[go: up one dir, main page]

WO1999005707A1 - Procede de mise au point, procede d'exposition et regleur - Google Patents

Procede de mise au point, procede d'exposition et regleur Download PDF

Info

Publication number
WO1999005707A1
WO1999005707A1 PCT/JP1998/003259 JP9803259W WO9905707A1 WO 1999005707 A1 WO1999005707 A1 WO 1999005707A1 JP 9803259 W JP9803259 W JP 9803259W WO 9905707 A1 WO9905707 A1 WO 9905707A1
Authority
WO
WIPO (PCT)
Prior art keywords
focus
sensitive substrate
optical system
mask
exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP1998/003259
Other languages
English (en)
Japanese (ja)
Inventor
Masayuki Murayama
Yuji Imai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Priority to AU83556/98A priority Critical patent/AU8355698A/en
Publication of WO1999005707A1 publication Critical patent/WO1999005707A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography

Definitions

  • a circuit pattern formed on a photomask or a reticle (hereinafter, collectively referred to as a “reticle” as appropriate) is converted into a silicon wafer or glass having a surface coated with a photosensitive agent such as a photo resist.
  • the substrate is exposed by projecting it onto a sensitive substrate such as a plate (hereinafter referred to as “wafer” or “substrate”) using a projection optical system.
  • a projection lens system having a large numerical aperture N.A.
  • a mechanism to match the image plane on the substrate side is indispensable.
  • a focus mechanism is provided. The focus mechanism is located within each exposure area.
  • a repelling mechanism to make the wafer surface perpendicular to the optical axis of the projection lens system.
  • a repelling mechanism to make the wafer surface perpendicular to the optical axis of the projection lens system.
  • an oblique incident light type gain focusing mechanism using an optical system different from the projection lens of the projection exposure apparatus is known.
  • the light emitted from a light source such as an erogen lamp passes through a slit, and then a slit image is projected onto the wafer surface from obliquely above.
  • the projected image is vibrated by a vibrating mirror and detected by a detector via a light receiving slit.
  • the position of the slit image moves left and right on the light receiving slit according to the top and bottom of the wafer surface. For this reason, if the wafer position (target position) when the slit image accurately overlaps the light receiving slit is set in advance so as to be a true focal point, the detection signal is raised and lowered while moving the wafer position up and down.
  • a target position of a wafer for setting a true focal point in this autofocus mechanism is disclosed in, for example, Japanese Patent Application Laid-Open Nos. 1-187178 and 2-30112.
  • the projection lens system can change its image plane due to various factors such as changes in the surrounding environment such as temperature and absorption of a single laser beam for exposure.
  • the target position once set as described above ie, the wafer position where the gain signal becomes zero level
  • the target position is actually Deviates from the best imaging plane of the projection lens system. Therefore, it is necessary to verify in some time whether or not the talent focus signal indicates the true focus, and if necessary, the focus indicated by the talent focus mechanism becomes the true focus.
  • the detector in the focus mechanism must be adjusted. In other words, it was necessary to reset or calibrate the detection signal level at the true focal point (hereinafter referred to as the target focus level) by adding an offset to the detection signal of the detector.
  • an exposure apparatus equipped with this multipoint focus position detection system when exposing a plurality of shot areas partitioned in a wafer, three or more measurement points are set in each shot, and the measurement points are measured. By measuring the position of the point in the optical axis direction, the local inclination in the shot can be obtained, and the imaging plane can be adjusted to the optimum plane for each shot.
  • a multipoint focal position detection system of the oblique incident light system it is necessary to verify and calibrate the true focal point as in the conventional focal position detection system at one point.
  • the exposure area in the shot (the area on the wafer that is illuminated with the exposure light, the area illuminated by the reticle and the projection lens system) (A region on the wafer conjugate with respect to), and these measurement points are illuminated via different optical paths of the projection lens system during exposure. Therefore, if the refractive index distribution of the projection lens system is different due to environmental changes or absorption of exposure light, for example, if the projection lens system has a curvature of field or an inclination of the field, measurement will be performed. Focus must be verified and calibrated for each point.
  • the present invention has been made under such circumstances, and an object thereof is to provide a method of measuring a true focus position for each of a plurality of focus measurement points existing in an exposure area on a substrate. It is in.
  • a further object of the present invention is to measure a true focus position for each of a plurality of focus measurement points existing in the exposure area plane on the substrate, and use the measurement results to determine the position and inclination of the substrate in the optical axis direction. It is an object of the present invention to provide an exposure method capable of exposing a substrate in a state in which the temperature is adjusted.
  • a plurality of measurement points are determined in a projection area on the sensitive substrate on which the pattern of the mask is projected, and a focus measurement pattern is formed at a position on the mask corresponding to the plurality of measurement points.
  • a Mask In the first step, the sensitive substrates are respectively exposed while changing the positions of the sensitive substrates in the optical axis direction of the projection optical system to various positions.
  • the best imaging position by the projection optical system is determined for each measurement point from the exposure results of the sensitive substrate at the various optical axis positions.
  • a focus measurement mask having a focus measurement pattern formed at a position on the mask corresponding to the plurality of measurement points is used.
  • the focus measurement pattern is exposed on all the measurement points in the exposure area.
  • the obtained exposure patterns are also obtained at various positions along the optical axis.
  • the best imaging position is obtained for each measurement point.
  • the best imaging position usually differs for each measurement point. This reflects the imaging characteristics of the projection optical system, such as curvature of field and tilt of the field.
  • the in-focus position can be accurately determined not only for the position passing through the optical axis of the projection optical system but also for the light beam passing around or outside the position. Therefore, the present invention is suitable for use in focusing a certain area in a substrate, and is particularly effective for focusing a projection optical system having a large numerical aperture, that is, a small depth of focus.
  • each measurement point on the sensitive substrate is irradiated with light using light from a projection system different from the projection optical system, and the position of each measurement point in the optical axis direction is determined from the reflected light.
  • the position in the optical axis direction can be calibrated by the best imaging position.
  • a predetermined pattern formed on a mask is projected onto a projection optical system.
  • a plurality of measurement points are defined in a projection area on the sensitive substrate on which the pattern of the mask is projected, and a focus measurement mask having a focus measurement pattern formed at a position on the mask corresponding to the plurality of measurement points Using;
  • An exposure method wherein the sensitive substrate is positioned with respect to the projection optical system based on the obtained best imaging position, and exposure is performed using a mask on which the predetermined pattern is formed.
  • the exposure method of the present invention is characterized in that preliminary exposure is performed using a focus measurement mask on which a plurality of focus measurement patterns are formed.
  • the plurality of focus measurement patterns formed on the mask correspond to the plurality of measurement points defined in the exposure area (projection area) of the sensitive substrate.
  • each measurement point on the sensitive substrate can be irradiated with light using light from a projection system different from the projection optical system. That is, at the time of actual exposure, the focus position is detected by using a projection system different from the projection optical system, for example, an oblique incident light type multi-point autofocus sensor. Can calibrate the target position of the substrate detected by the sensor using the best focus position (true focus position) obtained by the preliminary exposure. Therefore, the exposure ⁇
  • a signal indicating the target position of the substrate indicated by the sensor that is, The scum level can be adjusted.
  • the method of the present invention is directed to a scanning exposure method, that is, when exposing the mask on which the predetermined pattern is formed, irradiating the mask with slit-like illumination light while applying the mask and the sensitive substrate to a projection optical system.
  • This method is suitable for a method of exposing a sensitive substrate by moving the photosensitive substrate synchronously.
  • the projection area is an area conjugate with the illumination area formed on the mask and irradiated with the slit-like illumination light with respect to the projection optical system.
  • an exposure apparatus for exposing a projection area on a sensitive substrate by projecting a predetermined pattern formed on a mask onto the sensitive substrate by a projection optical system.
  • a substrate stage for moving the sensitive substrate in the direction of the optical axis of the projection optical system; and a projection system separate from the projection optical system, wherein light is respectively transmitted to a plurality of measurement points in a projection area on the sensitive substrate.
  • a focus detection system having a projection system for irradiating, and a focus detector for detecting the position of each measurement point in the optical axis direction by detecting light reflected from each measurement point on the sensitive substrate;
  • a control device for storing information on the best imaging position for each measurement point and controlling the exposure device
  • the exposure apparatus is characterized in that the control device controls the substrate stage based on the stored best imaging position and the value detected by the focus detector, and positions the sensitive substrate at the best imaging position. Is done.
  • the control device stores information on the best imaging position for each measurement point in the exposure area (projection area). This control device is The information on the position can be used to calibrate the target focus level of a focus detector, for example, an oblique incidence type multipoint gain focus sensor. If the detector has multiple detectors that detect the optical axis position at each measurement point, the target focus level can be calibrated for each detector. Therefore, it is compensated that the focus position obtained by the focus detection system is accurate.
  • the exposure apparatus further includes an image focus position measurement pattern provided on the substrate stage, an image of the pattern formed by a projection optical system illuminating the pattern, and projecting the image on the mask.
  • the apparatus may further include a focus position detection system that receives the reflected light via the projection optical system, for example, an aerial image focus position detection system. Since the best imaging position can be calibrated by this focal position detection system, it is not necessary to perform the pre-exposure every predetermined period.
  • a substrate stage for moving a projection optical system and a sensitive substrate in an optical axis direction of the projection optical system
  • a projection system that is different from the projection optical system and irradiates a plurality of measurement points in a projection area on a sensitive substrate with light, and detects light reflected from each measurement point on the sensitive substrate.
  • a focus detector having a focus detector for detecting the position of each measurement point in the optical axis direction;
  • FIG. 1 is a diagram schematically showing a configuration of a projection exposure apparatus according to an embodiment to which a focus position detection method according to the present invention is applied.
  • FIG. 2A is a plan view showing the pattern forming plate of FIG. 1
  • FIG. 2B is a diagram showing an arrangement of a pattern image formed on an exposure surface of the wafer
  • FIG. 2C is a drawing showing a light receiving slit plate. It is a figure which shows arrangement
  • Fig. 3 is a graph showing the relationship between the Z-axis position of each detection point for a plurality of detection points obtained as a result of the line width measurement on the horizontal axis and the pattern line width of the resist image on the vertical axis. It is.
  • FIG. 4 is an enlarged view of one curve shown in FIG. 3, and is a view for explaining a method of determining an optimum pattern line width.
  • BEST MODE FOR CARRYING OUT THE INVENTION hereinafter, an embodiment of the present invention will be described with reference to FIGS.
  • FIG. 1 shows a schematic configuration of a projection exposure apparatus 10 according to an embodiment to which a surface position detection method according to the present invention is applied.
  • the projection exposure apparatus 10 is a so-called step-and-repeat type reduction projection exposure apparatus.
  • the projection exposure apparatus 10 holds a wafer W as a substrate and XY stage device 14 equipped with a substrate table 18 as a sample stage that can move in two axes directions and perpendicular to the reference plane, and perpendicular to the reference plane, and in the Z axis direction, and perpendicular to the reference plane.
  • the projection optical system PL disposed above the XY stage device 14 with the Z-axis direction as the direction of the optical axis AX, and a mask disposed perpendicular to the optical axis AX above the projection optical system PL And a reticle holder 36 for holding a reticle R as a reticle.
  • the XY stage device 14 includes a base 11, a Y stage 16 that can reciprocate on the base 11 in the Y direction (left-right direction in FIG. 1) on the base 11, and a Y stage 16 on the Y stage 16. It has an X stage 12 that can reciprocate in an X direction (a direction perpendicular to the paper) perpendicular to the direction, and a substrate table 18 provided on the X stage 12. A wafer holder 25 is placed on the substrate table 18, and the wafer W is held by the wafer holder 25 by vacuum suction.
  • the reticle holder 36 has vacuum suction portions 34 at four corners on the upper surface thereof, and the reticle R is held on the reticle holder 36 via the vacuum suction portions 34.
  • the reticle holder 36 has an opening (not shown) corresponding to the pattern area PA where the circuit pattern on the reticle R is formed, and is driven in the X, Y, and ⁇ directions by a drive mechanism (not shown). (Rotational direction around the Z axis), so that the reticle R can be positioned so that the center (reticle center) of the pattern area PA passes through the optical axis AX of the projection optical system PL. It has a configuration.
  • the reticle R and the wafer W are aligned (aligned) by the main controller 44 based on a detection signal of an alignment detection system (not shown). Based on the detection signal of the detection system, the pattern surface of the reticle R and the surface of the wafer W are conjugate with respect to the projection optical system PL, and the focal plane (substrate-side image surface) of the projection optical system PL and the surface of the wafer W
  • the main controller 44 controls the driving of the substrate table 18 via the driving device 21 in the Z-axis direction and the tilt direction so that the surface position is adjusted.
  • the pattern area PA of the reticle R is substantially uniform by the exposure light EL emitted from the illumination optical system including the mirror 97 and the main condenser lens 99.
  • the illumination optical system includes a light source such as a mercury lamp, An elliptical mirror for condensing the exposure light emitted from the light source, an input lens for converting the collected exposure light into a substantially parallel light beam, and a light beam output from the input lens being incident upon the input lens.
  • fixed blinds 46 having fixed openings are arranged near the movable blinds 45A and 45B.
  • the fixed blind 46 is, for example, a field stop that surrounds a rectangular opening with four knife edges, and the rectangular opening defines an area that can be exposed by the projection optical system.
  • the movable blinds 45A and 45B are driven in the X and Z directions in the XZ plane by the movable blind drive mechanism 43A and 43B, thereby fixing the blinds.
  • the illumination area on reticle R specified in 6 is masked, and the illumination area is set to a rectangular shape of any shape (including size).
  • the exposure area on the conjugate wafer W is also set as a rectangular area of any shape (including size). That is, in the present embodiment, the movable blind 45 A, 4 A
  • the exposure area E f on the wafer W (see FIG. 2 (B)) is set by 5B.
  • the operation of drive mechanisms 43A and 43B is controlled by main controller 44 based on the reticle information.
  • main controller 44 based on the reticle information.
  • oblique incidence is performed to detect the position of the surface of the wafer W in the Z direction (optical axis AX direction).
  • One of the optical focus detection systems is a multi-point position detection system. Is provided.
  • This multipoint focus position detection system includes an irradiation optical system 40 including an optical fiber bundle 81, a condenser lens 82, a pattern forming plate 83, a lens 84, a mirror 85, and an irradiation objective lens 86, Condensing objective lens 87, rotating direction diaphragm 88, imaging lens 89, slit plate 93 for receiving light, and a number of photosensors as photodetectors (silicon type die or type transistor) Etc.) and a light receiving optical system 42 comprising a light receiver 90 having
  • an irradiation optical system 40 including an optical fiber bundle 81, a condenser lens 82, a pattern forming plate 83, a lens 84, a mirror 85, and an irradiation objective lens 86, Condensing objective lens 87, rotating direction diaphragm 88, imaging lens 89, slit plate 93 for receiving light, and a number of photosensors as photodetectors (silicon
  • Illumination light having a wavelength that does not expose the photoresist on the wafer W, which is different from the exposure light EL, is transmitted from an illumination light source (not shown) to an optical fiber bundle. Guided through 8 1.
  • the illumination light emitted from the optical fiber bundle 81 illuminates the pattern forming plate 83 via the condenser lens 82.
  • the illumination light transmitted through the pattern forming plate 83 is projected onto the exposure surface of the wafer W via the lens 84, the mirror 85 and the irradiation objective lens 86, and the exposure surface of the wafer W is projected onto the pattern forming plate 83. Is projected and imaged.
  • the illumination light (beam of the pattern image) reflected by the wafer W passes through the converging objective lens 87, the rotating diaphragm 88, and the imaging lens 89, and is received by the light receiver arranged in front of the receiver 90.
  • the image of the pattern on the pattern forming plate 83 is projected on the slit plate 93 for light reception, and is re-imaged on the slit plate 93 for light reception.
  • the main controller 44 has a built-in oscillator (OSC.), And the rotation direction diaphragm 88 is vibrated by the vibrating device 92 driven by the drive signal from the 0 SC.
  • the signal processing device 91 has a built-in synchronous detection circuit (PSD) to which an AC signal having the same phase as the drive signal from the OSC is input.
  • PSD synchronous detection circuit
  • the signal processing device 91 performs synchronous detection of each detection signal based on the phase of the AC signal described above, and outputs a large number of detection output signals, that is, a large number of focus position detection signals FS to the main control device 44. Output.
  • the pattern on the pattern forming plate 83 based on FIG. 2 the image of this pattern formed on the exposure surface of the wafer W, and the light receiving slit plate 93 on which this image is re-imaged will be further described. It will be described in detail.
  • FIG. 2A shows a pattern forming plate 83. As shown in FIG.
  • the reflected light flux of the image light flux from the surface of the wafer W travels in a direction inclined by a predetermined angle symmetrically to the image light flux from the irradiation optical system 40 with respect to the optical axis AX in the YZ plane to receive light.
  • the light is received by the system 42 as described above. That is, when viewed in a plan view, the image light flux and the reflected light flux from the irradiation optical system 40 travel from one side to the other along the Y axis. For this reason, as shown in FIG. 2B, a 3 ⁇ 3 matrix-like arrangement inclined by 45 ° with respect to the X-axis and the Y-axis is provided in the exposure area E f on the surface of the wafer W. 3.
  • FIG. 2C shows a slit plate 93 for receiving light.
  • the slits Q11 to Q33 are arranged in a matrix of 3 rows and 3 columns corresponding to the slit images S11 to S33.
  • Each slit D is arranged at an angle of 45 degrees to the X-axis and Y-axis, respectively.
  • Photosensors D11 to D33 are arranged behind the light receiving slit plate 93, respectively, and the slit images S11 to S33 re-formed on the slit plate 93 are formed. 33 light beams are photoelectrically detected by the photosensors D11 to D33 via the slits Q11 to Q33. Then, as described above, the light reflected on the exposure surface of the wafer W is rotationally vibrated by the rotational direction vibration plate 88, so that the position of each re-imaged image on the slit plate 93 is shown in FIG. Oscillates in the direction of arrow RD.
  • the focus state of the reference mark plate FM or the wafer W with respect to the projection optical system PL is directly checked in advance, and the level of the focus position detection signal FS at or near the true focus point is determined.
  • the offset of each photo sensor is adjusted (calibration of each photo sensor) so as to be a predetermined level (target level), and thereafter, each signal FS and each target are adjusted.
  • the difference from the focus level is recognized as the amount of displacement (defocus amount) in the optical axis direction from the best imaging plane position at each detection point, and based on this, the movement of the substrate table 18 in the Z direction and the tilt direction is determined. Control it . For example, zero (0) is used as the target focus level.
  • the main controller 44 sets the same focus level as the target focus level of all the photosensors D11 to D33 corresponding to the respective detection points of the multipoint focus position detection system (40, 42). Is set.
  • the exposure area (pattern projection area) E f on the wafer W A measurement reticle R1 as a measurement mask on which a focus position measurement pattern projected on each of the lith images S11 to S33, that is, all the detection point positions, is placed, and the reticle alignment is performed. Mention has been completed.
  • the pattern on the measurement reticle R1 is not particularly limited, but in this embodiment, any pattern may be used as long as the pattern is formed at the positions of the slit images S11 to S33.
  • the main controller 44 uses the multi-point focus position detection system (40, 42) to position it at five detection points, specifically, four corners in the exposure area E f Wafers at a total of five detection points: four detection points, which are the positions of the slit images S11, S13, S3K, S33, and the detection points, which are the position of the slit image S22, which is located at the center Measure the position of the W surface in the optical axis direction.
  • each detection point will be referred to with the same reference sign S11 to S33 as the reference sign of the slit image S corresponding to each detection point.
  • the main controller 44 calculates the average value of the detection results of the above five points in the Z-axis direction, and monitors each focus position detection signal from the multi-point focus position detection system (40, 42),
  • the drive device 21 and the Z-not-shown (not shown) are set so that the Z-axis coordinates of the five detection points S11, S13, S22, S3K 0 Drive control (feedback control) of the substrate table 18 via the drive mechanism.
  • the inclination of the exposure area E f on the wafer W is corrected.
  • the Z-axis position (1) described above may be detected at all (9 in this case) detection points S in the exposure area.
  • the first exposure area E f (hereinafter, referred to as “E f 1”)
  • the main controller 44 outputs the X stage 12 and the Y stage via the driving device 21. Driving both or one of 16 is performed to step the wafer W by a predetermined amount.
  • the above operations (1) to (3) are performed on the next second exposure area E f (hereinafter, referred to as “E f 2”).
  • the Z-axis position at the time of exposure is different from that of the exposure area E f 1 by a predetermined pitch ⁇ ii ia ( ⁇ _5 or later.
  • the above-mentioned stepping and the above-mentioned operations (1) to (3) are performed while changing the Z-axis position at the time of exposure in (3) above at a fixed pitch, so that the Z-axis position within a predetermined range is determined.
  • the operation of exposing the focus position measurement pattern on the measurement reticle R1 to the wafer W ends, in this case, it is assumed that the exposure has ended in the n-th exposure area E fn.
  • the wafer W that has been exposed is transferred to a developing device (not shown), Performed, registration of the respective detection point position of each exposure area E f 1 to E fn on the wafer W
  • a developing device not shown
  • the line width of the storage pattern for example, with a line width measuring device, the relationship between the Z-axis position and the pattern line width of the resist image at each of the detection points S11 to S33 is obtained.
  • FIG. 4 shows an arbitrary curve in FIG.
  • the pattern line width of the resist image is largest at the position where the Z-axis coordinate value is Za.
  • the Z-axis coordinate value of the point where the line width of the resist image becomes maximum is determined as the best image plane position.
  • the best imaging plane position Z, Z l2, 13, Z 21, Z 22, Z 23, ZL 32. rather suspended in Z 33, without calibrating the photosensors D. 11 to D 33 of the upper ⁇ d, certain reference position is first set Detected value of Z-axis position based on (target position) A measured value), in advance internal memory best image plane stored in the position Z u, Z ⁇ * ⁇ ⁇ ⁇ ⁇ ⁇ The difference between the Z 33, recognized as the amount of deviation from the focal position at the respective detection points, it is also possible to implement the focus position location control and Ueno ⁇ plane inclination correction control.
  • the focus position detection signal FS is a signal indicating an in-focus point indirectly, so that the position of the best image forming plane (focal point) of the projection optical system PL previously detected due to exposure light absorption or the like changes.
  • a difference occurs between the focal point at which the signal FS is at the target focus level and the actual focal point.
  • the focus position is periodically detected based on the exposure result using the measurement reticle R 1 described above. It is difficult to adopt it because of the labor involved. Therefore, as a next best measure, means capable of detecting a change in the focal position without actually performing exposure, for example, Japanese Patent Application Laid-Open No.
  • a light emitting mark is formed on a reference plate FM on a substrate table 18 (wafer stage) as disclosed in No. 2, 311 and the light emitting mark is illuminated from below with light having the same wavelength as the exposure light.
  • the light-emitting mark is projected onto the reticle pattern surface via the projection optical system PL, and the reflected light from the reticle pattern surface is projected onto the light-emitting mark on the reference plate FM via the projection optical system PL, and the substrate table 18
  • An internal light receiving sensor is used to detect each image at each detection point using a spatial image focal position detection system (TTL type focal position detection system) that photoelectrically detects the image projected on the light-emitting mark. Periodically detect the corresponding best image plane position.
  • TTL type focal position detection system that photoelectrically detects the image projected on the light-emitting mark.
  • the best imaging plane position at an arbitrary point (image height) of the projection optical system PL is changed in the Z direction on the substrate table 18, and the contrast of the image detected at that time is changed. Can be detected based on the data.
  • the disclosure of Japanese Patent Application Laid-Open No. 5-190423 and the corresponding US Patent No. 5,502,311 Incorporation of text Part of may include a sensitivity error, it is necessary to perform the ⁇ focus position detection based on the exposure result using the measurement reticle R 1 described above before the start of exposure.
  • the result is compared with the detection result of the aerial image focus position detection system at the X ⁇ coordinate position of each detection point, and if there is a difference between the two, it is used as a device constant and the internal memory in the main controller 44 To memorize it. After that, every time the aerial image focal position detection system detects the best imaging plane position at the XY coordinate position of each detection point, the actual best imaging plane position is calculated in consideration of the above device constant. It is desirable to readjust the offset of each photosensor D of the multipoint focus position detection system (40, 42) based on the value.
  • the multi-point focus detection system (40, 42) detects the true best imaging plane position Z at each detected point S and the optical axis direction position of each detected point S of the wafer W detected thereafter. Based on the photoelectric detection result, the displacement of the projection optical system PL from the best imaging plane position Z in the optical axis direction can be accurately determined for each detection point S. Can be detected.
  • the position and inclination of the wafer W in the optical axis direction are adjusted based on this detection result, it is possible to ensure that the projection area of the wafer W matches the focal depth of the best imaging plane of the projection optical system P. it can. Further, according to the present embodiment, it is needless to say that the influence of the displacement due to the backlash in the Z-axis direction due to the manufacturing accuracy of the stage and the like at the time of the focus position detection as in the prior art described above is of course eliminated. . Further, in the above embodiment, when detecting the best imaging plane position at each detection point by exposure using a measurement reticle, in the above-mentioned step (1), the multi-point imaging is performed.
  • the best imaging of the projection optical system is performed for each of the plurality of measurement points defined in the projection area of the projection optical system, that is, the exposure area on the substrate.
  • the surface can be measured accurately.
  • the output level of a multipoint smart focus sensor such as an oblique incidence type of exposure apparatus can be easily compared.
  • the correct focus position of the substrate is compensated even in different environments where the projection optical system is placed.
  • the present invention is extremely useful for a projection exposure apparatus and a projection exposure apparatus using a projection optical system having a large numerical aperture.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

L'invention concerne un procédé d'exposition dans lequel un modèle de mesure de mise au point est successivement projeté, sur une plaquette (W), sur des points de mesure de mise au point, pendant le changement de position de la plaquette (W) le long d'un axe optique (AX). Ainsi, en fonction des résultats d'exposition de projection du modèle, on détermine la positon du meilleur plan de formation d'image d'un système optique de projection (PL) au niveau de chaque point de mesure. En utilisant les positions des meilleurs plans de formation d'image, on étalonne le niveau de mise au point cible d'un capteur autofocus multipoint. Même si l'environnement du système optique de projection change, chaque capteur autofocus multipoint peut conserver une grande précision de détection. Ce procédé d'exposition est notamment efficace dans des régleurs comprenant un système optique de projection doté d'une grande ouverture numérique.
PCT/JP1998/003259 1997-07-22 1998-07-22 Procede de mise au point, procede d'exposition et regleur Ceased WO1999005707A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU83556/98A AU8355698A (en) 1997-07-22 1998-07-22 Focusing method, exposure method, and aligner

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP21138297 1997-07-22
JP9/211382 1997-07-22

Publications (1)

Publication Number Publication Date
WO1999005707A1 true WO1999005707A1 (fr) 1999-02-04

Family

ID=16605046

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP1998/003259 Ceased WO1999005707A1 (fr) 1997-07-22 1998-07-22 Procede de mise au point, procede d'exposition et regleur

Country Status (2)

Country Link
AU (1) AU8355698A (fr)
WO (1) WO1999005707A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030047690A (ko) * 2001-12-03 2003-06-18 미쓰비시덴키 가부시키가이샤 반도체 장치 및 그 제조 방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07130635A (ja) * 1993-11-08 1995-05-19 Nikon Corp 基板の高さ位置検出装置
JPH0917717A (ja) * 1995-07-03 1997-01-17 Nikon Corp 露光装置
JPH0945609A (ja) * 1995-07-26 1997-02-14 Canon Inc ベストフォーカス決定方法及びそれを用いた露光条件決定方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07130635A (ja) * 1993-11-08 1995-05-19 Nikon Corp 基板の高さ位置検出装置
JPH0917717A (ja) * 1995-07-03 1997-01-17 Nikon Corp 露光装置
JPH0945609A (ja) * 1995-07-26 1997-02-14 Canon Inc ベストフォーカス決定方法及びそれを用いた露光条件決定方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030047690A (ko) * 2001-12-03 2003-06-18 미쓰비시덴키 가부시키가이샤 반도체 장치 및 그 제조 방법

Also Published As

Publication number Publication date
AU8355698A (en) 1999-02-16

Similar Documents

Publication Publication Date Title
KR100365602B1 (ko) 노광방법및장치와반도체디바이스제조방법
US5661548A (en) Projection exposure method and apparatus including a changing system for changing the reference image-formation position used to generate a focus signal
KR100471524B1 (ko) 노광방법
JP3265504B2 (ja) 露光方法及び装置、並びに半導体素子の製造方法
KR100266729B1 (ko) 면위치검출방법 및 동방법을 사용하는 스캔노광방법
JP3308063B2 (ja) 投影露光方法及び装置
TWI534558B (zh) 偵測裝置、曝光設備及使用其之裝置製造方法
JP2004014876A (ja) 調整方法、空間像計測方法及び像面計測方法、並びに露光装置
US20070229791A1 (en) Step Measuring Device and Apparatus, and Exposure Method and Apparatus
JP2001160535A (ja) 露光装置、及び該装置を用いるデバイス製造方法
JP3335126B2 (ja) 面位置検出装置及びそれを用いた走査型投影露光装置
JP2002231616A (ja) 位置計測装置及び方法、露光装置及び方法、並びにデバイス製造方法
JPH1097083A (ja) 投影露光方法及び投影露光装置
TWI358529B (en) Shape measuring apparatus, shape measuring method,
US6539326B1 (en) Position detecting system for projection exposure apparatus
JP3531227B2 (ja) 露光方法および露光装置
CN114647155B (zh) 测量装置、曝光装置和物品制造方法
JPH09246356A (ja) 表面位置設定方法
JPH10209030A (ja) 投影露光方法及び投影露光装置
JP2006030021A (ja) 位置検出装置及び位置検出方法
WO1999005707A1 (fr) Procede de mise au point, procede d'exposition et regleur
US8237917B2 (en) Exposure apparatus and device manufacturing method
JP3617710B2 (ja) 投影露光装置
JP2000021711A (ja) 露光装置及びその焦点検出方法
JPH07142346A (ja) 投影露光装置

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): AL AU BA BB BG BR CA CN CU CZ EE GE HR HU ID IL IS JP KR LC LK LR LT LV MG MK MN MX NO NZ PL RO SG SI SK SL TR TT UA US UZ VN YU

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): GH GM KE LS MW SD SZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE BF BJ CF CG CI CM GA GN GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
122 Ep: pct application non-entry in european phase
NENP Non-entry into the national phase

Ref country code: CA