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WO1999063553A1 - Compositions de resistance a couche epaisse pour formation de bandes thermoconductrices et utilisation desdites compositions - Google Patents

Compositions de resistance a couche epaisse pour formation de bandes thermoconductrices et utilisation desdites compositions Download PDF

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Publication number
WO1999063553A1
WO1999063553A1 PCT/US1999/003202 US9903202W WO9963553A1 WO 1999063553 A1 WO1999063553 A1 WO 1999063553A1 US 9903202 W US9903202 W US 9903202W WO 9963553 A1 WO9963553 A1 WO 9963553A1
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WO
WIPO (PCT)
Prior art keywords
thick
film
heat
resistor
film resistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US1999/003202
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English (en)
Inventor
Hisashi Matsuno
Yuichi Tachibana
Keiichiro Hayakawa
Mamoru Murakami
Sadanobu Kawasaki
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EIDP Inc
Original Assignee
EI Du Pont de Nemours and Co
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Filing date
Publication date
Application filed by EI Du Pont de Nemours and Co filed Critical EI Du Pont de Nemours and Co
Publication of WO1999063553A1 publication Critical patent/WO1999063553A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
    • H01C17/06506—Precursor compositions therefor, e.g. pastes, inks, glass frits
    • H01C17/06513—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component
    • H01C17/06533—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component composed of oxides
    • H01C17/0654—Oxides of the platinum group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/22—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
    • H05K1/167—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor incorporating printed resistors
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/20—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern
    • H05K3/207—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern using a prefabricated paste pattern, ink pattern or powder pattern

Definitions

  • the present invention relates to thick-film resistor compositions wherein a heat-transfer tape composition has been deposited on a base film, and a method for producing thick-film resistors using the heat-transfer tape.
  • This invention relates in particular to the production of thick-film resistors of diverse target resistance values and sizes, and to an effective technique for changing the resistance values of thick-film resistors .
  • a resistor film is formed on a dielectric substrate by combining an electrically conductive finely divided powder, in which the conductive ingredients include ruthenium oxide or ruthenium pyrochlore oxide, and glass powder together with an organic vehicle. It is applied by a screen printing process onto a dielectric substrate in a required shape and to a wet thickness of about 30 to 80 ⁇ m, then fired at a required temperature. Thick-film resistance electronic components and thick-film hybrid circuits and the like are formed in this way.
  • JP-A 8-222837 there has been proposed a process in which a transfer ink prepared by mixing a resin binder that thermally decomposes when fired at an elevated temperature with an electrically conductive metal powder that forms the wiring pattern on the base material to which transfer is carried out is coated with a coater or the like and dried so as to deposit a heat-transfer ribbon and, using this heat-transfer ribbon and a heat- transfer recording apparatus, a wiring pattern is formed on the base material of the circuit substrate without the need for a screen mask or writing.
  • this prior-art method discloses that the partial electrical resistance of the wiring pattern can be varied by using heat transfer to form a wiring pattern on the ceramic circuit substrate and by overprinting transfer ink, it does not imply or disclose the formation of thick-film resistors with a high degree of freedom, a high pattern precision, and a uniform-thickness layer.
  • One object of this invention is to provide, in a method for producing thick-film resistor components such as hybrid ICs and chip resistors, a technique which is capable of obtaining thick-film resistors of any resistance value and shape that have a high pattern precision and substantially no variance in the resistor thick film, and which, because it is able to modify and select the resistance value to be set in accordance with the resistor length, width and thickness, makes trimming unnecessary.
  • Another object of the invention is to provide a method for producing thick- film resistors by heat-transferring a thick-film resistor paste onto a dielectric substrate in accordance with a desired resistance value or shape, and with high pattern precision and essentially no film thickness deviation.
  • the thick-film resistor composition for heat-transfer tape formation according to the first invention disclosed herein is characterized by comprising from 54 to 76% by weight of a mixed inorganic powder containing ruthenium oxide and/or ruthenium pyrochlore oxide powder as the electrically conductive ingredient and a glass powder composed primarily of PbO, Si ⁇ 2 and AI 2 O3, from 14 to 23% by weight of a resin binder, and an organic vehicle containing from 10 to 23% by weight of an organic solvent.
  • the heat-transfer tape-forming thick-film resistor composition according to the second invention disclosed herein is characterized by, in the heat- transfer tape-forming thick-film resistor composition according to the above- described first invention, there having been added at least one TCR adjustor selected from the group consisting of MnO 2 , i ⁇ 2 , Nb 2 O5, Fe 3 O 4 , Sb 2 ⁇ 3 , CuO, Bi 2 O 3 , PbO, AgO, ZnO, SnO, V 2 O 5 , A1 2 0 3 , ZrO 2 , SiO 2 , Cr 2 O 3 and Ta 2 O 5 .
  • TCR adjustor selected from the group consisting of MnO 2 , i ⁇ 2 , Nb 2 O5, Fe 3 O 4 , Sb 2 ⁇ 3 , CuO, Bi 2 O 3 , PbO, AgO, ZnO, SnO, V 2 O 5 , A1 2 0 3 , ZrO 2 , SiO 2 , Cr 2
  • the thick-film resistor-forming heat-transfer tape according to the third invention disclosed herein is characterized by coating the thick-film resistor composition for heat-transfer tape formation according to the above-described first or second invention onto a polyethylene terephthalate base film having a thickness of 4 to 5 ⁇ m, then drying to remove the organic solvent present, such as to deposit and form on the base film a thick-film resistor film having a thickness in a range of about 3 to 12 ⁇ m.
  • the thick-film resistor-forming heat-transfer tape according to the fourth invention disclosed herein is characterized by heating a portion of a second polyethylene terephthalate base film which has been provided in close contact with the thick-film resistor-forming heat-transfer tape according to the above- described third invention on the side where the thick-film resistor layer has been formed, which portion corresponds to a predetermined thick-film resistor shape on the side opposite to the side of the thick-film resistor-forming heat-transfer tape where the thick-film resistor layer has been formed, and by such heating causing the portion of the thick-film resistor layer which has been deposited and formed on this heated base film portion to melt and heat-transfer, such as to form a divided thick-film resistor layer having the specific shape.
  • the thick-film resistor production method which uses a heat-transfer tape on which has been deposited a thick film resistor-forming composition according to the fifth invention disclosed herein is characterized by comprising the steps of: disposing the thick-film resistor-forming heat-transfer tape according to the above-described third invention on a dielectric substrate such that the thick-film resistor layer of the heat- transfer tape is in contact with the surface of the dielectric substrate; heating a portion of the base film which corresponds to a desired thick-film resistor shape, on the side of the base film in the heat-transfer tape opposite to the side on which the thick-film resistor layer has been formed, so as to melt a portion of the thick-film resistor layer and heat-transfer it onto the dielectric substrate; and firing the portion of the thick-film resistor film that has been separated from the heat-transfer tape and deposited onto the dielectric substrate.
  • the thick-film resistor production method which uses a heat-transfer tape on which has been deposited a thick-film resistor-forming composition according to the sixth invention disclosed herein is characterized by comprising the steps of: disposing the thick-film resistor-forming heat-transfer tape according to the above-described fourth invention on a dielectric substrate such that the partial thick-film resistor layer which was formed on the base film of the heat-transfer tape and was separated in a specific shape is in contact with the surface of the dielectric substrate heating a portion of the heat-transfer tape base film which corresponds to the thick-film resistance layer portion having a specific shape, on the side of the heat-transfer tape base film opposite to that where the separated partial thick-film resistor layer has been formed so as to melt the separated partial thick- film resistor layer and heat-transfer it onto the dielectric substrate; and firing the partial thick-film resistor layer that has been separated from the heat-transfer tape and deposited onto the dielectric substrate.
  • the thick-film resistor production method according to the seventh invention disclosed herein comprises using a thick-film resistor-forming heat- transfer tape obtained by coating the thick-film resistor composition for heat- transfer tape formation according to the above-described first or second invention onto a polyethylene terephthalate base film having a thickness of up to 5 ⁇ m, then drying to remove the organic solvent present, such as to deposit and form on the base film a thick-film resistor film having a thickness in a range of about 3 to 12 ⁇ m; and repeating a first resistor fabrication step in which a thick-film resistor is formed by transferring a selected first shape onto a dielectric substrate then firing, and a second resistor fabrication step in which a thick-film resistor is formed by separately selecting and transferring from the thick- film resistor layer a second shape which differs from the first shape in accordance with the resistance value obtained for the formed resistor, then firing, so as to selectively vary the shape of the thick-film resistor layer transferred from the thick-film resistor layer and thereby
  • the main technical concept of this invention is thus to use a heat-transfer technique to bond and form on a dielectric substrate a resistor paste film having a high pattern precision and essentially no resistor film thickness deviation.
  • a heat-transfer technique to bond and form on a dielectric substrate a resistor paste film having a high pattern precision and essentially no resistor film thickness deviation.
  • the resistance value in thick-film resistors generally fluctuates on account of such factors as temperature changes and air flow during firing.
  • the present invention may also be employed to vary the shape of those thick-film resistors that are heat- transferred and thereby rework resistors in which a target resistance value must be obtained.
  • the resistance value of a resistor may be determined from the following equation.
  • R is the resistance value ( ⁇ )
  • p is the resistivity of the inorganic solids, which is constant here
  • L is the length of the resistor (mm)
  • W is the resistor width (mm)
  • T is the resistor thickness ( ⁇ m).
  • the thick-film resistor compositions used in the present invention which are heat-transferable and can be applied onto a dielectric substrate, contain inorganic powder serving as the main component thereof electrically conductive ingredients, glass binders and TCR adjustors.
  • the above-mentioned thick- film resistor composition is prepared as an ink, which is then printed and transferred onto a heat-transfer tape base film by a commonly known gravure printing process.
  • the constituent components of this ink are thus the electrically conductive ingredients and glass binders serving as the main ingredients of the above-described thick-film resistor composition.
  • TCR adjustors which are inorganic additives used for reducing the temperature coefficient of resistance (TCR); resin binders which hold the above-mentioned inorganic powder ingredients until the ink film formed after printing and transfer of the ink onto the base film of the heat-transfer tape dries and cures, and which melt upon being heated by a heating element, the heating region of which is controlled and brought into contact with the heat-transfer tape, when the thick- film resistor paste film is heat-transferred onto a dielectric substrate, thereby allowing a film of the resistor paste composed of the above-mentioned inorganic powder to adhere to the dielectric substrate; and an organic solvent for dispersing these ingredients and rendering them into the form of an ink.
  • TCR temperature coefficient of resistance
  • the inorganic powder in the thick-film resistor composition used in this invention is a mixture of electrically conductive ingredients, glass binders and TCR adjustors.
  • Examples include ruthenium oxides and ruthenium pyrochlore oxides.
  • the preferred ruthenium pyrochlore oxide is lead ruthenate (Pb 2 Ru 2 O6) because it may easily be obtained in pure form, is not adversely affected by glass binders, has a relatively low TCR, is stable even when heated in air up to about 1,000°C, and is relatively stable even in a reducing atmosphere.
  • Use may also be made of other pyrochlore oxides, such as bismuth ruthenate (Bi 2 Ru 2 O 7 ) and bismuth lead ruthenate (Pb[ 5 Bio. 5 Ru 2 O 6 5 ).
  • the amount of ruthenium oxides or ruthenium pyrochlore oxides is from 10 to 50% by weight, and preferably from 12 to 40% by weight, based on the combined inorganic powder content.
  • Combined inorganic powder content refers to the combined amount of the electrically conductive ingredients and glass binder, and, when inorganic additives are also added as TCR adjustors, includes these as well.
  • the specific surface area of the electrically conductive ingredients although this is preferably from 5 to 25 m 2 /g for ruthenium oxides, and from 3 to 15 m 2 /g for ruthenium pyrochlore oxides.
  • precious metals such as gold, silver, platinum or palladium may be combined with ruthenium oxides or ruthenium pyrochlore oxides as electrically conductive ingredients, and blended into the composition.
  • ruthenium oxides or ruthenium pyrochlore oxides as electrically conductive ingredients, and blended into the composition.
  • Various glasses generally used in thick-film resistor compositions may be employed as the glass inorganic binders.
  • glasses may be made of a mixture obtained by mixing a first glass powder containing 30 to 60% by weight of SiO 2 , 5 to 30% by weight of CaO, 1 to 40% by weight of B 2 O 3 , 0 to 50% by weight of PbO, and 0 to 20% by weight of Al 2 O 3 , in which the combined amount of SiO 2 , CaO, B 2 O 3 , PbO and Al 2 O 3 accounts for at least 95% by weight; and a second glass powder containing 50 to 80% by weight of PbO, 10 to 35% by weight of SiO 2 , 1 to 10% by weight of Al 2 O 3 , 1 to 10% by weight of B 2 O 3 , 1 to 10% by weight of CuO, and 1 to 10% by weight of ZnO, in which the combined amount of PbO, SiO 2 , A1 2 0 3 , B 2 O 3 , CuO and ZnO accounts for at least 95% by weight.
  • the glass used as the glass binder in the present invention may be produced by a conventional production method.
  • the amount of glass binder is 5 to 45% by weight of the first glass and 5 to 45% by weight of the second glass, based on the combined weight of the inorganic powder ingredients.
  • the content of the first glass powder is greater than the above range, the resistance value becomes high, and when it is below this range, the firing temperature dependence during firing becomes poor.
  • the content of the second glass powder exceeds the above range, the size effect becomes large, and when it falls below this range, the resistance value becomes high.
  • the inorganic powders may also include, as the TCR adjustors which can used in this invention, one or more metal oxides selected from among, for example, MnO 2 , TiO 2 , Nb 2 O 5 , Fe 3 O 4 , Sb 2 O 3 , CuO, Bi 2 O 3 , PbO, AgO, ZnO, SnO, V 2 O 5 , Al 2 O 3 , ZrO 2 , SiO 2 , Cr 2 O 3 and Ta 2 O 5 .
  • the content of these is from 0 to 5% by weight, based on the combined inorganic powder content.
  • the resin binders which may be used in the thick-film resistor compositions of the invention employ a thermoplastic resin required for heat transfer. For reasons having to do with the melting point, viscosity, and the like, these binders are mixtures of synthetic resin and wax.
  • Synthetic resins that may be used include butylated urea, amino-type resins such as melamine resin, vinyl resin systems such as vinyl chloride resins, vinyl acetate resins, vinyl chloride- vinyl acetate copolymers and butyral resins, and cellulose resins such as methyl cellulose, ethyl cellulose, cellulose acetate and nitrocellulose resin.
  • Waxes that may be used include natural waxes and synthetic waxes.
  • Natural waxes that may be used are carnauba wax (melting point, 80-86°C), Japan wax, lanolin, montan wax (melting points, 70-90°C), paraffin waxes (melting points, 45-74°C), and microcrystalline waxes (melting points, 66-93 °C). Of these, carnauba wax is preferable.
  • synthetic waxes include Fischer-Tropsch wax (melting point, about 100°C), polyethylene wax (high melting point, 100-130°C) and polypropylene waxes (high melting point).
  • the resin binder content is from 14 to 23% by weight, based on the entire thick-film resistor composition, including the inorganic powder and the organic solvent.
  • the inorganic powders and resin binder of the thick-film resistor composition used in the present inventions are dispersed in an organic solvent to give an ink-like printable slurry.
  • the content of the organic solvent is 10 to 23% by weight, based on the overall weight of the composition containing the inorganic powders and resin binder.
  • the organic solvent must be capable of suitably wetting the finely divided inorganic powders, and must have a solubility that is capable of fully dissolving the resin binder and a good drying speed at low temperature of 60 to 80°C, for example.
  • organic solvents having these properties include toluene, ethanol and methyl ethyl ketone.
  • the content of the above-described mixture of electrically conductive ingredients, glass binders and TCR adjustors is preferably 54 to 76% by weight, based on the total weight of the composition containing the resin binder and the organic solvent.
  • the content of the mixture of inorganic powders is more than 76% by weight, the resulting slurry viscosity is not suitable for the step in which the thick- film resistor composition is coated onto the base film in the heat-transfer tape.
  • the content of the inorganic powder mixture is less than 54% by weight, the resistor film thickness after firing becomes too small in the step in which the resistor that has been heat-transferred and formed on a dielectric substrate is fired.
  • the content of the resin binder is preferably from 14 to 23% by weight, based on the total weight of the composition including the inorganic powders and the organic solvent.
  • the resin binder content in this composition is less than 14% by weight, the amount of wax ingredients present in the resin binder becomes low, resulting in inferior heat-transferability.
  • the resin binder content in this composition is more than 23 % by weight, the inorganic powder content becomes relatively low, resulting in a small resistor film thickness after firing in the step in which the resistor that has been heat-transferred and formed on the dielectric substrate is fired.
  • the content of the organic solvent within the inventive thick-film resistor composition preferably falls within a range of 10 to 23% by weight. Outside of this range, a suitable slurry viscosity cannot be obtained in the step in which the resistor composition is coated onto a base film in order to produce the heat- transfer tape.
  • the slurry-type thick-film resistor composition ink prepared as described above is printed using a known gravure printing process onto a base film made of a polyethylene terephthalate (PET) resin and having a width of 110 mm and a thickness of 4.5 ⁇ m, following which it is dried for about 5 to 10 minutes in a temperature range of 65 to 70°C so as to remove the organic solvent, thereby giving a heat-transfer tape having a thick-film resistor film with a thickness of about 4 ⁇ m.
  • the typical range of the thickness of the coated thick film resistor layer is about 3 to 12 ⁇ m with the desired resulting thickness of about up to 5 ⁇ m.
  • the thick-film resistor can generally be transferred directly onto a flat, flexible substrate.
  • the above-described heat-transfer tape and the dielectric substrate to which the resistor paste film is to be bonded are carried synchronously to the print starting position in a known thermal printer head in which heating resistor elements are disposed. Then, with the thermal head pushed against the heat-transfer tape, a predetermined heating resistor element is driven by control signals from an image processing computer connected to the thermal printer and generates heat, by means of which a selected portion of the heat- transfer tape melts and is transferred and attached, in a 0.8-mm square shape, to a dielectric substrate such as an alumina substrate at a facing position.
  • a thick-film resistor-forming heat-transfer tape is fabricated in which a selected portion of the above-described resistor film has been transferred, in accordance with a predetermined shape, from the above-described heat-transfer tape on which a resistor film having a thickness of about 4 ⁇ m has been formed, and deposited on another polyethylene terephthalate film having a thickness within a range of 25 to 75 ⁇ m.
  • the position corresponding to the selected film portion of the above-described thick-film resistor is heated, with a heat roller or the like, on the base film side opposite to the side on which the resistor film has been formed, thereby melting the thick-film resistor and heat-transferring it onto a substrate that has been provided in close contact with the heat-transfer tape.
  • firing is carried out with a 30-minute temperature profile that includes 5 minutes at the peak temperature of 850°C, thereby producing the resistor.
  • a conductor paste obtained by kneading into the form of a paste 65% by weight of silver and 5% by weight of palladium together with a solvent- containing vehicle and an inorganic binder was applied by screen-printing or the like so as to partially overlap the resistor layer that was printed on the substrate, dried (at 150°C for 10 minutes), then heated at 600°C for 30 minutes, thereby printing and forming a top electrode layer (Cl electrode). In this way, thick-film resistor elements can be obtained.
  • a conductive paste using a thermosetting resin or the like may be additionally applied so as to partially overlap the top electrode layer, and cured in a dryer at 150°C and 30 minutes, for example, to form an end electrode (C2 electrode).
  • an insulating resin or a low-melting glass powder paste may be applied or printed, then dried and fired so as to form a cover coat layer.
  • the mixture indicated below was kneaded for about one hour in a sand mill to prepare an ink-type thick-film resistor composition in which the inorganic powders were uniformly dispersed.
  • a heat-transfer tape was fabricated as described above, and thick-film resistors were formed in a size of 0.8-mm square by heat transfer onto an alumina substrate, then fired in air with a firing profile in which a temperature of 850°C was maintained for 5 minutes, thereby forming a thick-film resistor having a film thickness of 6 ⁇ m.
  • the resistance values were measured for 60 sample thick-film resistors having a shape of 0.8 x 0.8 mm formed in the above-described manner, based upon which the resistance value precision (standard deviation/average value x 100) was computed. In addition, the noise for these resistors was measured. Table 1 shows the average value determined based on these measured results.
  • WORKING EXAMPLE 2 Aside from changing to 12 ⁇ m the film thickness of the thick-film resistor formed by repeated transfer, thick-film resistors were produced using a mixture similar to that in Working Example 1 by essentially the same method. The resistance values were measured for 60 sample thick-film resistors thus formed, based upon which the resistance value precision (standard deviation/average value x 100) was computed. In addition, the noise for these resistors was measured. Table 1 shows the average value determined based on these measured results.
  • COMPARATIVE EXAMPLE A paste was prepared by kneading together, in a three-roll mill, 60% by weight of the same mixed inorganic powder as was used in Working Examples 1 and 2 above and 40% by weight of an organic vehicle composed of terpineol and ethylene cellulose.
  • resistors measuring 0.8-mm square were printed and formed on a dielectric substrate by a screen-printing process, then dried at 150°C for 10 minutes, and fired with a 30-minute firing profile at 850°C, thereby forming thick-film resistors.
  • the resistance values for 60 sample resistors obtained in this way were measured in the same way as in the working examples, based upon which the resistance value precision (standard deviation/average value x 100) was computed.
  • the average values for noise were measured and computed in the same manner as in the working examples.
  • Table 1 show that the present invention makes it possible to vary the resistance value in accordance with the selected film thickness, without film thickness deviation, over a broad range in film thickness from the film thickness required to avoid substrate-induced effects to the film thickness at which resistance value modification by laser trimming becomes difficult, and to obtain the desired resistance value by such adjustment in the film thickness.
  • the standard deviation/average value for the resistors produced in the working examples was 1.5 to 1.7%, and the 3 x standard deviation/average value was about 4.4 to 5.1%.
  • a high resistance value precision can be obtained, meaning that the variance in the resistance values for resistors produced according to this invention can be greatly reduced, making it unnecessary to adjust the resistance value by trimming and thus simplifying the production process.
  • good noise characteristics may be obtained.
  • the wax ingredients in the thick-film resistor compositions of the invention have a good ability to wet inorganic powders, they enhance the filling properties of the inorganic powders so that voids and the like are not present in the resistor after firing. This enables lower resistance values to be achieved.
  • the inventive heat transfer-based production method enables the resistor length, width and thickness to be freely modified in a short time. Hence, when if the resistance value changes under the influence of the firing conditions, the target resistance value can be easily obtained.

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  • Manufacturing & Machinery (AREA)
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  • Parts Printed On Printed Circuit Boards (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Non-Adjustable Resistors (AREA)

Abstract

Technique permettant d'obtenir des résistances à couche épaisse ayant n'importe quelle forme et valeur de résistance sans qu'il soit nécessaire de procéder à un ajustage afin de pouvoir sélectionner la valeur de résistance qui est déterminée par la longueur, la largeur et l'épaisseur de la résistance. Une résistance à couche épaisse est produite à l'aide d'une composition de résistance à couche épaisse pour la formation de bande thermoconductrice. Ladite composition comprend de 54 à 76 % en poids d'une poudre inorganique mélangée contenant de la poudre d'oxyde de ruthénium et/ou d'oxyde de ruthénium-pyrochlore en tant qu'ingrédient électriquement conducteur et une poudre de verre composée principalement de PbO, SiO2 et Al2O3, de 14 à 23 % en poids d'un liant sous forme de résine, et un véhicule organique contenant de 10 à 23 % en poids d'un solvant organique. Cette composition est appliquée sur un film de base en polyéthylène téréphthalate et séchée afin d'éliminer le solvant organique présent, ce qui permet d'obtenir une bande thermoconductrice de formation de résistance à couche épaisse dans laquelle une couche de résistance à couche épaisse d'une épaisseur prescrite a été déposée et formée. Une partie du film de base de la bande thermoconductrice résultante correspondant à une forme de résistance à couche épaisse choisie est chauffée, ce qui entraîne la fusion de la partie de la couche de résistance à couche épaisse située au-dessus, ainsi que son transfert et son dépôt sur un substrat diélectrique, ladite partie étant ensuite cuite, ce qui permet d'obtenir la résistance à couche épaisse.
PCT/US1999/003202 1998-05-29 1999-02-16 Compositions de resistance a couche epaisse pour formation de bandes thermoconductrices et utilisation desdites compositions Ceased WO1999063553A1 (fr)

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US8717698A 1998-05-29 1998-05-29
US09/087,176 1998-05-29

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WO1999063553A1 true WO1999063553A1 (fr) 1999-12-09

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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1156709A4 (fr) * 1999-09-07 2003-05-21 Asahi Glass Co Ltd Procede de formation d'empreinte d'impression transferable, et verre portant une empreinte imprimee
GB2383762A (en) * 2002-01-02 2003-07-09 Simpsons Manufacturing a thick film element by transfer lamination
EP1339258A4 (fr) * 2000-12-01 2005-07-20 Ibiden Co Ltd Chauffage ceramique, et pate de resistance de chauffage ceramique
WO2009129468A1 (fr) * 2008-04-18 2009-10-22 E. I. Du Pont De Nemours And Company Compositions de résistance utilisant une fritte de verre contenant du cu
WO2009129463A1 (fr) 2008-04-18 2009-10-22 E. I. Du Pont De Nemours And Company Compositions résistives sans plomb comportant de l’oxyde de ruthénium
CN101270223B (zh) * 2008-04-03 2011-05-04 常州兆隆合成材料有限公司 纳米SiO2/PET工程塑料制品的生产方法
CN110982303A (zh) * 2019-11-29 2020-04-10 黄山市晶特美新材料有限公司 一种利用V-Mn促进固相烧结制备铜铬黑色剂的方法及其用途
CN112010558A (zh) * 2020-09-03 2020-12-01 山东华菱电子股份有限公司 无铅硅酸盐玻璃釉原料组成物、无铅硅酸盐玻璃釉及其应用
CN114188067A (zh) * 2021-11-29 2022-03-15 西安欣贝电子科技有限公司 一种玻璃釉电位器用厚膜电阻浆料及其制备方法

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US5474711A (en) * 1993-05-07 1995-12-12 E. I. Du Pont De Nemours And Company Thick film resistor compositions
EP0836892A2 (fr) * 1996-10-21 1998-04-22 Dai Nippon Printing Co., Ltd. Feuille de transfert et procédé de formation de motifs

Cited By (14)

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Publication number Priority date Publication date Assignee Title
EP1156709A4 (fr) * 1999-09-07 2003-05-21 Asahi Glass Co Ltd Procede de formation d'empreinte d'impression transferable, et verre portant une empreinte imprimee
EP1339258A4 (fr) * 2000-12-01 2005-07-20 Ibiden Co Ltd Chauffage ceramique, et pate de resistance de chauffage ceramique
GB2383762A (en) * 2002-01-02 2003-07-09 Simpsons Manufacturing a thick film element by transfer lamination
CN101270223B (zh) * 2008-04-03 2011-05-04 常州兆隆合成材料有限公司 纳米SiO2/PET工程塑料制品的生产方法
WO2009129468A1 (fr) * 2008-04-18 2009-10-22 E. I. Du Pont De Nemours And Company Compositions de résistance utilisant une fritte de verre contenant du cu
CN102007080A (zh) * 2008-04-18 2011-04-06 E.I.内穆尔杜邦公司 使用含铜玻璃料的电阻器组合物
WO2009129463A1 (fr) 2008-04-18 2009-10-22 E. I. Du Pont De Nemours And Company Compositions résistives sans plomb comportant de l’oxyde de ruthénium
JP2011521869A (ja) * 2008-04-18 2011-07-28 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー Ｃｕ含有ガラスフリットを使用する抵抗体組成物
US8133413B2 (en) 2008-04-18 2012-03-13 E. I. Du Pont De Nemours And Company Resistor compositions using a Cu-containing glass frit
US8257619B2 (en) 2008-04-18 2012-09-04 E I Du Pont De Nemours And Company Lead-free resistive composition
CN102007080B (zh) * 2008-04-18 2014-05-07 E.I.内穆尔杜邦公司 使用含铜玻璃料的电阻器组合物
CN110982303A (zh) * 2019-11-29 2020-04-10 黄山市晶特美新材料有限公司 一种利用V-Mn促进固相烧结制备铜铬黑色剂的方法及其用途
CN112010558A (zh) * 2020-09-03 2020-12-01 山东华菱电子股份有限公司 无铅硅酸盐玻璃釉原料组成物、无铅硅酸盐玻璃釉及其应用
CN114188067A (zh) * 2021-11-29 2022-03-15 西安欣贝电子科技有限公司 一种玻璃釉电位器用厚膜电阻浆料及其制备方法

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