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WO1999001592A1 - Procede pour le depot electrochimique et/ou l'attaque chimique et cellule electrochimique de ce type - Google Patents

Procede pour le depot electrochimique et/ou l'attaque chimique et cellule electrochimique de ce type Download PDF

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Publication number
WO1999001592A1
WO1999001592A1 PCT/BE1998/000102 BE9800102W WO9901592A1 WO 1999001592 A1 WO1999001592 A1 WO 1999001592A1 BE 9800102 W BE9800102 W BE 9800102W WO 9901592 A1 WO9901592 A1 WO 9901592A1
Authority
WO
WIPO (PCT)
Prior art keywords
cathode
electrolyte
anode
flow rate
electrically conductive
Prior art date
Application number
PCT/BE1998/000102
Other languages
English (en)
Dutch (nl)
Inventor
Bert Raf Celis
Jean-Pierre Paul Julien Clement Frans Celis
Jan Leo Dominique Fransaer
Original Assignee
K.U. Leuven Research & Development
Interuniversïtair Micro-Elektronika Centrum
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by K.U. Leuven Research & Development, Interuniversïtair Micro-Elektronika Centrum filed Critical K.U. Leuven Research & Development
Priority to AU82016/98A priority Critical patent/AU8201698A/en
Publication of WO1999001592A1 publication Critical patent/WO1999001592A1/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/08—Electroplating with moving electrolyte e.g. jet electroplating
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/007—Current directing devices
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/10—Electrodes, e.g. composition, counter electrode
    • C25D17/12—Shape or form
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00—Processes for servicing or operating cells for electrolytic coating
    • C25D21/16—Regeneration of process solutions
    • C25D21/18—Regeneration of process solutions of electrolytes
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/18—Electroplating using modulated, pulsed or reversing current
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/02—Etching

Definitions

  • the invention relates in general terms to a method for electrochemical deposition and/or etching and to an electrochemical cell of this nature, for the purpose of depositing or etching metal, metal alloys, composition- modulated layers or composites on or off a workpiece which is at least partially electrically conductive, in accordance with the preamble of Claim 1.
  • the method and the cell device according to the invention can preferably be used for the production of:
  • microelectronic components such as electrical conductors, resistors, inductive elements, capacitive elements, magnetic elements and switching elements, for example as part of integrated circuits on silicon wafers;
  • optical and opto-electronic components for example screen components, photocells, photoelectric generators ;
  • - plane-parallel metal multilayers with special magnetic, optical, electrical, mechanical properties such as for example Co/Cu, Co/Ni/Cu multilayers
  • - dispersion composite layers for example nickel - silicon carbide layers, nickel-phosphorus- fluoropolymer layers, the carbide particles and polymer particles, respectively, being incorporated in a layer of metal or metal alloy.
  • US-A-5, 516,412 improves the uniformity at the level of the workpiece and partially reduces the risk of contamination and H 2 pits by positioning the cathode and anode vertically. Since the electrolyte is moved, the uniformity of electrodeposition remains a problem with regard to the cavities.
  • the invention described here aims, inter alia, to improve the uniformity at the level of the workpiece and the cavities and to avoid the risk of contamination and H 2 pits. A similar approach applies for the relative etching of material.
  • the electrolyte moves with respect to the cathode (anode) in order to counteract depletion (enrichment) of the electrolyte in the vicinity of the cathode (anode) , with the result that the deposition rate (etching rate) and the homogeneity of the electrolyte are increased. If the flow of liquid or the liquid flow rate is uniform or randomly turbulent, this provides better uniformity in deposition on or etching from relatively extensive flat layers.
  • an intermittent variation in flow rate is imposed on the electrolyte in accordance with a cycle composed of two phases: a first phase where the flow rate is essentially other than zero and a second, subsequent phase where the flow rate is essentially equal to zero.
  • the electrodeposition (the etching) is preferably carried out by means of a cell which comprises plane- parallel electrodes which are disposed close together and are submerged in an electrolyte.
  • the electrolyte is introduced through one or more openings in the anode or the cathode or between the anode and the cathode or, if appropriate, through an opening at the side between anode and cathode.
  • a valve mechanism and/or a pump is designed in such a manner that the flow rate of the electrolyte between the electrodes can be fully controlled. This mechanism, combined with suitable positioning of anode and cathode, ensure that the flow of liquid between the electrodes can be forcibly accelerated or decelerated and even brought to a standstill.
  • the liquid (containing the electrolyte) between the electrodes is partially or completely replaced, and in the second position, when the liquid is virtually, and preferably completely, at a standstill, the electrodeposition (the etching) takes place.
  • the flow rate is intermittently controlled in such a manner that a sufficiently high liquid flow rate is achieved, so that small gas bubbles and any debris are discharged during each cycle, in particular during the first phase of each cycle, in which the flow rate is essentially other than zero. After this, the flow rate gradually decreases, with the result that the flow of liquid is decelerated.
  • a sinu- soidal flow rate which is easy to realize, preferably meets these characteristics.
  • Controlling the flow of liquid is necessary in order to achieve a high cycle frequency and essentially ensures complete replacement with electrolyte, which if appropriate has been filtered and revitalized, in the space between the electrodes. For this reason, the cell and the method according to the invention are suitable -for operating at high current density and therefore high deposition rate (or etching rate) . Discharging hydrogen bubbles prevents the formation of H 2 pits. The high liquid flow and frequency prevents contamination debris produced at the anode from being able to settle on the cathode.
  • the cell according to the invention may be equipped with an anode which is in conformity with the cathode, an auxiliary cathode and/or a dielectric shield at the edge, thus preventing non-uniform deposition caused by the edge effect.
  • the electrodes • can be arranged very close to one another, the volume of electrolyte which has to be completely replaced each cycle, if desired, is low.
  • the method and the device according to the invention ensure that :
  • - multilayers and/or composite layers can be manufactured using one or more electrolytes.
  • the device and the method according to the invention are referred to below in general terms as "agitation synchronized electrodeposition" (ASE) .
  • Figure 1 diagrammatically depicts . an ASE system with a cell
  • Figure 2 shows -a diagrammatic overview of a control system for ASE
  • Figure 3 shows flow rate and electric current diagrams as a function of the cycle time
  • Figure 5 shows a section through the cell illustrated in Figure 4
  • Figure 6 shows a variant cell design for ASE, in section
  • Figure 7 shows a section in the plane of the cathode of the cell in Figure 6,
  • Figure 1 diagrammatically depicts an embodiment of a cell 10 which can be used to carry out an "agitation synchronized electrodeposition” (ASE) method according to the invention with high frequency.
  • ASE agitation synchronized electrodeposition
  • Conductors 18 are inert, electrically insulated and sealed off at the necessary locations with respect to an electrolyte 7, and are produced in accordance with the known rules of the prior art .
  • the electrodes 5, 6 rest in a receptacle 3 and are submerged in the electrolyte 7.
  • the receptacle 3 is surrounded by a casing 15 which contributes to thermo- static insulation for the electrolyte 7.
  • a casing 15 is insulated and provided with a double wall, through which a thermostating liquid 14 - can flow.
  • a circuit for the thermostating liquid 14 passes via a thermostating element 11.
  • the electrolyte 7 is pumped between cathode 6 and anode 5 via pump 1, through narrow openings 2 which are situated in the anode or the cathode.
  • the size of these openings is preferably less than 1/5 of the cathode/anode distance and the openings are sufficiently far removed from one another to keep the electric current distribution as uniform as possible.
  • Feed line 8 is made from material which is sufficiently strong not to be deformed by the pressure and vacuum brought about during pumping.
  • One-way valves 9 are provided, irrespective of the action of the pump or in the feed line. As a result, the pump flow rate controls the flow between the electrodes while the electrolyte is being changed.
  • the inlet to the discharge line 19 is disposed in such a manner that the discharge flow does not cause any turbulence during electrodeposition between the electrodes.
  • This inlet is at a deep position, preferably the deepest position, in the receptacle, in order to extract any debris which has settled and to filter it out of the electrolyte.
  • Liquid-level detector 13 in receptacle 3 checks that cathode and anode are always submerged in the electrolyte.
  • the electrolyte may be discharged continuously or discontinuously, in phase or counterphase with the feed.
  • the suction stroke the electrolyte between the electrodes is virtually at a standstill and the receptacle is partially emptied.
  • a stepper motor or motor 26 By driving the pump at a varying angular velocity using a stepper motor or motor 26, it is possible to control the instantaneous flow rate, the period time and the relationship between phase time 1 and 2 and the cycle frequency, as shown, for example, in Figures 3a, 3b, 3c.
  • Figure 2 diagrammatically depicts the synchronization.
  • Figure 2 shows: the detector 21, the pump 1, the pulse delay 23, the function generator 24, the galvanostat or potentiostat 25, the cell 26, the feed line 8, the discharge line 12, the electrical connections 18 between the electrodes and galvanostat or potentiostat.
  • the function generator allows the current or voltage to be modulated during phase 2, for example as shown in Figures 3d, 3e, 3f .
  • the electrodeposition can be synchronized with the aid of a liquid flow detector, which detects the liquid flow (standstill) in the feed line just upstream of the anode.
  • a liquid flow detector which detects the liquid flow (standstill) in the feed line just upstream of the anode.
  • flow detectors based on various detection principles, such as LASER-Doppler, pressure difference detector and others, are suitable for this purpose.
  • a function generator coupled to drive electronics for the pump motor and the electric current source for the electrodeposition, can synchronize the system in the correct sequence.
  • the cell 10 may be provided with an auxiliary cathode 16 with suitable current balancing with respect to the cathode or an electrically non-conductive current reflector 17 in order to keep the electrodeposition uniform at the edge of the cathode.
  • control unit 28 can be controlled by means of control unit 28.
  • the distance (H) shown in Figure 1 between cathode and anode is preferably less than 10 mm, and more preferably between 0.5 and 3 mm. This prevents convection during phase 2 and provides a quick flow-through during phase 1 of the cycle.
  • the frequency of refreshing and electrodeposition is preferably higher than 0.1 cycles/second for the following reasons:
  • the uniformity of deposition is illustrated on the basis of the layout shown in Figure 1, in which the distance (H) between _ cathode and anode is 2 mm, the pumping sequence is completely sinusoidal, as in Figure 3 , and the volume pumped between the electrodes during phase 1 is 50 ml, the total cycle lasts 1700 msec and the deposition time lasts 833 msec during phase 2.
  • What is being produced are cores for a microinductor having a thickness of 6 ⁇ m and a composition of Ni (81% by weight) and Fe (19% by weight) distributed over a 4-inch Si wafer provided with a Cu seed layer and the necessary photoresist masks.
  • Deposition is carried out galvanostatically with a current density of 100 mA/cm 2 at 60°C.
  • the bath composition is as follows: FeCl*4H 2 0 3 g/1, NaCl 30 g/1, saccharine 3 g/1, NiCl 2 »6H 2 0 50 g/1, B(OH) 3 30 g/1, at pH 2.5. It is established in this method that the thickness deviation is less than 4% over identical masks, irrespective of where the mask is situated on the wafer and taking into account deviations in the primary current distribution.
  • the example is not limited to the electrochemical deposition of this composition and the use of this specific electrolyte.
  • the uniformity can also be obtained with other electrolytes, electrolytes mixed with dispersions of charged particles and others.
  • a variant of the ASE system according to the invention is the cell 50 shown in Figure 4.
  • This cell can be used for a plurality of wafers or workpieces or a large workpiece where centrally no deposition is required, for example a magneto-optical disc, if the necessary recess is arranged in the cathode holder for this purpose.
  • the cell is shown in Figures 4 and 5 in a very simple form, for example for 3 wafers.
  • Figure 4 shows a plan view of the system and Figure 5 shows a cross-section on line AB in Figure 4.
  • the wafers or workpieces 56 lie in one plane, disposed concentrically around the feed opening 58 for the electrolyte, and essentially plane-parallel to the anode 55.
  • the surface of the holder for the anode 51 and the anode lie in the same plane.
  • the electric contact (s) and attachment elements 52 for the cathode 56 if these are present on this surface, the surface of the cathode, of the auxiliary cathode 59 and of the cathode holder 57 lie- in the same plane.
  • the holders for the electrodes 54 are provided with the necessary connections and contacts 49 for conducting the electric current from the galvanostat or potentiostat to the electrodes. These are inert, electrical and sealed at those locations with respect to the electrolyte and are made in accordance with the rules of the prior art .
  • the electrodes rest in a receptacle 63 and are submerged in the electrolyte 67, the level being monitored by a detector 53.
  • a spacer tube 64 ensures that the electrodes are positioned in a plane-parallel manner.
  • the inlet to the discharge line 69 lies at the deepest point of the receptacle in order to discharge any settled debris and to subject the electrolyte to aftertreatment , in particular to filter it.
  • An isostatic chamber 68 which ensures that the radial flow is identical in all directions, may be arranged around the inlet 58.
  • This chamber is a cylindrical ring comprising random capillary openings and passages made of inert material and is made, for example of cemented teflon, polyethylene, polymethylmethacrylate and glass beads with a diameter of less than 1 mm.
  • This cell 50 is connected to a drive system 20, as shown in Figure lb and Figure 2.
  • a variant cell design for ASE according to the invention is shown in Figure 6, Figure 7 and Figure 8.
  • Figure 7 shows a section in the plane of the cathode surface.
  • Figure 6 is a cross-section through the cell on line AB in Figure 7.
  • Figure 8 is a cross-section on line CD in Figure 7.
  • the electrolyte is introduced between cathode and anode from the side.
  • the anode and the introduction device may be rotated, between each cycle or a plurality of cycles or during phase 1, as desired through 180° or less, continuously or discontinuously, with respect to the cathode.
  • the anode and the introduction device may be rotated, between each cycle or a plurality of cycles or during phase 1, as desired through 180° or less, continuously or discontinuously, with respect to the cathode.
  • This cell 70 may be disposed both horizontally and vertically, and in all intermediate positions, with the cathode 76 always below the anode 75 except when in the vertical position. In this example, the cell is disposed at 20° with respect to the horizontal.
  • the anode holder 71 and the electrolyte injection head 89 and the isostatic chamber 88 are fixed to one another and can be rotated through at least 180° about the axis 98 for the purpose of changing the direction of flow of the electrolyte.
  • the electromechanical rotation and lifting mechanism 99 may be designed in various ways by the person skilled in the art .
  • the holder for the wafer and auxiliary cathode 72 is fixed to the bottom of the receptacle 74, which in this example is also tilted by 20°.
  • the electric current conductors for the cathodes 97 pass, sealed and isolated, via the cathode holder, through following the bottom of the receptacle towards the galvanostat or potentiostat.
  • the bridging ring fits just over the edge of the wafer and forms a bridge between the cathode contact ring 104 and the wafer 76.
  • the ring presses onto the wafer and the cathode contact ring, with the result that the wafer is connected, via the electrical conductor 97, to the galvano-potentiostat .
  • the wafer comes to lie completely free, so that it becomes possible to load, process and unload the wafers completely automatically.
  • the surface of the cathode 77 and of the cathode holder 78 preferably lies plane-parallel to the surface of the anode 79.
  • the electrolyte is injected between anode and cathode at height H, which is preferably less than 10 mm.
  • the inlet 88 comprises an isostatic chamber with a spray head comprising capillary passages 89 which ensure that the flow is uniformly distributed over the cathode surface.
  • the flow of liquid leaves the space between the electrodes at outlet 80.
  • Anode holder 71 and cathode holder 92 are made to match and cylindrically recessed 92, so that anode holder can rotate freely with respect to the cathode holder and can move in the direction of the axis 98, with the result that H can be reduced to virtually 0, can reciprocate cyclically or can be set at a height H.
  • the holder of the anode 71 is provided with a sealing ring 81 and a lead-through for the electrically conductive clamping bolt 83 which is attached to the anode and serves to clamp the anode tightly to the sealing ring 81, via the screw 84.
  • the electric conductor 101 which passes from the hollow cylinder of the anode holder 85 to the galvanostat or potentiostat, is formed on this bolt.
  • the revitalized, filtered and thermostated electrolyte is fed, via line and duct 93, to the isostatic chamber 88 and the injection piece 89.
  • the electrolyte is discharged at the deepest point of the receptacle 93, in order to pump out any debris which has settled and to filter it out of the electrolyte.
  • the receptacle 73 has a double jacket for a thermostating circuit 100.
  • Level detector 96 ensures that the electrodes are submerged in the electrolyte 94 and are coupled to the control system 28.
  • it is sucked onto the plate of the cathode holder 106 by means of vacuum.
  • fine passages are connected, via vacuum line 105, to an automatically controlled vacuum pump.
  • Sealing ring 107 ensures that -the vacuum is maintained and prevents electrolyte from seeping in on the rear side of the wafer.
  • This cell 70 is connected to a system 20 as shown in Figure lb and Figure 2 for ASE.
  • the uniformity of electrochemical etching is applied using the layout as illus- trated in Figure 1, under conditions which are comparable to those indicated for the example relating to Figure 1.
  • the material to be etched off is of the high-alloy type, such as stainless steel, 316L, Haynes 188 and Elgiloy being materials which are chemically difficult to etch in environmentally-friendly electrolytes (for example, avoidance of NOx emission) .
  • Applying an anodic potential to the said material, submerged in a less aggressive electrolyte, does in face allow the anodic dissolution of the said material to be achieved in a controlled manner.
  • the method is carried out in a 1 to 6 M NaN0 3 electrolyte to which, if appropriate, 10% of glycerine has been added, at 1 V and for a total treatment duration of 1 mm.
  • the high-alloy substrate material is covered with a chemically inert photosensitive resist layer in which a pattern of holes has been made by lithographic methods. It is established here that at those holes where the substrate material is in contact with the electrolyte those parts which have been etched away present a substantial reduction in the undercutting and that the walls along the parts which have been etched away are straighter and flatter by comparison with electrolytic etching tests carried out without using the cell shown in Figure 1.
  • the example is not limited to the electrochemical etching of these materials and the use of these specific electrolytes.
  • the current-bearing lines to the cathode (s) and the anode are electrically and chemically inert with respect to the electrolyte and are in electrical contact with the respective electrodes,
  • the holder of the workpiece is designed in such a manner that the workpiece is easy to put in place and only that part of the cathode which faces the anode is in electrical contact with the electrolyte,
  • thermostating, revitalizing and filtering unit can be accommodated in the feed and discharge circuit, optionally with automatic control, in such a manner that contamination- free and revitalized electrolyte at the correct temperature is pumped between the electrodes, - all the materials used in the cell, feed and discharge lines and pump which come into contact with the electrolyte are chemically inert with respect to the electrolyte, with the exception of the electrodes.
  • these cells may be disposed next to one another in a battery, whether or not in the same one, and replacement of the workpieces may be automated using standard principles.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroplating Methods And Accessories (AREA)

Abstract

L'invention concerne un procédé pour le dépôt électrochimique ou l'attaque chimique des métaux, des alliages, des couches à composition modulée ou des composites. Selon ce procédé, une pièce au moins partiellement électriquement conductrice est connectée de manière à assurer une conduction à une source de tension ou de courant, avant d'être positionnée en étant sensiblement parallèle à une contre-électrode, dont elle est séparée par un électrolyte. Ce procédé se caractérise en ce qu'un courant électrique est appliqué entre une cathode et une anode lorsque le débit d'électrolyte entre l'anode et la cathode est sensiblement égal à zéro.
PCT/BE1998/000102 1997-07-03 1998-07-03 Procede pour le depot electrochimique et/ou l'attaque chimique et cellule electrochimique de ce type WO1999001592A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU82016/98A AU8201698A (en) 1997-07-03 1998-07-03 Method for electrochemical deposition and/or etching and an electrochemical cel lof this nature

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL1006463 1997-07-03
NL1006463A NL1006463C2 (nl) 1997-07-03 1997-07-03 Werkwijze voor elektrochemische depositie en/of wegetsing en een dergelijke elektrochemische cel.

Publications (1)

Publication Number Publication Date
WO1999001592A1 true WO1999001592A1 (fr) 1999-01-14

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ID=19765267

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/BE1998/000102 WO1999001592A1 (fr) 1997-07-03 1998-07-03 Procede pour le depot electrochimique et/ou l'attaque chimique et cellule electrochimique de ce type

Country Status (3)

Country Link
AU (1) AU8201698A (fr)
NL (1) NL1006463C2 (fr)
WO (1) WO1999001592A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012080716A3 (fr) * 2010-12-15 2013-06-20 Picofluidics Limited Appareil de dépôt électrochimique
US9136794B2 (en) 2011-06-22 2015-09-15 Research Triangle Institute, International Bipolar microelectronic device
JP2019210540A (ja) * 2018-06-08 2019-12-12 深▲せん▼市創智成功科技有限公司 電気メッキ装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU489616A2 (ru) * 1973-07-12 1975-10-30 Московский Ордена Ленина Энергетический Институт Способ размерной электрохимической обработки
US5242556A (en) * 1990-05-09 1993-09-07 Yoshida Kogyo K.K. Electrolytic machining using pulsed electric current

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU489616A2 (ru) * 1973-07-12 1975-10-30 Московский Ордена Ленина Энергетический Институт Способ размерной электрохимической обработки
US5242556A (en) * 1990-05-09 1993-09-07 Yoshida Kogyo K.K. Electrolytic machining using pulsed electric current

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
DATABASE WPI Section Ch Week 7632, Derwent World Patents Index; Class M11, AN 76-61209X, XP002058762 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012080716A3 (fr) * 2010-12-15 2013-06-20 Picofluidics Limited Appareil de dépôt électrochimique
US9945043B2 (en) 2010-12-15 2018-04-17 Spts Technologies Limited Electro chemical deposition apparatus
US9136794B2 (en) 2011-06-22 2015-09-15 Research Triangle Institute, International Bipolar microelectronic device
JP2019210540A (ja) * 2018-06-08 2019-12-12 深▲せん▼市創智成功科技有限公司 電気メッキ装置

Also Published As

Publication number Publication date
AU8201698A (en) 1999-01-25
NL1006463C2 (nl) 1999-01-05

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