 EP 9808079 W EP9808079 W EP 9808079W WO 9931291 A3 WO9931291 A3 WO 9931291A3
Authority
WO
WIPO (PCT)
Prior art keywords
reactor
plasma
boron
components
medium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP1998/008079
Other languages
English (en)
French (fr)
Other versions
WO1999031291A2 (de
Inventor
Cabeo Emilio Rodriguez
Guenther Laudien
Kyong-Tschong Rie
Swen Biemer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Volkswagen AG
Original Assignee
Volkswagen AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Volkswagen AG filed Critical Volkswagen AG
Priority to EP98965249A priority Critical patent/EP1044289B1/de
Priority to KR1020007006436A priority patent/KR100583262B1/ko
Priority to AT98965249T priority patent/ATE215132T1/de
Priority to JP2000539186A priority patent/JP4588213B2/ja
Priority to DE59803574T priority patent/DE59803574D1/de
Publication of WO1999031291A2 publication Critical patent/WO1999031291A2/de
Publication of WO1999031291A3 publication Critical patent/WO1999031291A3/de
Priority to US09/594,905 priority patent/US6783794B1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/36—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
    • C23C8/38—Treatment of ferrous surfaces
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/36—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Primary Cells (AREA)
  • Apparatus For Radiation Diagnosis (AREA)
  • Plasma Technology (AREA)

Abstract

Die vorliegende Erfindung betrifft ein Verfahren zur Erzeugung einer Boridschicht auf einer Oberfläche durch Plasmaborieren, bei dem man einem Reaktor (10) ein ein Borspendermedium enthaltendes Gasmedium zuführt und in dem Reaktor (10) eine Glimmentladung erzeugt sowie eine Vorrichtung, die insbesondere zur Durchführung des genannten Verfahrens geeignet ist. Mit dem Verfahren wird porenfreien Boridschicten gelangt, wenn man die Parameter der Erzeugung des in einem Behandlungsraum des Reaktors (10) erzeugten Plasmas so wählt, daß man einen erhöhten Anteil an angeregten Borpartikeln im Plasma erhält. Des erfindungsgemässe Verfahren eignet sich z.B. zur Beschichtung von Bauteilen, die eine Oberfläche mit hoher Verschleissfestigkeit aufweisen müssen, da sie einer erhöhten Beanspruchung ausgesetzt sind, z.B. Zahnräder und Nockenwellen und dergleichen. Verfahrensparameter, die die bildung der Boridschicht beeinflussen kann, sind z.B. Spannung, Tastverhältnis, Frequenz, Temperatur, Druck sowie der Gehalt des Borspendermediums und der übrigen Komponenten in dem dem Reaktor zugeführten Gasmedium.
PCT/EP1998/008079 1997-12-15 1998-12-11 Plasmaborierung Ceased WO1999031291A2 (de)

Priority Applications (6)

Application Number Priority Date Filing Date Title
EP98965249A EP1044289B1 (de) 1997-12-15 1998-12-11 Plasmaborierung
KR1020007006436A KR100583262B1 (ko) 1997-12-15 1998-12-11 플라즈마 붕화 처리 방법 및 장치
AT98965249T ATE215132T1 (de) 1997-12-15 1998-12-11 Plasmaborierung
JP2000539186A JP4588213B2 (ja) 1997-12-15 1998-12-11 プラズマ硼化処理
DE59803574T DE59803574D1 (de) 1997-12-15 1998-12-11 Plasmaborierung
US09/594,905 US6783794B1 (en) 1997-12-15 2000-06-15 Method and arrangement for plasma boronizing

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19755595 1997-12-15
DE19755595.0 1997-12-15

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US09/594,905 Continuation US6783794B1 (en) 1997-12-15 2000-06-15 Method and arrangement for plasma boronizing

Publications (2)

Publication Number Publication Date
WO1999031291A2 WO1999031291A2 (de) 1999-06-24
WO1999031291A3 true WO1999031291A3 (de) 1999-09-10

Family

ID=7851902

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP1998/008079 Ceased WO1999031291A2 (de) 1997-12-15 1998-12-11 Plasmaborierung

Country Status (8)

Country Link
US (1) US6783794B1 (de)
EP (2) EP1044289B1 (de)
JP (1) JP4588213B2 (de)
KR (1) KR100583262B1 (de)
CN (1) CN1198953C (de)
AT (1) ATE215132T1 (de)
DE (1) DE59803574D1 (de)
WO (1) WO1999031291A2 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE524493C2 (sv) * 2002-02-25 2004-08-17 Telia Ab Uppskattningsenhet och metod för att bestämma positionen för en mobil station i ett mobilt kommunikationssystem
EP1938672A4 (de) * 2005-09-22 2010-05-19 Skaffco Engineering & Mfg Inc Plasma-borierungsverfahren
CA2649525A1 (en) * 2006-04-20 2007-11-01 Habib Skaff Mechanical parts having increased wear resistance
WO2008116159A2 (en) * 2007-03-22 2008-09-25 Skaff Corporation Of America, Inc. Mechanical parts having increased wear-resistance
US8338317B2 (en) * 2011-04-06 2012-12-25 Infineon Technologies Ag Method for processing a semiconductor wafer or die, and particle deposition device
CN104233425B (zh) * 2014-09-29 2017-01-25 河海大学常州校区 微弧渗硼催化溶液和微弧渗硼溶液以及微弧渗硼方法
US10388524B2 (en) * 2016-12-15 2019-08-20 Tokyo Electron Limited Film forming method, boron film, and film forming apparatus

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3677799A (en) * 1970-11-10 1972-07-18 Celanese Corp Vapor phase boron deposition by pulse discharge
US4406765A (en) * 1980-01-28 1983-09-27 Fuji Photo Film Co., Ltd. Apparatus and process for production of amorphous semiconductor
DE3322341C2 (de) * 1983-06-22 1991-03-21 Siegfried Dr.-Ing. 5135 Selfkant De Straemke
DE4003623A1 (de) * 1990-02-07 1991-08-08 Kloeckner Ionon Verfahren zur steuerung einer anlage zur plasmabehandlung von werkstuecken
EP0603864A2 (de) * 1992-12-23 1994-06-29 Hughes Aircraft Company Reglung des Oberflächenpotentials bei der Plasma-Bearbeitung von Werkstoffen
FR2708624A1 (fr) * 1993-07-30 1995-02-10 Neuville Stephane Procédé de dépôt d'un revêtement protecteur à base de pseudo carbone diamant amorphe ou de carbure de silicium modifié.
EP0695813A2 (de) * 1994-08-06 1996-02-07 ALD Vacuum Technologies GmbH Verfahren zum Aufkohlen von Bauteilen aus kohlungsfähigen Werkstoffen mittels einer impulsförmig betriebenen Plasma-entladung
WO1997027345A1 (de) * 1996-01-25 1997-07-31 Elektroschmelzwerk Kempten Gmbh Verfahren zur herstellung von verschleissfesten boridschichten auf metallischen werkstoffoberflächen

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5118944A (ja) * 1974-08-07 1976-02-14 Suwa Seikosha Kk Kisohokaho
DE3908200C1 (de) * 1989-03-14 1989-09-07 Degussa Ag, 6000 Frankfurt, De
US5286534A (en) * 1991-12-23 1994-02-15 Minnesota Mining And Manufacturing Company Process for plasma deposition of a carbon rich coating
US5354381A (en) * 1993-05-07 1994-10-11 Varian Associates, Inc. Plasma immersion ion implantation (PI3) apparatus
JPH07286254A (ja) * 1994-04-21 1995-10-31 Sumitomo Metal Ind Ltd 耐二次加工脆性に優れた鋼板およびその製造方法
JP3050361B2 (ja) * 1994-07-19 2000-06-12 株式会社ライムズ 金属部材のイオン窒化方法
US5578725A (en) 1995-01-30 1996-11-26 Regents Of The University Of Minnesota Delta opioid receptor antagonists
JPH0982495A (ja) * 1995-09-18 1997-03-28 Toshiba Corp プラズマ生成装置およびプラズマ生成方法
US6306225B1 (en) * 1996-01-25 2001-10-23 Bor Tec Gmbh Process for producing wear-resistant boride layers on metallic material surfaces
DE19629877C1 (de) * 1996-07-24 1997-03-27 Schott Glaswerke CVD-Verfahren und Vorrichtung zur Innenbeschichtung von Hohlkörpern
US5654043A (en) * 1996-10-10 1997-08-05 Eaton Corporation Pulsed plate plasma implantation system and method
US6101971A (en) * 1998-05-13 2000-08-15 Axcelis Technologies, Inc. Ion implantation control using charge collection, optical emission spectroscopy and mass analysis
US20040016402A1 (en) * 2002-07-26 2004-01-29 Walther Steven R. Methods and apparatus for monitoring plasma parameters in plasma doping systems

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3677799A (en) * 1970-11-10 1972-07-18 Celanese Corp Vapor phase boron deposition by pulse discharge
US4406765A (en) * 1980-01-28 1983-09-27 Fuji Photo Film Co., Ltd. Apparatus and process for production of amorphous semiconductor
DE3322341C2 (de) * 1983-06-22 1991-03-21 Siegfried Dr.-Ing. 5135 Selfkant De Straemke
DE4003623A1 (de) * 1990-02-07 1991-08-08 Kloeckner Ionon Verfahren zur steuerung einer anlage zur plasmabehandlung von werkstuecken
EP0603864A2 (de) * 1992-12-23 1994-06-29 Hughes Aircraft Company Reglung des Oberflächenpotentials bei der Plasma-Bearbeitung von Werkstoffen
FR2708624A1 (fr) * 1993-07-30 1995-02-10 Neuville Stephane Procédé de dépôt d'un revêtement protecteur à base de pseudo carbone diamant amorphe ou de carbure de silicium modifié.
EP0695813A2 (de) * 1994-08-06 1996-02-07 ALD Vacuum Technologies GmbH Verfahren zum Aufkohlen von Bauteilen aus kohlungsfähigen Werkstoffen mittels einer impulsförmig betriebenen Plasma-entladung
WO1997027345A1 (de) * 1996-01-25 1997-07-31 Elektroschmelzwerk Kempten Gmbh Verfahren zur herstellung von verschleissfesten boridschichten auf metallischen werkstoffoberflächen

Also Published As

Publication number Publication date
EP1044289A2 (de) 2000-10-18
EP1044289B1 (de) 2002-03-27
JP2002508448A (ja) 2002-03-19
WO1999031291A2 (de) 1999-06-24
JP4588213B2 (ja) 2010-11-24
KR100583262B1 (ko) 2006-05-25
EP1143031A2 (de) 2001-10-10
DE59803574D1 (de) 2002-05-02
CN1198953C (zh) 2005-04-27
CN1282383A (zh) 2001-01-31
KR20010033075A (ko) 2001-04-25
EP1143031A3 (de) 2004-04-28
US6783794B1 (en) 2004-08-31
ATE215132T1 (de) 2002-04-15

Similar Documents

Publication Publication Date Title
GB0212848D0 (en) Introduction of liquid/solid slurry into an exciting medium
WO2004098259A3 (de) Plasmabehandlung zur reinigung von kupfer oder nickel
WO2005043623A3 (de) Verfahren zum ausbilden eines dielektrikums auf einer kupferhaltigen metallisierung und kondensatoranordnung
US7799420B2 (en) Method for producing a nonostructured functional coating and a coating that can be produced according to said method
US6338881B1 (en) Diamond-like coating and method of making same
EP0336979A4 (en) Method and apparatus for thin film formation by plasma cvd
Zambrano et al. Optical emission spectroscopy study of rf magnetron sputtering discharge used for multilayers thin film deposition
AU5589699A (en) Capacitors comprising roughened platinum layers, methods of forming roughened layers of platinum and methods of forming capacitors
WO1999031291A3 (de) Plasmaborierung
ATE278817T1 (de) Verfahren und vorrichtung zur plasmabeschichtung von oberflächen
EP2247767A1 (de) Mit amorphem hydriertem kohlenstoff beschichtetes substrat
EP1071123A8 (de) Verfahren zur herstellung einer schicht
ES2140496T3 (es) Sustrato de metal duro con una capa de diamante de alta adherencia.
US20090304949A1 (en) Short pulse atmospheric pressure glow discharge method and apparatus
WO2001038596A3 (de) Plasmabeschichtung von metallen bei atmosphärendruck
JP2009062206A (ja) 水素化アモルファスカーボン膜
GB2437235A (en) Method and apparatus for producing a coating of substrate
Bardos et al. Differences between microwave and RF activation of nitrogen for the PECVD process
TW325562B (en) Surface modification of magnetic heads
US5900289A (en) Method of producing a colorating coating
ES2140569T3 (es) Procedimiento pvd para la deposicion de capas de material duro de varios componentes.
WO2002045147A3 (en) Method for pretreating dielectric layers to enhance the adhesion of cvd metal layers thereto
AU2002367908A1 (en) A method for modifying a metallic surface
TW343393B (en) Electron emissive film
Mitu et al. Carbon material deposition by remote RF plasma beam

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 98812183.2

Country of ref document: CN

AK Designated states

Kind code of ref document: A2

Designated state(s): CN JP KR US

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE

DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
121 Ep: the epo has been informed by wipo that ep was designated in this application
AK Designated states

Kind code of ref document: A3

Designated state(s): CN JP KR US

AL Designated countries for regional patents

Kind code of ref document: A3

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE

WWE Wipo information: entry into national phase

Ref document number: 1998965249

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 1020007006436

Country of ref document: KR

WWE Wipo information: entry into national phase

Ref document number: 09594905

Country of ref document: US

WWP Wipo information: published in national office

Ref document number: 1998965249

Country of ref document: EP

WWP Wipo information: published in national office

Ref document number: 1020007006436

Country of ref document: KR

WWG Wipo information: grant in national office

Ref document number: 1998965249

Country of ref document: EP

WWG Wipo information: grant in national office

Ref document number: 1020007006436

Country of ref document: KR