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WO1999014787A3 - Verfahren zur erzeugung eines plasmas durch einstrahlung von mikrowellen - Google Patents

Verfahren zur erzeugung eines plasmas durch einstrahlung von mikrowellen Download PDF

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Publication number
WO1999014787A3
WO1999014787A3 PCT/DE1998/002727 DE9802727W WO9914787A3 WO 1999014787 A3 WO1999014787 A3 WO 1999014787A3 DE 9802727 W DE9802727 W DE 9802727W WO 9914787 A3 WO9914787 A3 WO 9914787A3
Authority
WO
WIPO (PCT)
Prior art keywords
microwave irradiation
producing plasma
microwave
plasma
output
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/DE1998/002727
Other languages
English (en)
French (fr)
Other versions
WO1999014787A2 (de
Inventor
Thomas Weber
Johannes Voigt
Susanne Lucas
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Priority to EP98955327A priority Critical patent/EP1032943A2/de
Priority to JP2000512232A priority patent/JP2001516947A/ja
Publication of WO1999014787A2 publication Critical patent/WO1999014787A2/de
Publication of WO1999014787A3 publication Critical patent/WO1999014787A3/de
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32266—Means for controlling power transmitted to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)

Abstract

Die Erfindung betrifft ein Verfahren zur Erzeugung eines Plasmas durch Einstrahlung von Mikrowellen, wobei ein Prozessgas in einen Rezipienten geleitet und mittels Einstrahlung von Mikrowellen ein Plasma gezündet wird. Erfindungsgemäß ist vorgesehen, daß die eingekoppelte Mikrowellenstrahlung gepulst wird. Dadurch ist eine Reduktion der effektiven Mikrowellenleistung bei gleichem Prozeßresultat möglich, so daß auf diese Weise die Prozeßtemperatur herabgesetzt werden kann. Ferner ist eine Erhöhung der Prozeßrate bei effektiv gleicher eingekoppelter Leistung möglich, wodurch die Prozeßzeit reduziert und das Verfahren auf große Chargenmengen hochskaliert werden kann.
PCT/DE1998/002727 1997-09-17 1998-09-15 Verfahren zur erzeugung eines plasmas durch einstrahlung von mikrowellen Ceased WO1999014787A2 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP98955327A EP1032943A2 (de) 1997-09-17 1998-09-15 Verfahren zur erzeugung eines plasmas durch einstrahlung von mikrowellen
JP2000512232A JP2001516947A (ja) 1997-09-17 1998-09-15 マイクロ波の入射によりプラズマを発生させる方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19740792.7 1997-09-17
DE19740792A DE19740792A1 (de) 1997-09-17 1997-09-17 Verfahren zur Erzeugung eines Plasmas durch Einstrahlung von Mikrowellen

Publications (2)

Publication Number Publication Date
WO1999014787A2 WO1999014787A2 (de) 1999-03-25
WO1999014787A3 true WO1999014787A3 (de) 1999-05-06

Family

ID=7842575

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE1998/002727 Ceased WO1999014787A2 (de) 1997-09-17 1998-09-15 Verfahren zur erzeugung eines plasmas durch einstrahlung von mikrowellen

Country Status (5)

Country Link
US (1) US20030012890A1 (de)
EP (1) EP1032943A2 (de)
JP (1) JP2001516947A (de)
DE (1) DE19740792A1 (de)
WO (1) WO1999014787A2 (de)

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Publication number Priority date Publication date Assignee Title
DE19911046B4 (de) * 1999-03-12 2006-10-26 Robert Bosch Gmbh Plasmaverfahren
KR100721656B1 (ko) * 2005-11-01 2007-05-23 주식회사 엘지화학 유기 전기 소자
US7560175B2 (en) * 1999-12-31 2009-07-14 Lg Chem, Ltd. Electroluminescent devices with low work function anode
KR100377321B1 (ko) * 1999-12-31 2003-03-26 주식회사 엘지화학 피-형 반도체 성질을 갖는 유기 화합물을 포함하는 전기소자
DE10000663C2 (de) * 2000-01-11 2003-08-21 Schott Glas Verfahren zum Beschichten eines Substrats
DE10202311B4 (de) * 2002-01-23 2007-01-04 Schott Ag Vorrichtung und Verfahren zur Plasmabehandlung von dielektrischen Körpern
FR2871812B1 (fr) * 2004-06-16 2008-09-05 Ion Beam Services Sa Implanteur ionique fonctionnant en mode plasma pulse
KR100718765B1 (ko) * 2004-08-19 2007-05-15 주식회사 엘지화학 버퍼층을 포함하는 유기 발광 소자 및 이의 제작 방법
KR100890862B1 (ko) * 2005-11-07 2009-03-27 주식회사 엘지화학 유기 발광 소자 및 이의 제조 방법
EP1974590B1 (de) * 2006-01-18 2020-03-04 LG Display Co., Ltd. Oled mit gestapelten organischen lichtemittierenden einheiten
EP1918967B1 (de) 2006-11-02 2013-12-25 Dow Corning Corporation Verfahren zur Herstellung einer Schicht durch Abscheidung aus einem Plasma
DE102007021386A1 (de) * 2007-05-04 2008-11-06 Christof-Herbert Diener Kurztaktniederdruckplasmaanlage
JP5120924B2 (ja) * 2007-05-25 2013-01-16 トヨタ自動車株式会社 アモルファスカーボン膜の製造方法
US20090091242A1 (en) * 2007-10-05 2009-04-09 Liang-Sheng Liao Hole-injecting layer in oleds
JP5710606B2 (ja) 2009-06-26 2015-04-30 東京エレクトロン株式会社 アモルファスカーボンのドーピングによるフルオロカーボン（ＣＦｘ）の接合の改善
DE102010035593B4 (de) * 2010-08-27 2014-07-10 Hq-Dielectrics Gmbh Verfahren und Vorrichtung zum Behandeln eines Substrats mittels eines Plasmas
DE102011100057A1 (de) * 2011-04-29 2012-10-31 Centrotherm Thermal Solutions Gmbh & Co. Kg Vorrichtung und verfahren zum behandeln von substraten mit einem plasma
TWI500066B (zh) * 2011-07-27 2015-09-11 Hitachi High Tech Corp Plasma processing device
JP6107731B2 (ja) * 2014-03-31 2017-04-05 ブラザー工業株式会社 成膜装置
JP6102816B2 (ja) * 2014-03-31 2017-03-29 ブラザー工業株式会社 成膜装置、成膜方法及び成膜プログラム

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62171990A (ja) * 1986-01-24 1987-07-28 Hitachi Ltd 結晶薄膜の製造方法
JPS6355929A (ja) * 1986-08-26 1988-03-10 Sumitomo Electric Ind Ltd 半導体薄膜の製造方法
JPH01149965A (ja) * 1987-12-07 1989-06-13 Hitachi Ltd プラズマ反応装置
US4891118A (en) * 1987-11-25 1990-01-02 Fuji Electric Co., Ltd. Plasma processing apparatus
JPH03261136A (ja) * 1990-03-12 1991-11-21 Hitachi Ltd マイクロ波発生装置及びプラズマ処理装置
US5217748A (en) * 1991-11-25 1993-06-08 Development Products, Inc. Method of hardening metal surfaces
JPH05194091A (ja) * 1992-01-24 1993-08-03 Idemitsu Petrochem Co Ltd ダイヤモンドの製造方法
JPH06139978A (ja) * 1992-10-29 1994-05-20 Japan Steel Works Ltd:The パルス駆動型の電子サイクロトロン共振イオン源
US5378284A (en) * 1990-04-03 1995-01-03 Leybold Aktiengesellschaft Apparatus for coating substrates using a microwave ECR plasma source
US5395453A (en) * 1993-07-29 1995-03-07 Fujitsu Limited Apparatus and method for controlling oscillation output of magnetron
US5514603A (en) * 1993-05-07 1996-05-07 Sony Corporation Manufacturing method for diamond semiconductor device

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* Cited by examiner, † Cited by third party
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KR900008505B1 (ko) * 1987-02-24 1990-11-24 세미콘덕터 에너지 라보라터리 캄파니 리미티드 탄소 석출을 위한 마이크로파 강화 cvd 방법
KR930011413B1 (ko) * 1990-09-25 1993-12-06 가부시키가이샤 한도오따이 에네루기 겐큐쇼 펄스형 전자파를 사용한 플라즈마 cvd 법
JPH04144992A (ja) * 1990-10-01 1992-05-19 Idemitsu Petrochem Co Ltd マイクロ波プラズマ発生装置およびそれを利用するダイヤモンド膜の製造方法
US5427827A (en) * 1991-03-29 1995-06-27 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Deposition of diamond-like films by ECR microwave plasma
DE19513614C1 (de) * 1995-04-10 1996-10-02 Fraunhofer Ges Forschung Verfahren zur Abscheidung von Kohlenstoffschichten, Kohlenstoffschichten auf Substraten und deren Verwendung
DE19538903A1 (de) * 1995-10-19 1997-04-24 Rossendorf Forschzent Verfahren zur Implantation von Ionen in leitende bzw. halbleitende Werkstücke mittels Plasmaimmersionsionenimplantation (P III) und Implantationskammer zur Durchführung des Verfahrens
DE19634795C2 (de) * 1996-08-29 1999-11-04 Schott Glas Plasma-CVD-Anlage mit einem Array von Mikrowellen-Plasmaelektroden und Plasma-CVD-Verfahren

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62171990A (ja) * 1986-01-24 1987-07-28 Hitachi Ltd 結晶薄膜の製造方法
JPS6355929A (ja) * 1986-08-26 1988-03-10 Sumitomo Electric Ind Ltd 半導体薄膜の製造方法
US4891118A (en) * 1987-11-25 1990-01-02 Fuji Electric Co., Ltd. Plasma processing apparatus
JPH01149965A (ja) * 1987-12-07 1989-06-13 Hitachi Ltd プラズマ反応装置
JPH03261136A (ja) * 1990-03-12 1991-11-21 Hitachi Ltd マイクロ波発生装置及びプラズマ処理装置
US5378284A (en) * 1990-04-03 1995-01-03 Leybold Aktiengesellschaft Apparatus for coating substrates using a microwave ECR plasma source
US5217748A (en) * 1991-11-25 1993-06-08 Development Products, Inc. Method of hardening metal surfaces
JPH05194091A (ja) * 1992-01-24 1993-08-03 Idemitsu Petrochem Co Ltd ダイヤモンドの製造方法
JPH06139978A (ja) * 1992-10-29 1994-05-20 Japan Steel Works Ltd:The パルス駆動型の電子サイクロトロン共振イオン源
US5514603A (en) * 1993-05-07 1996-05-07 Sony Corporation Manufacturing method for diamond semiconductor device
US5395453A (en) * 1993-07-29 1995-03-07 Fujitsu Limited Apparatus and method for controlling oscillation output of magnetron

Non-Patent Citations (6)

* Cited by examiner, † Cited by third party
Title
DATABASE WPI Section Ch Week 9335, Derwent World Patents Index; Class L03, AN 93-278138, XP002094754 *
PATENT ABSTRACTS OF JAPAN vol. 012, no. 015 (C - 469) 16 January 1988 (1988-01-16) *
PATENT ABSTRACTS OF JAPAN vol. 012, no. 277 (E - 640) 30 July 1988 (1988-07-30) *
PATENT ABSTRACTS OF JAPAN vol. 013, no. 414 (C - 635) 13 September 1989 (1989-09-13) *
PATENT ABSTRACTS OF JAPAN vol. 016, no. 067 (E - 1168) 19 February 1992 (1992-02-19) *
PATENT ABSTRACTS OF JAPAN vol. 018, no. 434 (E - 1592) 12 August 1994 (1994-08-12) *

Also Published As

Publication number Publication date
WO1999014787A2 (de) 1999-03-25
US20030012890A1 (en) 2003-01-16
EP1032943A2 (de) 2000-09-06
DE19740792A1 (de) 1999-04-01
JP2001516947A (ja) 2001-10-02

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